CN111415921A - Antenna packaging structure and manufacturing method thereof - Google Patents
Antenna packaging structure and manufacturing method thereof Download PDFInfo
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- CN111415921A CN111415921A CN202010235864.7A CN202010235864A CN111415921A CN 111415921 A CN111415921 A CN 111415921A CN 202010235864 A CN202010235864 A CN 202010235864A CN 111415921 A CN111415921 A CN 111415921A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 219
- 229910052751 metal Inorganic materials 0.000 claims abstract description 219
- 239000000758 substrate Substances 0.000 claims description 59
- 238000003466 welding Methods 0.000 claims description 16
- 229910000679 solder Inorganic materials 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 179
- 238000000034 method Methods 0.000 description 18
- 125000006850 spacer group Chemical group 0.000 description 9
- 239000011810 insulating material Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
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- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- 230000001678 irradiating effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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Abstract
The invention discloses an antenna packaging structure and a manufacturing method thereof.A dielectric layer, an antenna chip bonding pad, an external bonding pad and an interconnection metal layer are formed on a detachable bonding slide; then, manufacturing a first side wall and a first metal feed line column positioned in the first side wall on the dielectric layer, so as to form a first cavity between the first side walls; next, a first carrier plate with a first antenna metal layer is arranged above the first cavity, and the first antenna metal layer is electrically connected with the first metal feed line column; then, forming a second side wall and a second metal feeder pillar positioned in the second side wall above the first carrier plate, wherein the second metal feeder pillar is electrically connected with the first metal feeder pillar, and a second cavity is formed between the second side walls; next, a second carrier plate with a second antenna metal layer is disposed above the second cavity, and the second antenna metal layer is electrically connected to the second metal feeder pillar. The antenna based on the antenna packaging structure provided by the invention has the advantages of high efficiency, good performance and low loss.
Description
Technical Field
The invention relates to the technical field of semiconductor packaging, in particular to an antenna packaging structure and a manufacturing method thereof.
Background
With the continuous development of microelectronic technology, users have higher and higher requirements on miniaturization, multiple functions, low power consumption and high reliability of systems, and especially in recent years, blowout required by portable handheld terminal markets, such as portable computers, smart phones, tablet computers and the like, has higher integration level and interconnection capacity. Integrated antennas are also increasingly emerging.
The existing antenna integration mainly comprises the steps of manufacturing and mounting an antenna structure on a packaging substrate, particularly directly manufacturing an antenna on the surface of a circuit board, and the antenna packaging structure is low in efficiency, poor in performance and large in loss.
Aiming at the problems of low efficiency, poor performance, high loss and the like of the conventional antenna packaging structure, the invention provides an antenna packaging structure and a manufacturing method thereof.
Disclosure of Invention
In order to solve the problems of low efficiency, poor performance, large loss and the like of the conventional antenna packaging structure, according to an embodiment of the present invention, there is provided an antenna packaging structure, including:
a first dielectric layer;
the first metal layer is arranged above the first dielectric layer;
the second dielectric layer is arranged above the first dielectric layer and the first metal layer;
a second metal layer disposed over the second dielectric layer and electrically connected to the first metal layer by a conductive via that penetrates the second dielectric layer;
the first insulating side wall is arranged above part of the second dielectric layer;
the first metal feeder structure penetrates through the upper surface and the lower surface of the first insulating side wall and is electrically connected to the second metal layer;
the first antenna substrate is arranged above the first insulating side wall and forms a first cavity together with the first insulating side wall and the second dielectric layer;
the third metal layer is arranged above the first insulating side wall and is electrically connected to the first metal feeder line structure;
the second insulating side wall is arranged above the first insulating side wall and the third metal layer and partially covers the first antenna substrate;
the second metal feeder structure penetrates through the upper surface and the lower surface of the second insulating side wall and is electrically connected to the third metal layer;
the fourth metal layer is arranged above the second insulating side wall and is electrically connected to the second metal feeder line structure;
the second antenna substrate is arranged above the second insulating side wall and the fourth metal layer and forms a second cavity together with the second insulating side wall and the first antenna substrate;
a die bond structure extending through the first dielectric layer and electrically connected to the first metal layer;
the external solder ball penetrates through the first dielectric layer and is electrically connected to the first metal layer; and
an antenna chip electrically connected to the chip bonding structure.
In one embodiment of the invention, the first metal layer has a single-layer or multi-layer layout wiring layer, wherein the lowest layer has an external connection bonding pad and a chip bonding pad, the external connection welding ball is arranged on the external connection bonding pad, and the chip welding structure is arranged on the chip bonding pad.
In one embodiment of the invention, the first and or second metal feed line structures are metal feed line pillars.
In an embodiment of the invention, the first antenna substrate is embedded in the connecting position of the first insulating sidewall and the second insulating sidewall in a suspended manner to form the first cavity and the second cavity.
In one embodiment of the present invention, the first antenna substrate includes a first insulating substrate and a first antenna metal layer; the second antenna substrate includes a second insulating substrate and a second antenna metal layer.
In one embodiment of the present invention, the first antenna metal layer is located below or below the first insulating substrate; the second antenna metal layer is located below the second insulating substrate.
In one embodiment of the invention, the die attach structure is a conductive copper pillar.
According to another embodiment of the present invention, there is provided a method for manufacturing an antenna package structure, including:
sequentially forming a temporary bonding release layer, a first dielectric layer, a first metal layer, a second dielectric layer and a second metal layer on the carrier plate;
forming a first insulating side wall and a first metal feeder structure penetrating through the upper surface and the lower surface of the first insulating side wall above the second dielectric layer and the second metal layer;
bonding a first substrate with a manufactured first antenna metal layer above the side wall of the first insulating layer, wherein the first substrate, the first insulating side wall and the second dielectric layer form a first cavity together;
sequentially forming a third metal layer, a second insulating side wall, a second metal feeder structure penetrating through the upper surface and the lower surface of the second insulating side wall and a fourth metal layer above the first insulating side wall;
bonding the second substrate with the manufactured second antenna metal layer to the second insulating side wall and the upper part of the fourth metal layer;
removing the carrier plate and the temporary bonding release layer by bonding;
forming a chip welding structure and an external welding ball which penetrate through the first dielectric layer and are electrically connected to the first metal layer; and
and welding the antenna chip on the antenna chip welding structure.
In another embodiment of the present invention, the first metal layer, the second metal layer, the first metal feed line structure, the third metal layer, the second metal feed line structure and the fourth metal layer are electrically connected to each other.
In another embodiment of the present invention, the first and or second metal feed line structures are conductive copper pillars.
The invention provides an antenna packaging structure and a manufacturing method thereof.A dielectric layer, an antenna chip bonding pad, an external bonding pad and an interconnection metal layer are formed on a detachable bonding slide; then, manufacturing a first side wall and a first metal feed line column positioned in the first side wall on the dielectric layer, so as to form a first cavity between the first side walls; next, a first carrier plate with a first antenna metal layer is arranged above the first cavity, and the first antenna metal layer is electrically connected with the first metal feed line column; then, forming a second side wall and a second metal feeder pillar positioned in the second side wall above the first carrier plate, wherein the second metal feeder pillar is electrically connected with the first metal feeder pillar, and a second cavity is formed between the second side walls; next, a second carrier plate with a second antenna metal layer is arranged above the second cavity, and the second antenna metal layer is electrically connected with the second metal feeder column; and finally, after removing the carrier by detaching the bonding, inversely welding the antenna chip to the antenna chip bonding pad to form an external welding ball. The antenna based on the antenna packaging structure provided by the invention has the advantages of high efficiency, good performance and low loss.
Drawings
To further clarify the above and other advantages and features of embodiments of the present invention, a more particular description of embodiments of the invention will be rendered by reference to the appended drawings. It is appreciated that these drawings depict only typical embodiments of the invention and are therefore not to be considered limiting of its scope. In the drawings, the same or corresponding parts will be denoted by the same or similar reference numerals for clarity.
Fig. 1 illustrates a cross-sectional schematic view of an antenna package structure 100 formed in accordance with an embodiment of the present invention.
Fig. 2A to 2I are schematic cross-sectional views illustrating a process of forming the antenna package structure 100 according to an embodiment of the invention.
Fig. 3 shows a flow diagram 300 of a process of forming the antenna package structure 100 according to one embodiment of the invention.
Fig. 4 illustrates a cross-sectional view of an antenna package structure 400 formed in accordance with yet another embodiment of the present invention.
Detailed Description
In the following description, the invention is described with reference to various embodiments. One skilled in the relevant art will recognize, however, that the embodiments may be practiced without one or more of the specific details, or with other alternative and/or additional methods, materials, or components. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring aspects of embodiments of the invention. Similarly, for purposes of explanation, specific numbers, materials and configurations are set forth in order to provide a thorough understanding of the embodiments of the invention. However, the invention may be practiced without specific details. Further, it should be understood that the embodiments shown in the figures are illustrative representations and are not necessarily drawn to scale.
Reference in the specification to "one embodiment" or "the embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment.
It should be noted that, in the embodiments of the present invention, the process steps are described in a specific order, however, this is only for convenience of distinguishing the steps, and the order of the steps is not limited, and in different embodiments of the present invention, the order of the steps may be adjusted according to the adjustment of the process.
The invention provides an antenna packaging structure and a manufacturing method thereof.A dielectric layer, an antenna chip bonding pad, an external bonding pad and an interconnection metal layer are formed on a detachable bonding slide; then, manufacturing a first side wall and a first metal feed line column positioned in the first side wall on the dielectric layer, so as to form a first cavity between the first side walls; next, a first carrier plate with a first antenna metal layer is arranged above the first cavity, and the first antenna metal layer is electrically connected with the first metal feed line column; then, forming a second side wall and a second metal feeder pillar positioned in the second side wall above the first carrier plate, wherein the second metal feeder pillar is electrically connected with the first metal feeder pillar, and a second cavity is formed between the second side walls; next, a second carrier plate with a second antenna metal layer is arranged above the second cavity, and the second antenna metal layer is electrically connected with the second metal feeder column; and finally, after removing the carrier by detaching the bonding, inversely welding the antenna chip to the antenna chip bonding pad to form an external welding ball. The antenna based on the antenna packaging structure provided by the invention has the advantages of high efficiency, good performance and low loss.
An antenna package structure according to an embodiment of the present invention is described in detail below with reference to fig. 1. Fig. 1 illustrates a cross-sectional schematic view of an antenna package structure 100 formed in accordance with an embodiment of the present invention. As shown in fig. 1, the antenna package structure 100 further includes a first dielectric layer 101, a first metal layer 102, a second dielectric layer 103, a second metal layer 104, a first insulating sidewall 105, a first metal feed column 106, a first substrate 107, a first antenna metal layer 108, a first cavity 109, a third metal layer 110, a second insulating sidewall 111, a second metal feed column 112, a fourth metal layer 113, a second substrate 114, a second antenna metal layer 115, a second cavity 116, an antenna chip soldering structure 117, an external solder ball 118, an antenna chip 119, and an antenna chip pad 120.
The first dielectric layer 101 is located at the bottom of the whole antenna package structure 100, and may be made of organic insulating materials such as resin, PI, and cured sheet, or inorganic insulating materials such as silicon dioxide and silicon nitride.
The first metal layer 102 is disposed on the upper surface of the first dielectric layer 101, and further includes an interconnection line, an external connection pad, and a chip pad. In an embodiment of the present invention, the first metal layer 102 may be a single-layer metal layer or a multi-layer metal layer, and when the first metal layer is a multi-layer metal layer, an interlayer dielectric layer is further disposed between the same-layer metal and between adjacent-layer metals, so as to perform an insulating protection and a mechanical support function between the same-layer metal and between adjacent-layer metals.
A second dielectric layer 103 is disposed overlying first metal layer 102. In an embodiment of the present invention, the material of the second dielectric layer 103 may be an organic insulating material such as resin, PI, or cured sheet, or an inorganic insulating material such as silicon dioxide or silicon nitride.
The second metal layer 104 is disposed above the second dielectric layer 103, and the second metal layer 104 is electrically connected to the first metal layer 102 through an interlayer conductive via penetrating the second dielectric layer 103. In one embodiment of the present invention, the second metal layer 104 may be a single layer or a plurality of layers.
A first insulating sidewall 105 is disposed over the second dielectric layer 103 and the second metal layer 104. The first insulating sidewall 105 may be an insulating material such as resin or curing adhesive PI.
The first metal feed line pillar 106 is disposed in the first insulating sidewall 105, penetrates the upper and lower surfaces of the first insulating sidewall 105, and is electrically connected to the second metal layer 104. In one embodiment of the present invention, the first metal feeder pillar 106 is a conductive copper pillar.
The first substrate 107 is suspended above the first insulating sidewall 105, and the first substrate 107, the first insulating sidewall 105 and the second dielectric layer 103 together form a first cavity 109.
The first antenna metal layer 108 is a patterned metal layer disposed on the first substrate 107. In one embodiment of the present invention, the first antenna metal layer 108 is disposed on the lower surface of the first substrate 107 and is formed by an additive process or a subtractive process.
The third metal layer 110 is disposed on the top surface of the first insulating sidewall 105 and electrically connected to the first metal feeding column 106.
The second insulating sidewall 111 is disposed above the first insulating sidewall 105 and the third metal layer 110, and partially covers the edge of the first substrate 107. The second insulating sidewall 111 may also be made of insulating materials such as resin and curing adhesive PI.
The second metal wire pillar 112 is disposed in the second insulating sidewall 111, penetrates upper and lower surfaces of the second insulating sidewall 111, and is electrically connected to the third metal layer 110. In one embodiment of the present invention, the second metal feeder pillar 112 is a conductive copper pillar.
The fourth metal layer 113 is disposed on the top surface of the second insulating sidewall 111 and electrically connected to the second metal feeding line pillar 112.
The second substrate 114 is disposed above the second insulating spacers 111 and the fourth metal layer 113 in a covering manner, and the second substrate 114, the second insulating spacers 111 and the first substrate 107 together form a second cavity 116.
The second antenna metal layer 115 is a patterned metal layer disposed on the second substrate 114. In one embodiment of the present invention, the second antenna metal layer 115 is disposed on the lower surface of the second substrate 114 and is formed by an additive process or a subtractive process.
The antenna die bonding structure 117 penetrates the upper and lower surfaces of the first dielectric layer 101 and is electrically connected to the die pad of the first metal layer 102. In one embodiment of the present invention, the antenna chip bonding structure 117 is a ball-mounted, solder ball formed by a reflow process, or conductive copper pillar formed by a bronze drum plating process.
The antenna chip 119 is flip-chip bonded to the antenna chip bonding structure 117 through the antenna chip bonding pad 120, and the antenna chip 119 further implements feeding or receiving of an antenna signal through the first metal layer 102, the second metal layer 104, the first metal feeder column 106, the third metal layer 110, the second metal feeder column 112, and the fourth metal layer 113.
A method for forming the antenna package structure 100 according to an embodiment of the invention is described in detail below with reference to fig. 2A to 2I and fig. 3. Fig. 2A to 2I are schematic cross-sectional views illustrating a process of forming the antenna package structure 100 according to an embodiment of the invention; fig. 3 shows a flow diagram 300 of a process of forming the antenna package structure 100 according to one embodiment of the invention.
First, in step 310, as shown in fig. 2A, a temporary bonding release layer 202, a first dielectric layer 203, a first metal layer 204, a second dielectric layer 205, and a second metal layer 206 are sequentially formed on the upper surface of a carrier 201. In an embodiment of the invention, after the temporary bonding glue 202 is coated on the carrier 201, the prepreg is attached to form the insulating layer 203, the first metal layer 204 is formed by patterned electroplating, the second dielectric layer 205 is attached to form the second dielectric layer 205, the second dielectric layer 205 is patterned through hole, and then the second metal layer 206 and the interlayer conductive through hole electrically connecting the second metal layer 206 to the first metal layer 204 are formed by one-step electroplating. In one embodiment of the present invention, the first metal layer 204 and/or the second metal layer are a single or multiple layers of redistribution routing layers, wherein the lowest layer of the first metal layer 204 has a chip pad and an external pad.
Next, in step 320, as shown in fig. 2B, a first insulating sidewall 207 and a first metal feed line structure 208 are formed over the second dielectric layer 205 and the second metal layer 206. In an embodiment of the invention, the first insulating sidewall 207 is formed by front surface mounting a cured sheet/prepreg, and then grooving the middle, or by patterning in advance to form the first insulating sidewall 207 and then directly mounting the first insulating sidewall. In another embodiment of the present invention, the first metal feed line structure 208 is a metal pillar disposed in the first insulating sidewall 207 and electrically connected to the second metal layer 206.
Then, in step 330, as shown in fig. 2C, a first antenna metal layer 210 is formed on the first substrate 209. In an embodiment of the present invention, the first substrate 209 may be a substrate made of an inorganic material such as silicon or glass, or may be an organic substrate. In another embodiment of the present invention, the first antenna metal layer 210 is formed on the first side of the first substrate 209 by depositing a plating seed layer, and performing photolithography, plating, photoresist stripping, etching to remove an excess seed layer, and then performing a thinning process on the second side of the first substrate 209.
Next, in step 340, as shown in fig. 2D, the first substrate 209 with the fabricated first antenna metal layer 210 is bonded above the first insulating layer sidewall spacer 207, and the first substrate 209, the first insulating sidewall spacer 207 and the second dielectric layer 205 together form a first cavity 211, where the first substrate 209 only partially covers the first insulating layer sidewall spacer 207, and the first metal feeder structure 208 is exposed.
Then, in step 350, as shown in fig. 2E, a third metal layer 212, a second insulating sidewall spacer 213, a second metal feed line structure 214, and a fourth metal layer are sequentially formed over the first insulating sidewall 207. Wherein a third metal layer 212 is disposed on the upper surface of the first insulating sidewall 207 and electrically connected to the first metal feed line structure 208; the second insulating sidewall 213 is located above the first insulating sidewall 207 and the third metal layer 212, and partially covers the edge of the first substrate 209, so that the second insulating sidewall 213 and the first insulating sidewall 207 together form a damascene fixing structure for the first substrate 209; the second metal feed line structure 214 is disposed to penetrate the upper and lower surfaces of the second insulating sidewall spacers 213 and electrically connected to the third metal layer 212; the fourth metal layer 215 is disposed on the upper surface of the second insulating sidewall spacer 213 and is electrically connected to the second metal feed line structure 214. In one embodiment of the present invention, the second metal feed line structure 214 is a conductive metal pillar.
Next, in step 360, as shown in fig. 2F, the second substrate 216 with the fabricated second antenna metal layer 217 is bonded to the second insulating sidewall 213 and the fourth metal layer 215. The second substrate 216, the second insulating spacers 213 and the first substrate 209 together form a second cavity 218.
Then, at step 370, carrier plate 201 and temporary bond release layer 202 are debonded as shown in fig. 2G. In an embodiment of the present invention, the temporary bonding release layer 202 is a laser debonding bonding material, the carrier 201 is a transparent substrate, the temporary bonding release layer 202 is peeled off by irradiating laser below the carrier 201, and then debonding is performed after cleaning.
Next, at step 380, as shown in fig. 2H, the antenna chip bonding structures 219 and the external solder balls 220 are formed through the first dielectric layer 203 and electrically connected to the first metal layer 204. In one embodiment of the present invention, the antenna chip bonding structure 219 is a conductive Copper pillar (Copper pillar) formed by patterned plating, and the external solder balls 220 are external solder balls formed by ball-mounting process.
Finally, at step 390, as shown in fig. 2I, the antenna chip 221 is flip-chip bonded on the antenna chip bonding structure 219, and the antenna chip 221 is electrically connected to the antenna chip bonding structure 219 through the chip bonding pad 222.
An antenna package structure according to another embodiment of the present invention is described in detail with reference to fig. 4. Fig. 4 illustrates a cross-sectional view of an antenna package structure 400 formed in accordance with yet another embodiment of the present invention. As shown in fig. 4, the antenna package structure 400 further includes a first dielectric layer 401, a first metal layer 402, a second dielectric layer 403, a second metal layer 404, a first insulating sidewall 405, a first metal feed pillar 406, a first substrate 407, a first antenna metal layer 408, a first cavity 409, a third metal layer 410, a second insulating sidewall 411, a second metal feed pillar 412, a fourth metal layer 413, a second substrate 414, a second antenna metal layer 415, a second cavity 416, an antenna chip soldering structure 417, an external solder ball 418, an antenna chip 419, and an antenna chip pad 420.
The antenna package structure 400 is different from the antenna package structure 100 only in that the first antenna metal layer 408 is located on the upper surface of the first substrate 407.
Based on the antenna packaging structure and the manufacturing method thereof provided by the invention, a dielectric layer, an antenna chip bonding pad, an external bonding pad and an interconnection metal layer are formed on a detachable bonding slide; then, manufacturing a first side wall and a first metal feed line column positioned in the first side wall on the dielectric layer, so as to form a first cavity between the first side walls; next, a first carrier plate with a first antenna metal layer is arranged above the first cavity, and the first antenna metal layer is electrically connected with the first metal feed line column; then, forming a second side wall and a second metal feeder pillar positioned in the second side wall above the first carrier plate, wherein the second metal feeder pillar is electrically connected with the first metal feeder pillar, and a second cavity is formed between the second side walls; next, a second carrier plate with a second antenna metal layer is arranged above the second cavity, and the second antenna metal layer is electrically connected with the second metal feeder column; and finally, after removing the carrier by detaching the bonding, inversely welding the antenna chip to the antenna chip bonding pad to form an external welding ball. The antenna based on the antenna packaging structure provided by the invention has the advantages of high efficiency, good performance and low loss.
While various embodiments of the present invention have been described above, it should be understood that they have been presented by way of example only, and not limitation. It will be apparent to persons skilled in the relevant art that various combinations, modifications, and changes can be made thereto without departing from the spirit and scope of the invention. Thus, the breadth and scope of the present invention disclosed herein should not be limited by any of the above-described exemplary embodiments, but should be defined only in accordance with the following claims and their equivalents.
Claims (10)
1. An antenna package structure, comprising:
a first dielectric layer;
the first metal layer is arranged above the first dielectric layer;
the second dielectric layer is arranged above the first dielectric layer and the first metal layer;
a second metal layer disposed over the second dielectric layer and electrically connected to the first metal layer by a conductive via that penetrates the second dielectric layer;
the first insulating side wall is arranged above part of the second dielectric layer;
the first metal feeder structure penetrates through the upper surface and the lower surface of the first insulating side wall and is electrically connected to the second metal layer;
the first antenna substrate is arranged above the first insulating side wall and forms a first cavity together with the first insulating side wall and the second dielectric layer;
the third metal layer is arranged above the first insulating side wall and is electrically connected to the first metal feeder line structure;
the second insulating side wall is arranged above the first insulating side wall and the third metal layer and partially covers the first antenna substrate;
the second metal feeder structure penetrates through the upper surface and the lower surface of the second insulating side wall and is electrically connected to the third metal layer;
the fourth metal layer is arranged above the second insulating side wall and is electrically connected to the second metal feeder line structure;
the second antenna substrate is arranged above the second insulating side wall and the fourth metal layer and forms a second cavity together with the second insulating side wall and the first antenna substrate;
a die bond structure extending through the first dielectric layer and electrically connected to the first metal layer;
the external solder ball penetrates through the first dielectric layer and is electrically connected to the first metal layer; and
an antenna chip electrically connected to the chip bonding structure.
2. The antenna package structure of claim 1, wherein the first metal layer has a single or multiple layout wiring layers, wherein a lowermost layer has external connection pads and chip pads, the external connection solder balls are disposed on the external connection pads, and the chip bonding structure is disposed on the chip pads.
3. The antenna package of claim 1, wherein the first metal feed line structure and or the second metal feed line structure are metal feed line posts.
4. The antenna package structure of claim 1, wherein the first antenna substrate is embedded in the first insulating sidewall and the second insulating sidewall in a suspended manner to form the first cavity and the second cavity.
5. The antenna package structure of claim 1, wherein the first antenna substrate comprises a first insulating substrate and a first antenna metal layer; the second antenna substrate includes a second insulating substrate and a second antenna metal layer.
6. The antenna package structure of claim 5, wherein the first antenna metal layer is located under or below the first insulating substrate; the second antenna metal layer is located below the second insulating substrate.
7. The antenna package of claim 1, wherein the die attach structure is a conductive copper pillar.
8. A manufacturing method of an antenna packaging structure comprises the following steps:
sequentially forming a temporary bonding release layer, a first dielectric layer, a first metal layer, a second dielectric layer and a second metal layer on the carrier plate;
forming a first insulating side wall and a first metal feeder structure penetrating through the upper surface and the lower surface of the first insulating side wall above the second dielectric layer and the second metal layer;
bonding a first substrate with a manufactured first antenna metal layer above the side wall of the first insulating layer, wherein the first substrate, the first insulating side wall and the second dielectric layer form a first cavity together;
sequentially forming a third metal layer, a second insulating side wall, a second metal feeder structure penetrating through the upper surface and the lower surface of the second insulating side wall and a fourth metal layer above the first insulating side wall;
bonding the second substrate with the manufactured second antenna metal layer to the second insulating side wall and the upper part of the fourth metal layer;
removing the carrier plate and the temporary bonding release layer by bonding;
forming a chip welding structure and an external welding ball which penetrate through the first dielectric layer and are electrically connected to the first metal layer; and
and welding the antenna chip on the antenna chip welding structure.
9. The method of manufacturing a wafer level package on package structure of claim 8, wherein the first metal layer, the second metal layer, the first metal feed line structure, the third metal layer, the second metal feed line structure, and the fourth metal layer are electrically connected to each other.
10. The method of fabricating a wafer level stack package structure of claim 8, wherein the first and or second metal feed line structures are conductive copper pillars.
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