CN111415870A - Method for improving performance of metal oxide TFT device prepared by solution method - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 52
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 20
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 20
- 239000002243 precursor Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000000137 annealing Methods 0.000 claims abstract description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 6
- 239000002904 solvent Substances 0.000 claims abstract description 5
- 238000001914 filtration Methods 0.000 claims abstract description 3
- 239000000126 substance Substances 0.000 claims abstract description 3
- 239000000243 solution Substances 0.000 claims description 62
- 238000004528 spin coating Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 10
- 238000009832 plasma treatment Methods 0.000 claims description 8
- 229910021626 Tin(II) chloride Inorganic materials 0.000 claims description 5
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- AXZWODMDQAVCJE-UHFFFAOYSA-L tin(II) chloride (anhydrous) Chemical compound [Cl-].[Cl-].[Sn+2] AXZWODMDQAVCJE-UHFFFAOYSA-L 0.000 claims description 5
- 230000032683 aging Effects 0.000 claims description 4
- 235000019441 ethanol Nutrition 0.000 claims description 4
- 150000004703 alkoxides Chemical class 0.000 claims description 2
- 239000007864 aqueous solution Substances 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 238000007639 printing Methods 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 24
- 239000010408 film Substances 0.000 abstract description 17
- 238000002360 preparation method Methods 0.000 abstract description 10
- 239000002346 layers by function Substances 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 3
- 238000009987 spinning Methods 0.000 abstract 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 31
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 14
- 229910052760 oxygen Inorganic materials 0.000 description 14
- 239000001301 oxygen Substances 0.000 description 14
- 239000002245 particle Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000012074 organic phase Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Abstract
The invention belongs to the technical field of printed electronics, and discloses a method for improving the performance of a metal oxide TFT (thin film transistor) device prepared by a solution method. Dissolving a metal precursor in an alcohol solvent to form a precursor solution, and then adding H2O2The solution is stirred, mixed uniformly, then is kept stand and aged, insoluble substances are removed by filtration, the solution is subjected to ultrasonic defoaming and then is coated on a pretreated substrate in a spinning mode, and an active layer is obtained through annealing treatment; and preparing source and drain electrodes on the active layer to obtain the metal oxide TFT device. The invention adds H2O2The problem of overlarge off-state current commonly existing in the preparation of the metal oxide TFT by the current solution method can be solved, and the power consumption of the device is reduced. And the compactness of the film can be improved, the contact characteristic of the active layer and other functional layers can be improved, and the performance of the TFT device can be improved.
Description
Technical Field
The invention belongs to the technical field of printed electronics, and particularly relates to a method for improving the performance of a metal oxide TFT (thin film transistor) device prepared by a solution method.
Background
With the rapid development of smart televisions, tablet computers and smart phones, high resolution and low cost are inevitable trends in development. This requires a Thin Film Transistor (TFT) as a core element of a display driver circuit to be miniaturized, have high performance, and be low in cost. The active layer is critical in determining the performance of the TFT device. The metal oxide semiconductor material has high mobility (10-80 cm)2Vs), large-area uniformity, simple preparation and the like, can solve the problems of low mobility of the traditional amorphous silicon (a-Si), complex process, high cost and difficulty in large-area preparation of the low-temperature polycrystalline silicon (L TPS), and has wide application prospect in high-resolution display devices.
In the prior art, the defects such as oxygen vacancy and the like are easily generated in the process of preparing the metal oxide by a solution method, so that the problems of overlarge off-state current, poor stability, high power consumption and the like of a TFT are caused. In the process of preparing the TFT by a vacuum method, the oxygen vacancy defect is often reduced by an element doping method, but the problems of precipitation, low effect and the like are easily caused due to the existence of a dissolution limit in a solution system, and the problems of overlarge off-state current and the like of the metal oxide TFT prepared by the solution method cannot be effectively solved. There is therefore a need for continued improvements and optimization of solution process technology.
Disclosure of Invention
In view of the above disadvantages and shortcomings of the prior art, the present invention is directed to a method for improving the performance of a metal oxide TFT device prepared by a solution method.
The purpose of the invention is realized by the following technical scheme:
a method for improving the performance of a metal oxide TFT device prepared by a solution method comprises the following steps:
(1) selecting metal salt or metal alkoxide as precursor, dissolving in alcohol solvent to form uniform and clear precursor solution, and adding H2O2Stirring and mixing the solution uniformly, standing and aging, filtering to remove insoluble substances, and ultrasonically defoaming for later use;
(2) spin-coating the solution obtained in the step (1) on the pretreated substrate, and carrying out annealing treatment to obtain an active layer;
(3) and (3) preparing a source electrode and a drain electrode on the active layer in the step (2) to obtain the metal oxide TFT device.
Further, the precursor in the step (1) is SnCl2·2H2O and Zr (NO)3)4·5H2And O, wherein the alcohol solvent refers to absolute ethyl alcohol.
Further, said H in step (1)2O2Solution means a concentration of 30 wt.% H2O2An aqueous solution; h2O2The volume ratio of the added solution is 0.25-0.5%.
Further, the concentration of the precursor solution in the step (1) is 0.1-0.3 mol/L.
Further, the standing aging time in the step (1) is 24 hours.
Further, the ultrasonic defoaming time in the step (1) is 10-15 min.
Further, the pretreated substrate in the step (2) refers to a substrate containing a bottom gate electrode and an insulating layer after plasma treatment; the power of plasma treatment is 100-150W, and the time is 6-12 min. The wetting effect and the adhesiveness of the solution on the substrate are enhanced by the plasma treatment.
Further, the rotating speed of the spin coating in the step (2) is 5000-7000 rpm; the spin coating time is 20-30 s.
Further, the temperature of the annealing treatment in the step (2) is 300-400 ℃.
Further, the source and drain electrodes in the step (3) are prepared by processes such as sputtering, evaporation, printing and the like.
The principle of the invention is as follows: by adding trace hydrogen peroxide into the precursor solution and using the solution for preparing an active layer and a TFT, the problems of overlarge off-state current and poor stability of a metal oxide TFT in the prior art are solved, and the performance of the TFT is improved. Hydrogen peroxide has two roles in precursor solution systems: the oxygen vacancy is compensated in the process of preparing the metal oxide film as an oxygen element donor, so that the carrier concentration is reduced, and the off-state current of the TFT is further reduced; and secondly, as an oxidant, in the annealing process, the metal element can be better combined with oxygen, the compactness of the film is improved, the contact characteristic of the active layer and other functional layers is improved, the interlayer defect density of the TFT is reduced, and the performance of the TFT device is improved. Aiming at various metal oxides, active layers with different oxygen vacancy concentrations are obtained by adjusting the adding amount of hydrogen peroxide, so that the performance of the TFT is improved.
The method of the invention has the following advantages and beneficial effects:
(1) the method utilizes hydrogen peroxide as an oxygen element donor, and can effectively compensate oxygen vacancies generated in the process of preparing the metal oxide film by a solution method, thereby reducing the carrier concentration of an active layer, solving the problem of overlarge off-state current commonly existing in the preparation of the metal oxide TFT by the current solution method, and reducing the power consumption of a device.
(2) The hydrogen peroxide is used as an oxidant, so that the combination of metal elements and oxygen can be promoted in the annealing process, the compactness of the film is improved, the contact characteristic of an active layer and other functional layers is improved, and the performance of the TFT device is improved.
(3) Compared with the prior art, the method has the advantages of no toxicity, environmental protection, low cost, simplicity, rapidness, strong universality and suitability for large-scale production.
Drawings
FIG. 1 is a schematic diagram of the structure of a ZTO-TFT in an embodiment of the invention.
FIG. 2 is a graph (a) of the output and a graph (b) of a ZTO-TFT of example 1 of the present invention without hydrogen peroxide.
FIG. 3 is a graph (a) showing the output and transition curves (b) of ZTO-TFT to which hydrogen peroxide was added in example 1 of the present invention.
Detailed Description
The present invention will be described in further detail with reference to examples and drawings, but the present invention is not limited thereto.
Example 1
(1) Taking a proper amount of SnCl2·2H2O and Zr (NO)3)4·5H2Dissolving O powder in absolute ethyl alcohol, preparing precursor solution with tin concentration of 0.1 mol/L and zirconium doping proportion of 15 at.%, sealing the solution, placing the solution in a magnetic stirrer, fully stirring for 4H to make the solution uniform, then taking down and adding 30 wt.% of H2O2，H2O2The volume ratio of the solution to the original solution is 0.375 percent, the solution is stirred for 30min again, and then the solution is taken down, kept stand and aged for 24 h. The solution was filtered through a 0.22 μm bore organic phase pin filter to remove insoluble particles and avoid particle impurities. The solution was then sonicated for 10min to remove air bubbles for use.
(2) For clean bottom gate (ITO, 300 nm)/insulating layer (Al)2O3200nm) glass substrate plasma treatment for 10min at a power of 120W. And (2) dripping 40ul of the solution obtained in the step (1) on a substrate, spin-coating a KW-4A type spin coater to prepare a film, spin-coating the film at 6000rpm for 30s, and annealing the film in air at 350 ℃ for 1h to finish the preparation of the ZTO active layer.
(3) And preparing an Al film with the thickness of 150nm on the ZTO active layer by using sputtering equipment as a source drain electrode to finish the preparation of the ZTO-TFT.
The schematic structure of the ZTO-TFT obtained in this example is shown in FIG. 1.
In this example, the effect of hydrogen peroxide as an oxygen donor is as follows:
during annealing of tin oxide, the neutral oxygen vacancies formed by oxygen atoms in the crystal lattice migrating to the surface are easily ionized, releasing electrons, resulting in too high a concentration of native tin oxide carriers reaction is shown at ①:
OL→VO ++1/2O2+e ①
too high a carrier concentration results in too large an off-state current of the TFT, and for this reason, a trace amount of hydrogen peroxide is added in this example to compensate for the excess oxygen vacancy in the tin oxide, thereby reducing the off-state current of the TFT. the reaction takes place as shown at ②
VO ++O+e→O L②
Devices of ZTO-TFT prepared in this example and without addition of H2O2The device performance of the prepared ZTO-TFT is shown in Table 1:
table 1: device performance of ZTO-TFT
As shown in table 1, after adding hydrogen peroxide, the off-state current of the TFT decreased by nearly 3 orders of magnitude and the on-off ratio increased by nearly two orders of magnitude. Meanwhile, the subthreshold swing is remarkably reduced from 16.2V/dec to 1.55V/dec.
The output graph (a) and the transfer graph (b) of the corresponding ZTO-TFT without hydrogen peroxide addition are shown in FIG. 2. The output graph (a) and the transfer graph (b) of the ZTO-TFT with hydrogen peroxide added are shown in FIG. 3.
As can be seen from the above results, hydrogen peroxide effectively compensates for excess oxygen vacancies in tin oxide, resulting in a reduction in carrier concentration, thereby reducing the off-state current of the TFT device. On the other hand, the hydrogen peroxide enables metal elements to be better combined with oxygen, the compactness of the active layer is improved, the contact characteristic of the active layer and other functional layers is enhanced, and the defect density between layers is reduced, so that the subthreshold swing is obviously reduced.
Example 2:
(1) taking a proper amount of SnCl2·2H2O and Zr (NO)3)4·5H2Dissolution of O powderPreparing a precursor solution with the tin concentration of 0.1 mol/L and the zirconium doping proportion of 15 at.% in absolute ethyl alcohol, sealing the solution, placing the solution in a magnetic stirrer, fully stirring the solution for 4 hours to be uniform, then taking down the solution and adding 30 wt.% of H2O2，H2O2The volume ratio of the solution to the original solution is 0.25 percent, the solution is stirred for 30min again, and then the solution is taken down, kept stand and aged for 24 h. The solution was filtered through a 0.22 μm bore organic phase pin filter to remove insoluble particles and avoid particle impurities. The solution was then sonicated for 10min to remove air bubbles for use.
(2) For clean bottom gate (ITO, 300 nm)/insulating layer (Al)2O3200nm) glass substrate plasma treatment for 10min at a power of 120W. And (2) dripping 40ul of the solution obtained in the step (1) on a substrate, spin-coating a KW-4A type spin coater to prepare a film, spin-coating the film at 6000rpm for 30s, and annealing the film in air at 350 ℃ for 1h to finish the preparation of the ZTO active layer.
(3) And preparing an Al film with the thickness of 150nm on the ZTO active layer by using sputtering equipment as a source drain electrode to finish the preparation of the ZTO-TFT.
Example 3:
(1) taking a proper amount of SnCl2·2H2O and Zr (NO)3)4·5H2Dissolving O powder in absolute ethyl alcohol, preparing precursor solution with tin concentration of 0.1 mol/L and zirconium doping proportion of 15 at.%, sealing the solution, placing the solution in a magnetic stirrer, fully stirring for 4H to make the solution uniform, then taking down and adding 30 wt.% of H2O2，H2O2The volume ratio of the solution to the original solution is 0.5 percent, the solution is stirred for 30min again, and then the solution is taken down, kept stand and aged for 24 h. The solution was filtered through a 0.22 μm bore organic phase pin filter to remove insoluble particles and avoid particle impurities. The solution was then sonicated for 10min to remove air bubbles for use.
(2) For clean bottom gate (ITO, 300 nm)/insulating layer (Al)2O3200nm) glass substrate plasma treatment for 10min at a power of 120W. And (2) dripping 40ul of the solution obtained in the step (1) on a substrate, spin-coating a KW-4A type spin coater to prepare a film, spin-coating the film at 6000rpm for 30s, and annealing the film in air at 350 ℃ for 1h to finish the preparation of the ZTO active layer.
(3) And preparing an Al film with the thickness of 150nm on the ZTO active layer by using sputtering equipment as a source drain electrode to finish the preparation of the ZTO-TFT.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (10)
1. A method for improving the performance of a metal oxide TFT device prepared by a solution method is characterized by comprising the following steps:
(1) selecting metal salt or metal alkoxide as precursor, dissolving in alcohol solvent to form uniform and clear precursor solution, and adding H2O2Stirring and mixing the solution uniformly, standing and aging, filtering to remove insoluble substances, and ultrasonically defoaming for later use;
(2) spin-coating the solution obtained in the step (1) on the pretreated substrate, and carrying out annealing treatment to obtain an active layer;
(3) and (3) preparing a source electrode and a drain electrode on the active layer in the step (2) to obtain the metal oxide TFT device.
2. The method of claim 1, wherein the method comprises the steps of: the precursor in the step (1) is SnCl2·2H2O and Zr (NO)3)4·5H2And O, wherein the alcohol solvent refers to absolute ethyl alcohol.
3. The method of claim 1, wherein the method comprises the steps of: said H in step (1)2O2Solution means a concentration of 30 wt.% H2O2An aqueous solution; h2O2The volume ratio of the added solution is 0.25-0.5%.
4. The method for improving the performance of the metal oxide TFT device prepared by the solution method according to claim 1, wherein the concentration of the precursor solution in the step (1) is 0.1-0.3 mol/L.
5. The method of claim 1, wherein the method comprises the steps of: and (2) standing and aging for 24 hours in the step (1).
6. The method of claim 1, wherein the method comprises the steps of: the ultrasonic defoaming time in the step (1) is 10-15 min.
7. The method of claim 1, wherein the method comprises the steps of: the pretreated substrate in the step (2) is a substrate which is subjected to plasma treatment and contains a bottom grid electrode and an insulating layer; the power of plasma treatment is 100-150W, and the time is 6-12 min.
8. The method of claim 1, wherein the method comprises the steps of: the rotating speed of the spin coating in the step (2) is 5000-7000 rpm; the spin coating time is 20-30 s.
9. The method of claim 1, wherein the method comprises the steps of: the temperature of the annealing treatment in the step (2) is 300-400 ℃.
10. The method of claim 1, wherein the method comprises the steps of: and (4) preparing the source and drain electrodes in the step (3) by sputtering or evaporation and printing processes.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150011045A1 (en) * | 2013-07-05 | 2015-01-08 | Industry-Academic Cooperation Foundation, Yonsei University | Method of forming oxide thin film and method of fabricating oxide thin film transistor using hydrogen peroxide |
| CN108447790A (en) * | 2018-04-10 | 2018-08-24 | 华南理工大学 | A kind of thin film transistor (TFT) and preparation method thereof based on low-temperature oxidation zirconium insulating layer |
| CN108766889A (en) * | 2018-05-28 | 2018-11-06 | 华南理工大学 | A kind of method that solwution method prepares oxide thin film transistor |
| US20180337358A1 (en) * | 2017-05-18 | 2018-11-22 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Method for fabricating thin film transistor, method for fabricating array substrate, and a display apparatus |
| CN109616525A (en) * | 2018-11-28 | 2019-04-12 | 华南理工大学 | A kind of method that solwution method prepares zirconium aluminum oxide insulating layer of thin-film and laminated construction |
| CN110047915A (en) * | 2019-04-12 | 2019-07-23 | 西交利物浦大学 | One kind is based on two-dimensional semiconductor material film transistor and preparation method thereof |
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2020
- 2020-04-17 CN CN202010303112.XA patent/CN111415870A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150011045A1 (en) * | 2013-07-05 | 2015-01-08 | Industry-Academic Cooperation Foundation, Yonsei University | Method of forming oxide thin film and method of fabricating oxide thin film transistor using hydrogen peroxide |
| US20180337358A1 (en) * | 2017-05-18 | 2018-11-22 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Method for fabricating thin film transistor, method for fabricating array substrate, and a display apparatus |
| CN108447790A (en) * | 2018-04-10 | 2018-08-24 | 华南理工大学 | A kind of thin film transistor (TFT) and preparation method thereof based on low-temperature oxidation zirconium insulating layer |
| CN108766889A (en) * | 2018-05-28 | 2018-11-06 | 华南理工大学 | A kind of method that solwution method prepares oxide thin film transistor |
| CN109616525A (en) * | 2018-11-28 | 2019-04-12 | 华南理工大学 | A kind of method that solwution method prepares zirconium aluminum oxide insulating layer of thin-film and laminated construction |
| CN110047915A (en) * | 2019-04-12 | 2019-07-23 | 西交利物浦大学 | One kind is based on two-dimensional semiconductor material film transistor and preparation method thereof |
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Application publication date: 20200714 |