CN106927689A - A kind of oxide semiconductor thin-film and its preparation technology - Google Patents

A kind of oxide semiconductor thin-film and its preparation technology Download PDF

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CN106927689A
CN106927689A CN201710250474.5A CN201710250474A CN106927689A CN 106927689 A CN106927689 A CN 106927689A CN 201710250474 A CN201710250474 A CN 201710250474A CN 106927689 A CN106927689 A CN 106927689A
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oxide semiconductor
film
semiconductor thin
aqueous solution
preparation technology
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兰林锋
王磊
彭俊彪
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South China University of Technology SCUT
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23Oxides
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00Methods for coating glass
    • C03C2218/10Deposition methods
    • C03C2218/11Deposition methods from solutions or suspensions
    • C03C2218/116Deposition methods from solutions or suspensions by spin-coating, centrifugation

Abstract

Of the invention kind of oxide semiconductor thin-film and its preparation technology, thin film composition is M2xIn2‑2xO3‑δ, and not including Zn and Sn in composition, wherein M is III B races element in the periodic table of elements, and 0.001≤x≤0.3,0≤δ < 3 are prepared using the aqueous solution, and not carbon elements in the aqueous solution.It is hydrolyzed reaction as precursor solution using the aqueous solution of In salt and M salt, then film forming is carried out to the solution after hydrolysis, being annealed under conditions of temperature is not higher than 300 degrees Celsius after film forming is prepared from.The solute of the aqueous solution is the one kind in nitrate, chloride, hydroxide or perchlorate.Film prepared by the preparation method of oxide semiconductor thin-film of the invention, with electron mobility higher;Carrier concentration can be adjusted by adjusting the content of IIIB races element again simultaneously, turn-off performance is good, good stability, preparation process is simple, strong applicability, environmental protection.

Description

A kind of oxide semiconductor thin-film and its preparation technology
Technical field
The present invention relates to semiconductor materials and devices technical field, more particularly to a kind of oxide semiconductor thin-film and its Preparation technology.
Background technology
In recent years, in FPD especially in ORGANIC ELECTROLUMINESCENCE DISPLAYS (OLED) field, based oxide semiconductor Thin film transistor (TFT) (TFT, Thin Film Transistor) be increasingly taken seriously.
Material currently used for the semiconductor channel layer of the thin film transistor (TFT) of FPD is mainly silicon materials, including amorphous Silicon (a-Si:H), polysilicon, microcrystal silicon etc..But amorphous silicon film transistor exist it is low to photaesthesia, mobility (<1cm2/ Vs) and stability difference the shortcomings of;Although polycrystalline SiTFT is with mobility higher, because the influence of crystal boundary is led Its electricity lack of homogeneity is caused, further, since polysilicon preparation temperature is high, high cost, be difficult to large area crystallization, it is limited flat Plate show in application;And microcrystal silicon exists and prepares that difficulty is big, crystal grain control technology difficulty is high, it is not easy to realize large area scale The defect of volume production.
Oxide semiconductor has carrier mobility (1~100cm higher2/ Vs), to visible transparent the advantages of, The TFT substrate field of FPD, the trend for having the thin film transistor (TFT) of replacement tradition silicon technology preparation.
In the prior art, most of oxide semiconductor material be all with ZnO as matrix, be further incorporated into In, Ga, Al or The elements such as Sn.There is the difficult defect of shut-off in the thin film transistor (TFT) of such oxide semiconductor material, i.e., when grid voltage is zero Larger source-drain current is still present, device is in normally open, causes device quality not high enough.
In addition, such semi-conducting material is very sensitive to the water oxygen in air, the device without passivation layer is just swept and flyback Transfer characteristic curve between hysteresis effect it is obvious.For being coated with passivation layer (the especially insulation material such as polymer, photoresist Material) device, because extraneous oxygen further cannot be adsorbed on oxide semiconductor, cause the oxygen on oxide semiconductor surface Room is increased, and device height easily occurs and leads state, i.e. oxide semiconductor presentation conductor features.This is allowed for based on this kind of oxidation The thin film transistor (TFT) of thing semi-conducting material is typically only capable to use SiO2As passivation layer or etching barrier layer, and cannot be using can be with The insulating materials such as the patterned polymer of chemical development or photoresist does passivation layer, increased process costs;Simultaneously because SiO2 Pliability it is poor, it is more difficult to in flexible substrate.
In addition, the above-mentioned oxide semiconductor material with ZnO as matrix generally needs more than 300 DEG C of after annealing Temperature, and be typically only capable to be annealed under air or oxygen atmosphere, because the oxygen in the external world generally will could be empty with oxygen at 300 DEG C or so Position in cationoid reaction and effectively fill Lacking oxygen.If annealed in nitrogen or inert gas, can be because cannot obtain Obtain oxygen and cause height to lead phenomenon.300 DEG C of annealing temperature is relatively low for glass substrate, but for flexible substrate For, it has been over the maximum temperature that most of flexible substrate material can bear.
Patent document (CN 201310276865.6) discloses a kind of oxide semiconductor thin-film, and composition is M2xIn2- 2xO3-δAnd do not include that Zn and Sn, wherein M are III B races element in the periodic table of elements, 0.001≤x≤0.3,0≤δ < in composition 3.However, this film is prepared, it is necessary to the vacuum equipment of costliness by the method for sputtering, preparation cost is higher.
Non-patent literature (Adv.Electron.Mater.2015,1,1500146) discloses a kind of using solution preparation The In of Sc, Y, La doping2O3The method of film, but the method uses organic solvent, and with the addition of some have it is inflammable and explosive The fuel of property reduces annealing temperature, not only not environmentally, and carbon can be caused to remain.
Therefore, in view of the shortcomings of the prior art, to provide a kind of oxide semiconductor thin-film and its preparation technology existing to overcome Technical deficiency is very necessary.
The content of the invention
There is provided that a kind of turn-off performance is good it is an object of the invention to avoid the deficiencies in the prior art part, can be applicable In the oxide semiconductor thin-film of flexible substrate material, it is the channel layer materials for thin film transistor (TFT), with turn-off performance Well, the characteristics of good stability, preparation process is simple, strong applicability.
Above-mentioned purpose of the invention is realized by following technological means.
A kind of preparation technology of oxide semiconductor thin-film is provided, thin film composition is M2xIn2-2xO3- δ,And without Zn and Sn, Wherein M is III B races element in the periodic table of elements, and 0.001≤x≤0.3,0≤δ < 3, the aqueous solution using In salt and M salt is made For precursor solution is hydrolyzed reaction, then film forming is carried out to the solution after hydrolysis, being not higher than 300 in temperature after film forming takes the photograph Annealing is prepared under conditions of family name's degree.
Preferably, the solute of the aqueous solution is the one kind in nitrate, chloride, hydroxide or perchlorate.
Another preferred, the solute of the aqueous solution includes nitrate and perchlorate simultaneously.
Another preferred, the solute of the aqueous solution is at least two materials in nitrate, chloride, hydroxide;Or
The solute of the aqueous solution is at least two materials in perchlorate, chloride, hydroxide.
Preferably, not carbon elements in the aqueous solution.
Preferably, the III B races element be Sc, Y, Ac, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, The element of one kind or any two or more combinations in Yb or Lu;
M2xIn2-2xO3-δPrepare specifically with the aqueous solution of indium nitrate, villaumite indium or perchloric acid indium as precursor solution, With with one kind in Sc, Y, Ac, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu or any two kinds More than the aqueous solution of nitrate, villaumite or perchlorate of element be hydrolyzed reaction for precursor solution.
Preferably, the III B races element is Nd or Sc.
It is furthermore preferred that the III B races element is Sc.
Preferably, the preparation technology of above-mentioned oxide semiconductor thin-film, specifically using drop coating, spin coating, blade coating, spraying or print The method of brush carries out film forming.
Another preferred, the preparation technology of above-mentioned oxide semiconductor thin-film, annealing temperature is not higher than 230 degrees Celsius.
Preferably, when above-mentioned precursor solution is villaumite, coordinate ultraviolet light or corona treatment, and annealed, move back Fiery temperature is less than 200 degrees Celsius;
The atmosphere gas of annealing are air or inert gas.
Present invention simultaneously provides a kind of oxide semiconductor thin-film, it is prepared from by above-mentioned preparation technology, for making It is the channel layer of thin film transistor (TFT).
(1) film prepared by the preparation method of oxide semiconductor thin-film of the invention, with electron transfer higher Rate;Carrier concentration can be adjusted by adjusting the content of IIIB races element again simultaneously, so as to regulate and control based on oxide of the invention The threshold voltage of the thin film transistor (TFT) of semiconductor film material.
(2) film prepared by the preparation method of oxide semiconductor thin-film of the invention to the water in air, oxygen less Sensitivity, the thin film transistor (TFT) of the non-passivation layer protection based on oxide semiconductor film materials of the invention is just swept and flyback Hysteresis effect between transfer characteristic curve is smaller;Meanwhile, thin film transistor (TFT) is insensitive to passivation material, can directly using poly- Compound or photoresist insulating materials are passivated, and reduce process costs.
(3) the preparation method after annealing temperature of oxide semiconductor thin-film of the invention is relatively low, can be compatible with flexible substrate; And being annealed under nitrogen or inert gas atmosphere can still keep characteristic of semiconductor, anti-attenuation higher is shown.
(4) film prepared by the preparation method of oxide semiconductor thin-film of the invention, mixes band gap after III B races element Broadening, increases photostability.
(5) film prepared by the preparation method of oxide semiconductor thin-film of the invention, due to In2O3With unit of IIIB races The trivalent of element belongs to bixbyite structure, would not heavy damage In after so adulterating2O3Original lattice, favorably In reduction defect;Simultaneously as the main valence state of the main valence state of ion of IIIB races element and In is in trivalent, so, mix The more than needed of electronics is not resulted in after entering, is conducive to reducing carrier concentration.
(6) preparation method of oxide semiconductor thin-film of the invention to be used do not contain in the aqueous solution, and the aqueous solution and appointed What organic matter, so not only environmental protection, can also reduce carbon residual, reduce annealing temperature.
Brief description of the drawings
Using accompanying drawing, the present invention is further illustrated, but content in accompanying drawing is not constituted to any limit of the invention System.
Fig. 1 is the X-ray diffractogram of the film of the different x contents prepared by the embodiment of the present invention 2.
Fig. 2 is the transfer characteristic curve of the thin film transistor (TFT) of the different x contents prepared by the embodiment of the present invention 2.
Fig. 3 is the bias stability figure of the thin film transistor (TFT) of the different x contents prepared by the embodiment of the present invention 2.
Fig. 4 is the X-ray diffractogram of the different film prepared by the embodiment of the present invention 3.
Fig. 5 is the transfer characteristic curve of the thin film transistor (TFT) that the embodiment of the present invention 3 is based on different Sc contents x.
Fig. 6 is the bias stability of the thin film transistor (TFT) that the embodiment of the present invention 3 is based on different Sc contents x.
Fig. 7 is the x-ray photoelectron energy spectrum diagram of the different Sc contents prepared by the embodiment of the present invention 3.
Specific embodiment
The invention will be further described with the following Examples.
Embodiment 1.
A kind of preparation technology of oxide semiconductor thin-film, thin composition is M2xIn2-2xO3-δAnd in composition include Zn and Sn, wherein M are III B races element in the periodic table of elements, 0.001≤x≤0.3,0≤δ < 3, using In salt and the aqueous solution of M salt It is hydrolyzed reaction as precursor solution, then film forming is carried out to the solution after hydrolysis, 300 is not higher than in temperature after film forming Annealing is prepared under conditions of degree Celsius.
III B races element is in Sc, Y, Ac, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu A kind of element of or any two or more combinations.Preferably Nd or Sc, more preferably Sc.
The solute of the aqueous solution is the one kind in nitrate, chloride, hydroxide or perchlorate.The solute of the aqueous solution To include nitrate and perchlorate performance more preferably simultaneously.
The solute of the aqueous solution can also be at least two materials in nitrate, chloride, hydroxide;Or the aqueous solution Solute be at least two materials in perchlorate, chloride, hydroxide.
It is preferred that, not carbon elements in the aqueous solution.Any organic matter is not contained in the aqueous solution, so not only environmental protection, can be with Reduce carbon residual, reduce annealing temperature.
M2xIn2-2xO3-δPreparation be specifically it is molten as presoma with the aqueous solution of indium nitrate, villaumite indium or perchloric acid indium Liquid and with the one kind in Sc, Y, Ac, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu or any two The aqueous solution of the nitrate, villaumite or perchlorate of the element of kind of the above is hydrolyzed reaction for precursor solution.Specifically adopt With the method film forming of drop coating, spin coating, blade coating, spraying or printing.
During precursor solution selection villaumite, coordinate ultraviolet light or corona treatment, and annealed, annealing temperature is small In 200 degrees Celsius.The atmosphere gas of annealing are air or inert gas.
The prepared oxide semiconductor thin-film composition of the preparation method of the oxide semiconductor thin-film includes unit of III B races Do not include Zn and Sn in element and In, and composition, be with In2O3It is the semiconductive thin film that matrix material is prepared from, matrix material is The material of main component is accounted in finger compound.The carrier concentration of the oxide semiconductor thin-film is less than 5 × 1019cm-3, current-carrying Sub- concentration is preferably smaller than 1017cm-3
The radius of the radius ratio Zn atoms of In atoms is big, and its 5s track can be overlapped, with electron mobility higher, while Even if In atoms also have the important performance also to form electron channel in noncrystalline state.Therefore In2O3Electrology characteristic pair The degree relative insensitivity of its crystallization, therefore the uniformity of electric property can be improved.
The oxide semiconductor materials such as IZO, IGZO of the prior art are doped by matrix material of ZnO, due to In Or the outer layer valence electron of Ga is more than Zn, as the Zn in In or Ga substitutions part ZnO, it may appear that valence electron more than needed so that material The carrier concentration of material is big, even if still there is larger carrier concentration when Lacking oxygen is less.
From In unlike IZO, IGZO2O3It is to be adulterated by Lacking oxygen or surface state, as long as therefore reduction oxygen is empty Position can be achieved with the control to its carrier concentration.The ionic element compared with strong (electronegativity is low) of selection mixes In2O3Can increase M-O bond energys (M is metal ion), enhancing reduces Lacking oxygen defect to the attraction of oxygen.Simultaneously because In ions are trivalents, institute The valence electron of surplus will not be produced with the element for mixing III race.Therefore, the element of III B races can simultaneously meet above-mentioned condition.
Due to being mixed with ionic III extremely strong B races element, with less Lacking oxygen, can effectively control carrier dense Degree, so as to reduce electrical conductivity, shows characteristic of semiconductor.Additionally, oxide semiconductor material of the invention is due to its Lacking oxygen It is few, it is difficult to be further incorporated into water, oxygen in air, therefore the oxide semiconductor material is insensitive to the water in air, oxygen.
It is demonstrated experimentally that the film prepared by the preparation method based on oxide semiconductor of the invention is protected for non-passivation layer The hysteresis effect just swept and the transfer characteristic curve of flyback between of the thin film transistor (TFT) of shield is smaller;Meanwhile, it is to passivation layer material Material is insensitive, directly can be passivated using polymer or photoresist insulating materials, can reduce process costs.
Because Lacking oxygen is few, the after annealing temperature of preparation method of the invention is relatively low, can be compatible with flexible substrate;And Being annealed under nitrogen or inert gas atmosphere can still keep characteristic of semiconductor, show stability and anti-attenuation higher.
Additionally, compared to ZnO, In2O3With broader band gap, its band gap about 3.6eV, after III B races element is mixed, its Band-gap energy further obtains broadening, can increase photopermeability, is suitable for Transparence Display, while can also reduce the suction of ultraviolet region Receive, increase photostability.
It should be noted that the composition of the oxide semiconductor thin-film prepared by the present invention is not limited solely to complete chemistry Measure the situation of matching, such as In2O3In O and In ratio (O/In) can be less than 3/2, correspond to the situation containing Lacking oxygen.Cause This, the chemical formula of the oxide semiconductor thin-film composition is expressed as M2xIn2-2xO3-δ, wherein M be 3B races element, 0.001≤x≤ 0.3,0≤δ < 3.
It should be noted that in this manual also can be by the chemical formula of the oxide of non-fully stoichiometric match with complete The chemical formula of full chemistry metering matching is stated, such as In2Oδ(0 < δ < 3) can be collectively referred to as In2O3
The preparation method annealing temperature of oxide semiconductor thin-film of the invention is controllable to be less than 230 degrees Celsius.
Can mutually be replaced between film metal ion prepared by the preparation method of oxide semiconductor thin-film of the invention Position and shared oxygen, it is also possible to there is the mixed crystal of different metal oxides.Oxide semiconductor thin-film of the invention can be monocrystalline, The state of polycrystalline, crystallite or amorphous.
The preparation method of oxide semiconductor thin-film of the invention, is used as the system of the channel layer of thin film transistor (TFT) It is standby, it is mainly used in the active matrix driving of organic light emitting display, liquid crystal display or Electronic Paper, it is also possible to for integrated circuit.
Embodiment 2.
A kind of preparation method of oxide semiconductor thin-film, the chemical formula of the oxide semiconductor thin-film composition is expressed as Nd2xIn2-2xO3-δ, x selection 0.02,0.05 and 0.1 3 kind.Precursor solution is passed through using inidum chloride and the aqueous solution of neodymium chloride The method film forming of spin coating, UV treatment again afterwards, then anneal 180 degrees Celsius in air atmosphere.
(x=0 represents non-impurity-doped In to the different x that accompanying drawing 1 shows prepared by the present embodiment2O3) film X-ray diffraction (XRD) figure, it can be seen that when Nd amounts less (x=0.02) is mixed, In2O3Lattice structure keep preferable, illustrate a small amount of Nd Will not heavy damage In2O3Lattice structure.But when Nd amounts more (x >=0.05) is mixed, In2O3Lattice damage it is serious, mainly It is due to Nd3+Radius it is too big, doping is too high to cause serious lattice dilatation.
Prepared film is used for the channel layer of thin film transistor (TFT), and accompanying drawing 2 shows above-mentioned based on the thin of different Nd contents x The transfer characteristic curve of film transistor (TFT), the performance parameter of TFT is listed in table one.As can be seen that the increasing of the incorporation with Nd Many, the threshold voltage of TFT illustrates that mixing Nd can suppress In to forward flow2O3Middle superfluous intrinsic carrier.Here threshold value Voltage is defined as:In the curve of the logarithm relative to grid current of drain current, when drain current just starts to be substantially increased pair The value of the grid voltage answered, all " threshold voltages " mentioned all are defined using this in this specification.Additionally, mixing TFT after Nd The reduction of device subthreshold swing, illustrates to mix the defect that Nd can be reduced in channel layer, improves stability.But mix the amount mistake of Nd Strict destruction, TFT hydraulic performance declines can be caused when many to lattice.
The Nd of table one2xIn2-2xO3-δThe performance parameter of TFT
Accompanying drawing 3 shows prepared Nd2xIn2-2xO3-δThe bias stability of TFT, it can be seen that during x=0.02, threshold value The drift value of voltage is minimum, but when Nd amounts more (x >=0.05) is mixed, stability can decline.
In sum, the thin film transistor (TFT) prepared by semiconductive thin film of the invention has that turn-off performance is good, stability The characteristics of good, preparation process is simple, strong applicability, environmental protection.
Embodiment 3.
A kind of preparation method of oxide semiconductor thin-film, the chemical formula of composition is expressed as Sc2xIn2-2xO3-δ, x selections 0.02nd, 0.05 and 0.1 3 kind.Precursor solution, by the method film forming of spin coating, is moved back using indium nitrate and the aqueous solution of scandium nitrate 230 degrees Celsius of fiery temperature.
(x=0 represents non-impurity-doped In to the different x that accompanying drawing 4 shows prepared by the present embodiment2O3) film X-ray diffraction (XRD) figure, it can be seen that hardly to In after incorporation Sc2O3Lattice structure, this is mainly due to Sc3+Radius and In3+ Radius it is close, the lattice dilatation for hardly causing.
Prepared film is used for the channel layer of thin film transistor (TFT), and accompanying drawing 5 shows above-mentioned based on the thin of different Sc contents x The transfer characteristic curve of film transistor (TFT), the performance parameter of TFT is listed in table two.As can be seen that the increasing of the incorporation with Sc Many, the threshold voltage of TFT illustrates that mixing Sc can suppress In to forward flow2O3Middle superfluous intrinsic carrier.Additionally, mixing TFT devices subthreshold swing reduction after Sc, illustrates to mix the defect that Sc can be reduced in channel layer, improves stability.
The Sc of table two2xIn2-2xO3-δThe performance parameter of TFT
Accompanying drawing 6 shows prepared Sc2xIn2-2xO3-δThe bias stability of TFT, as Sc dopings increase, TFT devices The stability of part is constantly improve, illustrates that mixing Sc can suppress Lacking oxygen, reduce defect.
Accompanying drawing 7 shows x-ray photoelectron power spectrum (XPS) figure of prepared different Sc contents, it can be seen that with Sc Doping increases, and the corresponding swarming of Lacking oxygen (530.4eV, Peak2) is persistently reduced, and illustrates that mixing Sc can effectively suppress oxygen sky Position is visible, using Sc2xIn2-2xO3-δFilm can effectively control the dense of intrinsic carrier as the thin film transistor (TFT) of channel layer Degree, adjusting threshold voltage, the characteristics of with stable performance.
In sum, the thin film transistor (TFT) prepared by semiconductive thin film of the invention has that turn-off performance is good, stability The characteristics of good, preparation process is simple, strong applicability, environmental protection.
Embodiment 4.
A kind of preparation method of oxide semiconductor thin-film, the chemical formula of composition is expressed as Sc2xIn2-2xO3-δ, x selections 0.05.Precursor solution using perchloric acid indium and the aqueous solution of scandium nitrate, by the method film forming of spin coating, take the photograph by annealing temperature 200 Family name's degree.The channel layer that prepared film is used for thin film transistor (TFT) obtains 15.7cm2V–1s–1Mobility.
In sum, the thin film transistor (TFT) prepared by semiconductive thin film of the invention has that turn-off performance is good, stability The characteristics of good, preparation process is simple, strong applicability, environmental protection.
Finally it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention rather than the present invention is protected The limitation of scope, although being explained in detail to the present invention with reference to preferred embodiment, one of ordinary skill in the art should manage Solution, technical scheme can be modified or equivalent, without deviating from technical solution of the present invention essence and Scope.

Claims (10)

1. a kind of preparation technology of oxide semiconductor thin-film, it is characterised in that:Thin film composition is M2xIn2-2xO3- δ,And without Zn And Sn, wherein M are III B races element in the periodic table of elements, 0.001≤x≤0.3,0≤δ < 3, it is characterised in that:Using In salt Be hydrolyzed reaction as precursor solution with the aqueous solution of M salt, then film forming carried out to the solution after hydrolysis, after film forming Temperature is annealed under conditions of being not higher than 300 degrees Celsius and is prepared from.
2. the preparation technology of oxide semiconductor thin-film according to claim 1, it is characterised in that:The solute of the aqueous solution is One kind in nitrate, chloride, hydroxide or perchlorate.
3. the preparation technology of oxide semiconductor thin-film according to claim 1, it is characterised in that:The solute of the aqueous solution is same When include nitrate and perchlorate.
4. the preparation technology of oxide semiconductor thin-film according to claim 1, it is characterised in that:The solute of the aqueous solution is At least two materials in nitrate, chloride, hydroxide;Or
The solute of the aqueous solution is at least two materials in perchlorate, chloride, hydroxide.
5. the preparation technology of the oxide semiconductor thin-film according to Claims 1-4 any one, it is characterised in that:Water Not carbon elements in solution.
6. the preparation technology of oxide semiconductor thin-film according to claim 5, it is characterised in that:The III B races element For the one kind in Sc, Y, Ac, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu or it is any two kinds with The element of upper combination;
M2xIn2-2xO3-δPrepare specifically with the aqueous solution of indium nitrate, villaumite indium or perchloric acid indium as precursor solution and with One kind or any two or more in Sc, Y, Ac, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu The aqueous solution of nitrate, villaumite or perchlorate of element be hydrolyzed reaction for precursor solution.
7. the preparation technology of a kind of oxide semiconductor thin-film according to claim 6, it is characterised in that:The III B races Element is Nd or Sc.
8. the preparation technology of a kind of oxide semiconductor thin-film according to claim 7, it is characterised in that:Annealing temperature is not Higher than 230 degrees Celsius.
9. the preparation technology of a kind of oxide semiconductor thin-film according to claim 8, it is characterised in that:The presoma When solution is villaumite, coordinate ultraviolet light or corona treatment, and annealed, annealing temperature is less than 200 degrees Celsius;
The atmosphere gas of annealing are air or inert gas.
10. a kind of oxide semiconductor thin-film, it is characterised in that:By the preparation work as described in claim 1 to 9 any one Skill is prepared from, for the channel layer as thin film transistor (TFT).
CN201710250474.5A 2017-04-17 2017-04-17 A kind of oxide semiconductor thin-film and its preparation technology Pending CN106927689A (en)

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Cited By (4)

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CN108461389A (en) * 2018-03-29 2018-08-28 华南理工大学 A method of improving oxide semiconductor film bias thermal stability
WO2019100487A1 (en) * 2017-11-21 2019-05-31 深圳市华星光电半导体显示技术有限公司 Back channel etching type tft substrate and method for manufacturing same
CN110718468A (en) * 2019-09-26 2020-01-21 深圳大学 Samarium-doped metal oxide thin film transistor and preparation method and application thereof
CN110718468B (en) * 2019-09-26 2022-08-02 深圳大学 Samarium-doped metal oxide thin film transistor and preparation method and application thereof

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