CN111404133A - Special protection circuit in silicon carbide diode chip - Google Patents
Special protection circuit in silicon carbide diode chip Download PDFInfo
- Publication number
- CN111404133A CN111404133A CN202010151663.9A CN202010151663A CN111404133A CN 111404133 A CN111404133 A CN 111404133A CN 202010151663 A CN202010151663 A CN 202010151663A CN 111404133 A CN111404133 A CN 111404133A
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- China
- Prior art keywords
- silicon carbide
- protection circuit
- carbide diode
- capacitor
- inductor
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
Abstract
The invention belongs to the technical field of semiconductors, and relates to a special protection circuit in a silicon carbide diode chip, which comprises a packaging shell, one or more chips which are arranged in the packaging shell and connected together in series, and leads connected to two ends of the packaging shell, wherein a silicon carbide diode and a protection circuit are arranged in each chip, the protection circuit comprises an inductor and a capacitor, and the protection circuit formed by connecting the inductor and the capacitor in series is connected with the silicon carbide diode in parallel; the protection circuit further comprises a resistor connected in parallel with the capacitor, and the capacitor and the resistor connected in parallel are connected in series with the inductor. The special protection circuit eliminates and absorbs peak high voltage and high frequency interference harmonic waves generated by the silicon carbide diode and an inductance element when the silicon carbide diode is applied in a packaging structure, thereby protecting the circuit and prolonging the service life of the silicon carbide diode; the width of the forbidden band is stably widened, the depth is improved, and parasitic harmonic waves are absorbed.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a special protection circuit in a silicon carbide diode chip.
Background
Silicon carbide is the most developed wide bandgap semiconductor material at present, has high voltage resistance compared with common silicon components, and is widely applied to switching power supplies and high-frequency rectifiers. However, when the high-voltage circuit is applied, when reverse electromotive force exists, the high-voltage circuit has the dangers of creepage, electric leakage and the like, and has larger potential safety hazard; when the diode is used, the resonant frequency is influenced due to the existence of the resistor, and the absorption depth of the diode is influenced.
When the existing silicon crystal diode is used, a safety circuit is usually connected in parallel due to limited voltage resistance, so that the circuit is protected; however, in the application of silicon carbide diodes, due to their high voltage resistance, protection circuits are not usually provided except in certain cases. The protection circuits of the two arrangements need long leads and have electromagnetic interference; the external protection circuit increases the complexity of the structure and has potential safety hazard.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: aiming at the defects, the invention provides a special protection circuit in a silicon carbide diode chip, which eliminates and absorbs peak high voltage and high frequency interference harmonic waves generated by a silicon carbide diode and an inductance element when the silicon carbide diode is applied in a packaging structure, thereby protecting the circuit and prolonging the service life of the silicon carbide diode; the width of the forbidden band is stably widened, the depth is improved, and parasitic harmonic waves are eliminated.
The technical scheme adopted by the invention for solving the technical problems is as follows: the protection circuit specially used in the silicon carbide diode chip comprises a packaging shell, one or more chips which are arranged in the packaging shell and connected in series and leads connected to two ends of the packaging shell, wherein a silicon carbide diode and a protection circuit are arranged in each chip, the protection circuit comprises an inductor and a capacitor, and the protection circuit formed by connecting the inductor and the capacitor in series is connected with the silicon carbide diode in parallel. The inductor and the capacitor are connected in series and then connected in parallel with the silicon carbide diode, parasitic harmonics in a circuit are absorbed, the forbidden band depth is further deepened, and the width of the forbidden band is stably widened; the inductor and capacitor have specificity to the specific frequency of the silicon carbide diode; the protection circuit can eliminate and absorb peak high voltage and specific frequency interference harmonic waves generated by the silicon carbide diode and an inductance element when the silicon carbide diode is applied in the packaging structure, and the service life of the silicon carbide diode is prolonged.
Further, the protection circuit further comprises a resistor connected in parallel with the capacitor, and the capacitor and the resistor connected in parallel are connected in series with the inductor. After a resistor connected with a capacitor in parallel is added in the circuit, the forbidden band width can be widened, the diode can be protected, the formed absorption loop can solve the problem of high frequency, and the resonance frequency can be changed and controlled.
Further, the inductor is a serpentine lead wire which is carved or printed on the chip. The volume of the special protection circuit in the silicon carbide diode chip can be reduced through or printing the inductor, and the miniaturization of the packaged diode is realized.
Further, when the number of the silicon carbide diodes is more than 2, the adjacent silicon carbide diodes are arranged in a common cathode mode or a common anode mode; each silicon carbide diode is respectively connected with a protection circuit in parallel, and the protection circuit is an inductor and a capacitor which are connected in series; the protection circuit comprises a resistor, and the resistor is connected in parallel with a capacitor and then connected in series with an inductor. The silicon carbide diodes are provided with the protection circuit, so that the voltage resistance is better when the silicon carbide diodes with the same number are connected in series and in parallel, and the working efficiency of used equipment is improved.
Further, when the number of the silicon carbide diodes is more than 2, the distance between the adjacent silicon carbide diodes is not less than 3mm, and the distance between the chip and the packaging shell is 0.5 mm-5 mm. The distance between the silicon carbide diodes inside is controlled, so that the silicon carbide diodes can be effectively prevented from generating electromagnetic interference when working, and the lead radiation caused by overlong length of the lead can be avoided; the distance between the control chip and the packaging shell can avoid the material waste of the packaging shell and the breakdown of the packaging shell by internal high voltage, thereby improving the protective performance of the packaged silicon carbide diode and preventing the phenomena of electric leakage and creepage.
Further, the capacitor and the resistor are of a sheet or printed structure. The capacitor and the resistor which are of a sheet or printed structure are adopted, the space inside the packaging shell is reduced, the packaging requirement is met, and the preparation of the high-voltage silicon carbide diode with smaller volume is realized.
Furthermore, the packaging shell is made of black glue, the packaging shell made of the black glue is good in heat dissipation performance and firm in bonding, and the phenomenon that the service life of the silicon carbide diode is affected due to the fact that an internal circuit generates too high heat is avoided.
The invention has the beneficial effects that:
1. the inductor and the capacitor are connected in series and then connected in parallel with the silicon carbide diode, parasitic harmonics in a circuit are absorbed, the forbidden band depth is further deepened, and the width of the forbidden band is stably widened; the inductor and capacitor have specificity to the specific frequency of the silicon carbide diode; the protection circuit can eliminate and absorb peak high voltage and high frequency interference harmonic waves generated by the silicon carbide diode and an inductance element when the silicon carbide diode is applied in the packaging structure, and the service life of the silicon carbide diode is prolonged; after a resistor connected with a capacitor in parallel is added in the circuit, the forbidden band width can be widened, the diode can be protected, the formed absorption loop can solve the problem of high frequency, and the resonance frequency can be changed and controlled.
2. The volume of the special protection circuit in the silicon carbide diode chip can be reduced by carving or printing the inductor, and the miniaturization of the packaged diode is realized.
3. The protection circuit is arranged for each silicon carbide diode, so that the voltage resistance is better when the silicon carbide diodes with the same number are connected in series and in parallel, and the working efficiency of the used equipment is improved; the distance between the silicon carbide diodes inside is controlled, so that the silicon carbide diodes can be effectively prevented from generating electromagnetic interference when working, and the phenomenon that the length of a lead is too long to generate lead parasitic radiation can be avoided; the distance between the control chip and the packaging shell can avoid the material waste of the packaging shell and the breakdown of the packaging shell by internal high voltage, thereby improving the protective performance of the packaged silicon carbide diode and preventing the phenomena of electric leakage and creepage.
4. The capacitor and the resistor with a sheet or printed structure are adopted, so that the space inside the packaging shell is further reduced, the packaging requirement is met, and the preparation of the high-voltage silicon carbide diode with smaller volume is realized; the packaging shell made of the black glue has good heat dissipation performance and is firmly bonded, so that the phenomenon that an internal circuit generates too high heat to influence the service life of the silicon carbide diode is avoided.
Drawings
The foregoing and other objects, features, and advantages of the invention will be apparent from the following detailed description taken in conjunction with the accompanying drawings.
FIG. 1 is a schematic structural view of example 1 of the present invention;
FIG. 2 is a schematic structural diagram of embodiment 2 of the present invention;
FIG. 3 is a schematic structural diagram according to embodiment 3 of the present invention;
wherein: the package comprises a package shell 1, a chip 2, a lead 3, a silicon carbide diode 4, a protection circuit 5, an inductor 51, a capacitor 52 and a resistor 53.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example 1
Referring to fig. 1, the protection circuit dedicated for the silicon carbide diode chip comprises a package shell (1), a group of chips 2 located in the package shell 1, and leads 3 connected to two ends of the package shell 1, wherein the package shell 1 is made of black glue, a silicon carbide diode 4 and a protection circuit 5 are arranged in each chip, the protection circuit 5 comprises an inductor 51 and a capacitor 52, and the protection circuit 5 formed by serially connecting the inductor 51 and the capacitor 52 is connected in parallel with the silicon carbide diode 4; the capacitor 52 and the resistor 53 have a sheet or printed structure according to the size of the internal space and the influence of heat dissipation performance; the inductor 51 may be a single lead inductor or a serpentine lead patterned, printed on the chip.
Example 2
Referring to fig. 2, the protection circuit dedicated in a silicon carbide diode chip comprises a package housing 1, a group of chips 2 located in the package housing 1, and leads 3 connected to two ends of the package housing 1, wherein the package housing 1 is made of black glue, a silicon carbide diode 4 and a protection circuit 5 are arranged in each chip, the protection circuit 5 comprises an inductor 51, a capacitor 52 and a resistor 53, and the resistor 53 is connected in parallel with the capacitor 52 and then connected in series with the inductor 51; the protection circuit 5 is connected with the silicon carbide diode 4 in parallel; the capacitor 52 and the resistor 53 have a sheet or printed structure according to the size of the internal space and the influence of heat dissipation performance; the inductor 51 may be a single lead inductor or a serpentine lead patterned, printed on the chip.
In this embodiment, the resistor 53 is connected in parallel with the capacitor 52, when the resistor 53 is added to the circuit, the bandgap can be widened, the diode can be protected, and the formed absorption loop can solve the problem of high frequency and change and control the resonant frequency.
Example 3
Referring to fig. 3, the protection circuit special for the silicon carbide diode chip comprises a package shell 1, a group of chips 2 located in the package shell 1 and leads 3 connected to two ends of the package shell 1, wherein the package shell 1 is made of black glue, two silicon carbide diodes 4 are arranged in the chips in a cathode-sharing parallel connection mode, each silicon carbide diode 4 is respectively connected with a protection circuit 5 in parallel, each protection circuit 5 comprises an inductor 51, a capacitor 52 and a resistor 53, the resistors 53 are connected with the capacitors 52 in parallel and then connected with the inductors 51 in series, the protection circuits 5 are connected with the silicon carbide diodes 4 in parallel, specifically, the silicon carbide diodes 4 comprise silicon carbide diodes D1 and silicon carbide diodes D2, the silicon carbide diodes D1 are connected with the protection circuits formed by the inductors L, the capacitors C1 and the resistors R1 in parallel, the silicon carbide diodes D2 are connected with the inductors L, the capacitors C2 and the resistors R2 in parallel, the silicon carbide diodes D1 and the silicon carbide diodes D2 are arranged in a cathode-sharing mode, the distance between the silicon carbide diodes D632 and the chip D2, the chip packaging distance between the chip 3 and the chip can be drawn according to the heat dissipation performance of the chip, and the chip can be drawn according to the chip, the chip packaging structure of the chip.
In light of the foregoing description of the preferred embodiment of the present invention, many modifications and variations will be apparent to those skilled in the art without departing from the spirit and scope of the invention. The technical scope of the present invention is not limited to the content of the specification, and must be determined according to the scope of the claims.
Claims (8)
1. The special protection circuit in the silicon carbide diode chip comprises a packaging shell (1), one or more chips (2) which are arranged in the packaging shell (1) and connected together in series and leads (3) connected to two ends of the packaging shell (1), and is characterized in that: the chip is internally provided with a silicon carbide diode (4) and a protection circuit (5), the protection circuit (5) comprises an inductor (51) and a capacitor (52), and the protection circuit (5) formed by connecting the inductor (51) and the capacitor (52) in series is connected with the silicon carbide diode (4) in parallel.
2. The silicon carbide diode die on-die dedicated protection circuit of claim 1, wherein: the protection circuit (5) further comprises a resistor (53) connected in parallel with the capacitor (52), and the capacitor (52) and the resistor (53) connected in parallel are connected in series with the inductor (51).
3. The silicon carbide diode die on-die dedicated protection circuit of claim 1, wherein: the inductor (51) is a serpentine lead which is engraved or printed on the chip (2).
4. The silicon carbide diode die on-chip dedicated protection circuit of claim 1 or 2, wherein: when the number of the silicon carbide diodes (4) is more than 2, the adjacent silicon carbide diodes (4) are arranged in a common cathode mode or in a common anode mode; each silicon carbide diode (4) is respectively connected with a protection circuit (5) in parallel, and the protection circuit (5) is an inductor (51) and a capacitor (52) which are connected in series.
5. The silicon carbide diode die on-die dedicated protection circuit of claim 4, wherein: the protection circuit (5) comprises a resistor (53), wherein the resistor (53) is connected with the capacitor (52) in parallel and then connected with the inductor (51) in series.
6. The in-package protected silicon carbide diode of claim 2, wherein: when carborundum diode (4) are greater than 2, distance is not less than 3mm between adjacent carborundum diode (4), the distance between chip (2) and encapsulation shell (1) is 0.5 mm-5 mm.
7. The in-package protected silicon carbide diode of claim 1, wherein: the capacitor (52) and the resistor (53) are of sheet or printed structure.
8. The in-package protected silicon carbide diode of claim 1, wherein: the packaging shell (1) is made of black glue.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010151663.9A CN111404133A (en) | 2020-03-06 | 2020-03-06 | Special protection circuit in silicon carbide diode chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010151663.9A CN111404133A (en) | 2020-03-06 | 2020-03-06 | Special protection circuit in silicon carbide diode chip |
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| Publication Number | Publication Date |
|---|---|
| CN111404133A true CN111404133A (en) | 2020-07-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010151663.9A Pending CN111404133A (en) | 2020-03-06 | 2020-03-06 | Special protection circuit in silicon carbide diode chip |
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| Country | Link |
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| CN (1) | CN111404133A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113805044A (en) * | 2021-11-16 | 2021-12-17 | 北京智芯微电子科技有限公司 | Chip reliability assessment method and device and chip |
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| JP2010205997A (en) * | 2009-03-04 | 2010-09-16 | Nissan Motor Co Ltd | Semiconductor device |
| CN101860028A (en) * | 2010-03-31 | 2010-10-13 | 江传喜 | Electric heating intelligent energy-saving electric appliance |
| CN103926545A (en) * | 2013-01-10 | 2014-07-16 | 西门子(深圳)磁共振有限公司 | Transmit antenna selector and magnetic resonance imaging system |
| CN109245550A (en) * | 2018-11-22 | 2019-01-18 | 深圳英飞源技术有限公司 | Reduce three electrical level Bidirectional DC-DC Converters of power switch tube Reverse recovery freewheel current |
-
2020
- 2020-03-06 CN CN202010151663.9A patent/CN111404133A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010205997A (en) * | 2009-03-04 | 2010-09-16 | Nissan Motor Co Ltd | Semiconductor device |
| CN101860028A (en) * | 2010-03-31 | 2010-10-13 | 江传喜 | Electric heating intelligent energy-saving electric appliance |
| CN103926545A (en) * | 2013-01-10 | 2014-07-16 | 西门子(深圳)磁共振有限公司 | Transmit antenna selector and magnetic resonance imaging system |
| CN109245550A (en) * | 2018-11-22 | 2019-01-18 | 深圳英飞源技术有限公司 | Reduce three electrical level Bidirectional DC-DC Converters of power switch tube Reverse recovery freewheel current |
Non-Patent Citations (1)
| Title |
|---|
| 邮电函授教材编写组: "《电子电路基础》", 31 May 1980, pages: 468 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113805044A (en) * | 2021-11-16 | 2021-12-17 | 北京智芯微电子科技有限公司 | Chip reliability assessment method and device and chip |
| CN113805044B (en) * | 2021-11-16 | 2022-03-08 | 北京智芯微电子科技有限公司 | Chip reliability assessment method and device and chip |
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Application publication date: 20200710 |
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| RJ01 | Rejection of invention patent application after publication |