CN111384247B - Quantum dot light-emitting diode and preparation method thereof - Google Patents
Quantum dot light-emitting diode and preparation method thereof Download PDFInfo
- Publication number
- CN111384247B CN111384247B CN201811608046.6A CN201811608046A CN111384247B CN 111384247 B CN111384247 B CN 111384247B CN 201811608046 A CN201811608046 A CN 201811608046A CN 111384247 B CN111384247 B CN 111384247B
- Authority
- CN
- China
- Prior art keywords
- layer
- quantum dot
- dot light
- metal oxide
- type metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention belongs to the technical field of display, and particularly relates to a quantum dot light-emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprises an anode, a cathode and a quantum dot light-emitting layer, wherein the quantum dot light-emitting layer is positioned between the anode and the cathode, an electron transmission layer is arranged between the cathode and the quantum dot light-emitting layer, the electron transmission layer is made of n-type metal oxide, a material layer consisting of carbonate positive salt is arranged on the surface, close to the cathode, of the electron transmission layer, and the carbonate positive salt and the n-type metal oxide have the same metal elements. The device has good luminous efficiency and service life.
Description
Technical Field
The invention belongs to the technical field of display, and particularly relates to a quantum dot light-emitting diode and a preparation method thereof.
Background
Display technology has completed a qualitative leap from the early Cathode Ray Tube (CRT) to the Liquid Crystal Display (LCD) in the middle of the 80 th century of the 20 th century, Plasma Display Panel (PDP), to the Organic Light Emitting Diode (OLED) and Quantum Dot Light Emitting Diode (QLED) which are the mainstream at present.
In the structure of the existing QLED device, zinc oxide (ZnO) or barium oxide (BaO) is generally adopted as a material of an electron transmission layer, but the film forming uniformity of ZnO and BaO is difficult to guarantee, the surface roughness is large, the surface defect density is large, breakdown short circuit is easily caused when the ZnO and BaO thin film is in contact with a cathode, so that the cathode is in direct contact with a quantum dot light emitting layer, the quantum dot light emitting layer is charged to generate quantum dot fluorescence quenching, the performance of the device is reduced, and the probability of exciton recombination is greatly reduced by a ZnO/QD interface or a BaO/QD interface due to the surface defect density, so that the performance of the device is reduced, and particularly the stability and the service life of the device are influenced.
Therefore, the prior art needs to be improved.
Disclosure of Invention
The invention aims to provide a quantum dot light-emitting diode and a preparation method thereof, and aims to solve the technical problem that when an electron transmission layer is contacted with a cathode in the existing device, breakdown short circuit is easily caused due to surface defects of the electron transmission layer, so that the cathode is directly contacted with a quantum dot light-emitting layer to reduce the performance of the device.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a quantum dot light-emitting diode, which comprises an anode, a cathode and a quantum dot light-emitting layer positioned between the anode and the cathode, wherein an electron transmission layer is arranged between the cathode and the quantum dot light-emitting layer, the electron transmission layer is made of n-type metal oxide, a material layer consisting of carbonate normal salt is arranged on the surface, close to the cathode, of the electron transmission layer, and the carbonate normal salt and the n-type metal oxide have the same metal elements.
In the quantum dot light-emitting diode provided by the invention, the surface of the electron transmission layer close to the cathode is provided with the material layer consisting of the carbonate salt, and the carbonate salt and the n-type metal oxide in the electron transmission layer have the same metal elements, namely the carbonate salt is the metal carbonate corresponding to the n-type metal oxide, so that the surface of the electron transmission layer can be modified by the material layer, namely the material layer can reduce the surface defect and the roughness of the electron transmission layer, the interface defect of the electron transmission layer/the cathode is reduced, the breakdown short circuit cannot be caused, the cathode cannot be in direct contact with the quantum dot light-emitting layer, the interface defect of the electron transmission layer/the quantum dot light-emitting layer can be reduced, the probability of composite light emission of an exciton is further increased, and the luminous efficiency and the service life of the device are finally improved.
The invention also provides a preparation method of the quantum dot light-emitting diode, which comprises the following steps:
providing a substrate;
preparing a laminated material layer and an electron transport layer on the substrate;
wherein the material layer is composed of a carbonate, the electron transport layer is composed of an n-type metal oxide, and the carbonate and the n-type metal oxide have the same metal element.
The preparation method of the quantum dot light-emitting diode provided by the invention has the advantages that the process is simple, the cost is low, the adjacent material layer and the electron transmission layer are directly prepared and laminated on the substrate, the material layer can reduce the surface defect and the roughness of the electron transmission layer, the interface defect of the electron transmission layer/cathode is reduced, the breakdown short circuit is avoided, the cathode can not be in direct contact with the quantum dot light-emitting layer, the interface defect of the electron transmission layer/quantum dot light-emitting layer can be reduced, the probability of exciton recombination light-emitting is further increased, and the device finally obtained by the preparation method has good light-emitting efficiency and service life.
Drawings
Fig. 1 is a schematic structural diagram of a quantum dot light emitting diode according to an embodiment of the invention;
fig. 2 is a flowchart of a method for manufacturing a quantum dot light emitting diode according to an embodiment of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In one aspect, an embodiment of the present invention provides a quantum dot light emitting diode, including an anode, a cathode, and a quantum dot light emitting layer located between the anode and the cathode, where an electron transport layer is disposed between the cathode and the quantum dot light emitting layer, the electron transport layer is made of n-type metal oxide, and a material layer made of carbonate positive salt is disposed on a surface of the electron transport layer close to the cathode, where the carbonate positive salt and the n-type metal oxide have the same metal element.
In the quantum dot light-emitting diode provided by the embodiment of the invention, the surface of the electron transport layer close to the cathode is provided with the material layer consisting of the carbonate positive salt, and the carbonate positive salt and the n-type metal oxide in the electron transport layer have the same metal elements, namely the carbonate positive salt is the metal carbonate corresponding to the n-type metal oxide, so that the surface of the electron transport layer can be modified by the material layer, namely the material layer can reduce the surface defect and the roughness of the electron transport layer, the interface defect of the electron transport layer/cathode is reduced, the breakdown short circuit is not caused, the cathode can not be in direct contact with the quantum dot light-emitting layer, the interface defect of the electron transport layer/quantum dot light-emitting layer is reduced, the probability of composite exciton light emission is further increased, and the light-emitting efficiency and the service life of the device are finally improved.
Specifically, in an embodiment of the present invention, the n-type metal oxide is zinc oxide, and the carbonate is zinc carbonate. Or the n-type metal oxide is barium oxide, and the carbonate normal salt is barium carbonate. That is, in the embodiment of the present invention, when the electron transport layer is a zinc oxide layer, the material layer modifying the surface of the electron transport layer is a zinc carbonate layer, and when the electron transport layer is a barium oxide layer, the material layer modifying the surface of the electron transport layer is a barium carbonate layer, the zinc carbonate layer can reduce the surface defects and roughness of the zinc oxide layer, so that the interface defects of the zinc oxide layer/cathode are reduced, the cathode does not directly contact with the quantum dot light emitting layer, the interface defects of the zinc oxide/quantum dot light emitting layer are reduced, the probability of exciton light emission is increased, and the efficiency and the lifetime of the device are improved.
Specifically, in an embodiment of the present invention, the thickness of the material layer composed of the carbonate salt is 5 to 10 nm. The material layer within the thickness range can well reduce the surface defects and roughness of the electron transmission layer, and can not influence the transmission of current carriers.
Specifically, in an embodiment of the present invention, a hole function layer is disposed between the anode and the quantum dot light emitting layer; the hole function layer may be a hole injection layer and/or a hole transport layer. Further, an electron injection layer is disposed between the cathode and the material layer.
In a preferred embodiment of the present invention, a QLED device includes, stacked in sequence from bottom to top, a substrate, an anode, a hole injection layer, a hole transport layer, a quantum dot light emitting layer, an electron transport layer, a material layer, and a cathode.
Wherein the substrate is a common substrate, such as glass, a PI film and the like; the anode is made of common anode materials such as ITO, IZO and the like; the Hole Injection Layer (HIL) is a commonly used hole injection layer material, such as PEDOT: PSS, NiO, WO3Etc.; the Hole Transport Layer (HTL) is a commonly used hole transport layer material, such as TPD, poly-TPD, PVK, CBP, NPB, TCTA, TFB, etc.; the quantum dot light-emitting layer is a commonly used quantum dot material, such as one or more of II-VI compounds, III-V compounds, II-V compounds, III-VI compounds, IV-VI compounds, I-III-VI compounds, II-IV-VI compounds or IV elementary substances; the material of the Electron Transport Layer (ETL) is ZnO or BaO, and when the material of the electron transport layer is ZnO, the material of the material layer is ZnCO3When the material of the electron transport layer is BaO, the material of the material layer is BaCO3(ii) a The cathode is a common cathode material, such as Al, Ag, MgAg alloy and the like.
On the other hand, the embodiment of the invention also provides a preparation method of the quantum dot light-emitting diode, as shown in fig. 2, comprising the following steps:
s01: providing a substrate;
s02: preparing a laminated material layer and an electron transport layer on the substrate;
wherein the material layer is composed of a carbonate, the electron transport layer is composed of an n-type metal oxide, and the carbonate and the n-type metal oxide have the same metal element.
The preparation method of the quantum dot light-emitting diode provided by the embodiment of the invention has the advantages that the process is simple, the cost is low, the adjacent material layer and the electron transmission layer are directly prepared and laminated on the substrate, the material layer can reduce the surface defect and the roughness of the electron transmission layer, the interface defect of the electron transmission layer/cathode is reduced, the breakdown short circuit cannot be caused, the cathode cannot be directly contacted with the quantum dot light-emitting layer, the interface defect of the electron transmission layer/quantum dot light-emitting layer can be reduced, the exciton recombination light-emitting probability is further increased, and the device finally obtained by the preparation method has good light-emitting efficiency and service life.
The quantum dot light emitting diode has various forms, such as a positive type structure and an inverse type structure, and in some embodiments, the positive type quantum dot light emitting diode includes a bottom electrode, a quantum dot light emitting layer, an electron transport layer, and a top electrode, which are stacked from bottom to top, and in the case of the positive type quantum dot light emitting diode, the bottom electrode disposed on a substrate is an anode; in the positive type structure quantum dot light emitting diode according to the embodiment of the present invention, the substrate may include a substrate, a bottom electrode stacked on a surface of the substrate, and a hole injection layer stacked on a surface of the bottom electrode; in a positive type structure quantum dot light emitting diode according to still another embodiment of the present invention, a substrate may include a substrate, a bottom electrode stacked on a surface of the substrate, a hole injection layer stacked on a surface of the bottom electrode, and a hole transport layer stacked on a surface of the hole injection layer; in a positive type structure quantum dot light emitting diode according to still another embodiment of the present invention, a substrate may include a substrate, a bottom electrode stacked on a surface of the substrate, a hole injection layer stacked on a surface of the bottom electrode, a hole transport layer stacked on a surface of the hole injection layer, and an electron blocking layer stacked on a surface of the hole transport layer; alternatively, the substrate may include a substrate, a bottom electrode stacked on a surface of the substrate, a hole injection layer stacked on a surface of the bottom electrode, a hole transport layer stacked on a surface of the hole injection layer, an electron blocking layer stacked on a surface of the hole transport layer, and a quantum dot light emitting layer stacked on a surface of the electron blocking layer.
In a further embodiment of the present invention, the quantum dot light emitting diode with the inversion structure includes a bottom electrode, an electron transport layer, a quantum dot light emitting layer, and a top electrode, which are stacked from bottom to top, and in the case of the quantum dot light emitting diode with the inversion structure, the bottom electrode disposed on the substrate is a cathode. In the inversion-structure quantum dot light emitting diode according to one embodiment of the present invention, the base may include a substrate, a bottom electrode stacked on a surface of the substrate, and an electron injection layer stacked on the surface of the substrate.
Further, in the preparation method of the embodiment of the present invention, the cathode is disposed on the surface of the substrate, the preparation method is to prepare the quantum dot light emitting diode with the inversion structure, and the step of preparing the laminated material layer and the electron transport layer on the substrate includes:
and depositing the carbonate positive salt on the cathode to obtain the material layer, and depositing the n-type metal oxide on the area of the material layer to obtain the electron transport layer.
Further, in the preparation method of the embodiment of the present invention, the quantum dot light emitting layer is disposed on the surface of the substrate, the preparation method is to prepare a positive type quantum dot light emitting diode, and the step of preparing the stacked material layer and the electron transport layer on the substrate includes: depositing the n-type metal oxide on the quantum dot light-emitting layer to obtain the electron transport layer, and depositing the carbonate normal salt on the electron transport layer to obtain the material layer.
For the preparation of the positive type structure quantum dot light emitting diode, the step of preparing the stacked material layers and the electron transport layer on the substrate may be further: depositing the n-type metal oxide on the quantum dot light-emitting layer to obtain an n-type metal oxide layer, and annealing the n-type metal oxide layer in the atmosphere of carbon dioxide to enable the n-type metal oxide on the surface of the n-type metal oxide layer to generate carbonate positive salt to obtain the material layer, wherein the unreacted n-type metal oxide in the n-type metal oxide layer forms the electron transmission layer.
Further, in the step of annealing the n-type metal oxide layer in an atmosphere of carbon dioxide, the volume percentage of carbon dioxide is 20-40%. Under the condition of the volume percentage, a material layer consisting of carbonate normal salt with the thickness of 5-10nm can be obtained. Further, the temperature of the annealing treatment is 120-150 ℃; the time of the annealing treatment is 20-40 min. Under the temperature and time conditions, the annealing effect is better.
Specifically, when the material of the electron transport layer is ZnO, the material of the material layer is ZnCO3This can be achieved by two processes. One is to evaporate a layer of ZnCO on the surface of an electron transport layer consisting of ZnO3In addition, when the ZnO layer is spin-coated or printed, the atmosphere of the glove box body is N2With CO2The mixed inert gas of (1) and the atmosphere of the chamber during annealing of the ZnO layer is also N2With CO2Mixed inert gas of (2), when annealing, the ZnO on the surface of the ZnO layer can follow CO2Formation of ZnCO3The layer is a material layer, the ZnCO3The layer can modify the surface of unreacted ZnO, so that the film formation of ZnO is optimized, the defect density of the surface of ZnO is greatly reduced, the efficiency of the device can be improved, and the service life of the device can be prolonged. When the material of the electron transport layer is BaO, the material of the material layer is BaCO3Or can be realized by two processes, one is to evaporate a layer of BaCO on the surface of the electron transport layer consisting of BaO3Alternatively, the atmosphere in the glove box may be N when spin coating or printing the BaO layer2With CO2Mixed inert gas of (2), the box atmosphere in annealing the BaO layer is also N2With CO2Mixed inert gas of (1), BaO on the surface of BaO layer will follow CO2Formation of BaCO3The BaCO3The layer modifies the surface of unreacted BaO, optimizes the film formation of BaO, greatly reduces the defect density of the BaO surface, and can improve the efficiency and prolong the service life of the device.
In a preferred embodiment of the present invention, a method for manufacturing a QLED light emitting device includes the following steps:
(1) preparing a hole injection layer on the anode: arranging the material of the hole injection layer on the upper surface of the anode by methods such as spin coating, evaporation, ink-jet printing and the like;
(2) preparing a hole transport layer on the hole injection layer: arranging the material of the hole transport layer on the upper surface of the hole injection layer by methods such as spin coating, evaporation, ink-jet printing and the like;
(3) preparing a quantum dot light-emitting layer on the hole transport layer: arranging the quantum dot light-emitting layer material on the upper surface of the hole transport layer by methods such as spin coating, ink-jet printing and the like;
(4) preparing an electron transport layer on the quantum dot light emitting layer: arranging an electron transport layer material on the upper surface of the quantum dot light-emitting layer by methods such as spin coating, ink-jet printing and the like;
(5) preparing a material layer on the electron transport layer: arranging the material of the material layer on the upper surface of the electron transport layer by spin coating, evaporation, ink-jet printing, or annealing the material of the electron transport layer in the preparation of the electron transport layer in a box atmosphere of N2With CO2The electron transport layer material is made to follow CO2A chemical reaction occurs to produce the material layer.
(6) Preparing a cathode on the material layer: evaporating a cathode material on the electron transport layer;
(7) and packaging to obtain the QLED light-emitting device.
The invention is described in further detail with reference to a part of the test results, which are described in detail below with reference to specific examples.
Example 1
A structural schematic diagram of a QLED (quantum light emitting diode) light-emitting device is shown in figure 1 and comprises a substrate, an anode arranged on the substrate, a hole injection layer arranged on the anode, a hole transport layer arranged on the hole injection layer, a quantum dot light-emitting layer arranged on the hole transport layer, an electron transport layer arranged on the quantum dot light-emitting layer, a material layer on the electron transport layer, a cathode arranged on the material layer and an encapsulation layer arranged between the anode and the cathode.
Wherein, the anode is made of ITO with the thickness of 150 nm;
the steps of preparing the hole injection layer on the anode are as follows: in principle, common hole-injecting materials can be used in the present embodiment, such as PEDOT: PSS, NiO,WO3PSS as a water-soluble conductive polymer is coated on an anode in a spinning mode, and the anode is annealed for 15min at 150 ℃ after being dried in vacuum to form a film, wherein the thickness of the film is 40 nm;
the step of preparing the hole transport layer on the hole injection layer is as follows: in principle, conventional hole transport materials can be used in the present embodiment, such as TPD, poly-TPD, PVK, CBP, NPB, TCTA, TFB, etc., in which TFB solution is applied by spin coating onto the hole injection layer, dried to form a film under vacuum at 230 ℃ and N2Annealing for 30min under atmosphere, with thickness of 40 nm;
the preparation method of the quantum dot light-emitting layer on the hole transport layer comprises the following steps: in principle, conventional quantum dot phosphors can be used in the present embodiment, such as one or more of group II-VI compounds, group III-V compounds, group II-V compounds, group III-VI compounds, group IV-VI compounds, group I-III-VI compounds, group II-IV-VI compounds, or group IV elements, in which CdSe/CdS/red ZnS quantum dot inks are spin-coated on the hole transport layer, vacuum-dried to form a film, and then dried at 100 deg.C and N-N2Annealing for 10min under atmosphere, with thickness of 25 nm;
the steps of preparing an electron transport layer on the quantum dot light-emitting layer and simultaneously generating a material layer on the electron transport layer through a chemical reaction are as follows: in this embodiment, the electron transport layer is made of ZnO, the ZnO ink is spin-coated on the quantum dot light emitting layer, and the atmosphere in the glove box during the spin-coating process is N2With CO2Mixed inert gas (N) of2:CO27:3), vacuum drying and film forming, then, N is carried out at 120 DEG C2With CO2Annealing for 30min under mixed atmosphere condition, and forming ZnO and CO on the surface of the electron transport layer2Fully react to generate ZnCO3Thereby forming a material layer (about 5nm), an electron transport layer and a generated material layer, namely ZnCO3The total thickness of the layers was 35 nm;
the step of preparing the cathode on the material layer is as follows: in principle, common cathode materials such as low work function metals or alloys thereof can be used in the present embodiment, such as Al, Ag, MgAg alloy, etc., in which Al is deposited on the material layer by evaporation; the thickness is 150 nm;
and packaging all functional layers between the anode and the cathode through UV frame glue and a drying sheet to obtain a complete device.
In this example, ZnO is used as the material of the electron transport layer, and N is used as the electron transport layer2With CO2Spin coating in mixed inert gas atmosphere to prepare ZnO layer, annealing in the atmosphere to make ZnO and CO on the surface of electron transport layer2By chemical reaction to form ZnCO3ZnCO formed3The layer is a material layer which can modify the surface of the electron transmission layer and reduce the surface defect and roughness of the electron transmission layer, thereby improving the efficiency and the service life of the device.
Example 2
A schematic structural diagram of a QLED light-emitting device is shown in FIG. 1, and the QLED light-emitting device comprises a substrate, an anode arranged on the substrate, a hole injection layer arranged on the anode, a hole transport layer arranged on the hole injection layer, a quantum dot light-emitting layer arranged on the hole transport layer, an electron transport layer arranged on the quantum dot light-emitting layer, a material layer arranged on the electron transport layer, a cathode arranged on the material layer, and an encapsulation layer arranged between the anode and the cathode.
In the embodiment, the anode is made of ITO (indium tin oxide) and is 150 nm;
the steps of preparing the hole injection layer on the anode are as follows: in principle, conventional hole-injecting materials can be used in the present embodiment, such as PEDOT: PSS, NiO, WO3PSS as a water-soluble conductive polymer is coated on an anode in a spinning mode, and the anode is annealed for 15min at 150 ℃ after being dried in vacuum to form a film, wherein the thickness of the film is 40 nm;
the step of preparing the hole transport layer on the hole injection layer is as follows: in principle, conventional hole transport materials can be used in the present embodiment, such as TPD, poly-TPD, PVK, CBP, NPB, TCTA, TFB, etc., in which TFB solution is applied by spin coating onto the hole injection layer, dried to form a film under vacuum at 230 ℃ and N2Annealing for 30min under atmosphere, with thickness of 40 nm;
the preparation method of the quantum dot light-emitting layer on the hole transport layer comprises the following steps: in principle, conventional quantum dot light-emitting materials can be used in the present exemplary embodiment, such as II-VI compounds, III-V compounds, II-V compounds, III-VI compounds, IV-VI compoundsOne or more of group compounds, I-III-VI compounds, II-IV-VI compounds or IV simple substances, in this embodiment, CdSe/CdS/ZnS red light quantum dot ink is spin-coated on the hole transport layer, vacuum dried to form a film, and N is performed at 100 deg.C2Annealing for 10min under atmosphere, with thickness of 25 nm;
the step of preparing the electron transmission layer on the quantum dot light-emitting layer comprises the following steps: in this embodiment, BaO is used as the material of the electron transport layer, BaO ink is spin-coated on the quantum dot light emitting layer, vacuum dried to form a film, and N is at 150 ℃2Annealing for 15min under atmosphere, with thickness of 30 nm;
the step of preparing the material layer on the electron transport layer comprises the following steps: BaCO is used in this example3Is the material of the material layer, by mixing BaCO3Evaporating on the electron transport layer BaO with a thickness of 5 nm;
the step of preparing the cathode on the material layer is as follows: in principle, common cathode materials such as low work function metals or alloys thereof can be used in the present embodiment, such as Al, Ag, MgAg alloy, etc., in which Al is deposited on the material layer by evaporation to a thickness of 150 nm;
and packaging all functional layers between the anode and the cathode through UV frame glue and a drying sheet to obtain a complete device.
In this embodiment, BaO is used as the material of the electron transport layer, and a layer of BaCO is evaporated on the surface of the electron transport layer3The surface of the electron transmission layer is modified layer by layer as an electric material, so that the surface defects and the roughness of the electron transmission layer are reduced, and the efficiency and the service life of the device are improved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. The quantum dot light-emitting diode comprises an anode, a cathode and a quantum dot light-emitting layer, wherein the quantum dot light-emitting layer is positioned between the anode and the cathode, and an electron transmission layer is arranged between the cathode and the quantum dot light-emitting layer.
2. The quantum dot light-emitting diode of claim 1, wherein the n-type metal oxide is zinc oxide and the positive carbonate is zinc carbonate.
3. The quantum dot light-emitting diode of claim 1, wherein the n-type metal oxide is barium oxide and the positive carbonate is barium carbonate.
4. The quantum dot light-emitting diode of claim 1, wherein the layer of positive carbonate salt material has a thickness of 5 to 10 nm.
5. The qd-led of any one of claims 1 to 4, wherein a hole functional layer is disposed between the anode and the qd-light emitting layer; and/or
An electron injection layer is arranged between the cathode and the material layer.
6. A preparation method of a quantum dot light-emitting diode is characterized by comprising the following steps:
providing a substrate;
preparing a laminated material layer and an electron transport layer on the substrate;
wherein the material layer is composed of a carbonate salt, the electron transport layer is composed of an n-type metal oxide, and the carbonate salt and the n-type metal oxide have the same metal element;
the material layer is positioned on the surface of the electron transport layer close to the cathode.
7. The method of claim 6, wherein the substrate surface is provided with a cathode, and the step of preparing the stacked material layer and the electron transport layer on the substrate comprises:
and depositing the carbonate positive salt on the cathode to obtain the material layer, and depositing the n-type metal oxide on the area of the material layer to obtain the electron transport layer.
8. The production method according to claim 6, wherein the substrate surface is provided with a quantum dot light-emitting layer, and the step of producing the stacked material layer and the electron transport layer on the substrate comprises: depositing the n-type metal oxide on the quantum dot light-emitting layer to obtain the electron transport layer, and depositing the carbonate normal salt on the electron transport layer to obtain the material layer.
9. The production method according to claim 6, wherein the substrate surface is provided with a quantum dot light-emitting layer, and the step of producing the stacked material layer and the electron transport layer on the substrate comprises:
depositing the n-type metal oxide on the quantum dot light-emitting layer to obtain an n-type metal oxide layer;
and annealing the n-type metal oxide layer in the atmosphere of carbon dioxide to enable the n-type metal oxide on the surface of the n-type metal oxide layer to generate carbonate positive salt to obtain the material layer, wherein the unreacted n-type metal oxide in the n-type metal oxide layer forms the electron transport layer.
10. The production method according to claim 9, wherein in the step of subjecting the n-type metal oxide layer to annealing treatment in an atmosphere of carbon dioxide,
the volume percentage of the carbon dioxide is 20-40%; and/or
The temperature of the annealing treatment is 120-150 ℃; and/or
The time of the annealing treatment is 20-40 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811608046.6A CN111384247B (en) | 2018-12-27 | 2018-12-27 | Quantum dot light-emitting diode and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811608046.6A CN111384247B (en) | 2018-12-27 | 2018-12-27 | Quantum dot light-emitting diode and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111384247A CN111384247A (en) | 2020-07-07 |
| CN111384247B true CN111384247B (en) | 2021-05-28 |
Family
ID=71220707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811608046.6A Active CN111384247B (en) | 2018-12-27 | 2018-12-27 | Quantum dot light-emitting diode and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111384247B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113130778A (en) * | 2019-12-30 | 2021-07-16 | Tcl集团股份有限公司 | Quantum dot light-emitting diode and preparation method thereof |
| CN114695734A (en) * | 2020-12-31 | 2022-07-01 | Tcl科技集团股份有限公司 | Quantum dot light-emitting diode and preparation method thereof |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1808739A (en) * | 2006-02-06 | 2006-07-26 | 友达光电股份有限公司 | Organic electroluminescence device |
| CN103579519A (en) * | 2012-07-27 | 2014-02-12 | 海洋王照明科技股份有限公司 | Organic electroluminescence device and manufacturing method thereof |
| CN103682110A (en) * | 2012-09-05 | 2014-03-26 | 海洋王照明科技股份有限公司 | Organic electroluminescence device and manufacturing method thereof |
| CN103730578A (en) * | 2012-10-11 | 2014-04-16 | 海洋王照明科技股份有限公司 | Organic electroluminescence device and manufacturing method of organic electroluminescence device |
| CN104505423A (en) * | 2014-11-18 | 2015-04-08 | 华南理工大学 | Inverted-structure CdTe nanocrystalline heterojunction high-efficiency solar cell processed by solution method, and preparation method of solar cell |
| WO2015065074A1 (en) * | 2013-11-01 | 2015-05-07 | 서울대학교 산학협력단 | Organic light emitting diode, and display device and illumination including same |
| JP2015172643A (en) * | 2014-03-11 | 2015-10-01 | 富士ゼロックス株式会社 | Electrophotographic photoreceptor, process cartridge, and image forming apparatus |
| CN105720206A (en) * | 2016-05-06 | 2016-06-29 | Tcl集团股份有限公司 | QLED device and preparation method thereof |
| WO2017039774A2 (en) * | 2015-06-11 | 2017-03-09 | University Of Florida Research Foundation, Incorporated | Monodisperse, ir-absorbing nanoparticles and related methods and devices |
| CN108137564A (en) * | 2015-10-13 | 2018-06-08 | 罗门哈斯电子材料韩国有限公司 | Organic electroluminescent compounds and the Organnic electroluminescent device for including it |
| CN108183175A (en) * | 2017-12-29 | 2018-06-19 | 上海大学 | A kind of organic electroluminescence device and preparation method thereof |
| CN108461638A (en) * | 2018-02-27 | 2018-08-28 | 上海天马有机发光显示技术有限公司 | A kind of organic electroluminescence device, preparation method and display device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200905939A (en) * | 2007-07-19 | 2009-02-01 | Univ Nat Yunlin Sci & Tech | A dye-sensitized solar cell |
-
2018
- 2018-12-27 CN CN201811608046.6A patent/CN111384247B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1808739A (en) * | 2006-02-06 | 2006-07-26 | 友达光电股份有限公司 | Organic electroluminescence device |
| CN103579519A (en) * | 2012-07-27 | 2014-02-12 | 海洋王照明科技股份有限公司 | Organic electroluminescence device and manufacturing method thereof |
| CN103682110A (en) * | 2012-09-05 | 2014-03-26 | 海洋王照明科技股份有限公司 | Organic electroluminescence device and manufacturing method thereof |
| CN103730578A (en) * | 2012-10-11 | 2014-04-16 | 海洋王照明科技股份有限公司 | Organic electroluminescence device and manufacturing method of organic electroluminescence device |
| WO2015065074A1 (en) * | 2013-11-01 | 2015-05-07 | 서울대학교 산학협력단 | Organic light emitting diode, and display device and illumination including same |
| JP2015172643A (en) * | 2014-03-11 | 2015-10-01 | 富士ゼロックス株式会社 | Electrophotographic photoreceptor, process cartridge, and image forming apparatus |
| CN104505423A (en) * | 2014-11-18 | 2015-04-08 | 华南理工大学 | Inverted-structure CdTe nanocrystalline heterojunction high-efficiency solar cell processed by solution method, and preparation method of solar cell |
| WO2017039774A2 (en) * | 2015-06-11 | 2017-03-09 | University Of Florida Research Foundation, Incorporated | Monodisperse, ir-absorbing nanoparticles and related methods and devices |
| CN108137564A (en) * | 2015-10-13 | 2018-06-08 | 罗门哈斯电子材料韩国有限公司 | Organic electroluminescent compounds and the Organnic electroluminescent device for including it |
| CN105720206A (en) * | 2016-05-06 | 2016-06-29 | Tcl集团股份有限公司 | QLED device and preparation method thereof |
| CN108183175A (en) * | 2017-12-29 | 2018-06-19 | 上海大学 | A kind of organic electroluminescence device and preparation method thereof |
| CN108461638A (en) * | 2018-02-27 | 2018-08-28 | 上海天马有机发光显示技术有限公司 | A kind of organic electroluminescence device, preparation method and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111384247A (en) | 2020-07-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4931858B2 (en) | Method for manufacturing organic electroluminescent device | |
| CN106384769B (en) | Quantum dot light-emitting diode and preparation method thereof | |
| KR20110115820A (en) | Organic electronic device with flexible transparent conductor including graphene sheet and manufacturing method thereof | |
| CN111384247B (en) | Quantum dot light-emitting diode and preparation method thereof | |
| JP6387547B2 (en) | Organic EL device and method for producing the same, and method for forming metal oxide film | |
| CN112510163A (en) | Quantum dot light-emitting diode with inverted structure and preparation method thereof | |
| CN112467058B (en) | Ternary exciplex composite material main body and OLED device preparation method thereof | |
| CN111048672B (en) | Perovskite electroluminescence-based white light LED and preparation method thereof | |
| CN112687820A (en) | QLED device, preparation method of QLED device and display device | |
| CN111244298B (en) | Light-emitting device and display | |
| CN109427978A (en) | A kind of QLED device and preparation method thereof | |
| CN112054127A (en) | Quantum dot light-emitting diode and preparation method thereof | |
| WO2022143737A1 (en) | Quantum dot light-emitting diode and preparation method therefor | |
| WO2022143566A1 (en) | Light-emitting device and preparation method therefor | |
| CN111244306A (en) | Top-emitting organic light-emitting diode unit | |
| CN114038947B (en) | Method for processing functional layer of light-emitting device and light-emitting device | |
| CN114695819A (en) | Quantum dot light-emitting diode and preparation method thereof | |
| CN113130778A (en) | Quantum dot light-emitting diode and preparation method thereof | |
| JP2003347063A (en) | Organic electroluminescent display element and manufacturing method therefor | |
| CN113972344A (en) | Light emitting diode and preparation method thereof | |
| WO2024040561A1 (en) | Light-emitting device and preparation method therefor, and display panel and display apparatus | |
| CN114267800B (en) | Quantum dot light emitting diode and preparation method thereof | |
| CN113130776B (en) | Quantum dot light-emitting diode and preparation method thereof | |
| WO2022143554A1 (en) | Light-emitting device and preparation method therefor | |
| CN111384259B (en) | Quantum dot light-emitting diode and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 516006 TCL science and technology building, No. 17, Huifeng Third Road, Zhongkai high tech Zone, Huizhou City, Guangdong Province Applicant after: TCL Technology Group Co.,Ltd. Address before: 516006 Guangdong province Huizhou Zhongkai hi tech Development Zone No. nineteen District Applicant before: TCL RESEARCH AMERICA Inc. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |