CN111383953A - 用于制造半导体装置的方法和系统 - Google Patents

用于制造半导体装置的方法和系统 Download PDF

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CN111383953A
CN111383953A CN201911195048.1A CN201911195048A CN111383953A CN 111383953 A CN111383953 A CN 111383953A CN 201911195048 A CN201911195048 A CN 201911195048A CN 111383953 A CN111383953 A CN 111383953A
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metal film
wafer
stack
laser
dies
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CN111383953B (zh
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A·M·贝利斯
C·L·贝利斯
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Micron Technology Inc
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Micron Technology Inc
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Abstract

本申请涉及用于制造半导体装置的方法和系统。一种半导体制造系统包括激光器和加热的结合尖端，且配置成在半导体组合件中结合裸片堆叠。所述半导体组合件包含晶片，所述晶片由对由所述激光器发射的射束光学透明的材料制造且配置成支撑包括多个半导体裸片的裸片堆叠。金属膜沉积于所述晶片上，且可由所述激光器发射的所述射束加热。所述加热的结合尖端将热和压力施加到所述裸片堆叠，在所述加热的结合尖端与所述金属膜之间压缩所述裸片堆叠，且当所述金属膜由从所述激光器发射的所述射束加热时，通过由所述加热的结合尖端和所述金属膜发射的热对所述堆叠中的裸片进行热结合。

Description

用于制造半导体装置的方法和系统
技术领域
本公开大体上涉及半导体装置，且确切地说，涉及用于制造半导体装置的方法和系统。
背景技术
包含存储器芯片、微处理器芯片和成像器芯片的封装半导体裸片通常包含安装在衬底上且包覆于保护性覆盖物中的半导体裸片。一种用于制造封装半导体裸片的技术为热压结合，它同时使用热和压力将组件结合在一起。然而，当对裸片堆叠进行群结合时，整个裸片堆叠上的大温度梯度可导致整个堆叠上的不规则结合。举例来说，堆叠顶部附近的焊料连接可能被过度加压，而堆叠底部附近的连接可能加压不足。裸片堆叠的过度加压可能导致各种问题，包含成对的接触件之间的焊料耗尽、非导电膜从堆叠周边泄漏，以及从邻近的成对接触件泄漏的焊料所造成的不当电气短路。然而，堆叠的加压不足部分可能只是部分结合或不结合。
发明内容
本申请的一方面是针对一种半导体制造系统，其包括：激光器；半导体组合件，其包含：包括对由所述激光器发射的射束光学透明的材料的晶片，所述晶片配置成支撑包括多个半导体裸片的裸片堆叠；以及在所述裸片堆叠下方沉积于所述晶片上且能由所述激光器发射的所述射束加热的金属膜；以及配置成将热和压力施加到所述裸片堆叠的加热的结合尖端，其中所述裸片堆叠被压缩在所述加热的结合尖端与所述金属膜之间，且当所述金属膜由从所述激光器发射的所述射束加热时，所述多个半导体裸片通过由所述加热的结合尖端和所述金属膜发射的热进行热结合。
本申请的另一方面是针对一种用于对裸片堆叠进行群结合的方法，其包括：朝向沉积于承载所述裸片堆叠的晶片上的金属膜导引由激光器发射的射束，所述裸片堆叠具有与所述金属膜相邻的底侧和与所述底侧相对的顶侧，且所述金属膜在所述裸片堆叠的至少一部分下方沉积于所述晶片上且配置成将热传递到所述裸片堆叠的底部；以及使用加热的结合尖端将热和压力施加到所述裸片堆叠的所述顶侧以将所述裸片堆叠压抵到所述晶片上。
本申请的又一方面是针对一种半导体制造系统，其包括：配置成发射激光束以加热沉积于晶片上的金属膜的激光器，所述晶片支撑包含多个半导体裸片的裸片堆叠，且所述金属膜在所述裸片堆叠的至少一部分下方沉积于所述晶片上；以及加热的结合尖端，其与所述激光器间隔开且配置成将热和压力施加到所述裸片堆叠的顶部以结合所述裸片堆叠中的所述多个半导体裸片。
附图说明
图1示出了半导体制造系统的实施例。
图2A示出了具有连续金属膜的载体晶片的示例俯视图。
图2B到2C示出了具有图案化金属膜的载体晶片的示例视图。
图3A到3D示出了用于结合裸片堆叠的示例过程。
具体实施方式
下文描述在热压结合(TCB)期间将热施加到裸片堆叠的顶侧和底侧两者的半导体制造系统的若干实施例的特定细节和相关联的系统和方法。相关领域的技术人员将认识到，本文中所描述的方法的合适阶段可在晶片级或在裸片级执行。因此，取决于其使用情境，术语“衬底”可以指晶片级衬底或经单分的裸片级衬底。此外，除非上下文另有指示，否则可使用常规的半导体制造技术来形成本文中所公开的结构。举例来说，材料可使用化学气相沉积、物理气相沉积、原子层沉积、旋涂及/或其它合适的技术沉积。类似地，例如，可使用等离子刻蚀、湿式刻蚀、化学-机械平坦化或其它合适的技术来去除材料。相关领域的技术人员还将理解，本技术可具有额外实施例，并且所述技术可在没有上文参考图1到3描述的实施例的若干细节的情况下实践。
在下文描述的若干实施例中，半导体制造系统包含加热的结合尖端和激光器。激光器发射的射束用以加热在裸片堆叠下方沉积于晶片上的金属膜，同时加热的结合尖端将热和压力施加到裸片堆叠的顶部。因此，在受压的同时，裸片堆叠被从两个方向加热，从而降低整个堆叠上的温度梯度并且确保整个堆叠上的更均匀结合。
在一些实施例中，半导体制造系统包含激光器、半导体组合件和加热的结合尖端。半导体组合件包含晶片，所述晶片包括对激光器发射的射束光学透明的材料，其中晶片配置成支撑包括多个半导体裸片的裸片堆叠。金属膜在裸片堆叠下方沉积于晶片上，且可由激光器发射的射束加热。加热的结合尖端配置成将热和压力施加到裸片堆叠，且裸片堆叠被压缩在加热的结合尖端与金属膜之间。当金属膜由从激光器发射的射束加热时，多个半导体裸片通过由加热的结合尖端和金属膜发射的热进行热结合。
在一些实施例中，一种用于对裸片堆叠进行群结合的方法包括朝向沉积于承载裸片堆叠的晶片上的金属膜导引由激光器发射的射束，裸片堆叠具有与金属膜相邻的底侧和与底侧相对的顶侧，且金属膜在裸片堆叠的至少一部分下方沉积于晶片上且配置成将热传递到裸片堆叠的底部。所述方法进一步包括使用加热的结合尖端将热和压力施加到裸片堆叠的顶侧以将裸片堆叠压抵到晶片上。
在一些实施例中，一种半导体制造系统包括激光器和加热的结合尖端。激光器配置成发射激光束以加热沉积于晶片上的金属膜，晶片支撑包含多个半导体裸片的裸片堆叠，且金属膜在裸片堆叠的至少一部分下方沉积于晶片上。加热的结合尖端与激光器间隔开且配置成将热和压力施加到裸片堆叠的顶部以结合裸片堆叠中的多个半导体裸片。
如本文中所使用，术语“竖直”、“橫向”、“上部”及“下部”可以鉴于图中示出的定向而指代半导体装置中的特征的相对方向或位置。举例来说，“上部”或“最上部”可以指比另一特征更接近页面的顶部定位的特征。然而，这些术语应广泛地理解为包含具有其它定向的半导体装置，所述定向例如倒置或倾斜定向，其中顶部/底部、上方/下方、之上/之下、向上/向下以及左方/右方可取决于定向而互换。
图1示出了根据一个实施例的半导体制造系统100的实施例。如图1所示，半导体制造系统100可包含彼此间隔开的结合尖端110和激光器120。半导体组合件150可放置在结合尖端110与激光器120之间且由结合尖端110和由激光器120发射的射束125进行结合。
半导体组合件150包括载体晶片130和一或多个裸片堆叠140。可由玻璃或半导体(例如硅或砷化镓)构成的载体晶片130支撑一或多个裸片堆叠140。
每个裸片堆叠140可包含多个堆叠裸片144、多个互连件146和粘合剂148。裸片144可包含多种类型的半导体裸片中的任一种，例如存储器裸片(例如，动态随机存取存储器(DRAM)装置、NAND快闪存储器装置、静态随机存取存储器(SRAM)装置或“或非”存储器装置)、处理器、逻辑裸片、互补金属氧化物半导体(CMOS)图像传感器或包括例如处理器、逻辑和存储器等多个装置的芯片上系统。裸片堆叠140中的每个裸片144可为相同类型的裸片，或裸片堆叠140可各自包含两种或更多种类型的裸片。粘合剂148将邻近裸片144彼此附接，且包括例如未固化或部分固化的底部填充材料。
一或多个互连件146在堆叠140中的裸片144之间竖直地延伸，且以电子方式耦合裸片144。裸片堆叠140可包含数量比图1所示更少或更多的互连件146。举例来说，裸片堆叠140可包含排列在半导体裸片之间的数十个、数百个、数千个或更多的互连件146。结合材料(图中未示)可以将每个互连件146结合到裸片144或另一互连件。包括例如焊料、锡-银或另一结合材料的结合材料可由半导体制造系统100加热和压缩以形成裸片144之间的电气和/或机械连接。举例来说，互连件146中的一些可以不具有电活性，且可以为裸片堆叠140提供结构支撑，而其它互连件146可以具有电活性，且提供在邻近裸片144之间的导电路径。
裸片堆叠140可以形成于晶片或衬底136上，所述晶片或衬底又可以由粘合剂层134附接到载体晶片130。粘合剂层134可包括与粘合剂148相同的材料或不同材料。晶片136可以在结合裸片堆叠140之后从载体晶片130中卸除。
金属膜132可以沉积于载体晶片130的顶侧上。金属膜132可包括导热材料，例如钛、铜、钨或其他材料或可以粘附于载体晶片130的材料的组合。金属膜132可以通过任何合适的沉积技术沉积于载体晶片130上。在各种实施例中，可以通过湿式或干式蚀刻在沉积膜中形成图案，以例如分离膜132的若干片段。在裸片堆叠140组装于晶片130上之前，膜132可以沉积于载体晶片130上，并且任选地图案化。
结合尖端110将热和压力施加到裸片堆叠140以结合裸片144。结合尖端110可包括能够承受高压和高温且能够将热传送到裸片堆叠140的材料。这样一个材料可以是金属，但也可以使用例如陶瓷、半导体或其组合等各种材料中的任一种来构造结合尖端110。
结合尖端110可以被致动以将裸片堆叠140压抵到载体晶片130上，以便于结合裸片144。热源(图中未示)提供能量以加热结合尖端110，且结合尖端110可以在压抵堆叠时将热传递到裸片堆叠140。结合尖端110在所述尖端面向半导体组合件150的一侧具有表面112。表面112可以是平坦的，且大体上平行于载体晶片130的平面表面。如图1所示，结合尖端110的表面112可具有约等于一个裸片堆叠140的顶表面面积的大小。然而，在其它实施例中，表面112可具有不同表面积。举例来说，表面112可具有约等于多个裸片堆叠140的顶表面面积的大小，使得结合尖端110能够同时压缩多个堆叠140。或者，表面112可具有小于裸片堆叠140的顶表面面积的大小，且可以使用多个结合尖端110来压缩每个堆叠140。
当半导体组合件放置在制造系统100中时，激光器120将激光束125直接发射到载体晶片130的底侧。可以选择由激光器120发射的激光束125的波长，使得载体晶片130对激光束125光学透明，且晶片130上的金属膜132可以吸收射束的能量。举例来说，如果载体晶片130是硅晶片，那么激光器120可以发射红外射束125。如果载体晶片130是玻璃，那么激光器120可以发射处于可见光光谱内的射束125。
由激光束125生成的热可以由金属膜132吸收，从而在裸片堆叠140的底侧产生局部热源。当裸片堆叠140通过结合尖端110压抵到载体晶片130上时，加热的金属膜132可以将热传递到裸片堆叠140的底部。将热施加到裸片堆叠140的顶侧和底侧两者可以减小整个堆叠上的温度梯度，从而改进裸片144的结合。
图1示出在一些实施例中，金属膜132可包括横跨载体晶片130的整个顶表面分布的连续薄片。图2A示出了具有连续金属膜132的载体晶片130的示例俯视图。然而，在其它实施例中，金属膜132可以横跨载体晶片130的一部分沉积或以具有不连续膜片段的图案沉积。图2B是示出图案化金属膜132的示例的俯视图，且图2C是图2B中示出的金属膜132的实施例的侧视图。图案化膜132的片段可以物理上彼此分隔开间隙202。间隙202也可以热隔离金属膜132的片段(或降低片段之间的热传递)，使得半导体制造系统100能够将热局部地施加到裸片堆叠140，同时对邻近的裸片堆叠施加极少的热或不施加到。此外，金属膜132的物理上隔离的片段可以降低由金属膜132和晶片130的不同材料特性引起的跨越整个载体晶片130的机械应力。在一些实施例中，间隙202与裸片堆叠140之间的裸片街区大体上对准。
如图2C中所示，图案化金属膜132的片段可具有约等同于每个裸片堆叠140的宽度的宽度。第一裸片堆叠140可具有宽度W1，而金属膜132的第一片段可具有宽度W2。在一些实施例中，宽度W2大于宽度W1，但小到足以在金属膜132的第一片段与第二片段之间留下间隙202。类似地，金属膜132的第一片段的深度(垂直于图2C中示出的视角)可以大于裸片堆叠140的深度，同时在第一片段与第二片段之间保持一间隙。当第一片段宽度W2大于裸片堆叠宽度W1时，金属膜132的第一片段可以阻挡激光束125，不让其接触裸片堆叠140并损坏裸片144的敏感组件。
载体晶片130可具有除图2A到2C中所示的那些配置之外的金属膜132的配置，且金属膜132的片段可以是各种大小中的任一大小。举例来说，金属膜132的每一片段可具有约等同于每个互连件146的大小的大小，且可以为每个互连件146提供一个膜片段132。在其它情况下，金属膜132的片段约为若干互连件146的大小，但小于裸片堆叠140，或所述片段可具有约等同于多个裸片堆叠140的大小的大小。
图3A到3D示出了用于使用半导体制造系统100结合裸片堆叠140的过程的一个实施例。示出了关于具有图案化金属膜132的载体晶片130的过程。然而，类似的过程可以用于连续的或以不同于图3A到3D中所示的方式图案化的金属膜132的实施例。
如图3A中所示，结合尖端110和激光器120可以与第一裸片堆叠140A对准。图3B示出激光器120可以开启以朝向裸片堆叠140A下方的金属膜132发射射束125，且结合尖端110可以被致动以压缩堆叠140A。结合尖端110可以压缩堆叠140A并持续规定时间量，确定所述持续时间从而实现裸片144的结合。
一旦已经结合第一堆叠140A，结合尖端110和激光器120便可以重新定位以与第二裸片堆叠140B对准。图3C示出半导体组合件150可以水平地移位以使结合尖端110和激光器120与堆叠140B对准。然而，在其它实施例中，结合尖端110和激光器120可以移动以与堆叠140B对准。在一些实施例中，在激光器120相对于半导体组合件150移动时，激光器120可能被关闭，或其射束被阻挡，从而减小激光束125将穿过金属膜片段之间的间隙202进入裸片堆叠140的敏感组件中的可能性。
在结合尖端110和激光器120已与第二裸片堆叠140B对准(如图3D中所示)之后，激光器120可以开启以朝向第二堆叠140B下方的金属膜132发射射束125，且结合尖端110可以被致动以压缩堆叠140B。结合尖端110可以压缩堆叠140B且持续时间量与压缩第一堆叠140A的时间量相同，或者持续的时间量不同(例如，在第二堆叠140B含有不同数目个裸片144或不同组件从而需要额外或较少时间来形成结合的情况下)。
半导体制造系统100可以迭代图3A到3D中所示的步骤，直到晶片130上的所有裸片堆叠140全部结合为止。在一些实施例中，具有金属膜132的载体晶片130可以重复用来对一组新的裸片堆叠140执行结合过程。
根据前文应了解，出于说明的目的，本文中已描述了本发明的特定实施例，但可以在不偏离本发明的范围的情况下进行各种修改。因此，本发明除了受限于所附权利要求书之外不受其它限制。

Claims (20)

1.一种半导体制造系统，其包括：
激光器；
半导体组合件，其包含：
包括对由所述激光器发射的射束光学透明的材料的晶片，所述晶片配置成支撑包括多个半导体裸片的裸片堆叠；以及
在所述裸片堆叠下方沉积于所述晶片上且能由所述激光器发射的所述射束加热的金属膜；以及
配置成将热和压力施加到所述裸片堆叠的加热的结合尖端，其中所述裸片堆叠被压缩在所述加热的结合尖端与所述金属膜之间，且当所述金属膜由从所述激光器发射的所述射束加热时，所述多个半导体裸片通过由所述加热的结合尖端和所述金属膜发射的热进行热结合。
2.根据权利要求1所述的半导体制造系统，其中所述金属膜包括在所述晶片的表面上的连续薄片。
3.根据权利要求1所述的半导体制造系统，其中所述金属膜包括在所述晶片的表面上的多个不连续片段。
4.根据权利要求3所述的半导体制造系统，其中所述金属膜的每一片段具有约等于所述裸片堆叠的宽度的宽度。
5.根据权利要求3所述的半导体制造系统，其中所述金属膜的每一片段具有大于所述裸片堆叠的宽度的宽度。
6.根据权利要求3所述的半导体制造系统，其中所述金属膜的每一片段具有小于所述裸片堆叠的宽度的宽度。
7.根据权利要求1所述的半导体制造系统，其中所述晶片包括硅，且其中由所述激光器发射的所述射束是红外射束。
8.一种用于对裸片堆叠进行群结合的方法，其包括：
朝向沉积于承载所述裸片堆叠的晶片上的金属膜导引由激光器发射的射束，所述裸片堆叠具有与所述金属膜相邻的底侧和与所述底侧相对的顶侧，且所述金属膜在所述裸片堆叠的至少一部分下方沉积于所述晶片上且配置成将热传递到所述裸片堆叠的底部；以及
使用加热的结合尖端将热和压力施加到所述裸片堆叠的所述顶侧以将所述裸片堆叠压抵到所述晶片上。
9.根据权利要求8所述的方法，其进一步包括：
相对于所述晶片移动所述激光器和结合尖端；
朝向在第二裸片堆叠的至少一部分下方沉积于所述晶片上的金属膜导引由所述激光器发射的所述射束；以及
使用所述加热的结合尖端将热和压力施加到所述第二裸片堆叠的顶侧以将所述第二裸片堆叠压抵到所述晶片上。
10.根据权利要求9所述的方法，其进一步包括在相对于所述晶片移动所述激光器和所述结合尖端之前转动所述激光器。
11.根据权利要求8所述的方法，其进一步包括：
将所述金属膜沉积于所述晶片上；以及
在沉积所述金属膜之后，将所述裸片堆叠组装于所述晶片上。
12.根据权利要求11所述的方法，其进一步包括将图案蚀刻到所述金属膜中以产生所述金属膜的多个不连续片段。
13.根据权利要求8所述的方法，其中所述晶片包括硅，且其中由所述激光器发射的所述射束是红外射束。
14.一种半导体制造系统，其包括：
配置成发射激光束以加热沉积于晶片上的金属膜的激光器，所述晶片支撑包含多个半导体裸片的裸片堆叠，且所述金属膜在所述裸片堆叠的至少一部分下方沉积于所述晶片上；以及
加热的结合尖端，其与所述激光器间隔开且配置成将热和压力施加到所述裸片堆叠的顶部以结合所述裸片堆叠中的所述多个半导体裸片。
15.根据权利要求14所述的半导体制造系统，其中所述金属膜包括在所述晶片的表面上的连续薄片。
16.根据权利要求14所述的半导体制造系统，其中所述金属膜包括在所述晶片的表面上的多个不连续片段。
17.根据权利要求16所述的半导体制造系统，其中所述金属膜的每一片段具有约等于所述裸片堆叠的宽度的宽度。
18.根据权利要求16所述的半导体制造系统，其中所述金属膜的每一片段具有大于所述裸片堆叠的宽度的宽度。
19.根据权利要求16所述的半导体制造系统，其中所述金属膜的每一片段具有小于所述裸片堆叠的宽度的宽度。
20.根据权利要求14所述的半导体制造系统，其中所述晶片包括硅，且其中由所述激光器发射的所述射束是红外射束。
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