CN111373489A - Slurry for PERC battery and preparation method of slurry - Google Patents
Slurry for PERC battery and preparation method of slurry Download PDFInfo
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- CN111373489A CN111373489A CN201880047100.6A CN201880047100A CN111373489A CN 111373489 A CN111373489 A CN 111373489A CN 201880047100 A CN201880047100 A CN 201880047100A CN 111373489 A CN111373489 A CN 111373489A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
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- 239000012752 auxiliary agent Substances 0.000 claims description 14
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- 238000002156 mixing Methods 0.000 claims description 4
- IFPMZBBHBZQTOV-UHFFFAOYSA-N 1,3,5-trinitro-2-(2,4,6-trinitrophenyl)-4-[2,4,6-trinitro-3-(2,4,6-trinitrophenyl)phenyl]benzene Chemical compound [O-][N+](=O)C1=CC([N+](=O)[O-])=CC([N+]([O-])=O)=C1C1=C([N+]([O-])=O)C=C([N+]([O-])=O)C(C=2C(=C(C=3C(=CC(=CC=3[N+]([O-])=O)[N+]([O-])=O)[N+]([O-])=O)C(=CC=2[N+]([O-])=O)[N+]([O-])=O)[N+]([O-])=O)=C1[N+]([O-])=O IFPMZBBHBZQTOV-UHFFFAOYSA-N 0.000 claims description 3
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- 125000005210 alkyl ammonium group Chemical group 0.000 claims description 3
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims description 3
- 150000001735 carboxylic acids Chemical class 0.000 claims description 3
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- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims description 3
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- 229910021485 fumed silica Inorganic materials 0.000 claims description 3
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 claims description 3
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- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 3
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Inorganic materials O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 3
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 3
- 239000005011 phenolic resin Substances 0.000 claims description 3
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- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 3
- 239000010452 phosphate Substances 0.000 claims description 3
- 150000003013 phosphoric acid derivatives Chemical class 0.000 claims description 3
- 229920002647 polyamide Polymers 0.000 claims description 3
- 239000012798 spherical particle Substances 0.000 claims description 3
- 229940116411 terpineol Drugs 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 18
- 238000002161 passivation Methods 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 7
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- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 abstract description 5
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- 230000009471 action Effects 0.000 description 1
- DJPURDPSZFLWGC-UHFFFAOYSA-N alumanylidyneborane Chemical compound [Al]#B DJPURDPSZFLWGC-UHFFFAOYSA-N 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
Abstract
The invention provides a paste for a PERC battery and a preparation method of the paste, wherein the paste comprises a conductive phase, a glass phase and an organic binder, and the conductive phase comprises aluminum powder and aluminum alloy powder; the glass phase comprises glass powder and auxiliary glass powder, and the softening temperature of the auxiliary glass powder is higher than that of the glass powder. The slurry comprises: 65-73 parts by mass of aluminum powder, 3-10 parts by mass of aluminum alloy powder, 1.8-2.2 parts by mass of glass powder, 0.3-0.5 part by mass of auxiliary glass powder and 15-40 parts by mass of organic binder. The aluminum powder, the aluminum alloy powder, the glass powder, the auxiliary glass powder and the organic binder are mixed and then ground and dispersed, and the fineness of the slurry is not more than 15 mu m. The paste is suitable for the back metallization process of the PERC battery, simplifies the production process of the PERC battery, can burn through a passivation film to form stable aluminum-silicon contact, effectively controls back surface recombination, and has wide process adjustment window and stable performance.
Description
The invention relates to the field of solar cells and conductive paste, in particular to paste for a PERC cell and a preparation method of the paste.
In order to deal with the dilemma of conventional energy exhaustion required in the future, the new energy industry has received more and more attention and attention in many countries and regions in recent years. The solar cell industry is rapidly developed under the background, and the crystalline silicon solar cell is still the most important product and technology research and development direction in the industry at present. In recent years, attention has been paid to passivation of a dielectric film used for the back surface of a Cell, and a thin film deposition manufacturing technique and equipment have become more mature, and with the introduction of a laser technique, the yield of a back surface passivation type solar Cell (hereinafter, referred to as "PERC Cell") has been increasing year by year. PERC cell via passivation film (SiN)x、SiO2、Al2O3Etc.) to reduce energy loss caused by recombination occurring at the back electrode of the battery, thereby improving conversion efficiency. The double-sided PERC battery is a new focus of attention in the industry at the present stage, but the process requirement is high, and the laser process is adopted to open holes/grooves in the passivation film on the back side and then metalize the passivation film to realize ohmic contact.
It is also disclosed in the art that the same effect as laser grooving can be achieved by printing a "corrosive slurry" directly on the surface of the passivation layer and burning through the passivation layer during high temperature sintering to form the contact. However, the back electrode paste needs to be formed by secondary printing, which increases the cost. In order to reduce the process requirement and the production cost, the industry also proposes to use the co-sintering slurry to form a back electrode and burn through a passivation layer to form good ohmic contact at the same time of forming the back electrode by one-time printing. The co-sintering slurry needs to react with a corresponding passivation film in a sintering stage, needs to control back surface recombination, and needs higher process stability.
Generally, the paste is prepared by uniformly stirring conductive phase powder, glass powder and an organic binder according to a predetermined ratio. The composition and the proportion of each part of the slurry need to be optimally designed, so as to develop the slurry which has stable performance and is suitable for the back metallization process of the PERC battery.
Disclosure of Invention
The invention aims to provide a paste for a PERC battery and a preparation method of the paste, which are suitable for a back metallization process of the PERC battery, can simplify the production process of the PERC battery, and have wide process adjustment window and stable performance.
In order to achieve the above object, the present invention provides a paste for a PERC battery, comprising a conductive phase, a glass phase and an organic binder, wherein the conductive phase comprises aluminum powder and aluminum alloy powder, the glass phase comprises glass powder and auxiliary glass powder, and the softening temperature of the auxiliary glass powder is higher than that of the glass powder; the slurry comprises: 65-73 parts by mass of aluminum powder, 3-10 parts by mass of aluminum alloy powder, 1.8-2.2 parts by mass of glass powder, 0.3-0.5 part by mass of auxiliary glass powder and 15-40 parts by mass of organic binder.
As a further improvement of the invention, the aluminum powder and the aluminum alloy powder are both spherical particles, and the median particle size of the aluminum powder is 0.1-20 μm; the median particle size of the aluminum alloy powder is 0.5-5 μm.
As a further improvement of the invention, the glass powder comprises the following components in parts by mass: 30-90 parts of PbO and 5-25 parts of B2O32-10 parts of SiO25 to 20 parts of ZnO and 0.1 to 13 parts of MxOyWherein, said MxOyIs Na2O、CaO、K2O and Li2At least one of O.
As a further improvement of the invention, the glass powder also comprises Al2O3CuO and P2O5At least one of (1).
As a further improvement of the invention, the auxiliary glass frit comprises Bi2O3、B2O3And ZnO of which the mass composition is Bi2O3：B2O3：ZnO＝(3～7)：(1.5～2.5):1。
As a further improvement of the invention, the auxiliary glass powder also comprises SiO2、Al2O3、CuO、TiO2、Cr2O3、NiO、Li2O and MnO2In (1)One or more of them.
As a further improvement of the invention, the median particle size of the glass powder is 0.5-5 μm; the median particle size of the auxiliary glass powder is 0.5-5 μm.
As a further improvement of the invention, the organic binder comprises organic resin, organic solvent and organic auxiliary agent; the organic resin is selected from one or more of ethyl cellulose, butyl acetate cellulose, phenolic resin, polyaldehyde and cellulose ether, and the mass ratio of the organic resin in the organic binder is 5-30%; the organic solvent is selected from one or more of acetone, terpineol, alcohol ester dodeca, butyl carbitol acetate, glycerol and diethylene glycol monobutyl ether, and the mass ratio of the organic solvent in the organic binder is 60-90%; the organic auxiliary agent comprises one or more of phosphate, phosphate salts, carboxylic acids and high-molecular alkyl ammonium salts, and the mass ratio of the organic auxiliary agent in the organic binder is 0.5-10%.
As a further improvement of the invention, the slurry also comprises a thixotropic agent, and the thixotropic agent comprises one or more of fumed silica, organic bentonite, modified hydrogenated castor oil, span-85 and polyamide wax.
The invention also provides a preparation method of the paste, which mainly comprises the steps of mixing the aluminum powder, the aluminum alloy powder, the glass powder, the auxiliary glass powder and the organic binder according to a set proportion, and then grinding and dispersing the mixture, wherein the fineness of the paste is not more than 15 mu m.
The invention has the beneficial effects that: the paste for the PERC battery is suitable for the back metallization process of the PERC battery, can simplify the production process of the PERC battery, does not need laser hole opening/groove or secondary printing, and has wide process adjusting window and stable performance. The slurry can form better aluminum-silicon contact after sintering, and the back surface recombination is effectively controlled; besides, the battery piece adopting the slurry has good appearance after being sintered, and has small warping and bending.
FIG. 1 is a schematic scanning electron microscope of glass powder in the paste according to the present invention;
FIG. 2 is a partial cross-sectional view of the back surface of a PERC cell made from the slurry of the present invention;
FIG. 3 is a schematic main flow diagram of a slurry preparation method of the present invention;
FIG. 4 is a schematic view of the main flow of the method for preparing glass frit from the paste according to the present invention.
The invention provides a paste for a PERC battery, which is particularly suitable for a metallization process of a back surface electrode of a double-sided PERC battery, and the paste printed on the surface of the PERC battery can be mixed with SiN in a high-temperature sintering processx、SiO2、Al2O3The film layers react and form a better ohmic contact in the corresponding area.
The paste comprises a conductive phase, a glass phase and an organic binder, wherein the conductive phase comprises aluminum powder and aluminum alloy powder, the glass phase comprises glass powder and auxiliary glass powder, and the softening temperature of the auxiliary glass powder is higher than that of the glass powder; the slurry comprises: 65-73 parts by mass of aluminum powder, 3-10 parts by mass of aluminum alloy powder, 1.8-2.2 parts by mass of glass powder, 0.3-0.5 part by mass of auxiliary glass powder and 15-40 parts by mass of organic binder.
The aluminum powder and the aluminum alloy powder are spherical particles, the median particle size of the aluminum powder is 0.1-20 microns, the preferable range of the median particle size of the aluminum powder is 0.1-3 microns, the melting point of the aluminum powder is 450-650 ℃, the preferable range of the melting point of the aluminum powder is 500-600 ℃, and the slurry can be used by matching aluminum powders with different particle sizes. The median particle size of the aluminum alloy powder is 0.5-5 μm, more preferably 2-3 μm, and the melting point of the aluminum alloy powder is 400-600 ℃. The aluminum alloy powder is preferably binary or ternary alloy powder, and specifically, the aluminum alloy powder is one or more of aluminum-boron alloy, aluminum-silicon-boron alloy, aluminum-boron-antimony alloy and aluminum-magnesium alloy. In the high-temperature sintering process, the glass phase is firstly melted, aluminum powder and aluminum alloy powder are soaked, and the molten aluminum powder is shrunk by the surface tension of the glass phase to form a densified film layer when being cooled. The aluminum powder has small particle size, low melting point and high contraction pressure, and the aluminum alloy powder can avoid aluminum thorn protrusions from being formed on the surface of the film layer. In order to further improve the current transmission performance of the slurry after sintering and reduce series resistance, part of silver powder can be added into the conductive phase, and the median particle size of the silver powder is 0.1-5 mu m.
The glass powder comprises the following components in parts by mass: 30-90 parts of PbO and 5-25 parts of B2O32-10 parts of SiO25 to 20 parts of ZnO and 0.1 to 13 parts of MxOy. Wherein M is a first main group element or a second main group element, and M isxOyIn particular Na2O、CaO、K2O and Li2At least one of O. The softening temperature of the glass powder is 280-400 ℃, and preferably, the softening temperature of the glass powder is controlled to be 280-330 ℃. The glass powder has a low melting point, can be melted in advance in the sintering and heating process to fully soak the conductive phase, and is completely settled to facilitate the wetting of the passivation film and the silicon substrate.
The median particle size of the glass powder is 0.5-5 mu m (shown in figure 1), the glass powder is in an amorphous granular shape, powder particles with larger particle sizes are preferably screened out in the actual preparation process, the possibility that the performance of the glass powder is influenced by possible crystal particles is avoided, and the quality of slurry is ensured.
SiO2And B2O3All can form a glass network structure, PbO can be connected with silicon-oxygen tetrahedron to form a special network structure, so that PbO/SiO2The composition system has a wider glass forming area and enables PbO to have better fluxing property, wherein the PbO has a relatively higher proportion, so that the crystallization can be effectively avoided, and the softening temperature of the glass powder can be reduced. B is2O3Low self-melting point, favorable for lowering softening temperature of glass powder, and inhibiting expansion coefficient of glass, B2O3And also to provide the glass with proper fluidity after melting. The ZnO component also contributes to lowering of the melting point of the glass frit and can suppress an increase in the expansion coefficient of the glass, and can be used for adjusting the fluidity of the glass after melting. Except that, MxOyCan destroy the glass melting processThe glass network structure reduces the viscosity of the glass feed liquid in a molten state, and is beneficial to uniform smelting of glass.
The glass powder also comprises Al2O3CuO and P2O5At least one of (1). Al (Al)2O3Can replace partial SiO2Increasing the chemical stability and acid resistance of the glass powder preparation process, and Al2O3Mass composition ratio is less than SiO2Half of that. P2O5The CuO can break the glass network structure, and the chemical stability of the glass powder is not influenced by the addition of a small amount of CuO.
The auxiliary glass powder comprises Bi2O3、B2O3And ZnO of which the mass composition is Bi2O3：B2O3: ZnO (3-7): (1.5-2.5) 1. The median particle size of the auxiliary glass powder is 0.5-5 mu m, the softening temperature of the auxiliary glass powder is controlled to be 380-500 ℃, further, the median particle size of the auxiliary glass powder is preferably 2-5 mu m, and the softening temperature is preferably 400-450 ℃. The softening temperature of the auxiliary glass powder is higher than that of the glass powder, so that the auxiliary glass powder and the glass powder are prevented from melting and settling together to form a thick glass layer, and the series resistance is increased.
Bi2O3As a better substitute component of PbO, the auxiliary glass powder has the functions of reducing the softening temperature of the glass powder and inhibiting the adjustment of the expansion coefficient of the glass, and can also increase the specific gravity of the auxiliary glass powder, thereby being beneficial to the uniform action of the auxiliary glass powder on a conductive phase in the slurry sintering process. Further, the auxiliary glass powder also comprises SiO2、Al2O3、CuO、TiO2、Cr2O3、NiO、Li2O and MnO2One or more of them. The glass powder and the auxiliary glass powder can be mixed according to a set proportion to obtain a corresponding glass powder composition, so that the slurry production and material management and control are facilitated.
The organic binder comprises organic resin, an organic solvent and an organic auxiliary agent, wherein the organic resin is one or more selected from ethyl cellulose, butyl acetate cellulose, phenolic resin, polyaldehyde and cellulose ether, and the mass ratio of the organic resin in the organic binder is 5-30%; the organic solvent is selected from one or more of acetone, terpineol, alcohol ester dodeca, butyl carbitol acetate, glycerol and diethylene glycol monobutyl ether, and the mass ratio of the organic solvent in the organic binder is 60-90%; the mass ratio of the organic auxiliary agent in the organic binder is 0.5-10%, and the organic auxiliary agent comprises one or more of phosphate, phosphate salts, carboxylic acids and high-molecular alkyl ammonium salts. Besides, the slurry is further adjusted and optimized in the performance of the organic binder by other auxiliary agents such as a thixotropic agent and the like, wherein the thixotropic agent comprises one or more of fumed silica, organic bentonite, modified hydrogenated castor oil, span-85 and polyamide wax.
Optimization of the organic binder helps the paste to maintain better printing performance. According to practical tests, the paste can be used for printing uniform continuous grid lines with the minimum width of 27 mu m, and the corresponding grid lines have good aspect ratio and morphological characteristics.
Here, we provide examples 1-3 below, and compare them with comparative examples, and a partial cross-sectional view of the back surface of the corresponding PERC cell of example 1 is shown in fig. 2. The comparative examples are conventional slurries, the examples 1 to 3 and the comparative examples are matched with crystalline silicon wafers of the same specification for printing and sintering to obtain corresponding double-sided PERC batteries and are subjected to electrical property tests, and the performance test comparison results of the examples 1 to 3 compared with the comparative examples are shown in the following table 1:
| serial number | [Voc(V)] | [Is(A)] | [FF(％)] | [Eff(％)] | [Rs] | [IVRV2] |
| Example 1 | High 3mV | Keep flat | Keep flat | Keep flat | Is higher than the original | Keep flat |
| Example 2 | High 3mV | Is higher than the original | Keep flat | Height of 0.2 | Keep flat | Keep flat |
| Example 3 | Low 1mV | Keep flat | Keep flat | Height of 0.1 | Is on the low side | Slightly higher |
Example 1 the slurry mass composition was: 68 parts of aluminum powder with the particle size of 2-3 mu m; 5 parts of aluminum-silicon alloy powder, wherein the particle size is also 2-3 mu m; 5 parts of silver powder with the grain diameter of about0.1 to 1 μm; 2.5 parts of glass powder, 0.5 part of auxiliary glass powder and 19 parts of organic binder. Wherein the glass powder comprises the following components in percentage by mass: b is2O3：ZnO：SiO2: CaO 55: 20: 10: 5: 10, the softening temperature of the glass powder is 290 ℃, and the median particle size is 2.7 mu m. Bi in the auxiliary glass powder2O3、B2O3And the mass ratio of ZnO is 36: 24: 13, the softening temperature of the auxiliary glass powder is 400 ℃, and the median particle size is 1.4 mu m.
Example 2 the slurry mass composition was: 65 parts of aluminum powder, wherein the aluminum powder specifically comprises two spherical powders with different particle sizes; 12.7 parts of aluminum-silicon alloy powder with the particle size of 2-3 mu m; 1.8 parts of glass powder, 0.5 part of auxiliary glass powder and 20 parts of organic binder. Wherein the glass powder comprises the following components in percentage by mass: b is2O3：ZnO：SiO2：Li2O: CaO 61: 20: 10: 3: 3: 3, the softening temperature of the glass powder is 320 ℃, and the median particle size is 3.6 mu m. Bi in the auxiliary glass powder2O3、B2O3And the mass ratio of ZnO is 36: 24: 13, the softening temperature of the auxiliary glass powder is 420 ℃, and the median particle size is 2.2 mu m.
Example 3 the slurry mass composition was: 73 parts of aluminum powder with the particle size of 2-3 mu m; 4.8 parts of aluminum-silicon-boron alloy powder with the particle size of 2-3 mu m; 2.2 parts of glass powder, 0.3 part of auxiliary glass powder and 20 parts of organic binder. Wherein the glass powder comprises the following components in percentage by mass: b is2O3：ZnO：SiO2：Na2O65: 18: 8: 3: and 6, the softening temperature of the glass powder is 310 ℃, and the median particle size is 2.4 mu m. Bi in the auxiliary glass powder2O3、B2O3And the mass ratio of ZnO is 70: 20: 10, wherein the softening temperature of the auxiliary glass powder is 390 ℃, and the median particle size is 1.8 mu m.
The invention also provides a preparation method of the slurry, which is shown in figure 3 and comprises the following steps:
weighing corresponding organic resin according to a given proportion, and gradually dissolving and dispersing the organic resin in an organic solvent;
measuring an organic auxiliary agent and other auxiliary agents, and adding the organic auxiliary agent and other auxiliary agents into an organic solvent to obtain an organic binder with uniform texture;
and then adding the aluminum powder, the aluminum alloy powder, the glass powder and the auxiliary glass powder into an organic binder according to a set proportion, mixing, and then grinding and dispersing by a three-roller machine, wherein the fineness of the slurry is not more than 15 mu m.
Referring to fig. 4, the preparation method of the glass powder and the auxiliary glass powder is as follows:
weighing raw materials, uniformly mixing the raw materials, placing the mixture into a constant-temperature drying oven, and drying for 2-5 hours, wherein the temperature of the constant-temperature drying oven is set to be 150-250 ℃;
transferring the dried raw materials into a crucible, and then placing the crucible containing the raw materials into a heating chamber to be smelted according to a set program;
cooling the smelted feed liquid by a cold roll to obtain a glass material;
and crushing and screening the glass frit to obtain glass powder.
Preferably, during smelting, the heating chamber may be charged with a protective gas, such as N2Or other inert gases to prevent the valence state of the glass frit components from changing, forming more stable compounds; the crucible adopts a platinum crucible to reduce the introduction of impurities. The set program comprises a temperature rise stage and a heat preservation stage, wherein the temperature of the heat preservation stage is set to be 950-1050 ℃, and the duration of the heat preservation stage is set to be 1-2 hours. Except this, adopt jet milling hierarchical screening system to smash and sieve the frit after the cooling to make glass powder, the supplementary glass powder that makes more even, the particle size span is little, can reduce the introduction of impurity simultaneously.
In other embodiments of the present invention, the uniformly mixed raw materials can also be directly filled into the crucible and then dried, thereby reducing intermediate operation processes. The melted feed liquid can be cooled by deionized water and then crushed by ball milling, and the detailed process is not repeated.
In summary, the glass frit has a low softening temperature and a small expansion coefficient, and the prepared paste is suitable for the back metallization process of the PERC cell. The paste can simplify the production process of the PERC battery, does not need laser drilling/grooving or secondary printing, and has wide process adjusting window and stable performance. In addition, the slurry can form better aluminum-silicon contact after being sintered, so that the back surface recombination is effectively controlled, and the electrical property is balanced; the battery piece adopting the slurry has good appearance after sintering, smaller warping and bending and better application prospect.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above-listed detailed description is only a specific description of a possible embodiment of the present invention, and they are not intended to limit the scope of the present invention, and equivalent embodiments or modifications made without departing from the technical spirit of the present invention should be included in the scope of the present invention.
Claims (10)
- The paste for the PERC battery comprises a conductive phase, a glass phase and an organic binder, and is characterized in that the conductive phase comprises aluminum powder and aluminum alloy powder, the glass phase comprises glass powder and auxiliary glass powder, the softening temperature of the auxiliary glass powder is higher than that of the glass powder, and the paste comprises: 65-73 parts by mass of aluminum powder, 3-10 parts by mass of aluminum alloy powder, 1.8-2.2 parts by mass of glass powder, 0.3-0.5 part by mass of auxiliary glass powder and 15-40 parts by mass of organic binder.
- The paste according to claim 1, wherein the aluminum powder and the aluminum alloy powder are both spherical particles, and the median particle diameter of the aluminum powder is 0.1-20 μm; the median particle size of the aluminum alloy powder is 0.5-5 μm.
- According to claimThe slurry of claim 1, wherein the glass powder comprises the following components in parts by mass: 30-90 parts of PbO and 5-25 parts of B2O32-10 parts of SiO25 to 20 parts of ZnO and 0.1 to 13 parts of MxOyWherein, said MxOyIs Na2O、CaO、K2O and Li2At least one of O.
- The paste of claim 3, wherein the glass frit further comprises Al2O3CuO and P2O5At least one of (1).
- The paste of claim 1, wherein the auxiliary glass frit comprises Bi2O3、B2O3And ZnO of which the mass composition is Bi2O3：B2O3：ZnO＝(3～7)：(1.5～2.5):1。
- The paste of claim 5, wherein the auxiliary glass frit further comprises SiO2、Al2O3、CuO、TiO2、Cr2O3、NiO、Li2O and MnO2One or more of them.
- The paste according to claim 1, wherein the glass frit has a median particle diameter of 0.5 to 5 μm; the median particle size of the auxiliary glass powder is 0.5-5 μm.
- The slurry of claim 1, wherein the organic binder comprises an organic resin, an organic solvent, and an organic auxiliary agent; the organic resin is selected from one or more of ethyl cellulose, butyl acetate cellulose, phenolic resin, polyaldehyde and cellulose ether, and the mass ratio of the organic resin in the organic binder is 5-30%; the organic solvent is selected from one or more of acetone, terpineol, alcohol ester dodeca, butyl carbitol acetate, glycerol and diethylene glycol monobutyl ether, and the mass ratio of the organic solvent in the organic binder is 60-90%; the organic auxiliary agent comprises one or more of phosphate, phosphate salts, carboxylic acids and high-molecular alkyl ammonium salts, and the mass ratio of the organic auxiliary agent in the organic binder is 0.5-10%.
- The paste of claim 1, further comprising a thixotropic agent comprising one or more of fumed silica, organobentonite, modified hydrogenated castor oil, span-85, and polyamide wax.
- A method of preparing a slurry for a PERC cell, the slurry comprising: 65-73 parts by mass of aluminum powder, 3-10 parts by mass of aluminum alloy powder, 1.8-2.2 parts by mass of glass powder, 0.3-0.5 part by mass of auxiliary glass powder and 15-40 parts by mass of organic binder, wherein the softening temperature of the auxiliary glass powder is higher than that of the glass powder; the preparation method comprises the steps of mixing the aluminum powder, the aluminum alloy powder, the glass powder, the auxiliary glass powder and the organic binder according to a set proportion, and then grinding and dispersing to ensure that the fineness of the slurry is not more than 15 mu m.
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| PCT/CN2018/098492 WO2020024253A1 (en) | 2018-08-03 | 2018-08-03 | Slurry for perc cell and method for preparing said slurry |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113976881A (en) * | 2021-11-01 | 2022-01-28 | 南通天盛新能源股份有限公司 | Preparation method of high-compaction silver-coated copper powder for synthesizing conductive paste in one pot |
| CN114822908A (en) * | 2022-04-19 | 2022-07-29 | 广州市儒兴科技股份有限公司 | Silver-aluminum paste for P + surface of TOPcon battery with high sheet resistance and preparation method thereof |
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| CN114551000B (en) * | 2022-01-28 | 2023-08-15 | 广州市儒兴科技股份有限公司 | Narrow-linewidth double-sided PERC aluminum paste and preparation method thereof |
| CN114783651A (en) * | 2022-04-14 | 2022-07-22 | 广州市儒兴科技股份有限公司 | Aluminum paste with good capability of burning through silicon nitride layer and preparation method thereof |
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- 2018-08-03 WO PCT/CN2018/098492 patent/WO2020024253A1/en active Application Filing
- 2018-08-03 DE DE112018007809.4T patent/DE112018007809T5/en not_active Withdrawn
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| CN114822908A (en) * | 2022-04-19 | 2022-07-29 | 广州市儒兴科技股份有限公司 | Silver-aluminum paste for P + surface of TOPcon battery with high sheet resistance and preparation method thereof |
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| DE112018007809T5 (en) | 2021-04-01 |
| WO2020024253A1 (en) | 2020-02-06 |
| CN111373489B (en) | 2022-07-26 |
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