CN111370366A - Double-sided display panel and manufacturing method thereof - Google Patents
Double-sided display panel and manufacturing method thereof Download PDFInfo
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- CN111370366A CN111370366A CN202010226674.9A CN202010226674A CN111370366A CN 111370366 A CN111370366 A CN 111370366A CN 202010226674 A CN202010226674 A CN 202010226674A CN 111370366 A CN111370366 A CN 111370366A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/128—Active-matrix OLED [AMOLED] displays comprising two independent displays, e.g. for emitting information from two major sides of the display
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
Abstract
The invention discloses a double-sided display panel and a manufacturing method thereof, wherein the manufacturing method comprises the following steps: manufacturing a thin film transistor on a substrate; manufacturing an insulating layer on the thin film transistor, and manufacturing a through hole communicated with the thin film transistor on the insulating layer; manufacturing a first reflecting layer on the insulating layer; manufacturing an anode on the insulating layer, wherein the anode covers the first reflecting layer; manufacturing a pixel definition layer on the anode and the insulating layer, and manufacturing a through hole communicated with the anode on the pixel definition layer; manufacturing an organic light-emitting layer in a through hole communicated with the anode on the pixel defining layer; depositing a cathode material, and forming a cathode covering the organic light-emitting layer on the pixel defining layer and the organic light-emitting layer; a second reflective layer is formed on the cathode in the organic light emitting layer region. According to the technical scheme, synchronous display and double-sided asynchronous effects of the double-sided display panel can be achieved through one substrate, and the resolution of the picture is not sacrificed.
Description
Technical Field
The invention relates to the technical field of display panels, in particular to a double-sided display panel and a manufacturing method thereof.
Background
With the popularization of flat panel display devices, it becomes possible to fabricate a double-sided display device. The double-sided display is a device capable of displaying images on two sides of a display device, has wide application fields, can be applied to communication industry, government windows, financial industry, traffic industry, airports, railway stations, subway stations and the like, and has wide development prospects.
The traditional double-sided display device is mainly characterized in that two display panels are oppositely arranged, so that one display panel can be seen from two sides respectively. Although double-sided display is achieved, the essence is that two single-sided display panels are stacked, for example, two OLEDs are packaged together by adopting a mechanical connection mode, or 2 packaged single OLEDs are bonded together, which inevitably brings the disadvantages of large occupied space, large power consumption and the like.
The double-sided display device can realize double-sided display by only one display panel, and has the advantages of thinner panel, lower power consumption and the like compared with the traditional double-sided display device, so that the double-sided display device can be applied to small electronic products.
Disclosure of Invention
Therefore, it is desirable to provide a double-sided display panel and a manufacturing method thereof, so as to solve the problem of too large display thickness of the double-sided display panel.
In order to achieve the above object, the inventor provides a method for manufacturing a double-sided display panel, comprising the following steps:
manufacturing a thin film transistor on a substrate;
manufacturing an insulating layer covering the thin film transistor on the thin film transistor, and manufacturing a through hole communicated with the thin film transistor on the insulating layer;
manufacturing a first reflecting layer on the insulating layer, wherein the first reflecting layer is connected with the thin film transistor through a through hole on the insulating layer;
depositing an anode material, and forming a transparent anode on the insulating layer, wherein the anode covers the first reflecting layer and also has a part on the insulating layer;
manufacturing a pixel definition layer on the anode and the insulating layer, and manufacturing a through hole communicated with the anode on the pixel definition layer;
manufacturing an organic light-emitting layer in a through hole communicated with the anode on the pixel defining layer;
depositing a cathode material, and forming a cathode covering the organic light-emitting layer on the pixel defining layer and the organic light-emitting layer, wherein the cathode is transparent;
and manufacturing a second reflecting layer on the cathode of the organic light emitting layer region, wherein the second reflecting layer is positioned on one side of the first reflecting layer.
Further, when a through hole communicated with the anode is manufactured on the pixel defining layer, the method also comprises the following steps:
and manufacturing two through holes communicated with the anode on the pixel definition layer, wherein the two through holes are not communicated, the bottom of one through hole is the anode on the first reflection layer, and the bottom of the other through hole is the anode on the insulating layer.
Further, before depositing the anode material, the method also comprises the following steps:
and manufacturing a window on the insulating layer on one side of the first reflecting layer, wherein the anode covers the window of the insulating layer and the first reflecting layer, and the second reflecting layer is arranged at the window.
Further, when the second reflective layer is formed on the cathode in the organic light emitting layer region, the method further includes the steps of:
and manufacturing a second reflecting layer on the cover plate, and covering one side of the cover plate with the second reflecting layer on the cathode so that the second reflecting layer is connected with the cathode.
Further, the insulating layer includes a passivation layer and a planarization layer, and the planarization layer is disposed on the passivation layer.
The inventors provide a double-sided display panel comprising:
a thin film transistor is arranged on the substrate;
an insulating layer covering the thin film transistor is arranged on the thin film transistor, and a through hole communicated with the thin film transistor is arranged on the insulating layer;
a first reflecting layer is arranged on the insulating layer and is connected with the thin film transistor through a through hole in the insulating layer;
a transparent anode is arranged on the insulating layer, the anode covers the first reflecting layer, and the anode also has a part on the insulating layer surface;
a pixel defining layer is arranged on the anode and the insulating layer, and a through hole communicated with the anode is arranged on the pixel defining layer;
an organic light emitting layer is arranged in a through hole which is communicated with the anode on the pixel defining layer;
a cathode which covers the organic light-emitting layer is arranged on the pixel defining layer and the organic light-emitting layer, and the cathode is transparent;
and a second reflecting layer is arranged on the cathode of the organic light-emitting layer region and is positioned on one side of the first reflecting layer.
Furthermore, the number of the through holes which are communicated with the anode on the pixel definition layer is two, the two through holes are not communicated, the bottom of one through hole is the anode on the first reflection layer, and the bottom of the other through hole is the anode on the insulating layer.
Further, a window is provided on the insulating layer on one side of the first reflective layer, the anode covers the window of the insulating layer and the first reflective layer, and the second reflective layer is at the window.
And the second reflecting layer is arranged on the cover plate, and one side of the cover plate with the second reflecting layer is covered on the cathode, so that the second reflecting layer is connected with the cathode.
Further, the insulating layer includes a passivation layer and a planarization layer, and the planarization layer is disposed on the passivation layer.
Different from the prior art, in the technical scheme, the first reflecting layer and the organic light emitting layer positioned on the first reflecting layer region form a top light emitting structure, the second reflecting layer and the organic light emitting layer positioned under the second reflecting layer region form a bottom light emitting structure, synchronous display and double-sided asynchronous effects of the double-sided display panel can be realized through one substrate, the manufacturing process of the double-sided display panel can be simplified, the production cost is reduced, and meanwhile, the picture resolution is not sacrificed.
Drawings
FIG. 1 is a schematic cross-sectional view illustrating a gate structure fabricated on a substrate according to an embodiment;
FIG. 2 is a schematic cross-sectional view illustrating a first insulating layer formed on a substrate according to an embodiment;
FIG. 3 is a schematic cross-sectional view illustrating an active layer formed on a substrate according to an embodiment;
FIG. 4 is a schematic cross-sectional view illustrating the source and drain formed on a substrate according to an embodiment;
FIG. 5 is a schematic cross-sectional view illustrating a second insulating layer formed on a substrate according to an embodiment of the present invention;
FIG. 6 is a schematic cross-sectional view illustrating a third insulating layer formed on a substrate according to an embodiment of the present invention;
FIG. 7 is a schematic cross-sectional view illustrating a first reflective layer formed on a substrate according to an embodiment;
FIG. 8 is a schematic cross-sectional view illustrating an anode fabricated on a substrate according to an embodiment;
FIG. 9 is a schematic cross-sectional view illustrating a pixel definition layer formed on a substrate according to an embodiment of the present invention;
FIG. 10 is a schematic cross-sectional view illustrating an organic light emitting layer formed on a substrate according to an embodiment of the present invention;
FIG. 11 is a schematic cross-sectional view illustrating a cathode fabricated on a substrate according to an embodiment;
FIG. 12 is a schematic cross-sectional view illustrating a second reflective layer formed on a substrate according to an embodiment;
FIG. 13 is a schematic diagram of a dual-sided display panel according to an embodiment of the present invention; FIG. 14 is a cross-sectional view of another embodiment of increasing the thickness of a second insulating layer on a substrate; FIG. 15 is a schematic cross-sectional view illustrating a second embodiment of fabricating two organic light emitting layers on a substrate;
FIG. 16 is a schematic cross-sectional view illustrating a third embodiment of fabricating a window on a substrate;
FIG. 17 is a schematic cross-sectional view illustrating a fourth exemplary embodiment in which a second reflective layer is disposed on a cover plate.
Description of reference numerals:
1. a substrate;
2. a gate material;
21. a first gate electrode;
22. a second gate electrode;
3. a first insulating layer;
4. an active layer material;
41. a first active layer;
42. a second active layer;
5. source and drain electrode materials;
51. a first source electrode;
52. a first drain electrode;
53. a second source electrode;
54. a second drain electrode;
6. a second insulating layer;
7. a first reflective layer;
8. an anode;
9. a pixel defining layer;
10. an organic light emitting layer;
11. a cathode;
12. a second reflective layer;
13. a third insulating layer;
14. and (7) a cover plate.
Detailed Description
To explain technical contents, structural features, and objects and effects of the technical solutions in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.
Referring to fig. 1 to 17, the present embodiment provides a method for manufacturing a dual-sided display panel, which can be manufactured on a substrate, such as glass, transparent plastic, and metal foil commonly used in the conventional manufacturing process. The manufacturing method comprises the following steps: firstly, a Thin Film Transistor (TFT) is fabricated on a substrate, where the TFT may be a top gate structure, a bottom gate structure, a BCE structure, an ESL structure (an etching stop layer is disposed on an active layer), or other structures, and the fabrication of TFTs with two BCE structures is described as an example herein; specifically, a photoresist may be coated on the substrate 1, and the photoresist may be patterned, that is, the photoresist may be exposed and developed, so that the regions where the first gate electrode and the second gate electrode of the TFT are to be formed are opened. Then, a grid material 2 is plated, which can be one or more of aluminum, molybdenum, titanium, nickel, copper, silver, chromium and other metals with excellent conductivity, and alloys. Then, a first gate 21 is formed in the region where the first gate is to be formed, a second gate 22 is formed in the region where the second gate is to be formed, and finally, the photoresist is removed. The first gate electrode 21 serves as the gate electrode of one TFT, and the second gate electrode 22 serves as the gate electrode of the other TFT.
In the case where one TFT is to be formed, only one gate electrode may be formed, and in the case where a plurality of TFTs are to be formed, a plurality of gate electrodes of the TFTs may be formed. This is also true for the source and drain of the plurality of TFTs, which will not be described in detail below.
Referring to fig. 2, in the first embodiment, after the gate is manufactured, a first insulating layer with insulating function is manufactured on the gate: specifically, an insulating material, such as nitride (silicon nitride, etc.), oxide (silicon oxide, silicon dioxide), or other insulating material, may be plated on the substrate 1, and the first insulating layer 3 may be formed on the substrate 1. The first insulating layer 3 having an insulating function covers the first gate electrode 21 and the second gate electrode 22, and can prevent the first gate electrode 21 and the second gate electrode 22 from contacting other metal electrodes.
Referring to fig. 2, in the first embodiment, in order to form a connection between two TFTs, a via hole connected to a gate electrode may be formed in a first insulating layer on the gate electrode of one TFT, and then a source electrode or a drain electrode of the other TFT may be connected to the gate electrode of one TFT through the via hole connected to the gate electrode in the first insulating layer, so that the connection between the two TFTs may be formed.
Referring to fig. 3, in the first embodiment, after the first insulating layer is formed, active layers are formed on the first insulating layer on each gate respectively; specifically, a photoresist may be coated on the substrate 1, and the photoresist may be patterned, that is, the photoresist may be exposed and developed, so that the regions where the first active layer is to be formed and the second active layer is to be formed are opened. And then plating an active layer material 4, wherein the active layer material 4 can be polysilicon, oxide semiconductor, graphene, carbon nanotube, organic semiconductor, and the like, forming a first active layer 41 on the first insulating layer 3 above the first gate electrode 21, forming a second active layer 42 on the first insulating layer 3 above the second gate electrode 21, and removing photoresist after the first active layer 41 and the second active layer 42 are manufactured.
Referring to fig. 4, in the first embodiment, after the active layer is fabricated, the first source electrode and the first drain electrode of one TFT and the second source electrode and the second drain electrode of another TFT are fabricated at the same time; specifically, a photoresist may be coated on the substrate 1, and the photoresist may be patterned, that is, the photoresist may be exposed and developed, so that the regions where the first source electrode to be manufactured, the first drain electrode to be manufactured, the second source electrode to be manufactured, and the second drain electrode to be manufactured are opened. And then depositing a source and drain material 5, wherein the source and drain material 5 can be one or more of aluminum, molybdenum, titanium, nickel, copper, silver, chromium and other metals with excellent conductivity, and alloys. After depositing the source-drain material 5, a first source electrode 51 is formed on one side of the first active layer 41, a first drain electrode 52 is formed on the other side of the first active layer 41, a second source electrode 53 is formed on one side of the second active layer 42, and a second drain electrode 54 is formed on the other side of the second active layer 43. The first gate electrode 21, the first source electrode 51 and the first drain electrode 52 constitute one TFT, and the second gate electrode 22, the second source electrode 53 and the second drain electrode 54 constitute the other TFT. The second source 53 may be connected to the first gate 21 through a via hole in the first insulating layer 3, which is in communication with the first gate 21, or the second drain 54 may be connected to the first gate 21 through a via hole in the first insulating layer 3, which is in communication with the first gate 21, so that the connection between the two TFTs can be realized.
Referring to fig. 5, in the first embodiment, after the source and drain electrodes are manufactured, a second insulating layer having an insulating function is manufactured on the source electrode, the drain electrode and the active layer; specifically, an insulating material, such as nitride (silicon nitride, etc.), oxide (silicon oxide, silicon dioxide), or other insulating material, may be plated on the substrate 1, and the second insulating layer 6 may be formed on the source, drain, and active layers. The second insulating layer 6 covers and protects the first source electrode, the second source electrode, the first drain electrode, the second drain electrode, the first active layer and the second active layer, so that the first source electrode, the second source electrode, the first drain electrode, the second drain electrode, the first active layer and the second active layer are not interfered by other film layers.
Referring to fig. 6, in the first embodiment, a third insulating layer is formed on the second insulating layer, the third insulating layer 13 can fill up the uneven substrate, and the third insulating layer 13 is also referred to as a planarization layer. The material of the third insulating layer 13 may be the same as that of the second insulating layer, such as nitride (silicon nitride, etc.), oxide (silicon oxide, silicon dioxide), polyimide, or other insulating material. Then, a first reflective layer, a pixel defining layer, and the like are formed on the third insulating layer 13.
Or, when the second insulating layer is manufactured, the thickness of the second insulating layer is increased to serve as a third insulating layer, and a plurality of uneven film layers on the substrate are paved. Therefore, a third insulating layer is not required to be manufactured, a photomask and a film layer can be saved, and the production cost is saved. And then, film layers such as a first reflecting layer, a pixel defining layer and the like are manufactured on the second insulating layer.
Referring to fig. 6, in the first embodiment, after the source and drain electrodes are manufactured, a through hole communicated with the drain electrode is manufactured on the third insulating layer, and the through hole communicated with the drain electrode on the third insulating layer is used as a connection point with the first reflective layer; specifically, a photoresist may be coated on the substrate, and then the photoresist is exposed and developed, so that the portion to be processed with the through hole is opened. And etching the third insulating layer to the first drain electrode by using the photoresist as a mask, and forming a through hole communicated with the first drain electrode on the third insulating layer. The through hole can enable the drain electrode to be connected with the first reflecting layer, so that the organic light-emitting layer and the TFT which are manufactured subsequently can be connected. Of course, if the thickness of the second insulating layer is increased, a via hole communicating with the drain electrode may be formed in the second insulating layer.
Referring to fig. 7, in the first embodiment, a first reflective layer is then formed on the third insulating layer, and the first reflective layer can better reflect the light emitted from the organic light emitting layer to the cover plate direction to form top emission; specifically, a photoresist may be coated on the substrate, and the photoresist may be patterned, that is, the photoresist may be exposed and developed, so that an opening is formed in a region where the first reflective layer is to be formed. Then, a first reflective layer material is plated, a first reflective layer 7 is formed on the third insulating layer 13, the first reflective layer 7 is located in the through hole of the third insulating layer 13 and on the surface of the third insulating layer 13, and the first reflective layer 7 is connected to the first drain electrode 52 through the through hole of the third insulating layer 13, so that connection is formed between the anode electrode covered on the first reflective layer 7 and the TFT. After the first reflective layer 7 is formed, the photoresist is removed. The material of the first reflecting layer can be one or more of metals with excellent conductivity, such as aluminum, molybdenum, titanium, nickel, copper, silver, chromium and the like, and alloys. The metals have high reflectivity, can play a role of reflecting light, and reflect light emitted by the organic light-emitting layer to the direction of the cover plate to form top light emission. Of course, the first reflective layer may not be formed because the organic light emitting layer may originally transmit light to the cover plate.
Referring to fig. 8, in the first embodiment, an anode is then formed on the third insulating layer: specifically, a photoresist may be coated on the substrate, and the photoresist may be patterned, i.e., exposed and developed to open the area where the anode is to be fabricated. Then depositing anode material, forming transparent anode 8 on the third insulating layer, the anode 8 covering the first reflective layer 7 on the third insulating layer 13, and finally removing the photoresist. The anode material may be Indium Tin Oxide (ITO) thin film material, carbon nanotube, or the like, and may allow the transparent anode 8 to be transmitted by light of the organic light emitting layer. Preferably, the anode has a portion extending beyond the TFT in the vertical direction, and the portion of the anode extending beyond the TFT is used to form a bottom emission structure with the organic light emitting layer on the portion.
Referring to fig. 9, 10 and 13, in the first embodiment, after the anode is fabricated, the pixel defining layer 9 is fabricated on the third insulating layer 13 and the anode 8. Then, a through hole communicating with the anode 8 is formed in the pixel defining layer 9, and the through hole communicating with the anode 8 in the pixel defining layer 9 is used as a connection point of the anode 8 and the organic light emitting layer 10. Then, an organic light emitting layer 10 of the RGB pixel is fabricated in a via hole of the pixel defining layer 9 communicating with the anode 8, and the organic light emitting layer 10 includes a hole injection layer HIL, a hole transport layer HTL, an organic light emitting layer EM, an electron transport layer ETL, and an electron injection layer EIL. The first reflective layer 7 and the organic light emitting layer 10 on the first reflective layer region form a top emission structure that can realize a top emission function of the dual display panel, as shown in fig. 14.
Referring to fig. 11, in the first embodiment, a cathode is then formed on the pixel defining layer and the organic light emitting layer; specifically, a photoresist may be coated on the substrate, and the photoresist may be patterned, i.e., exposed and developed to open the region where the cathode is to be fabricated. Then, a cathode material is evaporated, a cathode 11 covering the organic light emitting layer is formed on the pixel defining layer 9 and the organic light emitting layer 10, and finally, the photoresist is removed. The cathode material may be a material having similar characteristics, such as a magnesium-silver alloy, to form the transparent cathode 11, and the transparent cathode 11 may allow light emitted from the organic light emitting layer 10 and light reflected by the second reflective layer 12 to pass therethrough.
Referring to fig. 12 and 13, in the first embodiment, after the cathode is manufactured, a second reflective layer is manufactured on the cathode, and the second reflective layer can reflect light to form bottom emission; specifically, a photoresist may be coated on the substrate, and the photoresist may be patterned, that is, the photoresist may be exposed and developed, so that an opening is formed in a region where the second reflective layer is to be formed. Then plating a second reflective layer material, forming a second reflective layer 12 on the cathode 11, the second reflective layer 12 is located on the cathode of the organic light-emitting layer 10 area, and finally removing the photoresist. The material of the second reflecting layer can be one or more of aluminum, molybdenum, titanium, nickel, copper, silver, chromium and other metals with excellent conductivity, and alloys. These metals have high reflectivity, so that the second reflective layer 12 can function as a light reflecting layer to reflect light emitted from the organic light emitting layer 10 to the direction of the substrate, thereby forming bottom emission, as shown in fig. 14. The second reflective layer 12 and the organic light emitting layer 10 under the second reflective layer region form a bottom emission structure. The bottom light-emitting structure can realize the bottom light-emitting function of the double-sided display panel. Preferably, the second reflective layer 12 is located on one side (outer side) of the first reflective layer 7, so that light reflected by the second reflective layer 12 and the first reflective layer 7 is not interfered.
In the first embodiment, a cover plate 14 may be finally disposed on the second reflective layer 12 and the cathode 11, and a packaging process is performed.
In order to make the reflective layer (the first reflective layer and the second reflective layer) better reflect the light of the organic light emitting layer, in the second embodiment and the third embodiment, corresponding improvements are made on the basis of the first embodiment, respectively, only different processes are described in the second embodiment and the third embodiment, and the processes after the different processes are still the same as the first embodiment, and thus, no further description is given.
Referring to fig. 15, in the second embodiment, in order to reduce the mutual interference between the top-emission mode and the bottom-emission mode, two organic light emitting layers are fabricated, and a gap is formed between the two organic light emitting layers; specifically, two through holes connected to the anode 10 may be formed in the pixel defining layer 9, where the bottom of one through hole connected to the anode 10 is the anode 10 on the first reflective layer 7, and the bottom of the other through hole connected to the anode 10 is the anode 10 on the surface of the third insulating layer 13. Then, a first organic light emitting layer 10 is formed in the via hole of the anode on the first reflective layer at the bottom of the pixel defining layer 9, and a second organic light emitting layer 10 is formed in the via hole of the anode on the third insulating layer at the bottom of the pixel defining layer 9. A second reflective layer 12 may then be fabricated on the area of the second organic light-emitting layer 10. Therefore, interference of reflected light can be better avoided between the second reflecting layer 12 and the first reflecting layer 7, and the display effect is improved.
Referring to fig. 16, in the third embodiment, in order to reduce the thickness of the bottom-emission light penetrating the film layer, a window may be formed on the third insulating layer of the pixel defining layer in the second reflective layer region, and the bottom of the window may be the second insulating layer or the first insulating layer. The cross-sectional shape of the window may be circular, square, or fan-shaped, etc. And then, an anode material, a cathode material and a second reflecting layer material can be sequentially plated, so that the bottom light-emitting structure is arranged in the window and is closer to the substrate. Therefore, the thickness of the bottom light-emitting structure reflecting light penetrating through the film layer can be reduced, and the light-emitting efficiency is further improved.
Referring to fig. 17, or in the fourth embodiment, the second reflective layer 12 may be further disposed on the cover plate 14, and the second reflective layer 12 is above the anode on the third insulating layer and is located on the side of the cover plate close to the substrate. And covering the side of the cover plate with the second reflecting layer on the cathode so as to connect the second reflecting layer with the cathode. The same effect of reflecting light is achieved, since the second reflective layer 12 is provided on the cover plate 14. The number of the manufacturing process after the evaporation of the organic light-emitting layer is reduced, the damage of the manufacturing process to the light-emitting layer is further reduced, and the yield of the display panel is improved.
The double-sided display panel in the technical scheme has two light-emitting structures, namely a top light-emitting structure and a bottom light-emitting structure, in each RGB sub-pixel. The top-emitting OLED device and the bottom-emitting OLED device are controlled by the thin film transistor. The synchronous display and double-sided asynchronous effects of the double-sided display panel can be realized through the array substrate, the manufacturing process of the double-sided display panel can be simplified, the production cost is reduced, and meanwhile, the picture resolution is not sacrificed.
The embodiment provides a double-sided display panel, and the double-sided display panel is manufactured by the above manufacturing method. Referring to fig. 1 to 17, the dual-sided display panel includes: the substrate 1 may be glass, transparent plastic, metal foil, etc. commonly used in the conventional manufacturing process. Referring to fig. 1, a gate electrode of a TFT is disposed on a substrate, wherein the TFT may have a top gate structure, a bottom gate structure, a BCE structure, an ESL structure (an etching stop layer is disposed on an active layer), or other structures. The grid electrode can be one or more of metals with excellent conductivity, such as aluminum, molybdenum, titanium, nickel, copper, silver, chromium and the like, and alloys. Referring to fig. 2, a first insulating layer covering the gate is disposed on the gate, and the first insulating layer may be, for example, nitride (silicon nitride, etc.), oxide (silicon oxide, silicon dioxide), or other insulating materials. The first insulating layer with insulating function covers the grid, so that the grid can be prevented from contacting other metal electrodes.
Referring to fig. 3, in the first embodiment, an active layer of a TFT is disposed on a first insulating layer of a gate region. The active layer material may be polysilicon, oxide semiconductor, graphene, carbon nanotube, organic semiconductor, or the like.
Referring to fig. 4, in the first embodiment, a source electrode is disposed on one side of an active layer, a drain electrode is disposed on the other side of the active layer, and a gate electrode, the source electrode and the drain electrode form a TFT. The source and drain electrodes may be one or more of aluminum, molybdenum, titanium, nickel, copper, silver, chromium and other metals with excellent conductivity, and alloys thereof. One TFT may be provided on the substrate, or a plurality of TFTs may be provided. The drawings in this application show that two TFTs are provided on a substrate, one TFT including a first gate electrode, a first source electrode and a first drain electrode, and the other TFT including a second gate electrode, a second source electrode and a second drain electrode.
Referring to fig. 4, in the first embodiment, if a plurality of TFTs are connected, a via hole connected to the gate is formed in the first insulating layer in the gate region of one TFT, and then the source or drain of another TFT is connected to the gate of one TFT through a hole in the first insulating layer above the gate of the other TFT. For example, a through hole connected to the first gate is formed in the first insulating layer of the first gate region, and the second source or the second drain is connected to the first gate through the hole in the first insulating layer above the first gate, so that the two TFTs are connected.
Referring to fig. 5, in the first embodiment, a second insulating layer covering the source electrode, the drain electrode and the active layer is disposed on the source electrode, the drain electrode and the active layer. A second insulating layer such as nitride (silicon nitride, etc.), oxide (silicon oxide, silicon dioxide), or other insulating material. A through hole communicating with the drain electrode (first drain electrode) is provided on the second insulating layer as a connection point of the first reflective layer and the drain electrode.
Referring to fig. 6, in the first embodiment, a third insulating layer 13 is formed on the second insulating layer, and the third insulating layer 13 is also called a planarization layer, so that the substrate may be uneven due to a plurality of processes. The material of the third insulating layer 13 may be the same as that of the second insulating layer, such as nitride (silicon nitride, etc.), oxide (silicon oxide, silicon dioxide), polyimide, or other insulating material.
Referring to fig. 14, in some embodiments, the second insulating layer may be increased in thickness to serve as a third insulating layer to smooth out the plurality of layers of high and low profile on the substrate. Therefore, the third insulating layer is not needed, and the cost is saved.
Referring to fig. 7, in the first embodiment, a first reflective layer is disposed on a third insulating layer, and the first reflective layer is connected to a first drain through a via hole in the third insulating layer, the via hole being connected to the first drain. The material of the first reflecting layer can be one or more of metals with excellent conductivity, such as aluminum, molybdenum, titanium, nickel, copper, silver, chromium and the like, and alloys. The metals have high reflectivity, can play a role of reflecting light, and reflect light emitted by the organic light-emitting layer to the direction of the cover plate to form top light emission.
Referring to fig. 8, in the first embodiment, a transparent anode is disposed on the second insulating layer, and the anode further covers the first reflective layer. The anode material may be Indium Tin Oxide (ITO) thin film material, carbon nanotube, or the like, and may be such that the transparent anode may be transmitted by light of the organic light emitting layer. Preferably, the anode has a portion extending beyond the TFT in the vertical direction, and the portion of the anode extending beyond the TFT is used to form a bottom emission structure with the organic light emitting layer on the portion.
Referring to fig. 9, in the first embodiment, a pixel defining layer is disposed on the anode and the second insulating layer. A through hole communicating with the anode is provided on the pixel defining layer, and the through hole is used for a connection point of the anode and the organic light emitting layer.
Referring to fig. 10, in the first embodiment, the organic light emitting layers of RGB are disposed in the through holes communicating with the anode on the pixel defining layer, and include a hole injection layer HIL, a hole transport layer HTL, an organic light emitting layer EM, an electron transport layer ETL, and an electron injection layer EIL. The first reflecting layer and the organic light emitting layer on the first reflecting layer region form a top light emitting structure, and the top light emitting structure can realize the top light emitting function of the double-sided display panel.
Referring to fig. 11, in the first embodiment, a cathode covering the organic light emitting layer is disposed on the pixel defining layer and the organic light emitting layer. The cathode may be made of a material having similar characteristics to magnesium-silver alloy, so that the cathode is transparent, and the transparent cathode can allow light emitted from the organic light emitting layer to transmit light reflected by the second reflective layer.
Referring to fig. 12, in the first embodiment, a second reflective layer is disposed on the cathode in the organic light emitting layer region. The second reflective layer may be made of one or more metals having excellent conductivity, such as aluminum, molybdenum, titanium, nickel, copper, silver, and chromium, and alloys thereof. The metals have high reflectivity, so that the second reflecting layer can play a role of reflecting light, and the light emitted by the organic light emitting layer is reflected to the direction of the substrate to form bottom light emission. The second reflecting layer and the organic light emitting layer under the second reflecting layer region form a bottom light emitting structure. The bottom light-emitting structure can realize the bottom light-emitting function of the double-sided display panel. Preferably, the second reflective layer is located on one side (outer side) of the first reflective layer, so that light reflected by the second reflective layer and the first reflective layer 7 does not interfere.
In the first embodiment, a cover plate may be finally disposed on the second reflective layer and the cathode, and a packaging process is performed.
In order to make the reflective layer (the first reflective layer and the second reflective layer) better reflect the light of the organic light emitting layer, in the second embodiment and the third embodiment, corresponding improvements are made on the basis of the first embodiment, respectively, only different processes are described in the second embodiment and the third embodiment, and the processes after the different processes are still the same as the first embodiment, and thus, no further description is given.
Referring to fig. 15, in the second embodiment, in order to reduce the mutual interference between the top emission mode and the bottom emission mode, two organic light emitting layers are disposed with a gap therebetween; specifically, two through holes connected to the anode 10 may be provided in the pixel defining layer 9, where the bottom of one through hole connected to the anode 10 is the anode 10 on the first reflective layer 7, and the bottom of the other through hole connected to the anode 10 is the anode 10 on the surface of the third insulating layer 13. Then, a first organic light emitting layer 10 is disposed in the through hole of the pixel defining layer 9 having the anode on the first reflective layer at the bottom, and a second organic light emitting layer 10 is disposed in the through hole of the pixel defining layer 9 having the anode on the third insulating layer at the bottom. A second reflective layer 12 may then be provided on the area of the second organic light-emitting layer 10. Therefore, interference of reflected light can be better avoided between the second reflecting layer 12 and the first reflecting layer 7, and the display effect is improved.
Referring to fig. 16, in a third embodiment, in order to reduce the thickness of the bottom emission light penetrating through the film layer, a window is disposed on the third insulating layer (the third insulating layer on one side of the first reflective layer) in the area of the second reflective layer of the pixel defining layer, and the bottom of the window may be the third insulating layer, the first insulating layer, or the second insulating layer. An anode, a cathode and a second reflective layer may then be arranged in and outside the window such that the bottom emission structure is arranged in the window, closer to the substrate. Therefore, the thickness of the bottom light-emitting structure reflecting light penetrating through the film layer can be reduced, and the light-emitting efficiency is further improved.
Referring to fig. 17, in the fourth embodiment, the second reflective layer 12 may be further disposed on the cover plate 14, and the second reflective layer 12 is above the anode on the third insulating layer and is located on the side of the cover plate close to the substrate. And covering the side of the cover plate with the second reflecting layer on the cathode so as to connect the second reflecting layer with the cathode. Meanwhile, the second reflective layer 12 is disposed on the cover plate 14, so that the number of processes after evaporation of the organic light emitting layer is reduced, damage of the processes to the light emitting layer is further reduced, and the yield of the display panel is improved.
It should be noted that, although the above embodiments have been described herein, the invention is not limited thereto. Therefore, based on the innovative concepts of the present invention, the technical solutions of the present invention can be directly or indirectly applied to other related technical fields by making changes and modifications to the embodiments described herein, or by using equivalent structures or equivalent processes performed in the content of the present specification and the attached drawings, which are included in the scope of the present invention.
Claims (10)
1. A method for manufacturing a double-sided display panel is characterized by comprising the following steps:
manufacturing a thin film transistor on a substrate;
manufacturing an insulating layer covering the thin film transistor on the thin film transistor, and manufacturing a through hole communicated with the thin film transistor on the insulating layer;
manufacturing a first reflecting layer on the insulating layer, wherein the first reflecting layer is connected with the thin film transistor through a through hole on the insulating layer;
depositing an anode material, and forming a transparent anode on the insulating layer, wherein the anode covers the first reflecting layer and also has a part on the insulating layer;
manufacturing a pixel definition layer on the anode and the insulating layer, and manufacturing a through hole communicated with the anode on the pixel definition layer;
manufacturing an organic light-emitting layer in a through hole communicated with the anode on the pixel defining layer;
depositing a cathode material, and forming a cathode covering the organic light-emitting layer on the pixel defining layer and the organic light-emitting layer, wherein the cathode is transparent;
and manufacturing a second reflecting layer on the cathode of the organic light emitting layer region, wherein the second reflecting layer is positioned on one side of the first reflecting layer.
2. The method of claim 1, further comprising the steps of, when forming a via hole in the pixel defining layer for connecting to the anode:
and manufacturing two through holes communicated with the anode on the pixel definition layer, wherein the two through holes are not communicated, the bottom of one through hole is the anode on the first reflection layer, and the bottom of the other through hole is the anode on the insulating layer.
3. The method of claim 1, further comprising the steps of, before depositing the anode material:
and manufacturing a window on the insulating layer on one side of the first reflecting layer, wherein the anode covers the window of the insulating layer and the first reflecting layer, and the second reflecting layer is arranged at the window.
4. The method of claim 1, wherein when the second reflective layer is formed on the cathode of the organic light emitting layer region, the method further comprises the following steps:
and manufacturing a second reflecting layer on the cover plate, and covering one side of the cover plate with the second reflecting layer on the cathode so that the second reflecting layer is connected with the cathode.
5. The method of claim 1, wherein the insulating layer comprises a passivation layer and a planarization layer, and the planarization layer is disposed on the passivation layer.
6. A dual-sided display panel, comprising:
a thin film transistor is arranged on the substrate;
an insulating layer covering the thin film transistor is arranged on the thin film transistor, and a through hole communicated with the thin film transistor is arranged on the insulating layer;
a first reflecting layer is arranged on the insulating layer and is connected with the thin film transistor through a through hole in the insulating layer;
a transparent anode is arranged on the insulating layer, the anode covers the first reflecting layer, and the anode also has a part on the insulating layer surface;
a pixel defining layer is arranged on the anode and the insulating layer, and a through hole communicated with the anode is arranged on the pixel defining layer;
an organic light emitting layer is arranged in a through hole which is communicated with the anode on the pixel defining layer;
a cathode which covers the organic light-emitting layer is arranged on the pixel defining layer and the organic light-emitting layer, and the cathode is transparent;
and a second reflecting layer is arranged on the cathode of the organic light-emitting layer region and is positioned on one side of the first reflecting layer.
7. The double-sided display panel of claim 6, wherein the number of the through holes connecting the anode on the pixel defining layer is two, and the two through holes are not connected, one through hole has the anode on the first reflective layer at the bottom, and the other through hole has the anode on the insulating layer at the bottom.
8. The double-sided display panel of claim 6, wherein a window is provided on the insulating layer on the side of the first reflective layer, the anode covers the window of the insulating layer and the first reflective layer, and the second reflective layer is at the window.
9. The dual-sided display panel of claim 6, further comprising a cover plate, wherein the second reflective layer is disposed on the cover plate, and the side of the cover plate having the second reflective layer is covered on the cathode so that the second reflective layer is connected to the cathode.
10. The dual sided display panel of claim 6, wherein the insulating layer comprises a passivation layer and a planarization layer, the planarization layer disposed on the passivation layer.
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| CN202010226674.9A CN111370366A (en) | 2020-03-27 | 2020-03-27 | Double-sided display panel and manufacturing method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112687704A (en) * | 2020-12-25 | 2021-04-20 | 武汉华星光电半导体显示技术有限公司 | Array substrate and preparation method thereof |
| CN112786668A (en) * | 2021-01-08 | 2021-05-11 | 武汉华星光电半导体显示技术有限公司 | Double-sided display panel |
| CN113053974A (en) * | 2021-03-11 | 2021-06-29 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
| CN113314682A (en) * | 2021-05-27 | 2021-08-27 | 京东方科技集团股份有限公司 | Display panel, preparation method thereof and electronic equipment |
-
2020
- 2020-03-27 CN CN202010226674.9A patent/CN111370366A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112687704A (en) * | 2020-12-25 | 2021-04-20 | 武汉华星光电半导体显示技术有限公司 | Array substrate and preparation method thereof |
| CN112786668A (en) * | 2021-01-08 | 2021-05-11 | 武汉华星光电半导体显示技术有限公司 | Double-sided display panel |
| CN113053974A (en) * | 2021-03-11 | 2021-06-29 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
| CN113314682A (en) * | 2021-05-27 | 2021-08-27 | 京东方科技集团股份有限公司 | Display panel, preparation method thereof and electronic equipment |
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