CN111370362B - Intelligent multi-dimensional multifunctional sensing and information processing integrated circuit - Google Patents

Intelligent multi-dimensional multifunctional sensing and information processing integrated circuit Download PDF

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CN111370362B
CN111370362B CN202010181514.7A CN202010181514A CN111370362B CN 111370362 B CN111370362 B CN 111370362B CN 202010181514 A CN202010181514 A CN 202010181514A CN 111370362 B CN111370362 B CN 111370362B
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林和
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • H01L21/76208—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region using auxiliary pillars in the recessed region, e.g. to form LOCOS over extended areas
    • G—PHYSICS
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    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
    • G01D5/142—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices
    • G01D5/145—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices influenced by the relative movement between the Hall device and magnetic fields
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/48—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using wave or particle radiation means

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Abstract

The invention provides an intelligent multi-dimensional multifunctional sensing and information processing integrated circuit. The method comprises the following steps: a substrate, a transition layer and a superlattice very large scale integrated circuit layer; wherein the substrate is composed of one or more of silicon, compound semiconductor, gallium nitride, gallium arsenide, or silicon carbide; a transition layer composed of one or more of silicon dioxide, silicon carbide and compound semiconductor is arranged on the top of the substrate; the superlattice ultra-large scale integrated circuit layer established based on the two-dimensional electron gas, the two-dimensional hole gas and the quantum well circuit is formed on the top and the side of the transition layer.

Description

Intelligent multidimensional multifunctional sensing and information processing integrated circuit
Technical Field
The invention relates to the technical field of sensing, in particular to an intelligent multi-dimensional multifunctional sensing and information processing integrated circuit.
Background
At present, various sensors in China and China, such as photoelectric sensors, thermosensitive sensors, magnetic-sensitive sensors, position sensors, pressure sensors, acoustic sensors and the like, are all separating devices or are one-dimensional or two-dimensional arrays formed by combining separating devices. The current big data of high-speed development, artificial intelligence and comprehensive intelligent market application of datamation urgently need high performance high reliability and have acceptable cost's neotype sensing and information processing integrated circuit, and more importantly neotype sensing and information processing integrated circuit still must satisfy special requirements such as artificial intelligence and space era to hypervelocity, anti high and low temperature, antiradiation.
Also current sensors have a split device mode: a device can only detect one type of information, e.g., a photosensor can only measure a photoelectric signal, etc. If a plurality of kinds of information needs to be detected, a plurality of various sensor separation devices are needed, so that the sensor device has single performance, cannot detect a plurality of kinds of information simultaneously, and cannot realize the intelligent integration of related information of sound, light, electricity and magnetism. The mode has high manufacturing cost, poor device performance and low reliability, and the high and low temperature resistance and radiation resistance are difficult to meet the requirements. The device performance is poor, the reliability is low, the manufacturing process of a plurality of separated device sensors or sensor arrays is too complex, and the production period is long.
In this prior art: the sensor and the information processing part in the sensor system are separated, so that the real-time information processing cannot be effectively carried out, the millimeter wave sub-millimeter and wave micro-wave integrated circuit is separated from the receiving and transmitting antenna, the silicon-based millimeter wave integrated circuit has low working frequency, and the problems of compound semiconductor-based millimeter wave integrated circuit, unsatisfactory high and low temperature resistance and radiation resistance and the like do not exist in the market.
Disclosure of Invention
The invention provides an intelligent multi-dimensional multifunctional sensing and information processing integrated circuit. The sensor is used for solving the problems that the performance of the sensor of the existing sensor is single, the intelligent integration of related information of acousto-optic electromagnetism cannot be realized by simultaneously detecting various information, the manufacturing cost is high, the performance of the sensor is poor, the reliability is low, the emergency requirements cannot be met easily by high and low temperature resistance and radiation resistance, the cost is high, and the production period is long.
An intelligent multi-dimensional multifunctional sensing and information processing integrated circuit, comprising: the device comprises a substrate, a transition layer and a superlattice very large scale integrated circuit layer, wherein the transition layer is arranged between the substrate and the superlattice very large scale integrated circuit layer; wherein,
the substrate is composed of one or more of silicon, compound semiconductor, gallium nitride, gallium arsonium or silicon carbide;
the top of the substrate is provided with a transition layer consisting of one or more of silicon dioxide, silicon carbide and compound semiconductor;
a superlattice very large scale integrated circuit layer which is created based on two-dimensional electron gas, two-dimensional hole gas and quantum well circuit is formed on the top and the side of the transition layer; wherein,
the superlattice very large scale integrated circuit layer comprises a superlattice sensing element and a very large scale integrated circuit element, and the very large scale integrated circuit element is connected to the periphery of the superlattice sensing element;
the superlattice sensing component is formed by combining one or more superlattice sensors;
the superlattice sensor at least comprises one of a superlattice Hall magnetic sensor, a superlattice photoelectric sensor, a superlattice millimeter wave and micron wave sensor, a superlattice ultrasonic sensor and a superlattice bioelectronic sensor;
the ultra-large scale integrated circuit component is formed by combining an information storage component, an information processing circuit and compatible integrated circuits of millimeter waves, micron waves, submillimeter waves, surface acoustic waves, magnetosensitivities, photoelectrons and bioelectronics.
As an embodiment of the present invention: when the superlattice sensing component is a combination of multiple superlattice sensors, an isolation layer is constructed on the periphery of each superlattice sensor through a multi-layer metal and dielectric isolation process, and the adjacent superlattice sensors are isolated through the isolation layers; wherein,
the isolation layer includes: the metal isolation layer takes the plane shield and the vertical shield as the framework, and the dielectric isolation layer takes the plane shield and the vertical shield as the framework;
when the combination of the plurality of superlattice sensors comprises the superlattice photoelectric sensor, the superlattice ultrasonic sensor or the superlattice bioelectronic sensor, a light waveguide needs to be arranged, wherein a sound waveguide is arranged around the superlattice ultrasonic sensor;
the superlattice sensing component comprises a homogeneous superlattice layer or a heterogeneous superlattice layer, wherein the homogeneous superlattice layer is composed of silicon, gallium nitride and gallium arsonium; the hetero superlattice layer is composed of arsonium gallium nitride, arsonium gallium nitride and azophoska gallium nitride.
As an embodiment of the present invention: the superlattice Hall magnetic sensor consists of a superlattice intrinsic layer, a superlattice N-type layer, a superlattice low-resistance P-type layer, an N + conducting layer, an N + ohmic contact layer, an ohmic contact layer, a dielectric protection layer and a channel insulation layer; wherein,
the superlattice Hall magnetic sensor at least comprises the following three types: the sensor comprises a prismatic superlattice Hall magnetic sensor, a rectangular superlattice Hall magnetic sensor and a spiral superlattice Hall magnetic sensor;
the prismatic superlattice Hall magnetic sensor and the rectangular superlattice Hall magnetic sensor are n-i-p-i in single-layer structure, and n-i-p-i-n-i-p-i … … in multi-layer repeated structure;
the spiral superlattice Hall magnetic sensor can be used as a calibrator, and can adjust the current flowing through the superlattice N-type layer under the conditions of zero bias, negative bias or positive bias Vpn, wherein the direction of the current determines the direction of a calibration magnetic field.
As an embodiment of the present invention: the superlattice photoelectric sensor consists of a superlattice intrinsic layer, a superlattice low-resistance N-type layer, a superlattice P-type layer, an N + conducting layer, a P + conducting layer, an ohmic contact layer, a dielectric protective layer and a channel insulating layer; wherein,
the P + conductive layer is connected with the P type layer;
the N + conductive layer is connected with the N-type layer;
the superlattice photoelectric sensor has a multi-layer repeating structure n-i-p-i-n-i-p-i … ….
As an embodiment of the present invention: the superlattice millimeter wave sensor consists of a superlattice millimeter wave radar sensor which comprises an information processor, an analog-to-digital converter, a preamplifier, a mixer, a local oscillator, a transmitting antenna and a receiving antenna; wherein the information processor, the analog-to-digital converter, the preamplifier, the mixer and the local oscillator are all based on a combination structure of a plurality of N-channel doped N-i-P-i superlattice field effect transistors, P-channel doped N-i-P-i superlattice field effect transistors, superlattice vertical type P-N-P bipolar transistors, superlattice planar P-N-P bipolar transistors, superlattice vertical type N-P-N bipolar transistors, superlattice planar N-P-N bipolar transistors, P-i-N-i superlattice diodes and PN junction capacitance varistors, superlattice Schottky diodes, N-i-P-i superlattice resistors and varistors, N-i-P-i superlattice inductors and varistors and N-i-P-i superlattice flash memories Building;
the superlattice millimeter wave sensor comprises a superlattice millimeter wave radar sensor having a receiving antenna and a transmitting antenna; wherein,
the receiving antenna comprises a non-grating receiving antenna and a grating receiving antenna;
the grating receiving antenna comprises a grating and a waveguide;
the waveguide forming process comprises the following steps: a bottom covering layer for growing the waveguide is arranged on the transition layer, an optical waveguide layer is grown on the bottom covering layer, and the waveguide is formed on a growing top covering layer of the optical waveguide layer;
the forming process of the grating comprises the following steps: and depositing a grating film on the covering layer at the top of the optical waveguide layer, determining the shape and the size of the grating through a photoetching process, and etching the grating by plasma etching.
As an embodiment of the invention: the superlattice ultrasonic sensor consists of a gate electrode, a superlattice N-type layer, a piezoelectric layer, a back electrode and a piezoelectric film;
the superlattice ultrasonic sensor comprises an ultrasonic transmitting mode and an ultrasonic receiving mode; wherein, in the ultrasonic wave transmission mode: applying reverse bias between a gate electrode and a source electrode of the superlattice ultrasonic sensor to enable an interface of a superlattice N-type layer and a piezoelectric layer to be in a depletion state, applying a modulation radio frequency signal between a back electrode and the gate electrode, and generating an acoustic wave signal by the piezoelectric film when the frequency of the radio frequency signal is consistent with the resonance frequency of the piezoelectric film;
in the ultrasonic wave reception mode: and applying reverse bias between a gate electrode and a source electrode of the superlattice ultrasonic sensor to enable an interface of the superlattice N-type layer and the piezoelectric layer to be in a depletion state, wherein a two-dimensional carrier flow corresponding to the frequency of an acoustic wave signal is generated at the interface of the piezoelectric film layer and the superlattice N-type layer by the acoustic wave signal received by the piezoelectric film, and the current is amplified by the superlattice preamplifier.
As an embodiment of the present invention: the superlattice bioelectronic sensor comprises a superlattice bioelectronic impedance sensor and a superlattice bioelectronic spectrum sensor; wherein,
the superlattice biological electronic impedance sensor comprises a superlattice intrinsic layer, a superlattice N-type layer, a superlattice P-type layer, a P + conducting layer, a grid insulating layer, an ohmic contact layer, a dielectric protective layer, a channel insulating layer and a biological medium layer; the superlattice intrinsic layer, the superlattice N-type layer, the superlattice P-type layer, the P + conducting layer, the grid insulating layer, the ohmic contact layer, the dielectric protective layer and the channel insulating layer are symmetrically distributed on two sides of the biological medium layer; the ohmic contact layer comprises a source electrode, a drain electrode, a first grid electrode and a second grid electrode; the source electrode and the drain electrode are symmetrically distributed on two sides of the biological medium layer; the first grid and the second grid are symmetrically distributed on two sides of the biological medium layer;
the superlattice biological spectrum sensor comprises a superlattice intrinsic layer, a superlattice N-type layer, a superlattice P-type layer, an N + conducting layer, a P + conducting layer, a first superlattice N + layer, a second superlattice N + layer, a first superlattice P + layer, a second superlattice P + layer, an ohmic contact layer, a dielectric protection layer, a channel insulating layer, a biological medium channel, a photoelectric sensing receiving area and a light emitting area; the photoelectric sensing receiving area and the light emitting area are symmetrically distributed on two sides of the biological medium channel; the superlattice intrinsic layer is provided with two layers which are respectively and symmetrically distributed on two sides of the biological medium layer with the second superlattice N + layer and the second superlattice P + layer; the superlattice N-type layer and the first superlattice N + layer are distributed on two sides of the biological medium layer; the superlattice P type layer and the first superlattice P + layer are distributed on two sides of the biological medium layer.
As an embodiment of the present invention: the information storage component, the information processing circuit and the compatible millimeter wave, micron wave, sub-millimeter wave, surface acoustic wave, magnetic sensitivity, photoelectron and bioelectronic integrated circuit of the super large scale integrated circuit component are all composed of a doped N-channel N-i-P-i superlattice field effect transistor, a doped P-channel N-i-P-i superlattice field effect transistor, a superlattice vertical P-N-P bipolar transistor, a superlattice planar P-N-P bipolar transistor, a superlattice vertical N-P-N bipolar transistor, a superlattice planar N-P-N bipolar transistor, a P-i-N-i superlattice diode, a PN junction capacitance variable capacitor, a superlattice base diode, an N-i-P-i superlattice resistor and varistor, The n-i-p-i superlattice inductor and the inductor are combined with one or more of the n-i-p-i superlattice flash memory; wherein,
the N-channel doped N-i-P-i superlattice field effect transistor consists of a superlattice N-type layer, a superlattice intrinsic layer, a superlattice P-type layer, a P + conducting layer, a grid insulating layer, a dielectric protective layer, an ohmic contact layer and a channel insulating layer;
the P-channel-doped N-i-P-i superlattice field effect transistor consists of a superlattice P-type layer, a superlattice intrinsic layer, a superlattice N-type layer, an N + conducting layer, a grid insulating layer, a dielectric protective layer, an ohmic contact layer and a channel insulating layer;
the superlattice vertical P-N-P bipolar transistor consists of a superlattice collector P-type layer, a superlattice emitter P-type layer, a superlattice base N-type layer, an N + conducting layer, a P + conducting layer, a dielectric protective layer, an ohmic contact layer and a channel insulating layer;
the superlattice planar P-N-P bipolar transistor consists of a superlattice collector P-type region, a superlattice emitter P-type region, a superlattice base N-type region, a dielectric protection layer, an ohmic contact layer and a channel insulation layer;
the superlattice vertical N-P-N bipolar transistor comprises a superlattice collector N-type layer, a superlattice emitter N-type layer, a superlattice base P-type layer, an N + conducting layer, a P + conducting layer, a dielectric protective layer, an ohmic contact layer and a channel insulating layer
The superlattice planar N-P-N bipolar transistor consists of a superlattice collector N-type layer, a superlattice emitter N-type layer, a superlattice base P-type layer, a dielectric protection layer, an ohmic contact layer and a channel insulation layer;
the P-i-N-i superlattice diode and the PN junction capacitance variable capacitor consist of a superlattice P-type layer, a superlattice intrinsic layer, a superlattice low-resistance N-type layer, a P + conducting layer, a grid insulating layer, a dielectric protective layer, an ohmic contact layer and a channel insulating layer;
the superlattice Schottky diode consists of a superlattice N-type layer, a superlattice base N-type layer, a Schottky contact layer, a superlattice intrinsic layer, an N + conducting layer, a dielectric protection layer, an ohmic contact layer and a channel insulating layer;
the N-i-P-i superlattice resistor and rheostat consists of a superlattice P-type layer, a superlattice low-resistance N-type layer, a superlattice intrinsic layer, an N + conducting layer, a P + conducting layer, a dielectric protection layer, an ohmic contact layer and a channel insulating layer;
the N-i-P-i superlattice inductor and the N-i-P-i superlattice inductor comprise a superlattice P-type layer, a superlattice low-resistance N-type layer, a superlattice intrinsic layer, an N + conducting layer, a P + conducting layer, a dielectric protection layer, an ohmic contact layer and a channel insulating layer; the N + conducting layer and the P + conducting layer of the N-i-P-i superlattice inductor and the variable inductor are opposite to the N + conducting layer and the P + conducting layer of the N-i-P-i superlattice resistor and the variable resistor in direction;
the N-i-P-i superlattice flash memory comprises a P-channel-doped N-i-P-i superlattice field effect ferroelectric transistor flash memory and an N-channel-doped N-i-P-i superlattice field effect ferroelectric transistor flash memory;
the P-channel-doped N-i-P-i superlattice field effect ferroelectric transistor flash memory consists of a superlattice N-type layer, a superlattice low-resistance P-type layer, a superlattice intrinsic layer, a ferroelectric thin film layer, a P + conducting layer, a dielectric protection layer, an ohmic contact layer and a channel insulation layer;
the N-channel-doped N-i-P-i superlattice field effect ferroelectric transistor flash memory consists of a reverse superlattice N-type layer, a superlattice low-resistance P-type layer, a superlattice intrinsic layer, a ferroelectric thin film layer, a metal contact layer, a P + conducting layer, a dielectric protection layer, an ohmic contact layer and a channel insulating layer; wherein the metal contact layer is over the ferroelectric thin film layer.
As an embodiment of the present invention: the substrate, the transition layer and the superlattice very large scale integrated circuit layer are all manufactured by one or more of the manufacturing processes of thin film growth, photoetching, ion etching, channel filling based on insulating material growth, chemical mechanical polishing, ion implantation, ion activation, metal deposition, integrated circuit cutting, integrated circuit packaging, integrated circuit testing, chemical corrosion cleaning, bump packaging, isolation groove photoetching and isolation groove ion etching.
As an embodiment of the present invention: the super large scale integrated circuit component is connected to the periphery of the superlattice sensing component and comprises the following processes:
step 1: the ultra-large scale integrated circuit component obtains a driving current according to the electric field intensity of the superlattice sensing component, and the driving current I can be expressed as:
Figure GDA0003502920580000081
wherein Q represents the number of charges, E represents the electric field intensity of the superlattice sensing element, phi represents the dielectric constant, and sigma represents the spatial permeability;
step 2: the superlattice sensing component obtains a starting current according to the electric field intensity, and the starting current IqCan be expressed as:
Figure GDA0003502920580000082
wherein q represents an amount of charge, and V represents a start-up voltage; the N represents an energy level of the quantum well;
and step 3: when the starting current is compared with the driving current, and when the starting current is equal to the driving current, the ultra-large scale integrated circuit component is connected to the periphery of the superlattice sensing component to provide the starting current for the superlattice sensing component.
The invention has the beneficial effects that: the invention constructs a multi-dimensional multifunctional sensor and an information processing integrated circuit, and intelligently integrates various sensors, corresponding information storage and processing circuits, compatible millimeter wave sub-millimeter wave, surface acoustic wave, magnetosensitive, photoelectron and biological electronic integrated circuits, so that the sensor has the characteristics of multifunction, high performance, high reliability, radiation resistance, high and low temperature resistance and the like.
The multifunctional intelligent medical robot has multiple functions, and can meet the requirements of high and new technical fields of information-based society artificial intelligence, automatic driving, intelligent medical treatment and the like.
The invention has high performance, and the sensing performance of a novel integrated circuit in various fields of light, magnetism, electricity, radio frequency, sound wave and bioelectricity is improved by orders of magnitude in aspects of sensitivity, speed, frequency spectrum range, spectral width and the like compared with that of a corresponding separation device.
The invention has high reliability, and because the novel integrated circuit adopts novel two-dimensional electron and hole gas devices, the high temperature resistance, low temperature resistance and radiation resistance of the novel integrated circuit are greatly superior to those of the traditional silicon and compound integrated circuit.
The invention has flexible design, and can design and manufacture various high-performance sensing and information integrated circuits by utilizing the special properties and special devices of two-dimensional electron gas and two-dimensional hole gas of a superlattice integrated circuit, in particular to novel superlattice millimeter wave, submillimeter wave, micron wave, surface acoustic wave, magnetic sensitivity, photoelectron and bioelectronic sensors.
The invention has the advantages of simplified process, short production period, reasonable cost and the like. Because the special performance of two-dimensional electron gas and two-dimensional hole gas of the superlattice integrated circuit is utilized to design the integrated circuit components required by industrial application, the process steps can be greatly simplified, for example, the number of photoetching templates and the corresponding process steps can be reduced by more than thirty percent, so that the production period and the cost can be greatly optimized.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and drawings.
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a general block diagram of an embodiment of the present invention;
FIG. 2 is a schematic diagram of an isolation structure between adjacent sensors based on a multi-level metal and dielectric isolation process according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a prismatic superlattice Hall magnetic sensor in an embodiment of the invention;
FIG. 4 is a schematic structural diagram of a spiral superlattice Hall magnetic sensor in an embodiment of the invention;
FIG. 5 is a schematic diagram of a superlattice millimeter wave radar sensor in an embodiment of the invention;
FIG. 6 is a schematic diagram illustrating an integration of a transmitting antenna and a sensor of a millimeter-wave radar sensor in an embodiment of the present invention;
FIG. 7 is a schematic diagram of a grating waveguide antenna of a millimeter-wave radar sensor according to an embodiment of the present invention;
FIG. 8 is a schematic view of a superlattice ultrasonic sensor in an embodiment of the invention;
fig. 9 is a cross-sectional view (a) of a superlattice bioelectronic impedance sensor, a cross-sectional view (b) of a superlattice biological spectrum sensor, and an aerial view (c) of the superlattice biological spectrum sensor according to an embodiment of the present invention.
Detailed Description
The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are described herein for the purpose of illustration and explanation and not limitation.
Fig. 1 shows an intelligent multi-dimensional multifunctional sensing and information processing integrated circuit, which comprises: the device comprises a substrate, a transition layer and a superlattice very large scale integrated circuit layer, wherein the transition layer is arranged between the substrate and the superlattice very large scale integrated circuit layer; wherein,
the substrate is composed of one or more of silicon, a compound semiconductor, gallium nitride, gallium arsonium, or silicon carbide.
The top of the substrate is provided with a transition layer consisting of one or more of silicon dioxide, silicon carbide and compound semiconductor.
A superlattice very large scale integrated circuit layer established based on two-dimensional electron gas, two-dimensional hole gas and quantum well circuits is formed on the top and the side of the transition layer; wherein,
the superlattice very large scale integrated circuit layer comprises a superlattice sensing element and a very large scale integrated circuit element, and the very large scale integrated circuit element is connected to the periphery of the superlattice sensing element; the superlattice sensing component is formed by combining one or more superlattice sensors. The superlattice sensing element and the ultra-large scale integrated circuit element are not unique in composition mode, and the positions of various elements can be adjusted according to specific implementation. The structure shown in the drawings is only an exemplary embodiment of the present invention.
As shown in fig. 2, the superlattice sensing component includes one or more of a superlattice hall magnetic sensor, a superlattice photoelectric sensor, a superlattice millimeter wave sensor, a superlattice ultrasonic sensor, and a superlattice biological electronic sensor; the structure of the superlattice sensing component is a position structure selected according to actual design, and the structure is not unique. In actual implementation. Other superlattice sensors may be added depending on design requirements such as: gas sensors, position sensors, etc.
The ultra-large scale integrated circuit component is formed by combining an information storage component, an information processing circuit and compatible integrated circuits of millimeter waves, micron waves, submillimeter waves, surface acoustic waves, magnetosensitivities, photoelectrons and bioelectronics.
The principle of the invention is as follows: the invention relates to an intelligent multi-dimensional multifunctional sensing and information processing integrated circuit, which is based on a two-dimensional electronic gas and two-dimensional hole gas superlattice and quantum well integrated circuit and is innovatively constructed, and intelligent functional integration is carried out on various sensors, corresponding information storage and processing circuits and compatible millimeter waves, micron waves, sub-millimeter waves, surface acoustic waves, magnetosensitivities, photoelectrons and bioelectronic integrated circuits.
The invention makes full use of various novel two-dimensional electron and hole air field effect transistors, analog transistors (vertical type and plane type), complementary transistors formed by combining the novel two-dimensional electron and hole air field effect transistors and the analog transistors, and special functional devices, such as: the high-performance intelligent sensing and information processing integrated circuit is designed and manufactured on the basis of a superlattice flash memory, a superlattice capacitor and a varactor, a superlattice resistor and varistor, a superlattice inductor and a superlattice inductor, a magnetic sensor, a photosensitive sensor, a millimeter wave sensor, a micron wave sensor, an acoustic wave sensor, a biological electronic sensor and other novel sensors.
The invention has the beneficial effects that: the invention constructs a multi-dimensional multifunctional sensor and an information processing integrated circuit, and intelligently integrates various sensors, corresponding information storage and processing circuits, compatible millimeter wave sub-millimeter wave, surface acoustic wave, magnetic sensitivity, photoelectron and biological electronic integrated circuits, so that the invention has the characteristics of multifunction, high performance, high reliability, radiation resistance, high and low temperature resistance and the like.
The invention has multiple functions, and can meet the requirements of high and new technical fields of information-based society artificial intelligence, robots, remote measurement and sensing, automatic driving, intelligent medical treatment and the like.
The invention has high performance, and the sensing performance of a novel integrated circuit in various fields of light, magnetism, electricity, radio frequency, sound wave and bioelectricity is improved by orders of magnitude in aspects of sensitivity, speed, frequency spectrum range, spectral width and the like compared with that of a corresponding separation device.
The invention has high reliability because the novel integrated circuit adopts novel two-dimensional electron and hole gas devices, and the high temperature resistance, low temperature resistance and radiation resistance of the novel integrated circuit are greatly superior to those of the traditional silicon and compound integrated circuit.
The invention has flexible design, and can design and manufacture various high-performance sensing and information integrated circuits by utilizing the special properties and special devices of two-dimensional electron gas and two-dimensional hole gas of the superlattice integrated circuit, in particular to novel superlattice millimeter wave submillimeter wave, surface acoustic wave, magnetosensitive, photoelectron and bioelectronic sensors.
The invention has the advantages of simplified process, short production period, reasonable cost and the like. Because the special performance of two-dimensional electron gas and two-dimensional hole gas of the superlattice integrated circuit is utilized to design the integrated circuit components required by industrial application, the process steps can be greatly simplified, for example, the number of photoetching templates and the corresponding process steps can be reduced by thirty percent, so that the production period and the cost can be greatly optimized.
As an embodiment of the invention: when the superlattice sensing component shown in fig. 2 is a combination of multiple superlattice sensors, an isolation layer is constructed around each superlattice sensor by a multi-layer metal and dielectric isolation process, and adjacent superlattice sensors are isolated by the isolation layers; wherein,
the isolation layer includes: the metal isolation layer with the plane shielding and the vertical shielding as the framework, the plane shielding: dielectric layers plus multi-layer metals such as silicon dioxide or silicon nitride or other dielectric layers plus tantalum nitride (TaN) and copper (Cu), titanium nitride (TiN) and aluminum (Al), etc.; vertical shielding: the channel is formed by ion etching process with multiple layers of metal, such as silicon dioxide or silicon nitride or other dielectric layers with tantalum nitride (TaN) and copper (Cu), titanium nitride (TiN) and aluminum (Al). And removing the redundant dielectric and metal layers by adopting ion etching and chemical mechanical polishing processes. A dielectric isolation layer with planar isolation and vertical shielding as framework; plane isolation: a single layer or multi-layer dielectric layer, such as silicon dioxide (SiO2) or silicon nitride (SiN) grown by Plasma Enhanced Chemical Vapor Deposition (PECVD), Chemical Vapor Deposition (CVD), etc., or other dielectric layers, such as intrinsic III-V materials, aluminum nitride (AlN), gallium nitride (GaN), etc. Vertical shielding: the channel may be added with a single layer or multiple layers of dielectric layers, such as silicon dioxide (SiO2) or silicon nitride (SiN) grown by Plasma Enhanced Chemical Vapor Deposition (PECVD), Chemical Vapor Deposition (CVD), etc., or other dielectric layers, such as intrinsic III-V materials, aluminum nitride (AlN), gallium nitride (GaN), etc. And removing the redundant dielectric layer by adopting ion etching and chemical mechanical polishing processes.
When the combination of the plurality of superlattice sensors comprises the superlattice photoelectric sensor, the superlattice ultrasonic sensor or the superlattice bioelectronic sensor, a light waveguide needs to be arranged, wherein a sound waveguide is arranged around the superlattice ultrasonic sensor;
the superlattice sensing component comprises a homogeneous superlattice layer or a heterogeneous superlattice layer, wherein the homogeneous superlattice layer is composed of silicon, gallium nitride and gallium arsonide; the heterogeneous superlattice layer is composed of gallium arsenide nitride, gallium aluminum nitride and gallium nitride and phosphorus nitride.
The present invention also includes other shielding techniques including: the radio frequency and phase shielding process comprises the following steps: the shielding effect is achieved by different radio frequency sensors adopting different frequencies or adopting the same frequency and different phases. Wavelength and phase shielding of light waves: the shielding effect is achieved by adopting different wavelengths or different phases by adopting the same wavelength through different photoelectric sensors.
The principle of the invention is as follows: the invention adopts a multi-layer metal and dielectric isolation process according to the sensing characteristics of a superlattice Hall magnetic sensor, a superlattice photoelectric sensor, a superlattice millimeter wave radar sensor, a superlattice ultrasonic sensor, an ultrasonic radar, a superlattice bioelectronic sensor and the like. For example: metal and medium isolation grooves are required to be designed between the superlattice Hall magnetic sensor and the superlattice millimeter wave radar sensor and other sensors; in the process of sensing information with optical, acoustic and electrical correlation, acoustic-optical-electric information transmission or conversion among a plurality of sensor functional modules needs to be realized, which can be realized through specially designed optical waveguides and acoustic waveguides among the modules. The superlattice photoelectric sensor can be connected with the superlattice bioelectronic sensor through the optical waveguide channel, and the superlattice ultrasonic sensor can be connected with the superlattice millimeter wave sensor through the optical waveguide channel. The dielectric isolation layer between the sensing devices can be formed by a special channel ion etching process and adding an insulating material, such as silicon nitride, plasma sputtering followed by chemical mechanical polishing. The metal isolation (high frequency and surface acoustic wave isolation) layer between devices can be formed into a channel by ion etching process, then plasma sputtering or chemical vapor deposition of titanium silicon nitride (TiSiN) or tantalum nitride (TaN), deposition of metal such as copper (Cu) by electrochemical method (ECD), and removal of the excessive metal on the surface by metal chemical mechanical polishing. The novel intelligent multi-dimensional multifunctional sensing and information processing integrated circuit is not only shielded by metal, dielectric and frequency wavelength and phase designed according to the characteristics of the sensor circuit, but also has various channels designed and manufactured based on the connection requirements among the sensor functional modules, such as metal channels, radio frequency channels, light wave channels, sound wave channels and the like.
The invention has the beneficial effects that: the invention can determine the material and the number of the superlattice layers and the types of the required active and passive elements according to the requirements of the superlattice ultra-large-scale sensing and information processing integrated circuit, and adopts a homogeneous superlattice layer or a heterogeneous superlattice layer. The decision on how to employ the various sensors and corresponding information processing circuit modules to construct the optimized combination is based on the needs of the actual application. The superlattice sensing and information processing integrated circuit which integrates the acoustic, optical, electromagnetic and microwave sensing in the same module can be designed and manufactured according to application requirements such as performance, reliability, cost and the like. The particular design and process of module isolation may be selected based on the characteristics of the sensor module. The special design and process of optical waveguide, acoustic waveguide, other waveguide and microwave waveguide channels between modules can be selected according to the functional relevance requirement of the sensor module. The particular package type and process is designed according to the requirements of the device application.
As an embodiment of the present invention: as shown in fig. 3 and 4, the superlattice hall magnetic sensor is composed of a superlattice intrinsic layer, a superlattice N-type layer, a superlattice low-resistance P-type layer, an N + conductive layer, an N + ohmic contact layer, an ohmic contact layer, a dielectric protection layer and a channel insulation layer; wherein,
the superlattice Hall magnetic sensor at least comprises the following three types: the sensor comprises a prismatic superlattice Hall magnetic sensor, a rectangular superlattice Hall magnetic sensor and a spiral superlattice Hall magnetic sensor;
the prismatic superlattice Hall magnetic sensor and the rectangular superlattice Hall magnetic sensor are n-i-p-i in single-layer structure, and n-i-p-i-n-i-p-i … … in multi-layer repeated structure;
the spiral superlattice Hall magnetic sensor can be used as a calibrator, and can adjust the current flowing through the superlattice N-type layer under the conditions of zero bias, negative bias or positive bias Vpn, wherein the direction of the current determines the direction of a calibration magnetic field.
The principle of the invention is as follows: the superlattice intrinsic layer has the function of isolating electrons in the superlattice N-type layer from holes in the superlattice P-type layer to form electron gas in the superlattice N-type layer and hole gas in the superlattice P-type layer respectively. When the superlattice Hall magnetic sensor is designed, the materials and the layer number of the superlattice, the shape of a device and the position of an ohmic contact point are designed according to the application requirements. Different shapes of sensors are designed. The Hall magnetic sensor can be designed into different Hall magnetic sensors according to a single-layer structure or a multi-layer structure. And at least comprises three types of prismatic superlattice Hall magnetic sensors, rectangular superlattice Hall magnetic sensors and spiral superlattice Hall magnetic sensors.
In one embodiment, when the present invention is designed using heterogeneous superlattice layers, special quantum wells are formed with different forbidden band widths to improve device performance. The N + conductive layer is formed by a low energy ion implantation technique and the ohmic electrode is formed by a plasma sputtering technique, but the plasma sputtering material will depend on the material of the superlattice semiconductor layer, for example, for a gallium nitride material, a titanium aluminum alloy, etc. can be used. The gate insulating layer may be silicon nitride or the like. The layers and components in the same sensor or different sensors need to be isolated by insulating layers. The isolation layer may be formed by a special trench ion etching process plus ion sputtering of an insulating material followed by chemical mechanical polishing. The isolation layer can also be formed by ion implantation to form a PN junction type isolation layer, and if necessary, the maximum performance optimization can be achieved on the same superlattice integrated circuit by adopting a plurality of isolation modes.
The invention has the beneficial effects that: the superlattice Hall magnetic sensor can be designed in a targeted manner according to the application requirements, such as the material and the layer number of the superlattice, the shape of the device and the position of the ohmic contact point. Maximum performance optimization can be achieved using a variety of isolation approaches on the superlattice integrated circuit.
As an embodiment of the present invention: the superlattice photoelectric sensor consists of a superlattice intrinsic layer, a superlattice low-resistance N-type layer, a superlattice P-type layer, an N + conducting layer, a P + conducting layer, an ohmic contact layer, a dielectric protective layer and a channel insulating layer; wherein,
the P + conductive layer is connected with the P type layer;
the N + conductive layer is connected with the N-type layer;
the superlattice photoelectric sensor has a multi-layer repeating structure n-i-p-i-n-i-p-i … ….
The principle of the invention is as follows: by presetting incident light and a light detection region in the design of the superlattice photoelectric sensor, when the incident light reaches the light detection region, electrons and holes generated by light excitation are spatially separated according to the characteristics of the N-i-p-i superlattice, and when a voltage Vnn between N-type regions is applied, photo-generated carriers (electrons) flow to a two-dimensional electron gas accumulation region marked on the figure, also called a two-dimensional electron gas lake, and under a specific reverse bias voltage Vpn, the voltage on a resistor Rpn-1 is in direct proportion to the photo-generated current.
At the same time, the voltage at Rpn-2 resistance is also proportional to the photogenerated carrier concentration. This is the "photovoltaic" mode of the n-i-p-i superlattice photosensor.
In addition, the voltage across the resistor Rnn will be proportional to the density of the two-dimensional electron gas, i.e., the two-dimensional photoelectron current density, flowing through the low-resistance N-type layer of the superlattice, which is the "photoconductive" mode of the N-i-p-i superlattice photosensor.
In the embodiment of the superlattice photoelectric sensor, if a heterogeneous superlattice layer is adopted, such As arsonium gallium (ga) (x) As (1-x) N, gallium aluminum (ga (x) nitrogen Al (1-x) N, gallium phosphide (ga (x) nitrogen Ps (1-x) N and the like, special quantum wells are formed by utilizing different forbidden band widths to improve the performance of the device, and particularly, the wavelength range from ultraviolet to infrared of photoelectric detection can be covered. The N + and P + conductive layers are formed by low-energy ion implantation, ion activation is performed by laser annealing or rapid thermal annealing, and the ohmic electrode is formed by plasma sputtering, but the plasma sputtering material depends on the material of the superlattice semiconductor layer, such as titanium-aluminum alloy for gallium nitride material. The gate insulating layer may be silicon nitride or the like. The devices need to be isolated by an insulating layer. The isolation layer may be formed by a special trench ion etching process plus ion sputtering of an insulating material followed by chemical mechanical polishing. The isolation layer can also be formed by ion implantation to form a PN junction type isolation layer, and if needed, the maximum performance optimization can be achieved on the same superlattice integrated circuit by adopting various isolation modes.
The invention has the beneficial effects that: a photosensor can be integrated by the present invention. Multiple isolation approaches can be employed on the same superlattice integrated circuit to achieve maximum performance optimization. Both "photoconductive" and "photovoltaic" modes can be achieved.
As an embodiment of the invention: as shown in fig. 5 and fig. 6, the superlattice millimeter wave sensor is composed of the superlattice millimeter wave radar sensor which comprises an information processor, an analog-to-digital converter, a preamplifier, a mixer, a local oscillator, a transmitting antenna and a receiving antenna; wherein,
the information processor, analog-to-digital converter, preamplifier, mixer and local oscillator are based on doped N-channel N-i-P-i superlattice field effect transistors, doped P-channel N-i-P-i superlattice field effect transistors, superlattice vertical type P-N-P bipolar transistors, superlattice planar type P-N-P bipolar transistors, the super-lattice vertical type N-P-N bipolar transistor, the super-lattice plane type N-P-N bipolar transistor, the P-i-N-i super-lattice diode and the PN junction capacitance variable capacitor, the super-lattice Schottky diode, the N-i-P-i super-lattice resistor and rheostat, the N-i-P-i super-lattice inductor and the variable inductor and the N-i-P-i super-lattice flash memory are constructed in a combination mode;
as shown in fig. 7, the superlattice millimeter wave sensor comprises a superlattice millimeter wave radar sensor having a receiving antenna and a transmitting antenna; wherein,
the receiving antenna comprises a non-grating receiving antenna and a grating receiving antenna;
the grating receiving antenna comprises a grating and a waveguide;
the waveguide forming process includes: a bottom covering layer for growing the waveguide is arranged on the transition layer, an optical waveguide layer is grown on the bottom covering layer, and the waveguide is formed on a growing top covering layer of the optical waveguide layer;
the forming process of the grating comprises the following steps: and depositing a grating film on the covering layer at the top of the optical waveguide layer, determining the shape and the size of the grating through a photoetching process, and etching the grating by plasma etching.
The principle of the invention is as follows: the doped N-channel N-i-P-i superlattice field effect transistor consists of a doped superlattice intrinsic layer, a doped superlattice N-type layer, a superlattice intrinsic layer, a doped superlattice P-type layer, an N + conducting layer and the like. To meet the performance requirements of integrated circuits, more layers of repeating structures, such As p-i-N-i-p-i-N-i-p-i, can be designed, and not only homogeneous superlattice layers, such As silicon, gallium nitride (GaN), and gallium arsonium (GaAs), but also heterogeneous superlattice layers, such As gallium arsonium (ga) (x) As (1-x) N, gallium aluminum (ga) (x) Al (1-x) N, gallium phosphorus nitride (ga) (x) Ps (1-x) N, etc., can be used to form special quantum wells with different forbidden bandwidth to improve the device performance. The P + conductive layer is formed by a low energy ion implantation technique and the ohmic electrode is formed by a plasma sputtering technique, but the plasma sputtering material will depend on the material of the superlattice semiconductor layer, for example, for gallium nitride materials, titanium aluminum alloy and the like can be generally used. The gate insulating layer may be silicon nitride or the like. The devices need to be isolated by an insulating layer. The isolation layer may be formed by a special trench ion etching process plus ion sputtering of an insulating material followed by chemical mechanical polishing. The isolation layer can also be formed by ion implantation to form a PN junction type isolation layer, and if needed, the maximum performance optimization can be achieved on the same superlattice integrated circuit by adopting various isolation modes.
The doped P-channel N-i-P-i superlattice field effect transistor consists of a doped superlattice intrinsic layer, a doped superlattice N-type layer, a superlattice intrinsic layer, a doped superlattice P-type layer, a P + conducting layer and the like. In order to meet the performance requirements of integrated circuits, more layers of repeating structures, such As N-i-p-i-N-i, can be designed, not only homogeneous superlattice layers, such As silicon, gallium nitride (GaN) and gallium arsonium (GaAs), but also heterogeneous superlattice layers, such As gallium arsonium (ga) (x) As (1-x) N, gallium aluminum (ga (x) Al (1-x) N, gallium phosphorus (ga) (x) Ps (1-x) N, and the like, can be adopted, and special quantum wells are formed by utilizing different forbidden bandwidth to improve the device performance. The P + conductive layer is formed by a low energy ion implantation technique and the ohmic electrode is formed by a plasma sputtering technique, but the plasma sputtering material will depend on the material of the superlattice semiconductor layer, for example, for gallium nitride materials, titanium aluminum alloys are generally used, etc. The gate insulating layer may be silicon nitride or the like. The devices need to be isolated by an insulating layer. The isolation layer may be formed by a special channel ion etch process plus sputter deposition of insulating material ions followed by chemical mechanical polishing. The isolation layer can also be formed by ion implantation to form a PN junction type isolation layer, and if necessary, the maximum performance optimization can be achieved on the same superlattice integrated circuit by adopting a plurality of isolation modes.
The invention has the beneficial effects that: the invention can realize the design of different superlattice millimeter wave sensors by the P-channel doped N-i-P-i superlattice field effect transistor and the N-channel doped N-i-P-i superlattice field effect transistor.
As an embodiment of the invention: as shown in fig. 9, the superlattice ultrasonic sensor is composed of a gate electrode, a superlattice N-type layer, a piezoelectric layer, a back electrode and a piezoelectric film;
the superlattice ultrasonic sensor comprises an ultrasonic transmitting mode and an ultrasonic receiving mode; wherein,
in the ultrasonic transmission mode: applying reverse bias between a gate electrode and a source electrode of the superlattice ultrasonic sensor to enable an interface of a superlattice N-type layer and a piezoelectric layer to be in a depletion state, applying a modulation radio frequency signal between a back electrode and the gate electrode, and generating an acoustic wave signal by the piezoelectric film when the frequency of the radio frequency signal is consistent with the resonance frequency of the piezoelectric film;
in the ultrasonic wave reception mode: and reverse bias is applied between a gate electrode and a source electrode of the superlattice ultrasonic sensor, so that the interface of the superlattice N-type layer and the piezoelectric layer is in a depletion state, a two-dimensional carrier flow corresponding to the frequency of an acoustic wave signal is generated at the interface of the piezoelectric film layer and the superlattice N-type layer by the acoustic wave signal received by the piezoelectric film, and the current is amplified by the superlattice preamplifier.
As an embodiment of the invention, as shown in FIG. 9: the superlattice bioelectronic sensor comprises a superlattice bioelectronic impedance sensor (a diagram of fig. 9) and a superlattice biological spectrum sensor (b diagram and c diagram of fig. 9); wherein,
as shown in fig. 9 (a): the superlattice biological electronic impedance sensor comprises a superlattice intrinsic layer, a superlattice N-type layer, a superlattice P-type layer, a P + conducting layer, a grid insulating layer, an ohmic contact layer, a dielectric protective layer, a channel insulating layer and a biological medium layer; the superlattice intrinsic layer, the superlattice N-type layer, the superlattice P-type layer, the P + conducting layer, the grid insulating layer, the ohmic contact layer, the dielectric protective layer and the channel insulating layer are symmetrically distributed on two sides of the biological medium layer; the ohmic contact layer comprises a source electrode, a drain electrode, a first grid electrode and a second grid electrode; the source electrode and the drain electrode are symmetrically distributed on two sides of the biological medium layer; the first grid and the second grid are symmetrically distributed on two sides of the biological medium layer;
as shown in fig. 9(b) (c), the superlattice bio-spectral sensor comprises a superlattice intrinsic layer, a superlattice N-type layer, a superlattice P-type layer, an N + conductive layer, a P + conductive layer, a first superlattice N + layer, a second superlattice N + layer, a first superlattice P + layer, a second superlattice P + layer, an ohmic contact layer, a dielectric protective layer, a channel insulating layer, a bio-dielectric channel, a photoelectric sensing receiving region and a light emitting region; the photoelectric sensing receiving area and the light emitting area are symmetrically distributed on two sides of the biological medium channel; the superlattice intrinsic layer is provided with two layers which are respectively and symmetrically distributed on two sides of the biological medium layer with the second superlattice N + layer and the second superlattice P + layer; the superlattice N-type layer and the first superlattice N + layer are distributed on two sides of the biological medium layer; the superlattice P type layer and the first superlattice P + layer are distributed on two sides of the biological medium layer.
The principle of the invention is as follows: a novel sensing mode of the superlattice biological electronic sensor is to design and manufacture a special superlattice two-dimensional electronic device by utilizing the electromagnetic impedance characteristics of human or animal body fluid, such as blood, saliva and other biological fluids. The working principle of the superlattice bioelectronic impedance sensor is as follows: the ac impedance of a superlattice biosensing field effect transistor, such as gate-source impedance, gate-drain impedance, gate 1-gate 2 impedance, source-drain impedance, etc., will be strongly correlated with the characteristics of the human body or other biological body fluids and will vary with voltage and frequency. The impedance model of frequency and voltage change of various body fluids is established by using normal body fluids of a human body or other organisms in a laboratory, and the judgment of the normality or abnormality of the body fluids is obtained by analyzing and comparing a test value with an impedance model curve during testing of the human body and the organisms.
The working principle of the spectrum sensing mode of the superlattice bioelectronic sensor is briefly described as follows: the superlattice bioelectronic spectrum sensor consists of a Light Emitting Diode (LED) or a laser diode which consists of a high-doped N-type layer and a high-doped P-type layer, a biological medium or biological electrolyte channel for accommodating body fluid of a human body or other organisms and a photoelectric receiving diode which consists of a superlattice N-type layer, an intrinsic type layer and a P-type layer. The materials and the compositions of a highly doped superlattice highly doped N-type layer and a highly doped P-type layer of a Light Emitting Diode (LED) or a laser diode are selected according to the characteristic absorption spectrum of biological body fluid, such as forbidden bandwidth, and a homogeneous or heterogeneous structure is adopted. When the sensor works, the light emitting diode or the laser diode is in a forward bias state, the superlattice photodiode is in a reverse bias state, emitted light penetrates through the liquid layer of the body fluid and is received by the high-sensitivity photodiode, and transmitted spectrum information of the biological body fluid is sent to the next-stage superlattice preamplifier for information processing.
The invention has the beneficial effects that: the method can be used for testing human bodies and organisms, and establishing impedance models of frequency and voltage changes of various body fluids by using normal body fluids of the human bodies or other organisms in laboratory implementation. The light absorption and transmission characteristics of human or animal body fluids, such as blood, saliva and other biological fluids, are utilized.
As an embodiment of the present invention: the information storage component, the information processing circuit and the compatible millimeter wave, micron wave, sub-millimeter wave, surface acoustic wave, magnetic sensitivity, photoelectron and bioelectronic integrated circuit of the super large scale integrated circuit component are all composed of a doped N-channel N-i-P-i superlattice field effect transistor, a doped P-channel N-i-P-i superlattice field effect transistor, a superlattice vertical P-N-P bipolar transistor, a superlattice planar P-N-P bipolar transistor, a superlattice vertical N-P-N bipolar transistor, a superlattice planar N-P-N bipolar transistor, a P-i-N-i superlattice diode, a PN junction capacitance variable capacitor, a superlattice base diode, an N-i-P-i superlattice resistor and varistor, The n-i-p-i superlattice inductor and the inductor are combined with one or more of the n-i-p-i superlattice flash memory; the structure of the invention is not unique, and the structure is adjusted according to design requirements.
The N-channel doped N-i-P-i superlattice field effect transistor consists of a superlattice N-type layer, a superlattice intrinsic layer, a superlattice P-type layer, a P + conducting layer, a grid insulating layer, a dielectric protective layer, an ohmic contact layer and a channel insulating layer; digital high-frequency high-gain low-noise preamplifier, digital operational amplifier and other digital devices for various sensors and P-channel doped superlattice field effect transistor to construct complementary device
The P-channel doped N-i-P-i superlattice field effect transistor consists of a superlattice P-type layer, a superlattice intrinsic layer, a superlattice N-type layer, an N + conducting layer, a grid insulating layer, a dielectric protective layer, an ohmic contact layer and a channel insulating layer; the digital high-frequency high-gain low-noise preamplifier for various sensors, the digital operational amplifier and other digital devices construct complementary devices with the doped N-channel superlattice field effect transistor.
The superlattice vertical P-N-P bipolar transistor consists of a superlattice collector P-type layer, a superlattice emitter P-type layer, a superlattice base N-type layer, an N + conducting layer, a P + conducting layer, a dielectric protective layer, an ohmic contact layer and a channel insulating layer; the analog high-gain low-noise preamplifier, the analog operational amplifier and other analog devices used for various sensors, such as an analog-digital/digital-analog (AD/DA) or a digital-analog/analog-digital (DA/AD) device and the like, and the complementary device is constructed by the analog high-gain low-noise preamplifier, the analog operational amplifier and other analog devices and the superlattice vertical N-P-N bipolar transistor.
The superlattice planar P-N-P bipolar transistor consists of a superlattice collector P-type region, a superlattice emitter P-type region, a superlattice base N-type region, a dielectric protection layer, an ohmic contact layer and a channel insulation layer; analog high-gain low-noise preamplifier, analog operational amplifier and other analog devices for various sensors, such as analog-to-digital/digital-to-analog (AD/DA) or digital-to-analog/analog-to-analog (DA/AD), and the like, and superlattice planar N-P-N bipolar transistor to construct complementary device
The superlattice vertical N-P-N bipolar transistor is composed of a superlattice collector N-type layer, a superlattice emitter N-type layer, a superlattice base P-type layer, an N + conducting layer, a P + conducting layer, a dielectric protection layer, an ohmic contact layer and a channel insulating layer. The analog high-gain low-noise preamplifier, the analog operational amplifier and other analog devices used for various sensors, such as an analog-digital/digital-analog (AD/DA) or a digital-analog/analog-digital (DA/AD) device and the like, and the complementary device is constructed by the analog high-gain low-noise preamplifier, the analog operational amplifier and other analog devices and the superlattice vertical type P-N-P bipolar transistor.
The superlattice planar N-P-N bipolar transistor consists of a superlattice collector N-type layer, a superlattice emitter N-type layer, a superlattice base P-type layer, a dielectric protection layer, an ohmic contact layer and a channel insulation layer; the super-lattice planar P-N-P bipolar transistor is used for constructing a complementary device with an analog high-gain low-noise preamplifier, an analog operational amplifier and other analog devices of various sensors, such as an analog-digital/digital-analog (AD/DA) or a digital-analog/analog-digital (DA/AD) and the like.
The P-i-N-i superlattice diode and the PN junction capacitance variable capacitor consist of a superlattice P-type layer, a superlattice intrinsic layer, a superlattice low-resistance N-type layer, a P + conducting layer, a grid insulating layer, a dielectric protective layer, an ohmic contact layer and a channel insulating layer; the basic elements of super-lattice very large scale integrated circuit are used in rectification, photoelectric detection, analog operational amplifier, etc.
The superlattice Schottky diode consists of a superlattice N-type layer, a superlattice base N-type layer, a Schottky contact layer, a superlattice intrinsic layer, an N + conducting layer, a dielectric protection layer, an ohmic contact layer and a channel insulating layer; used for constructing an analog amplifier, a vibrator and the like. The superlattice millimeter wave sensor is manufactured by an integrated circuit through designing the superlattice Schottky diode.
The N-i-P-i superlattice resistor and rheostat consists of a superlattice P-type layer, a superlattice low-resistance N-type layer, a superlattice intrinsic layer, an N + conducting layer, a P + conducting layer, a dielectric protection layer, an ohmic contact layer and a channel insulating layer; the method is used for constructing special sensors, such as millimeter wave sensors and the like.
The N-i-P-i superlattice inductor and the N-i-P-i superlattice inductor comprise a superlattice P-type layer, a superlattice low-resistance N-type layer, a superlattice intrinsic layer, an N + conducting layer, a P + conducting layer, a dielectric protection layer, an ohmic contact layer and a channel insulating layer; the N + conducting layer and the P + conducting layer of the N-i-P-i superlattice inductor and the variable inductor are opposite to the N + conducting layer and the P + conducting layer of the N-i-P-i superlattice resistor and the variable resistor in direction; for constructing analogue amplifiers, oscillators , or the like
The N-i-P-i superlattice flash memory comprises a P-channel-doped N-i-P-i superlattice field effect ferroelectric transistor flash memory and an N-channel-doped N-i-P-i superlattice field effect ferroelectric transistor flash memory, and is used for accessing sensor information; wherein,
the P-channel-doped N-i-P-i superlattice field effect ferroelectric transistor flash memory consists of a superlattice N-type layer, a superlattice low-resistance P-type layer, a superlattice intrinsic layer, a ferroelectric thin film layer, a P + conducting layer, a dielectric protection layer, an ohmic contact layer and a channel insulation layer;
the N-channel-doped N-i-P-i superlattice field effect ferroelectric transistor flash memory consists of a reverse superlattice N-type layer, a superlattice low-resistance P-type layer, a superlattice intrinsic layer, a ferroelectric thin film layer, a metal contact layer, a P + conducting layer, a dielectric protection layer, an ohmic contact layer and a channel insulating layer; wherein the metal contact layer is over the ferroelectric thin film layer.
As an embodiment of the present invention: the substrate, the transition layer and the superlattice very large scale integrated circuit layer are all manufactured by one or more of the manufacturing processes of thin film growth, photoetching, ion etching, channel filling based on insulating material growth, chemical mechanical polishing, ion implantation, ion activation, metal deposition, integrated circuit cutting, integrated circuit packaging, integrated circuit testing, chemical corrosion cleaning, bump packaging, isolation groove photoetching and isolation groove ion etching.
As an embodiment of the present invention: the super large scale integrated circuit component is connected to the periphery of the superlattice sensing component and comprises the following processes:
step 1: the ultra-large scale integrated circuit component obtains a driving current according to the electric field intensity of the superlattice sensing component, and the driving current I can be expressed as:
Figure GDA0003502920580000261
wherein Q represents the number of charges, E represents the electric field intensity of the superlattice sensing element, phi represents the dielectric constant, and sigma represents the spatial permeability;
step 2: the superlattice sensing component obtains a starting current according to the electric field intensity, and the starting current IqCan be expressed as:
Figure GDA0003502920580000262
wherein q represents an amount of charge, V represents a starting voltage, and N represents an energy level of a quantum well;
and step 3: when the starting current is compared with the driving current, and when the starting current is equal to the driving current, the ultra-large scale integrated circuit component is connected to the periphery of the superlattice sensing component to provide the starting current for the superlattice sensing component.
According to the principle, when the driving voltage provided by the ultra-large scale integrated circuit component is consistent with the starting current of the superlattice sensing component, the superlattice sensing component is driven to work. The current that can effectual provide superlattice sensing element and part adaptation, the energy saving also can regard as the locking of superlattice sensing element and part to the current contrast process, prevents that superlattice sensing element and part from being in the starting condition constantly.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.

Claims (10)

1. An intelligent multi-dimensional multifunctional sensing and information processing integrated circuit, comprising: the device comprises a substrate, a transition layer and a superlattice very large scale integrated circuit layer, wherein the transition layer is arranged between the substrate and the superlattice very large scale integrated circuit layer; wherein,
the substrate is composed of silicon and a compound semiconductor;
the top of the substrate is provided with a transition layer consisting of one or more of silicon dioxide and compound semiconductor;
a superlattice very large scale integrated circuit layer established based on a two-dimensional electron gas, a two-dimensional hole gas and a quantum well circuit is formed on the top and the side of the transition layer; wherein,
the superlattice very large scale integrated circuit layer comprises a superlattice sensing element and a very large scale integrated circuit element, and the very large scale integrated circuit element is connected to the periphery of the superlattice sensing element;
the superlattice sensing component is formed by combining a plurality of superlattice sensors;
the superlattice sensor at least comprises a combination of a superlattice Hall magnetic sensor, a superlattice photoelectric sensor, a superlattice millimeter wave and micron wave sensor, a superlattice ultrasonic sensor and a superlattice biological electronic sensor;
the ultra-large scale integrated circuit component is formed by combining an information storage component, an information processing circuit and compatible integrated circuits of millimeter waves, micron waves, submillimeter waves, surface acoustic waves, magnetosensitivities, photoelectrons and bioelectronics.
2. An intelligent multi-dimensional multifunctional sensing and information processing integrated circuit according to claim 1, wherein when the superlattice sensing component is a combination of a plurality of superlattice sensors, an isolation layer is constructed around each superlattice sensor through a multi-layer metal and dielectric isolation process, and adjacent superlattice sensors are isolated through the isolation layer; wherein,
the isolation layer includes: the metal isolation layer takes the plane shield and the vertical shield as the framework, and the dielectric isolation layer takes the plane shield and the vertical shield as the framework;
the combination of the plurality of superlattice sensors comprises the superlattice photoelectric sensor, the superlattice ultrasonic sensor or the superlattice biological electronic sensor, wherein a sound wave conduction channel is further arranged on the periphery of the superlattice ultrasonic sensor;
the superlattice sensing component comprises a homogeneous superlattice layer or a heterogeneous superlattice layer, and the homogeneous superlattice layer at least comprises silicon, gallium nitride and gallium arsenide; the heterogeneous superlattice layer at least comprises gallium arsenide nitride, gallium aluminum nitride and gallium nitride and phosphorus nitride.
3. An intelligent multi-dimensional multifunctional sensing and information processing integrated circuit according to claim 1, wherein the superlattice hall magnetic sensor comprises components of a superlattice intrinsic layer, a superlattice N-type layer, a superlattice low-resistance P-type layer, an N + conducting layer, an ohmic contact layer, a dielectric protection layer and a channel insulating layer; wherein,
the superlattice Hall magnetic sensor also has the following three structures: the sensor comprises a prismatic superlattice Hall magnetic sensor, a rectangular superlattice Hall magnetic sensor and a spiral superlattice Hall magnetic sensor;
the structures of the prismatic superlattice Hall magnetic sensor and the rectangular superlattice Hall magnetic sensor are n-i-p-i;
the spiral superlattice Hall magnetic sensor is used as a calibrator, and can regulate the current flowing through the superlattice N-type layer under zero bias, negative bias or positive bias Vpn, and the direction of the current determines the direction of a calibration magnetic field.
4. An intelligent multi-dimensional multifunctional sensing and information processing integrated circuit according to claim 1, wherein the superlattice photoelectric sensor comprises a superlattice intrinsic layer, a superlattice low-resistance N-type layer, a superlattice P-type layer, an N + conductive layer, a P + conductive layer, an ohmic contact layer, a dielectric protection layer and a channel insulation layer; wherein,
the P + conductive layer is connected with the P type layer;
the N + conductive layer is connected with the N-type layer;
the superlattice photoelectric sensor also has a multi-layer repeating structure n-i-p-i-n-i-p-i … ….
5. An intelligent multi-dimensional multifunctional sensing and information processing integrated circuit according to claim 1, wherein the superlattice millimeter wave sensor is composed of the superlattice millimeter wave radar sensor including an information processor, an analog-to-digital converter, a preamplifier, a mixer, a local oscillator, a transmitting antenna and a receiving antenna; wherein,
the information processor, the analog-to-digital converter, the preamplifier, the frequency mixer and the local oscillator are all constructed on the basis of one or more combinations of a doped N-channel N-i-P-i superlattice field effect transistor, a doped P-channel N-i-P-i superlattice field effect transistor, a superlattice vertical P-N-P bipolar transistor, a superlattice planar P-N-P bipolar transistor, a superlattice vertical N-P-N bipolar transistor, a superlattice planar N-P-N bipolar transistor, a P-i-N-i superlattice diode, a PN junction capacitance variable capacitor, a superlattice Schottky diode, an N-i-P-i superlattice resistor and rheostat, an N-i-P-i superlattice inductor and rheostat and N-i-P-i superlattice flash memory;
the superlattice millimeter wave sensor comprises a superlattice millimeter wave radar sensor having a receiving antenna and a transmitting antenna; wherein,
the receiving antenna comprises a non-grating receiving antenna and a grating receiving antenna;
the grating receiving antenna comprises a grating and a waveguide;
the waveguide forming process includes: a bottom covering layer for growing the waveguide is arranged on the transition layer, an optical waveguide layer is grown on the bottom covering layer, and a top covering layer is grown on the optical waveguide layer to form the waveguide;
the forming process of the grating comprises the following steps: and depositing a grating film on the covering layer at the top of the optical waveguide layer, determining the shape and the size of the grating through a photoetching process, and etching the grating by plasma etching.
6. An intelligent multi-dimensional multifunctional sensing and information processing integrated circuit according to claim 1, wherein the superlattice ultrasonic sensor is composed of a gate electrode, a superlattice N-type layer, a piezoelectric layer, a back electrode and a piezoelectric film;
the superlattice ultrasonic sensor comprises an ultrasonic transmitting mode and an ultrasonic receiving mode; wherein,
in the ultrasonic transmission mode: applying reverse bias between a gate electrode and a source electrode of the superlattice ultrasonic sensor to enable an interface of a superlattice N-type layer and a piezoelectric layer to be in a depletion state, applying a modulation radio frequency signal between a back electrode and the gate electrode, and generating an acoustic wave signal by the piezoelectric film when the frequency of the radio frequency signal is consistent with the resonance frequency of the piezoelectric film;
in the ultrasonic wave reception mode: and applying reverse bias between a gate electrode and a source electrode of the superlattice ultrasonic sensor to enable an interface of the superlattice N-type layer and the piezoelectric layer to be in a depletion state, wherein a two-dimensional carrier flow corresponding to the frequency of an acoustic wave signal is generated at the interface of the piezoelectric film layer and the superlattice N-type layer by the acoustic wave signal received by the piezoelectric film, and the current is amplified by the superlattice preamplifier.
7. An intelligent multi-dimensional multifunctional sensing and information processing integrated circuit according to claim 1, wherein the superlattice bioelectronic sensor comprises a superlattice bioelectronic impedance sensor and a superlattice biological spectral sensor; wherein,
the superlattice biological electronic impedance sensor comprises a superlattice intrinsic layer, a superlattice N-type layer, a superlattice P-type layer, a P + conducting layer, a grid insulating layer, an ohmic contact layer, a dielectric protective layer, a channel insulating layer and a biological medium layer; the superlattice intrinsic layer, the superlattice N-type layer, the superlattice P-type layer, the P + conducting layer, the grid insulating layer, the ohmic contact layer, the dielectric protective layer and the channel insulating layer are symmetrically distributed on two sides of the biological medium layer; the ohmic contact layer comprises a source electrode, a drain electrode, a first grid electrode and a second grid electrode; the source electrode and the drain electrode are symmetrically distributed on two sides of the biological medium layer; the first grid and the second grid are symmetrically distributed on two sides of the biological medium layer;
the superlattice biological spectrum sensor comprises a superlattice intrinsic layer, a superlattice N-type layer, a superlattice P-type layer, an N + conducting layer, a P + conducting layer, a first superlattice N + layer, a second superlattice N + layer, a first superlattice P + layer, a second superlattice P + layer, an ohmic contact layer, a dielectric protection layer, a channel insulating layer, a biological medium channel, a photoelectric sensing receiving area and a light emitting area; the photoelectric sensing receiving area and the light emitting area are symmetrically distributed on two sides of the biological medium channel; the superlattice intrinsic layer is provided with two layers which are respectively and symmetrically distributed on two sides of the biological medium layer with the second superlattice N + layer and the second superlattice P + layer; the superlattice N-type layer and the first superlattice N + layer are distributed on two sides of the biological medium layer; the superlattice P type layer and the first superlattice P + layer are distributed on two sides of the biological medium layer.
8. An intelligent multi-dimensional multifunctional sensing and information processing integrated circuit as claimed in claim 1, wherein the information storage component, the information processing circuit and the compatible millimeter wave, micron wave, sub-millimeter wave, surface acoustic wave, magnetosensitive, photoelectronic and bioelectronic integrated circuit of the vlsi integrated circuit component are composed of a doped N-channel N-i-P-i superlattice field effect transistor, a doped P-channel N-i-P-i superlattice field effect transistor, a superlattice vertical P-N-P bipolar transistor, a superlattice planar P-N-P bipolar transistor, a superlattice vertical N-P-N bipolar transistor, a superlattice planar N-P-N bipolar transistor, a P-i-N-i superlattice diode, a PN junction capacitance varactor, The super lattice Schottky diode, the n-i-p-i super lattice resistor and rheostat, the n-i-p-i super lattice inductor and rheostat and the n-i-p-i super lattice flash memory are formed by one or a plurality of combinations; wherein,
the N-channel-doped N-i-P-i superlattice field effect transistor consists of a superlattice N-type layer, a superlattice intrinsic layer, a superlattice P-type layer, a P + conducting layer, a grid insulating layer, a dielectric protective layer, an ohmic contact layer and a channel insulating layer;
the P-channel-doped N-i-P-i superlattice field effect transistor consists of a superlattice P-type layer, a superlattice intrinsic layer, a superlattice N-type layer, an N + conducting layer, a grid insulating layer, a dielectric protective layer, an ohmic contact layer and a channel insulating layer;
the superlattice vertical P-N-P bipolar transistor consists of a superlattice collector P-type layer, a superlattice emitter P-type layer, a superlattice base N-type layer, an N + conducting layer, a P + conducting layer, a dielectric protective layer, an ohmic contact layer and a channel insulating layer;
the superlattice planar P-N-P bipolar transistor consists of a superlattice collector P-type region, a superlattice emitter P-type region, a superlattice base N-type region, a dielectric protection layer, an ohmic contact layer and a channel insulation layer;
the superlattice vertical N-P-N bipolar transistor consists of a superlattice collector N-type layer, a superlattice emitter N-type layer, a superlattice base P-type layer, an N + conducting layer, a P + conducting layer, a dielectric protective layer, an ohmic contact layer and a channel insulating layer;
the superlattice planar N-P-N bipolar transistor consists of a superlattice collector N-type layer, a superlattice emitter N-type layer, a superlattice base P-type layer, a dielectric protection layer, an ohmic contact layer and a channel insulation layer;
the P-i-N-i superlattice diode and the PN junction capacitance variable capacitor consist of a superlattice P-type layer, a superlattice intrinsic layer, a superlattice low-resistance N-type layer, a P + conducting layer, a grid insulating layer, a dielectric protective layer, an ohmic contact layer and a channel insulating layer;
the superlattice Schottky diode consists of a superlattice N-type layer, a superlattice base N-type layer, a Schottky contact layer, a superlattice intrinsic layer, an N + conducting layer, a dielectric protection layer, an ohmic contact layer and a channel insulating layer;
the N-i-P-i superlattice resistor and rheostat consists of a superlattice P-type layer, a superlattice low-resistance N-type layer, a superlattice intrinsic layer, an N + conducting layer, a P + conducting layer, a dielectric protection layer, an ohmic contact layer and a channel insulating layer;
the N-i-P-i superlattice inductor and the N-i-P-i superlattice inductor comprise a superlattice P-type layer, a superlattice low-resistance N-type layer, a superlattice intrinsic layer, an N + conducting layer, a P + conducting layer, a dielectric protection layer, an ohmic contact layer and a channel insulating layer; the N-i-P-i superlattice flash memory comprises a P-channel-doped N-i-P-i superlattice field effect ferroelectric transistor flash memory and an N-channel-doped N-i-P-i superlattice field effect ferroelectric transistor flash memory; wherein,
the P-channel-doped N-i-P-i superlattice field effect ferroelectric transistor flash memory consists of a superlattice N-type layer, a superlattice low-resistance P-type layer, a superlattice intrinsic layer, a ferroelectric thin film layer, a P + conducting layer, a dielectric protection layer, an ohmic contact layer and a channel insulation layer;
the N-channel-doped N-i-P-i superlattice field effect ferroelectric transistor flash memory consists of a reverse superlattice N-type layer, a superlattice low-resistance P-type layer, a superlattice intrinsic layer, a ferroelectric thin film layer, a metal contact layer, a P + conducting layer, a dielectric protection layer, an ohmic contact layer and a channel insulating layer; wherein the metal contact layer is over the ferroelectric thin film layer.
9. An intelligent multi-dimensional multifunctional sensing and information processing integrated circuit according to claim 1, wherein the substrate, the transition layer and the superlattice very large scale integrated circuit layer are all manufactured by one or more of thin film growth, photolithography, ion etching, trench filling based on grown insulating materials, chemical mechanical polishing, ion implantation, ion activation, metal deposition, integrated circuit dicing, integrated circuit packaging, integrated circuit testing, chemical etch cleaning, bump packaging, isolation trench lithography and isolation trench ion etching.
10. An intelligent multi-dimensional multifunctional sensing and information processing integrated circuit as claimed in claim 1, wherein said vlsi device is connected to the periphery of said superlattice sensing device, and has the following processes:
step 1: the ultra-large scale integrated circuit component obtains a driving current according to the electric field intensity of the superlattice sensing component, and the driving current I can be expressed as:
Figure FDA0003669296210000071
wherein Q represents the number of charges, E represents the electric field intensity of the superlattice sensing element, phi represents the dielectric constant, and sigma represents the spatial permeability;
step 2: the superlattice sensing component obtains a starting current according to the electric field intensity, and the starting current IqCan be expressed as:
Figure FDA0003669296210000072
wherein q represents an amount of charge, V represents a starting voltage, and N represents an energy level of a quantum well;
and step 3: when the starting current is compared with the driving current, and when the starting current is equal to the driving current, the ultra-large scale integrated circuit component is connected to the periphery of the superlattice sensing component to provide the starting current for the superlattice sensing component.
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