CN111370332B - Packaging method of camera shooting assembly - Google Patents

Packaging method of camera shooting assembly Download PDF

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Publication number
CN111370332B
CN111370332B CN201811605542.6A CN201811605542A CN111370332B CN 111370332 B CN111370332 B CN 111370332B CN 201811605542 A CN201811605542 A CN 201811605542A CN 111370332 B CN111370332 B CN 111370332B
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plastic package
layer
photosensitive chip
plastic
packaging
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CN111370332A (en
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秦晓珊
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Ningbo Semiconductor International Corp
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Ningbo Semiconductor International Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/564—Details not otherwise provided for, e.g. protection against moisture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469—Assemblies, i.e. hybrid integration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto

Abstract

A packaging method of a camera shooting assembly comprises the following steps: providing a first bearing substrate, wherein a functional element and a photosensitive unit are temporarily bonded on the first bearing substrate, the photosensitive unit comprises a photosensitive chip bonded on the first bearing substrate and an optical filter attached on the photosensitive chip, the photosensitive chip and the functional element are both provided with a welding pad, the welding pads of the photosensitive chip and the functional element are both back to the first bearing substrate, and the exposed area of the optical filter is a plastic package area; carrying out selective spraying treatment, spraying a plastic packaging material to the plastic packaging area and carrying out curing treatment on the plastic packaging material to form a plastic packaging layer positioned in the plastic packaging area, covering the first bearing substrate, the photosensitive chip and the functional element and also covering the side wall of the optical filter; forming a rewiring structure on one side of the plastic packaging layer close to the optical filter, and electrically connecting the photosensitive chip and a welding pad of the functional element; and removing the first bearing substrate. The invention improves the performance of the camera shooting assembly while improving the packaging efficiency.

Description

Packaging method of camera shooting assembly
Technical Field
The embodiment of the invention relates to the field of lens modules, in particular to a packaging method of a camera shooting assembly.
Background
With the continuous improvement of living standard of people, amateur life is richer, and photography becomes a common means for people to record trips and various daily lives, so that electronic devices (such as mobile phones, tablet computers, cameras and the like) with shooting functions are increasingly applied to daily life and work of people, and electronic devices with shooting functions become an important tool which is indispensable to people nowadays.
Electronic devices with a shooting function are usually provided with a lens module, and the design level of the lens module is one of the important factors for determining the shooting quality. The lens module generally includes a camera module having a light-sensing chip and a lens module fixed above the camera module for forming an image of a subject.
In addition, in order to improve the imaging capability of the lens module, a photosensitive chip with a larger imaging area is required, and a passive element such as a resistor and a capacitor and a peripheral chip are usually disposed in the lens module.
Disclosure of Invention
The embodiment of the invention aims to provide a method for packaging a camera shooting assembly, which improves the performance of the camera shooting assembly while improving the packaging efficiency.
To solve the above problem, an embodiment of the present invention provides a method for packaging a camera module, including: providing a first bearing substrate, wherein a functional element and a photosensitive unit are temporarily bonded on the first bearing substrate, the photosensitive unit comprises a photosensitive chip bonded on the first bearing substrate and an optical filter attached on the photosensitive chip, the photosensitive chip is provided with a welding pad facing the optical filter, the functional element is provided with a welding pad, the photosensitive chip and the welding pad of the functional element are back to the first bearing substrate, and the exposed area of the optical filter is a plastic package area; carrying out selective spraying treatment, spraying a plastic packaging material to the plastic packaging area, and carrying out curing treatment on the plastic packaging material to form a plastic packaging layer located in the plastic packaging area, wherein the plastic packaging layer covers the first bearing substrate, the photosensitive chip and the functional element and also covers the side wall of the optical filter; forming a rewiring structure on one side of the plastic packaging layer close to the optical filter, and electrically connecting the welding pad of the photosensitive chip and the welding pad of the functional element; and removing the first bearing substrate.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following advantages:
the embodiment of the invention adopts a selective spraying treatment mode to form the plastic packaging layer, so that the plastic packaging layer is conveniently and directly formed in the area needing to be formed, the packaging efficiency is improved, the process complexity of forming the plastic packaging layer is reduced, and the problem that the photosensitive chip and the functional element in the existing plastic packaging layer are subjected to injection molding pressure is favorably avoided, so that the photosensitive chip and the functional element are prevented from deforming or breaking; moreover, the plastic package layer formed by adopting a selective spraying treatment mode has small internal stress, the interface performance between the plastic package layer and the photosensitive chip, the optical filter and the functional element is improved, the adhesiveness between the plastic package layer and the photosensitive chip, the optical filter and the functional element is stronger, and the plastic package layer is ensured to have good sealing effect on the photosensitive chip, the optical filter and the functional element; to sum up, the performance of the camera shooting assembly is improved while the packaging efficiency is improved.
Drawings
Fig. 1 to 13 are schematic structural diagrams corresponding to steps in an embodiment of a method for packaging a camera module according to the present invention;
fig. 14 to 17 are schematic structural diagrams corresponding to steps in another embodiment of the method for packaging a camera module according to the present invention.
Detailed Description
At present, the service performance of the lens module needs to be improved, and the lens module is difficult to meet the requirements of miniaturization and thinning of the lens module. The reason for this analysis is:
the traditional lens module is mainly assembled by a circuit board, a photosensitive chip, a functional element (such as a peripheral chip) and a lens component, wherein the peripheral chip is usually attached to a peripheral mainboard, and the photosensitive chip and the functional element are mutually separated; the circuit board is used for supporting the photosensitive chip, the functional element and the lens module, and the circuit board is used for electrically connecting the photosensitive chip, the functional element and the lens module.
However, with the requirement of high-pixel and ultra-thin lens module, the imaging requirement of the lens module is higher and higher, the area of the photosensitive chip is correspondingly increased, and the number of functional elements is correspondingly increased, so that the size of the lens module is larger and larger, and the requirements of miniaturization and thinning of the lens module are difficult to meet.
Moreover, the photosensitive chip is usually disposed inside a support in the lens module, and the peripheral chip is usually disposed outside the support, so that a certain distance is formed between the peripheral chip and the photosensitive chip, thereby reducing the rate of signal transmission. The peripheral chip usually includes a Digital Signal Processor (DSP) chip and a memory chip, so that it is easy to have adverse effects on the shooting speed and the storage speed, and further reduce the usability of the lens module.
In order to solve the above problems, a package method for omitting a circuit board is provided, in which a photosensitive chip and a functional element are integrated in a molding layer, and an electrical connection is implemented between the photosensitive chip and the functional element, so that the total thickness of the lens module is reduced, and the distance between the photosensitive chip and the functional element is reduced.
However, the process of forming the molding layer is generally an injection molding process (molding), in which after the photosensitive chip and the functional element are placed in a mold, a liquid molding compound is injected into a cavity of the mold, the photosensitive chip and the functional element are encapsulated by the molding compound, and the molding compound is cooled and then solidified to form the molding layer. In the injection molding process, the photosensitive chip and the functional element can be subjected to larger injection molding pressure, and the photosensitive chip and the functional element are easy to deform or even break under the injection molding pressure, so that the performance of the packaging structure is invalid, and the packaging fails.
Moreover, the plastic package layer formed by the injection molding process usually wraps the photosensitive chip and the functional element in a full-covering manner, i.e., the plastic package layer covers the top and the side wall of the photosensitive chip and the functional element, so that the inside of the plastic package layer has a relatively large internal stress (stress), and the internal stress also easily causes the photosensitive chip and the functional element to deform or even break, thereby causing package failure.
In order to solve the technical problem, the embodiment of the invention adopts a selective spraying treatment mode to form the plastic packaging layer, so that the plastic packaging layer is conveniently and directly formed in an area needing to be formed with the plastic packaging layer, the packaging efficiency is improved, the process complexity of forming the plastic packaging layer is reduced, and the problem that a photosensitive chip and a functional element in the existing plastic packaging layer are subjected to injection molding pressure is favorably avoided, so that the photosensitive chip and the functional element are prevented from deforming or breaking; moreover, the plastic package layer formed by adopting a selective spraying treatment mode has small internal stress, the interface performance between the plastic package layer and the photosensitive chip, the optical filter and the functional element is improved, the adhesiveness between the plastic package layer and the photosensitive chip, the optical filter and the functional element is stronger, and the plastic package layer is ensured to have good sealing effect on the photosensitive chip, the optical filter and the functional element; to sum up, the performance of the camera shooting assembly is improved while the packaging efficiency is improved.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 1 to 13 are schematic structural diagrams corresponding to steps in an embodiment of a method for packaging a camera module according to the present invention.
Referring to fig. 1 to 2 in combination, fig. 2 is an enlarged view of one of the photosensitive chips in fig. 1, and provides a photosensitive chip 200, where the photosensitive chip 200 has a pad.
The photo sensor chip 200 is an image sensor chip. In the present embodiment, the photo sensor chip 200 is a CMOS Image Sensor (CIS) chip. In other embodiments, the photosensitive chip may also be a CCD (charge coupled device) image sensor chip.
In the present embodiment, the photosensitive chip 200 has a light signal receiving surface 201 (as shown in fig. 2), and the photosensitive chip 200 receives the sensing optical radiation signal through the light signal receiving surface 201; the photosensitive chip 200 includes a photosensitive region 200C and a peripheral region 200E surrounding the photosensitive region 200C, and the optical signal receiving surface 201 is located in the photosensitive region 200C.
The photo sensor chip 200 includes a plurality of pixel units, and thus the photo sensor chip 200 includes a plurality of semiconductor photo sensors (not shown), and a plurality of filter films (not shown) disposed on the semiconductor photo sensors, the filter films being used for selectively absorbing and passing light signals received by the optical signal interface 201; the photosensitive chip 200 further includes micro lenses 210 on the filter film, and the micro lenses 210 correspond to the semiconductor photosensors one-to-one, so as to focus the received light radiation signal rays onto the semiconductor photosensors. The optical signal receiving surface 201 is a top surface of the microlens 210.
It should be noted that the photosensitive chip 200 is generally a silicon-based chip manufactured by using an integrated circuit manufacturing technology, and the photosensitive chip 200 has a bonding pad for electrically connecting the photosensitive chip 200 with other chips or components. In this embodiment, the photo sensor chip 200 has a first chip pad 220 formed in the peripheral region 200E.
In this embodiment, the first chip pad 220 is exposed on the surface of the photo sensor chip 200 on the same side as the light signal receiving surface 201.
With continuing reference to figures 1 and 2 in conjunction with figure 3, figure 3 is an enlarged view of one of the filters of figure 1 with a filter 400 (shown in figure 1) attached to the photo-sensing chip 200.
After the filter 400 and the photosensitive chip 200 are mounted, the photosensitive unit 250 (shown in fig. 1) is formed. The optical filter 400 is attached to the photosensitive chip 200, so as to prevent the subsequent packaging process from polluting the optical signal receiving surface 201, and is beneficial to reducing the overall thickness of the subsequent lens module, so as to meet the requirements of miniaturization and thinning of the lens module.
The filter 400 is an infrared filter glass or a full-transmission glass. In this embodiment, the optical filter 400 is an infrared filter glass, and is further configured to eliminate the influence of infrared light in incident light on the performance of the photosensitive chip 200, which is beneficial to improving the imaging effect.
In this embodiment, the optical filter 400 includes a surface to be bonded 401. The surface to be bonded 401 is a surface for mounting with the photosensitive chip 200, that is, a surface for facing the photosensitive chip 200.
As shown in fig. 3, the filter 400 includes a light-transmitting region 400C and an edge region 400E surrounding the light-transmitting region 400C. The light-transmitting area 400C is used for transmitting external incident light, so that the light signal receiving surface 201 of the photosensitive chip 200 receives a light signal, thereby ensuring the normal use function of the lens module; the edge region 400E is a reserved space for mounting the optical filter 400 and the light sensing chip 200.
As shown in fig. 1, in the present embodiment, the optical filter 400 is attached to the photosensitive chip 200 through an adhesive structure 410, and the adhesive structure 410 surrounds the optical signal receiving surface 201.
The bonding structure 410 is used for realizing physical connection between the optical filter 400 and the photosensitive chip 200, and a cavity (not labeled) is defined by the optical filter 400, the bonding structure 410 and the photosensitive chip 200, so that direct contact between the optical filter 400 and the photosensitive chip 200 is avoided, and adverse effects of the optical filter 400 on the performance of the photosensitive chip 200 are avoided.
In this embodiment, the bonding structure 410 surrounds the light signal receiving surface 201, so that the optical filter 400 above the light signal receiving surface 201 is located on the photosensitive path of the photosensitive chip 200, and the performance of the photosensitive chip 200 is further ensured.
In this embodiment, the material of the adhesive structure 410 is a dry film (dry film) that can be photo-etched. In other embodiments, the material of the adhesive structure may also be a photo-lithographically-processable polyimide (polyimide), a photo-lithographically-processable Polybenzoxazole (PBO), or a photo-lithographically-processable benzocyclobutene (BCB).
In this embodiment, in order to reduce the difficulty of the process for forming the adhesive structure 410, simplify the process steps, and reduce the influence of the process for forming the adhesive structure 410 on the optical signal receiving surface 201, the adhesive structure 410 is formed on the optical filter 400. Specifically, as shown in fig. 1, the mounting step includes: providing a third carrier substrate 340; bonding the filter 400 on the third carrier substrate 340 while facing away from the surface 401 to be bonded; after the temporary bonding step, a ring-shaped bonding structure 410 is formed at an edge region 400E (shown in fig. 3) of the optical filter 400; the light signal receiving surface 201 of the photosensitive chip 200 is made to face the annular adhesive structure 410, and the peripheral region 200E (shown in fig. 2) of the photosensitive chip 200 is attached to the annular adhesive structure 410 to form the photosensitive unit 250.
In this embodiment, the third carrier substrate 340 is a carrier wafer (carrier wafer). In other embodiments, the third carrier substrate may also be other types of substrates.
Specifically, the optical filter 400 is temporarily bonded on the third carrier substrate 340 through the first temporary bonding layer 345. The first temporary bonding layer 345 serves as a release layer for facilitating subsequent debonding.
In this embodiment, the first temporary bonding layer 345 is a foamed film. In other embodiments, the first temporary bonding layer may also be a Die Attach Film (DAF).
With reference to fig. 4, it should be noted that after the mounting step, the method further includes: attaching the surface of the photosensitive chip 200 opposite to the light signal receiving surface 201 to the UV film 310; after the attaching step, a first debonding process is performed to remove the third carrier substrate 340 (shown in fig. 1).
Through the attaching step, a process preparation is made for subsequently temporarily bonding the photosensitive unit 250 to another carrier substrate, and the UV film 310 serves to provide a supporting and fixing function to the photosensitive unit 250 after the third carrier substrate 340 is removed. In which the adhesion of the UV film 310 is weakened by the irradiation of the ultraviolet light, and the photosensitive unit 250 is easily removed from the UV film 310 later.
In this embodiment, the first temporary bonding layer 345 (shown in fig. 1) is a foamed film, and thus a thermal decomposition bonding process is used to perform the first de-bonding process.
Referring to fig. 5, a first carrier substrate 320 is provided, a functional element (not labeled) and a photosensitive unit 250 are temporarily bonded on the first carrier substrate 320, the photosensitive unit 250 includes a photosensitive chip 200 bonded on the first carrier substrate 320 and a filter 400 attached on the photosensitive chip 200, the photosensitive chip 200 and the functional element have bonding pads, the bonding pads of the photosensitive chip 200 and the functional element are both back to the first carrier substrate 320, and an exposed region of the filter 400 is a plastic package region I.
By temporarily bonding the functional element and the photosensitive chip 200 to the first carrier substrate 320, the process is ready for the subsequent package integration and electrical integration of the functional element and the photosensitive chip 200. And the photosensitive chip 200, the functional element and the first carrier substrate 320 are separated in a subsequent process by means of Temporary Bonding (TB). The first carrier substrate 320 is further used for providing a process platform for forming a subsequent molding compound layer.
In this embodiment, the first carrier substrate 320 is a carrier wafer. In other embodiments, the first carrier substrate may also be other types of substrates. Specifically, the functional element and the photosensitive chip 200 are temporarily bonded to the first carrier substrate 320 through the second temporary bonding layer 325. In this embodiment, the second temporary bonding layer 325 is a foamed film.
The plastic packaging area I is an area where a plastic packaging layer is to be formed. In this embodiment, an area surrounded by the photosensitive chip 200, the functional element, and the first carrier substrate 320 in the plastic package area I is a bottom plastic package area I, and an area higher than the top of the functional element in the plastic package area I is a top plastic package area I.
In this embodiment, after the temporary bonding step, the arrangement direction of the photosensitive chips 200 and the functional elements on the first carrier substrate 320 is the X direction, and the direction parallel to the surface of the first carrier substrate 320 and perpendicular to the X direction is the Y direction.
In this embodiment, after the photo sensor chip 200 is temporarily bonded on the first carrier substrate 320, the first chip pad 220 of the photo sensor chip 200 faces away from the first carrier substrate 320.
Specifically, ultraviolet light is irradiated on the UV film 310 (shown in fig. 4) at the position of the single photosensitive unit 250 (shown in fig. 1) to make the UV film 310 lose adhesiveness, and the single photosensitive unit 250 is lifted up by the ejector pin, and then the photosensitive unit 250 is lifted up by the adsorption apparatus, and the photosensitive unit 250 is sequentially peeled off from the UV film 310 and placed on the first carrier substrate 320, which is beneficial to improving the position accuracy of the photosensitive unit 250 on the first carrier substrate 320, so as to facilitate the normal operation of the subsequent processes.
In this embodiment, after the photosensitive chip 200 and the filter 400 are mounted, the photosensitive chip 200 is temporarily bonded to the first carrier substrate 320. In other embodiments, the mounting of the photosensitive chip and the optical filter may also be implemented after the photosensitive chip is temporarily bonded on the first carrier substrate.
The present embodiment illustrates only one photosensitive unit 250. In other embodiments, when the formed lens module is applied to a dual-lens or array module product, the number of the photosensitive units can be multiple.
The functional element is a specific functional element in the image pickup assembly except for the photosensitive chip 200, and the functional element includes at least one of the peripheral chip 230 and the passive element 240. In this embodiment, the functional elements include a peripheral chip 230 and a passive element 240.
The peripheral chip 230 is an active component, and is used to provide peripheral circuits to the photosensitive chip 200 after the electrical connection with the photosensitive chip 200 is subsequently achieved.
In this embodiment, the peripheral chip 230 includes one or both of a digital signal processor chip and a memory chip. In other embodiments, the peripheral chips may also include chips of other functional types. Only one peripheral chip 230 is illustrated in fig. 5, but the number of peripheral chips 230 is not limited to one.
The peripheral chip 230 is typically a silicon-based chip fabricated by using integrated circuit fabrication technology, and also has bonding pads for electrically connecting the peripheral chip 230 to other chips or components. In this embodiment, the peripheral chip 230 includes a second chip pad 235.
In this embodiment, the first chip pad 220 faces away from the first carrier substrate 320, so that in order to reduce the difficulty of the subsequent electrical connection process, after the peripheral chip 230 is temporarily bonded to the first carrier substrate 320, the second chip pad 235 also faces away from the first carrier substrate 320, so that the first chip pad 220 and the second chip pad 235 are located at the same side.
It should be noted that, for convenience of illustration, only one passive element 240 is illustrated in fig. 5, but the number of passive elements 240 is not limited to one.
The passive component 240 also has a pad for electrically connecting the passive component 240 to other chips or components. In this embodiment, the pad of the passive device 240 is an electrode 245. In the case that the first chip pad 220 faces away from the first carrier substrate 320, the electrode 245 also faces away from the first carrier substrate 320 after the passive component 240 is temporarily bonded onto the first carrier substrate 320.
Accordingly, the thickness difference between the peripheral chip 230 and the photosensitive chip 200 is-2 to 2 micrometers, and the thickness difference between the passive element 240 and the photosensitive chip 200 is-2 to 2 micrometers.
Referring to fig. 6, a selective spraying process is performed to spray a plastic package material to the plastic package region I (as shown in fig. 5), and the plastic package material is cured to form a plastic package layer 350 located in the plastic package region I, where the plastic package layer 350 covers the first carrier substrate 320, the photosensitive chip 200, and the functional element (not shown), and also covers the sidewall of the optical filter 400.
The molding layer 350 fixes the photosensitive chip 200 and the functional elements (e.g., the peripheral chip 230 and the passive element 240) for realizing package integration of the photosensitive chip 200 and the functional elements; the plastic sealing layer 350 can also play a role in insulation, sealing and moisture protection, and is also beneficial to improving the reliability of the lens module.
The plastic package layer 350 can reduce the space occupied by the bracket in the lens assembly, and can also save a circuit board (such as a PCB), thereby significantly reducing the total thickness of a subsequently formed lens module, and meeting the requirements of miniaturization and thinning of the lens module. Moreover, compared with the scheme of mounting the functional elements on the peripheral motherboard, the distance between the photosensitive chip 200 and each functional element can be reduced by integrating the photosensitive chip and the functional elements in the plastic package layer 350, which is beneficial to shortening the electrical connection distance between the photosensitive chip and each functional element, so that the signal transmission rate is increased, and the service performance of the lens module is further improved (for example, the shooting speed and the storage speed are increased).
The plastic package layer 350 of the embodiment is formed by a selective spraying method, so that the problem that injection molding pressure is applied to the photosensitive chip 200, the functional element and the optical filter 400 in the process of forming the plastic package layer in the prior art is solved, adverse effects of the injection molding pressure on the photosensitive chip 200, the functional element and the optical filter 400 are avoided, the photosensitive chip 200, the functional element and the optical filter 400 are prevented from being deformed or broken, and the functional integrity of the photosensitive chip 200, the functional element and the optical filter 400 is ensured; moreover, the plastic package layer 350 formed by adopting the selective spraying treatment has small internal stress, so that the interface performance between the plastic package layer 350 and the photosensitive chip 200, the optical filter 400 and the functional element is improved, the adhesion between the plastic package layer 350 and the photosensitive chip 200, the optical filter 400 and the functional element is stronger, and the plastic package layer 350 is ensured to have a good sealing effect on the photosensitive chip 200, the optical filter 400 and the functional element; in summary, the encapsulation method provided by the invention improves the performance of the lens module while improving the encapsulation efficiency.
Specifically, the plastic package layer 350 is formed by adopting a selective spraying treatment mode, the process flexibility is high, and plastic package materials cannot be sprayed to the area outside the plastic package area I, so that the process difficulty of forming the plastic package layer 350 is reduced. Moreover, according to actual requirements, the thickness of the formed plastic package layer 350 is controlled by reasonably controlling the amount of the plastic package material sprayed by the selective spraying treatment, so that the plastic package layer 350 is easy to cover the first bearing substrate 320, the photosensitive chip 200 and the functional elements and expose the optical filter 400, the process complexity of forming the plastic package layer 350 is reduced, and the packaging efficiency is improved.
In this embodiment, when the plastic package material is sprayed to the plastic package region I, the plastic package material fills the plastic package region I. Accordingly, the plastic sealing layer 350 covers the sidewall of the optical filter 400, thereby improving the sealing performance of the cavity in the light sensing unit, reducing the probability of water vapor, oxidizing gas, and the like entering the cavity, and ensuring the performance of the light sensing chip 200.
In this embodiment, an area surrounded by the photo chip 200, the functional element, and the first carrier substrate 320 in the plastic package area I is a bottom plastic package area I, and an area higher than the top of the functional element in the plastic package area I is a top plastic package area ii. Since the top surfaces of the photo-sensing chip 200 and the functional elements are higher than the top surface of the first carrier substrate 320, in this embodiment, in order to improve the flatness of the top surface of the finally formed plastic package layer 350, after the plastic package material is filled in the bottom plastic package region i, plastic package is sprayed to the top plastic package region ii.
The plastic package material is a plastic package glue with fluidity. In this embodiment, the Molding Compound is an Epoxy Molding Compound (EMC) and includes a matrix resin, a curing agent, a coupling agent, and a filler, where the matrix resin is an Epoxy resin, the curing agent is a phenolic resin, and the coupling agent may be a silica powder or a silica powder. Epoxy resin has the advantages of low shrinkage, good adhesion, good corrosion resistance, excellent electrical properties, low cost and the like, and is widely used as a packaging material for electronic devices and integrated circuits. In other embodiments, other suitable molding compounds may be used.
In this embodiment, the method of selective spray coating includes: providing a movable spray head; the spray head is adopted to move above the first bearing substrate 320, and when the spray head moves above the plastic packaging area I, the spray head sprays plastic packaging materials to the plastic packaging area I. Specifically, a spraying device is provided, and the spraying device is provided with a movable spray head; the first carrier substrate 320 is placed on a carrier table (chuck), and the selective spray process is completed using a spray device.
Specifically, when the plastic package material is sprayed to the bottom plastic package area i, when the first carrier substrate 320 exposed by the photosensitive chip 200 and the functional element moves to a position below the nozzle, the nozzle sprays the plastic package material to the bottom plastic package area i, and when the photosensitive chip 200 and the functional element move to a position below the nozzle, the nozzle stops spraying the plastic package material; and after the plastic packaging material is filled in the bottom plastic packaging area i, when the top plastic packaging area ii moves to the position below the spray head, the spray head sprays the plastic packaging material to the area.
In order to improve the thickness uniformity of the plastic package layer 350, the nozzle moves at least twice above the same plastic package region during the selective spraying process to form the plastic package layer 350. For the same plastic package region, the plastic package layer 350 is formed by spraying the plastic package material at least twice, and before spraying the plastic package material for the next time, the plastic package material sprayed for the previous time flows on the plastic package region I for a certain time and space, so that when spraying the plastic package material for the next time, the thickness uniformity of the plastic package material sprayed for the previous time is improved, and the thickness uniformity of the finally formed plastic package layer 350 is improved.
In this embodiment, in the selective spraying process, a moving path of the nozzle when the nozzle moves past the upper portion of the plastic sealing region I for the previous time is a first direction, a path of the nozzle when the nozzle moves past the upper portion of the plastic sealing region I for the subsequent time is a second direction, and the second direction is different from the first direction. The benefit of this arrangement is: since the thickness distribution of the plastic package materials sprayed to the same plastic package region by the nozzles from different moving paths has differences, the thickness distributions with differences compensate each other when the nozzles with different moving paths are used for spraying the plastic package materials to the same plastic package region, thereby further improving the thickness uniformity of the finally formed plastic package layer 350.
In this embodiment, the arrangement direction of the photosensitive chips 200 and the functional elements on the first carrier substrate 320 is the X direction, and the direction parallel to the surface of the first carrier substrate 320 and perpendicular to the X direction is the Y direction; the moving path of the showerhead moving above the first carrier substrate 320 has a direction including: one or more of + X direction, -X direction, + Y direction, and-Y direction.
The selective spray coating treatment comprises the following steps: at least one X-direction spraying step, wherein the X-direction spraying step comprises the following steps: the spray head moves along the + X direction or the-X direction and passes through the plastic package area I along the X direction until the spray head moves through the plastic package areas I in all the X directions; at least one Y-direction spraying step, wherein the Y-direction spraying step comprises the following steps: and the spray head moves along the + Y direction or the-Y direction and passes through the plastic package area I along the Y direction until the spray head moves through the plastic package areas I along all the Y directions.
It should be noted that, in order to improve the thickness uniformity of the plastic package layer 350 and improve the performance of the plastic package layer 350, the X-direction spraying step and the Y-direction spraying step may be performed alternately until the plastic package layer 350 with a thickness meeting the requirement is formed. When the spraying step in the X direction is changed to the spraying step in the Y direction, the spraying may be performed by moving the nozzle, or by rotating the first carrier substrate 320 by 90 ° using the carrier stage.
In other embodiments, the step of selectively spraying may further include: at least two X-direction spraying steps, wherein each X-direction spraying step comprises the following steps: the spray head moves along the + X direction and passes through the upper parts of all the plastic packaging areas in the + X direction; then, the spray head moves along the-X direction and passes through the upper parts of all the plastic packaging areas in the-X direction; and the spray head alternately moves along the + X direction and the-X direction until the thickness of the plastic packaging layer meets the process requirement.
It should be further noted that, in the scheme of performing the selective spraying treatment by using the X-direction spraying step of spraying at least twice, for the region outside the plastic package region I where the photosensitive chip 200 and the functional element are not disposed, the nozzle may spray the plastic package material to the region; if the area is cut and removed in the subsequent cutting treatment process, the plastic package material is not sprayed on the area.
Correspondingly, in other embodiments, the selective spraying treatment may further include at least two Y-direction spraying steps, and the spray head may alternately move in the + Y direction and the-Y direction until the thickness of the molding layer meets the process requirement. In other embodiments, the direction of the moving path of the spray head may further include: an oblique direction at 45 degrees to the X direction or an oblique direction at 45 degrees to the Y direction.
Before the selective spraying treatment, acquiring the position information of the plastic package area I on the first bearing substrate 320; and performing selective spraying processing based on the acquired position information.
In this embodiment, the step of obtaining the position information of the plastic package area I includes: after the photosensitive unit 250 and the functional element are placed on the first carrier substrate 320 based on the preset position information, the preset position information is used as the position information of the plastic package region I. In other embodiments, to improve the accuracy of the position information and avoid the influence caused by process deviation, the method for obtaining the position information of the plastic package region may further include: after the photosensitive unit and the functional element are arranged on the first bearing substrate, the surface of the first bearing substrate is irradiated by light, and light information reflected by the surface of the first bearing substrate is collected to obtain the position information of the plastic package area. Since the photosensitive chip, the functional element, the optical filter, and the first carrier substrate are made of different materials, different optical information is collected to obtain the position information of the plastic package region, for example, the camera may receive the reflected optical information, and the position information of the plastic package region may be obtained according to an image generated by the camera based on the optical information.
Specifically, the method of performing selective spray processing based on the acquired position information includes: while the showerhead moves above the first carrier substrate 320, a real-time position of the showerhead on the first carrier substrate 320 is obtained in real time; based on the real-time position and the obtained position information, the nozzle is controlled to spray the plastic package material to the plastic package area I in the process of moving on the first carrier substrate 320. The real-time position may be directly obtained, or may be obtained by conversion based on the initial position of the spray head, the movement rate of the spray head, and the movement time of the spray head.
The plastic package area I is provided with a first boundary and a second boundary which are opposite, the direction of the first boundary pointing to the second boundary is consistent with the moving direction of the spray head, and when the spray head moves through the first boundary and is away from the first boundary by a first distance, the spray head starts to spray plastic package materials; and when the spray head moves to a second distance away from the second boundary and does not exceed the second boundary, the spray head finishes spraying the plastic package material.
The first distance should not be too large. If the first distance is too large, the effective spraying area of the spray head passing through the upper part of the same plastic packaging area once is too small, so that the efficiency of selective spraying treatment is reduced. For this reason, in the present embodiment, the first distance ranges from 0 to 30mm, for example, 5mm, 10mm, 15mm, 25mm.
The second distance should not be too small or too large. If the second distance is too small, the plastic packaging material is easily sprayed to an area where spraying is not expected by the spray head; if the second distance is too large, the effective spraying area of the spray head passing through the upper part of the same plastic packaging area once is too small, so that the efficiency of selective spraying treatment is reduced. For this reason, in the present embodiment, the second distance ranges from 5nm to 30mm, for example, 10mm, 18mm, 23mm, 28mm.
During the selective spraying process, the vertical distance between the nozzle and the first carrier substrate 320 should not be too small or too large. The closer the vertical distance is, the smaller the area of the area sprayed by the spray head in unit time is, the thicker the thickness of the film layer formed by spraying the plastic package material on the plastic package area I in unit time is, and the smaller the thickness uniformity of the formed film layer is, which is not beneficial to improving the thickness uniformity of the plastic package layer 350; the farther the vertical distance is, the more difficult the position accuracy of the spray head for spraying the plastic package material is to control, and the plastic package material is easily lost.
For this reason, in the present embodiment, the vertical distance between the showerhead and the first carrier substrate 320 is 5mm to 30mm, for example, 10mm, 15mm, 20mm, 28mm.
In addition, in the selective spraying process, for the same plastic package area I, as the amount of the plastic package material in the plastic package area I gradually increases, the vertical distance between the nozzle and the first carrier substrate 320 gradually decreases, that is, the vertical distance between the nozzle and the first carrier substrate 320 when the nozzle passes through a certain plastic package area I next time is a first vertical distance, the vertical distance between the nozzle and the first carrier substrate 320 when the nozzle passes through the same plastic package area I last time is a second vertical distance, and the first vertical distance is smaller than the second vertical distance.
In the selective spraying process, the moving speed of the spray head is not too small or too fast. If the moving speed is too low, under the condition that the flow rate of the plastic package material sprayed by the spray head is certain, the amount of the plastic package material sprayed by the spray head in the process of moving the spray head through the plastic package area I at a single time is larger, the thickness of a film layer formed at the plastic package area I at a single time is thicker, the thickness uniformity of the film layer is relatively poorer, and the improvement of the thickness uniformity of the finally formed plastic package layer 350 is not facilitated; if the speed of head movement is too high, the spraying efficiency of the selective spraying treatment is low, and the packaging efficiency is affected. For this reason, in the present embodiment, the velocity of movement of the head during the selective spray treatment is 0.01m/s to 0.1m/s, for example, 0.03m/s, 0.05m/s, 0.07m/s, 0.9m/s.
In the selective spraying process, the flow rate of the plastic packaging material sprayed by the spray head is not too small or too large. If the flow is too small, the spraying efficiency of the selective spraying treatment is correspondingly low, and the packaging efficiency is influenced; if the flow is too large, the amount of the plastic packaging material sprayed in the process that the spray head moves through the plastic packaging area I at a single time is large, the thickness of the film layer formed at the plastic packaging area I at a single time is thick, the thickness uniformity of the film layer is relatively poor, and the improvement of the thickness uniformity of the plastic packaging layer 350 is not facilitated. For this reason, in this embodiment, the flow rate of the plastic molding compound sprayed by the nozzle during the selective spraying process is 1ml/s to 10ml/s, such as 2ml/s, 4ml/s, 6ml/s, and 9ml/s.
It should be noted that, in the present embodiment, a movable spray head is provided to implement the selective spray coating process as an example. In other embodiments, the selective spray coating process may further include: providing a nozzle and a movable carrying platform; and arranging the first bearing substrate on the movable carrying platform, so that the first bearing substrate moves below the spray head, and when the plastic packaging area I moves below the spray head, spraying a plastic packaging material to the plastic packaging area I by the spray head.
And after the selective spraying treatment is finished, curing the plastic packaging material positioned in the plastic packaging area I. The curing process is used to cure and mold the molding compound located in the molding region I, and during the curing process, a cross-linking reaction occurs inside the molding compound to form the molding layer 350 with bending resistance, moisture resistance and heat resistance.
Specifically, the curing process employs steps comprising: under vacuum, N 2 Or baking the plastic package material in the plastic package area I in an inert gas environment.
In this embodiment, the process temperature used for the curing process should not be too low or too high. If the process temperature is too low, the cross-linking reaction in the plastic packaging material is incomplete in the curing process, so that the plastic packaging effect of the plastic packaging layer 350 is affected; if the process temperature is too high, the performance of the photosensitive chip 200 and the functional element is easily affected, and the process temperature is too high, the internal stress of the plastic package layer 350 is relatively large, so that the adhesion between the plastic package layer 350 and the photosensitive chip 200 and the functional element is easily reduced, and the plastic package effect of the plastic package layer 350 is easily affected.
Therefore, in this embodiment, the process temperature for the curing treatment is 120 ℃ to 160 ℃, for example, 130 ℃, 140 ℃, 150 ℃. Curing within the process temperature range, so that the internal crosslinking reaction of the plastic packaging material in the plastic packaging area I is gradually completed, and the number of reaction groups and reaction active points in the molecules is gradually reduced, thereby forming a plastic packaging layer 350 with a stable three-dimensional net structure, so that the plastic packaging layer 350 has high strength and high hardness, and the plastic packaging layer 350 is ensured to have high bending resistance, moisture resistance and heat resistance; and the internal stress of the molding layer 350 is moderate, so the adhesion between the molding layer 350 and the photosensitive chip 200 and the functional element is strong, and the adhesion between the molding layer 350 and the first carrier substrate 320 is strong.
In this embodiment, before the curing process, the method further includes: and in the process of carrying out selective spraying treatment, heating the plastic packaging material positioned in the plastic packaging area I, wherein the process temperature of the heating treatment is lower than that of the curing treatment.
In the process of heating treatment, the flowability of the plastic packaging material in the plastic packaging area I is improved, which is beneficial to improving the thickness uniformity of the formed plastic packaging layer 350; moreover, solvent molecules which hinder the crosslinking reaction exist in the plastic packaging material, and the heating treatment is beneficial to volatilizing the solvent from the plastic packaging material, so that the crosslinking reaction degree in the subsequent curing treatment process is improved, and the strength and the hardness of the formed plastic packaging layer 350 are improved.
The process temperature of the heating treatment is not suitable to be too low or too high. If the process temperature is too low, the flowability of the plastic packaging material is relatively poor, and the volatilization degree of a solvent which can influence the crosslinking reaction in the plastic packaging material is low; if the process temperature is too high, the plastic package material in the plastic package region I is easily hardened too early, and the plastic package layer 350 is easily delaminated.
Therefore, in the present embodiment, the process temperature of the heat treatment is 20 ℃ to 120 ℃, for example, 40 ℃, 60 ℃, 80 ℃, 100 ℃. The process temperature adopted by the heating treatment is moderate, so that the plastic package material in the plastic package area I is ensured to have proper fluidity, the solvent in the plastic package material is volatilized as much as possible, and meanwhile, the problem of delamination of the plastic package layer 350 caused by overhigh process temperature of the heating treatment can be avoided. The heat treatment method can be as follows: the heating treatment is completed by heating the bearing table.
In other embodiments, the curing process may be performed during the selective spraying process.
It should be noted that, because the circuit board is omitted, the effect of reducing the thickness of the lens module can be achieved. Therefore, the photosensitive chip 200 and the peripheral chip 230 do not need to be thinned, so that the mechanical strength and reliability of the photosensitive chip 200 and the peripheral chip 230 are improved, and the reliability of the lens module is correspondingly improved.
With continued reference to fig. 5, in this embodiment, before forming the molding layer 350 (as shown in fig. 6), further includes: a stress buffer layer 420 covering the sidewalls of the filter 400 is formed.
The stress buffer layer 420 is beneficial to reducing the stress of the plastic package layer 350 on the optical filter 400, so as to reduce the probability of the optical filter 400 breaking, thereby improving the reliability and yield of the packaging process and correspondingly improving the reliability of the lens module. .
The stress buffer layer 420 has adhesiveness to ensure its adhesiveness on the filter 400. In this embodiment, the stress buffer layer 420 is made of epoxy glue.
In this embodiment, after the photo sensing unit 250 (as shown in fig. 1) is temporarily bonded to the first carrier substrate 320, the stress buffer layer 420 is formed, so that the first carrier substrate 320 provides a process platform for forming the stress buffer layer 420. In other embodiments, the stress buffer layer may also be formed before the optical filter is attached to the photosensitive chip; or after the optical filter is attached on the photosensitive chip and before the photosensitive unit is temporarily bonded on the first bearing substrate, a stress buffer layer is formed.
Specifically, the stress buffer layer 420 is formed through a dispensing process. By selecting the dispensing process, the compatibility of the step of forming the stress buffer layer 420 with the current packaging process is improved, and the process is simple.
In this embodiment, the stress buffer layer 420 also covers the sidewall of the bonding structure 410, so as to reduce the stress generated by the subsequent molding compound layer 350 on the bonding structure 410, and further improve the reliability and yield of the packaging process.
Referring to fig. 7 to 11, a redistribution layer (RDL) structure 360 (as shown in fig. 11) is formed on a side of the molding layer 350 close to the optical filter 400 to electrically connect the bonding pads of the photo sensor chip 200 and the bonding pads of the functional device (not shown).
The rewiring structure 360 is used to achieve electrical integration of the formed camera assembly.
In this embodiment, the distance between the photosensitive chip 200 and the functional element is reduced by the plastic package layer 350 and the rewiring structure 360, and the electrical connection distance is correspondingly shortened, so that the signal transmission speed is increased, and the use performance of the lens module is improved. Moreover, the rewiring structure 360 is selected, so that the distance between the photosensitive chip 200 and the functional element can be reduced, the feasibility of an electric connection process is improved, compared with a routing process, the rewiring structure 360 can realize batch production, and the packaging efficiency is improved.
Specifically, the step of forming the re-wiring structure 360 includes:
referring to fig. 7, a conductive via 351 is formed in the molding layer 350, and the conductive via 351 exposes a bonding pad (not labeled). Specifically, the conductive vias 351 expose the first chip pad 220, the second chip pad 235 and the electrode 245, respectively, so as to be ready for a subsequent electrical connection process.
In this embodiment, after the plastic package layer 350 is formed, the plastic package layer 350 is etched by using a laser etching process, so as to form a conductive through hole 351 in the plastic package layer 350. The laser etching process has high precision, and the forming position and the size of the conductive through hole 351 can be determined accurately.
In this embodiment, the thickness difference between the functional element and the photosensitive chip 200 is-2 microns to 2 microns, and the depths of the conductive through holes 351 are the same or similar, so that the process difficulty of the laser etching process is correspondingly reduced.
Referring to fig. 8 and 9 in combination, a second carrier substrate 330 is provided, a re-wiring structure 360 (shown in fig. 9) is formed on the second carrier substrate 330, and the re-wiring structure 360 includes an interconnection line 361 (shown in fig. 9) and a conductive pillar 362 (shown in fig. 9) protruding from the interconnection line 361.
By forming the redistribution structure 360 on the second carrier substrate 330, the process of forming the redistribution structure 360 is prevented from contaminating the optical filter 400.
Specifically, the step of forming the re-wiring structure 360: forming a dielectric layer 332 on the second carrier substrate 330; patterning dielectric layer 332 to form an interconnect trench (not shown) in dielectric layer 332; filling the interconnect trench with conductive material 365 (as shown in fig. 8), the conductive material 365 also covering the top of the dielectric layer 332; forming a patterned masking layer 366 (shown in fig. 8) over the conductive material 365, wherein the patterned masking layer 366 masks the conductive material 365 from the conductive pillars 362; etching the conductive material 365 to the dielectric layer 332 by using the patterned mask layer 366 as a mask to form an interconnection line 361 located in the interconnection trench and a conductive pillar 362 protruding out of the interconnection line 361; masking layer 366 and dielectric layer 332 are removed.
The interconnect trench is used to define the shape, location and size of the interconnect line 361. In this embodiment, the dielectric layer 332 is made of a photosensitive material, and can be patterned by a photolithography process, thereby simplifying the process difficulty of forming the interconnection trench. In this embodiment, the dielectric layer 332 is made of photosensitive polyimide. In other embodiments, the material of the dielectric layer may also be photosensitive benzocyclobutene or photosensitive polybenzoxazole.
In this embodiment, the conductive material 365 is copper, i.e., the material of the redistribution structure 360 is copper. By selecting the copper material, the improvement of the electrical connection reliability of the rewiring structure 360 is facilitated, and the resistivity of copper is low, so that the improvement of the conductivity of the rewiring structure 360 is facilitated, and in addition, the filling property of copper is good, and accordingly the filling effect of the conductive material 365 in the interconnection groove can be improved. In other embodiments, the rewiring structure may be other suitable conductive materials.
The dielectric layer 332 made of the above material has high corrosion resistance, so that after the rewiring structure 360 is formed, the dielectric layer 332 is removed by a reactive ion etching process, so that the second carrier substrate 330 is exposed out of the interconnection line 361, thereby making process preparation for a subsequent electrical connection process.
In this embodiment, before forming the dielectric layer 332 on the second carrier substrate 330, the method further includes: forming a third temporary bonding layer 331 on the second carrier substrate 330; the dielectric layer 332 is correspondingly formed on the third temporary bonding layer 331. The third temporary bonding layer 331 serves as a release layer to facilitate subsequent separation of the rewiring structure 360 and the second carrier substrate 330.
It should be noted that, in other embodiments, before forming the third temporary bonding layer 331 on the second carrier substrate, the method further includes: and forming a passivation layer on the second bearing substrate. Through the passivation layer, the second bearing substrate is prevented from being polluted, and the second bearing substrate can be recycled. The passivation layer may be made of silicon oxide or silicon nitride.
Referring to fig. 10 and 11 in combination, the conductive pillars 362 are bonded within the corresponding conductive vias 351 (shown in fig. 10) and electrically connected to the corresponding pads.
The conductive via 351 exposes the first chip pad 220, the second chip pad 235 and the electrode 245, so that the conductive pillar 362 is bonded in the conductive via 351 and then electrically connected to the first chip pad 220, the second chip pad 235 and the electrode 245. Specifically, the rewiring structure 360 is oriented toward the optical filter 400, and the conductive pillars 362 are bonded in the corresponding conductive vias 351 by a metal bonding process.
In this embodiment, the metal bonding process is a thermocompression bonding process. In the process of the metal bonding process, the contact surfaces of the conductive column 362 and the corresponding first chip bonding pad 220, second chip bonding pad 235 and electrode 245 are plastically deformed under the action of pressure intensity, so that atoms of the contact surfaces are in mutual contact, and with the increase of bonding temperature, the diffusion of the atoms of the contact surfaces is accelerated, and the cross-boundary diffusion is realized; after a certain bonding time is reached, the crystal lattices of the contact surface are recombined, so that bonding is realized, and the bonding strength, the electric conduction and heat conduction performance, the electromigration resistance and the mechanical connection performance are higher.
If the bonding temperature is too high, the performance of the photosensitive chip 200 and the peripheral chip 230 is easily affected, especially for sensitive elements in the formed image pickup assembly, and the too high process temperature also generates thermal stress, which causes problems of reduced alignment precision, increased process cost, reduced production efficiency, and the like. For this reason, in this embodiment, the metal bonding process is a metal low-temperature bonding process, and the bonding temperature is less than or equal to 250 ℃. Wherein the lowest value of the bonding temperature is only required to be satisfied to realize bonding.
Under the setting of the bonding temperature, the bonding quality of the rewiring structure 360 and the bonding pad is improved by increasing the pressure and the bonding time. For this reason, in this embodiment, the pressure of the metal bonding process is greater than or equal to 200kPa, and the bonding time of the metal bonding process is greater than or equal to 30min. Wherein the pressure is generated by a pressing tool.
It should be noted that, in the actual process, the bonding temperature, pressure and bonding time can be reasonably adjusted and matched with each other, thereby ensuring the quality and efficiency of metal bonding. It should be noted that, in order to reduce the probability of oxidation or contamination of the contact surface, the metal bonding process may be performed in a vacuum environment.
To this end, the encapsulation method further comprises: after the conductive pillars 362 are bonded in the corresponding conductive vias 351 (shown in fig. 9), a second debonding process is performed to remove the second carrier substrate 330 (shown in fig. 10) and the third temporary bonding layer 331 (shown in fig. 10).
By removing the second carrier substrate 330 and the third temporary bonding layer 331, the interconnect line 361 is exposed, thereby making process preparations for a subsequent electrical connection process.
Referring to fig. 12, a third de-bonding process is performed to remove the first carrier substrate 320 (shown in fig. 11).
The first carrier substrate 320 is used to provide a process platform for forming the molding layer 350, so that the first carrier substrate 320 can be removed after the molding layer 350 is formed.
In this embodiment, after the redistribution structure 360 for electrically connecting the pads is formed, the first carrier substrate 320 is removed, so that the first carrier substrate 320 is used to provide a process platform for the electrical connection step, thereby improving process operability and process stability. In other embodiments, the first carrier substrate may also be removed after the formation of the molding layer and before the metal bonding process.
In this embodiment, a third debonding process is performed by using a pyrolytic bonding process, and the first carrier substrate 320 and the second temporary bonding layer 325 are sequentially removed (as shown in fig. 10).
Referring to fig. 13 in combination, after removing the first carrier substrate 320 (as shown in fig. 10), the method further includes: the molding layer 350 is subjected to dicing (dicing).
A single camera assembly 260 having a size that meets process requirements is formed by dicing, making process preparations for assembly of subsequent lens assemblies. In this embodiment, a laser cutting process is used for scribing.
In this embodiment, in order to reduce the probability of damage to the first carrier substrate 320, the third de-bonding process is performed first, and then the dicing process is performed. In other embodiments, the third de-bonding process may also be performed after the dicing process.
With continued reference to fig. 13, after forming the redistribution structure 360 for electrically connecting the pads, the method further includes: a flexible printed circuit board (FPC) 510 is bonded to the rewiring structure 360.
The FPC board 510 is used to realize electrical connection between the camera assembly 260 and a subsequent lens assembly, and electrical connection between the formed lens module and other components, without a circuit board. After the lens module is formed subsequently, the lens module can be electrically connected with other elements in the electronic equipment through the FPC board 510, so that the normal shooting function of the electronic equipment is realized.
In this embodiment, the FPC board 510 has a circuit structure, so that the FPC board 510 is bonded to the rewiring structure 360 by a metal bonding process, thereby achieving electrical connection. Wherein, in order to improve the process feasibility, the FPC board 510 is bonded on the re-wiring structure 360 after the third de-bonding process and the dicing process.
The FPC board 510 is formed with a connector (connector) 520. Specifically, the connector 520 may be a gold finger connector.
Fig. 14 to 17 are schematic structural diagrams of another embodiment of the method for packaging the camera module according to the present invention.
The same parts of this embodiment as those of the previous embodiments are not described herein again. The difference lies in that: the interconnect line 361a and the conductive pillar 362a in the interconnect structure 360a (shown in fig. 15) are formed in different steps.
Specifically, referring to fig. 14 and 15 in combination, a conductive layer 363a is formed on the second carrier substrate 330a (as shown in fig. 14); the conductive layer 363a is etched to form an interconnection line 361a (shown in fig. 15).
In this embodiment, the interconnect 361a is made of aluminum. Specifically, after a patterned mask layer (e.g., a patterned photoresist layer) is formed on the conductive layer, the conductive layer exposed by the mask layer is etched using a dry etching process to form the interconnection line 361a.
With continued reference to fig. 15, a sacrificial layer 370a is formed overlying the second carrier substrate 330a and the interconnect line 361a; patterning sacrificial layer 370a forms via 375a, via 375a being used to define the location of subsequent conductive pillars. In this embodiment, the sacrificial layer 370a is made of a photosensitive material, and can be patterned by a photolithography process, which simplifies the process difficulty of forming the through hole 375 a.
In this embodiment, the material of the sacrificial layer 370a is photosensitive polyimide. In other embodiments, the material of the dielectric layer may also be photosensitive benzocyclobutene or photosensitive polybenzoxazole.
Referring to fig. 16, conductive post 362a is formed within via 375a (shown in fig. 15).
In this embodiment, a conductive material is filled in the through hole 375a by using an electroplating process to form the conductive pillar 362a, and the conductive pillar 362a and the interconnection line 361a constitute the redistribution structure 360a. The material of the conductive pillar 362a may be the same as or different from that of the interconnection line 361a. In this embodiment, in order to improve the conductive performance of the conductive pillar 362a and the filling performance of the conductive material in the through hole 375a, the conductive pillar 362a is made of copper.
Referring to fig. 17, the sacrificial layer 370a is removed (as shown in fig. 16). Since the sacrificial layer 370a is highly resistant to corrosion, the sacrificial layer 370a is removed by a reactive ion etching process after the rewiring structure 360 is formed.
For a specific description of the packaging method in this embodiment, reference may be made to the corresponding description in the foregoing embodiments, and details are not repeated here.
For a specific description of the packaging method of this embodiment, reference may be made to the corresponding description in the foregoing embodiments, and details are not repeated here. Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected by one skilled in the art without departing from the spirit and scope of the invention, as defined in the appended claims.

Claims (20)

1. A method of packaging a camera module, comprising:
providing a first bearing substrate, wherein a functional element and a photosensitive unit are temporarily bonded on the first bearing substrate, the photosensitive unit comprises a photosensitive chip bonded on the first bearing substrate and an optical filter attached on the photosensitive chip, the photosensitive chip and the functional element are provided with welding pads, the welding pads of the photosensitive chip and the functional element are back to the first bearing substrate, and the exposed area of the optical filter is a plastic package area;
carrying out selective spraying treatment, spraying a plastic packaging material to the plastic packaging area, and carrying out curing treatment on the plastic packaging material to form a plastic packaging layer located in the plastic packaging area, wherein the plastic packaging layer covers the first bearing substrate, the photosensitive chip and the functional element and also covers the side wall of the optical filter;
forming a conductive through hole in the plastic packaging layer, wherein the conductive through hole exposes out of the welding pad;
forming a rewiring structure on one side, close to the optical filter, of the plastic packaging layer through the conductive through hole, and electrically connecting the welding pad of the photosensitive chip and the welding pad of the functional element;
and removing the first bearing substrate.
2. The packaging method according to claim 1, wherein a region enclosed by the photosensitive chip, the functional element and the carrier substrate in the plastic package region is a bottom plastic package region, and a region higher than the top of the functional element in the plastic package region is a top plastic package region;
and in the process of spraying the plastic package material to the plastic package area, after the plastic package material is filled in the bottom plastic package area, spraying the plastic package material to the top plastic package area.
3. The encapsulation method according to claim 1, wherein the selective spray coating process comprises: providing a movable spray head;
and the spray head is adopted to move above the first bearing substrate, and when the spray head moves to pass through the upper part of the plastic packaging area, the spray head sprays plastic packaging materials to the plastic packaging area.
4. The packaging method according to claim 3, wherein the nozzle moves at least twice over the same molding region to form the molding layer; and the moving path of the sprayer when the sprayer moves above the plastic packaging area for the previous time has a first direction, the moving path of the sprayer when the sprayer moves above the same plastic packaging area for the next time has a second direction, and the second direction is different from the first direction.
5. The packaging method according to claim 3 or 4, wherein after the temporary bonding step, the arrangement direction of the photosensitive chips and the functional elements on the first carrier substrate is an X direction, and a direction parallel to the surface of the first carrier substrate and perpendicular to the X direction is a Y direction; the moving path of the spray head has a direction comprising: one or more of + X direction, -X direction, + Y direction, and-Y direction.
6. The encapsulation method of claim 5, wherein the path of travel of the showerhead has a direction further comprising: an oblique direction at 45 degrees to the X direction or an oblique direction at 45 degrees to the Y direction.
7. The packaging method according to claim 3, wherein before the selective spray coating process, position information of the plastic package region is acquired; and performing the selective spraying treatment based on the acquired position information.
8. The packaging method according to claim 7, wherein the method of acquiring the position information of the plastic package region includes: placing the functional element and the photosensitive unit on the first bearing substrate based on preset position information, and taking the preset position information as position information of a plastic packaging area on the first bearing substrate; or after the functional element and the photosensitive unit are arranged on the first bearing substrate, the surface of the first bearing substrate is irradiated with light, light information reflected by the surface of the first bearing substrate is collected, and the position information of the plastic package area is obtained.
9. The encapsulation method according to claim 7, wherein the method of performing the selective spray coating process based on the acquired position information includes: the real-time position of the spray head on the first bearing substrate is obtained in real time while the spray head moves above the first bearing substrate; and controlling the spray head to spray the plastic package material to the plastic package area in the process of moving on the first bearing substrate based on the real-time position and the acquired position information.
10. The encapsulation method according to claim 3, wherein in the selective spray coating process, the vertical distance between the spray head and the first carrier substrate is 5mm to 30mm, the speed of the spray head moving is 0.01m/s to 0.1m/s, and the flow rate of the spray head spraying the molding compound is 1ml/s to 10ml/s.
11. The encapsulation method of claim 1, wherein the step of selectively spraying comprises: providing a spray head and a movable carrying platform; and placing the first bearing substrate on the movable carrier platform, enabling the first bearing substrate to move below the spray head, and spraying plastic package materials to the plastic package area by the spray head when the plastic package area moves below the spray head.
12. The encapsulation method according to claim 1, wherein the curing process is performed after the selective spray coating process is finished.
13. The method of packaging of claim 12, further comprising, prior to performing the curing process: and in the process of carrying out the selective spraying treatment, heating the plastic packaging material positioned in the plastic packaging area, wherein the process temperature of the heating treatment is lower than that of the curing treatment.
14. The packaging method of claim 13, wherein the process temperature of the heat treatment is in a range of 20 ℃ to 120 ℃; the process temperature range of the curing treatment is 120-160 ℃.
15. The packaging method of claim 1, wherein the step of forming a re-routing structure comprises: providing a second bearing substrate, and forming the re-wiring structure on the second bearing substrate, wherein the re-wiring structure comprises an interconnection line and a conductive column;
bonding the conductive columns in the corresponding conductive through holes and electrically connecting the conductive columns with the welding pads;
and removing the second bearing substrate.
16. The packaging method of claim 15, wherein the step of forming the re-routing structure on the second carrier substrate comprises: forming a dielectric layer on the second bearing substrate;
imaging the dielectric layer and forming an interconnection groove in the dielectric layer;
filling a conductive material into the interconnection groove, wherein the conductive material also covers the top of the dielectric layer;
forming a patterned mask layer on the conductive material, wherein the patterned mask layer shields the conductive material at the position of the conductive column;
etching the conductive material to the dielectric layer by taking the patterned mask layer as a mask;
and removing the mask layer and the dielectric layer.
17. The packaging method of claim 15, wherein the step of forming the re-routing structure on the second carrier substrate comprises: forming a conductive layer on the second carrier substrate;
etching the conductive layer to form an interconnection line;
forming a sacrificial layer covering the second bearing substrate and the interconnection line;
patterning the sacrificial layer to form a through hole, wherein the through hole is used for defining the position of the conductive column;
forming the conductive post in the via;
and removing the sacrificial layer.
18. The packaging method according to claim 1, further comprising, before the step of attaching the filter to the photosensitive chip: forming a stress buffer layer covering the side wall of the optical filter;
or, after the optical filter is mounted on the photosensitive chip and before the photosensitive chip is temporarily bonded to the first carrier substrate, the method further includes: forming a stress buffer layer covering the side wall of the optical filter;
or, after the optical filter is pasted on the photosensitive chip, and after the photosensitive chip is temporarily bonded to the first carrier substrate, before the plastic package layer is formed, the method further includes: and forming a stress buffer layer covering the side wall of the optical filter.
19. The packaging method according to claim 1, wherein the photosensitive chip is temporarily bonded on the first carrier substrate after the optical filter is mounted on the photosensitive chip.
20. The packaging method of claim 1, wherein the first carrier substrate is removed after the redistribution structure electrically connects the pads.
CN201811605542.6A 2018-12-26 2018-12-26 Packaging method of camera shooting assembly Active CN111370332B (en)

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