CN111368434B - Prediction method of Czochralski method monocrystalline silicon solid-liquid interface based on ANN - Google Patents
Prediction method of Czochralski method monocrystalline silicon solid-liquid interface based on ANN Download PDFInfo
- Publication number
- CN111368434B CN111368434B CN202010146317.1A CN202010146317A CN111368434B CN 111368434 B CN111368434 B CN 111368434B CN 202010146317 A CN202010146317 A CN 202010146317A CN 111368434 B CN111368434 B CN 111368434B
- Authority
- CN
- China
- Prior art keywords
- monocrystalline silicon
- liquid interface
- solid
- growth
- ann
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N20/00—Machine learning
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/04—Architecture, e.g. interconnection topology
- G06N3/045—Combinations of networks
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/08—Learning methods
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/30—Computing systems specially adapted for manufacturing
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010146317.1A CN111368434B (en) | 2020-03-05 | 2020-03-05 | Prediction method of Czochralski method monocrystalline silicon solid-liquid interface based on ANN |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010146317.1A CN111368434B (en) | 2020-03-05 | 2020-03-05 | Prediction method of Czochralski method monocrystalline silicon solid-liquid interface based on ANN |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111368434A CN111368434A (en) | 2020-07-03 |
CN111368434B true CN111368434B (en) | 2023-05-12 |
Family
ID=71208611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010146317.1A Active CN111368434B (en) | 2020-03-05 | 2020-03-05 | Prediction method of Czochralski method monocrystalline silicon solid-liquid interface based on ANN |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN111368434B (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112176397B (en) * | 2020-10-22 | 2023-06-13 | 云南鑫耀半导体材料有限公司 | Circulating water temperature control device for growing single crystals by VGF method and application |
CN112795984B (en) * | 2020-11-23 | 2022-08-09 | 上海新昇半导体科技有限公司 | Method for calculating shape of solid-liquid interface in crystal growth process |
CN112853468A (en) * | 2020-12-31 | 2021-05-28 | 杭州富加镓业科技有限公司 | Conductive gallium oxide preparation method based on deep learning and heat exchange method |
CN112859771A (en) * | 2020-12-31 | 2021-05-28 | 杭州富加镓业科技有限公司 | Quality prediction method, preparation method and system of gallium oxide based on deep learning and model-guiding method |
CN112853470A (en) * | 2020-12-31 | 2021-05-28 | 杭州富加镓业科技有限公司 | Quality prediction method, preparation method and system of gallium oxide based on deep learning and Czochralski method |
CN112863620A (en) * | 2020-12-31 | 2021-05-28 | 杭州富加镓业科技有限公司 | Quality prediction method, preparation method and system of conductive gallium oxide based on deep learning and Czochralski method |
CN114411236B (en) * | 2022-02-10 | 2023-06-27 | 北京青禾晶元半导体科技有限责任公司 | Crystal growth simulating method, crystal growth simulating method and crystal growth simulating device |
CN114836823B (en) * | 2022-06-08 | 2024-03-19 | 连城凯克斯科技有限公司 | Crystal growth diameter prediction method of monocrystalline silicon melting furnace |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05227338A (en) * | 1992-02-12 | 1993-09-03 | Ricoh Co Ltd | Image forming device provided with learning function |
CN101976343A (en) * | 2010-09-03 | 2011-02-16 | 北京师范大学 | Technology and device for identifying diatom in lake sediments |
CN103793771A (en) * | 2012-11-01 | 2014-05-14 | 西安申科电子研究所 | Heat pump after-sale service management system |
CA2844776A1 (en) * | 2013-03-08 | 2014-09-08 | IFP Energies Nouvelles | Exploration method for a hydrocarbon deposit containing organo-sulphur compounds using a thermo-kinetic model and a compositional reservoir simulation |
CN105868425A (en) * | 2015-01-19 | 2016-08-17 | 北京大学 | Multi-rigid-body impact simulation method based on accurate wave effect |
CN105913803A (en) * | 2010-12-02 | 2016-08-31 | 伊格尼斯创新公司 | System and methods for thermal compensation in amoled displays |
CN106529010A (en) * | 2016-11-01 | 2017-03-22 | 深圳供电局有限公司 | Method for designing housing of anti-condensation ring main unit by using finite element model |
CN106709592A (en) * | 2015-11-13 | 2017-05-24 | 中美矽晶制品股份有限公司 | Melt parameter prediction method |
CN107391789A (en) * | 2017-06-12 | 2017-11-24 | 西安理工大学 | Silicon melt reconstructing temperature field method based on free surface measured temperature and characteristic function interpolation |
CN109023509A (en) * | 2018-08-31 | 2018-12-18 | 包头美科硅能源有限公司 | A method of preparing solar level n type single crystal silicon |
-
2020
- 2020-03-05 CN CN202010146317.1A patent/CN111368434B/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05227338A (en) * | 1992-02-12 | 1993-09-03 | Ricoh Co Ltd | Image forming device provided with learning function |
CN101976343A (en) * | 2010-09-03 | 2011-02-16 | 北京师范大学 | Technology and device for identifying diatom in lake sediments |
CN105913803A (en) * | 2010-12-02 | 2016-08-31 | 伊格尼斯创新公司 | System and methods for thermal compensation in amoled displays |
CN103793771A (en) * | 2012-11-01 | 2014-05-14 | 西安申科电子研究所 | Heat pump after-sale service management system |
CA2844776A1 (en) * | 2013-03-08 | 2014-09-08 | IFP Energies Nouvelles | Exploration method for a hydrocarbon deposit containing organo-sulphur compounds using a thermo-kinetic model and a compositional reservoir simulation |
CN105868425A (en) * | 2015-01-19 | 2016-08-17 | 北京大学 | Multi-rigid-body impact simulation method based on accurate wave effect |
CN106709592A (en) * | 2015-11-13 | 2017-05-24 | 中美矽晶制品股份有限公司 | Melt parameter prediction method |
CN106529010A (en) * | 2016-11-01 | 2017-03-22 | 深圳供电局有限公司 | Method for designing housing of anti-condensation ring main unit by using finite element model |
CN107391789A (en) * | 2017-06-12 | 2017-11-24 | 西安理工大学 | Silicon melt reconstructing temperature field method based on free surface measured temperature and characteristic function interpolation |
CN109023509A (en) * | 2018-08-31 | 2018-12-18 | 包头美科硅能源有限公司 | A method of preparing solar level n type single crystal silicon |
Non-Patent Citations (3)
Title |
---|
Harper ES等.Machine accelerated nano-targeted inhomogeneous .《IEEE》 .2019,第5页. * |
任俊超 ; 刘丁 ; 万银 ; .基于混合集成建模的硅单晶直径自适应非线性预测控制.自动化学报.(第05期),第121-125页. * |
孙仁金 ; 王守春 ; 赵锁奇 ; .基于人工神经网络的含硫原油VGO饱和份含量预测研究.计算机与应用化学.(第11期),第359-362页. * |
Also Published As
Publication number | Publication date |
---|---|
CN111368434A (en) | 2020-07-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN111368434B (en) | Prediction method of Czochralski method monocrystalline silicon solid-liquid interface based on ANN | |
Qi et al. | Optimization of the melt/crystal interface shape and oxygen concentration during the Czochralski silicon crystal growth process using an artificial neural network and a genetic algorithm | |
TWI651440B (en) | Single crystal furnace | |
US20090193936A1 (en) | Methods and apparatus for an oxygen furnace quality control system | |
Dang et al. | Optimization of the controlling recipe in quasi-single crystalline silicon growth using artificial neural network and genetic algorithm | |
CN106649986B (en) | One kind is based on PROCAST emulation platform to horizontal continuous casting of copper parameter optimization matching process | |
CN108647373A (en) | A kind of industrial process flexible measurement method based on xgboost models | |
Dang et al. | Adaptive process control for crystal growth using machine learning for high-speed prediction: application to SiC solution growth | |
CN111375746B (en) | High-temperature alloy single crystal blade directional solidification method based on solid-liquid interface steady control | |
CN110427715B (en) | Method for predicting furnace hearth thermal state trend based on time sequence and multiple dimensions of blast furnace | |
CN113549997A (en) | Method and apparatus for growing single crystal, and single crystal | |
CN113378939A (en) | Structure digital twin modeling and parameter identification method based on physical driving neural network | |
CN107085371A (en) | Crude(oil)unit economic model forecast control method based on data-driven | |
CN111639111A (en) | Water transfer engineering-oriented multi-source monitoring data deep mining and intelligent analysis method | |
CN108710729A (en) | A kind of aluminum alloy heat forming technology formulating method based on organization and performance control | |
Chen et al. | Mesoscale modeling of dynamic recrystallization: multilevel cellular automaton simulation framework | |
CN106202686B (en) | A kind of objective design method of turbine disk isothermal die forging process preform blank | |
Wen et al. | Machine learning-assisted constitutive modeling of a novel powder metallurgy superalloy | |
CN107832880B (en) | Blast furnace state variable prediction method based on material distribution parameters | |
CN115857315B (en) | Semiconductor silicon single crystal growth model prediction control method based on event triggering | |
CN116736907A (en) | Intelligent regulation and control method for production temperature of low borosilicate glass | |
CN105574264A (en) | SVR soft measuring method for kiln tail decomposition rate of cement decomposing furnace | |
JP2919532B2 (en) | Analysis condition setting method for thermal fluid analysis in furnace | |
CN111861041A (en) | Method for predicting dynamic recrystallization type flowing stress of Nb microalloyed steel | |
Huang et al. | Multiobjective Optimization of Process Parameters of Silicon Single Crystal Growth |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information |
Address after: 014010 No.1 Tuoye Road, metal deep processing park, Kundulun District, Baotou City, Inner Mongolia Autonomous Region Applicant after: BAOTOU MEIKE SILICON ENERGY Co.,Ltd. Applicant after: Jiangsu Meike Solar Energy Technology Co.,Ltd. Address before: 014010 No.1 Tuoye Road, metal deep processing park, Kundulun District, Baotou City, Inner Mongolia Autonomous Region Applicant before: BAOTOU MEIKE SILICON ENERGY Co.,Ltd. Applicant before: JIANGSU GAOZHAO NEW ENERGY DEVELOPMENT Co.,Ltd. |
|
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: 014010 No.1 Tuoye Road, metal deep processing park, Kundulun District, Baotou City, Inner Mongolia Autonomous Region Applicant after: BAOTOU MEIKE SILICON ENERGY Co.,Ltd. Applicant after: Jiangsu Meike Solar Energy Technology Co.,Ltd. Address before: 014010 No.1 Tuoye Road, metal deep processing park, Kundulun District, Baotou City, Inner Mongolia Autonomous Region Applicant before: BAOTOU MEIKE SILICON ENERGY Co.,Ltd. Applicant before: Jiangsu Meike Solar Energy Technology Co.,Ltd. |
|
CB02 | Change of applicant information | ||
GR01 | Patent grant | ||
GR01 | Patent grant |