CN106709592A - Melt parameter prediction method - Google Patents
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- CN106709592A CN106709592A CN201610681001.6A CN201610681001A CN106709592A CN 106709592 A CN106709592 A CN 106709592A CN 201610681001 A CN201610681001 A CN 201610681001A CN 106709592 A CN106709592 A CN 106709592A
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000002844 melting Methods 0.000 claims abstract description 103
- 230000008018 melting Effects 0.000 claims abstract description 103
- 239000013078 crystal Substances 0.000 claims abstract description 62
- 230000014509 gene expression Effects 0.000 claims abstract description 21
- 238000004458 analytical method Methods 0.000 claims abstract description 7
- 238000012417 linear regression Methods 0.000 claims abstract description 6
- 238000005516 engineering process Methods 0.000 claims description 61
- 239000000155 melt Substances 0.000 claims description 49
- 238000007499 fusion processing Methods 0.000 claims description 22
- 230000008859 change Effects 0.000 claims description 14
- 230000008569 process Effects 0.000 abstract description 5
- 238000010309 melting process Methods 0.000 abstract 2
- 230000006911 nucleation Effects 0.000 abstract 1
- 238000010899 nucleation Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 8
- 238000001514 detection method Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000012768 molten material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
The invention provides a method for predicting melt parameters, which is suitable for a crystal growth process. The prediction method comprises the following steps: during the melting process of the previous crystal growth process, a plurality of batches of melt height data of a plurality of original time points are collected. Melt height data is obtained for each melting stage. And respectively calculating a plurality of melting speed values and a plurality of melting speed time points of each melting stage. And obtaining a plurality of melting speed relational expressions respectively corresponding to the melting stages by utilizing linear regression analysis to serve as a melting speed prediction model. During the melting process of the current nucleation process, the current melt height is measured at the current time point, and a predicted time point to reach the ideal melt height is predicted using the selected melt velocity relationship.
Description
Technical field
The invention relates to a kind of Forecasting Methodology, and it is molten more particularly to can operate with the one kind in polysilicon crystal growing technology
Expect the Forecasting Methodology of parameter.
Background technology
With the new line of environmental consciousness, the exploitation and utilization of the renewable sources of energy are also little by little taken seriously.In numerous kinds
The renewable sources of energy among, the sun is readily susceptible to obtain and utilizes, so many manufacturers and research institute have put into solar energy one after another
Industry.In numerous Related products, solar cell has been realized in converting the solar into the target of electric energy, and extensive
Be used in various electronic products.The primary raw material of solar cell includes polysilicon, and in order to largely produce solar-electricity
Pond, polysilicon process is also little by little taken seriously.
The processes such as the crystal growing technology of polysilicon is filled, vacuumized, heating, melting including melt, brilliant, annealing long.In fusing
During, it is necessary to control the melt of unfused melt in quartz crucible regularly highly, that is, control the residual of unfused melt
Surplus, preferably adjusts every ambient parameter, e.g. heating-up temperature etc. whereby.Specifically, in whole fusion process, need
Melt is constantly detected highly with quartz pushrod.However, detect unfused melt highly in the way of surveying, during by causing
Between, the waste of quartz bar even manpower.Therefore, a Forecasting Methodology for preferred melt height, is still those skilled in the art
One of target of effort.
The content of the invention
The present invention provides a kind of Forecasting Methodology of melt parameter, can assist pre- among the heating process of crystal growing technology
The melt of unfused melt is surveyed highly, with the consuming of the time of reducing and cost.
The Forecasting Methodology of the melt parameter that the embodiment of the present invention is proposed, it is adaptable to crystal growing technology.Under Forecasting Methodology includes
Row step：A () collects many melt number of degrees high of multiple original time points in a fusion process of each previous crystal growing technology
According to wherein the fusion process includes multiple melting stages.B () obtains the melt number of degrees high of each melting stage
According to a stage start time point of the melting stage of previous crystal growing technology described in each of which is respectively corresponding to each described
The one time shaft starting point of melting stage, to integrate the melt altitude information of the described previous crystal growing technology for belonging to different, and
And the time shaft starting point based on each melting stage is when obtaining the multiple data corresponding to the melt altitude information
Between point.C () is according to each melting stage among, belong to the melt altitude information of the same previous crystal growing technology
And the data time point, the molten speed value of multiple of each melting stage is calculated respectively and corresponds to many of the molten speed value
Individual molten fast time point.D () is returned according to the described molten speed value of each melting stage and the molten fast time point using linear
Analysis is returned to obtain a plurality of molten fast relational expression for corresponding to the melting stage respectively as a molten speed forecast model.E () is in a mesh
In the fusion process of preceding crystal growing technology, a current melt is measured highly at a current time point.F () is according to described molten at present
Material height, judges the melting stage residing for the current crystal growing technology to select the suitable molten fast relational expression.G () utilizes institute
The described molten fast relational expression of selection, obtains one and melts speed and one at present by the current melt height and the current time point
Current constant.H () melts fast and described current constant at present by described, a prediction melt of one subsequent point in time of prediction is high
Degree, wherein the subsequent point in time lags behind the current time point.(i) relatively more described prediction melt height and a preferable melt
Highly.If j () described prediction melt height is less than a threshold values with an absolute difference of a preferable melt height, when described follow-up
Between point be to reach a predicted time point of the preferable melt height.If (k) described prediction melt height and the preferable melt
The absolute difference of height is not less than the threshold values, then using the subsequent point in time as the current time point, with described
Prediction melt height highly, re-starts step (g) as the current melt.
In one embodiment of this invention, the molten speed value of melting stage is in the melting stage, to belong to same previous length
Brilliant technique, and the height change for two melt altitude informations between corresponding adjacent two data time point, and
The molten speed value corresponding molten fast time point is adjacent two data time corresponding to described two melt altitude informations
The center time point of point.
In one embodiment of this invention, subsequent point in time differs a chronomere with current time point, and time list
Position includes one minute.
In one embodiment of this invention, in the fusion process of crystal growing technology, the melting stage makes a reservation for according at least one
Melt is highly switched over.
In one embodiment of this invention, step (a) further includes according at least one predetermined melt highly, to recognize respectively
Melting stage corresponding to melt altitude information.
In one embodiment of this invention, if preferable melt is highly one of predetermined melt height, and predict that melt is high
Degree is less than the threshold values with the absolute difference of preferable melt height, then the subsequent point in time is that the multiple of current crystal growing technology melts
The prediction start time point in one of change stage or finishing time point for multiple melting stage.
In one embodiment of this invention, the threshold values be selected from a threshold range, and threshold range be 0.5 millimeter extremely
2 millimeters.
Based on above-mentioned, the Forecasting Methodology of the melt parameter that the embodiment of the present invention is provided, by many of previous crystal growing technology
Individual melt altitude information, sets up the molten fast forecast model of correspondence fusion process.Then, in the fusion process of current crystal growing technology
In, by the current melt height measured by current time point and molten speed forecast model, can further predict by mesh
Preceding melt highly reaches the predicted time point of preferable melt height.Therefore, the Forecasting Methodology of melt parameter is not required to repeatedly carry out
The melt detection of essence, it is possible to reduce the consuming of time and cost.
It is that features described above of the invention and advantage can be become apparent, special embodiment below, and coordinate institute's accompanying drawings
It is described in detail below.
Brief description of the drawings
Figure 1A and Figure 1B is the flow chart of the Forecasting Methodology of the melt parameter proposed according to one embodiment of the invention；
Fig. 2 is the example schematic of the melt altitude information proposed according to one embodiment of the invention；
Fig. 3 A, Fig. 3 B and Fig. 3 C are the melting stage proposed according to one embodiment of the invention corresponding melt altitude informations
Schematic diagram；
Fig. 4 is the molten speed value and the schematic diagram at molten speed time point proposed according to one embodiment of the invention；
Fig. 5 is the schematic diagram of the molten fast forecast model proposed according to one embodiment of the invention；
Fig. 6 is the schematic diagram of the molten fast forecasting system proposed according to one embodiment of the invention.
Symbol description：
S105、S110、S115、S120、S125、S130、S135、S140、S145、S150、S155：The prediction of melt parameter
The step of method
PG11~PG16、PG21~PG26、PG31~PG36：Melt altitude information
G1~G3：Previous crystal growing technology
R1、R2、R3：Molten speed relational expression
TG11~TG16、TG21~TG26、TG31~TG36：Original time point
TG1S11~TG1S13、TG2S11~TG2S13、TG3S11~TG3S13、TG1S23~TG1S25、TG2S23~TG2S25、TG3S23~
TG3S25、TG1S35~TG1S36、TG2S35~TG2S36、TG3S35~TG3S36：Data time point
O：Time shaft starting point
MG1S11~MG1S12、MG2S11~MG2S12、MG3S11~MG3S12、MG1S21~MG1S22、MG2S21~MG2S22、MG3S21~
MG3S22、MG1S31、MG2S31、MG3S31：Molten speed value
MTG1S11、MTG1S12、MTG1S21、MTG1S22、MTG1S31：Molten speed time point
S1、S2、S3：Melting stage
h1*、h2*、h3*：Predetermined melt is highly
600：Molten speed forecasting system
620：Measurement apparatus
640：Computing device
660：Database.
Specific embodiment
The specific embodiment of the Forecasting Methodology of the melt parameter for providing the present invention below in conjunction with the accompanying drawings elaborates.
With detailed reference to one exemplary embodiment of the invention, the example of the one exemplary embodiment is illustrated in the accompanying drawings.
In addition, in place of all possibility, the component/component using identical label in schema and implementation method represents same or like part.
In general, among the fusion process of polysilicon crystal growing technology, with unfused silicon melt height change (also
That is the residual volume change of silicon melt), the parameters in technique must also change therewith.In other words, fusion process can be with technique
The variation of parameter and be divided into multiple melting stages.When the height of melt is down to a predetermined melt height, representative was melted
Journey is also required to simultaneously march toward next melting stage, or represents fusion process and be over.Therefore, between the melting stage
Can say switched over according to pre-determined predetermined melt height.In general, the melt height of unfused melt can be with
Detected by quartz pushrod.However, switching time or the time of finishing in order to precisely judge the melting stage, melt is highly
Detection times will certainly increase.On the other hand, the quantity of melting stage is also one of key element of influence detection times.With molten
Expect the rising of the detection times of height, the consuming of time and cost can also be corresponded to and risen.Meanwhile, continually entered using quartz pushrod
The detection of row melt height can also influence the quality of polysilicon.
The Forecasting Methodology of the melt parameter that the embodiment of the present invention is proposed is multiple original by previous crystal growing technology
The many melt altitude informations at time point melt speed forecast model to obtain.Molten speed forecast model is more used to predict current crystal growing technology
Fusion process in multiple time points prediction melt highly.Figure 1A and Figure 1B is according to melting that one embodiment of the invention is proposed
Expect the flow chart of the Forecasting Methodology of parameter.Reference picture 1A and Figure 1B, step S105, first in the fusing of each previous crystal growing technology
During, collect many melt altitude informations of multiple original time points.In general, fusion process includes multiple fusing ranks
Section.Fig. 2 is the example schematic of the melt altitude information proposed according to one embodiment of the invention.Reference picture 1A, Figure 1B and figure
2, in the multiple crystal growing technologies for having carried out, many melt altitude informations of multiple original time points can be collected in the lump.
Using the initial time of fusion process as origin, many melt altitude information P of previous crystal growing technology G1~G3G11~PG16、
PG21~PG26、PG31~PG36 such as Fig. 2 show.Meanwhile, previous crystal growing technology G1~G3's is each based on known predetermined melt highly
The individual melting stage can clearly be recognized.Following examples will with melting stage S1, S2, S3 and predetermined melt height h1*,
H2*, h3* assist explanation, but the present invention does not limit the quantity and details of melting stage and predetermined melt height.It is same to be worth
It is noted that in the present embodiment, selection and the quantity explanation merely for convenience of melt altitude information and original time point, but
The invention is not restricted to this.
Specifically, if predetermined melt height h1*, h2*, h3* represent the end of melting stage S1, S2, S3 respectively, with
Melt altitude information PG11~PG16 understand compared to predetermined melt height h1*, h2*, h3*, melt altitude information PG11 is corresponding
Original time point TG11 to melt altitude information PG13 corresponding original time point TG13 belong to melting stage S1.Melt altitude information
PG13 corresponding original time point TG13 to melt altitude information PG15 corresponding original time point TG15 is melting stage S2.Melt
Altitude information PG15 corresponding original time point TG15 to melt altitude information PG16 corresponding original time point TG16 is the melting stage
S3.Similarly, melt altitude information PG21~PG26、PG31~PG36 with corresponding original time point TG21~TG26、TG31~TG36
Affiliated melting stage S1~S3 can also be recognized according to preceding method.
Referring again to the Forecasting Methodology shown in Figure 1A and Figure 1B, step S110：Obtain the melt of each melting stage highly
Data.More specifically, among step S110, the melt altitude information of all of previous crystal growing technology is molten corresponding to
The change stage is grouped, with the melt altitude information of clearly each melting stage.Fig. 3 A, Fig. 3 B and Fig. 3 C are according to the present invention one
The schematic diagram of the melting stage correspondence melt altitude information that embodiment is proposed.Reference picture 1A, Figure 1B, Fig. 2, Fig. 3 A, Fig. 3 B with
The stage start time point of Fig. 3 C, the melting stage S1~S3 of each previous crystal growing technology G1~G3 corresponds to melt rank respectively
The time shaft starting point of section S1~S3, to integrate the melt altitude information P of the previous crystal growing technology G1~G3 for belonging to differentG11~
PG16、PG21~PG26、PG31~PG36.Specifically, by taking previous crystal growing technology G1 as an example, during the stage starting of melting stage S2
Between point be original time point TG13, and the stage start time point of melting stage S3 is original time point TG15.Therefore, as Fig. 3 A,
Shown in Fig. 3 B and Fig. 3 C, stage start time point (the original time point T of the melting stage S2 of previous crystal growing technology G1G13) it is more right
Should be translated and the time shaft starting point O of the melting stage S2 that arrives.Similarly, the stage of the melting stage S3 of previous crystal growing technology G1
Start time point (original time point TG15) also corresponding to move to the time shaft starting point O of melting stage S3.
Still further, stage start time point (the original time point of the melting stage S2 of previous crystal growing technology G2
TG23) and previous stage start time point (the original time point T of the melting stage S2 of crystal growing technology G3G33) also all correspond to molten
The time shaft starting point of change stage S2 and carry out time shaft translation.Specifically, for different previous crystal growing technology G1~G3's
The purpose that melting stage S2 is translated is to unify the original bench mark of melting stage S2.Due to previous crystal growing technology G1~G3's
The stage start time point of melting stage S2 is respectively different original time point TG13、TG23、TG33.Therefore, crystalline substance will previously be grown
Stage start time point (the original time point T of the melting stage S2 of technique G1~G3G13、TG23、TG33) unify to one respectively
Identical time shaft starting point O contributes to follow-up calculating.Similarly, the stage of the melting stage S3 of previous crystal growing technology G1~G3
Start time point (original time point TG15、TG25、TG35) also all unify respectively to an identical time shaft starting point O.
It is worth noting that, in the present embodiment, because melting stage S1 is first melting stage in fusion process,
Therefore previously the melting stage S1 of crystal growing technology G1~G3 should have identical stage start time point.Although actual measurement is molten
Material altitude information PG11、PG21、PG31 has different original time point TG11、TG21、TG31, but melt altitude information PG11、
PG21、PG31 is not the stage start time point of the melting stage S1 of previous crystal growing technology G1~G3.Therefore, correspondence fusing rank
The melt altitude information P of section S1G11~PG13、PG21~PG23、PG31~PG33 and original time point TG11~TG13、TG21~
TG23、TG31~TG33 also just as shown in Figure 3A, it is not necessary to correspondence adjustment.
Referring again to Fig. 3 A, Fig. 3 B and Fig. 3 C, the melt altitude information P for each melting stage S1, S2, S3G11~
PG16、PG21~PG26、PG31~PG36, Forecasting Methodology is based more on the time shaft starting point O of each melting stage S1, S2, S3 to obtain
Corresponding multiple data time points.For example, as shown in Fig. 3 A, Fig. 3 B and Fig. 3 C, the melt altitude information of melting stage S1
PG11~PG13、PG21~PG23、PG31~PG33 is corresponding to data time point TG1S11~TG1S13、TG2S11~TG2S13、TG3S11~
TG3S13.The melt altitude information P of melting stage S2G13~PG15、PG23~PG25、PG33~PG35 is corresponding to data time point
TG1S23~TG1S25、TG2S23~TG2S25、TG3S23~TG3S25.The melt altitude information P of melting stage S3G15~PG16、PG25~
PG26、PG35~PG36 is corresponding to data time point TG1S35~TG1S36、TG2S35~TG2S36、TG3S35~TG3S36.It is noticeable
It is, due to the melt altitude information P of melting stage S1G11~PG13、PG21~PG23、PG31~PG33 are not carried out on a timeline
Corresponding adjustment, thus foregoing melting stage S1 data time point TG1S11~TG1S13、TG2S11~TG2S13、TG3S11~TG3S13
Equivalent to original time point TG11~TG13、TG21~TG23、TG31~TG33。
Referring again to Figure 1A, Figure 1B, Fig. 2 and Fig. 3 A~Fig. 3 C, in step sl 15, according in each melting stage, belong to
In the melt altitude information and data time point of same previous crystal growing technology, the multiple that each melting stage is calculated respectively melts
The multiple molten speed time point of speed value and the correspondence molten speed value.Fig. 4 is the molten speed value proposed according to one embodiment of the invention
And the schematic diagram at molten speed time point.Reference picture 1A, Figure 1B and Fig. 4, in melting stage S1, previous crystal growing technology G1 includes molten
Material altitude information PG11~PG13, difference corresponding data time point TG1S11~TG1S13.Due to the melt altitude information PG11~
PG13 have continuity in time, so according to melt altitude information PG11~PG1Height change indicated by 3, can enter one
Step ground speculates molten speed of the melt in melting stage S1.
Specifically, it is change of the melt height in any time section to melt speed value.Therefore, by taking Fig. 4 as an example, belong to same
Individual previous crystal growing technology G1 and on a timeline be two adjacent melt altitude information PG11、PG12, at corresponding two
Data time point TG1S11、TG1S1Height change between 2, as melts speed value MG1S11.In fig. 4, speed value M is meltedG1S1Corresponding to 1
Molten fast time point MTG1S11 is data time point TG1S11、TG1S12 center time point.Specifically, speed value M is meltedG1S11 is molten
Material altitude information PG11、PG12 slope on a timeline.In other words, according to melt altitude information PG11、PG12 and data time
Point TG1S11、TG1S12, can further obtain with molten speed value MG1S11 as slope linear equation with one unknown formula.The unitary one
The form of power formula can be summarized as follows.
Melt height (H)=slope (SL) x data time point (DT)+constant (C) ... ... ... (1)
Similarly, by melt altitude information PG12、PG13 in two corresponding data time point TG1S12、TG1S1Between 3
Height change, can be in the hope of molten speed value MG1S12, and molten speed time point MTG1S12 is data time point TG1S12、TG1S13 time
Midpoint.
Still further, the molten speed value M of melting stage S2G1S21、MG1S22 with molten fast time point MTG1S21、MTG1S22 can
With by melt altitude information PG13~PG15 and data time point TG1S23~TG1S25 calculating are tried to achieve.The molten speed of melting stage S3
Value MG1S31 with molten fast time point MTG1S31 can be by melt altitude information PG15~PG16 and data time point TG1S35~
TG1S36 calculating are tried to achieve.What is more, by the melt altitude information P of different previously crystal growing technologies G2, G3G21~PG26、PG31~
PG36 and data time point TG2S11~TG2S13、TG3S11~TG3S13、TG2S23~TG2S25、TG3S23~TG3S25、TG2S35~
TG2S36、TG3S35~TG3S36, the molten speed value of multiple and molten fast time point for belonging to different melting stage S1~S3 can be obtained.
Referring again to Figure 1A and Figure 1B, in step S120, according to the molten speed value of each melting stage and molten speed time point,
The a plurality of molten fast relational expression for corresponding to the melting stage respectively is further obtained using linear regression analysis as molten speed prediction mould
Type.Fig. 5 is the schematic diagram of the molten speed forecast model proposed according to one embodiment of the invention.Reference picture 1A~Figure 1B, Fig. 2, figure
The molten speed value M of 3A~Fig. 3 C and Fig. 4~Fig. 5, melting stage S1G1S11~MG1S12、MG2S11~MG2S12、MG3S11~MG3S12 points
It is not the melt altitude information P by previous crystal growing technology G1, G2, G3G11~PG13、PG21~PG23 and PG31~PG33 and ask
.For molten speed value MG1S11~MG1S12、MG2S11~MG2S12、MG3S11~MG3S12, by linear regression analysis, can be further
Take correspondence melting stage S1 time with it is molten speed value molten fast relational expression R1.The form of molten speed relational expression is for example summarized as follows.
Slope (SL)=regression constant (RC)+regression coefficient (RW) x regression times point (RT) ... (2)
Similarly, based on molten speed value MG1S21~MG1S22、MG2S21~MG2S22、MG3S21~MG3S22, therefore, linear regression point
Analysis, can further take the time of correspondence melting stage S2 and the molten fast relational expression R2 of molten speed value.Based on molten speed value MG1S31、
MG2S31、MG3S31, by linear regression analysis, can further take the time of correspondence melting stage S3 and the molten speed of molten speed value
Relational expression R3.It is molten speed forecast model that molten speed relational expression R1, R2 and R3 further unite whole.It should be noted that molten speed is closed
The difference for being formula R1, R2 and R3 is regression constant RC and regression coefficient RW.The recurrence of molten speed relational expression R1, R2 and R3 is normal
Numerical example is as being respectively RC1, RC2 and RC3, and regression coefficient is for example respectively RW1, RW2 and RW3.It should be noted that returning normal
The ratio of several RC and regression coefficient RW is definite value, and the definite value grows crystalline substance demand and difference with different.
Referring again to Figure 1A and Figure 1B, in step s 125, in the fusion process of current crystal growing technology, first current
Time point measures current melt highly.Then, in step s 130, according to current melt highly, current crystal growing technology institute is judged
The melting stage at place is selecting suitable molten speed relational expression.As foregoing, in the fusion process of current crystal growing technology, rank is melted
The switching of section is based on predetermined melt height h1*, h2*, h3* set in advance.Specifically, when the melt of unfused melt is high
When degree is respectively lower than predetermined melt height h1*, h2*, h3*, that is, represent the end of melting stage S1, S2, S3.Therefore, based on reality
Border measurement current melt highly, can further determine current crystal growing technology carry out to which melting stage S1, S2,
S3, and accordingly select suitable molten speed relational expression R1, R2 or R3.
As foregoing, melt speed relational expression R1, R2 or R3 meets the form of equation (2), difference is only regression constant RC
With the difference of regression coefficient RW.For example, it is assumed that in the current melt height H1 correspondences measured by current time point CT1 to molten
Change stage S2, then accordingly select molten speed relational expression R2.Then, in step S135, using selected molten fast relational expression R2,
Molten speed SL1 and current constant C1 at present is obtained by current melt height H1 and current time point CT1.Specifically, pass through
The calculation that molten speed relational expression R2 obtains molten speed SL1 at present is expressed as follows.
SL1=RC2+RW2x CT1 ... ... ... ... ... ... ... ... (3)
After molten speed SL1 at present is obtained, due to meeting the pass of equation (1) between melt height, time point and molten speed
System, therefore by current melt height H1, current time point CT1 and current molten speed SL1, can further try to achieve current constant
C1 is as follows.
C1=H1-SL1x CT1 ... ... ... ... ... ... ... ... ... (4)
It should be noted that the data time point DT, regression time point RT and current time point CT1 are only that definition is chatted
The difference stated, but it is essentially the time point on same time shaft.
Reference picture 1A and Figure 1B, in step S140, melt speed SL1 and current constant C1, further in advance by current
Prediction the melt height Ha, wherein subsequent point in time LT for surveying subsequent point in time LT lag behind current time point CT1.Specifically,
Subsequent point in time LT lags behind mono- chronomere of current time point CT1, and the chronomere includes one minute, but not with this
It is limited.In other words, prediction melt height Ha can be tried to achieve as follows.
Ha=SL1*LT+C1 ... ... ... ... ... ... ... ... ... (5)
For the prediction melt height Ha for trying to achieve, according to step S145, further highly compared with preferable melt
Compared with.In the present embodiment, preferable melt height can be one of foregoing predetermined melt height h1*, h2*, h3*.With this implementation
For example, because current melt height H1 is corresponded to melting stage S2, therefore preferable melt is highly corresponded to predetermined melt highly
h2*.Then, according to Forecasting Methodology the step of S150, if prediction melt height Ha is with preferable melt height, and (predetermined melt is highly
H2* absolute difference (i.e. the absolute value of difference)) is less than threshold values, then subsequent point in time LT is and reaches preferable melt height h2*
Predicted time point.Specifically, subsequent point in time LT finishing time point for melting stage S2, and can be as fusing rank
The prediction start time point of section S3.In other words, subsequent point in time LT is the prediction of one of the melting stage of current crystal growing technology
Begin the finishing time point of time point or melting stage.In the present embodiment, threshold values is selected from a threshold range, and threshold range example
In this way 0.5 millimeter (mm) to 2 millimeters (mm).
Comparatively, according to Forecasting Methodology the step of S155, if prediction melt height Ha is exhausted with ideal melt height h2*
Threshold values is not less than to difference value, then using subsequent point in time LT as current time point CT1, to predict melt height Ha as current
Melt height H1, S135 the step of re-start Forecasting Methodology.Consequently, it is possible to pass through constantly to extend on a timeline, finally
A subsequent point in time LT can be reached, it is the predicted time point for reaching preferable melt height h2*.
Fig. 6 is the schematic diagram of the molten fast forecasting system proposed according to one embodiment of the invention.Reference picture 6, melts speed prediction
System 600 includes measurement apparatus 620, computing device 640 and database 660.Measurement apparatus 620 are used in crystal growing technology,
Carry out the measurement of melt height.During database 660 is then used to store previous crystal growing technology, many melts of multiple original time points
Altitude information.Computing device 640 is then used to perform the Forecasting Methodology of the melt parameter that previous embodiment is proposed, to obtain molten speed
Forecast model, and among the fusion process of current crystal growing technology, using molten fast forecast model and in current time point institute
The current melt surveyed highly predicts the predicted time point for reaching preferable melt height.
In sum, the Forecasting Methodology of the melt parameter that the embodiment of the present invention is provided, by many of previous crystal growing technology
Individual melt altitude information, sets up the molten fast forecast model of correspondence fusion process.Then, in the fusion process of current crystal growing technology
In, by the current melt height measured by current time point and molten speed forecast model, can further predict by mesh
Preceding melt highly reaches the predicted time point of preferable melt height.Therefore, the Forecasting Methodology of melt parameter is not required to repeatedly carry out
The melt detection of essence, it is possible to reduce the consuming of time and cost.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, under the premise without departing from the principles of the invention, can also make some improvements and modifications, and these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (7)
1. a kind of Forecasting Methodology of melt parameter a, it is adaptable to crystal growing technology, it is characterised in that the Forecasting Methodology includes：(a)
In a fusion process of each previous crystal growing technology, many melt altitude informations of multiple original time points, wherein institute are collected
Stating fusion process includes multiple melting stages；
B () obtains the melt altitude information of each melting stage, previous crystal growing technology is described described in each of which
The one stage start time point of melting stage is respectively corresponding to a time shaft starting point of each melting stage, is belonged to integrating
The melt altitude information of different described previous crystal growing technologies, and the time shaft based on each melting stage
Starting point obtains the multiple data time points corresponding to the melt altitude information；
C () is according to each melting stage among, belong to the melt altitude information of the same previous crystal growing technology
And the data time point, the molten speed value of multiple of each melting stage is calculated respectively and corresponds to many of the molten speed value
Individual molten fast time point；
D () is taken according to the described molten speed value of each melting stage and the molten fast time point using linear regression analysis
The a plurality of molten fast relational expression of the melting stage must respectively be corresponded to as a molten speed forecast model；
E () measures a current melt highly in the fusion process of a current crystal growing technology at a current time point；
F () highly, judges the melting stage residing for the current crystal growing technology to select suitable institute according to the current melt
State molten speed relational expression；
G () utilizes the selected molten fast relational expression, one is obtained by the current melt height and the current time point
Speed and a current constant are melted at present；
H () melts fast and described current constant at present by described, the one of one subsequent point in time of prediction predicts melt highly, wherein
The subsequent point in time lags behind the current time point；
I () relatively more described prediction melt height is with a preferable melt highly；
If j () described prediction melt height is less than a threshold values with an absolute difference of a preferable melt height, when described follow-up
Between point be to reach a predicted time point of the preferable melt height；And
If k () described prediction melt height is not less than the threshold values with the absolute difference of the preferable melt height, with
The subsequent point in time as the current time point, using the prediction melt height as the current melt highly, again
Carry out step (g).
2. the Forecasting Methodology of melt parameter according to claim 1, it is characterised in that the described molten speed of the melting stage
Value is in the melting stage, to belong to the same previous crystal growing technology, and for two melt altitude informations exist
A height change between the corresponding adjacent two data time point, and the corresponding described molten speed of the molten speed value
Time point is a center time point of the adjacent two data time point corresponding to two melt altitude informations.
3. the Forecasting Methodology of melt parameter according to claim 1, it is characterised in that the subsequent point in time and the mesh
Preceding time point differs a chronomere, and the chronomere includes one minute.
4. the Forecasting Methodology of melt parameter according to claim 1, it is characterised in that in the described molten of the crystal growing technology
During change, the melting stage highly switches over according at least one predetermined melt.
5. the Forecasting Methodology of melt parameter according to claim 4, it is characterised in that step (a) is further included：Foundation
At least one predetermined melt highly, respectively recognizes the melting stage corresponding to the melt altitude information.
6. the Forecasting Methodology of melt parameter according to claim 4, it is characterised in that if the preferable melt is highly institute
State one of at least one predetermined melt height, and the absolute difference for predicting melt height and the preferable melt height
Less than the threshold values, then the subsequent point in time is a prediction starting of one of the melting stage of the current crystal growing technology
The one of time point or the melting stage finishes time point.
7. the Forecasting Methodology of melt parameter according to claim 4, it is characterised in that the threshold values is selected from a threshold values model
Enclose, the threshold range is 0.5 millimeter to 2 millimeters.
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| TW104137511 | 2015-11-13 | ||
| TW104137511A TWI586853B (en) | 2015-11-13 | 2015-11-13 | Method of predicting parameters of meltable material |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111368434A (en) * | 2020-03-05 | 2020-07-03 | 包头美科硅能源有限公司 | Prediction method of Czochralski method monocrystalline silicon solid-liquid interface based on ANN |
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| US20020043206A1 (en) * | 2000-02-01 | 2002-04-18 | Memc Electronic Materials,Inc. | Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations |
| CN103215633A (en) * | 2013-04-10 | 2013-07-24 | 衡水英利新能源有限公司 | Method for casting ingots by polycrystalline silicon |
| CN103343388A (en) * | 2013-07-18 | 2013-10-09 | 阿特斯(中国)投资有限公司 | Preparation method for polycrystalline silicon cast ingot |
| CN103668436A (en) * | 2013-12-17 | 2014-03-26 | 东北大学 | System and method for stimulating and predicting melt thermocapillary convection process |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20060005761A1 (en) * | 2004-06-07 | 2006-01-12 | Memc Electronic Materials, Inc. | Method and apparatus for growing silicon crystal by controlling melt-solid interface shape as a function of axial length |
| DE102012108009B4 (en) * | 2012-08-30 | 2016-09-01 | Topsil Semiconductor Materials A/S | Model predictive control of the zone melting process |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020043206A1 (en) * | 2000-02-01 | 2002-04-18 | Memc Electronic Materials,Inc. | Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations |
| CN103215633A (en) * | 2013-04-10 | 2013-07-24 | 衡水英利新能源有限公司 | Method for casting ingots by polycrystalline silicon |
| CN103343388A (en) * | 2013-07-18 | 2013-10-09 | 阿特斯(中国)投资有限公司 | Preparation method for polycrystalline silicon cast ingot |
| CN103668436A (en) * | 2013-12-17 | 2014-03-26 | 东北大学 | System and method for stimulating and predicting melt thermocapillary convection process |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111368434A (en) * | 2020-03-05 | 2020-07-03 | 包头美科硅能源有限公司 | Prediction method of Czochralski method monocrystalline silicon solid-liquid interface based on ANN |
| CN111368434B (en) * | 2020-03-05 | 2023-05-12 | 包头美科硅能源有限公司 | Prediction method of Czochralski method monocrystalline silicon solid-liquid interface based on ANN |
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| TW201716649A (en) | 2017-05-16 |
| TWI586853B (en) | 2017-06-11 |
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