CN111366337A - On-chip polarization rotation testing device and method - Google Patents
On-chip polarization rotation testing device and method Download PDFInfo
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- CN111366337A CN111366337A CN201811601341.9A CN201811601341A CN111366337A CN 111366337 A CN111366337 A CN 111366337A CN 201811601341 A CN201811601341 A CN 201811601341A CN 111366337 A CN111366337 A CN 111366337A
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- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
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Abstract
The embodiment of the invention discloses an on-chip polarization rotation testing device and method, wherein the device comprises a first testing structure and a second testing structure, wherein: the first test structure comprises a first transverse electric TE polarization grating, a second TE polarization grating and a first asymmetric waveguide positioned between the first TE polarization grating and the second TE polarization grating; the second test structure comprises a third TE polarization grating, a transverse magnetic TM polarization grating and a second asymmetric waveguide positioned between the third TE polarization grating and the TM polarization grating; the first asymmetric waveguide and the second asymmetric waveguide are the same in length and are prepared by the same double exposure process. By the embodiment of the invention, whether the double exposure process introduces polarization rotation can be judged at the initial stage of the flow sheet, the design is simple, and the test efficiency is high.
Description
Technical Field
The present application relates to, but not limited to, the field of silicon-based photonic integrated chips, and more particularly, to an on-chip polarization rotation testing apparatus and method.
Background
The optical coupling packaging technology is a key technology for packaging silicon-based photoelectric chips and is used for solving the interconnection problem among the photoelectric chips and between the photoelectric chips and external optical signals. Common coupling methods are grating coupling and SSC (Spot size converter) coupling, where SSC coupling is efficient, 1dB bandwidth is high and polarization insensitive. For SSC coupling, the insertion loss is greatly affected by the width of the top end of the silicon waveguide, and the insertion loss of SSC coupling is smaller as the width of the top end is narrower. The Double exposure process (Double Pattern) can obtain a tapered waveguide with a very sharp top end, can greatly reduce the insertion loss of the SSC, and is one of the common preparation methods of the SSC at present.
The double exposure can greatly reduce the insertion loss of the SSC, but may cause different inclination angles of two side walls of the graded waveguide. In the waveguide with similar width and height and unequal inclination angles of two side walls, the conversion of TE (Transverse electric) and TM (Transverse magnetic) polarization modes is very easy to occur, which is very disadvantageous for the optical package. It is essential to test the polarization state transformation that may be caused by the double exposure in the initial stage of the flood, which reduces the risk of flood failure.
Disclosure of Invention
The embodiment of the invention provides an on-chip polarization rotation testing device and method, which are used for testing whether a double exposure process introduces polarization rotation.
The embodiment of the invention provides an on-chip polarization rotation testing device, which comprises a first testing structure and a second testing structure, wherein:
the first test structure comprises a first transverse electric TE polarization grating, a second TE polarization grating and a first asymmetric waveguide positioned between the first TE polarization grating and the second TE polarization grating;
the second test structure comprises a third TE polarization grating, a transverse magnetic TM polarization grating and a second asymmetric waveguide positioned between the third TE polarization grating and the TM polarization grating; the first asymmetric waveguide and the second asymmetric waveguide are the same in length and are prepared by the same double exposure process.
The embodiment of the invention also provides an on-chip polarization rotation testing method, which uses the on-chip polarization rotation testing device and comprises the following steps:
inputting incident light with variable wavelength to the first test structure and the second test structure respectively;
acquiring a TE-TE transmission spectral line output by the first test structure, and acquiring a TE-TM transmission spectral line output by the second test structure;
and determining whether the polarization conversion meets the preset requirement or not according to the TE-TE transmission spectral line and the TE-TM transmission spectral line.
The embodiment of the invention also provides an on-chip polarization rotation testing device, which comprises a plurality of testing structures, wherein:
the test structure comprises two TE polarization gratings and an asymmetric waveguide, wherein the asymmetric waveguide is positioned between the two TE polarization gratings;
the asymmetric waveguides in each test structure are different in length and are prepared by the same double exposure process.
The embodiment of the invention also provides an on-chip polarization rotation testing method, which uses the on-chip polarization rotation testing device and comprises the following steps:
inputting incident light with the same wavelength to the plurality of test structures respectively;
respectively acquiring TE-TE transmissivity output by the plurality of test structures;
and determining whether the polarization conversion meets the preset requirement or not according to the obtained TE-TE transmissivity.
The on-chip polarization rotation testing device comprises a first testing structure and a second testing structure, wherein: the first test structure comprises a first TE polarization grating, a second TE polarization grating and a first asymmetric waveguide positioned between the first TE polarization grating and the second TE polarization grating; the second test structure comprises a third TE polarization grating, a TM polarization grating and a second asymmetric waveguide positioned between the third TE polarization grating and the TM polarization grating; the first asymmetric waveguide and the second asymmetric waveguide are the same in length and are prepared by the same double exposure process. By the embodiment of the invention, whether the double exposure process introduces polarization rotation can be judged at the initial stage of the flow sheet, the design is simple, and the test efficiency is high.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the example serve to explain the principles of the invention and not to limit the invention.
In fig. 1, a is a cross section of an asymmetric waveguide, and the two side walls have different inclination angles; b and c are the TE0 and TM0 mode field distributions of the waveguide, respectively; d is the correlation between the insertion loss and the wavelength of the corresponding TE-TE and TE-TM when the fixed waveguide length is 200 μm; e is the relationship between the insertion loss of TE-TE and TE-TM and the waveguide length when the fixed optical wavelength is 1550 nm.
FIG. 2 is a schematic diagram of an on-chip polarization rotation testing apparatus according to a first embodiment of the present invention;
FIG. 3 is a flowchart of an on-chip polarization rotation testing method according to a first embodiment of the present invention;
FIG. 4 shows simulation results of the first embodiment of the present invention;
FIG. 5 is a schematic diagram illustrating an on-chip polarization rotation testing apparatus according to a second embodiment of the present invention;
FIG. 6 is a flowchart of an on-chip polarization rotation testing method according to a second embodiment of the present invention.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It should be noted that the embodiments and features of the embodiments in the present application may be arbitrarily combined with each other without conflict.
The steps illustrated in the flow charts of the figures may be performed in a computer system such as a set of computer-executable instructions. Also, while a logical order is shown in the flow diagrams, in some cases, the steps shown or described may be performed in an order different than here.
In a waveguide with different inclination angles on two sides and close width and height, polarization conversion can occur between TE and TM polarization modes, and the efficiency of the polarization conversion is related to the wavelength of light waves and the length of the waveguide. In fig. 1, a is a cross section of an asymmetric waveguide, and the two side walls have different inclination angles; b and c are the TE0 and TM0 mode field distributions of the waveguide, respectively; d is the correlation between the insertion loss and the wavelength of the corresponding TE-TE and TE-TM when the fixed waveguide length is 200 μm; e is the relationship between the insertion loss of TE-TE and TE-TM and the waveguide length when the fixed optical wavelength is 1550 nm. The amplitude of the TE-TE oscillation is affected by the coupling coefficient between TE0 and TM0, the Free Spectrum Range (FSR) oscillation is affected by the difference between the group refractive indices of the waveguide length L, TE0 and the TM0 mode, and both the coupling coefficient and the group refractive index are affected by the waveguide cross section. The invention judges whether mode conversion occurs according to the oscillation amplitude of TE-TE and the crosstalk between TE-TE and TE-TM. If the mode analysis is performed on a large number of waveguide sections with different inclination angles, the approximate shape of the waveguide section can be obtained according to the oscillation amplitude and the FSR. The shape of the waveguide section is mainly affected by the position and the inclination angle of the secondary etching. If the two parameters are scanned, the corresponding oscillation amplitude and FSR can be obtained, and the position and the inclination angle of the secondary etching can be determined according to the oscillation amplitude and the FSR, so that the approximate shape of the waveguide section can be judged.
The following examples are given.
Example one
As shown in fig. 1, an on-chip polarization rotation testing apparatus according to a first embodiment of the present invention includes a first testing structure and a second testing structure, wherein:
the first test structure comprises a first TE polarization grating 21, a second TE polarization grating 25 and a first asymmetric waveguide 23 positioned between the first TE polarization grating 21 and the second TE polarization grating 25;
the second test structure comprises a third TE polarization grating 26, a TM polarization grating 210, and a second asymmetric waveguide 28 located between the third TE polarization grating 26, the TM polarization grating 210; the first asymmetric waveguide 23 and the second asymmetric waveguide 26 have the same length and are manufactured by the same double exposure process.
The input end and the output end of the first test structure are both TE polarization gratings (the first TE polarization grating 21 and the second TE polarization grating 25), the input end of the second test structure is the third TE polarization grating 26, and the output end is the TM polarization grating 210. The first asymmetric waveguide 23 and the second asymmetric waveguide 28 are polarization-converting body portions having the same length and a width close to a height, wherein one side of the dotted line is prepared by a double exposure process.
In one embodiment, the first test structure further comprises a first tapered waveguide 22 and a second tapered waveguide 24, wherein,
one end of the first tapered waveguide 22 is connected to the output end of the first TE polarization grating 21, and the other end of the first tapered waveguide 22 is connected to the first asymmetric waveguide 23;
one end of the second tapered waveguide 24 is connected to the first asymmetric waveguide 23, and the other end of the second tapered waveguide 24 is connected to a second TE polarization grating 25.
In one embodiment, the second test structure further comprises a third tapered waveguide 27 and a fourth tapered waveguide 29, wherein,
one end of the third tapered waveguide 27 is connected to the output end of the third TE polarization grating 26, and the other end of the third tapered waveguide 27 is connected to the second asymmetric waveguide 28;
one end of the fourth tapered waveguide 29 is connected to the second asymmetric waveguide 28, and the other end of the fourth tapered waveguide 29 is connected to the TM polarization grating 210.
Wherein the width of the first tapered waveguide 22 and the third tapered waveguide 27 is varied from W1 to W2, which tapers the waveguide width from a normal width to a width close to the waveguide height. The widths of the second tapered waveguide 24 and the fourth tapered waveguide 29 are varied from W2 to W1, which tapers the waveguide width from a width close to the waveguide height to a normal width. The normal width, i.e., the common width, is, for example, 220nm silicon light, the 1550nm band is usually 500nm wide, the 1310nm band is usually 420nm wide, and so on.
As shown in fig. 3, the on-chip polarization rotation testing method according to the first embodiment of the present invention includes the following steps:
and step 303, determining whether the polarization conversion meets a preset requirement according to the TE-TE transmission spectral line and the TE-TM transmission spectral line.
After the incident light is coupled in by the first TE polarization grating 21, the TE0 mode is excited in the waveguide, the TE0 mode is transmitted to the first asymmetric waveguide 23 through the first tapered waveguide 22, if there is mode conversion in the first asymmetric waveguide 23, the mode of TE0 polarization is converted to the TM0 mode in the first asymmetric waveguide 23, and the mode-converted light is output from the second TE polarization grating 25 after passing through the second tapered waveguide 24.
After the incident light is coupled in by the third TE polarization grating 26, the TE0 mode is excited in the waveguide, the TE0 mode is transmitted to the second asymmetric waveguide 28 through the third tapered waveguide 27, if there is mode conversion in the second asymmetric waveguide 28, the mode of TE0 polarization is converted to the TM0 mode in the second asymmetric waveguide 28, and the mode-converted light is output from the TM polarization grating 210 after passing through the fourth tapered waveguide 29.
The second TE polarization grating 25 filters TM polarized light, and the TM polarization grating 210 filters TE polarized light, so that the first test structure and the second test structure can obtain TE-TE and TE-TM transmission lines, respectively, and the polarization conversion can be analyzed according to the condition of the lines.
In one embodiment, the wavelength range (tuning range) of the incident light is 1525 nm to 1575nm, and the wavelength resolution is less than 0.1 nm.
In one embodiment, the TE-TE insertion loss oscillation amplitude is determined according to the TE-TE transmission spectral line, and the crosstalk between TE-TE and TE-TM is determined according to the TE-TE transmission spectral line and the TE-TM transmission spectral line;
and when the TE-TE insertion loss oscillation amplitude is smaller than a preset oscillation amplitude threshold value and the crosstalk is smaller than a preset crosstalk threshold value, determining that the polarization conversion meets the preset requirement.
The formula of crosstalk is as follows:
wherein λ is the wavelength, PTE(λ) is the output power of the first test structure, PTM(λ) is the output power of the second test structure.
In one embodiment, the oscillation amplitude threshold is 0.5dB, and the crosstalk threshold is-10 dB.
Fig. 4 shows simulation effects of the first embodiment of the present invention. According to simulation, the smaller the difference of the inclination angles of the two sides is, the lower the TE-TM conversion efficiency is; the FSR of the oscillations will vary from one tilt angle to another. In general, when the TE-TE oscillation amplitude is less than 0.5dB and the crosstalk between TE-TE and TE-TM is greater than 10dB, the polarization rotation can be ignored.
By the embodiment of the invention, whether the double exposure process introduces polarization rotation can be judged at the initial stage of the flow sheet, the design is simple, and the test efficiency is high.
Example two
As shown in fig. 5, the on-chip polarization rotation testing apparatus according to the second embodiment of the present invention includes a plurality of testing structures, wherein:
the test structure comprises two TE polarization gratings 41 and an asymmetric waveguide 43, the asymmetric waveguide 43 being located between the two TE polarization gratings 41;
the asymmetric waveguides 43 in each test structure are of different lengths and are fabricated using the same double exposure process.
The present embodiment is based on the dependence of the polarization conversion on the length. The test structure comprises a series of asymmetric waveguides 43 of different lengths. The input and output gratings of these test structures are TE gratings, the difference being only the length of the polarization rotating bulk asymmetric waveguide 43. The test structure of the embodiment of the invention comprises at least two, preferably more than five.
In one embodiment, each test structure comprises two tapered waveguides 42, and the asymmetric waveguide 43 is connected to two TE polarization gratings 41 through the tapered waveguides 42.
In one embodiment, the range of lengths of the asymmetric waveguides 43 in the plurality of test structures covers a length variation period.
The period of change of the asymmetric waveguide length L is related to the cross section, L, wavelength, and the like. For a single wavelength, the conversion efficiency between TE and TM varies with the length of the core structure. As long as the TE-TE or TE-TM insertion loss is observed to have a complete period change within the length change range, namely, the transmittance-length change period is calculated to be covered.
As shown in fig. 6, an on-chip polarization rotation testing method according to an embodiment of the present invention includes:
Incident light enters through one TE polarization grating 41, excites a purer TE0 mode in the waveguide, and then is transmitted to the asymmetric waveguide 43 through the tapered waveguide 42, if mode conversion exists in the waveguide, the TE0 mode in the asymmetric waveguide 43 is converted to a TM0 mode, and the mode-converted light is output by the other TE polarization grating 41. For light of a certain frequency, the conversion efficiency is different for different waveguide lengths, and the conversion efficiency shows periodic variation.
In an embodiment, the determining whether polarization conversion meets a preset requirement according to the obtained TE-TE transmittance includes:
determining TE-TE insertion loss oscillation amplitude according to the TE-TE transmissivity;
and when the TE-TE insertion loss oscillation amplitude is smaller than a preset oscillation amplitude threshold value, determining that the polarization conversion meets the preset requirement.
The test structure length variation range of the second embodiment covers the FSR variation period of the length, and the mode conversion efficiency of the asymmetric waveguide is determined by comparing the oscillation amplitude ranges of TE-TE insertion loss of the test structure with a single wavelength and different lengths.
In one embodiment, the oscillation amplitude threshold is 0.5 dB.
By the embodiment of the invention, whether the double exposure process introduces polarization rotation can be judged at the initial stage of the flow sheet, the design is simple, and the test efficiency is high.
It will be understood by those of ordinary skill in the art that all or some of the steps of the methods, systems, functional modules/units in the devices disclosed above may be implemented as software, firmware, hardware, and suitable combinations thereof. In a hardware implementation, the division between functional modules/units mentioned in the above description does not necessarily correspond to the division of physical components; for example, one physical component may have multiple functions, or one function or step may be performed by several physical components in cooperation. Some or all of the components may be implemented as software executed by a processor, such as a digital signal processor or microprocessor, or as hardware, or as an integrated circuit, such as an application specific integrated circuit. Such software may be distributed on computer readable media, which may include computer storage media (or non-transitory media) and communication media (or transitory media). The term computer storage media includes volatile and nonvolatile, removable and non-removable media implemented in any method or technology for storage of information such as computer readable instructions, data structures, program modules or other data, as is well known to those of ordinary skill in the art. Computer storage media includes, but is not limited to, RAM, ROM, EEPROM, flash memory or other memory technology, CD-ROM, Digital Versatile Disks (DVD) or other optical disk storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other medium which can be used to store the desired information and which can accessed by a computer. In addition, communication media typically embodies computer readable instructions, data structures, program modules or other data in a modulated data signal such as a carrier wave or other transport mechanism and includes any information delivery media as known to those skilled in the art.
Claims (13)
1. An on-chip polarization rotation testing apparatus, comprising a first testing structure and a second testing structure, wherein:
the first test structure comprises a first transverse electric TE polarization grating, a second TE polarization grating and a first asymmetric waveguide positioned between the first TE polarization grating and the second TE polarization grating;
the second test structure comprises a third TE polarization grating, a transverse magnetic TM polarization grating and a second asymmetric waveguide positioned between the third TE polarization grating and the TM polarization grating; the first asymmetric waveguide and the second asymmetric waveguide are the same in length and are prepared by the same double exposure process.
2. The on-chip polarization rotation testing apparatus of claim 1, wherein the first test structure further comprises a first tapered waveguide and a second tapered waveguide, wherein,
one end of the first gradually-changing waveguide is connected with the output end of the first TE polarization grating, and the other end of the first gradually-changing waveguide is connected with the first asymmetric waveguide;
one end of the second gradual change waveguide is connected with the first asymmetric waveguide, and the other end of the second gradual change waveguide is connected with the second TE polarization grating.
3. The on-chip polarization rotation testing apparatus of claim 1, wherein the second test structure further comprises a third tapered waveguide and a fourth tapered waveguide, wherein,
one end of the third gradual change waveguide is connected with the output end of the third TE polarization grating, and the other end of the third gradual change waveguide is connected with the second asymmetric waveguide;
one end of the fourth gradual change waveguide is connected with the second asymmetric waveguide, and the other end of the fourth gradual change waveguide is connected with the TM polarization grating.
4. An on-chip polarization rotation test method using the on-chip polarization rotation test apparatus according to any one of claims 1 to 3, comprising:
inputting incident light with variable wavelength to the first test structure and the second test structure respectively;
acquiring a TE-TE transmission spectral line output by the first test structure, and acquiring a TE-TM transmission spectral line output by the second test structure;
and determining whether the polarization conversion meets the preset requirement or not according to the TE-TE transmission spectral line and the TE-TM transmission spectral line.
5. The method of claim 4, wherein the incident light has a wavelength ranging from 1525 nm to 1575nm and a wavelength resolution of less than 0.1 nm.
6. The method of claim 4, wherein determining whether polarization conversion meets a predetermined requirement based on the TE-TE transmission line and the TE-TM transmission line comprises:
determining TE-TE insertion loss oscillation amplitude according to the TE-TE transmission spectral line, and determining crosstalk between TE-TE and TE-TM according to the TE-TE transmission spectral line and the TE-TM transmission spectral line;
and when the TE-TE insertion loss oscillation amplitude is smaller than a preset oscillation amplitude threshold value and the crosstalk is smaller than a preset crosstalk threshold value, determining that the polarization conversion meets the preset requirement.
7. The method of claim 6,
the oscillation amplitude threshold is 0.5dB, and the crosstalk threshold is-10 dB.
8. An on-chip polarization rotation testing apparatus, comprising a plurality of test structures, wherein:
the test structure comprises two TE polarization gratings and an asymmetric waveguide, wherein the asymmetric waveguide is positioned between the two TE polarization gratings;
the asymmetric waveguides in each test structure are different in length and are prepared by the same double exposure process.
9. The on-chip polarization rotation testing apparatus of claim 8, wherein each testing structure comprises two tapered waveguides, and the asymmetric waveguide is respectively connected to two TE polarization gratings through the tapered waveguides.
10. The on-chip polarization rotation testing apparatus of claim 8,
the length range of the asymmetric waveguides in the plurality of test structures covers a length variation period.
11. An on-chip polarization rotation test method using the on-chip polarization rotation test apparatus according to any one of claims 8 to 10, comprising:
inputting incident light with the same wavelength to the plurality of test structures respectively;
respectively acquiring TE-TE transmissivity output by the plurality of test structures;
and determining whether the polarization conversion meets the preset requirement or not according to the obtained TE-TE transmissivity.
12. The method of claim 11, wherein determining whether polarization conversion meets a predetermined requirement based on the obtained TE-TE transmission line comprises:
determining TE-TE insertion loss oscillation amplitude according to the TE-TE transmissivity;
and when the TE-TE insertion loss oscillation amplitude is smaller than a preset oscillation amplitude threshold value, determining that the polarization conversion meets the preset requirement.
13. The method of claim 12,
the oscillation amplitude threshold is 0.5 dB.
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