CN1113611A - Composite electric heating film - Google Patents

Composite electric heating film Download PDF

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Publication number
CN1113611A
CN1113611A CN 95102338 CN95102338A CN1113611A CN 1113611 A CN1113611 A CN 1113611A CN 95102338 CN95102338 CN 95102338 CN 95102338 A CN95102338 A CN 95102338A CN 1113611 A CN1113611 A CN 1113611A
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China
Prior art keywords
rete
electric heating
heating film
film
porous
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Granted
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CN 95102338
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Chinese (zh)
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CN1035143C (en
Inventor
姚熹
张良莹
任巍
刘芸
吴小清
刘卫国
康青
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Xian Jiaotong University
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Xian Jiaotong University
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Priority to CN95102338A priority Critical patent/CN1035143C/en
Publication of CN1113611A publication Critical patent/CN1113611A/en
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Publication of CN1035143C publication Critical patent/CN1035143C/en
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Abstract

The composite heat-releasing electric film used for making infrared detector is composed of substrate, heat-releasing electric film and electrode layers over and under the heat-releasing film and features that a porous insulating film with low thermal conductivity is added between the heat-releasing film and substrate and a compact transition film is added between the heat-releasing film and insulating film, which could reduce thermal loss from the substrate and improve infrared detector performance.

Description

Composite electric heating film
The invention belongs to technical field of electronic devices, further relate to a kind of composite electric heating film that is used to prepare pyroelectric infrared detector.
At present, widely used pyroelectric infrared detector is nearly all made with monocrystalline or ceramic body material.The body material will be thinned to tens micron thickness by mechanical lapping usually, machining difficulty, and cost height.The response speed of this detector is slow simultaneously, especially is difficult to integrated.The effective way that overcomes above shortcoming is with the body material filmization.Generally between 0.1 micron to several microns, the mechanical strength of self is relatively poor for the thickness of electric heating film, need be attached in the substrate as backing material, as on monocrystalline silicon piece, magnesium oxide or aluminium oxide.The thermal conductivity of these base materials is generally bigger, causes temperature rise that infrared radiation produces on electric heating film owing to hot-fluid reduces from based the scattering and disappearing rapidly of electric heating film, makes the sensitivity of thin film detector descend greatly, to such an extent as to can't practicability.Takayama R.[J.Appl.Phys., Vol.61, etc. p.411(1987)] people adopts etch to remove to be positioned at the method for substrate below the electric heating film probe portion, solving hot-fluid scatters and disappears seriously from electric heating film is based, to improve the pyroelectric response of film, but shortcoming is the bad mechanical strength of device, and is unfavorable for the integrated of device.
The present invention proposes a kind of electric heating film of composite construction.By the porous rete of lower thermal conductivity in the composite construction, effectively reduce hot-fluid and scatter and disappear from electric heating film is based, thus the performance of raising thin film infrared detector, its mechanical strength height, and very be suitable for preparing integrated thermal imaging detector array.
The present invention includes substrate, pyroelectricity rete and pyroelectricity rete upper and lower surface the electrode rete of one deck is respectively arranged.The present invention has the porous rete of one deck lower thermal conductivity between pyroelectricity rete and substrate, the transition rete of one deck even compact is arranged between pyroelectricity rete and the porous rete.
The invention will be further described below in conjunction with accompanying drawing.
Fig. 1 is a structural representation of the present invention.
The structure of composite electric heating film and the effect of each functional film layer are: the adiabatic rete of porous that adds one deck lower thermal conductivity between electric heating film and substrate, to effectively reduce hot-fluid from the transmission of electric heating film to matrix, its thickness is between 0.1 micron to 10 microns; Be the influence of the porosity characteristic that solves the porous rete, improve the adhesive force of pyroelectricity rete, between pyroelectricity rete and porous rete, increased the transition rete of one deck even compact the quality of pyroelectricity rete.As drawing of the signal of telecommunication, the electric heating film upper and lower surface all respectively has a layer electrode membrane layer, and like this, substrate, porous rete, transition rete, bottom electrode rete, electric heating film and top electrode rete have been formed composite electric heating film.
The forming process of composite electric heating film is as follows: at first choose matrix (1), it can select surface finish monocrystalline or polycrystalline material such as monocrystalline silicon piece, sapphire or magnesium oxide etc. for use, preparation porous adiabatic membrane (2) behind the cleaning-drying.According to the characteristics of composite electric heating film, require porous adiabatic membrane (2) that low thermal conductivity and certain thickness should be arranged, the surface is even again, in order to subsequent technique.Lower thermal conductivity requires can be by realizing the size of film mesopore and the control of porosity; Small and the uniform hole and the high porosity help reducing thermal conductivity.The material of porous rete can be selected silicon dioxide for use, little, the good stability of its thermal conductivity, and with the semiconductor technology compatibility.The porous silica films test result who adopts solution-gel (Sol-Gel) method to prepare is shown: the thermal conductivity of the porous silica film that porosity is 24%, thickness is 320 nanometers is less than 0.02W/mK.Because the porosity characteristic on porous adiabatic membrane surface can't directly be deposited on bottom electrode (4) and electric heating film (5) above it, solve by the transition film (3) that adds one deck densification in the present invention.Material also can be selected silicon dioxide for use, and available aumospheric pressure cvd (CVD) method or electron beam evaporation method are gone up deposition one layer thickness in surperficial even, the fine and close silicon dioxide transition film (3) below 1 micron in porous thermal insulation (2).Bottom electrode (4) material can be deposited on transition film (3) by methods such as evaporation or sputters with them and go up formation bottom electrode (4) with precious metal materials such as platinum or gold.Before deposition platinum or gold electrode, thin titanium film bottoming that can first sputter one deck is to improve electrode adhesion.Pyroelectricity rete (5) can adopt conventional electric heating film.Adopt the typical electrical performance parameter of mixing lanthanum lead titanates (PLT) film (5) of 0.6 micron thickness of sol-gel process (Sol-Gel) preparation to be: dielectric constant is 350, and loss angle tangent is less than 1%(1KHz), dc resistivity is greater than 1 * 10 12Ω cm, pyroelectric coefficient is greater than 3 * 10 -8C/cm 2K.Adopt methods such as evaporation or sputter to prepare the top electrode (6) of aluminium, gold, platinum or other material then.Obtained composite electric heating film like this.
Employing with the exhausted film of porous be the composite electric heating film of thermal insulation characteristics effectively reduced hot-fluid from electric heating film to the scattering and disappearing of matrix, improved the pyroelectric response of Infrared Detectors; Owing to all adopt planar technique and semiconductor technology compatible fully, very be suitable for preparing integrated thermal imaging detector array.

Claims (5)

1, composite electric heating film, it comprises the layer electrode membrane layer that substrate, pyroelectricity rete and pyroelectricity rete upper and lower surface all respectively have, it is characterized in that: one deck porous rete is arranged between described pyroelectricity rete and substrate, the transition rete of one deck densification is arranged between pyroelectricity rete and the porous rete.
2, composite electric heating film as claimed in claim 1 is characterized in that: described porous rete is the porous membrane of lower thermal conductivity high porosity, and its thickness is between 0.1~10 μ m, and hole diameter is small and be evenly distributed, and thermal conductivity is less than 0.02W/mK.
3, composite electric heating film as claimed in claim 1 is characterized in that: described transition rete is a dense film, and its thickness is less than 1 μ m.
4, composite electric heating film as claimed in claim 1 is characterized in that: described substrate is the electric heating film backing material.
5, composite electric heating film as claimed in claim 1 is characterized in that: described electrode rete is the electric heating film electrode.
CN95102338A 1995-03-27 1995-03-27 Composite electric heating film Expired - Fee Related CN1035143C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN95102338A CN1035143C (en) 1995-03-27 1995-03-27 Composite electric heating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN95102338A CN1035143C (en) 1995-03-27 1995-03-27 Composite electric heating film

Publications (2)

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CN1113611A true CN1113611A (en) 1995-12-20
CN1035143C CN1035143C (en) 1997-06-11

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CN95102338A Expired - Fee Related CN1035143C (en) 1995-03-27 1995-03-27 Composite electric heating film

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102721658A (en) * 2012-07-05 2012-10-10 昆明斯派特光谱科技有限责任公司 Method for manufacturing pyroelectric spectrum detector
CN102830086A (en) * 2012-08-31 2012-12-19 中北大学 Infrared detector sensing element based on black silicon absorption layer and multilayer combination membrane structure
CN103346250A (en) * 2013-07-05 2013-10-09 中国科学院苏州纳米技术与纳米仿生研究所 Pyroelectric thin film infrared focal plane detector chip and manufacturing method thereof
CN114005875A (en) * 2021-11-01 2022-02-01 南京大学 Method for regulating and controlling metal/insulator interface thermal conductance

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5471060A (en) * 1993-08-23 1995-11-28 Matsushita Electric Industrial Co., Ltd. Pyroelectric infrared radiation detector and method of producing the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102721658A (en) * 2012-07-05 2012-10-10 昆明斯派特光谱科技有限责任公司 Method for manufacturing pyroelectric spectrum detector
CN102830086A (en) * 2012-08-31 2012-12-19 中北大学 Infrared detector sensing element based on black silicon absorption layer and multilayer combination membrane structure
CN103346250A (en) * 2013-07-05 2013-10-09 中国科学院苏州纳米技术与纳米仿生研究所 Pyroelectric thin film infrared focal plane detector chip and manufacturing method thereof
CN103346250B (en) * 2013-07-05 2015-09-09 中国科学院苏州纳米技术与纳米仿生研究所 Electric heating film infrared focal plane detector chip and preparation method thereof
CN114005875A (en) * 2021-11-01 2022-02-01 南京大学 Method for regulating and controlling metal/insulator interface thermal conductance

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