CN111355467A - Silicon back etching type single crystal film bulk acoustic wave resonator optimized by radio frequency capacitance - Google Patents
Silicon back etching type single crystal film bulk acoustic wave resonator optimized by radio frequency capacitance Download PDFInfo
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- CN111355467A CN111355467A CN202010251043.2A CN202010251043A CN111355467A CN 111355467 A CN111355467 A CN 111355467A CN 202010251043 A CN202010251043 A CN 202010251043A CN 111355467 A CN111355467 A CN 111355467A
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- 239000013078 crystal Substances 0.000 title claims abstract description 79
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 47
- 239000010703 silicon Substances 0.000 title claims abstract description 47
- 238000005530 etching Methods 0.000 title claims abstract description 16
- 239000003990 capacitor Substances 0.000 claims abstract description 78
- 230000008878 coupling Effects 0.000 claims abstract description 54
- 238000010168 coupling process Methods 0.000 claims abstract description 54
- 238000005859 coupling reaction Methods 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000010408 film Substances 0.000 claims description 58
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 42
- 235000012239 silicon dioxide Nutrition 0.000 claims description 21
- 239000000377 silicon dioxide Substances 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 11
- 238000002360 preparation method Methods 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 238000005240 physical vapour deposition Methods 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 238000001883 metal evaporation Methods 0.000 claims description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims 1
- 238000004549 pulsed laser deposition Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
Abstract
The invention discloses a silicon back etching type single crystal film bulk acoustic resonator optimized by utilizing radio frequency capacitance, which structurally comprises: the single crystal film bulk acoustic resonator comprises a first silicon substrate, a series single crystal film bulk acoustic resonator, a first electrode layer, a parallel single crystal film bulk acoustic resonator, a second electrode layer and a first radio frequency coupling capacitor, wherein the series single crystal film bulk acoustic resonator is connected with the parallel single crystal film bulk acoustic resonator through the first electrode layer, and the parallel single crystal film bulk acoustic resonator is connected with the first radio frequency coupling capacitor through the second electrode layer. The out-of-band rejection characteristic of the bulk acoustic wave filter can be obviously enhanced by adopting the first radio frequency coupling capacitor, and meanwhile, the first radio frequency coupling capacitor is connected with the parallel single crystal film bulk acoustic resonator, so that the performance loss introduced by an external circuit can be effectively reduced.
Description
Technical Field
The invention relates to the technical field of resonators, in particular to a silicon back etching type single crystal film bulk acoustic resonator optimized by utilizing radio frequency capacitance.
Background
In recent years, with the upgrading of mobile communication service forms and the improvement of transmission information quantity, a great deal of requirements on performance filters working in a high frequency band (more than 2.5 GHz) range, such as small size, low loss, high quality factor, high out-of-band rejection and the like, are brought.
The cavity type FBAR which is prepared by adopting a single crystal AlN film and is mainstream at present has the following defects: (1) a plurality of FBAR resonators are connected in series and in parallel to form a topological structure, but the mode has the problems of large insertion loss, poor out-of-band rejection and the like when a high-order filter and a high-frequency filter are formed; (2) the FBAR with the topological structure is difficult to prepare, the preparation process is complex, and the preparation cost is high.
Disclosure of Invention
The invention aims to provide a silicon back etching type single crystal film bulk acoustic resonator optimized by utilizing radio frequency capacitance, and solves the problems of high preparation difficulty, poor out-of-band rejection and high insertion loss of the conventional single crystal film bulk acoustic resonator.
The invention is realized by the following technical scheme:
a silicon back etching type single crystal film bulk acoustic resonator optimized by radio frequency capacitance comprises a first silicon substrate, a series single crystal film bulk acoustic resonator, a first electrode layer, a parallel single crystal film bulk acoustic resonator, a second electrode layer and a first radio frequency coupling capacitor, wherein the series single crystal film bulk acoustic resonator, the first electrode layer, the parallel single crystal film bulk acoustic resonator, the second electrode layer and the first radio frequency coupling capacitor are arranged on the first silicon substrate, the series single crystal film bulk acoustic resonator is connected with the parallel single crystal film bulk acoustic resonator through the first electrode layer, the parallel single crystal film bulk acoustic resonator is connected with the first radio frequency coupling capacitor through the second electrode layer, the series single crystal film bulk acoustic resonator comprises a first series resonator and a second series resonator, the parallel single crystal film bulk acoustic resonator comprises a first parallel resonator and a second parallel resonator, and the first radio frequency coupling capacitor comprises a first compensation capacitor and a second compensation capacitor.
As a further alternative of the silicon back-etched single crystal thin film bulk acoustic resonator optimized by using the radio frequency capacitance, the second series resonator, the first parallel resonator and the second parallel resonator are respectively identical in composition and structure to the first series resonator.
As a further alternative to the silicon back etched type single crystal thin film bulk acoustic resonator optimized with rf capacitance, the first series resonator comprises a second silicon substrate, a resonator bottom electrode, a single crystal piezoelectric film, a resonator top electrode, a second radio frequency coupling capacitor lower electrode, a silicon dioxide dielectric layer, a second radio frequency coupling capacitor upper electrode and a metal connecting piece, the second silicon substrate is provided with a first through hole and a second through hole, the bottom of the single crystal piezoelectric film is provided with a first groove and a second groove which are matched with the bottom electrode of the resonator, the silicon dioxide dielectric layer is provided with a third groove and a fourth groove which are matched with the top electrode of the resonator, a fifth groove which is matched with the lower electrode of the second radio frequency coupling capacitor and a third through hole, and the top electrode of the resonator and the upper electrode of the second radio frequency coupling capacitor are connected together through the third through hole by a metal connecting piece.
As a further alternative of the silicon back-etched single crystal thin film bulk acoustic resonator optimized by using the radio frequency capacitor, a top electrode of the first parallel resonator is connected to bottom electrodes of the first series resonator and the second series resonator, respectively, a top electrode of the second parallel resonator is connected to a bottom electrode of the second series resonator, an upper electrode of the first compensation capacitor is connected to a bottom electrode of the first parallel resonator, and an upper electrode of the second compensation capacitor is connected to a bottom electrode of the second parallel resonator.
As a further alternative of the silicon back-etched type single crystal thin film bulk acoustic resonator optimized by using the radio frequency capacitor, the thickness of the silicon dioxide dielectric layer is 100 nm-3.5 μm, the thickness of the upper electrode of the second radio frequency coupling capacitor is 50 nm-2 μm, and the thickness of the lower electrode of the second radio frequency coupling capacitor is 50 nm-1 um; the thickness of the single crystal piezoelectric film is 500 nm-4 um.
As a further alternative of the silicon back etching type single crystal film bulk acoustic resonator optimized by utilizing the radio frequency capacitor, the thickness of the second silicon substrate is 575um, the thickness of the top electrode of the resonator is 30 nm-1 um, and the thickness of the bottom electrode of the resonator is 30 nm-1 um.
A method of manufacturing a first series resonator, the method comprising the steps of:
step S1, growing a resonator bottom electrode on a second silicon substrate;
step S2, patterning bottom electrode metal on the substrate of step S1, and depositing a single crystal piezoelectric film;
step S3, sputtering or evaporating a resonator top electrode and a second radio frequency coupling capacitor lower electrode on the single crystal piezoelectric film;
step S4, the top electrode is patterned on the basis of the step S3, and a silicon dioxide dielectric layer is deposited;
step S5, etching the back of the substrate to form a first through hole and a second through hole;
step S6, preparing a second radio frequency coupling capacitor upper electrode and a third through hole on the SiO2 dielectric layer;
and step S7, electrically connecting the top electrode of the resonator with the upper electrode of the second radio frequency coupling capacitor by metal evaporation to finish the preparation.
As a further alternative of the preparation method of the first series resonator, the method for depositing the single-crystal piezoelectric film comprises one or more of PVD, MOCVD, PLD and ALD, the method for growing the resonator bottom electrode is magnetron sputtering, and the method for depositing the silicon dioxide dielectric layer is PECVD.
As a further alternative of the preparation method of the first series resonator, the second rf coupling capacitor upper electrode is any one of Mo, Pt, Ti and Au, and the second rf coupling capacitor lower electrode is any one of Mo, Pt, Ti and Au.
The invention has the beneficial effects that:
the invention can obviously enhance the out-of-band rejection characteristic of the bulk acoustic wave filter by adopting the first radio frequency coupling capacitor, and meanwhile, the first radio frequency coupling capacitor is connected with the parallel single crystal film bulk acoustic resonator, so that a compensation capacitor circuit is integrated in the traditional silicon back etching FBAR bulk acoustic resonator, the performance loss introduced by an external circuit can be effectively reduced, and the problems of poor out-of-band rejection and large insertion loss of the traditional single crystal film bulk acoustic resonator are solved.
Drawings
FIG. 1 is a schematic diagram showing the composition of a silicon back-etched single crystal film bulk acoustic resonator optimized by RF capacitors according to the present invention;
FIG. 2 is a schematic diagram showing a first series resonator in a silicon back-etched single crystal film bulk acoustic resonator optimized by RF capacitance according to the present invention;
fig. 3 is a schematic composition diagram of a second silicon substrate in a first series resonator of the present invention;
fig. 4 is a schematic composition diagram of a single crystal piezoelectric film in a first series resonator of the present invention;
fig. 5 is a schematic composition diagram of a silicon dioxide dielectric layer in a first series resonator according to the present invention;
fig. 6 is a schematic diagram of the composition of the metal connection in the first series resonator of the present invention;
fig. 7 is a flowchart of a method for manufacturing a first series resonator according to the present invention.
Description of reference numerals: 1. a first silicon substrate; 2. a first electrode layer; 3. a second electrode layer; 4. a first series resonator; 5. a second series resonator; 6. a first parallel resonator; 7. a second parallel resonator; 8. a first compensation capacitor; 9. a second compensation capacitor; 10. a second silicon substrate; 11. a resonator bottom electrode; 12. a single crystal piezoelectric film; 13. a resonator top electrode; 14. a second radio frequency coupling capacitor lower electrode; 15. a silicon dioxide dielectric layer; 16. a second RF coupling capacitor upper electrode; 17. a metal connecting member; 18. a first through hole; 19. a second through hole; 20. a first groove; 21. a second groove; 22. a third groove; 23. a fourth groove; 24. a fifth groove; 25. a third through hole; 26. a column connecting end; 27. the horizontal pole link.
Detailed Description
The invention will be described in detail with reference to the drawings and specific embodiments, which are illustrative of the invention and are not to be construed as limiting the invention.
As shown in fig. 1 to 6, a silicon back-etched type single crystal thin film bulk acoustic resonator optimized by using radio frequency capacitance comprises a first silicon substrate 1, a series single crystal thin film bulk acoustic resonator arranged on the first silicon substrate 1, a first electrode layer 2, a parallel single crystal thin film bulk acoustic resonator, a second electrode layer 3 and a first radio frequency coupling capacitor, the series single crystal film bulk acoustic resonator is connected with the parallel single crystal film bulk acoustic resonator through the first electrode layer 2, the parallel single crystal film bulk acoustic resonator is connected with the first radio frequency coupling capacitor through the second electrode layer 3, the series single crystal thin film bulk acoustic resonator includes a first series resonator 4 and a second series resonator 5, the parallel single crystal film bulk acoustic resonator comprises a first parallel resonator 6 and a second parallel resonator 7, and the first radio frequency coupling capacitor comprises a first compensation capacitor 8 and a second compensation capacitor 9.
Specifically, in this embodiment, the second series resonator 5, the first parallel resonator 6, and the second parallel resonator 7 have the same composition and structure as the first series resonator 4, respectively.
Specifically, in this embodiment, the first series resonator 4 includes a second silicon substrate 10, a resonator bottom electrode 11, a single-crystal piezoelectric film 12, a resonator top electrode 13, a second rf coupling capacitor bottom electrode 14, a silicon dioxide dielectric layer 15, a second rf coupling capacitor top electrode 16, and a metal connecting member 17, the second silicon substrate 10 is provided with a first through hole 18 and a second through hole 19, the bottom of the single crystal piezoelectric film 12 is provided with a first groove 20 and a second groove 21 which are matched with the bottom electrode 11 of the resonator, the silicon dioxide dielectric layer 15 is provided with a third groove 22 and a fourth groove 24 which are matched with the top electrode 13 of the resonator, a fifth groove 24 which is matched with the lower electrode 14 of the second radio frequency coupling capacitor and a third through hole 25, and the metal connecting piece 17 connects the top electrode 13 of the resonator and the upper electrode 16 of the second radio frequency coupling capacitor together through the third through hole 25;
it should be noted that the cross sections of the first through hole 18 and the second through hole 19 are trapezoidal, the first groove 20 is disposed at a position corresponding to the first through hole 18, the second groove 21 is disposed at a position corresponding to the second through hole 19, the third groove 22 is disposed at a position corresponding to the first groove 20, the fourth groove 23 is disposed at a position corresponding to the second groove 21, the fifth groove 24 is disposed between the third groove 22 and the fourth groove 23, and the second rf coupling capacitor upper electrode 16 is disposed at a position corresponding to the fifth groove 24; in addition, the metal connecting piece 17 comprises a column connecting end 26 and a transverse column connecting end 27, the column connecting end 26 is connected with the resonator top electrode 13 by inserting the third through hole 25, and the transverse column connecting end 27 is attached to the silicon dioxide dielectric layer 15 and is connected with the second radio frequency capacitor upper electrode 16.
Specifically, in this embodiment, the top electrode of the first parallel resonator 6 is connected to the bottom electrodes of the first and second series resonators 4 and 5, the top electrode of the second parallel resonator 7 is connected to the bottom electrode of the second series resonator 5, the upper electrode of the first compensation capacitor 8 is connected to the bottom electrode of the first parallel resonator 6, and the upper electrode of the second compensation capacitor 9 is connected to the bottom electrode of the second parallel resonator 7.
Specifically, in the embodiment, the thickness of the silicon dioxide dielectric layer 15 is 100nm to 3.5 μm, the thickness of the second rf coupling capacitor upper electrode 16 is 50nm to 2 μm, and the thickness of the second rf coupling capacitor lower electrode 14 is 50nm to 1 um; the thickness of the single crystal piezoelectric film 12 is 500 nm-4 um.
Specifically, in this embodiment, the thickness of the second silicon substrate 10 is 575um, the thickness of the top electrode 13 of the resonator is 30nm to 1um, and the thickness of the bottom electrode 11 of the resonator is 30nm to 1 um.
In the embodiment, the out-of-band rejection characteristic of the bulk acoustic wave filter can be obviously enhanced by adopting the first radio frequency coupling capacitor, and meanwhile, the first radio frequency coupling capacitor is connected with the parallel single crystal film bulk acoustic resonator, so that a compensation capacitor circuit is integrated in the traditional silicon back etching FBAR bulk acoustic resonator, the performance loss introduced by an external circuit can be effectively reduced, and the problems of poor out-of-band rejection and large insertion loss of the traditional single crystal film bulk acoustic resonator are solved.
The first series resonator 4, the second series resonator 5, the first parallel resonator 6, the second parallel resonator 7, the first compensation capacitor 8 and the second compensation capacitor 9 have specific area ratios according to frequency setting requirements; resonator top electrode 13, single crystal piezoelectric film 12 and resonator bottom electrode 11 constitute piezoelectricity jointly and vibrate sandwich structure, can further reduce the performance loss that external circuit introduced through constituting sandwich structure, simultaneously, through adopting single crystal piezoelectric film 12, can be more applicable to the 5G frequency channel better.
As shown in fig. 7, a method for manufacturing a first series resonator includes the steps of:
step S1 of growing the resonator bottom electrode 11 on the second silicon substrate 10;
step S2, patterning the bottom electrode metal 11 on the substrate of step S1, depositing the single crystal piezoelectric film 12;
step S3, sputtering or evaporating the resonator top electrode 13 and the second rf coupling capacitor bottom electrode 14 on the single crystal piezoelectric film 12;
step S4, the top electrode 13 is patterned on the basis of the step S3, and a silicon dioxide dielectric layer 15 is deposited;
step S5, etching the back surface of the second silicon substrate 10 to form a first via 18 and a second via 19;
step S6, preparing a second radio frequency coupling capacitor upper electrode 16 and a third through hole 25 on the SiO2 dielectric layer 15;
and step S7, electrically connecting the top electrode 13 of the resonator and the upper electrode 16 of the second radio frequency coupling capacitor through metal evaporation to finish the preparation.
Specifically, in the embodiment, the method for depositing the single-crystal piezoelectric film includes one or more combinations of PVD, MOCVD, PLD and ALD, the method for growing the resonator bottom electrode is magnetron sputtering, and the method for depositing the silicon dioxide dielectric layer is PECVD.
Specifically, in this embodiment, the upper electrode of the second rf coupling capacitor is made of any one of Mo, Pt, Ti, and Au, and the lower electrode of the second rf coupling capacitor is made of any one of Mo, Pt, Ti, and Au.
Example 1 of the method for preparing the first series resonator:
(1) selecting a high-resistance Si substrate as an epitaxial substrate, carrying out acid washing and organic cleaning on the epitaxial substrate to clean the surface of the substrate, and sputtering or evaporating a metal Mo electrode on the substrate, wherein the thickness of the electrode is 300 nm;
(2) photoetching the Mo metal electrode, patterning a substrate to obtain an irregular pentagonal bottom electrode, and sputtering a 2um single-crystal AlN piezoelectric film on the irregular pentagonal bottom electrode by utilizing a PLD (laser deposition) technology;
(3) continuously depositing a resonator metal top electrode on the monocrystal AlN piezoelectric film;
(4) carrying out deep silicon etching on the back surface of the resonator by utilizing ICP (inductively coupled plasma);
(5) preparing a metal Mo top electrode and a capacitor lower electrode of the FBAR resonator above the piezoelectric layer by sputtering and evaporation methods, wherein the electrode material is metal Mo, and the preparation method is PVD magnetron sputtering;
(6) and continuously preparing a dielectric layer above the top electrode of the resonator, wherein the thickness of the dielectric layer is 2 um. Preparing a metal Mo capacitor upper electrode by PVD magnetron sputtering;
(7) and etching the electrode connecting through hole by utilizing an ICP (inductively coupled plasma) etching technology, and performing electrical connection by evaporating metal.
The technical solutions provided by the embodiments of the present invention are described in detail above, and the principles and embodiments of the present invention are explained herein by using specific examples, and the descriptions of the embodiments are only used to help understanding the principles of the embodiments of the present invention; meanwhile, for a person skilled in the art, according to the embodiments of the present invention, there may be variations in the specific implementation manners and application ranges, and in summary, the content of the present description should not be construed as a limitation to the present invention.
Claims (9)
1. A silicon back etching type single crystal film bulk acoustic resonator optimized by utilizing radio frequency capacitance is characterized by comprising a first silicon substrate (1), a series single crystal film bulk acoustic resonator, a first electrode layer (2), a parallel single crystal film bulk acoustic resonator, a second electrode layer (3) and a first radio frequency coupling capacitor, wherein the series single crystal film bulk acoustic resonator is arranged on the first silicon substrate (1) and is connected with the parallel single crystal film bulk acoustic resonator through the first electrode layer (2), the parallel single crystal film bulk acoustic resonator is connected with the first radio frequency coupling capacitor through the second electrode layer (3), the series single crystal film bulk acoustic resonator comprises a first series resonator (4) and a second series resonator (5), the parallel single crystal film bulk acoustic resonator comprises a first parallel resonator (6) and a second parallel resonator (7), the first radio frequency coupling capacitor comprises a first compensation capacitor (8) and a second compensation capacitor (9).
2. The silicon back-etched type single crystal thin film bulk acoustic resonator optimized by radio frequency capacitance according to claim 1, wherein: the second series resonator (5), the first parallel resonator (6) and the second parallel resonator (7) are respectively identical to the first series resonator (4) in composition and structure.
3. The silicon back-etched type single crystal thin film bulk acoustic resonator optimized by radio frequency capacitance according to claim 2, wherein: the first series resonator (4) comprises a second silicon substrate (10), a resonator bottom electrode (11), a single crystal piezoelectric film (12), a resonator top electrode (13), a second radio frequency coupling capacitor lower electrode (14), a silicon dioxide dielectric layer (15), a second radio frequency coupling capacitor upper electrode (16) and a metal connecting piece (17), the second silicon substrate (10) is provided with a first through hole (18) and a second through hole (19), the bottom of the single crystal piezoelectric film (12) is provided with a first groove (20) and a second groove (21) which are matched with the resonator bottom electrode (11), the silicon dioxide dielectric layer (15) is provided with a third groove (22) and a fourth groove (24) which are matched with the resonator top electrode (13), a fifth groove (24) which is matched with the second radio frequency coupling capacitor lower electrode (14) and a third through hole (25), the metal connecting piece (17) connects the resonator top electrode (13) and the second radio frequency coupling capacitance upper electrode (16) together through a third through hole (25).
4. The silicon back-etched type single crystal thin film bulk acoustic resonator optimized by radio frequency capacitance according to claim 3, wherein: the top electrode of the first parallel resonator (6) is connected with the bottom electrodes of the first series resonator (4) and the second series resonator (5), the top electrode of the second parallel resonator (7) is connected with the bottom electrode of the second series resonator (5), the upper electrode of the first compensation capacitor (8) is connected with the bottom electrode of the first parallel resonator (6), and the upper electrode of the second compensation capacitor (9) is connected with the bottom electrode of the second parallel resonator (7).
5. The silicon back-etched type single crystal thin film bulk acoustic resonator optimized by radio frequency capacitance according to claim 4, wherein: the thickness of the silicon dioxide dielectric layer (15) is 100 nm-3.5 mu m, the thickness of the second radio frequency coupling capacitor upper electrode (16) is 50 nm-2 mu m, and the thickness of the second radio frequency coupling capacitor lower electrode (14) is 50 nm-1 mu m; the thickness of the single crystal piezoelectric film (12) is 500 nm-4 um.
6. The silicon back-etched type single crystal thin film bulk acoustic resonator optimized by radio frequency capacitance according to claim 5, wherein: the thickness of the second silicon substrate (10) is 575um, the thickness of the top electrode (13) of the resonator is 30 nm-1 um, and the thickness of the bottom electrode (11) of the resonator is 30 nm-1 um.
7. A method of manufacturing a first series resonator, the method comprising the steps of:
step S1, growing a resonator bottom electrode (11) on a second silicon substrate (10);
step S2, patterning the bottom electrode metal (11) on the substrate of step S1, and depositing the single crystal piezoelectric film (12);
step S3, a resonator top electrode (13) and a second radio frequency coupling capacitor lower electrode (14) are sputtered or evaporated on the single crystal piezoelectric film (12);
step S4, the top electrode (13) is patterned on the basis of the step S3, and a silicon dioxide dielectric layer (15) is deposited;
step S5, etching and forming a first through hole (18) and a second through hole 19 on the back of the second silicon substrate (10);
step S6, preparing a second radio frequency coupling capacitor upper electrode (16) and a third through hole (25) on the SiO2 dielectric layer (15);
and step S7, electrically connecting the top electrode (13) of the resonator and the upper electrode (16) of the second radio frequency coupling capacitor through metal evaporation to finish the preparation.
8. A method of manufacturing a first series resonator according to claim 7, wherein: the method for depositing the single-crystal piezoelectric film comprises one or more of PVD, MOCVD, PLD and ALD, the method for growing the bottom electrode of the resonator is magnetron sputtering, and the method for depositing the silicon dioxide dielectric layer is PECVD.
9. A method of manufacturing a first series resonator according to claim 8, wherein: the upper electrode of the second radio frequency coupling capacitor is made of any one of Mo, Pt, Ti and Au, and the lower electrode of the second radio frequency coupling capacitor is made of any one of Mo, Pt, Ti and Au.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112152585A (en) * | 2020-08-19 | 2020-12-29 | 合肥先微企业管理咨询合伙企业(有限合伙) | Single-crystal piezoelectric resonator for constructing 5G base station radio frequency filter and preparation method |
| CN113644893A (en) * | 2021-06-30 | 2021-11-12 | 中国电子科技集团公司第十三研究所 | Bulk acoustic wave filter and filter assembly |
| CN114362717A (en) * | 2022-01-11 | 2022-04-15 | 武汉敏声新技术有限公司 | Film bulk acoustic resonator and preparation method thereof |
| CN115694412A (en) * | 2022-12-30 | 2023-02-03 | 成都频岢微电子有限公司 | Integrated capacitor bulk acoustic wave resonator, filter and manufacturing method |
-
2020
- 2020-04-01 CN CN202010251043.2A patent/CN111355467A/en not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112152585A (en) * | 2020-08-19 | 2020-12-29 | 合肥先微企业管理咨询合伙企业(有限合伙) | Single-crystal piezoelectric resonator for constructing 5G base station radio frequency filter and preparation method |
| CN113644893A (en) * | 2021-06-30 | 2021-11-12 | 中国电子科技集团公司第十三研究所 | Bulk acoustic wave filter and filter assembly |
| CN113644893B (en) * | 2021-06-30 | 2023-07-25 | 中国电子科技集团公司第十三研究所 | Bulk acoustic wave filter and filter assembly |
| CN114362717A (en) * | 2022-01-11 | 2022-04-15 | 武汉敏声新技术有限公司 | Film bulk acoustic resonator and preparation method thereof |
| CN114362717B (en) * | 2022-01-11 | 2023-11-03 | 武汉敏声新技术有限公司 | Film bulk acoustic resonator and preparation method thereof |
| CN115694412A (en) * | 2022-12-30 | 2023-02-03 | 成都频岢微电子有限公司 | Integrated capacitor bulk acoustic wave resonator, filter and manufacturing method |
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