CN112152585A - Single-crystal piezoelectric resonator for constructing 5G base station radio frequency filter and preparation method - Google Patents
Single-crystal piezoelectric resonator for constructing 5G base station radio frequency filter and preparation method Download PDFInfo
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- H—ELECTRICITY
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Abstract
The invention provides a single crystal piezoelectric resonator for constructing a 5G base station radio frequency filter and a preparation method thereof, wherein the preparation method comprises the following steps: the resonator comprises a resonator substrate 1, a protective layer 2, a resonator flat bottom electrode 3, a single crystal piezoelectric material 4, a through hole metal 5, a first convex structure 6, a resonator cross upper electrode 7 and a second convex structure 8; the resonator substrate 1 can support a single crystal piezoelectric resonator for constructing a 5G base station radio frequency filter; the resistance of the resonator substrate 1 is greater than a set threshold; the lattice constant of the resonator substrate 1 is matched with the single crystal piezoelectric material 4; the protective layer 2 covers the bottom electrode 3 of the resonator plate and the crossed upper electrode 7 of the resonator; the invention ensures the absolute flatness of the single crystal piezoelectric material by adopting the process of etching the air cavity behind the dielectric material. The air reflection cavity has the advantages of perfect reflection of sound waves, convenience in processing, high reliability and the like.
Description
Technical Field
The invention relates to the technical field of piezoelectric resonators, in particular to a single-crystal piezoelectric resonator for constructing a 5G base station radio frequency filter and a preparation method thereof.
Background
With the rapid development of 5G (fifth generation mobile communication technology) communication technology, various new high-performance communication systems are emerging. Mobile terminal products such as mobile phones, tablets, bluetooth, WiFi and the like have unprecedented transmission rates and link capabilities, and a base station system serving as a base end of a mobile communication technology is also a key technical innovation of a base station system in a 5G communication technology, which is a need for a brand-new technical revolution, and a high-performance and miniaturized small base station system serving as a supplement of a traditional macro base station system. The performance of the rf filter, which is one of the most critical components of the base station system, directly affects the frequency division of the signal and the quality of the signal. Because of the requirement of high bearing power of the traditional macro base station, a metal cavity filter or a cavity dielectric filter is generally adopted, but because the size of the 5G small base station is greatly reduced compared with that of the macro base station, and the number of deployments is also greatly increased, the traditional metal cavity or cavity dielectric filter can not meet the requirements of the size and the cost any more.
Patent document CN105244575B discloses a novel dielectric cavity filter. The dielectric cavity filter can realize the purposes of waveguide coaxial conversion and filtering of high-order mode electromagnetic waves in waveguide transmission signals through the waveguide coaxial conversion feed structure arranged at the waveguide port, thereby ensuring the normal work of the filter and subsequent microwave radio frequency devices. The patent is not well suited for the development of 5G small base stations in size compared to macro base stations.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a single-crystal piezoelectric resonator for constructing a 5G base station radio frequency filter and a preparation method thereof.
The invention provides a single crystal piezoelectric resonator for constructing a 5G base station radio frequency filter, which is characterized by comprising: the resonator comprises a resonator substrate 1, a protective layer 2, a resonator flat bottom electrode 3, a single crystal piezoelectric material 4, a through hole metal 5, a first convex structure 6, a resonator cross upper electrode 7 and a second convex structure 8; the resonator substrate 1 can support a single crystal piezoelectric resonator for constructing a 5G base station radio frequency filter; the resistance of the resonator substrate 1 is greater than a set threshold; the lattice constant of the resonator substrate 1 is matched with the single crystal piezoelectric material 4; the protective layer 2 covers the bottom electrode 3 of the resonator plate and the crossed upper electrode 7 of the resonator; and the function of protecting the metal layer is achieved. In addition, the subsequent thickness trimming process can also play a role in adjusting the frequency of the resonator. The protective layer 2 is made of a dielectric material which is not easy to oxidize; the bottom electrode 3 of the resonator adopts a flat plate structure; an excitation electric field can be formed between the resonator bottom electrode 3 and the resonator cross upper electrode 7; the excitation electric field excites sound waves in the single crystal piezoelectric material 4; the single crystal piezoelectric material 4 has crystal face distribution with set axial arrangement; the single crystal piezoelectric material 4 is a main body material of the piezoelectric resonator, and generally has a strong axially-arranged crystal plane distribution, and the energy attenuation of an acoustic wave signal can be greatly reduced by passing through the single crystal material structure. Since the attenuated energy is typically converted to heat in various ways. There is a reduction in the scattering loss since both contribute to the reduction of energy, thereby improving the quality factor and the loadable power of the resonator. The through hole metal 5 is connected with the bottom electrode 3 of the resonator flat plate to the upper surface of the single crystal piezoelectric material 4; and the function of connecting a ground signal is realized. The metal material 5 may be formed by metal evaporation or metal sputtering, and the resistance of the via metal 5 is smaller than a set threshold; the first bump structure 6 is formed on the single crystal piezoelectric material 4; the effect is to enhance the reflection of the transverse acoustic wave to reduce the leakage of acoustic energy. The material of the first bump structure 6 can be various, and can be from metal to various dielectric materials; the crossed upper electrode 7 of the resonator adopts a crossed structure. The second bump structures 8 are formed on the single-crystal piezoelectric material 4 and the first bump structures 6.
Preferably, the resonator substrate 1 is made of any one of the following materials: -sapphire; -silicon carbide; -monocrystalline silicon; -high-resistivity silicon; the thickness of the resonator substrate 1 is about tens to hundreds of micrometers; the protective layer 2 is made of any one of the following materials: -silica; -silicon nitride; silicon oxynitride or the like; the depth of the protective layer 2 may be between several tens of nanometers and several hundreds of nanometers, depending on the requirements.
Preferably, the resonator bottom electrode 3 is connected by any one of the following connection methods: -a ground mode; in an overhead manner.
Preferably, the resonator bottom electrode 3 is typically a metal thin film material; the bottom electrode 3 of the resonator is made of any one of the following materials: -a molybdenum material; -a ruthenium material; -a platinum material. The resonator bottom electrode 3 can be realized by means of dry etching metal or metal stripping process, and the thickness is between dozens of nanometers and hundreds of nanometers.
Preferably, the single-crystal piezoelectric material 4 is made of any one of the following materials: -lithium niobate; -lithium tantalate; -aluminum nitride; -doped aluminium nitride; barium strontium titanate. The single-crystal piezoelectric material 4 is manufactured by any one of the following methods: -ion slicing; -plasma assisted molecular beam epitaxy; -metal organic chemical vapour deposition; -physical vapour deposition. The thickness of the single crystal piezoelectric material 4 determines the frequency of the resonator, and generally, the thickness and the resonant frequency are in inverse proportion, and can be determined according to actual requirements.
Preferably, the through hole metal 5 is made of any one of the following materials: -a molybdenum material; -a ruthenium material; -a gold material; -a copper material; -an aluminium material;
the first convex structure 6 is made of any one of the following materials: -a molybdenum material; -a ruthenium material; -a platinum material; -a gold material; -a tungsten material; -a silica material; -a silicon nitride material. The height, width and delay of the raised structures all affect the reflection effect. In addition, the optimal size of the first bump structure may also vary due to frequency variation.
Preferably, the cross upper electrode 7 of the resonator adopts any one of the following connection modes: -full power-up; -alternate powering; -ground.
The resonator cross top electrode 7 is typically a metal thin film material; the crossed upper electrode 7 of the resonator adopts any one of the following materials: -a molybdenum material; -a ruthenium material; -a platinum material.
Preferably, the number of the crossed upper electrodes 7 of the resonator is one or more; the sizes and shapes of the plurality of resonator intersecting upper electrodes 7 are uniform; the distances between the intersecting upper electrodes 7 of the plurality of resonators are equal; the number of electrodes of the crossed upper electrode 7 of the resonator can be determined according to requirements; the crossed upper electrode 7 of the resonator can be realized by means of dry etching metal or metal stripping process, and the thickness is between dozens of nanometers and hundreds of nanometers. The thicknesses of the resonator plate bottom electrode 3, the single crystal piezoelectric material 4, and the resonator cross top electrode 7 affect the frequency of the resonator, and more importantly, the electrode width of the resonator cross top electrode 7 also affects the frequency of the resonator. The electrode width of the crossed upper electrode 7 of the resonator can be determined by a photolithography method, and thus the purpose of freely adjusting the frequency of the resonator can be achieved by a photolithography method which can be extremely simple and convenient.
The second convex structures 8 are formed on the single-crystal piezoelectric material 4 and the first convex structures 6, and function to further enhance reflection of acoustic waves and reduce sensitivity to changes in reflection coefficient. The material of the second protruding structure comprises molybdenum, ruthenium, platinum, gold, tungsten, silicon dioxide and silicon nitride. The second raised structures and the first raised structures together affect the effect of reflection, and the size and material of the second raised structures and the first raised structures are typically determined according to the specific design of the device.
According to the preparation method of the single-crystal piezoelectric resonator for constructing the 5G base station radio frequency filter, the single-crystal piezoelectric resonator for constructing the 5G base station radio frequency filter is adopted, and the preparation method comprises the following steps: step S1: preparing a resonator substrate 1; step S2: depositing a single crystal piezoelectric material on the upper surface of the substrate; step S3: forming a through hole on the single crystal piezoelectric material for future connection to the bottom electrode; step S4: depositing metal in the via opening to connect the bottom electrode to the upper surface of the single crystal piezoelectric material; step S5: forming a first convex structure on the upper surface of the single-crystal piezoelectric material; step S6: depositing an upper electrode and a second protruding structure; step S7: covering a protective layer on the upper surface of the first protruding structure and the upper surface of the second protruding structure; step S8: forming a groove with a larger set size on the back of the dielectric material; step S9: depositing a bottom electrode of the resonator on the lower surface of the single-crystal piezoelectric material; step S10: the bottom electrode of the resonator is covered with a protective layer.
Preferably, the step S2 includes: s2.1, depositing the single-crystal piezoelectric material on the upper surface of the substrate by any one of the following methods: -ion slicing; -plasma assisted molecular beam epitaxy; -metal organic chemical vapour deposition; -physical vapour deposition.
Compared with the prior art, the invention has the following beneficial effects:
1. according to the invention, the single-crystal piezoelectric material is used as the main body material of the piezoelectric resonator, so that the energy loss in the form of heat can be greatly reduced, and the bearable power of the piezoelectric resonator is obviously improved. The piezoelectric resonator provided by the invention has the advantages of bearing high power, small volume and the like, overcomes the defect that the traditional piezoelectric resonator can only be applied to low-bearing-power terminal products such as mobile phones and the like, and provides a resonator structure applicable to a 5G small base station radio frequency filter for the first time.
2. The invention ensures the absolute flatness of the single crystal piezoelectric material by adopting the process of etching the air cavity behind the dielectric material. The air reflection cavity has the advantages of perfect reflection of sound waves, convenience in processing, high reliability and the like.
3. The upper electrode of the resonator is defined by adopting a photoetching method, so that the width of the electrode can be changed at will, and the frequency of the resonator can be adjusted at will. The piezoelectric resonator provided by the invention has the advantage of monolithic integration of multiple frequencies, and overcomes the defect of monolithic single frequency of the traditional bulk acoustic wave thin-film resonator.
4. The invention can meet the requirements of different electrical properties and structural properties by adopting the bottom electrode and the upper electrode with different shapes. The various electrode shapes proposed by the invention enable the resonators to have different resonant coupling coefficients and quality factors. The above advantages make the invention have the advantages of designing filters with various bandwidths and low insertion loss.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
fig. 1 is a first overall structural diagram in the embodiment of the present invention.
Fig. 2 is a second overall structural diagram in the embodiment of the present invention.
Fig. 3 is a third overall structural schematic diagram in the embodiment of the present invention.
Fig. 4 is a fourth overall structural schematic diagram in the embodiment of the present invention.
Fig. 5 is a fifth overall structural schematic diagram in the embodiment of the present invention.
Fig. 6 is a sixth overall structural schematic diagram in the embodiment of the present invention.
Fig. 7 is a seventh overall structural schematic diagram in the embodiment of the present invention.
Fig. 8 is an eighth schematic overall structure diagram in the embodiment of the present invention.
Fig. 9 is a ninth overall structural schematic diagram in the embodiment of the present invention.
Fig. 10 is a tenth overall structural schematic diagram in the embodiment of the present invention.
FIG. 11 is a flowchart illustrating a first method according to an embodiment of the present invention.
Fig. 12 is a flowchart illustrating a second method according to an embodiment of the present invention.
Fig. 13 is a schematic flow chart of a third method according to an embodiment of the present invention.
Fig. 14 is a fourth process flow diagram in an embodiment of the invention.
Fig. 15 is a schematic flow chart of a fifth method in the embodiment of the invention.
Fig. 16 is a schematic flow chart of a sixth method in an example of the invention.
Fig. 17 is a flow chart of a seventh method in the embodiment of the invention.
Fig. 18 is a schematic flow chart of an eighth method in the embodiment of the present invention.
FIG. 19 is a flow chart of a ninth method according to an embodiment of the present invention.
Fig. 20 is a schematic flow chart of a tenth method in the embodiment of the present invention.
In the figure:
1-resonator substrate 7-resonator interdigitated upper electrode
2-protective layer 8-second bump structure
3-resonator plate bottom electrode 9-resonator cross bottom electrode
4-single crystal piezoelectric material 10-resonator plate upper electrode
5-through hole metal 11-resonator full-coverage bottom electrode
6-first bump structure
Detailed Description
The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the invention, but are not intended to limit the invention in any way. It should be noted that it would be obvious to those skilled in the art that various changes and modifications can be made without departing from the spirit of the invention. All falling within the scope of the present invention.
As shown in fig. 1 to 10, the single crystal piezoelectric resonator for constructing a 5G base station rf filter according to the present invention includes: the resonator comprises a resonator substrate 1, a protective layer 2, a resonator flat bottom electrode 3, a single crystal piezoelectric material 4, a through hole metal 5, a first convex structure 6, a resonator cross upper electrode 7 and a second convex structure 8; the resonator substrate 1 can support a single crystal piezoelectric resonator for constructing a 5G base station radio frequency filter; the resistance of the resonator substrate 1 is greater than a set threshold; the lattice constant of the resonator substrate 1 is matched with the single crystal piezoelectric material 4; the protective layer 2 covers the bottom electrode 3 of the resonator plate and the crossed upper electrode 7 of the resonator; plays a role of protecting the metal layer. In addition, the subsequent thickness trimming process can also play a role in adjusting the frequency of the resonator. The protective layer 2 is made of a dielectric material which is not easy to oxidize; the bottom electrode 3 of the resonator adopts a flat plate structure; an excitation electric field can be formed between the resonator bottom electrode 3 and the resonator cross upper electrode 7; the excitation electric field excites sound waves in the single crystal piezoelectric material 4; the single crystal piezoelectric material 4 has crystal face distribution with set axial arrangement; the single crystal piezoelectric material 4 is a main body material of the piezoelectric resonator, and generally has a strong axially-arranged crystal plane distribution, and the energy attenuation of an acoustic wave signal can be greatly reduced by passing through the single crystal material structure. Since the attenuated energy is typically converted to heat in various ways. There is a reduction in the scattering loss since both contribute to the reduction of energy, thereby improving the quality factor and the loadable power of the resonator. The through hole metal 5 is connected with the bottom electrode 3 of the resonator flat plate to the upper surface of the single crystal piezoelectric material 4; and the function of connecting a ground signal is realized. The metal material 5 may be formed by metal evaporation or metal sputtering, and the resistance of the via metal 5 is smaller than a set threshold; the first bump structure 6 is formed on the single crystal piezoelectric material 4; the effect is to enhance the reflection of the transverse acoustic wave to reduce the leakage of acoustic energy. The material of the first bump structure 6 can be various, and can be from metal to various dielectric materials; the crossed upper electrode 7 of the resonator adopts a crossed structure. The second convex structures 8 are formed on the single-crystal piezoelectric material 4 and the first convex structures 6, and function to further enhance reflection of acoustic waves and reduce sensitivity to changes in reflection coefficient. The material of the second protruding structure comprises molybdenum, ruthenium, platinum, gold, tungsten, silicon dioxide and silicon nitride. The second raised structures and the first raised structures together affect the effect of reflection, and the size and material of the second raised structures and the first raised structures are typically determined according to the specific design of the device.
The application proposes to solve the requirement of the 5G small base station filter by using a radio frequency piezoelectric filter on a mobile terminal product for the first time. In order to meet the relatively high power-carrying requirement of a small base station, the application proposes a piezoelectric resonator (a resonator is a basic unit for constructing a filter) constructed by using a single crystal piezoelectric material, so that the power-carrying capacity of the piezoelectric resonator is remarkably improved. In addition, the method for etching the air cavity behind the dielectric material ensures absolute flatness of the single crystal piezoelectric material, so that the piezoelectric resonator has the advantages of simplicity in processing, excellent performance, high reliability and the like.
Preferably, the resonator substrate 1 is made of any one of the following materials: -sapphire; -silicon carbide; -monocrystalline silicon; -high-resistivity silicon; the thickness of the resonator substrate 1 is about tens to hundreds of micrometers; the protective layer 2 is made of any one of the following materials: -silica; -silicon nitride; silicon oxynitride or the like; the depth of the protective layer 2 may be between several tens of nanometers and several hundreds of nanometers, depending on the requirements.
Preferably, the resonator bottom electrode 3 is connected by any one of the following connection methods: -a ground mode; in an overhead manner.
Preferably, the resonator bottom electrode 3 is typically a metal thin film material; the bottom electrode 3 of the resonator is made of any one of the following materials: -a molybdenum material; -a ruthenium material; -a platinum material. The resonator bottom electrode 3 can be realized by means of dry etching metal or metal stripping process, and the thickness is between dozens of nanometers and hundreds of nanometers.
Preferably, the single-crystal piezoelectric material 4 is made of any one of the following materials: -lithium niobate; -lithium tantalate; -aluminum nitride; -doped aluminium nitride; barium strontium titanate. The single-crystal piezoelectric material 4 is manufactured by any one of the following methods: -ion slicing; -plasma assisted molecular beam epitaxy; -metal organic chemical vapour deposition; -physical vapour deposition. The thickness of the single crystal piezoelectric material 4 determines the frequency of the resonator, and generally, the thickness and the resonant frequency are in inverse proportion, and can be determined according to actual requirements.
Preferably, the through hole metal 5 is made of any one of the following materials: -a molybdenum material; -a ruthenium material; -a gold material; -a copper material; -an aluminium material;
the first convex structure 6 is made of any one of the following materials: -a molybdenum material; -a ruthenium material; -a platinum material; -a gold material; -a tungsten material; -a silica material; -a silicon nitride material. The height, width and delay of the raised structures all affect the reflection effect. In addition, the optimal size of the first bump structure may also vary due to frequency variation.
Preferably, the cross upper electrode 7 of the resonator adopts any one of the following connection modes: -full power-up; -alternate powering; -ground.
The resonator cross top electrode 7 is typically a metal thin film material; the crossed upper electrode 7 of the resonator adopts any one of the following materials: -a molybdenum material; -a ruthenium material; -a platinum material.
Preferably, the number of the crossed upper electrodes 7 of the resonator is one or more; the sizes and shapes of the plurality of resonator intersecting upper electrodes 7 are uniform; the distances between the intersecting upper electrodes 7 of the plurality of resonators are equal; the number of electrodes of the crossed upper electrode 7 of the resonator can be determined according to requirements; the crossed upper electrode 7 of the resonator can be realized by means of dry etching metal or metal stripping process, and the thickness is between dozens of nanometers and hundreds of nanometers. The thicknesses of the resonator plate bottom electrode 3, the single crystal piezoelectric material 4, and the resonator cross top electrode 7 affect the frequency of the resonator, and more importantly, the electrode width of the resonator cross top electrode 7 also affects the frequency of the resonator. The electrode width of the crossed upper electrode 7 of the resonator can be determined by a photolithography method, and thus the purpose of freely adjusting the frequency of the resonator can be achieved by a photolithography method which can be extremely simple and convenient.
In particular, in one embodiment, a piezoelectric resonator may have a variety of bottom, upper electrode shapes. Fig. 1 shows only one of the bottom and top electrode structures proposed in this patent, i.e. the bottom electrode is a flat plate structure and the top electrode is a cross mechanism. Other electrode configurations include those shown in fig. 2 and 3, among others. The electrode structure in fig. 2 is: the bottom electrode and the upper electrode are both cross electrode structures, and the electrode structure in fig. 3 is as follows: the bottom electrode and the upper electrode are both flat plate structures. Fig. 2 to 3 show other implementations of the resonator structure proposed in the present application.
The coverage of the bottom electrode of the piezoelectric resonator has various forms. The coverage of the bottom electrode shown in fig. 1 to 3 is as large as that of the upper electrode, and each covers only the back surface of the single crystal piezoelectric material. In addition to the bottom electrode coverage shown in fig. 1 to 3, there may be a full coverage, as shown in fig. 4 to 5, which includes the entire back surface of the piezoelectric material, the side surface of the substrate material, and the lower surface of the substrate material. Fig. 4 to 5 show other implementations of the resonator structure proposed in the present application.
The number of layers of the protective layer 2 of the piezoelectric resonator may also be different. In fig. 1 to 3, and fig. 4 to 5, the number of layers of the protective layer 2 is two, the first layer is below the bottom electrode, and the second layer is above the upper electrode. Besides the two-layer implementation mode, the number of the layers can be reduced to one according to actual requirements, such as only one layer above the upper electrode or only one layer below the lower electrode. As shown in fig. 6 to 10, we retain the protective layer above the upper electrode and remove the protective layer below the lower electrode. Fig. 6 to 10 show other implementations of the resonator structure proposed in the present application.
As shown in fig. 11 to 20, a method for manufacturing a single-crystal piezoelectric resonator for constructing a 5G base station rf filter according to the present invention includes: step S1: preparing a resonator substrate 1; step S2: depositing a single crystal piezoelectric material on the upper surface of the substrate; step S3: forming a through hole on the single crystal piezoelectric material for future connection to the bottom electrode; step S4: depositing metal in the via opening to connect the bottom electrode to the upper surface of the single crystal piezoelectric material; step S5: forming a first convex structure on the upper surface of the single-crystal piezoelectric material; step S6: depositing an upper electrode and a second protruding structure; step S7: covering a protective layer on the upper surface of the first protruding structure and the upper surface of the second protruding structure; step S8: forming a groove with a larger set size on the back of the dielectric material; step S9: depositing a bottom electrode of the resonator on the lower surface of the single-crystal piezoelectric material; step S10: the bottom electrode of the resonator is covered with a protective layer.
Preferably, the step S2 includes: s2.1, depositing the single-crystal piezoelectric material on the upper surface of the substrate by any one of the following methods: -ion slicing; -plasma assisted molecular beam epitaxy; -metal organic chemical vapour deposition; -physical vapour deposition.
Specifically, in one embodiment, fig. 11-20 are methods of fabricating piezoelectric electrical resonators as set forth herein. The prepared resonator is of a multilayer structure and comprises a resonator substrate 1, a protective layer 2, a resonator flat bottom electrode 3, a single crystal piezoelectric material 4, a through hole metal 5, a first protruding structure 6, a resonator crossed upper electrode 7 and a second protruding structure 8. The preparation of the piezoelectric resonator starts from the resonator substrate 1 in fig. 11. The substrate layer 1 is typically sapphire, silicon carbide, single crystal silicon, high-resistance silicon, or the like, and has a thickness of about several tens to several hundreds of micrometers. After the preparation of the resonator substrate layer 1 is completed, a single crystal piezoelectric material is deposited on the upper surface of the substrate by ion slicing, plasma-assisted Molecular Beam Epitaxy (MBE), Metal Organic Chemical Vapor Deposition (MOCVD), Physical Vapor Deposition (PVD), or the like, as shown in fig. 12. The single crystal piezoelectric material may be lithium niobate (LiNbO3), lithium tantalate (LiTaO3), aluminum nitride (AlN), doped aluminum nitride (AlScN, AlGaN), barium strontium titanate (BaSrTiO3), or the like, as necessary. The deposition process needs to minimize the mismatch degree of the lattice constants between the single-crystal piezoelectric material 4 and the substrate material 1 to ensure that the crystal structure of the deposited single-crystal piezoelectric material is optimal. When the deposition of the single crystal piezoelectric material is completed, as shown in fig. 13, a through-hole opening needs to be formed in the single crystal piezoelectric material for future connection to the bottom electrode. The formation of the via openings can be achieved by means of photolithography, dry or wet etching. Wherein the dry etching can be performed by means of inductively coupled plasma reactive ion etching based on chlorine (Cl2), boron trichloride (BCl3) and argon (Ar), and the wet etching can be performed by means of etching based on acidic liquid such as phosphoric acid. The etching depth of the through hole is not enough to open the single crystal piezoelectric material. When the via step is completed, metal is deposited in the via to connect the bottom electrode to the upper surface of the single crystal piezoelectric material, as shown in fig. 14. The metal deposition in the through holes can be realized by the steps of photoetching, metal evaporation or metal sputtering and the like. The resistivity of the via metal is as low as possible to reduce resistive losses in signal transmission, and alternative metal species include molybdenum, ruthenium, gold, copper, aluminum, and the like. After the deposition of the through-hole metal material is completed, a convex structure I is formed on the upper surface of the single crystal piezoelectric material, as shown in fig. 15. The formation of the protruding structure I can be completed by steps of depositing a protruding structure layer, photoetching, dry etching and the like. Generally, the slope of the bump structure I affects the reflection degree and sensitivity of the acoustic wave, so the photolithography and dry etching steps are particularly important, and the slope of the bump depends on the slope of the photoresist in the photolithography step and the aspect ratio in the dry etching step. The material of the protruding structure I comprises molybdenum, ruthenium, platinum, gold, tungsten, silicon dioxide, silicon nitride and the like. After the bump structure I is completed, the deposition of the top electrode and the second bump structure can be performed, as shown in FIG. 16. The step can be realized by two process steps of photoetching, metal evaporation/sputtering, metal stripping or metal evaporation/metal sputtering/medium deposition, photoetching, dry etching and the like. In some cases, the material and thickness of the upper electrode and the second bump structure are different, and in such a case, it is necessary to perform the formation work of the upper electrode and the second bump structure, respectively. Both of the above-mentioned steps can be adopted. When the upper electrode and the second bump structure are completed, a protective layer is required to cover the upper surfaces of the upper electrode and the second bump structure, as shown in fig. 17. This protective layer is often also referred to as a passivation layer. The passivation layer is usually made of a dielectric material that is not easily oxidized, such as silicon dioxide, silicon nitride, silicon oxynitride, etc., and can be formed by a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, etc., with a thickness determined by requirements. After the protective layer is formed, the process steps above the dielectric material are completed,
the process steps below the dielectric material follow. As shown in fig. 18, a larger recess is first formed in the back side of the dielectric material. The groove can be formed by wet etching or dry etching, the upper surface of the groove needs to be larger than the coverage range of the upper electrode, and the condition that the single crystal piezoelectric material cannot be damaged by the wet etching or the dry etching is ensured. After the grooves are formed, the deposition of the resonator bottom electrode is performed on the lower surface of the single crystal piezoelectric material, as shown in fig. 19. The deposition of the bottom electrode can be realized by two process steps of photoetching, metal evaporation/sputtering, metal stripping or metal evaporation/metal sputtering/medium deposition, photoetching, dry etching and the like. After the bottom electrode is completed, it is the last step in the resonator process, i.e. the covering of the protective layer of the bottom electrode. As shown in fig. 20, the protective layer is formed by Plasma Enhanced Chemical Vapor Deposition (PECVD), and the like, and the material may be silicon dioxide, silicon nitride, silicon oxynitride, and the like. So far, the whole process for manufacturing the piezoelectric resonator is completely finished.
According to the invention, the single-crystal piezoelectric material is used as the main body material of the piezoelectric resonator, so that the energy loss in the form of heat can be greatly reduced, and the bearable power of the piezoelectric resonator is obviously improved. The piezoelectric resonator provided by the invention has the advantages of bearing high power, small volume and the like, overcomes the defect that the traditional piezoelectric resonator can only be applied to low-bearing-power terminal products such as mobile phones and the like, and provides a resonator structure applicable to a 5G small base station radio frequency filter for the first time. The invention ensures the absolute flatness of the single crystal piezoelectric material by adopting the process of etching the air cavity behind the dielectric material. The air reflection cavity has the advantages of perfect reflection of sound waves, convenience in processing, high reliability and the like. The upper electrode of the resonator is defined by adopting a photoetching method, so that the width of the electrode can be changed at will, and the frequency of the resonator can be adjusted at will. The piezoelectric resonator provided by the invention has the advantage of monolithic integration of multiple frequencies, and overcomes the defect of monolithic single frequency of the traditional bulk acoustic wave thin-film resonator. The invention can meet the requirements of different electrical properties and structural properties by adopting the bottom electrode and the upper electrode with different shapes. The various electrode shapes proposed by the invention enable the resonators to have different resonant coupling coefficients and quality factors. The above advantages make the invention have the advantages of designing filters with various bandwidths and low insertion loss.
In the description of the present application, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present application and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application.
The foregoing description of specific embodiments of the present invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes or modifications may be made by one skilled in the art within the scope of the appended claims without departing from the spirit of the invention. The embodiments and features of the embodiments of the present application may be combined with each other arbitrarily without conflict.
Claims (10)
1. A single crystal piezoelectric resonator for use in constructing a 5G base station rf filter, comprising: the resonator comprises a resonator substrate (1), a protective layer (2), a resonator flat plate bottom electrode (3), a single crystal piezoelectric material (4), a through hole metal (5), a first bump structure (6), a resonator cross upper electrode (7) and a second bump structure (8);
the resonator substrate (1) is capable of supporting a single crystal piezoelectric resonator for constructing a 5G base station radio frequency filter;
the resistance of the resonator substrate (1) is greater than a set threshold;
the lattice constant of the resonator substrate (1) is matched with the single crystal piezoelectric material (4);
the protective layer (2) covers the bottom electrode (3) of the flat plate of the resonator and the crossed upper electrode (7) of the resonator;
the bottom electrode (3) of the resonator adopts a flat plate structure;
an excitation electric field can be formed between the resonator bottom electrode (3) and the resonator cross upper electrode (7);
the excitation electric field excites sound waves in the single crystal piezoelectric material (4);
the single-crystal piezoelectric material (4) has crystal face distribution with set axial arrangement;
the through hole metal (5) is connected with the bottom electrode (3) of the resonator flat plate to the upper surface of the single crystal piezoelectric material (4);
the resistance of the through hole metal (5) is smaller than a set threshold value;
the first raised structure (6) is formed on the single crystal piezoelectric material 4;
the crossed upper electrode (7) of the resonator adopts a crossed structure;
the second raised structure (8) is formed on the single crystal piezoelectric material (4) and the first raised structure (6).
2. The single-crystal piezoelectric resonator for constructing a 5G base station radio frequency filter according to claim 1, wherein the resonator substrate (1) is made of any one of the following materials:
-sapphire;
-silicon carbide;
-monocrystalline silicon;
-high-resistivity silicon;
the protective layer (2) is made of any one of the following materials:
-silica;
-silicon nitride;
silicon oxynitride, etc.
3. The single-crystal piezoelectric resonator for constructing a 5G base station radio frequency filter according to claim 1, wherein the resonator bottom electrode (3) is connected by any one of the following connection modes:
-a ground mode;
in an overhead manner.
4. The single-crystal piezoelectric resonator for constructing a 5G base station radio frequency filter according to claim 1, wherein the resonator bottom electrode (3) is made of any one of the following materials:
-a molybdenum material;
-a ruthenium material;
-a platinum material.
5. The single-crystal piezoelectric resonator for constructing a 5G base station radio frequency filter according to claim 1, wherein the single-crystal piezoelectric material (4) is any one of the following materials:
-lithium niobate;
-lithium tantalate;
-aluminum nitride;
-doped aluminium nitride;
-barium strontium titanate;
the single-crystal piezoelectric material (4) is manufactured by adopting any one of the following modes:
-ion slicing;
-plasma assisted molecular beam epitaxy;
-metal organic chemical vapour deposition;
-physical vapour deposition.
6. The single-crystal piezoelectric resonator for constructing a 5G base station radio frequency filter according to claim 1, wherein the through-hole metal (5) is made of any one of the following materials:
-a molybdenum material;
-a ruthenium material;
-a gold material;
-a copper material;
-an aluminium material;
the first protruding structure (6) is made of any one of the following materials:
-a molybdenum material;
-a ruthenium material;
-a platinum material;
-a gold material;
-a tungsten material;
-a silica material;
-a silicon nitride material.
7. The single-crystal piezoelectric resonator for constructing a 5G base station radio frequency filter, according to claim 1, wherein the resonator cross upper electrode (7) is connected by any one of the following connection modes:
-full power-up;
-alternate powering;
-ground;
the crossed upper electrode (7) of the resonator adopts any one of the following materials:
-a molybdenum material;
-a ruthenium material;
-a platinum material.
8. The single-crystal piezoelectric resonator for constructing a 5G base station radio frequency filter according to claim 1, wherein the number of the resonator cross upper electrodes (7) is one or more;
the sizes and the shapes of the crossed upper electrodes (7) of the resonators are consistent;
the distances between the crossed upper electrodes (7) of the resonators are equal.
9. A preparation method of a single-crystal piezoelectric resonator for constructing a 5G base station radio frequency filter is characterized in that the single-crystal piezoelectric resonator for constructing the 5G base station radio frequency filter is adopted, and comprises the following steps:
step S1: preparing a resonator substrate;
step S2: depositing a single crystal piezoelectric material on the upper surface of the substrate;
step S3: forming a through hole on the single crystal piezoelectric material;
step S4: depositing metal in the via opening to connect the bottom electrode to the upper surface of the single crystal piezoelectric material;
step S5: forming a first convex structure on the upper surface of the single-crystal piezoelectric material;
step S6: depositing an upper electrode and a second protruding structure;
step S7: covering a protective layer on the upper surface of the first protruding structure and the upper surface of the second protruding structure;
step S8: forming a groove with a set size on the back of the dielectric material;
step S9: depositing a bottom electrode of the resonator on the lower surface of the single-crystal piezoelectric material;
step S10: the bottom electrode of the resonator is covered with a protective layer.
10. The method for manufacturing a single-crystal piezoelectric resonator used for constructing a 5G base station rf filter according to claim 9, wherein the step S2 includes:
s2.1, depositing the single-crystal piezoelectric material on the upper surface of the substrate by any one of the following methods:
-ion slicing;
-plasma assisted molecular beam epitaxy;
-metal organic chemical vapour deposition;
-physical vapour deposition.
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| WO2020132997A1 (en) * | 2018-12-26 | 2020-07-02 | 天津大学 | Single crystal piezoelectric thin film bulk acoustic wave resonator and forming method therefor |
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| WO2020132997A1 (en) * | 2018-12-26 | 2020-07-02 | 天津大学 | Single crystal piezoelectric thin film bulk acoustic wave resonator and forming method therefor |
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