CN111352515A - Touch display device with embedded fingerprint identification function and preparation and use methods thereof - Google Patents

Touch display device with embedded fingerprint identification function and preparation and use methods thereof Download PDF

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Publication number
CN111352515A
CN111352515A CN201811572271.9A CN201811572271A CN111352515A CN 111352515 A CN111352515 A CN 111352515A CN 201811572271 A CN201811572271 A CN 201811572271A CN 111352515 A CN111352515 A CN 111352515A
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China
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layer
fingerprint sensing
imaging array
sensing
active
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CN201811572271.9A
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CN111352515B (en
Inventor
王晓川
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Xinzhiwei Shanghai Electronic Technology Co ltd
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Shanghai Jadic Optoelectronics Technology Co ltd
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/1365—Matching; Classification

Abstract

The invention relates to a touch display device with an embedded fingerprint identification function and a preparation method and a use method thereof, wherein the touch display device sequentially comprises the following components in the incident direction of human vision: the touch screen comprises a transparent medium covering layer, at least one transparent touch positioning induction layer and at least one photoelectric display layer; an active fingerprint sensing imaging array sheet body is embedded in a groove area of the transparent medium covering layer, and the active fingerprint sensing imaging array in the active fingerprint sensing imaging array sheet body comprises a plurality of active fingerprint sensing imaging pixels. According to the invention, the active fingerprint sensing imaging array sheet body is integrated into the transparent medium covering layer on the top layer, so that the active fingerprint sensing imaging array sheet body is close to the fingerprint contacting the transparent medium covering layer in a closest manner, therefore, the sensitivity of fingerprint sensing and the definition of fingerprint imaging can be effectively improved, and a more accurate identity recognition function can be completed.

Description

Touch display device with embedded fingerprint identification function and preparation and use methods thereof
Technical Field
The invention relates to a display device of a portable electronic system, in particular to a touch display device with an embedded fingerprint identification function, and a preparation method and a use method of the touch display device with the embedded fingerprint identification function.
Background
Fingerprint sensing imaging and identification are now becoming a more reliable and widely used method of identity authentication, which is usually accomplished by scanning a fingerprint image, storing the digitized information of the fingerprint image, and comparing the digitized information with some pre-stored reference fingerprint data.
The fingerprint imaging device is integrated into an intelligent electronic device (such as a smart phone or other intelligent handheld devices), so that not only can fingerprint identification and identity authentication be effectively completed, but also other different application functions can be simultaneously completed in the process of completing fingerprint imaging and identity authentication by the intelligent electronic device. At present, a fingerprint sensing imaging device and functions thereof are integrated in a touch interactive display device, which becomes the key point of the development of smart phones or other intelligent handheld devices, so that the human-computer touch interaction is further enhanced, and the area and the occupation ratio of a display screen are increased.
However, the sensitivity of fingerprint sensing and the sharpness of fingerprint imaging of the fingerprint imaging device integrated into the intelligent electronic device have not been able to meet the user's demands, and further improvements are still needed.
Disclosure of Invention
One of the technical problems to be solved by the present invention is to provide a touch display device with embedded fingerprint identification function and a method for using the same, which can improve the sensitivity of fingerprint sensing and the definition of fingerprint imaging of an active fingerprint sensing imaging array.
The second technical problem to be solved by the present invention is to provide a method for manufacturing a touch display device with embedded fingerprint identification function, which can reduce the difficulty of the integration process and improve the sensitivity of fingerprint sensing and the definition of fingerprint imaging of the active fingerprint sensing imaging array.
In order to solve the above technical problem, the present invention provides a touch display device with an embedded fingerprint recognition function, wherein the touch display device with an embedded fingerprint recognition function comprises, in layers along an incident direction of human vision:
a transparent dielectric cover layer having a recessed area formed therein, the recessed area having an active fingerprint sensing imaging array sheet embedded therein, the active fingerprint sensing imaging array sheet having an active fingerprint sensing imaging array formed therein, the active fingerprint sensing imaging array including a plurality of active fingerprint sensing imaging pixels, each of the active fingerprint sensing imaging pixels including at least one sensing pixel semiconductor transistor;
at least one transparent touch location sensing layer configured to sense and locate external contacts on the transparent dielectric overlay; and the number of the first and second groups,
at least one photoelectric display layer, wherein a display unit array is formed in the photoelectric display layer, and the display unit array comprises a plurality of display pixel units.
Optionally, along the human eye vision incident direction, the active fingerprint sensing imaging array sheet includes in layers: a semiconductor dielectric composite sublayer; and, a first dielectric sublayer; wherein the sensing pixel semiconductor transistor is disposed between the semiconductor dielectric composite sublayer and the first dielectric sublayer.
Optionally, the semiconductor dielectric composite sublayer comprises a plurality of insulating dielectric sheets therein.
Optionally, the active fingerprint sensing imaging array sheet further comprises: and the second medium sub-layer is arranged on one side of the semiconductor medium composite sub-layer facing to the human eye visual incidence direction and is opposite to the medium sub-layer.
Optionally, the active fingerprint sensing imaging pixel comprises: and the fingerprint sensing end head unit is arranged in the second medium sublayer and is electrically connected with the sensing pixel semiconductor transistor.
Optionally, the fingerprint sensing end unit is a capacitance sensing unit generating a sensing capacitance for an external contact on the transparent medium covering layer; or; the fingerprint sensing end head unit is a sound wave sensing unit which generates sound wave sensing to the external contact on the transparent medium covering layer; or the fingerprint sensing end unit is an electromagnetic wave sensing unit which generates electromagnetic wave sensing to the external contact on the transparent medium covering layer; or the fingerprint sensing end head unit is a micro-pressure sensing unit which generates micro-pressure sensing to the external contact on the transparent medium covering layer.
Optionally, the sensing pixel semiconductor transistor is disposed between the semiconductor dielectric composite sublayer and the second dielectric sublayer.
Optionally, the active fingerprint sensing imaging array sheet further comprises: a plurality of sets of row interconnection conductors; and, a plurality of sets of column interconnect conductors; wherein each said sensing pixel semiconductor transistor is connected to a corresponding set of said row interconnection conductors and a set of said column interconnection conductors.
Optionally, a plurality of display illumination blocking sheets are formed in the first dielectric sub-layer, and each display illumination blocking sheet is optically vertically aligned with the corresponding sensing pixel semiconductor transistor along the incident direction of the human eye vision.
Optionally, the display pixel unit and the active fingerprint sensing imaging pixel have the same plane size.
Optionally, the thickness of the transparent medium covering layer is 0.01 mm to 1 mm, the thickness of the active fingerprint sensing imaging array sheet body is 0.1 micron to 850 microns, and the thickness of the sensing pixel semiconductor transistor is 0.001 micron to 5 microns.
Optionally, the transparent dielectric cover layer is mainly composed of silicon oxide, and the sensing pixel semiconductor transistor is mainly composed of silicon.
The invention also provides a man-machine interaction device which comprises the touch display device with the embedded fingerprint identification function.
The invention also provides a preparation method of the touch display device with the embedded fingerprint identification function, which comprises the following steps:
providing an active fingerprint sensing imaging array sheet body, wherein an active fingerprint sensing imaging array is formed in the active fingerprint sensing imaging array sheet body, the active fingerprint sensing imaging array comprises a plurality of active fingerprint sensing imaging pixels, and each active fingerprint sensing imaging pixel at least comprises an sensing pixel semiconductor transistor;
providing a transparent medium covering layer sheet body, wherein the transparent medium covering layer sheet body is provided with a transparent medium covering layer, and a groove area is formed in the transparent medium covering layer;
attaching the active fingerprint sensing imaging array sheet body to the groove area of the transparent medium covering layer sheet body;
providing an optoelectronic display layer sheet having at least one optoelectronic display layer having an array of display cells formed therein, the array of display cells comprising a plurality of display pixel units, at least one transparent touch location sensitive layer formed on the optoelectronic display layer sheet, the transparent touch location sensitive layer configured to sense and locate external contacts on the transparent media cover layer;
and attaching the transparent medium covering layer sheet body attached with the active fingerprint sensing imaging array sheet body on the transparent touch positioning sensing layer.
Optionally, the step of providing one active fingerprint sensing imaging array sheet comprises:
providing a semiconductor substrate;
forming a plurality of active fingerprint sensing imaging array sheets on the semiconductor substrate;
cutting the semiconductor substrate to separate each of the active fingerprint induction imaging array sheets.
Optionally, the step of forming a plurality of active fingerprint sensing imaging array sheets on the semiconductor substrate comprises:
forming a semiconductor medium composite sublayer on a first substrate surface of the semiconductor substrate;
forming a first dielectric sub-layer on the semiconductor dielectric composite sub-layer; and the number of the first and second groups,
and forming a plurality of sensing pixel semiconductor transistors between the semiconductor medium composite sublayer and the first medium sublayer.
Optionally, the step of forming a plurality of active fingerprint sensing imaging array sheets on the semiconductor substrate further comprises: forming a plurality of sets of row interconnect wires and a plurality of sets of column interconnect wires in the first dielectric sublayer; each of the sensing pixel semiconductor transistors is electrically connected with a corresponding group of the row interconnection wires and a group of the column interconnection wires.
Optionally, the step of forming a plurality of active fingerprint sensing imaging array sheets on the semiconductor substrate further comprises: forming a plurality of display illumination blocking sheets in the first dielectric sublayer, each display illumination blocking sheet being in optical vertical alignment with a corresponding one of the sense pixel semiconductor transistors.
Optionally, the step of forming a plurality of active fingerprint sensing imaging array sheets on the semiconductor substrate further comprises:
forming a second dielectric sublayer on a second substrate surface of the semiconductor substrate opposite the first substrate surface;
and forming a plurality of regularly arranged fingerprint sensing end units in the second medium sublayer, wherein the fingerprint sensing end units are connected with the sensing pixel semiconductor transistor to form an active fingerprint sensing imaging array comprising a plurality of active fingerprint sensing imaging pixels which are arranged in an array.
Optionally, the step of forming a plurality of active fingerprint sensing imaging array sheets on the semiconductor substrate further comprises:
before the second dielectric sublayer is formed on a second substrate surface, opposite to the first substrate surface, of the semiconductor substrate, the semiconductor substrate is thinned from the second substrate surface to the semiconductor substrate with a partial thickness, or the semiconductor substrate is removed.
Optionally, before thinning the semiconductor substrate from the second substrate side, a temporary carrier substrate is provided, and the first substrate side having the first dielectric sub-layer is attached to the temporary carrier substrate.
Optionally, when the semiconductor substrate is cut, the semiconductor substrate is cut together with the temporary carrier substrate to separate the active fingerprint sensing imaging array sheets.
Optionally, the step of attaching the active fingerprint sensing imaging array sheet within the groove area of the transparent medium cover sheet further comprises:
attaching one side of the second dielectric sublayer of the active fingerprint sensing imaging array sheet body with the temporary bearing substrate to the groove area of the transparent dielectric covering layer sheet body;
removing the temporary bearing substrate on the active fingerprint induction imaging array sheet body;
filling a transparent adhesive into the groove area; and the number of the first and second groups,
planarizing the surface of the transparent dielectric cover sheet body having the active fingerprint sensing imaging array sheet body.
Optionally, after attaching the transparent dielectric cover sheet attached to the active fingerprint sensing imaging array sheet on the transparent touch positioning sensing layer, the manufacturing method further includes: and welding a first flexible connecting sheet on the active fingerprint sensing imaging array sheet body, and welding a second flexible connecting sheet on the transparent touch positioning sensing layer.
The invention also provides a method for using the touch display device with the embedded fingerprint identification function, which comprises the following steps: the display brightness of the display pixel units in the display unit array in the photoelectric display layer corresponding to the active fingerprint induction imaging array sheet body area or the finger contact area is locally enhanced.
Compared with the prior art, the technical scheme of the invention at least has the following beneficial effects:
1. according to the touch display device with the embedded fingerprint identification function, the active fingerprint induction imaging array sheet body is integrated into the transparent medium covering layer on the top layer, so that the active fingerprint induction imaging array sheet body is close to a fingerprint contacting with the transparent medium covering layer in a closest manner, and the active fingerprint induction imaging array in the active fingerprint induction imaging array sheet body actively induces and images the fingerprint through the induction pixel semiconductor transistor with the pixel in-situ amplification function, so that the sensitivity of fingerprint induction and the definition of fingerprint imaging can be effectively improved, and the more accurate identity identification function can be completed. Furthermore, the touch display device with the embedded fingerprint identification function is preferably manufactured by the manufacturing method of the touch display device with the embedded fingerprint identification function, so that the manufacturing difficulty and the process cost are reduced.
2. The invention relates to a method for preparing a touch display device with an embedded fingerprint identification function, which comprises the steps of firstly attaching an active fingerprint induction imaging array sheet body of an active fingerprint induction imaging array with high transparency and high sensitivity to a groove area of a transparent medium covering layer sheet body, and then attaching the transparent medium covering layer sheet body to a photoelectric display layer sheet body with a transparent touch positioning induction layer.
3. According to the application method of the touch display device with the embedded fingerprint identification function, the display brightness of the display pixel units corresponding to the groove regions in the display unit array in the photoelectric display layer is locally enhanced, and the definition of fingerprint imaging can be improved.
Drawings
FIG. 1 is a schematic cross-sectional view of a touch display device with embedded fingerprint recognition function according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of an active fingerprint sensor imaging array sheet according to an embodiment of the present invention
FIG. 3 is a schematic cross-sectional view of a user's finger contacting the touch display device according to an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of a touch display device with embedded fingerprint recognition function according to an embodiment of the present invention;
FIG. 5 is a flowchart of a method for manufacturing a touch display device with embedded fingerprint recognition function according to an embodiment of the present invention;
fig. 6A to 6I are schematic cross-sectional views of devices in a manufacturing method of a touch display device with embedded fingerprint identification function according to an embodiment of the invention;
FIG. 7 is a schematic cross-sectional view of a device in a method for manufacturing a touch display device with embedded fingerprint recognition function according to another embodiment of the present invention;
wherein the reference numbers are as follows:
10-a touch display device; 11-human eye visual incidence direction; 12-a fingerprint recognition module;
100-a transparent dielectric cover layer; 100' -a transparent dielectric cover sheet; 101-a groove region; 110-a transparent adhesive;
200-active fingerprint sensing imaging array sheet; 201-active fingerprint sensing imaging array; 202-peripheral and input-output circuitry; 210-a semiconductor dielectric composite sublayer; 211-active region; 212-a sheet of insulating dielectric; 220 — a first dielectric sublayer; 230-a second dielectric sublayer; 240-a semiconductor substrate; 250-active fingerprint sensing imaging pixels; 251-a sense pixel semiconductor transistor; 252-a fingerprint sensing tip unit; 259-display illumination barrier sheet; 261. 262-bodies of interconnect lines connected to the source or drain and gate, respectively, of the sense pixel semiconductor transistors (i.e. 261 and 262 may be row interconnect lines and/or column interconnect lines, where 261 is defined as a row interconnect line and 262 is defined as a column interconnect line for convenience of description herein); 270-a first flexible connecting sheet; 281-a second adhesive layer;
300-transparent touch location sensitive layer; 310-a second flexible connecting sheet;
400-an electro-optical display layer; 400' -a photoelectric display layer sheet; 401 — an array of display cells; 450-display pixel cell;
500-insulating dielectric layer;
600-a temporary carrier substrate;
700-a first adhesive layer;
800-a third adhesive layer;
900-outer supporter.
Detailed Description
The technical solution proposed by the present invention will be further described in detail with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention. Further, it should be readily understood that the meaning of "on …" and "on …" and the like herein should be interpreted in the broadest sense such that the meaning of "on …" and "on …" and the like is not only "directly on something" without an intervening feature or layer, but also includes the meaning of "on something" with an intervening feature or layer.
Referring to fig. 1 and fig. 2, an embodiment of the present invention provides a touch display device 10 with an embedded fingerprint recognition function, along an incident direction 11 of human vision, the touch display device 10 with an embedded fingerprint recognition function includes, in layers: a transparent dielectric cover layer 100, at least one transparent touch location sensitive layer 300, and at least one electro-optic display layer 400.
With continued reference to fig. 1 and 2, the transparent dielectric cover layer 100 may be any suitable transparent material known to those skilled in the art, such as silicon oxide, plexiglass, sapphire, transparent plastic, etc. A groove area 101 is formed in the transparent medium covering layer 100, and an active fingerprint sensing imaging array sheet 200 is embedded in the groove area 101. The active fingerprint sensing imaging array sheet 200 may be attached to the bottom wall of the groove region 101 by a second adhesive layer 281, and the sidewall of the active fingerprint sensing imaging array sheet 200 may be fixed to the sidewall of the groove region 101 by a transparent adhesive 110.
Referring to fig. 1, 2 and 4, an active fingerprint sensing imaging array 201, a peripheral and input-output circuit 202 are formed in the active fingerprint sensing imaging array sheet 200. The active fingerprint sensing imaging array 201 comprises M × N active fingerprint sensing imaging pixels 250 which are regularly arranged, each active fingerprint sensing imaging pixel 250 at least comprises one sensing pixel semiconductor transistor 251, wherein M is not less than 1, N is not less than 1, and M and N are integers. The sensing pixel semiconductor transistor 251 has a pixel in-situ amplification function, and can actively sense and image a fingerprint of a finger contacting the transparent dielectric cover layer 100. The peripheral and input/output circuit 202 is used for providing various signals required by the active fingerprint sensing imaging array 201 and outputting various signals generated by the active fingerprint sensing imaging array 201, and the peripheral and input/output circuit 202 may include a clock circuit, an analog-to-digital conversion circuit, a sequential logic circuit, an input/output circuit, and the like.
Referring to fig. 1 and 2, along the human eye visual incidence direction 11, the active fingerprint sensing imaging array sheet 200 includes, in layers: a second dielectric sublayer 230, a semiconductor dielectric composite sublayer 210, and a first dielectric sublayer 220. That is, in the active fingerprint sensing imaging array sheet 200, the second dielectric sub-layer 230 is disposed on a side of the semiconductor dielectric composite sub-layer 210 facing the human eye visual incidence direction 11 and opposite to the first dielectric sub-layer 220. The semiconductor dielectric composite sublayer 210 includes an active region 211 and a transparent insulating dielectric sheet 212, where the number of the active region 211 and the number of the transparent insulating dielectric sheet 212 are generally plural, the transparent insulating dielectric sheet 212 is mainly made of silicon oxide, and plays a role in isolation between adjacent transistors in the active region 211 or in isolation between adjacent active regions (usually, shallow trench isolation structure, STI for short), the active region 211 is used to manufacture an inductive pixel semiconductor transistor 251, and may include a well region, a Lightly Doped Drain (LDD) region, a source drain region, and the like, the active region 211 may be formed on a semiconductor substrate 205 through an epitaxial growth process, and when the semiconductor substrate 205 is silicon-on-insulator, the active region 211 may also be top layer silicon of the semiconductor substrate 205. The second dielectric sublayer 230 and the first dielectric sublayer 220 are both made of transparent dielectric materials, and the materials of the two dielectric sublayers may be completely the same or not completely the same. In this embodiment, the transparent dielectric material is, for example, one or a combination of more of barium titanate, iron oxide, strontium titanate, or silicon nitride.
Referring to fig. 2, the sensor pixel semiconductor transistor 251 may be formed between the semiconductor dielectric composite sublayer 210 and the first dielectric sublayer 220 (for example, including a portion extending in the semiconductor dielectric composite sublayer 210 and a portion extending in the first dielectric sublayer 220), or may be disposed between the semiconductor dielectric composite sublayer 210 and the second dielectric sublayer 230 (for example, including a portion extending in the semiconductor dielectric composite sublayer 210, a portion extending in the first dielectric sublayer 220, and a portion extending in the second dielectric sublayer 230). The main material of the sensing pixel semiconductor transistor 251 is a semiconductor such as silicon, and the structure thereof may include a channel region, a gate insulating layer, a gate, a source and a drain (the source and the drain are also referred to as a source and a drain), and other known structures, which are not described herein again.
Referring to fig. 1 to 4, the active fingerprint sensing imaging pixel 250 further includes at least one fingerprint sensing head unit 252, and each of the fingerprint sensing head units 252 is formed in the second dielectric sub-layer 230 and electrically connected to the corresponding sensing pixel semiconductor transistor 251. The fingerprint sensing end unit 252 may be a capacitance sensing unit that generates a sensing capacitance for an external contact on the transparent dielectric covering layer 100, a sound wave sensing unit that generates a sound wave sensing for an external contact on the transparent dielectric covering layer 100, an electromagnetic wave sensing unit that generates an electromagnetic wave sensing for an external contact on the transparent dielectric covering layer 100, or a micro-pressure sensing unit that generates a micro-pressure sensing for an external contact on the transparent dielectric covering layer 100. In specific implementation, the fingerprint sensing end units 252 of all the fingerprint sensing imaging pixels 250 of the active fingerprint sensing imaging array 201 may adopt the same sensing mode, for example, all adopt a capacitance sensing unit, an acoustic wave sensing unit, an electromagnetic wave sensing unit or a pressure sensing unit; alternatively, the fingerprint sensing head units 252 in the active fingerprint sensing imaging array 201 adopt different sensing modes, for example, a part of the fingerprint sensing head units 252 are capacitance sensing units, and another part of the fingerprint sensing head units 252 are acoustic wave sensing units.
With continued reference to fig. 2, the active fingerprint sensing imaging array sheet 200 may further include M × N regularly arranged display illumination blocking sheets 259 and M sets of row interconnection lines 261 and N sets of column interconnection lines 262. Each of the display illumination blocking sheets 259 is formed in the first dielectric sub-layer 220 and is disposed in one-to-one correspondence with the sensing pixel semiconductor transistors 251, and each of the display illumination blocking sheets 259 is vertically aligned with the corresponding sensing pixel semiconductor transistor 251 along the human eye visual incident direction 11. The M sets of row interconnection lines 261 and the N sets of column interconnection lines 262 are formed in the first dielectric sublayer 220, for example, and are formed between the array of display illumination blocking sheets 259 and the array of sensing pixel semiconductor transistors 251, and each of the sensing pixel semiconductor transistors 251 is electrically connected to a corresponding set of row interconnection lines 261 and a corresponding set of column interconnection lines 262.
With continued reference to fig. 2, in the present embodiment, the peripheral and input/output circuits 202 and the active fingerprint sensing imaging array 201 are formed by the same process, and the peripheral and input/output circuits 202 are located at the periphery of the active fingerprint sensing imaging array 201 and are spaced apart from the active fingerprint sensing imaging array 201 by the insulating dielectric sheet 212 in the semiconductor dielectric composite sublayer 210.
Preferably, the thickness of the transparent medium covering layer 100 is 0.01 mm to 1 mm, the thickness of the active fingerprint sensing imaging array sheet 200 is 0.1 micron to 850 microns, and the thickness of the sensing pixel semiconductor transistor 251 is 0.001 micron to 5 microns, so that the thickness of the fingerprint identification module formed by the transparent medium covering layer 100 and the active fingerprint sensing imaging array sheet 200 is relatively thin, and the definition of fingerprint imaging is improved to the greatest extent.
Referring to fig. 1, most of the area of the transparent touch location sensing layer 300 may be configured to sense and locate external contacts (e.g., a finger, a stylus, etc. contacting the transparent medium covering layer 100) on the transparent medium covering layer 100, and these areas of the transparent touch location sensing layer 300 include the area of the transparent touch location sensing layer 300 corresponding to the active fingerprint sensing imaging array sheet 200. The transparent touch positioning sensing layer 300 may include a structure (not shown) such as a touch electrode formed by a grid-shaped metal trace. The transparent touch positioning sensing layer 300 may be formed on the photoelectric display layer 400 through processes such as film deposition and etching, or may be an independent film sheet attached to the photoelectric display layer 400 through packaging processes such as attachment. It should be understood that no matter what process the transparent touch location sensing layer 300 is formed on the optoelectronic display layer 400, the transparent touch location sensing layer 300 and the optoelectronic display layer 400 need to be insulated and isolated by an insulating medium layer 500. The insulating medium layer 500 is made of a transparent material, such as silicon oxide, organic glass material, or transparent adhesive.
Referring to fig. 4, a display unit array 401 is formed in the optoelectronic display layer 400, the display unit array 401 includes a plurality of regularly arranged display pixel units 450, each display pixel unit 450 may include a pixel electrode and a thin film transistor (not shown) for driving the pixel electrode to emit light, the material of the pixel electrode may include a material such as Indium Tin Oxide (ITO), and the material of the thin film transistor mainly includes a semiconductor such as silicon. Preferably, the planar dimensions (including shapes, areas, and the like) of each display pixel unit 450 are the same as those of the active fingerprint sensing imaging pixel 250, so that when a finger touches the transparent medium covering layer 100, the effect of locally enhancing the display brightness of the display pixel unit 450 under the finger can be achieved, and then the contrast between the fingerprint in the obtained fingerprint image and the background can be enhanced, and the definition of the fingerprint can be improved.
Further, with continued reference to fig. 1 and 2, the touch display device with embedded fingerprint recognition function 10 further includes a first flexible connecting sheet 270 and a second flexible connecting sheet 310. The first flexible connecting sheet 270 and the second flexible connecting sheet 310 are disposed on one side of the electro-optical display layer 400, and the first flexible connecting sheet 270 is connected to a bonding pad (not shown) of the peripheral and input-output circuit 202 to input signals to the peripheral and input-output circuit 202 and to transmit signals output from the peripheral and input-output circuit 202 to the outside. The second flexible connecting sheet 310 is electrically connected to the transparent touch positioning sensing layer 300, and is used for inputting signals required by the transparent touch positioning sensing layer 300 and outputting signals generated by the transparent touch positioning sensing layer 300.
It should be appreciated that the touch display device 10 with embedded fingerprint identification function of the present invention has, in addition to the above-listed layers and modules, a structure such as a PCB circuit board where components such as a microprocessor and a memory are located, wherein the microprocessor can receive the finger fingerprint information acquired by the active fingerprint sensing imaging array sheet 200 through the first flexible connecting sheet 270, receive the finger position information acquired by the transparent touch positioning sensing layer 300 through the second connecting sheet 500, compare the acquired finger fingerprint information with the preset fingerprint stored in the memory to identify whether the acquired finger fingerprint is the preset fingerprint, and output a corresponding control command when the acquired finger fingerprint is the preset fingerprint.
According to the touch display device with the embedded fingerprint identification function, the active fingerprint sensing imaging array sheet body is integrated into the transparent medium covering layer on the top layer, so that the active fingerprint sensing imaging array sheet body is close to a fingerprint contacting with the transparent medium covering layer in a closest manner, and the active fingerprint sensing imaging array in the active fingerprint sensing imaging array sheet body actively senses and images the fingerprint through the sensing pixel semiconductor transistor with the pixel in-situ amplification function, so that the sensitivity of fingerprint sensing and the definition of fingerprint imaging can be effectively improved, and a more accurate identity identification function can be completed.
The touch display device with the embedded fingerprint identification function can be a functional module, can be a man-machine interaction device which is formed by further packaging with other functional modules and has the fingerprint identification function, the touch display function and the functions of the touch display function, and can also be an independent device with the fingerprint identification function and the touch display function. The touch display device with the embedded fingerprint identification function can be applied to various electronic devices such as mobile phone login mobile wireless communication equipment, tablet computers, notebook computers, intelligent televisions, intelligent wearable equipment, sports equipment, medical equipment and bank equipment.
Referring now to fig. 3 and 4 in conjunction with fig. 1 and 2, when using the above-described touch display device 10 with embedded fingerprint recognition functionality, when a user's finger touches a portion of the transparent media cover layer 100 corresponding to the active fingerprint sensing imaging array sheet 200, the active fingerprint sensing imaging array sheet 200 is capable of fingerprint sensing of the finger, the transparent touch location sensitive layer 300 is capable of sensing and locating the position of the finger, and at this time, locally enhance the display brightness of the display pixel cells 450 of the display cell array 401 in the electro-optical display layer 400 in the finger contact area, as in fig. 4, the display luminance of the display pixel unit 450 is enhanced only on the left side of the vertical dotted line L, the contrast between the finally obtained fingerprint image and the background thereof can be enhanced, thereby enhancing the definition of the fingerprint image. In other embodiments of the present invention, when a user's finger contacts a portion of the transparent medium covering layer 100 corresponding to the active fingerprint sensing imaging array sheet 200 when using the above-mentioned touch display device 10 with embedded fingerprint identification function, the display brightness of the display pixel units 450 of the display unit array 401 in the electro-optical display layer 400 corresponding to the groove region 101 (i.e. the whole active fingerprint sensing imaging array sheet 200) can be further enhanced to enhance the definition of the finally obtained fingerprint image.
Referring to fig. 5, an embodiment of the present invention further provides a method for manufacturing a touch display device with an embedded fingerprint identification function, including the following steps:
s1, providing an active fingerprint sensing imaging array sheet, wherein an active fingerprint sensing imaging array is formed in the active fingerprint sensing imaging array sheet, the active fingerprint sensing imaging array includes a plurality of active fingerprint sensing imaging pixels, and each active fingerprint sensing imaging pixel includes at least one sensing pixel semiconductor transistor;
s2, providing a transparent medium covering layer sheet body, wherein the transparent medium covering layer sheet body is provided with a transparent medium covering layer, and a groove area is formed in the transparent medium covering layer;
s3, attaching the active fingerprint sensing imaging array sheet body to the groove area of the transparent medium covering layer sheet body;
s4, providing an optoelectronic display layer sheet having at least one optoelectronic display layer, wherein the optoelectronic display layer has a display unit array formed therein, and the display unit array comprises a plurality of display pixel units;
s5, forming at least one transparent touch location sensing layer on the electro-optical display layer sheet, the transparent touch location sensing layer configured to sense and locate external contacts on the transparent dielectric cover layer sheet;
and S6, attaching the transparent medium covering layer sheet body attached to the active fingerprint sensing imaging array sheet body on the transparent touch positioning sensing layer.
In step S1, the process of providing an active fingerprint sensing imaging array sheet 200 is as follows:
s1.1, referring to fig. 6A, a semiconductor substrate 205 is provided, wherein the semiconductor substrate 205 may be any suitable semiconductor material known to those skilled in the art, such as Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP, InGaAs, or other III/V compound semiconductors, or a multilayer structure composed of these semiconductor materials, or silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-on-insulator germanium (S-SiGeOI), silicon-on-insulator germanium (SiGeOI), and germanium-on-insulator (GeOI).
S1.2, with continuing reference to fig. 6A, a semiconductor dielectric composite sublayer 210 is formed on a first substrate surface (a surface facing away from the incident direction 11 of human vision) of the semiconductor substrate 205 through a series of suitable processes such as deposition, photolithography, etching, and the like, where the semiconductor dielectric composite sublayer 210 is, for example, a transparent insulating dielectric sheet 212 including active regions 211 and used for isolating the active regions 211, and the transparent insulating dielectric sheet 212 is mainly made of silicon oxide. The active region 211 is used for manufacturing the sensing pixel semiconductor transistor 251, and may include a well region, a Lightly Doped Drain (LDD) region, a source drain region, and the like, the active region 211 may be formed on the semiconductor substrate 205 through an epitaxial growth process, and when the semiconductor substrate 205 is silicon on an insulator, the active region 211 may also be top silicon of the semiconductor substrate 205.
S1.3, with continued reference to fig. 6A, a first dielectric sub-layer 220 is formed on the semiconductor dielectric composite sub-layer 210, where the first dielectric sub-layer 220 is a transparent dielectric material, and the transparent dielectric material is, for example, barium titanate, iron oxide, strontium titanate, or silicon nitride. In the process of forming the semiconductor dielectric composite sublayer 210 or in the process of forming the first dielectric sublayer 220, M × N sensing pixel semiconductor transistors 251 arranged regularly are manufactured between the semiconductor dielectric composite sublayer 210 and the first dielectric sublayer 220 through a series of suitable processes such as ion implantation, deposition, photolithography, etching and the like, each sensing pixel semiconductor transistor 251 has a pixel in-situ amplification function, can actively sense and image fingerprints of fingers contacting the transparent dielectric cover layer 100, and can have a structure including a channel region, a gate insulating layer, a gate, a source, a drain (source and drain are also called as source and drain), and the like. Each of the sensing pixel semiconductor transistors 251 may include at least one of a portion extending in the semiconductor substrate 205 (e.g., an active layer including a channel region, a source, and a drain), a portion extending in the semiconductor dielectric composite sublayer 210 (e.g., a gate and a gate insulating layer), and a portion extending in the first dielectric sublayer 220 (e.g., a metal silicide and an insulating dielectric covering the gate and the source and drain). In addition, the first dielectric sub-layer 220 is a stacked structure, and before a certain layer (not shown) of the first dielectric sub-layer 220 is formed, M groups of row interconnection lines 261 and N groups of column interconnection lines 262 are formed in a stacked layer before the certain layer of the first dielectric sub-layer 220 through a series of suitable processes such as photolithography, etching, deposition, and the like, and each of the sensor pixel semiconductor transistors 251 is connected to a corresponding group of row interconnection lines 261 and a corresponding group of column interconnection lines 262. Then, after depositing the certain one of the first dielectric sub-layers 220, through a series of suitable processes such as photolithography, etching, deposition, etc., M × N display illumination blocking sheets 259 are formed in the certain one of the first dielectric sub-layers 220, where each of the display illumination blocking sheets 259 is disposed in one-to-one correspondence with a corresponding one of the sensor pixel semiconductor transistors 251, and each of the display illumination blocking sheets 259 is aligned optically perpendicular to the corresponding sensor pixel semiconductor transistor 251 along a direction of incidence (as shown in fig. 1 and 11 in fig. 2) that is visible to human eyes. It should be appreciated that, while the active fingerprint sensing imaging array 201 is formed, a peripheral and input-output circuit 202 is formed at the periphery of the active fingerprint sensing imaging array 201, and the peripheral and input-output circuit 202 is used for providing various signals required for the active fingerprint sensing imaging array 201 and outputting various signals generated by the active fingerprint sensing imaging array 201 outwards.
S1.4, with continued reference to fig. 6A, a temporary carrier substrate 600 is provided, where the temporary carrier substrate 600 may be a semiconductor die, a glass substrate, a plastic substrate, a ceramic substrate, or the like, and is used to provide support for a subsequent process. The first substrate surface with the first dielectric sub-layer 220 is attached to the temporary carrier substrate 600, that is, the exposed upper surface (i.e., the surface facing away from the incident direction of the human eye vision) of the first dielectric sub-layer 220 is attached to the temporary carrier substrate 600 through a second adhesive layer 700, and the second adhesive layer 700 may be selected from an adhesive tape, various organic films made of an organic polymer material or an ultraviolet-changeable organic material and combined with a spin-coating process and a photolithography process, such as a chip attachment film (DAF), a dry film (dry film), or a photoresist. The thickness of the second adhesive layer 700 is set as needed, and the number of layers of the second adhesive layer 700 is not limited to one, but may be two or more.
S1.5, referring to fig. 6B, the semiconductor substrate 205 is inverted to thin the semiconductor substrate 205 from the second substrate surface of the semiconductor substrate 205 (i.e., the surface of the semiconductor substrate 205 opposite to the first substrate surface) through a Chemical Mechanical Polishing (CMP) process until the semiconductor substrate 205 with a desired thickness remains, in which process the temporary carrier substrate 600 supports the structure above it. In this embodiment, since the sensing pixel semiconductor transistor 251 does not have a portion extending in the semiconductor substrate 205, the required thickness of the semiconductor substrate 205 to be retained is 0, i.e., the semiconductor substrate 205 is entirely removed. It should be appreciated that in other embodiments of the present invention, when the semiconductor substrate 205 is thin and the sensing pixel semiconductor transistor 251 has a portion extending in the semiconductor substrate 205, the S1.5 step, i.e. the step of thinning the semiconductor substrate 205, may also be omitted.
S1.6, referring to fig. 6C, forming a second dielectric sub-layer 230 on a surface of the first dielectric sub-layer 210 facing the human eye visual incidence direction (i.e., a surface facing away from the temporary carrier substrate 600), and forming a plurality of regularly arranged fingerprint sensing end units 252 in the second dielectric sub-layer 230 through a series of suitable processes such as photolithography, etching, deposition, and the like, where the fingerprint sensing end units 252 are disposed in one-to-one correspondence with the sensing pixel semiconductor transistors 251, that is, one of the fingerprint sensing end units 252 is connected to a corresponding one of the sensing pixel semiconductor transistors 251 to form a corresponding one of active fingerprint sensing imaging pixels 250, and all the formed active fingerprint sensing imaging pixels 250 (i.e., M × N) are arranged in an array to form an active fingerprint sensing imaging array 201. The second dielectric sub-layer 230 is a transparent dielectric material, such as barium titanate, iron oxide, strontium titanate, or silicon nitride. The second dielectric sub-layer 230 has a stacked structure, and each of the fingerprint sensing terminal units 252 is located in a corresponding layer of the second dielectric sub-layer 230 and is buried by the rest of the layers. In other embodiments of the present invention, when the semiconductor substrate 205 still remains in step S1.5, the second dielectric sub-layer 230 is formed on a second substrate surface of the semiconductor substrate 205 opposite to the first substrate surface. Thus, based on the semiconductor dielectric composite sublayer 210, the first dielectric sublayer 220 and the second dielectric sublayer 230, a plurality of active fingerprint sensing imaging array sheets 200 are formed, each of the active fingerprint sensing imaging array sheets 200 includes an active fingerprint sensing imaging array 201 and its peripheral and input-output circuits 202 and M × N regularly arranged display illumination blocking sheets 259, an insulating medium sheet 212 is arranged between the active fingerprint sensing imaging array 201 and the periphery of the active fingerprint sensing imaging array and the input-output circuit 202, the active fingerprint sensing imaging array 201 comprises M × N active fingerprint sensing imaging pixels 250 arranged regularly, each of the active fingerprint sensing imaging pixels at least comprises a sensing pixel semiconductor transistor 251 and a fingerprint sensing end unit 252 connected thereto, a set of row interconnection wires 261 and a set of column interconnection wires 262. There is a cutting channel (not shown) between adjacent active fingerprint sensing imaging array sheets 200.
S1.7, referring to fig. 6D and 6E, first, a first adhesive layer 281 may be formed on the surface of the second dielectric sub-layer 230, where the first adhesive layer 281 on one hand protects the second dielectric sub-layer 230 from being damaged in the subsequent cutting process, and on the other hand, is also used for attaching the active fingerprint sensing imaging array sheet 200 obtained after cutting to the groove region 101 of the transparent dielectric cover sheet 100, and the material of the first adhesive layer 281 may include at least one of a passivation protection layer material and a binder material commonly used in the art, and the passivation protection layer material includes, but is not limited to, silicon dioxide (SiO)2) Silicon nitride (SiN), silicon oxynitride (SiON), fluorocarbon (CF), silicon oxycarbonitride (SiOC), or silicon carbonitride (SiCN), and the like, and adhesive materials including, but not limited to, an adhesive tape, various organic films using an organic polymer material or an ultraviolet-changeable organic material in combination with a spin-coating process and a photolithography process. Then, a V-shaped cutting blade or a laser oblique cutting method is used to cut the crystal grains from the side of the temporary carrier substrate 600 or from the side of the first adhesive layer 281 along the cutting path between the adjacent active fingerprint induction imaging array sheets 200, and each of the active fingerprint induction imaging array sheets 200 is completely separated, so as to obtain the active fingerprint induction imaging array sheet 200 still having the temporary carrier substrate 600. The thickness of the active fingerprint sensing imaging array sheet 200 is 0.1 to 850 micrometers, and the thickness of the sensing pixel semiconductor transistor 251 is 0.001 to 5 micrometers.
Referring to fig. 6E, in step S2, a transparent medium cover layer sheet 100 'is provided, the transparent medium cover layer sheet 100' has a transparent medium cover layer 100, and a groove area 101 is formed in the transparent medium cover layer 100. The transparent dielectric cover layer 100 may be any suitable transparent material known to those skilled in the art, such as silicon oxide, organic glass, sapphire, transparent plastic, etc., and the thickness of the transparent dielectric cover layer 100 is 0.01 mm to 1.00 mm. The groove region 101 is used for installing a required active fingerprint sensing imaging array sheet 200, and the groove depth of the groove region 101 is adapted to the thickness of the active fingerprint sensing imaging array sheet 200, for example, 0.1 to 850 micrometers.
Referring to fig. 6E and 6F, in step S3, first, the active fingerprint sensing imaging array sheet 200 is attached to the groove region 101 of the transparent medium cover sheet 100' through the first adhesive layer 281 of the active fingerprint sensing imaging array sheet 200; then, selecting a suitable process according to the properties of the second adhesive layer 700 to remove the temporary carrier substrate 600 and the second adhesive layer 700; then, filling a transparent adhesive 110 into the groove region 101, and curing the transparent adhesive so that the active fingerprint induction imaging array sheet 200 is fixedly embedded in the groove region 101; thereafter, the excess transparent adhesive on the surface of the transparent dielectric cover layer sheet 100 'is removed by a Chemical Mechanical Polishing (CMP) process or the like and the surface of the transparent dielectric cover layer sheet 100' is planarized to provide a flat process surface for subsequent processes. A fingerprint identification module 12 is thus obtained.
Referring to fig. 6G, in step S4, a photo-electric display layer 400 'is provided, the photo-electric display layer 400' has at least one photo-electric display layer 400, a display unit array 401 is formed in the photo-electric display layer 400, the display unit array 401 includes a plurality of regularly arranged display pixel units 450, each display pixel unit 450 may include a pixel electrode and a thin film transistor (not shown) for driving the pixel electrode to emit light, the material of the pixel electrode may include a material such as Indium Tin Oxide (ITO), and the material of the thin film transistor mainly includes a semiconductor such as silicon. Preferably, the planar dimensions (including shape and area) of each of the display pixel units 450 are the same as those of the active fingerprint sensing imaging pixels 250, so that when a finger touches the transparent medium covering layer 100, the display brightness of the display pixel units 450 under the finger can be locally enhanced, so as to obtain a clear fingerprint pattern on the finger.
With continued reference to fig. 6G, in step S5, at least one transparent touch location sensing layer 300 may be formed on the optoelectronic display layer 400' by a series of suitable semiconductor device manufacturing processes such as material deposition, photolithography, etching, etc., wherein most of the area of the transparent touch location sensing layer 300 may be configured to sense and locate external contacts (e.g., fingers, stylus, etc. contacting the transparent dielectric cover layer 100) on the transparent dielectric cover layer 100, and the areas of the transparent touch location sensing layer 300 include the area of the transparent touch location sensing layer 300 corresponding to the active fingerprint sensing imaging array sheet 200. The transparent touch positioning sensing layer 300 may include a structure such as a touch electrode formed by a grid-shaped metal trace. The transparent touch positioning sensing layer 300 and the photoelectric display layer 400 are insulated and isolated by an insulating medium layer 500, and the insulating medium layer 500 is made of a transparent material, such as silicon oxide. In other embodiments of the present invention, at least one transparent touch positioning sensing layer 300 may be bonded to the electro-optical display layer sheet 400' by an encapsulation process such as gluing, and the transparent touch positioning sensing layer 300 and the electro-optical display layer 400 are isolated from each other by an insulating medium layer 500 such as organic glass material or transparent adhesive. The edges of the transparent touch location sensitive layer 300 and the electro-optic display layer sheet 400' are now aligned. Further, a third adhesive layer 800 is formed on the transparent touch positioning sensing layer 300, and the third adhesive layer 800 may be an adhesive tape, various organic films made of organic polymer materials or ultraviolet-changeable organic materials by combining a spin coating process and a photolithography process, such as a Die Attach Film (DAF), a dry film (dry film), or a photoresist.
Referring to fig. 6H, in step S6, the transparent dielectric cover sheet 100' attached to the active fingerprint sensing imaging array sheet 200 is attached to the transparent touch positioning sensing layer 300 by a third adhesive layer 800.
Referring to fig. 6I, then, wire bonding and plastic package processing are performed as follows:
first, the edge of the photoelectric display layer sheet body 400 'is cut twice from the back side of the photoelectric display layer sheet body 400'. Wherein, one cutting cuts the two side edges of the photoelectric display layer sheet 400' at the same time, and the cutting depth reaches the surface of the active fingerprint sensing imaging array sheet 200, so as to expose the periphery of the active fingerprint sensing imaging array sheet 200 and the surface of the bonding pad of the input/output circuit 202; another cutting only cuts one side edge of the electro-optical display layer sheet 400' close to the active fingerprint sensing imaging array sheet 200, and the cutting depth reaches to the surface of the transparent touch location sensing layer 300, so as to expose the bonding pad surface of the transparent touch location sensing layer 300. The two cuts are not in sequence, and finally, the edge of the photoelectric display layer sheet body 400 'close to one side of the active fingerprint sensing imaging array sheet body 200 is shorter than the edge of the transparent touch positioning sensing layer 300 to form a step, and the other edge of the photoelectric display layer sheet body 400' is aligned with the other edge of the transparent touch positioning sensing layer 300.
Then, a first flexible connecting sheet 270 is welded on the periphery of the active fingerprint sensing imaging array sheet 200 and the bonding pads of the input/output circuits 202, and a second flexible connecting sheet 310 is welded on the bonding pads of the transparent touch positioning sensing layer 300, where the first flexible connecting sheet 270 has signal leads required by the active fingerprint sensing imaging array sheet 200, and the second flexible connecting sheet 310 has signal leads required by the transparent touch positioning sensing layer 300.
Next, an external support 900 is covered on the surface (i.e., the surface facing away from the incident direction 11 of human vision) of the electro-optical display layer body 400' including the first flexible connecting sheet 270 and the second flexible connecting sheet 310 by an injection molding process. As an example, the outer support 900 includes a thermosetting resin, which can soften or flow during the molding process, has plasticity, can be formed into a certain shape, and can be cross-linked and cured by a chemical reaction, and the outer support 900 may include at least one of a phenolic resin, a urea-formaldehyde resin, a melamine-formaldehyde resin, an epoxy resin, an unsaturated resin, a polyurethane, a polyimide, and other thermosetting resins, wherein the epoxy resin is preferably used as the outer support 900, wherein the epoxy resin may be an epoxy resin with or without a filler substance, and various additives (e.g., a curing agent, a modifier, a release agent, a thermal colorant, a flame retardant, and the like) are further included, for example, the phenolic resin is used as the curing agent, and solid particles (e.g., silicon micropowder) are used as the filler. The encapsulating layer 900 can bury the surface of the electro-optical display layer body 400' facing away from the incident direction 11 of human vision, provide a flat surface, and expose the ends of the first flexible connecting sheet 270 and the second flexible connecting sheet 310 led out. In other embodiments of the present invention, the outer supporter 900 may also be formed by a coating process or a chemical vapor deposition process, etc.
It should be appreciated that adaptation of the steps of the above embodiments, including deletion, addition, and order exchange, can also be used to implement the touch display device with embedded fingerprint recognition function of the present invention. For example, referring to fig. 6A to 6F, fig. 6I and fig. 7, in another embodiment of the present invention, after steps S1 to S3 are performed, a transparent touch location sensing layer body (not shown) may be provided, in which at least one transparent touch location sensing layer 300 is formed, and most of the area of the transparent touch location sensing layer 300 may be configured to sense and locate an external contact on the transparent medium covering layer 100; then, an optoelectronic display layer sheet 400 can be adhered to the transparent touch positioning sensing layer sheet by a transparent adhesive (i.e. an insulating medium layer 500), the optoelectronic display layer sheet 400 ' has at least one optoelectronic display layer 400, a display unit array 401 is formed in the optoelectronic display layer 400, the display unit array 401 includes a plurality of regularly arranged display pixel units 450, each display pixel unit 450 can include a pixel electrode and a thin film transistor (not shown) for driving the pixel electrode to emit light, or the insulating medium layer 500 is formed on the transparent touch positioning sensing layer sheet and at least one of the optoelectronic display layers 400 is formed on the insulating medium layer 500 by directly using a manufacturing process of the pixel array, so as to obtain the optoelectronic display layer sheet 400 ', at this time, one side of the optoelectronic display layer sheet 400 ' is retracted relative to the edge of the transparent touch positioning sensing layer sheet having the transparent touch positioning sensing layer 300 That is, one side edge of the photoelectric display layer sheet 400 ' is shorter than the edge of the transparent touch-positioning sensing layer sheet to form a step to expose the bonding pad surface of the transparent touch-positioning sensing layer 300, the other side edge of the photoelectric display layer sheet 400 ' can be aligned with the other side edge of the transparent touch-positioning sensing layer sheet, and the size of the stacked structure of the photoelectric display layer sheet 400 ' and the transparent touch-positioning sensing layer sheet is smaller than the size of the fingerprint identification module 12; next, a third adhesive layer 800 is formed on a surface of the fingerprint identification module 12 facing away from the human eye visual incident direction 11, and a surface of the transparent touch positioning sensing layer 300 facing away from the photoelectric display layer sheet 400 'is attached to the fingerprint identification module 12 through the third adhesive layer 800 (i.e., the transparent medium cover layer sheet 100' is attached to a surface of the active fingerprint sensing imaging array sheet 200), and a stacked structure of the photoelectric display layer sheet 400 'and the transparent touch positioning sensing layer sheet is retracted inward relative to the transparent medium cover layer sheet 100' to expose the periphery of the active fingerprint sensing imaging array sheet 200 and the surface of the bonding pad of the input/output circuit 202; then, a first flexible connecting sheet 270 is welded on the periphery of the active fingerprint sensing imaging array sheet 200 and the bonding pads of the input/output circuit 202, and a second flexible connecting sheet 310 is welded on the bonding pads of the transparent touch positioning sensing layer 300, where the first flexible connecting sheet 270 has signal leads required by the active fingerprint sensing imaging array sheet 200, and the second flexible connecting sheet 310 has signal leads required by the transparent touch positioning sensing layer 300. Next, an external support 900 is covered on the surface (i.e., the surface facing away from the incident direction 11 of human vision) of the electro-optical display layer body 400' including the first flexible connecting sheet 270 and the second flexible connecting sheet 310 by an injection molding process.
In summary, the method for manufacturing a touch display device with embedded fingerprint identification function of the present invention includes attaching an active fingerprint sensing imaging array sheet with a high transparency and high sensitivity to a groove region of a transparent dielectric cover sheet, and attaching the transparent dielectric cover sheet to a photoelectric display layer sheet with a transparent touch positioning sensing layer.
Although the present invention has been described with reference to the preferred embodiments, it is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.

Claims (24)

1. A fingerprint identification function-embedded touch display device (10), wherein along an incident direction (11) of human vision, the fingerprint identification function-embedded touch display device (10) comprises in layers:
a transparent media cover layer (100), a recessed area (101) formed in the transparent media cover layer (100), an active fingerprint sensing imaging array sheet (200) embedded in the recessed area (101), an active fingerprint sensing imaging array (201) formed in the active fingerprint sensing imaging array sheet (200), the active fingerprint sensing imaging array (201) comprising a plurality of active fingerprint sensing imaging pixels (250), each of the active fingerprint sensing imaging pixels comprising at least one sensor pixel semiconductor transistor (251);
at least one transparent touch location sensing layer (300), the transparent touch location sensing layer (300) configured to sense and locate external contacts on the transparent media overlay; and the number of the first and second groups,
at least one electro-optic display layer (400), a display cell array (401) formed in the electro-optic display layer (400), the display cell array (401) comprising a plurality of display pixel cells (450).
2. The touch display device with embedded fingerprint recognition function of claim 1, wherein along the human eye visual incidence direction, the active fingerprint sensing imaging array sheet (200) comprises in layers:
a semiconductor dielectric composite sublayer (210); and the number of the first and second groups,
a first dielectric sublayer (220);
wherein the sensing pixel semiconductor transistor (251) is disposed between the semiconductor dielectric composite sublayer (210) and the first dielectric sublayer (220).
3. The touch display device with embedded fingerprint recognition function of claim 2, wherein the semiconductor dielectric composite sub-layer (210) comprises a plurality of insulating dielectric sheets (212).
4. The touch display device with embedded fingerprint recognition function of claim 2, wherein the active fingerprint sensing imaging array sheet (200) further comprises:
and the second dielectric sublayer (230) is arranged on one side, facing the incidence direction of the human eye vision, of the semiconductor dielectric composite sublayer (210) and is opposite to the first dielectric sublayer (220).
5. The touch display device with embedded fingerprint recognition function of claim 4, wherein the active fingerprint sensing imaging pixel (250) further comprises:
at least one fingerprint sensing head unit (252) disposed in the second dielectric sub-layer (230) and electrically connected to the sensing pixel semiconductor transistor (251).
6. The touch display device with embedded fingerprint identification function of claim 5, wherein said fingerprint sensing head unit (252) is a capacitance sensing unit generating sensing capacitance to external contact on said transparent medium covering layer; or; the fingerprint sensing end head unit (252) is an acoustic wave sensing unit which generates acoustic wave sensing to the external contact on the transparent medium covering layer; or the fingerprint sensing end head unit (252) is an electromagnetic wave sensing unit which generates electromagnetic wave sensing to the external contact on the transparent medium covering layer; or the fingerprint sensing end head unit (252) is a micro-pressure sensing unit which generates micro-pressure sensing to the external contact on the transparent medium covering layer.
7. The touch display device with embedded fingerprint recognition function of claim 4, wherein the sensing pixel semiconductor transistor (251) is disposed between the semiconductor dielectric composite sub-layer (210) and the second dielectric sub-layer (230).
8. The touch display device with embedded fingerprint recognition function of claim 1, wherein the active fingerprint sensing imaging array sheet (200) further comprises:
a plurality of sets of row interconnection conductors (261); and the number of the first and second groups,
a plurality of sets of column interconnect conductors (262);
wherein each of said sensing pixel semiconductor transistors (251) is electrically connected to a corresponding set of said row interconnection conductors (261) and a set of said column interconnection conductors (262).
9. The touch display device with embedded fingerprint recognition function of claim 4, wherein a plurality of display illumination blocking sheets (259) are formed in the first dielectric sub-layer (220), and each display illumination blocking sheet (259) is vertically aligned with the corresponding sensing pixel semiconductor transistor (251) along the human eye visual incidence direction (11).
10. The touch display device with embedded fingerprint recognition function of claim 1, wherein the display pixel unit (450) and the active fingerprint sensing imaging pixel (250) have the same plane size.
11. The touch display device with embedded fingerprint identification function of claim 1, wherein the thickness of the transparent medium covering layer (100) is 0.01 mm to 1 mm, the thickness of the active fingerprint sensing imaging array sheet body (200) is 0.1 micron to 850 microns, and the thickness of the sensing pixel semiconductor transistor (251) is 0.001 micron to 5 microns.
12. The touch display device with embedded fingerprint recognition function of claim 1, wherein the material of the transparent dielectric covering layer (100) comprises at least one of silicon oxide, glass and transparent plastic, and the sensor pixel semiconductor transistor (251) is mainly composed of a semiconductor material.
13. A preparation method of a touch display device with an embedded fingerprint identification function is characterized by comprising the following steps:
providing an active fingerprint sensing imaging array sheet (200), said active fingerprint sensing imaging array sheet (200) having an active fingerprint sensing imaging array (201) formed therein, said active fingerprint sensing imaging array (201) comprising a plurality of active fingerprint sensing imaging pixels (250), each of said active fingerprint sensing imaging pixels comprising at least one sensing pixel semiconductor transistor (251);
providing a transparent medium cover layer sheet body (100 '), wherein the transparent medium cover layer sheet body (100') is provided with a transparent medium cover layer (100), and a groove area (101) is formed in the transparent medium cover layer (100);
attaching the active fingerprint sensing imaging array sheet (200) within a groove region (101) of the transparent media cover layer sheet (100');
providing an electro-optic display layer sheet (400 '), the electro-optic display layer sheet (400') having at least one electro-optic display layer (400), the electro-optic display layer (400) having an array of display cells (401) formed therein, the array of display cells (401) comprising a plurality of display pixel units (450), at least one transparent touch location sensing layer (300) formed on the electro-optic display layer sheet (400 '), the transparent touch location sensing layer (300) configured to sense and locate external contacts on the transparent dielectric cover layer sheet (100'); and the number of the first and second groups,
attaching a transparent dielectric cover sheet (100') attached over the active fingerprint sensing imaging array sheet (200) over the transparent touch location sensitive layer (300).
14. The method of manufacturing of claim 13, wherein the step of providing one active fingerprint sensing imaging array sheet (200) comprises:
providing a semiconductor substrate (205);
forming a plurality of said active fingerprint sensing imaging array sheets (200) on said semiconductor substrate (205);
dicing the semiconductor substrate (205) to separate individual active fingerprint induction imaging array sheets (200).
15. The method of manufacturing of claim 14, wherein the step of forming a plurality of said active fingerprint sensing imaging array sheets (200) on said semiconductor substrate (205) comprises:
forming a semiconductor dielectric composite sublayer (210) on a first substrate side of the semiconductor substrate (205);
forming a first dielectric sub-layer (220) on the semiconductor dielectric composite sub-layer (210); and the number of the first and second groups,
forming said plurality of sensing pixel semiconductor transistors (251) between said semiconductor dielectric composite sub-layer (210) and said first dielectric sub-layer (220).
16. The method of manufacturing of claim 15, wherein the step of forming a plurality of said active fingerprint sensing imaging array sheets (200) on said semiconductor substrate (205) further comprises:
forming a plurality of sets of row interconnect conductors (261) and a plurality of sets of column interconnect conductors (262) in said first dielectric sublayer (220);
wherein each of said sensing pixel semiconductor transistors (251) is electrically connected to a corresponding set of said row interconnection conductors (261) and a set of said column interconnection conductors (262).
17. The method of manufacturing of claim 15, wherein the step of forming a plurality of said active fingerprint sensing imaging array sheets (200) on said semiconductor substrate (205) further comprises:
forming a plurality of display illumination blocking sheets (259) in the first dielectric sub-layer (220), each of the display illumination blocking sheets (259) being optically vertically aligned with a corresponding one of the sense pixel semiconductor transistors (251).
18. The method of manufacturing of claim 15, wherein the step of forming a plurality of active fingerprint sensing imaging array sheets (200) on the semiconductor substrate further comprises:
forming a second dielectric sub-layer (230) on a second substrate side of the semiconductor substrate (205) opposite the first substrate side; and the number of the first and second groups,
a plurality of fingerprint sensing end units (252) are formed in the second dielectric sub-layer (230), and each fingerprint sensing end unit (252) is connected with the corresponding sensing pixel semiconductor transistor (251) to form an active fingerprint sensing imaging array (201) comprising a plurality of active fingerprint sensing imaging pixels (250) arranged in an array.
19. The method of manufacturing of claim 18, wherein the step of forming a plurality of active fingerprint sensing imaging array sheets (200) on the semiconductor substrate further comprises:
thinning the semiconductor substrate (205) from a second substrate face of the semiconductor substrate (205) opposite to the first substrate face to leave a partial thickness of the semiconductor substrate (205) or removing the semiconductor substrate (205) before forming the second dielectric sub-layer (230) on the second substrate face.
20. A method of manufacturing according to claim 19, wherein a temporary carrier substrate (600) is provided before thinning the semiconductor substrate (205) from the second substrate side, and the first substrate side with the first dielectric sub-layer (220) is attached to the temporary carrier substrate (600).
21. A method for manufacturing according to claim 20, wherein, when cutting said semiconductor substrate (205), it is cut together with said temporary carrier substrate (600) to separate each of said active fingerprint sensing imaging array sheets (200).
22. The method of manufacturing of claim 21, wherein the step of affixing the active fingerprint sensing imaging array sheet (200) within the recessed area (101) of the transparent media cover sheet (100') further comprises:
affixing the second dielectric sub-layer (203) side of the active fingerprint sensing imaging array sheet (200) with the temporary carrier substrate (600) within a recessed area (101) of the transparent dielectric cover sheet (100');
removing the temporary carrier substrate (600) on the active fingerprint induction imaging array sheet (200);
filling a transparent adhesive (110) into the groove region; and the number of the first and second groups,
planarizing the surface of the transparent media cover layer sheet (100') having the active fingerprint induction imaging array sheet (200).
23. The method of manufacturing of claim 13, wherein after attaching a transparent dielectric cover sheet (100') attached to the active fingerprint sensing imaging array sheet (200) over the transparent touch location sensing layer (300), the method of manufacturing further comprises:
welding a first flexible connecting sheet (270) on the active fingerprint induction imaging array sheet (200), and,
welding a second flexible connecting sheet (310) on the transparent touch positioning sensing layer (300).
24. A method of using the fingerprint recognition function embedded touch display device of any one of claims 1 to 12, comprising:
locally enhancing display brightness of an array of display cells (401) in the electro-optic display layer (400) corresponding to display pixel cells (450) in the area of the active fingerprint sensing imaging array sheet (200) or finger contact area.
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