CN111341857A - 太阳能电池片的制备方法 - Google Patents

太阳能电池片的制备方法 Download PDF

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CN111341857A
CN111341857A CN202010170396.XA CN202010170396A CN111341857A CN 111341857 A CN111341857 A CN 111341857A CN 202010170396 A CN202010170396 A CN 202010170396A CN 111341857 A CN111341857 A CN 111341857A
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monocrystalline silicon
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CN111341857B (zh
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孟祥熙
曹育红
杨立功
符黎明
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Changzhou Shichuang Energy Co Ltd
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    • HELECTRICITY
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    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/0236Special surface textures
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    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract

本发明公开了一种太阳能电池片的制备方法,采用正面为非100晶向的单晶硅片制备电池片,且通过制绒制得正面具有棱锥绒面结构的电池片;棱锥顶点在该棱锥底面所在平面上的投影,位于该棱锥底面中心的一侧;且电池片上各棱锥的顶点朝向相同。与现有采用正四棱锥绒面结构的电池片相比,本发明电池片的反射率更低。

Description

太阳能电池片的制备方法
技术领域
本发明涉及光伏领域,具体涉及一种太阳能电池片的制备方法。
背景技术
硅片表面的反射率是影响太阳能电池效率的重要因素,为了降低硅片表面的反射率,需要在硅片表面制备绒面结构,常见的是金字塔结构,即正四棱锥结构。
现有的正四棱锥绒面结构可以降低硅片表面的反射率,但还需要进一步优化绒面结构,以便进一步降低硅片表面的反射率。
发明内容
为了进一步降低硅片表面的反射率,本发明提供一种太阳能电池片的制备方法,采用正面为非100晶向的单晶硅片制备电池片,且通过制绒制得正面具有棱锥绒面结构的电池片;棱锥顶点在该棱锥底面所在平面上的投影,位于该棱锥底面中心的一侧;且电池片上各棱锥的顶点朝向相同。
优选的,棱锥顶点在该棱锥底面所在平面上的投影,位于该棱锥底面的外侧;且电池片上各棱锥的顶点朝向相同。且棱锥优选为四棱锥,该四棱锥包括底面和四个侧面,底面为长方形或正方形,有一个侧面与底面的夹角为钝角,该钝角优选为不大于110度。
在电池片放置状态相同、且太阳光入射角度相同的情况下,本发明棱锥绒面结构对太阳光的反射次数可多于现有正四棱锥绒面结构对太阳光的反射次数,故与现有采用正四棱锥绒面结构的电池片相比,本发明电池片的反射率更低。
优选的,所述正面为非100晶向的单晶硅片,其由100晶向的单晶硅棒切片制得,且切片的方向与单晶硅棒的轴心存在非90度的夹角。
优选的,所述正面为非100晶向的单晶硅片,其由非100晶向的单晶硅棒切片制得,且切片的方向与单晶硅棒的轴心垂直。
本发明采用的正面为非100晶向的单晶硅片,既可以由100晶向的单晶硅棒切片制得,又可以由非100晶向的单晶硅棒切片制得,比较便捷。
优选的,所述正面为非100晶向的单晶硅片,包括:正面为110晶向或111晶向的单晶硅片。
本发明采用的正面为非100晶向的单晶硅片,可以是正面为110晶向的单晶硅片,也可以是正面为111晶向的单晶硅片,还可以是其它正面为非100晶向的单晶硅片,选择面广。
附图说明
图1是电池片都平置时的示意图;
图2是电池片都竖置时的示意图;
图3是电池片都斜置时的示意图。
具体实施方式
下面结合附图和实施例,对本发明的具体实施方式作进一步描述。以下实施例仅用于更加清楚地说明本发明的技术方案,而不能以此来限制本发明的保护范围。
为了进一步降低硅片表面的反射率,本发明提供一种太阳能电池片的制备方法,采用正面为非100晶向的单晶硅片制备电池片,且通过制绒制得正面具有棱锥绒面结构的电池片;棱锥顶点在该棱锥底面所在平面上的投影,位于该棱锥底面的外侧;且电池片上各棱锥的顶点朝向相同。所述棱锥优选为四棱锥,该四棱锥包括底面和四个侧面,底面为长方形或正方形,有一个侧面与底面的夹角为钝角,该钝角优选为不大于110度。所述正面为非100晶向的单晶硅片,包括:正面为110晶向或111晶向的单晶硅片。
如图1所示,在电池片都平置、且太阳光入射角度相同的情况下,本发明棱锥绒面结构对太阳光的反射次数可多于现有正四棱锥绒面结构对太阳光的反射次数;
如图2所示,在电池片都竖置、且太阳光入射角度相同的情况下,本发明棱锥绒面结构对太阳光的反射次数可多于现有正四棱锥绒面结构对太阳光的反射次数;
如图3所示,在电池片都斜置、且太阳光入射角度相同的情况下,本发明棱锥绒面结构对太阳光的反射次数可多于现有正四棱锥绒面结构对太阳光的反射次数;
综上可知,在电池片放置状态相同、且太阳光入射角度相同的情况下,本发明棱锥绒面结构对太阳光的反射次数可多于现有正四棱锥绒面结构对太阳光的反射次数,故与现有采用正四棱锥绒面结构的电池片相比,本发明电池片的反射率更低。
本发明采用的正面为非100晶向的单晶硅片,可以是正面为110晶向的单晶硅片,也可以是正面为111晶向的单晶硅片,还可以是其它正面为非100晶向的单晶硅片,选择面广。
本发明采用的正面为非100晶向的单晶硅片,可以由100晶向的单晶硅棒切片制得,且切片的方向与单晶硅棒的轴心存在非90度的夹角。
本发明采用的正面为非100晶向的单晶硅片,还可以由非100晶向的单晶硅棒切片制得,且切片的方向与单晶硅棒的轴心垂直。
本发明采用的正面为非100晶向的单晶硅片,既可以由100晶向的单晶硅棒切片制得,又可以由非100晶向的单晶硅棒切片制得,比较便捷。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明技术原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。

Claims (8)

1.太阳能电池片的制备方法,其特征在于,采用正面为非100晶向的单晶硅片制备电池片,且通过制绒制得正面具有棱锥绒面结构的电池片;棱锥顶点在该棱锥底面所在平面上的投影,位于该棱锥底面中心的一侧;且电池片上各棱锥的顶点朝向相同。
2.根据权利要求1所述的太阳能电池片的制备方法,其特征在于,棱锥顶点在该棱锥底面所在平面上的投影,位于该棱锥底面的外侧。
3.根据权利要求1或2所述的太阳能电池片的制备方法,其特征在于,所述棱锥为四棱锥,包括底面和四个侧面。
4.根据权利要求3所述的太阳能电池片的制备方法,其特征在于,所述四棱锥的底面为长方形或正方形。
5.根据权利要求3所述的太阳能电池片的制备方法,其特征在于,所述四棱锥有一个侧面与底面的夹角为钝角,该钝角不大于110度。
6.根据权利要求1或2所述的太阳能电池片的制备方法,其特征在于,所述正面为非100晶向的单晶硅片,其由100晶向的单晶硅棒切片制得,且切片的方向与单晶硅棒的轴心存在非90度的夹角。
7.根据权利要求1或2所述的太阳能电池片的制备方法,其特征在于,所述正面为非100晶向的单晶硅片,其由非100晶向的单晶硅棒切片制得,且切片的方向与单晶硅棒的轴心垂直。
8.根据权利要求1或2所述的太阳能电池片的制备方法,其特征在于,所述正面为非100晶向的单晶硅片,包括:正面为110晶向或111晶向的单晶硅片。
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101654810A (zh) * 2009-09-18 2010-02-24 华东师范大学 在硅片上制备抗反射层的方法
CN102277574A (zh) * 2011-08-15 2011-12-14 英利能源(中国)有限公司 单晶硅太阳电池及其的腐蚀液、制绒方法和制备方法和光伏组件
CN106684173A (zh) * 2015-11-10 2017-05-17 财团法人工业技术研究院 双面光电转换元件
CN108346708A (zh) * 2018-03-14 2018-07-31 宇泰(江西)新能源有限公司 一种单晶硅光伏电池表面织构结构及其制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101654810A (zh) * 2009-09-18 2010-02-24 华东师范大学 在硅片上制备抗反射层的方法
CN102277574A (zh) * 2011-08-15 2011-12-14 英利能源(中国)有限公司 单晶硅太阳电池及其的腐蚀液、制绒方法和制备方法和光伏组件
CN106684173A (zh) * 2015-11-10 2017-05-17 财团法人工业技术研究院 双面光电转换元件
CN108346708A (zh) * 2018-03-14 2018-07-31 宇泰(江西)新能源有限公司 一种单晶硅光伏电池表面织构结构及其制备方法

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