CN111341836A - Graphene interlayer flexible substrate for heteroepitaxy and preparation method thereof - Google Patents

Graphene interlayer flexible substrate for heteroepitaxy and preparation method thereof Download PDF

Info

Publication number
CN111341836A
CN111341836A CN202010146464.9A CN202010146464A CN111341836A CN 111341836 A CN111341836 A CN 111341836A CN 202010146464 A CN202010146464 A CN 202010146464A CN 111341836 A CN111341836 A CN 111341836A
Authority
CN
China
Prior art keywords
buffer layer
graphene
flexible substrate
heteroepitaxy
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202010146464.9A
Other languages
Chinese (zh)
Other versions
CN111341836B (en
Inventor
霍晓迪
金鹏
王占国
杜鹏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tianjin Hijet Fence Supplies Co ltd
Institute of Semiconductors of CAS
Original Assignee
Tianjin Hijet Fence Supplies Co ltd
Institute of Semiconductors of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tianjin Hijet Fence Supplies Co ltd, Institute of Semiconductors of CAS filed Critical Tianjin Hijet Fence Supplies Co ltd
Priority to CN202010146464.9A priority Critical patent/CN111341836B/en
Publication of CN111341836A publication Critical patent/CN111341836A/en
Application granted granted Critical
Publication of CN111341836B publication Critical patent/CN111341836B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

The utility model provides a graphite alkene intermediate level flexible substrate for heteroepitaxy and preparation method thereof, its graphite alkene intermediate level flexible substrate for heteroepitaxy includes in order from bottom to top: supporting layer and buffer layer, the buffer layer includes from bottom to top in order: at least one graphene buffer layer and at least one metal film buffer layer. This is disclosed through the buffer layer structure that uses graphite alkene buffer layer and metal film buffer layer to make up, and the advantage that rational utilization graphite alkene lattice adaptation is little can avoid graphite alkene to be carved by in the preparation process simultaneously under the protection of metal film buffer layer, is favorable to improving single crystal diamond heteroepitaxy's quality to realize the high-quality diamond film layer heteroepitaxy growth of large tracts of land.

Description

Graphene interlayer flexible substrate for heteroepitaxy and preparation method thereof
Technical Field
The disclosure relates to the field of semiconductor material preparation, in particular to a graphene interlayer flexible substrate for heteroepitaxy and a preparation method thereof.
Background
Diamond as the third-generation semiconductor material has the advantages of large forbidden band width, high thermal conductivity, high electron saturation drift velocity, good thermal stability and chemical stability, radiation resistance, corrosion resistance and the like, and is the third-generation semiconductor material with the most development prospect at present. As a semiconductor material, diamond can be used as a heat sink, a high-temperature high-pressure high-frequency field effect diode, an ultraviolet detector, a radiation detector and the like.
Polycrystalline diamond is often used as an auxiliary application for heat sink, packaging, etc., and single crystal diamond has a wider application in the aspect of semiconductor device formation. The small-area diamond epitaxial film is narrow in application, and only large-area high-quality single crystal diamond can be widely used, so that the large-area high-quality single crystal diamond epitaxial film meets the requirements of semiconductor materials on scale, integration and standardization. Therefore, the large-area high-quality single crystal diamond has strong market demand and application potential.
The microwave plasma chemical vapor deposition has the following advantages: (1) no internal electrode avoids pollution caused by the electrode; (2) the working parameters can be conveniently controlled; (3) wide working gas pressure, high plasma density and high energy conversion rate, and is considered as the best method for obtaining the device-grade single crystal diamond material, and the diamond can be grown on a homogeneous substrate or a heterogeneous substrate. Homoepitaxy is limited by the size of the diamond substrate and epitaxy is costly. Therefore, heteroepitaxy using a large-area substrate is an optimal way to produce large-area high-quality single crystal diamond, and thus has received increasing attention.
Several achievements in heteroepitaxial growth have been made today, particularly on Ir substrates. Heteroepitaxy is still of lower quality compared to homoepitaxial single crystals, the most significant problem being lattice matching. The lattice mismatch ratio of diamond and graphene is only 2.6%, so that graphene is very suitable to be used as a heteroepitaxial substrate of single-crystal diamond.
From the above description, it is speculated that microwave plasma chemical vapor deposition may be used to directly epitaxially grow diamond on graphene, but there is less concern with the related art. The reason is that graphene exposed in a plasma environment is very easy to etch away, a graphene phase can exist only under specific MPCVD working conditions, but graphene defects are greatly increased due to the bombardment effect of plasma. Therefore, diamond single crystals are difficult to grow on graphene by using microwave plasma chemical vapor deposition, and the original intention of introducing graphene layers is deviated.
Disclosure of Invention
Technical problem to be solved
The present disclosure provides a graphene interlayer flexible substrate for heteroepitaxy and a method for preparing the same to at least partially solve the technical problems set forth above.
(II) technical scheme
According to an aspect of the present disclosure, there is provided a graphene interlayer flexible substrate for heteroepitaxy, comprising in order from bottom to top: supporting layer and buffer layer, the buffer layer includes from bottom to top in order: at least one graphene buffer layer and at least one metal film buffer layer.
In some embodiments of the present disclosure, the graphene buffer layer has a thickness of 1 to 50 atomic layers.
In some embodiments of the present disclosure, the metal film buffer layer has a thickness of 2 to 100 nm.
In some embodiments of the present disclosure, the material of the metal film buffer layer is one or more of Pt, Ir, and Cu.
In some embodiments of the present disclosure, the material of the support layer is a simple substance material or a composite material of any multiple of silicon carbide, silicon, sapphire, quartz, glass, and metal.
According to an aspect of the present disclosure, there is also provided a method for preparing a graphene interlayer flexible substrate for heteroepitaxy as described above, including the steps of:
s1, carrying out surface treatment on the supporting layer to remove organic and inorganic chemical pollutants on the surface of the supporting layer;
s2, placing the support layer subjected to surface treatment in the step S1 in a reaction chamber, wherein the gas atmosphere is one or more of argon and hydrogen, the temperature range is 1500-1700 ℃, the gas pressure range in the reaction chamber is 1-700Torr, and a graphene buffer layer is prepared on the upper surface of the support layer;
and S3, preparing a metal film buffer layer on the graphene buffer layer prepared in the step S2 by utilizing magnetron sputtering.
In some embodiments of the present disclosure, the step S1 selects to perform surface treatment on the support layer by using standard RCA cleaning.
In some embodiments of the present disclosure, the growth time of the support layer in the reaction chamber in the step S2 is 5-120 min.
(III) advantageous effects
According to the technical scheme, the graphene interlayer flexible substrate for heteroepitaxy and the preparation method thereof have at least one or part of the following beneficial effects:
this setting of graphite alkene buffer layer and metal film buffer layer, the little advantage of rational utilization graphite alkene lattice adaptation can avoid graphite alkene to be carved by in the preparation process simultaneously under the protection of metal film buffer layer, is favorable to improving single crystal diamond heteroepitaxy's quality to utilize heteroepitaxy to obtain extensive epitaxial rete.
Drawings
Fig. 1 is a schematic structural diagram of a graphene interlayer flexible substrate for heteroepitaxy according to an embodiment of the present disclosure.
Fig. 2 is a flow chart of a method for preparing a graphene interlayer flexible substrate for heteroepitaxy according to an embodiment of the present disclosure.
[ description of main reference numerals in the drawings ] of the embodiments of the present disclosure
10-a support layer;
20-a buffer layer;
21-a graphene buffer layer;
22-metal film buffer layer;
S1-S3-step.
Detailed Description
The utility model provides a graphite alkene intermediate level flexible substrate for heteroepitaxy and preparation method thereof, its graphite alkene intermediate level flexible substrate for heteroepitaxy includes in order from bottom to top: supporting layer and buffer layer, the buffer layer includes from bottom to top in order: at least one graphene buffer layer and at least one metal film buffer layer. This setting of graphite alkene buffer layer and metal film buffer layer, the little advantage of rational utilization graphite alkene lattice adaptation can avoid graphite alkene to be carved by in the preparation process simultaneously under the protection of metal film buffer layer, is favorable to improving single crystal diamond heteroepitaxy's quality to utilize heteroepitaxy to obtain extensive epitaxial rete.
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
Certain embodiments of the present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments of the disclosure are shown. Indeed, various embodiments of the disclosure may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will satisfy applicable legal requirements.
In one exemplary embodiment of the present disclosure, a graphene interlayer flexible substrate for heteroepitaxy is provided. Fig. 1 is a schematic structural diagram of a graphene interlayer flexible substrate for heteroepitaxy according to an embodiment of the present disclosure. As shown in fig. 1, the graphene interlayer flexible substrate for heteroepitaxy of the present disclosure includes, from bottom to top: the support layer 10 and the buffer layer 20, the buffer layer 20 includes from bottom to top: at least one graphene buffer layer 21 and at least one metal film buffer layer 22.
The following describes each component of the graphene interlayer flexible substrate for heteroepitaxy in detail.
The material of the support layer 10 may be a simple substance material of any one of silicon carbide, silicon, sapphire, quartz, glass and metal, or may be a composite material of any more of silicon carbide, silicon, sapphire, quartz, glass and metal.
Graphene buffer layer 21, graphene buffer layer 21's thickness is 1 ~ 50 atomic layers.
The metal film buffer layer 22, the thickness of the metal film buffer layer 22 is 2-100 nm. The material of the metal film buffer layer 22 is one or more of Pt, Ir, and Cu.
In another exemplary embodiment of the present disclosure, there is also provided a method of preparing a graphene interlayer flexible substrate for heteroepitaxy. Fig. 2 is a flow chart of a method for preparing a graphene interlayer flexible substrate for heteroepitaxy according to an embodiment of the present disclosure. As shown in fig. 2, the method for preparing a graphene interlayer flexible substrate for heteroepitaxy according to the present disclosure includes:
and step S1, carrying out surface treatment on the support layer to remove organic and inorganic chemical pollutants on the surface of the support layer.
And S2, placing the support layer subjected to surface treatment in the step S1 in a reaction chamber, wherein the gas atmosphere is one or more of argon and hydrogen, the temperature range is 1500-1700 ℃, the pressure range in the reaction chamber is 1-700Torr, the growth time is 5-120min, and a graphene buffer layer is prepared on the upper surface of the support layer. For further explanation on the upper surface of the supporting layer, the upper surface of the supporting layer may be C-plane, Si-plane or other suitable structures.
And S3, preparing a metal film buffer layer on the graphene buffer layer prepared in the S2 by utilizing magnetron sputtering.
In one embodiment, a graphene buffer layer is formed on a 4H-SiC support layer, and a Pt metal film buffer layer is plated on the graphene buffer layer. The details are as follows:
and step S1, standard RCA cleaning is carried out on the polished 4H-SiC supporting layer, and organic and inorganic chemical pollutants on the surface of the 4H-SiC supporting layer sample are removed.
And step S2, preparing a graphene buffer layer on the C surface of the 4H-SiC supporting layer by using a pyrolysis method. And placing the 4H-SiC supporting layer subjected to surface treatment in a reaction chamber, wherein pure argon is selected as the gas atmosphere. Generally speaking, the optimal temperature range is 1500-1700 ℃, the pressure range in the reaction chamber is 1-700Torr, in this embodiment, the growth temperature of the graphene buffer layer is 1650 ℃, and the pressure is 40 Torr. And growing for 30min under the condition to obtain the graphene buffer layer with the thickness of 2 atomic layers. It should be understood by those skilled in the art that if more layers of graphene buffer layers are required, the growth time can be prolonged or the growth temperature can be increased, and generally the optimal thickness of the graphene buffer layer is 1-50 atomic layers, and those skilled in the art should understand that the thickness of the graphene buffer layer is about 0.35-20 nm.
Step S3, plating a Pt metal film buffer layer on the graphene buffer layer prepared in step S2 by magnetron sputtering, wherein the thickness of the metal film buffer layer is 2-100 nm, and in principle, the thinner the film layer is, the better the film layer thickness is, and the thickness of the metal film buffer layer is preferably 20nm in this embodiment.
So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Further, the above definitions of the various elements and methods are not limited to the various specific structures, shapes or arrangements of parts mentioned in the examples, which may be easily modified or substituted by those of ordinary skill in the art.
From the above description, those skilled in the art should have clear recognition of the graphene interlayer flexible substrate for heteroepitaxy and the preparation method thereof of the present disclosure.
In summary, the graphene interlayer flexible substrate for heteroepitaxy and the preparation method thereof provided by the disclosure utilize the buffer layer structure formed by combining the graphene buffer layer and the metal film buffer layer, reasonably utilize the advantage of small lattice adaptation of graphene, and can avoid the graphene from being etched in the preparation process under the protection of the metal film buffer layer, thereby being beneficial to improving the quality of single crystal diamond heteroepitaxy to realize the heteroepitaxy growth of a large-area and high-quality diamond film layer.
It should also be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure.
And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Unless otherwise indicated, the numerical parameters set forth in the specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by the present disclosure. In particular, all numbers expressing quantities of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term "about". Generally, the expression is meant to encompass variations of ± 10% in some embodiments, 5% in some embodiments, 1% in some embodiments, 0.5% in some embodiments by the specified amount.
Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
In addition, unless steps are specifically described or must occur in sequence, the order of the steps is not limited to that listed above and may be changed or rearranged as desired by the desired design. The embodiments described above may be mixed and matched with each other or with other embodiments based on design and reliability considerations, i.e., technical features in different embodiments may be freely combined to form further embodiments.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that is, the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.

Claims (8)

1. A graphene interlayer flexible substrate for heteroepitaxy, comprising in order from bottom to top: supporting layer and buffer layer, the buffer layer includes from bottom to top in order: at least one graphene buffer layer and at least one metal film buffer layer.
2. The graphene interlayer flexible substrate according to claim 1, wherein the graphene buffer layer has a thickness of 1 to 50 atomic layers.
3. The graphene interlayer flexible substrate according to claim 1, wherein the metal film buffer layer has a thickness of 2 to 100 nm.
4. The graphene interlayer flexible substrate according to claim 1, wherein the metal film buffer layer is made of one or more of Pt, Ir and Cu.
5. The graphene interlayer flexible substrate according to claim 1, wherein the material of the support layer is a simple substance material or a composite material of any more of silicon carbide, silicon, sapphire, quartz, glass and metal.
6. A method of preparing a graphene interlayer flexible substrate for heteroepitaxy as claimed in claims 1 to 5, comprising the steps of:
s1, carrying out surface treatment on the supporting layer to remove organic and inorganic chemical pollutants on the surface of the supporting layer;
s2, placing the support layer subjected to surface treatment in the step S1 in a reaction chamber, wherein the gas atmosphere is one or more of argon and hydrogen, the temperature range is 1500-1700 ℃, the gas pressure range in the reaction chamber is 1-700Torr, and a graphene buffer layer is prepared on the upper surface of the support layer;
and S3, preparing a metal film buffer layer on the graphene buffer layer prepared in the step S2 by utilizing magnetron sputtering.
7. The method for preparing a porous membrane according to claim 6, wherein the support layer is surface-treated by standard RCA cleaning in step S1.
8. The preparation method according to claim 6, wherein the growth time of the support layer in the reaction chamber in the step S2 is 5-120 min.
CN202010146464.9A 2020-03-05 2020-03-05 Graphene interlayer flexible substrate for heteroepitaxy and preparation method thereof Active CN111341836B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010146464.9A CN111341836B (en) 2020-03-05 2020-03-05 Graphene interlayer flexible substrate for heteroepitaxy and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010146464.9A CN111341836B (en) 2020-03-05 2020-03-05 Graphene interlayer flexible substrate for heteroepitaxy and preparation method thereof

Publications (2)

Publication Number Publication Date
CN111341836A true CN111341836A (en) 2020-06-26
CN111341836B CN111341836B (en) 2022-05-03

Family

ID=71184245

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010146464.9A Active CN111341836B (en) 2020-03-05 2020-03-05 Graphene interlayer flexible substrate for heteroepitaxy and preparation method thereof

Country Status (1)

Country Link
CN (1) CN111341836B (en)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1598047A (en) * 2004-08-31 2005-03-23 北京科技大学 Process for preparing large area high quality anti-crack on diamant film
US20060203346A1 (en) * 2005-03-14 2006-09-14 Shin-Etsu Chemical Co., Ltd. Multilayer substrate, method for producing a multilayer substrate, and device
US20140001151A1 (en) * 2012-06-27 2014-01-02 Yon-Hua TZENG Method of transferring a graphene film
CN106486344A (en) * 2016-12-01 2017-03-08 无锡格菲电子薄膜科技有限公司 A kind of preparation method of the graphene film of patterning
CN106835274A (en) * 2017-01-23 2017-06-13 中国科学院半导体研究所 Heteroepitaxial diamond and preparation method thereof
US20170352538A1 (en) * 2016-06-03 2017-12-07 Jeehwan Kim Systems and Methods for Fabricating Single-Crystalline Diamond Membranes
CN108611680A (en) * 2018-04-24 2018-10-02 中国科学院半导体研究所 A kind of growing method of high-speed high-quality amount single-crystal diamond
CN108831823A (en) * 2018-05-30 2018-11-16 大连理工大学 InGaN film on flexible transparent polyimide substrate and preparation method thereof
US20180347033A1 (en) * 2017-06-01 2018-12-06 The Industry & Academic Cooperation in Chungnan National University (IAC) Transfer-Free Method for Producing Graphene Thin Film

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1598047A (en) * 2004-08-31 2005-03-23 北京科技大学 Process for preparing large area high quality anti-crack on diamant film
US20060203346A1 (en) * 2005-03-14 2006-09-14 Shin-Etsu Chemical Co., Ltd. Multilayer substrate, method for producing a multilayer substrate, and device
US20140001151A1 (en) * 2012-06-27 2014-01-02 Yon-Hua TZENG Method of transferring a graphene film
US20170352538A1 (en) * 2016-06-03 2017-12-07 Jeehwan Kim Systems and Methods for Fabricating Single-Crystalline Diamond Membranes
CN106486344A (en) * 2016-12-01 2017-03-08 无锡格菲电子薄膜科技有限公司 A kind of preparation method of the graphene film of patterning
CN106835274A (en) * 2017-01-23 2017-06-13 中国科学院半导体研究所 Heteroepitaxial diamond and preparation method thereof
US20180347033A1 (en) * 2017-06-01 2018-12-06 The Industry & Academic Cooperation in Chungnan National University (IAC) Transfer-Free Method for Producing Graphene Thin Film
CN108611680A (en) * 2018-04-24 2018-10-02 中国科学院半导体研究所 A kind of growing method of high-speed high-quality amount single-crystal diamond
CN108831823A (en) * 2018-05-30 2018-11-16 大连理工大学 InGaN film on flexible transparent polyimide substrate and preparation method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
金鹏 等: "MPCVD生长半导体金刚石材料的研究现状", 《微纳电子技术》 *

Also Published As

Publication number Publication date
CN111341836B (en) 2022-05-03

Similar Documents

Publication Publication Date Title
CN102618930B (en) A kind of preparation method of AlN crystal
CN106835268A (en) A kind of preparation method of group III-nitride substrate
CN105861987B (en) Growing method of gallium nitride based on hexagonal boron nitride and magnetron sputtering aluminium nitride
CN111029246B (en) Method for reducing triangular defects in SiC epitaxial layer
CN113235047B (en) Preparation method of AlN thin film
CN101515543B (en) Gallium nitride membrane structure grown on silicon substrate and growing method thereof
RU2008145801A (en) METHOD FOR GROWING NITRIDE III SEMICONDUCTOR CRYSTAL OF GROUP III, METHOD FOR PRODUCING NITRIDE III SEMICONDUCTOR CRYSTAL FROM NITRIDE III GROUP AND NITRIDE III SEMICONDUCTOR CRYSTAL SUBSTRATE
CN109461644B (en) Preparation method of transparent monocrystal AlN, substrate and ultraviolet light-emitting device
JP2007230823A (en) Method for manufacturing silicon carbide single crystal ingot, and silicon carbide single crystal ingot
WO2023016158A1 (en) Sic step flow rapid growth method based on growth monomer chemical potential regulation under non-equilibrium condition
CN112242459B (en) AlGaN film with in-situ SiN dislocation annihilation layer and epitaxial growth method thereof
CN105441902A (en) Epitaxial silicon carbide-graphene composite film preparation method
Liu et al. Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
CN111663181B (en) Preparation method and application of gallium oxide film
Hu et al. Step flow growth of β-Ga2O3 films on off-axis 4H-SiC substrates by LPCVD
CN108878266A (en) A method of growing mono-crystal gallium nitride film on polycrystalline or amorphous substrate
CN112490112A (en) Gallium oxide film and heteroepitaxial growth method and application thereof
WO2020006772A1 (en) Gallium nitride single crystal material and preparation method therefor
CN111341836B (en) Graphene interlayer flexible substrate for heteroepitaxy and preparation method thereof
CN102651310B (en) Wide bandgap monocrystal film prepared from multiple buffer layers and method
JPH0513342A (en) Semiconductur diamond
CN104846438A (en) Growth method of aluminum indium nitride film
CN112813497B (en) Method for assisting growth of single crystal diamond through heteroepitaxy protection ring
CN102651309B (en) Structure and preparation method of low-cost wide bandgap single crystal film
JP4595592B2 (en) Single crystal growth method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant