CN111337389A - Silicon wafer hydrophilicity detection device and detection method - Google Patents
Silicon wafer hydrophilicity detection device and detection method Download PDFInfo
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- CN111337389A CN111337389A CN202010248560.4A CN202010248560A CN111337389A CN 111337389 A CN111337389 A CN 111337389A CN 202010248560 A CN202010248560 A CN 202010248560A CN 111337389 A CN111337389 A CN 111337389A
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N13/00—Investigating surface or boundary effects, e.g. wetting power; Investigating diffusion effects; Analysing materials by determining surface, boundary, or diffusion effects
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N13/00—Investigating surface or boundary effects, e.g. wetting power; Investigating diffusion effects; Analysing materials by determining surface, boundary, or diffusion effects
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Abstract
The invention provides a silicon wafer hydrophilicity detection device and a silicon wafer hydrophilicity detection method, which comprise a dropping liquid pipe and a supporting component used for enabling a silicon wafer to be obliquely placed at a set angle, wherein the dropping liquid pipe is configured to be quantitatively titrated at the highest position of the silicon wafer along the width direction of the silicon wafer. The detection device and the detection method provided by the invention can be used for quickly carrying out titration operation on the silicon wafer and directly observing the detection result, and are convenient, safe, good in reproducibility, high in consistency, simple in structural design, easy to operate, wide in universality and high in detection efficiency.
Description
Technical Field
The invention belongs to the technical field of solar-grade silicon wafer performance detection, and particularly relates to a silicon wafer hydrophilicity detection device and a silicon wafer hydrophilicity detection method.
Background
The PID (potential induced degradation) phenomenon of the photovoltaic module has attracted high attention in the whole photovoltaic industry, and more module manufacturers and related research institutions have conducted extensive research and analysis on the induced mechanism of the PID degradation of the module. The main external factors that affect the PID attenuation of the assembly are ambient temperature, ambient humidity, and the bias electric field that the system voltage creates between the alloy frame, glass, and internal circuitry. During long-term observation of photovoltaic power stations, it was found that the PID phenomenon most easily occurs in the case where morning dew or rain remains on the surface of the component and there is illumination.
When the battery is manufactured, an ultrathin oxide layer, namely a silicon dioxide layer, is formed between the surface of the PN junction of the battery and the antireflection film, and the silicon dioxide layer can block the erosion of positive ions to the PN junction, so that the influence of the PID effect is reduced. Before the front surface is coated with a film through ozone or tubular thermal oxygen, a layer of silicon dioxide with the thickness of 1-2 nm is grown to be used as Anti-PID, and then a good effect can be obtained through test data observation. In the existing detection method, an ellipsometer is mainly used for measurement or a five-point vertical titration method, but the two methods have the following problems:
1) the ellipsometer has the advantages of complex measurement steps, time and labor waste, low detection efficiency, high production cost and no suitability for the existing large-scale batch production requirements.
2) The five-point titration method is a common detection method in the prior art, namely dripping water on the center and four corners of a horizontally placed silicon wafer by using a dropper, observing whether the water drops uniformly diffuse on the silicon wafer and measuring the diameter of a diffusion area, wherein if the diffused area meets the requirement of a circle and the diffusion diameter meets a certain requirement, the hydrophilicity of the silicon wafer is qualified. For example, the published Chinese patent CN205863141U, a hydrophilicity testing device for etched silicon wafers, and a CN206850721U, hydrophilicity testing device and equipment for silicon wafers are used for performing hydrophilicity tests by a five-point vertical titration method. However, the testing method only tests the diffusion of five points on the silicon wafer, and cannot penetrate through the width direction of the silicon wafer, so that whether the width direction of the silicon wafer has a fault or not cannot be judged, and the hydrophilic detection has inaccurate risk; meanwhile, the mode is not easy to fix, so that the detection result is unstable; in addition, the detection method needs to measure the size and the area of the titrated diffusion region for many times, so that the conclusion cannot be easily obtained visually, time and labor are wasted, the detection efficiency is low, particularly, the hydrophilic detection of a plurality of batches of silicon wafers needs a period of time to measure the result, and the detection speed seriously restricts the batch production of the traditional assembly line.
Therefore, how to provide a convenient and safe silicon wafer hydrophilicity test with good reproducibility and consistency, and the detection result can be observed more visually is a key for solving the technical problem of PID attenuation of the photovoltaic module, and simultaneously improving the production efficiency, ensuring the quality of the silicon wafer and reducing the production cost.
Disclosure of Invention
The invention provides a silicon wafer hydrophilicity detection device and a silicon wafer hydrophilicity detection method, which are suitable for detecting sizes of various silicon wafers and solve the technical problems of unstable hydrophilicity detection results, poor reproducibility and high production cost in the prior art.
In order to solve the technical problems, the invention adopts the technical scheme that:
the device for detecting the hydrophilicity of the silicon wafer comprises a dropping liquid pipe and a supporting component for enabling the silicon wafer to be obliquely placed at a set angle, wherein the dropping liquid pipe is configured to be used for quantitatively titrating at the highest position of the silicon wafer along the width direction of the silicon wafer.
Further, the support assembly comprises a fixed frame, and the silicon wafer is placed on the fixed frame at an inclination angle of 20-60 °.
Further, the inclination angle of the fixed frame is 30-45 degrees; and a stop block is arranged on the inclined surface of the fixed frame at one side close to the silicon wafer and is arranged at the lower end part of the fixed frame.
Further, still including being used for the adjustment the dropping liquid pipe makes the dropping liquid pipe towards the regulating element of the vertical dropping liquid in silicon chip surface, regulating element one end with supporting component connects, and the other end quilt the dropping liquid pipe runs through the setting.
Furthermore, the adjusting component comprises symmetrically arranged connecting rods and a fixed plate for fixing the dropping liquid tube, one end of each connecting rod is movably connected with the supporting component, and the other end of each connecting rod is integrally or movably connected with the fixed plate; the fixed plate is provided with a plurality of boss holes, the boss holes extend along one side, close to the silicon wafer, of the fixed plate, and the boss holes are matched with the liquid dropping pipes.
Furthermore, the drip tube fixing device further comprises a clamping piece used for fixing the drip tube, and the clamping piece is in contact with one side, far away from the boss hole, of the fixed plate.
A silicon chip hydrophilicity detection method adopts the detection device, the silicon chip is obliquely placed on the supporting component at a set angle; and executing the dropping liquid pipe to quantitatively titrate a plurality of liquid drops to the highest position of the surface of the silicon wafer along the width direction of the silicon wafer by a set height, and observing whether the liquid drops continuously flow to the lowest position of the silicon wafer along the inclination direction of the silicon wafer within a set time, so as to judge whether the hydrophilicity detection of the silicon wafer is qualified.
Furthermore, five liquid drops are titrated on each silicon chip, and the liquid drops are uniformly arranged along the width direction of the silicon chip.
Further, the length of the liquid drop from the initial position to the final position in 3-5s penetrates through the length direction of the silicon wafer.
Further, the vertical distance between the liquid dropping port of the liquid dropping pipe and the surface of the silicon wafer is 5-15 mm; the drop content of each drop was 15-25. mu.l.
Compared with the prior art, the detection device and the detection method provided by the invention can be used for detecting the water dropping of the silicon wafer which is obliquely arranged downwards, wherein the titration mode is that five points are uniformly titrated at the highest position of the silicon wafer along the width direction of the silicon wafer, and whether the water drops can continuously penetrate through the inclined length direction of the silicon wafer and flow to the lowest position within 3-5s is observed, so that whether the silicon wafer is qualified in the hydrophilicity test can be judged. The invention can quickly carry out titration operation on the silicon chip and directly observe the detection result, is convenient, safe, good in reproducibility, high in consistency, simple in structural design, easy to operate, wide in universality and high in detection efficiency.
Drawings
FIG. 1 is a schematic structural diagram of a detecting device according to an embodiment of the present invention;
FIG. 2 is a side view of a detection device according to one embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a fixing unit according to another embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a positioning unit according to another embodiment of the present invention;
fig. 5 is a schematic structural diagram of a clamping member according to an embodiment of the invention.
In the figure:
100. support assembly 110, fixed frame 111, sloping frame
112. Bracket 113, side frame 120, and stopper
200. Adjusting component 210, connecting rod 220 and fixed plate
221. Boss hole 230, clamp 231, tapered hole
300. Dropping liquid pipe 400 and silicon wafer
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments.
In this embodiment, as shown in fig. 1, the device for detecting hydrophilicity of a silicon wafer includes a dropping tube 300, and further includes a supporting assembly 100 for placing the silicon wafer 400 obliquely at a predetermined angle, the dropping tube 300 titrates a plurality of drops quantitatively at the highest position of the upper plane of the silicon wafer 400 along the width direction of the silicon wafer 400, and the flow trajectory of the drops along the oblique direction of the silicon wafer 400 is observed, so as to determine whether the hydrophilicity of the silicon wafer 400 is qualified.
A 3-5nm silicon dioxide layer is formed on the diffusion surface of the silicon wafer 400, which can ensure that the PID resistance of the component made of the corresponding cell is qualified, and since the silicon dioxide is very hydrophilic, the solution in the dropping tube 300 is pure water in this embodiment, and the pure water is easily obtained in the cell manufacturing workshop. The dropping pipe 300 drops a plurality of drops of pure water uniformly along the width direction of the silicon wafer 400 on the surface of the silicon wafer 400 on the side containing silicon dioxide, in order to ensure that the drops can uniformly cover the width direction of the silicon wafer 400, generally five positions are selected for dropping, that is, at least two end points on two sides of the silicon wafer 400 and a middle point on a middle axis are included in the width direction of the silicon wafer 400, the other two points are respectively located at two middle positions between the end points and the middle point, and the distribution structure is as shown in fig. 2. After dropping from the upper end of the silicon wafer 400, the pure water droplets instantly diffuse on the surface of the silicon wafer 400 containing silicon dioxide and flow downward along the inclined surface within 3 to 5 seconds under the action of gravity, and if the pure water droplets all continuously penetrate through the length direction of the silicon wafer 400, the silicon dioxide layer is uniformly distributed on the whole surface of the silicon wafer 400. If the pure water droplets do not diffuse and flow within 3-5s, the thickness of the generated silicon dioxide is not enough, the pure water droplets do not diffuse fast enough, and the PID resistance of the corresponding cell-made component is poor.
Specifically, as shown in fig. 2, the support assembly 100 includes a fixed frame 110, and the inclination angle θ of the silicon wafer 400 placed on the fixed frame 110 is 20-60 °, because if the angle θ of the silicon wafer 400 placed obliquely is smaller than 20 °, the liquid drops will flow laterally on the surface of the silicon wafer 400, so that the flowing track cannot penetrate through the length direction of the silicon wafer 400, and it cannot be determined whether the silicon dioxide plating layer on the silicon wafer 400 is uniform; and at this time, the pure water droplets are not easy to flow down along the inclined surface of the silicon wafer 400, thereby causing misjudgment. If the silicon wafer 400 is placed in an inclined manner at an angle theta larger than 60 degrees, the pure water droplets roll on the inclined surface of the silicon wafer 400, so that the droplets before and after rolling cannot continuously flow to form a complete length track, and the risk of missing detection or false detection is caused, thereby causing inaccurate hydrophilic detection; meanwhile, even if the concentration of silicon dioxide is insufficient, pure water droplets can still flow down along the inclined plane of the silicon wafer 400, but the component made of the corresponding cell piece is resistant to PID failure, and the product quality is seriously influenced. Therefore, the silicon wafer 400 is placed on the fixed frame 110 at an inclination angle θ of 20 to 60 °, and preferably, when the inclination angle θ is 30 to 45 °, the fluidity of the drops of pure water on the silicon wafer 400 and the diffusion effect of the fusion with silicon dioxide are the best, and the detection is more accurate.
The fixed frame 110 at least comprises an inclined frame 111 for obliquely placing the silicon wafer 400 and a bracket 112 for supporting the inclined frame 111, wherein the angle theta of the inclined frame 111 is 30-45 degrees, the inclined frame 111 is a flat plane, and the length and width of the inclined frame 111 are at least equal to the side length of the silicon wafer 400, so that the silicon wafer 400 can be conveniently and stably placed on the inclined frame 111. The cross section enclosed by the bracket 112, the inclined frame 111 and the horizontal plane may be a triangle, such as a right-angled triangle, as shown in fig. 1, or may be an acute triangle or an obtuse triangle (omitted); or a quadrilateral, such as a right trapezoid, as shown in fig. 3; or the shape of other structures; but the included angle theta between the bracket 112 and the horizontal plane is within the protection range of the scheme as long as the included angle theta is ensured to be 30-45 degrees. Certainly, in order to ensure the stability of the whole frame of the fixed frame 110, side frames 113 may be disposed at two side end surfaces of the inclined frame 111, and the side frames 113 may be flat plates and adapted to the cross-sectional end surface enclosed by the inclined frame 111 and the bracket 112; it can also be a side rod, which connects the inclined frame 111 and the bracket 112 respectively to strengthen the fixed connection between the inclined frame 111 and the bracket 112.
Further, in order to ensure the stability of the inclined placement of the silicon wafer 400, the inclined frame 111 on the inclined surface of the fixed frame 110 near the silicon wafer 400 is provided with a stopper 120, the stopper 120 is disposed at the lower end of the fixed frame 110 and vertically disposed along the width direction of the inclined frame 111, the length of the stopper 120 is at least greater than half of the width of the silicon wafer 400 and is located at the middle position of the inclined frame 111 in the width direction, and the thickness of the stopper 120 is not particularly limited as long as the stopper can prevent the silicon wafer 400 from sliding down in an inclined manner.
The detection device further comprises an adjusting component 200 for adjusting the dropping tube 300 and enabling the dropping tube 300 to vertically drop towards the surface of the silicon wafer 400, the adjusting component 200 can adjust and fix the position of the dropping tube 300 to adapt to the placement positions of different sizes of silicon wafers 400, one end of the adjusting component 200 is connected with the supporting component 100, and the other end of the adjusting component is penetrated and arranged by the dropping tube 300.
Further, the adjusting assembly 200 includes a connecting rod 210 and a fixed plate 220 for fixing the dropping liquid tube 300, the connecting rod 210 is movably connected to the supporting assembly 100 at one end and is connected to the fixed plate 220 at the other end, the connecting rod 210 is hinged to the bracket 112, and the angle of the connecting rod 210 can be adjusted to adjust the position of the dropping liquid tube 300. In this embodiment, the dropping liquid tube 300 is a commonly used adjustable liquid transfer device, the metering range is 10-200ul, the precision is high, and the quantitative removal of each dropping liquid can be ensured, specifically, the dropping liquid amount of each dropping liquid is required to be 15-25ul, and the hydrophilic effect with silicon dioxide is optimal, so as to ensure that the dropping liquid can sufficiently flow from the uppermost end to the lowermost end of the silicon wafer 400 within 3-5s, and the hydrophilic test of the silicon wafer 400 is completed.
As shown in fig. 4, the connecting rod 210 is integrally connected to the fixed plate 220, and the position of the fixed plate 220 can be adjusted by directly adjusting the hinge angle between the connecting rod 210 and the bracket 112, so as to adjust the vertical arrangement of the dropping liquid tube 300 and make the vertical height H of the lower port of the dropping liquid tube 300 from the surface of the silicon wafer 400 be 5-15 mm. This is because if the vertical height H is too high, the gravitational acceleration of the pure water droplets is increased, so that the initial velocity at which the droplets fall on the liquid surface of the silicon wafer 400 is high, which is not favorable for the balance of hydrophilicity detection; if the vertical height H is too low, the deionized water droplets will stick to the wafer 400. Therefore, the vertical height H of the lower port of the dropping tube 300 from the surface of the silicon wafer 400 is preferably 5-15mm, so that the dropping of pure water on the silicon wafer 400 can be ensured not to splash, and the contact effect with the silicon wafer 400 in the hydrophilicity test can also be ensured to be the best. The structure is simple, easy to control and process, can ensure the dropping safety of liquid drops and the consistency of the dropping effect, and is favorable for observing the uniformity of hydrophilic tests.
As shown in fig. 1, the connecting rod 210 is movably connected to the fixed plate 220, and preferably, the connecting rod 210 is hinged to the fixed plate 220. The adjustment mode of the structure is more flexible, the adjustment space is larger, the structure is also suitable for the structures of the fixed frames 110 with various dimensions, and the fixed plate 220 can be always kept to be horizontally arranged, so that the drip tube 300 is ensured to be vertically arranged.
Further, be equipped with a plurality of boss holes 221 on the central axis of fixed plate 220 length direction, boss hole 221 is straight tubular structure, and the quantity of boss hole 221 is the same with the dropping liquid quantity and for setting up with the dropping liquid position, and boss hole 221 runs through the thickness of fixed plate 220 and extends the setting along fixed plate 220 near silicon chip 400 one side, and the internal diameter of boss hole 221 and the external diameter looks adaptation of dropping liquid pipe 300. The purpose is to ensure that the dropping tube 300 is not easily shaken when being clamped and fixed on the fixed plate 220, so that the stability of dropping can be ensured. The height of the boss hole 221 may be determined according to practical circumstances and is not particularly limited herein.
In order to further ensure the stability of the placement of the drip tube 300, a clamping member 230 is disposed on the outer wall of the drip tube 300, as shown in fig. 5, and the clamping member 230 contacts with a side of the stationary plate 220 away from the boss hole 221. In this embodiment, the clamping member 230 is a flat plate structure, a tapered hole 231 is disposed at the center of the clamping member 230, the tapered hole 231 penetrates through the thickness direction of the clamping member 230, and the small-diameter end of the tapered hole 231 is disposed at a side close to the boss hole 221 and is adapted to the inner diameter of the boss hole 221. The tapered hole 231 enables the dropping liquid tube 300 to be suspended, and the dropping liquid tube 300 penetrates through the boss hole 221 to be vertically arranged downwards, so that the accuracy of the detection result can be further ensured.
Compared with the existing five-point titration test for the horizontally placed silicon wafer 400, the uniform test penetrating through any width direction of the silicon wafer 400 is more accurate, whether a silicon dioxide layer on the silicon wafer 400 has a fault or not can be judged, and the uniformity and consistency of a coating are more accurately detected; meanwhile, in the embodiment, other auxiliary tools are not needed for measuring the flow track, and whether the flow track of the liquid drop continuously penetrates through the length of the silicon wafer 400 along the inclined direction of the silicon wafer is observed within 3-5s, so that the method is simple and easy to observe, the hydrophilicity test result of the silicon wafer 400 can be quickly determined, and further whether the thickness of the silicon dioxide grown on the front surface of the silicon wafer 400 is uniform and qualified can be judged, and further whether the Anti-PID effect of the silicon wafer 400 meets the requirement can be known, the operation time of the whole process is short, and the test accuracy is high.
A silicon chip hydrophilicity detection method adopts the detection device, and comprises the following specific steps:
firstly: the silicon wafer 400 is placed on the support assembly 100 at a set angle with inclination.
Specifically, as shown in fig. 1, the silicon wafer 400 is placed on the inclined frame 111 on the fixed frame 110, which is set at an inclination angle θ of 30-45 °, and the height center line of the silicon wafer 400 is aligned with the width axis of the inclined frame 111, that is, the silicon wafer 400 is located at the middle position of the inclined frame 111; and the lower end surface of the silicon wafer 400 is brought into contact with the stopper 120 so that the stopper 120 blocks the silicon wafer 400 to be inclined downward.
Secondly, the adjusting assembly 200 is adjusted to make the dropping pipe 300 vertically correspond to the highest position of the surface of the silicon wafer 400, and the distance from the dropping opening at the lower end of the dropping pipe 300 to the highest position of the silicon wafer 400 is 5-15 mm.
Specifically, the dropping liquid tube 300 is clamped by the clamping member 230, and the dropping liquid tube 300 penetrates through the boss hole 221 on the fixed plate 220, so that the dropping liquid tube 300 is vertically arranged; and then the positions of the connecting rod 210 and the fixed plate 220 are adjusted, and the distance from the liquid dropping opening of the liquid dropping pipe 300 to the highest position of the silicon wafer 400 is ensured to be 5-15mm, namely the vertical height H from the lower end opening of the liquid dropping pipe 300 to the surface of the silicon wafer 400 is 5-15 mm. This is because if the vertical height is too high, the gravitational acceleration of the pure water droplets is increased, so that the initial velocity of the droplets falling on the liquid surface of the silicon wafer 400 is high, which is not favorable for the equilibrium of the hydrophilicity detection; if the vertical height is too low, the deionized water droplets will stick to the wafer 400. Therefore, the vertical height H of the lower port of the dropping tube 300 from the surface of the silicon wafer 400 is preferably 5-15mm, so that the dropping of pure water on the silicon wafer 400 can be ensured not to splash, and the contact effect with the silicon wafer 400 in the hydrophilicity test can also be ensured to be the best. The structure is simple, easy to control and process, can ensure the dropping safety of liquid drops and the consistency of the dropping effect, and is favorable for observing the uniformity of hydrophilic tests.
Finally, the liquid dropping pipe 300 is executed to quantitatively titrate a plurality of liquid drops to the highest position of the surface of the silicon wafer 400 along the width direction of the silicon wafer 400, and the liquid drops continuously flow to the lowest position of the silicon wafer 400 along the inclined direction of the silicon wafer 400 within a set time, so that the silicon wafer 400 can be judged to be qualified in hydrophilicity detection.
Specifically, five dispensing points are selected along the width direction of each silicon wafer 400 and are uniformly and symmetrically arranged, preferably, two end points and a middle point on the middle axis of the silicon wafer 400 are located at two middle positions between the end points and the middle point, respectively, and the distribution structure is as shown in fig. 2.
Then operating the dropping liquid pipe 300 to uniformly drop liquid on the surface of the silicon wafer 400 for five times along the width direction of the silicon wafer 400, and simultaneously ensuring that the dropping liquid amount is 15-25 mul each time; whether the flow track of each drop from the highest position to the lowest position along the length direction of the inclined surface of the silicon wafer 400 penetrates through the length of the silicon wafer 400 is observed, and then the hydrophilicity test result of the silicon wafer 400 can be directly judged.
After dropping from the upper end of the silicon wafer 400, pure water drops instantly diffuse on the surface of the silicon wafer 400 containing silicon dioxide within 3-5s under the action of gravity and flow downwards along the inclined surface, if the pure water drops continuously penetrate through the length direction of the silicon wafer 400, the surface of the whole silicon wafer 400 is uniformly distributed with silicon dioxide layers and has consistent thickness, and the component made of the battery piece is effective in PID resistance. If the pure water droplets do not diffuse and flow within 3-5s, the thickness of the generated silicon dioxide is not enough, the pure water droplets do not diffuse fast enough, and the PID resistance of the corresponding cell-made component is poor.
According to the detection device and the detection method provided by the invention, the silicon wafer which is obliquely and downwards arranged is subjected to water dripping detection, five points are uniformly titrated at the highest position of the silicon wafer along the width direction of the silicon wafer, whether water drops can continuously penetrate through the inclined length direction of the silicon wafer and flow to the lowest position within 3-5s is observed, and whether the silicon wafer is qualified in a hydrophilicity test can be judged. The invention can quickly carry out titration operation on the silicon chip and directly observe the detection result, is convenient, safe, good in reproducibility, high in consistency, simple in structural design, easy to operate, wide in universality and high in detection efficiency.
The embodiments of the present invention have been described in detail, and the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (10)
1. The silicon wafer hydrophilicity detection device comprises a dropping liquid pipe and is characterized by further comprising a supporting component used for enabling a silicon wafer to be obliquely placed at a set angle, wherein the dropping liquid pipe is configured to be used for quantitatively titrating at the highest position of the silicon wafer along the width direction of the silicon wafer.
2. The silicon wafer hydrophilicity detecting device according to claim 1, wherein the supporting component comprises a fixed frame, and the silicon wafer is placed on the fixed frame with an inclination angle of 20-60 °.
3. The silicon wafer hydrophilicity detection device according to claim 2, wherein the inclination angle of the fixed frame is 30-45 °; and a stop block is arranged on the inclined surface of the fixed frame at one side close to the silicon wafer and is arranged at the lower end part of the fixed frame.
4. The silicon wafer hydrophilicity detecting device according to any one of claims 1 to 3, further comprising an adjusting component for adjusting the dropping liquid tube and dropping the dropping liquid tube vertically towards the surface of the silicon wafer, wherein one end of the adjusting component is connected with the supporting component, and the other end of the adjusting component is penetrated by the dropping liquid tube.
5. The silicon wafer hydrophilicity detecting device according to claim 4, wherein the adjusting component comprises symmetrically arranged connecting rods and a fixed plate for fixing the dropping liquid tube, one end of each connecting rod is movably connected with the supporting component, and the other end of each connecting rod is integrally or movably connected with the fixed plate; the fixed plate is provided with a plurality of boss holes, the boss holes extend along one side, close to the silicon wafer, of the fixed plate, and the boss holes are matched with the liquid dropping pipes.
6. The silicon wafer hydrophilicity detecting device according to claim 5, further comprising a holding member for fixing the dropping liquid tube, wherein the holding member is in contact with a side of the fixed plate away from the boss hole.
7. A method for detecting the hydrophilicity of a silicon wafer, which is characterized in that the silicon wafer is obliquely placed on the supporting component at a set angle by using the detection device as claimed in any one of claims 1 to 6; and executing the dropping liquid pipe to quantitatively titrate a plurality of liquid drops to the highest position of the surface of the silicon wafer along the width direction of the silicon wafer by a set height, and observing whether the liquid drops continuously flow to the lowest position of the silicon wafer along the inclination direction of the silicon wafer within a set time, so as to judge whether the hydrophilicity detection of the silicon wafer is qualified.
8. The method for detecting the hydrophilicity of the silicon wafer as claimed in claim 7, wherein five droplets are titrated to each silicon wafer, and the droplets are uniformly arranged along the width direction of the silicon wafer.
9. The silicon wafer hydrophilicity detection method according to claim 8, wherein the length of the liquid drop from the initial position to the end position in 3-5s is along the length direction of the silicon wafer.
10. The silicon wafer hydrophilicity detecting method according to any one of claims 7 to 9, wherein the vertical distance from the dropping opening of the dropping tube to the surface of the silicon wafer is 5 to 15 mm; the drop content of each drop was 15-25. mu.l.
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| CN202010248560.4A CN111337389A (en) | 2020-04-01 | 2020-04-01 | Silicon wafer hydrophilicity detection device and detection method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112268838A (en) * | 2020-10-30 | 2021-01-26 | 江苏科技大学 | Hydrophobic surface performance testing device and characterization method thereof |
| CN112525775A (en) * | 2020-12-07 | 2021-03-19 | 保定华月胶带有限公司 | Anti-adhesion hydrophobicity quantitative detection method and device based on anti-adhesion conveying belt |
| CN112666050A (en) * | 2020-11-30 | 2021-04-16 | 江苏科技大学 | Functional surface hydrophilic performance testing device and characterization method |
-
2020
- 2020-04-01 CN CN202010248560.4A patent/CN111337389A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112268838A (en) * | 2020-10-30 | 2021-01-26 | 江苏科技大学 | Hydrophobic surface performance testing device and characterization method thereof |
| CN112666050A (en) * | 2020-11-30 | 2021-04-16 | 江苏科技大学 | Functional surface hydrophilic performance testing device and characterization method |
| CN112525775A (en) * | 2020-12-07 | 2021-03-19 | 保定华月胶带有限公司 | Anti-adhesion hydrophobicity quantitative detection method and device based on anti-adhesion conveying belt |
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