CN111334864A - 一种窄带隙二维半导体化合物EuTe4、其制备方法及其应用 - Google Patents
一种窄带隙二维半导体化合物EuTe4、其制备方法及其应用 Download PDFInfo
- Publication number
- CN111334864A CN111334864A CN202010119194.2A CN202010119194A CN111334864A CN 111334864 A CN111334864 A CN 111334864A CN 202010119194 A CN202010119194 A CN 202010119194A CN 111334864 A CN111334864 A CN 111334864A
- Authority
- CN
- China
- Prior art keywords
- eute4
- temperature
- semiconductor compound
- narrow bandgap
- dimensional semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 150000001875 compounds Chemical class 0.000 title claims abstract description 46
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 45
- 239000013078 crystal Substances 0.000 claims abstract description 22
- 230000008859 change Effects 0.000 claims abstract description 16
- 239000000126 substance Substances 0.000 claims abstract description 3
- 239000002994 raw material Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 18
- 239000010453 quartz Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 238000001816 cooling Methods 0.000 claims description 15
- 239000000155 melt Substances 0.000 claims description 12
- 229910052714 tellurium Inorganic materials 0.000 claims description 12
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000002156 mixing Methods 0.000 claims description 9
- 238000004806 packaging method and process Methods 0.000 claims description 9
- 229910052693 Europium Inorganic materials 0.000 claims description 6
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 4
- 238000011160 research Methods 0.000 abstract description 2
- 238000011161 development Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 108010053481 Antifreeze Proteins Proteins 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000004298 light response Effects 0.000 description 3
- 238000005057 refrigeration Methods 0.000 description 3
- 238000001308 synthesis method Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/02—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
技术领域
本公开涉及一种窄带隙二维半导体化合物EuTe4、其制备方法及其应用。
背景技术
二维材料具有丰富和奇特的物理性质和尺寸效应,自新世纪以来取得了爆发式的发展。由于其载流子迁移和热量扩散等物理现象都被限制在二维平面内,因而在光、电、热等方面展现出许多奇特的性质,在光电、热电、场效应管等领域应用广泛;同时,由于二维材料晶体结构的特殊性质导致了不同的电学特性或光学特性的各向异性,在非线性光学、激光器、光谱学、量子计算机等领域具有很大的发展潜力。
发明内容
本公开提供了一种窄带隙二维半导体化合物EuTe4、其制备方法及其应用,兼具二维材料和窄带隙半导体材料的优点,可应用于光电探测器、热电材料、二维超晶格器件和相变电子学器件。本公开所采用的技术方案为:
进一步,EuTe4晶体学参数如下:
本公开还提供了一种上述窄带隙二维半导体化合物EuTe4的制备方法,包括以下步骤:
S1、将原料铕块和原料碲块按照1∶13-1∶30的摩尔比例进行混合,得到混合原料;
S2、将混合原料在真空度小于10-3mbar的真空条件下,封装于石英管内;
S3、将装有混合原料的石英管加热至温度T1使原料熔化,之后保持保持T1温度,恒温时间大于10小时,使熔体均匀;温度T1范围为700℃<T1<1000℃;
S4、将经过步骤S3的熔体以小于10℃/h的降温速度降温至温度T2,温度T2范围为410℃<T2<430℃,之后保持温度T2至2天以上;最后用离心机分离出窄带隙二维半导体化合物EuTe4的晶体。
本公开还提供了另一种上述窄带隙二维半导体化合物EuTe4的制备方法,包括以下步骤:
S1将原料铕块和原料碲块按照1∶1的摩尔比例进行混合,得到混合原料,并进行研磨;
S2、将研磨后的混合原料在真空度小于10-3mbar的真空条件下,封装于石英管内;
S3、将装有混合原料的石英管加热至温度T3使原料熔化,之后保持保持T3温度,恒温时间大于20小时,之后自然冷却,得到EuTe化合物;温度T3范围为680℃<T1<900℃;
S4、取出EuTe化合物,向EuTe化合物中加入碲块进行混合得到混合料,EuTe化合物与碲块的质量比为1∶12~1∶30;将混合料在真空度小于10-3mbar的真空条件下封装于石英管内;
S5、将装有混合原料的石英管加热至温度T1使原料熔化,之后保持保持T1温度,恒温时间大于10小时,使熔体均匀;温度T1范围为700℃<T1<1000℃;
S6、将经过步骤S5的熔体以小于10℃/h的降温速度降温至温度T2,温度T2范围为410℃<T2<430℃,之后保持温度T2至2天以上;最后用离心机分离出窄带隙二维半导体化合物EuTe4的晶体。
本公开还提供了一种上述窄带隙二维半导体化合物EuTe4在光电探测器中的应用。
EuTe4带隙较窄,从而光响应范围宽。适宜于多种波段光电探测器的开发,如紫外、可见、红外光电探测;Bolometer热敏材料等。
本公开还提供了一种上述窄带隙二维半导体化合物EuTe4在热电材料中的应用。
EuTe4带隙较窄,晶格结构具有二维层状结构,从而导电性质易于调控。适宜于新型热电材料的开发,如通过掺杂提高其热电系数、电导率、同时降低其热导率,从而使其具有较高热电优值。在热电应用、半导体制冷等领域具有潜在应用价值。
本公开还提供了一种上述窄带隙二维半导体化合物EuTe4在二维超晶格器件中的应用。
EuTe4为窄禁带半导体材料,同时为二维材料。适宜于与其它二维材料进行复合、集成,从而制备二维超晶格半导体器件,在中远红外超晶格激光器、场效应管等方面具有潜在应用价值。
本公开还提供了一种上述窄带隙二维半导体化合物EuTe4在相变电子学器件中的应用。
EuTe4为二维窄禁带半导体材料,同时其电学性质在非常宽的温区内呈现巨大的热滞效应,表明存在一级相变。可作为相变开关、相变储存器等应用于电子学功能器件领域。
本公开的有益效果为:
本公开中的EuTe4为窄禁带半导体,光学带隙约为0.3eV,电阻随着温度降低而增大,具有典型的一阶相变特征;本公开中的具有二维材料和窄带隙半导体材料的优点,具有重要的应用和基础研究价值,可应用于光电探测器、热电材料、二维超晶格器件和相变电子学器件。EuTe4能隙较窄,从而光响应范围宽;适宜于多种波段光电探测器的开发,如紫外、可见、红外光电探测;Bolometer热敏材料等。EuTe4能隙较窄,晶格结构具有二维层状结构,从而导电性质易于调控;适宜于新型热电材料的开发,如通过掺杂提高其热电系数、电导率、同时降低其热导率,从而使其具有较高热电优值。在热电应用、半导体制冷等领域具有潜在应用价值。EuTe4为窄禁带半导体材料,同时为二维材料;适宜于与其它二维材料进行复合、集成,从而制备二维超晶格半导体器件,在中远红外超晶格激光器、场效应管等方面具有潜在应用价值。EuTe4为二维窄禁带半导体材料,同时其电学性质在非常宽的温区内呈现巨大的热滞效应,表明存在一级相变;可作为相变开关、相变储存器等应用于电子学功能器件领域。
附图说明
为了更清楚地说明本公开实施例的技术方案,下面将对实施例中所需要使用的附图作简要介绍,应当理解,以下附图仅示出了本公开的某些实施例,因此不应被看作是对范围的限定,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他相关附图。
图1是本公开中EuTe4的晶体结构示意图。
图2为EuTe4晶体光电导图。
图3为EuTe4单晶电阻率-温度关系。
图4为EuTe4晶体片示例图;图中的标尺最小刻度为1mm。
具体实施方式
下面将结合本公开实施例中附图,对本公开实施例中的技术方案进行清楚完整的描述。应当理解,此处所描述的具体实施例仅仅用于解释本公开,并不用于限定本公开。基于本公开的实施例,本领域技术人员在没有创造性劳动的前提下所获得的所有其他实施例,都属于本公开的保护范围。
实施例一:
本实施例提供了一种窄带隙二维半导体化合物EuTe4,化学式为EuTe4,晶体结构属于正交晶系,空间群为Pmmn(No.59),晶胞参数为:d=90°;β=90°;γ=90°。EuTe4的晶体结构如图1所示。
图2为EuTe4晶体光电导图,为光谱学测试结果,从图中可以看出EuTe4为窄禁带半导体,光学带隙约为0.3eV。
图3为EuTe4单晶电阻率-温度关系。从图中可以看出EuTe4晶体的电阻-温度依赖关系呈典型的半导体性质,电阻随着温度降低而增大。EuTe4的电阻-温度关系具有一个非常宽的回滞,具有典型的一阶相变特征。
EuTe4晶体学参数如下:
实施例二:
本公开还提供了一种上述窄带隙二维半导体化合物EuTe4的制备方法,包括以下步骤:
S1、将原料铕块和原料碲块按照1∶13-1∶30的摩尔比例进行混合,得到混合原料;
S2、将混合原料在真空度小于10-3mbar的真空条件下,封装于石英管内;
S3、将装有混合原料的石英管加热至温度T1使原料熔化,之后保持保持T1温度,恒温时间大于10小时,使熔体均匀;温度T1范围为700℃<T1<1000℃;
S4、将经过步骤S3的熔体以小于10℃/h的降温速度降温至温度T2,温度T2范围为410℃<T2<430℃,之后保持温度T2至2天以上;最后用离心机分离出窄带隙二维半导体化合物EuTe4的晶体。
通过本实施例可以制作出如图4所示的毫米尺寸晶片。图4为制作而成的EuTe4晶体片示例图;图中的标尺最小刻度为1mm。
实施例三:
本公开还提供了另一种上述窄带隙二维半导体化合物EuTe4的制备方法,包括以下步骤:
S1将原料铕块和原料碲块按照1∶1的摩尔比例进行混合,得到混合原料,并进行研磨;
S2、将研磨后的混合原料在真空度小于10-3mbar的真空条件下,封装于石英管内;
S3、将装有混合原料的石英管加热至温度T3使原料熔化,之后保持保持T3温度,恒温时间大于20小时,之后自然冷却,得到EuTe化合物;温度T3范围为680℃<T1<900℃;
S4、取出EuTe化合物,向EuTe化合物中加入碲块进行混合得到混合料,EuTe化合物与碲块的质量比为1∶12~1∶30;将混合料在真空度小于10-3mbar的真空条件下封装于石英管内;
S5、将装有混合原料的石英管加热至温度T1使原料熔化,之后保持保持T1温度,恒温时间大于10小时,使熔体均匀;温度T1范围为700℃<T1<1000℃:
S6、将经过步骤S5的熔体以小于10℃/h的降温速度降温至温度T2,温度T2范围为410℃<T2<430℃,之后保持温度T2至2天以上;最后用离心机分离出窄带隙二维半导体化合物EuTe4的晶体。
通过本实施例与实施例二的工艺方法,均可以制作出如图4所示的毫米尺寸晶片。本实施例的合成方法与实施例二的合成方法相比,工艺复杂,但晶体产出率相对较高,约为实施例二合成方法的1.2-1.5倍。
实施例四:
本实施例还提供了一种上述窄带隙二维半导体化合物EuTe4在光电探测器中的应用。
EuTe4带隙较窄,从而光响应范围宽。适宜于多种波段光电探测器的开发,如紫外、可见、红外光电探测;Bolometer热敏材料等。
实施例五:
本实施例还提供了一种上述窄带隙二维半导体化合物EuTe4在热电材料中的应用。
EuTe4带隙较窄,晶格结构具有二维层状结构,从而导电性质易于调控。适宜于新型热电材料的开发,如通过掺杂提高其热电系数、电导率、同时降低其热导率,从而使其具有较高热电优值。在热电应用、半导体制冷等领域具有潜在应用价值。
实施例六:
本实施例还提供了一种上述窄带隙二维半导体化合物EuTe4在二维超晶格器件中的应用。
EuTe4为窄禁带半导体材料,同时为二维材料。适宜于与其它二维材料进行复合、集成,从而制备二维超晶格半导体器件,在中远红外超晶格激光器、场效应管等方面具有潜在应用价值。
实施例七:
本实施例还提供了一种上述窄带隙二维半导体化合物EuTe4在相变电子学器件中的应用。
EuTe4为二维窄禁带半导体材料,同时其电学性质在非常宽的温区内呈现巨大的热滞效应,表明存在一级相变。可作为相变开关、相变储存器等应用于电子学功能器件领域。
本公开不局限于上述可选实施方式,在互不抵触的前提下,各方案之间可任意组合;任何人在本公开的启示下都可得出其他各种形式的产品,但不论在其形状或结构上作任何变化,凡是落入本公开权利要求界定范围内的技术方案,均落在本公开的保护范围之内。
Claims (8)
3.一种权利要求1或2所述窄带隙二维半导体化合物EuTe4的制备方法,其特征在于,包括以下步骤:
S1、将原料铕块和原料碲块按照1∶13-1∶30的摩尔比例进行混合,得到混合原料;
S2、将混合原料在真空度小于10-3mbar的真空条件下,封装于石英管内;
S3、将装有混合原料的石英管加热至温度T1使原料熔化,之后保持保持T1温度,恒温时间大于10小时,使熔体均匀;温度T1范围为700℃<T1<1000℃;
S4、将经过步骤S3的熔体以小于10℃/h的降温速度降温至温度T2,温度T2范围为410℃<T2<430℃,之后保持温度T2至2天以上;最后用离心机分离出窄带隙二维半导体化合物EuTe4的晶体。
4.一种权利要求1或2所述窄带隙二维半导体化合物EuTe4的制备方法,其特征在于,包括以下步骤:
S1将原料铕块和原料碲块按照1∶1的摩尔比例进行混合,得到混合原料,并进行研磨;
S2、将研磨后的混合原料在真空度小于10-3mbar的真空条件下,封装于石英管内;
S3、将装有混合原料的石英管加热至温度T3使原料熔化,之后保持保持T3温度,恒温时间大于20小时,之后自然冷却,得到EuTe化合物;温度T3范围为680℃<T1<900℃;
S4、取出EuTe化合物,向EuTe化合物中加入碲块进行混合得到混合料,EuTe化合物与碲块的质量比为1∶12~1∶30;将混合料在真空度小于10-3mbar的真空条件下封装于石英管内;
S5、将装有混合原料的石英管加热至温度T1使原料熔化,之后保持保持T1温度,恒温时间大于10小时,使熔体均匀;温度T1范围为700℃<T1<1000℃;
S6、将经过步骤S5的熔体以小于10℃/h的降温速度降温至温度T2,温度T2范围为410℃<T2<430℃,之后保持温度T2至2天以上;最后用离心机分离出窄带隙二维半导体化合物EuTe4的晶体。
5.一种权利要求1或2所述窄带隙二维半导体化合物EuTe4在光电探测器中的应用。
6.一种权利要求1或2所述窄带隙二维半导体化合物EuTe4在热电材料中的应用。
7.一种权利要求1或2所述窄带隙二维半导体化合物EuTe4在二维超晶格器件中的应用。
8.一种权利要求1或2所述窄带隙二维半导体化合物EuTe4在相变电子学器件中的应用。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010119194.2A CN111334864A (zh) | 2020-02-27 | 2020-02-27 | 一种窄带隙二维半导体化合物EuTe4、其制备方法及其应用 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010119194.2A CN111334864A (zh) | 2020-02-27 | 2020-02-27 | 一种窄带隙二维半导体化合物EuTe4、其制备方法及其应用 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN111334864A true CN111334864A (zh) | 2020-06-26 |
Family
ID=71179684
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010119194.2A Pending CN111334864A (zh) | 2020-02-27 | 2020-02-27 | 一种窄带隙二维半导体化合物EuTe4、其制备方法及其应用 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN111334864A (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2230013A1 (de) * | 1972-06-20 | 1974-01-17 | Siemens Ag | Verfahren zur herstellung von einkristallen aus reinen oder gemischten europium-chalkogeniden |
CN101673804A (zh) * | 2004-07-15 | 2010-03-17 | 韩国电子通信研究院 | 采用突变金属-绝缘体转变半导体材料的二端子半导体器件 |
CN106058032A (zh) * | 2016-05-31 | 2016-10-26 | 同济大学 | 一种高热电性能元素半导体热电材料及其制备方法 |
CN108346736A (zh) * | 2017-10-16 | 2018-07-31 | 同济大学 | 一种高性能银碲化合物热电半导体材料及其制备方法 |
CN109819680A (zh) * | 2017-09-20 | 2019-05-28 | 花王株式会社 | 光吸收层及其制造方法、分散液、光电转换元件和中间带型太阳能电池 |
-
2020
- 2020-02-27 CN CN202010119194.2A patent/CN111334864A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2230013A1 (de) * | 1972-06-20 | 1974-01-17 | Siemens Ag | Verfahren zur herstellung von einkristallen aus reinen oder gemischten europium-chalkogeniden |
CN101673804A (zh) * | 2004-07-15 | 2010-03-17 | 韩国电子通信研究院 | 采用突变金属-绝缘体转变半导体材料的二端子半导体器件 |
CN106058032A (zh) * | 2016-05-31 | 2016-10-26 | 同济大学 | 一种高热电性能元素半导体热电材料及其制备方法 |
CN109819680A (zh) * | 2017-09-20 | 2019-05-28 | 花王株式会社 | 光吸收层及其制造方法、分散液、光电转换元件和中间带型太阳能电池 |
CN108346736A (zh) * | 2017-10-16 | 2018-07-31 | 同济大学 | 一种高性能银碲化合物热电半导体材料及其制备方法 |
Non-Patent Citations (1)
Title |
---|
D. WU等: "Layered semiconductor EuTe4 with charge density wave order in square tellurium sheets" * |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Zdanowicz et al. | Semiconducting compounds of the AII BV group | |
Faizan et al. | Electronic, optical, and thermoelectric properties of perovskite variants A2BX6: Insight and design via first‐principles calculations | |
Murtaza et al. | Tailoring of band gap to tune the optical and thermoelectric properties of Sr1-xBaxSnO3 stannates for clean energy; probed by DFT | |
KR101431771B1 (ko) | 신규한 화합물 반도체 및 그 활용 | |
Song et al. | Enhanced carrier mobility and thermoelectric performance in Cu2FeSnSe4 diamond-like compound via manipulating the intrinsic lattice defects | |
Zeuthen et al. | Reconciling crystallographic and physical property measurements on thermoelectric lead sulfide | |
Khan et al. | Exploring the optoelectronic structure and thermoelectricity of recent photoconductive chalcogenides compounds, CsCdInQ 3 (Q= Se, Te) | |
EP2899763B1 (en) | Novel compound semiconductor and use thereof | |
EP3038175B1 (en) | Thermoelectric materials and their manufacturing method | |
Rani et al. | Computational investigation of inverse perovskite SbPX3 (X= Mg, Ca, and Sr) structured materials with applicability in green energy resources | |
Dong et al. | A quasi-one-dimensional bulk thermoelectrics with high performance near room temperature | |
Patel et al. | A comprehensive analysis on elastic, mechanical, thermodynamic and thermoelectric properties of PbSnO3: A density functional theory study | |
Yan et al. | Achieving high average power factor in tetrahedrite Cu12Sb4S13 via regulating electron-phonon coupling strength | |
Ma et al. | Non‐artificial Layered Heterostructure as Inch‐size Single Crystal for Shortwave Polarized‐Light Array Detector | |
Dong et al. | Low-temperature deposition of 2D SnS nanoflakes on PET substrates for flexible photodetectors with broadband response | |
CN111334864A (zh) | 一种窄带隙二维半导体化合物EuTe4、其制备方法及其应用 | |
JP2014520054A (ja) | 新規な化合物半導体及びその活用 | |
KR101380945B1 (ko) | 신규한 화합물 반도체 및 그 활용 | |
Jin et al. | Metal Sulfide Ag2S: Fabrication via Zone Melting Method and Its Thermoelectric Property | |
Gullu et al. | Influence of temperature on optical properties of electron-beam-evaporated ZnSe thin film | |
US9960334B2 (en) | Thermoelectric materials and their manufacturing method | |
Yang et al. | Roles of concentration-dependent Cu doping behaviors on the thermoelectric properties of n-type Mg3Sb1. 5Bi0. 5 | |
Mukherjee et al. | Group IV nanowires for carbon-free energy conversion | |
Seyidov et al. | Photoelectric activity of defects in La-doped layered TlInS2 crystals | |
Goto et al. | Band Anisotropy Generates Axis-Dependent Conduction Polarity of Mg3Sb2 and Mg3Bi2 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |