CN111334781A - Large-size composite seed crystal for aluminum nitride crystal growth and preparation method thereof - Google Patents

Large-size composite seed crystal for aluminum nitride crystal growth and preparation method thereof Download PDF

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Publication number
CN111334781A
CN111334781A CN202010312132.3A CN202010312132A CN111334781A CN 111334781 A CN111334781 A CN 111334781A CN 202010312132 A CN202010312132 A CN 202010312132A CN 111334781 A CN111334781 A CN 111334781A
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aluminum nitride
nitride film
seed crystal
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不公告发明人
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Harbin Keyou Semiconductor Industry Equipment and Technology Research Institute Co Ltd
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Harbin Keyou Semiconductor Industry Equipment and Technology Research Institute Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/342—Boron nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides

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  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention relates to a large-size composite seed crystal for aluminum nitride crystal growth and a preparation method thereof, belonging to the field of composite seed crystals and preparation methods thereof. In order to solve the problems that the growth of large-size aluminum nitride seed crystals is difficult and the existing conditions for growing aluminum nitride crystals are harsh in the prior art, the invention provides a large-size composite seed crystal for the growth of aluminum nitride crystals and a preparation method thereof. The large-size composite seed crystal is obtained by covering a layer of boron nitride film on the surface of a monocrystalline silicon substrate and then covering a layer of aluminum nitride film on the boron nitride film, and is in a disc shape and 6-18 inches in size. The preparation method comprises the following steps: ultrasonically cleaning a monocrystalline silicon substrate; preparing a boron nitride film on the surface of the monocrystalline silicon substrate by a CVD method; ultrasonic cleaning of the composite substrate; and preparing the aluminum nitride film on the surface of the boron nitride film by an MOCVD method. The method is applied to the growth of the aluminum nitride crystal, can solve the problem of scarcity of large-size aluminum nitride seed crystals, is convenient to operate and saves the cost.

Description

Large-size composite seed crystal for aluminum nitride crystal growth and preparation method thereof
Technical Field
The invention belongs to the field of composite seed crystals and preparation methods thereof, and particularly relates to a large-size composite seed crystal for aluminum nitride crystal growth and a preparation method thereof.
Background
The aluminum nitride belongs to one of third-generation semiconductor materials, has the excellent characteristics of high forbidden band width, high breakdown field strength, high thermal conductivity, high saturated electron drift rate, strong chemical stability and the like, and has wide application prospects in the aspects of high-temperature, high-frequency, high-power, radiation-resistant devices, deep ultraviolet photoelectronic devices and the like. Currently, the shortage of high quality aluminum nitride single crystal materials has limited the development of related high performance devices. The preparation of the aluminum nitride single crystal is mainly to grow and extend an aluminum nitride single crystal on an aluminum nitride seed crystal with corresponding size by using a Physical Vapor Transport (PVT) method. It can be said that the quality of the aluminum nitride single crystal is closely related to the quality of the aluminum nitride seed crystal. Since the development of aluminum nitride crystals began later in the third generation of semiconductor materials, aluminum nitride crystals developed worldwide at this stage are generally small in size (e.g., 2 inches), and the resulting aluminum nitride substrate and aluminum nitride seed crystal are also small in size. Because it is difficult to obtain high-quality aluminum nitride crystals of large size (e.g., 4 inches, 6 inches, 8 inches and more), the current approach of growing high-quality large-size aluminum nitride crystals directly from a single large-size aluminum nitride seed crystal is greatly limited. In addition, in the production of a large-sized aluminum nitride single crystal, a silicon carbide wafer is sometimes used as a substrate for growing an aluminum nitride single crystal. However, the conditions for growing aluminum nitride crystal are harsh, and usually in a high temperature environment above 2000 ℃, silicon atoms and carbon atoms separated from the silicon carbide substrate are coupled into aluminum nitride crystal lattices to form impurities, which may cause polycrystalline aluminum nitride to grow, i.e. the existing conditions for growing aluminum nitride crystal are harsh and difficult to operate.
Disclosure of Invention
In order to solve the problems that the growth of large-size aluminum nitride seed crystals is difficult and the existing conditions for growing aluminum nitride crystals are harsh in the prior art, the invention provides a large-size composite seed crystal for the growth of aluminum nitride crystals and a preparation method thereof.
The technical scheme of the invention is as follows:
a large-size composite seed crystal for growing aluminum nitride crystals is characterized in that the composite seed crystal is obtained by covering a layer of boron nitride film on the surface of a monocrystalline silicon substrate and then covering a layer of aluminum nitride film on the boron nitride film, and the composite seed crystal is in a circular disc shape and has the size of 6-18 inches.
Furthermore, the thickness of the boron nitride film is 1-5 μm.
Furthermore, the thickness of the aluminum nitride film is 10-50 μm.
A preparation method of large-size composite seed crystals for aluminum nitride crystal growth is characterized by comprising the following steps:
firstly, carrying out ultrasonic cleaning on a monocrystalline silicon substrate to obtain a cleaned monocrystalline silicon substrate;
secondly, preparing a boron nitride film on the surface of the cleaned monocrystalline silicon substrate obtained in the first step by a CVD method to obtain a composite substrate;
thirdly, carrying out ultrasonic cleaning on the composite substrate obtained in the second step to obtain a cleaned composite substrate;
fourthly, preparing an aluminum nitride film on the surface of the boron nitride film of the cleaned composite substrate obtained in the third step through an MOCVD method, and obtaining the composite seed crystal.
Further, in the step one, the monocrystalline silicon substrate is subjected to ultrasonic cleaning by using acetone, alcohol and distilled water, the ultrasonic cleaning frequency is 40KHz, the ultrasonic cleaning time is 10 minutes, and the ultrasonically cleaned monocrystalline silicon substrate is dried by blowing nitrogen.
Further, the heating temperature of the CVD method in the second step is 500 ℃, the pressure of the growth chamber is kept at 550Torr by introducing mixed gas of boron chloride and ammonia gas, the chemical reaction deposition time is 1 hour, the ratio of the boron chloride to the ammonia gas in the mixed gas is 1:1, and the gas flow is 2.0L/min.
Further, in the third step, the frequency of ultrasonic cleaning of the composite substrate is 40KHz, the time is 5 minutes, and the composite substrate after ultrasonic cleaning is dried by nitrogen.
Further, the heating temperature of the MOCVD method in the step four is 1200 ℃, the pressure of the growth chamber is kept at 50torr by introducing mixed gas of trimethylaluminum and ammonia gas, the chemical reaction deposition time is 5 hours, the ratio of the trimethylaluminum to the ammonia gas in the mixed gas is 1:1, and the gas flow is 2.5L/min.
The invention has the beneficial effects that:
(1) the composite seed crystal and the preparation method thereof provided by the invention can solve the problem of scarcity of large-size aluminum nitride seed crystals, and the aluminum nitride single crystal with the size of 6 inches or more than 8 inches can be prepared by using the composite seed crystal. The expense for purchasing the aluminum nitride seed crystal is saved.
(2) Compared with the existing substrate adopting a silicon carbide wafer as a substrate for growing the aluminum nitride single crystal, the silicon carbide single crystal substrate has the advantages of more convenient operation and cost saving. The monocrystalline silicon is easier to obtain, and the research and development technology of the large-scale monocrystalline silicon is relatively more perfect, so that the monocrystalline silicon substrate is selected as the substrate, and the required large-size aluminum nitride monocrystalline crystal can be obtained.
(3) The boron nitride film has chemical corrosion resistance and good high-temperature stability, can effectively prevent the mutual permeation between silicon atoms and aluminum nitride crystal lattices, and can improve the quality of crystals. Compared with the prior art, the method can solve the problem that carbon atoms and silicon atoms generated when the silicon carbide wafer is used as a substrate for growing the aluminum nitride single crystal are coupled and enter aluminum nitride crystal lattices to form impurity defects, and simultaneously, the single crystal silicon is prevented from being directly contacted with the aluminum nitride, so that the condition that the coefficient of thermal expansion mismatch is large is avoided, and the condition often causes cracks to be generated after the aluminum nitride single crystal grown by adopting the composite seed crystal of the silicon carbide and the aluminum nitride is cooled. The large-size composite seed crystal composed of the monocrystalline silicon substrate, the boron nitride film and the aluminum nitride film can obtain high-quality large-size aluminum nitride monocrystalline crystals.
(4) Simple operation and easy processing. The CVD and MOCVD instruments are adopted for operation in the processing process, the working procedures are simple and convenient, and the complex operation of processing and manufacturing the aluminum nitride substrate or the seed crystal from the aluminum nitride crystal through the working procedures of cutting, grinding, polishing and the like is avoided.
(5) The heating temperature in the prior art is reduced from more than 2000 ℃ to 1200 ℃, so that the operation safety is improved, the energy is saved, and the cost is saved.
Detailed Description
The technical solutions of the present invention are further described below with reference to the following examples, but the present invention is not limited thereto, and any modifications or equivalent substitutions may be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Example 1
Firstly, preparing composite seed crystals. The method comprises the following specific steps:
respectively ultrasonically cleaning a monocrystalline silicon substrate with a set size of 6 inches for 10 minutes by sequentially using acetone, alcohol and distilled water in an ultrasonic cleaning machine, wherein the ultrasonic cleaning frequency is 40KHz, and taking out and drying by using nitrogen after cleaning;
and (II) putting the cleaned monocrystalline silicon substrate as a base body into a CVD system device of an open-tube gas flow method, wherein the single side of the monocrystalline silicon substrate faces upwards. Vacuumizing the growth chamber, heating the silicon carbide substrate to 500 ℃ in a high-frequency induction mode, introducing mixed gas of boron chloride and ammonia gas, wherein the ratio of the boron chloride to the ammonia gas is 1:1, the gas flow is 2.0L/min, the pressure of the growth chamber is kept at 550Torr, the reaction gas is decomposed on the surface of a high-temperature matrix, and meanwhile, chemical reaction is carried out to deposit and form a film, and the deposition time is 1 hour. Obtaining a monocrystalline silicon substrate with a boron nitride film deposited on the upper surface after the experiment is finished;
thirdly, ultrasonically cleaning the monocrystalline silicon substrate deposited with the boron nitride film for 5 minutes again according to the first step, wherein the frequency of ultrasonic cleaning is 40KHz, and taking out the monocrystalline silicon substrate after cleaning and drying the monocrystalline silicon substrate by using nitrogen;
and (IV) putting the cleaned boron nitride-monocrystalline silicon composite material substrate into a growth chamber of a Metal Organic Chemical Vapor Deposition (MOCVD) system, exposing one surface of a boron nitride film upwards in the growth space, heating to 1200 ℃, introducing trimethyl aluminum and ammonia gas, wherein the ratio of the trimethyl aluminum to the ammonia gas is 1:1, the gas flow is 2.5L/min, keeping the pressure of the growth chamber at 50torr, using nitrogen as a carrier gas, depositing for 5 hours, and finally depositing an AlN film on the boron nitride, thereby obtaining the monocrystalline silicon-boron nitride-aluminum nitride composite seed crystal. The thickness of the boron nitride film was measured and the statistical results are shown in table 1 below; the thickness of the aluminum nitride film was measured and the statistical results are shown in Table 2 below.
And secondly, using the obtained composite seed crystal as a seed crystal for growing the crystal, adhering one surface of the monocrystalline silicon substrate to the crucible cover, using one surface of the aluminum nitride film as a growth interface, and preparing and obtaining the required 6-inch large-size aluminum nitride monocrystalline crystal by a PVT (physical vapor transport) method.
Example 2
8-inch single crystal silicon was selected as a substrate, and the procedure was the same as in example 1, whereby 8-inch large-sized aluminum nitride single crystal was finally obtained. Measuring the thickness of the boron nitride film in the composite seed crystal obtained in the step one, and obtaining a statistical result shown in the following table 1; the thickness of the aluminum nitride film was measured and the statistical results are shown in Table 2 below.
Example 3
The 12-inch single crystal silicon was selected as the substrate, and the procedure was the same as in example 1, whereby a 12-inch large-sized aluminum nitride single crystal was finally obtained. Measuring the thickness of the boron nitride film in the composite seed crystal obtained in the step one, and obtaining a statistical result shown in the following table 1; the thickness of the aluminum nitride film was measured and the statistical results are shown in Table 2 below.
Example 4
The 18-inch single crystal silicon was selected as the substrate, and the procedure was the same as in example 1, whereby 18-inch large-sized aluminum nitride single crystal was finally obtained. Measuring the thickness of the boron nitride film in the composite seed crystal obtained in the step one, and obtaining a statistical result shown in the following table 1; the thickness of the aluminum nitride film was measured and the statistical results are shown in Table 2 below.
Table thickness of boron nitride film 2
Serial number Thickness of
Example 1 2μm
Example 2 4μm
Example 3 3μm
Example 4 4μm
Thickness of aluminum nitride film 3
Serial number Thickness of
Example 1 9μm
Example 2 10μm
Example 3 10μm
Example 4 11μm
As can be seen from the first, second and other examples, the boron nitride film 2 has a thickness of 1 μm to 5 μm, and the aluminum nitride film 3 has a thickness of 10 μm to 50 μm.
The boron nitride film has chemical corrosion resistance and good high-temperature stability, can effectively prevent the mutual permeation between silicon atoms and aluminum nitride crystal lattices, and can improve the quality of crystals. Compared with the prior art, the method can solve the problem that carbon atoms and silicon atoms generated when the silicon carbide wafer is used as a substrate for growing the aluminum nitride single crystal are coupled and enter aluminum nitride crystal lattices to form impurity defects, and simultaneously, the single crystal silicon is prevented from being directly contacted with the aluminum nitride, so that the condition that the coefficient of thermal expansion mismatch is large is avoided, and the condition often causes cracks to be generated after the aluminum nitride single crystal grown by adopting the composite seed crystal of the silicon carbide and the aluminum nitride is cooled. The large-size composite seed crystal composed of the monocrystalline silicon substrate, the boron nitride film and the aluminum nitride film can obtain high-quality large-size aluminum nitride monocrystalline crystals.
The monocrystalline silicon is adopted as the substrate, the monocrystalline silicon belongs to a first-generation semiconductor material, the development is early, the industry tends to mature, and the monocrystalline silicon is still at the front of the development of new materials, the research and development of the large-size monocrystalline silicon substrate 1 are relatively more complete, and the large-size monocrystalline silicon substrate is divided into 6 inches, 8 inches, 12 inches, 18 inches and the like according to the diameter. The large-size monocrystalline silicon substrate is convenient to obtain and purchase. Compared with the existing substrate adopting the silicon carbide wafer as the aluminum nitride single crystal, the operation is more convenient by adopting the single crystal silicon as the substrate, and the cost is saved. The monocrystalline silicon is easier to obtain, and the research and development technology of the large-scale monocrystalline silicon is relatively more perfect, so that the monocrystalline silicon substrate is selected as the substrate, and the required large-size aluminum nitride monocrystalline crystal can be obtained.
The composite seed crystal and the preparation method thereof provided by the invention can solve the problem of scarcity of large-size aluminum nitride seed crystals, and the aluminum nitride single crystal with the size of 6 inches or more than 8 inches can be prepared by using the composite seed crystal. The expense for purchasing the aluminum nitride seed crystal is saved. The heating temperature in the prior art is reduced from more than 2000 ℃ to 1200 ℃, so that the operation safety is improved, the energy is saved, and the cost is saved.
Simple operation and easy processing. The CVD and MOCVD instruments are adopted for operation in the processing process, the working procedures are simple and convenient, and the complex operation of processing and manufacturing the aluminum nitride substrate or the seed crystal from the aluminum nitride crystal through the working procedures of cutting, grinding, polishing and the like is avoided.

Claims (8)

1. A large-size composite seed crystal for growing aluminum nitride crystals is characterized in that the composite seed crystal is obtained by covering a layer of boron nitride film on the surface of a monocrystalline silicon substrate and then covering a layer of aluminum nitride film on the boron nitride film, and the composite seed crystal is in a circular disc shape and has the size of 6-18 inches.
2. A large-sized composite seed crystal for aluminum nitride crystal growth according to claim 1, wherein the thickness of the boron nitride film is 1 μm to 5 μm.
3. The large-sized composite seed crystal for aluminum nitride crystal growth according to claim 1, wherein the aluminum nitride film has a thickness of 10 μm to 50 μm.
4. A preparation method of large-size composite seed crystals for aluminum nitride crystal growth is characterized by comprising the following steps:
firstly, carrying out ultrasonic cleaning on a monocrystalline silicon substrate to obtain a cleaned monocrystalline silicon substrate;
secondly, preparing a boron nitride film on the surface of the cleaned monocrystalline silicon substrate obtained in the first step by a CVD method to obtain a composite substrate;
thirdly, carrying out ultrasonic cleaning on the composite substrate obtained in the second step to obtain a cleaned composite substrate;
fourthly, preparing an aluminum nitride film on the surface of the boron nitride film of the cleaned composite substrate obtained in the third step through an MOCVD method, and obtaining the composite seed crystal.
5. The method for preparing a large-size composite seed crystal for aluminum nitride crystal growth according to claim 4, wherein the ultrasonic cleaning of the monocrystalline silicon substrate in the step one is performed with acetone, alcohol and distilled water at a frequency of 40KHz for 10 minutes, and the ultrasonically cleaned monocrystalline silicon substrate is dried by nitrogen.
6. The method for preparing a large-size composite seed crystal for aluminum nitride crystal growth according to claim 5, wherein the heating temperature of the CVD method in the second step is 500 ℃, the pressure of the growth chamber is maintained at 550Torr by introducing a mixed gas of boron chloride and ammonia gas, the chemical reaction deposition time is 1 hour, the ratio of boron chloride to ammonia gas in the mixed gas is 1:1, and the gas flow rate is 2.0L/min.
7. The method for preparing a large-size composite seed crystal for aluminum nitride crystal growth according to claim 6, wherein the ultrasonic cleaning of the composite substrate in the third step is performed at a frequency of 40KHz for 5 minutes, and the ultrasonically cleaned composite substrate is dried by blowing with nitrogen gas.
8. The method for preparing a large-size composite seed crystal for aluminum nitride crystal growth according to claim 7, wherein the MOCVD process of step four has a heating temperature of 1200 ℃, a pressure of 50torr is maintained in the growth chamber by introducing a mixed gas of trimethylaluminum and ammonia gas, a chemical reaction deposition time is 5 hours, a ratio of trimethylaluminum to ammonia gas in the mixed gas is 1:1, and a gas flow rate is 2.5L/min.
CN202010312132.3A 2020-04-20 2020-04-20 Large-size composite seed crystal for aluminum nitride crystal growth and preparation method thereof Pending CN111334781A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113957536A (en) * 2021-09-23 2022-01-21 奥趋光电技术(杭州)有限公司 Composite structure AlN seed crystal for PVT and preparation and application thereof
EP4312248A1 (en) * 2022-07-27 2024-01-31 Siltronic AG A heteroepitaxial wafer for the deposition of gallium nitride
CN117535788A (en) * 2024-01-10 2024-02-09 乾晶半导体(衢州)有限公司 Single crystal growth method

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101743346A (en) * 2007-07-13 2010-06-16 日本碍子株式会社 Method for producing group iii nitride single crystal
CN101978470A (en) * 2008-03-25 2011-02-16 匹克吉佳国际公司 Method for manufacturing a layer of gallium nitride or gallium and aluminum nitride
CN103022295A (en) * 2012-12-11 2013-04-03 广州市众拓光电科技有限公司 Aluminum nitride film growing on silicon substrate and preparation method and application thereof
CN105861987A (en) * 2016-05-19 2016-08-17 西安电子科技大学 Gallium nitride growing method based on hexagonal boron nitride and magnetron-sputtered aluminum nitride
KR20190086978A (en) * 2018-01-15 2019-07-24 한국세라믹기술원 Method for AlN growth on Sapphire seed crystal
CN110211869A (en) * 2019-05-28 2019-09-06 北京大学 Utilize the method for stress in two-dimentional boron nitride insert layer relaxation nitride epitaxial structure
WO2019246515A1 (en) * 2018-06-22 2019-12-26 Massachusetts Institute Of Technology Systems and methods for growth of silicon carbide over a layer comprising graphene and/or hexagonal boron nitride and related articles
CN110670138A (en) * 2018-07-03 2020-01-10 中国科学院物理研究所 Composite seed crystal for aluminum nitride single crystal growth and preparation method thereof

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101743346A (en) * 2007-07-13 2010-06-16 日本碍子株式会社 Method for producing group iii nitride single crystal
CN101978470A (en) * 2008-03-25 2011-02-16 匹克吉佳国际公司 Method for manufacturing a layer of gallium nitride or gallium and aluminum nitride
CN103022295A (en) * 2012-12-11 2013-04-03 广州市众拓光电科技有限公司 Aluminum nitride film growing on silicon substrate and preparation method and application thereof
CN105861987A (en) * 2016-05-19 2016-08-17 西安电子科技大学 Gallium nitride growing method based on hexagonal boron nitride and magnetron-sputtered aluminum nitride
KR20190086978A (en) * 2018-01-15 2019-07-24 한국세라믹기술원 Method for AlN growth on Sapphire seed crystal
WO2019246515A1 (en) * 2018-06-22 2019-12-26 Massachusetts Institute Of Technology Systems and methods for growth of silicon carbide over a layer comprising graphene and/or hexagonal boron nitride and related articles
CN110670138A (en) * 2018-07-03 2020-01-10 中国科学院物理研究所 Composite seed crystal for aluminum nitride single crystal growth and preparation method thereof
CN110211869A (en) * 2019-05-28 2019-09-06 北京大学 Utilize the method for stress in two-dimentional boron nitride insert layer relaxation nitride epitaxial structure

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113957536A (en) * 2021-09-23 2022-01-21 奥趋光电技术(杭州)有限公司 Composite structure AlN seed crystal for PVT and preparation and application thereof
EP4312248A1 (en) * 2022-07-27 2024-01-31 Siltronic AG A heteroepitaxial wafer for the deposition of gallium nitride
WO2024023004A1 (en) * 2022-07-27 2024-02-01 Siltronic Ag A heteroepitaxial wafer for the deposition of gallium nitride
CN117535788A (en) * 2024-01-10 2024-02-09 乾晶半导体(衢州)有限公司 Single crystal growth method
CN117535788B (en) * 2024-01-10 2024-04-05 乾晶半导体(衢州)有限公司 Single crystal growth method

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Application publication date: 20200626