CN111326409A - Laser lift-off method and light emitting diode device epitaxial structure on sapphire substrate - Google Patents
Laser lift-off method and light emitting diode device epitaxial structure on sapphire substrate Download PDFInfo
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- CN111326409A CN111326409A CN201811536963.8A CN201811536963A CN111326409A CN 111326409 A CN111326409 A CN 111326409A CN 201811536963 A CN201811536963 A CN 201811536963A CN 111326409 A CN111326409 A CN 111326409A
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Abstract
The invention provides a laser lift-off method and a light emitting diode device epitaxial structure on a sapphire substrate, and solves the problem of low product yield caused by shock wave in the process of laser lift-off of the sapphire substrate in the prior art. The laser lift-off method comprises growing a sacrificial layer on a sapphire substrate, wherein the sacrificial layer comprises a nitride semiconductor layer; injecting ions into the sacrificial layer, wherein the ions are reductive ions and are heated to be combined with electrons in the nitriding semiconductor layer to generate gas; growing a light-emitting diode device epitaxial structure on the surface of the sacrificial layer; and irradiating the sacrificial layer through the sapphire substrate by using laser to decompose the sacrificial layer so as to separate the sapphire substrate from the epitaxial structure of the light-emitting diode device.
Description
Technical Field
The invention relates to the technical field of light emitting diode preparation, in particular to a laser stripping method and a light emitting diode device epitaxial structure on a sapphire substrate for substrate stripping by applying the method.
Background
In the fabrication process of the light emitting diode, the sapphire substrate is usually removed by using a laser lift-off technique to transfer the light emitting diode device epitaxial structure onto a target substrate. Because shock waves can be generated at a stripping interface during laser irradiation, and the shock waves can generate GP-level shock pressure, cracks occur on an epitaxial structure of the light-emitting diode device, the product fails, and the product yield is reduced.
Disclosure of Invention
In view of this, embodiments of the present invention are directed to providing a laser lift-off method and an epitaxial structure of a light emitting diode device on a sapphire substrate, so as to solve the problem of low yield of products caused by impact on a waveguide in the process of laser lift-off of a sapphire substrate in the prior art.
One aspect of the present invention provides a laser lift-off method, including: growing a sacrificial layer on the sapphire substrate, wherein the sacrificial layer comprises a nitride semiconductor layer; injecting ions into the sacrificial layer, wherein the ions are reductive ions and are heated to be combined with electrons in the nitriding semiconductor layer to generate gas; growing a light-emitting diode device epitaxial structure on the surface of the sacrificial layer; and irradiating the sacrificial layer through the sapphire substrate by using laser to decompose the sacrificial layer so as to separate the sapphire substrate from the epitaxial structure of the light-emitting diode device.
Optionally, implanting ions in the sacrificial layer comprises: ions are uniformly implanted into the sacrificial layer so that the ion concentration in the sacrificial layer is the same.
Optionally, the implanted ion concentration is 1 × 1015～1×1018Ions/cm2。
Optionally, implanting ions in the sacrificial layer comprises: the sacrificial layer comprises first regions and second regions which are alternately arranged; and implanting ions into the first region and the second region respectively by using a mask so that the ion concentration of the first region is higher than that of the second region.
Optionally, the growing the light emitting diode device epitaxial structure on the surface of the sacrificial layer includes: and growing a light emitting diode device epitaxial structure on the surface of the second area of the sacrificial layer.
Optionally, implanting ions in the sacrificial layer comprises: ions are implanted into the sacrificial layer at a predetermined depth to form a contact layer and an ion implanted layer which are stacked one on top of the other.
Alternatively, the nitride-based semiconductor layer includes a gallium nitride layer or an aluminum nitride layer.
Optionally, the ions include hydrogen ions, ammonia ions, argon ions.
According to another aspect of the present invention, there is also provided a light emitting diode device epitaxial structure on a sapphire substrate, including: a sapphire substrate; a light emitting diode device epitaxial structure grown on a sapphire substrate; and the sacrificial layer is positioned between the sapphire substrate and the light-emitting diode device epitaxial structure, comprises implanted ions which are reducing ions and is heated to be combined with electrons in the nitriding semiconductor layer to generate gas.
Optionally, the concentration of ions in the sacrificial layer is the same.
Optionally, the sacrificial layer includes a first region and a second region arranged at intervals, and the ion concentration of the first region is different from that of the second region.
According to the laser lift-off method and the light emitting diode device epitaxial structure on the sapphire substrate, provided by the invention, ions are injected into the sacrificial layer, so that the strength of the sacrificial layer is reduced, the sacrificial layer is more likely to generate decomposition reaction under laser irradiation, and therefore, laser with lower strength can be used for lift-off, namely, the strength threshold of the laser is reduced, further, the damage caused by shock waves generated in the laser lift-off process can be reduced, and the product yield is improved.
Drawings
Fig. 1 is a flowchart illustrating a laser lift-off method according to an embodiment of the present invention.
Fig. 2 a-2 d are schematic structural diagrams of devices sequentially formed during a laser lift-off process performed according to the method shown in fig. 1 according to an embodiment of the present invention.
Fig. 3 is a flowchart illustrating a laser lift-off method according to another embodiment of the present invention.
Fig. 4 a-4 b are schematic views of a device structure formed during a laser lift-off process performed according to the method shown in fig. 3 according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a flowchart illustrating a laser lift-off method according to an embodiment of the present invention. As shown in fig. 1, the laser lift-off method 100 includes:
step S110 is to grow a sacrificial layer on the sapphire substrate, wherein the sacrificial layer includes a nitride-based semiconductor layer.
The nitride-based semiconductor layer is a semiconductor film layer that can generate nitrogen gas by decomposition reaction under laser irradiation, and may be, for example, a gallium nitride layer or an aluminum nitride layer.
Step S120 is to implant ions, which are reducing ions, into the sacrificial layer, and generate gas by heat and electron combination in the nitride semiconductor layer.
The ions here may be, for example, hydrogen ions, ammonia ions, argon ions, and any other rare gas ions.
Step S130, growing an epitaxial structure of the light emitting diode device on the surface of the sacrificial layer. The light emitting diode device epitaxial structure comprises an n-type gallium nitride layer, an active layer, a p-type gallium nitride layer and a contact layer, wherein the n-type gallium nitride layer, the active layer and the p-type gallium nitride layer are sequentially stacked, and the contact layer is positioned between a sacrificial layer and the n-type gallium nitride layer.
Step S140, the sacrificial layer is irradiated with laser through the sapphire substrate to decompose the sacrificial layer, so as to separate the sapphire substrate from the light emitting diode device epitaxial structure.
The sapphire substrate and the sacrificial layer have different absorption efficiency for laser, so that laser with a specific wavelength is inevitably present, the substrate can be penetrated without any influence on the laser (namely, the substrate is transparent for the laser with the specific wavelength), but the sacrificial layer can be subjected to decomposition reaction, for example, the sacrificial layer of a nitride semiconductor material can be decomposed to generate nitrogen under the irradiation of the laser with the specific wavelength, and therefore, the separation between the sapphire substrate and the epitaxial structure of the light-emitting diode device is realized.
For example, when the sapphire substrate 11 has a band gap energy of 9.9eV, and when the sacrificial layer 12 is made of gallium nitride, since the band gap energy of gallium nitride is 3.39eV, the gallium nitride layer may be irradiated with laser light having a photon energy of 5eV (between the sapphire substrate and gallium nitride) and a wavelength of 248nm through the sapphire substrate 11, so that the gallium nitride layer undergoes a decomposition reaction, thereby peeling the sapphire substrate 11. When the material of the sacrificial layer 12 is gallium nitride, the band gap energy of aluminum nitride is 6.1eV, and the aluminum nitride layer may be irradiated with a laser beam having a photon energy of 6.4eV (between the sapphire substrate and the gallium nitride layer) and a wavelength of 193nm to decompose the aluminum nitride layer, thereby peeling the sapphire substrate 11.
According to the laser lift-off method provided by this embodiment, by implanting ions into the sacrificial layer, when laser light is irradiated to the sacrificial layer, the ions are combined with electrons in the nitride-based semiconductor layer to generate a gas, and the gas escapes, thereby forming a microcavity structure in the sacrificial layer. In this case, on the one hand, the ions absorb electrons in the nitride-based semiconductor layer, so that the stable structure of the nitride-based semiconductor layer is destroyed; on the other hand, the generation of the microcavity structure loosens the nitride-based semiconductor structure, and the combined action of the two factors relatively reduces the strength of the nitride-based semiconductor layer, namely reduces the strength of the sacrificial layer.
The strength of the sacrificial layer is reduced, so that the sacrificial layer is easy to decompose under the irradiation of laser, the laser with lower strength can be used for stripping, namely, the strength threshold of the laser is reduced, the damage caused by shock waves generated in the laser stripping process can be reduced, and the product yield is improved.
Fig. 2 a-2 d are schematic structural diagrams of devices sequentially formed during a laser lift-off process performed according to the method shown in fig. 1 according to an embodiment of the present invention.
According to step S110, referring to fig. 2a, a sacrificial layer, which is a gallium nitride sacrificial layer 12, is first grown on the sapphire substrate 11.
According to step S120, referring to fig. 2b, ions, which are hydrogen ions, are implanted into the gallium nitride sacrificial layer 12.
According to step S130, referring to fig. 2c, an led device epitaxial structure 13 is grown on the surface of the gan sacrificial layer 12.
Specifically, growing the light emitting diode device epitaxial structure 13 on the surface of the gallium nitride sacrificial layer 12 may include: sequentially growing a contact layer 131, an n-type gallium nitride layer, an active layer and a p-type gallium nitride layer on the surface of the gallium nitride sacrificial layer 12; then etching an isolation groove 132 on the surface of the p-type gallium nitride layer until the sacrificial layer 12 is exposed so as to form light emitting diode device epitaxial structures 13 which are arranged at intervals; finally, a passivation layer 134, such as a silicon nitride layer, is deposited on the top and side surfaces of the led device epitaxial structure 13, and the passivation layer 134 is used to provide a sealed working environment for the led device epitaxial structure, and isolate it from the surrounding acid-base environment, water molecules, oxygen, and the like.
According to step S140, referring to fig. 2d, the surface of the sapphire substrate 11 is scanned with a laser, and the laser penetrates through the sapphire substrate 11 to irradiate the sacrificial gallium nitride layer 12 to decompose, so as to separate the sapphire substrate 11 and the light emitting diode device epitaxial structure 13.
According to the laser lift-off method provided by the embodiment, hydrogen ions are implanted into the gallium nitride sacrificial layer 12, and when laser light is irradiated to the gallium nitride sacrificial layer 12, once the hydrogen ions are heated, the hydrogen ions are combined with electrons in the gallium nitride sacrificial layer 12 to generate hydrogen gas to overflow, so that a microcavity structure is formed in the sacrificial layer. In this case, on the one hand, the stable structure of the sacrificial gallium nitride layer 12 is destroyed because the hydrogen ions absorb electrons in the sacrificial gallium nitride layer 12; on the other hand, the generation of the microcavity structure loosens the structure of the sacrificial gallium nitride layer 12, and the combined action of the two factors causes the strength of the sacrificial gallium nitride layer 12 to be relatively reduced. The strength of the sacrificial layer is reduced, so that the sacrificial layer is easy to decompose under the irradiation of laser, the laser with lower strength can be used for stripping, namely, the strength threshold of the laser is reduced, the damage caused by shock waves generated in the laser stripping process can be reduced, and the product yield is improved.
In one embodiment, referring to fig. 2c, when the sacrificial layer 12 and the contact layer 131 in the light emitting diode device epitaxial structure 13 are film layers of the same material, for example, when the sacrificial layer 12 and the contact layer 131 are both made of gallium nitride, the sacrificial layer 12 and the contact layer 131 may be prepared at one time.
Specifically, step S120 and step S130 are implemented together as: firstly, implanting ions into the sacrificial layer 12 according to a predetermined depth to form a contact layer 131 and an ion implanted layer which are stacked up and down, wherein the ion implanted layer is the sacrificial layer in the laser lift-off process; secondly, an n-type gallium nitride layer, an active layer and a p-type gallium nitride layer are sequentially prepared on the contact layer 131; and finally forming the light emitting diode device epitaxial structure 13 according to the subsequent preparation process of the step S130.
Thus, the ion implantation layer (corresponding to the sacrificial layer 12) and the contact layer 131 can be prepared at one time, and the step of depositing the contact layer 131 in the process of preparing the epitaxial structure 13 of the light emitting diode device is omitted.
Those skilled in the art will appreciate that in this case, the thickness of the gallium nitride layer deposited on the sapphire substrate 11 should be the sum of the thicknesses of the sacrificial layer 12 and the gallium nitride contact layer 131.
In one embodiment, as shown in fig. 2b, implanting ions in the sacrificial layer 12 according to step S120 comprises: ions are uniformly implanted in the sacrificial layer 12 so that the ion concentration in the sacrificial layer 12 is the same. In this case, the sapphire substrate 11 can be peeled off by constant-speed scanning with a laser beam of constant intensity, which is easy for industrialization.
Considering that when the concentration of the implanted ions is too high, the formed micro-cavity is too much, the sapphire substrate can directly fall off during subsequent heating, and cannot provide a supporting function for the epitaxial structure 13 of the subsequent light emitting diode device, and when the concentration of the implanted ions is too low, the formed micro-cavity is too little to achieve the effect of reducing the laser threshold value, therefore, in one embodiment, the concentration of the implanted ions is 1 × 1015～1×1018Ions/cm2(Ions/cm2Representing the number of ions distributed per square centimeter of area) so that the support effect and the threshold reduction requirements can be met simultaneously.
Fig. 3 is a flowchart illustrating a laser lift-off method according to another embodiment of the present invention. As can be seen from a comparison of fig. 1 and 3, the laser lift-off method 300 provided according to the present embodiment differs from the laser lift-off method 100 shown in fig. 1 only in the second step. The second step in this embodiment, step S320, includes: the sacrificial layer comprises a first area and a second area which are alternately arranged, and the first area and the second area are respectively implanted with ions by adopting a mask so as to enable the ion concentration of the first area and the ion concentration of the second area to be different.
The ions with different concentrations are injected into the first area and the second area which are alternately arranged, for example, the ion concentration of the first area is higher than that of the second area, and the second area is less prone to decomposition compared with the first area due to the fact that the ion concentration of the second area is low. And simultaneously, the gas shock wave further peels off the second region so as to completely peel off the sapphire substrate of the second region, namely the sapphire substrate of the second region is peeled off by sequentially carrying out laser irradiation and gas shock.
According to the laser lift-off method provided by the embodiment, on one hand, by implanting ions into the sacrificial layer, the laser intensity threshold is reduced, and the principle of achieving the effect can refer to the analysis process of the laser lift-off method 100 shown in fig. 1; on the other hand, ions with different concentrations are injected into the adjacent region of the sacrificial layer, so that the damage of shock waves generated in the laser stripping process to the epitaxial structure of the light-emitting diode device is reduced, and the product yield is improved.
Fig. 4 a-4 b are schematic views of a device structure formed during a laser lift-off process performed according to the method shown in fig. 3 according to an embodiment of the present invention.
Referring to fig. 4a, first, according to step S310, a sacrificial layer, which is a gallium nitride sacrificial layer 42, is grown on the sapphire substrate 41. Then, according to step S320, the gallium nitride sacrificial layer 42 is divided into the first region 421 and the second region 422 which are alternately arranged, and hydrogen ions are implanted into the first region 421 and the second region 422 respectively by using a mask, so that the hydrogen ion concentration of the first region 421 is higher than that of the second region 422.
Referring to fig. 4b, according to step S330, an led device epitaxial structure 43 is grown on the surface of the second region 422 of the gan sacrificial layer 42.
Specifically, growing the light emitting diode device epitaxial structure 43 on the surface of the gallium nitride sacrificial layer 42 may include: sequentially growing a contact layer, an n-type gallium nitride layer, an active layer and a p-type gallium nitride layer on the surface of the gallium nitride sacrificial layer 42; then, etching an isolation groove 432 on the surface of the p-type gallium nitride layer corresponding to the first region 421 of the gallium nitride sacrificial layer 42 until the sacrificial layer 42 is exposed, that is, the light emitting diode device epitaxial structure 43 corresponds to the second region 422 with low ion concentration in the gallium nitride sacrificial layer 42, so as to form the light emitting diode device epitaxial structures 43 arranged at intervals; finally, a passivation layer 434, such as a silicon nitride layer, is deposited on the top and side surfaces of the led device epitaxial structure 43, and the passivation layer 434 is used to provide a sealed working environment for the led device epitaxial structure 43, and isolate it from the surrounding acid-base environment, water molecules, oxygen, and the like.
According to step S340, the surface of the sapphire substrate 41 is scanned with laser light that penetrates the sapphire substrate 41 to irradiate the gallium nitride sacrificial layer 42 to decompose, so as to separate the sapphire substrate 41 and the light emitting diode device epitaxial structure 43.
According to the laser lift-off method provided by the embodiment, since the gas shock wave generated by laser irradiation can be buffered by using the cavity in the region with low ion concentration, the damage of the shock wave to the light emitting diode device epitaxial structure 43 can be further reduced by arranging the light emitting diode device epitaxial structure 43 in the region with low ion concentration in the gallium nitride sacrificial layer 42, so that the product yield is further improved.
The invention also provides a light emitting diode device epitaxial structure on a sapphire substrate, as shown in fig. 2c, the light emitting diode device epitaxial structure 10 comprises a sapphire substrate 11, a light emitting diode device epitaxial structure 13 grown on the sapphire substrate 11, and a sacrificial layer 12 positioned between the sapphire substrate 11 and the light emitting diode device epitaxial structure 13, wherein the sacrificial layer 12 comprises implanted ions which are reducing ions and are heated to be combined with electrons in a nitriding semiconductor layer to generate gas.
In one embodiment, the ion concentration in the sacrificial layer 12 is the same, as shown in FIG. 2 c.
In one embodiment, as shown in fig. 4b, the sacrificial layer 22 includes first regions 421 and second regions 422 alternately arranged, and the ion concentrations of the first regions 421 and the second regions 422 are different.
The detailed description of the light emitting diode device epitaxial structure on the sapphire substrate provided by the invention can refer to the description process of the method, and is not repeated herein.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and the like that are within the spirit and principle of the present invention are included in the present invention.
Claims (10)
1. A laser lift-off method, comprising:
growing a sacrificial layer on the sapphire substrate, wherein the sacrificial layer comprises a nitride semiconductor layer;
injecting ions into the sacrificial layer, wherein the ions are reductive ions and are heated to be combined with electrons in the nitriding semiconductor layer to generate gas;
growing a light-emitting diode device epitaxial structure on the surface of the sacrificial layer;
and irradiating the sacrificial layer through the sapphire substrate by using laser to decompose the sacrificial layer so as to separate the sapphire substrate from the light-emitting diode device epitaxial structure.
2. The laser lift off method of claim 1, wherein implanting ions in the sacrificial layer comprises:
and uniformly implanting ions into the sacrificial layer so that the ion concentration in the sacrificial layer is the same.
3. The laser lift off method of claim 2 wherein the implanted ion concentration is 1 × 1015～1×1018Ions/cm2。
4. The laser lift off method of claim 1, wherein implanting ions in the sacrificial layer comprises:
the sacrificial layer comprises first regions and second regions which are alternately arranged;
and respectively implanting ions into the first region and the second region by using a mask so that the ion concentration of the first region is higher than that of the second region.
5. The laser lift off method of claim 4, wherein growing a light emitting diode device epitaxial structure on the surface of the sacrificial layer comprises:
and growing a light-emitting diode device epitaxial structure on the surface of the second area of the sacrificial layer.
6. The laser lift off method of claim 1, wherein implanting ions in the sacrificial layer comprises:
and implanting ions into the sacrificial layer according to a predetermined depth to form a contact layer and an ion implanted layer which are stacked one on top of the other.
7. The laser lift-off method according to any one of claims 1 to 6, wherein the nitride-based semiconductor layer comprises a gallium nitride layer or an aluminum nitride layer; and/or the presence of a gas in the gas,
the ions include hydrogen ions, ammonia ions, and argon ions.
8. An epitaxial structure of a light emitting diode device on a sapphire substrate, comprising:
a sapphire substrate;
a light emitting diode device epitaxial structure grown on the sapphire substrate; and
and the sacrificial layer is positioned between the sapphire substrate and the light-emitting diode device epitaxial structure, comprises implanted ions, is reductive ions, and is heated to be combined with electrons in the nitriding semiconductor layer to generate gas.
9. The light emitting diode device epitaxial structure on sapphire substrate according to claim 8, wherein the concentration of the ions in the sacrificial layer is the same.
10. The light emitting diode device epitaxial structure on a sapphire substrate of claim 8, wherein the sacrificial layer comprises a first region and a second region arranged at intervals, and the ion concentration of the first region is different from that of the second region.
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| CN112582506A (en) * | 2020-12-09 | 2021-03-30 | 苏州芯聚半导体有限公司 | Light emitting diode substrate stripping method and light emitting diode array |
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| US20120168768A1 (en) * | 2010-12-30 | 2012-07-05 | Lextar Electronics Corporation | Semiconductor structures and method for fabricating the same |
| US20180248070A1 (en) * | 2013-06-18 | 2018-08-30 | John Farah | Laser epitaxial lift-off of high efficiency solar cell |
| US20170005224A1 (en) * | 2015-07-01 | 2017-01-05 | Sensor Electronic Technology, Inc. | Substrate Structure Removal |
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| CN112582506A (en) * | 2020-12-09 | 2021-03-30 | 苏州芯聚半导体有限公司 | Light emitting diode substrate stripping method and light emitting diode array |
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