CN111324196B - Memory operation frequency adjusting method and device, storage medium and electronic equipment - Google Patents
Memory operation frequency adjusting method and device, storage medium and electronic equipment Download PDFInfo
- Publication number
- CN111324196B CN111324196B CN202010078499.3A CN202010078499A CN111324196B CN 111324196 B CN111324196 B CN 111324196B CN 202010078499 A CN202010078499 A CN 202010078499A CN 111324196 B CN111324196 B CN 111324196B
- Authority
- CN
- China
- Prior art keywords
- memory
- frequency
- working state
- adjusting
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/26—Power supply means, e.g. regulation thereof
- G06F1/32—Means for saving power
- G06F1/3203—Power management, i.e. event-based initiation of a power-saving mode
- G06F1/3234—Power saving characterised by the action undertaken
- G06F1/324—Power saving characterised by the action undertaken by lowering clock frequency
Abstract
The disclosure provides a memory operation frequency adjusting method, a memory operation frequency adjusting device, a storage medium and electronic equipment, and relates to the technical field of terminal control. The memory operation frequency adjusting method comprises the following steps: monitoring the working state of the electronic equipment; if the working state is the working state of the memory running frequency to be adjusted, determining the memory running frequency corresponding to the working state; and determining the memory adjusting frequency of the electronic equipment by combining the memory operating frequency corresponding to the working state, and adjusting the current memory operating frequency of the electronic equipment to be the memory adjusting frequency. The present disclosure may optimize performance and power consumption of an electronic device.
Description
Technical Field
The present disclosure relates to the field of terminal control technologies, and in particular, to a memory operating frequency adjusting method, a memory operating frequency adjusting apparatus, a computer-readable storage medium, and an electronic device.
Background
At present, in order to meet the continuously improved use requirements and good interaction experience of users, the performance requirements on electronic equipment are higher and higher. While high-performance hardware is continuously developed, the overall performance of the electronic equipment can be improved through a software strategy.
The overall performance of an electronic device is often improved primarily by increasing the frequency of the electronic device processor. However, under the condition of higher complexity of the application program, the requirement of the application program on the comprehensive performance of the device cannot be met by simply increasing the frequency of the processor.
Disclosure of Invention
The present disclosure provides a memory operation frequency adjustment method, a memory operation frequency adjustment device, a computer-readable storage medium, and an electronic device, thereby overcoming a problem of poor performance of the electronic device at least to a certain extent.
According to a first aspect of the present disclosure, a method for adjusting a memory operating frequency is provided, including: monitoring the working state of the electronic equipment; if the working state is the working state of the memory running frequency to be adjusted, determining the memory running frequency corresponding to the working state; and determining the memory adjusting frequency of the electronic equipment by combining the memory operating frequency corresponding to the working state, and adjusting the current memory operating frequency of the electronic equipment to be the memory adjusting frequency.
According to a second aspect of the present disclosure, there is provided a memory operating frequency adjusting apparatus, including: the state monitoring module is used for monitoring the working state of the electronic equipment; the frequency determination module is used for determining the memory running frequency corresponding to the working state if the working state is the working state of the memory running frequency to be adjusted; and the frequency adjusting module is used for determining the memory adjusting frequency of the electronic equipment by combining the memory operating frequency corresponding to the working state and adjusting the current memory operating frequency of the electronic equipment into the memory adjusting frequency.
According to a third aspect of the present disclosure, there is provided a computer-readable storage medium having stored thereon a computer program which, when executed by a processor, implements the memory operating frequency adjustment method described above.
According to a fourth aspect of the present disclosure, there is provided an electronic device comprising a processor; the memory is used for storing one or more programs, and when the one or more programs are executed by the processor, the processor is enabled to realize the memory operation frequency adjusting method.
In the technical solutions provided in some embodiments of the present disclosure, a working state of an electronic device is monitored, if the monitored working state is a working state of a memory operating frequency to be adjusted, a memory operating frequency corresponding to the working state is determined, a memory adjusting frequency of the electronic device is determined in combination with the memory operating frequency corresponding to the working state, and a current memory operating frequency of the electronic device is adjusted by using the memory adjusting frequency. According to the method and the device, the memory running frequency is adjusted, on one hand, high-performance application can be ensured to be matched with the high memory running frequency, and the processing efficiency is improved; on the other hand, it can be ensured that low performance applications match low memory operating frequencies to reduce unnecessary power consumption. That is, the performance and power consumption of the electronic device may be optimized using the scheme of the present disclosure.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure. It is to be understood that the drawings in the following description are merely exemplary of the disclosure, and that other drawings may be derived from those drawings by one of ordinary skill in the art without the exercise of inventive faculty. In the drawings:
fig. 1 is a schematic diagram illustrating an application scenario illustrating a memory operation frequency adjustment method or a memory operation frequency adjustment apparatus according to an embodiment of the disclosure;
FIG. 2 illustrates a schematic structural diagram of an electronic device suitable for use in implementing embodiments of the present disclosure;
fig. 3 schematically illustrates a flow chart of a memory operation frequency adjustment method according to an exemplary embodiment of the present disclosure;
FIG. 4 schematically illustrates a flow diagram of an overall process of adjusting memory operating frequency according to some embodiments of the present disclosure;
fig. 5 schematically illustrates a block diagram of a memory operation frequency adjustment apparatus according to an exemplary embodiment of the present disclosure;
fig. 6 schematically illustrates a block diagram of a memory operating frequency adjustment apparatus according to another exemplary embodiment of the present disclosure.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the disclosure. One skilled in the relevant art will recognize, however, that the subject matter of the present disclosure can be practiced without one or more of the specific details, or with other methods, components, devices, steps, and the like. In other instances, well-known technical solutions have not been shown or described in detail to avoid obscuring aspects of the present disclosure.
Furthermore, the drawings are merely schematic illustrations of the present disclosure and are not necessarily drawn to scale. The same reference numerals in the drawings denote the same or similar parts, and thus their repetitive description will be omitted. Some of the block diagrams shown in the figures are functional entities and do not necessarily correspond to physically or logically separate entities. These functional entities may be implemented in the form of software, or in one or more hardware modules or integrated circuits, or in different networks and/or processor devices and/or microcontroller devices.
The flow charts shown in the drawings are merely illustrative and do not necessarily include all of the steps. For example, some steps may be decomposed, and some steps may be combined or partially combined, so that the actual execution sequence may be changed according to the actual situation. In addition, all of the following terms "first" and "second" are used for distinguishing purposes only and should not be construed as limiting the present disclosure.
Fig. 1 shows a schematic application scenario diagram illustrating a memory operation frequency adjustment method or a memory operation frequency adjustment apparatus according to an embodiment of the present disclosure.
As shown in fig. 1, the electronic device 10 may monitor its own working state, where the working state may include an operation type of a background process of the electronic device 10, and specifically, the working state may include a game scene, a power-on scene, a network registration, an I/O operation, and the like. It should be understood that the working states described in the present disclosure may relate to not only the corresponding working states of the application software, but also the corresponding working states of the system software, and the present disclosure is not limited thereto.
After the electronic device 10 determines the current operating state, it may be determined whether the operating state is the operating state of the memory operating frequency to be adjusted, and if so, the memory operating frequency corresponding to the operating state may be determined by using the mapping relation table 101. The mapping relation table 101 stores a mapping relation between the operating state and the memory operating frequency, and the mapping relation table 101 is usually stored in a memory of the electronic device 10, so that the memory operating frequency can be adjusted even in the case of network outage.
Next, the electronic device 10 may determine a memory adjustment frequency of the electronic device according to the memory operation frequency corresponding to the current operating state, and adjust the current memory operation frequency of the electronic device to the memory adjustment frequency.
The memory operating frequency adjusting method of the present disclosure may be implemented by an electronic device, that is, the electronic device executes the steps of the memory operating frequency adjusting method of the exemplary embodiment of the present disclosure, in which case, the memory operating frequency adjusting apparatus of the present disclosure may be configured in the electronic device.
Those skilled in the art will readily appreciate that the present disclosure is not limited as to the type of electronic device, which may include, but is not limited to, cell phones, tablets, personal computers, smart wearable devices, and the like.
FIG. 2 shows a schematic diagram of an electronic device suitable for use in implementing exemplary embodiments of the present disclosure. It should be noted that the electronic device shown in fig. 2 is only an example, and should not bring any limitation to the functions and the scope of use of the embodiments of the present disclosure.
The electronic device of the present disclosure includes at least a processor and a memory for storing one or more programs, which when executed by the processor, cause the processor to implement the memory operation frequency adjustment method of the exemplary embodiments of the present disclosure.
Specifically, as shown in fig. 2, the electronic device 200 may include: a processor 210, an internal memory 221, an external memory interface 222, a Universal Serial Bus (USB) interface 230, a charging management Module 240, a power management Module 241, a battery 242, an antenna 1, an antenna 2, a mobile communication Module 250, a wireless communication Module 260, an audio Module 270, a speaker 271, a microphone 272, a microphone 273, an earphone interface 274, a sensor Module 280, a display 290, a camera Module 291, a pointer 292, a motor 293, a button 294, and a Subscriber Identity Module (SIM) card interface 295. Among other things, the sensor module 280 may include a depth sensor 2801, a pressure sensor 2802, a gyroscope sensor 2803, a barometric pressure sensor 2804, a magnetic sensor 2805, an acceleration sensor 2806, a distance sensor 2807, a proximity light sensor 2808, a fingerprint sensor 2809, a temperature sensor 2810, a touch sensor 2811, an ambient light sensor 2812, and a bone conduction sensor 2813, among others.
It is to be understood that the illustrated structure of the embodiment of the present application does not specifically limit the electronic device 200. In other embodiments of the present application, the electronic device 200 may include more or fewer components than shown, or combine certain components, or split certain components, or a different arrangement of components. The illustrated components may be implemented in hardware, software, or a combination of software and hardware.
Processor 210 may include one or more processing units, such as: the Processor 210 may include an Application Processor (AP), a modem Processor, a Graphics Processing Unit (GPU), an Image Signal Processor (ISP), a controller, a video codec, a Digital Signal Processor (DSP), a baseband Processor, and/or a Neural Network Processor (NPU), and the like. The different processing units may be separate devices or may be integrated into one or more processors. Additionally, a memory may be provided in processor 210 for storing instructions and data.
The USB interface 230 is an interface conforming to the USB standard specification, and may specifically be a MiniUSB interface, a microsusb interface, a USB type c interface, or the like. The USB interface 230 may be used to connect a charger to charge the electronic device 200, and may also be used to transmit data between the electronic device 200 and a peripheral device. And the earphone can also be used for connecting an earphone and playing audio through the earphone. The interface may also be used to connect other electronic devices, such as AR devices and the like.
The charge management module 240 is configured to receive a charging input from a charger. The charger may be a wireless charger or a wired charger. The power management module 241 is used for connecting the battery 242, the charging management module 240 and the processor 210. The power management module 241 receives the input of the battery 242 and/or the charging management module 240, and supplies power to the processor 210, the internal memory 221, the display screen 290, the camera module 291, the wireless communication module 260, and the like.
The wireless communication function of the electronic device 200 may be implemented by the antenna 1, the antenna 2, the mobile communication module 250, the wireless communication module 260, a modem processor, a baseband processor, and the like.
The mobile communication module 250 may provide a solution including 2G/3G/4G/5G wireless communication applied on the electronic device 200.
The Wireless Communication module 260 may provide a solution for Wireless Communication applied to the electronic device 200, including Wireless Local Area Networks (WLANs) (e.g., Wireless Fidelity (Wi-Fi) network), Bluetooth (BT), Global Navigation Satellite System (GNSS), Frequency Modulation (FM), Near Field Communication (NFC), Infrared (IR), and the like.
The electronic device 200 implements a display function through the GPU, the display screen 290, the application processor, and the like. The GPU is a microprocessor for image processing, and is connected to the display screen 290 and an application processor. The GPU is used to perform mathematical and geometric calculations for graphics rendering. Processor 210 may include one or more GPUs that execute program instructions to generate or alter display information.
The electronic device 200 may implement a shooting function through the ISP, the camera module 291, the video codec, the GPU, the display screen 290, the application processor, and the like. In some embodiments, the electronic device 200 may include 1 or N camera modules 291, where N is a positive integer greater than 1, and if the electronic device 200 includes N cameras, one of the N cameras is a main camera.
Internal memory 221 may be used to store computer-executable program code, including instructions. The internal memory 221 may include a program storage area and a data storage area. The external memory interface 222 may be used to connect an external memory card, such as a Micro SD card, to extend the memory capability of the electronic device 200.
The electronic device 200 may implement an audio function through the audio module 270, the speaker 271, the receiver 272, the microphone 273, the headphone interface 274, the application processor, and the like. Such as music playing, recording, etc.
The speaker 271, also called "horn", is used to convert the audio electrical signal into a sound signal. The electronic apparatus 200 can listen to music through the speaker 271 or listen to a handsfree phone call. The receiver 272, also called "earpiece", is used to convert the electrical audio signal into an acoustic signal. When the electronic device 200 receives a call or voice information, it can receive the voice by placing the receiver 272 close to the ear of the person. The microphone 273, also known as a "microphone," is used to convert sound signals into electrical signals. When making a call or transmitting voice information, the user can input a voice signal to the microphone 273 by sounding a voice signal near the microphone 273 through the mouth. The electronic device 200 may be provided with at least one microphone 273. The earphone interface 274 is used to connect wired earphones.
The depth sensor 2801 is used to acquire depth information of a scene with respect to a sensor included in the electronic device 200. The pressure sensor 2802 is used to sense a pressure signal and convert the pressure signal into an electrical signal. The gyro sensor 2803 may be used to determine a motion pose of the electronic device 200. The air pressure sensor 2804 is used to measure air pressure. The magnetic sensor 2805 includes a hall sensor. The electronic device 200 may detect the opening and closing of the flip holster using the magnetic sensor 2805. The acceleration sensor 2806 can detect the magnitude of acceleration of the electronic device 200 in various directions (typically three axes). The distance sensor 2807 is used to measure a distance. The proximity light sensor 2808 may include, for example, a Light Emitting Diode (LED) and a light detector, such as a photodiode. The fingerprint sensor 2809 is used to collect a fingerprint. The temperature sensor 2810 detects temperature. The touch sensor 2811 may pass the detected touch operation to an application processor to determine a touch event type. Visual output related to the touch operation may be provided through the display screen 290. The ambient light sensor 2812 is used to sense ambient light brightness. Bone conduction sensor 2813 may acquire a vibration signal.
The keys 294 include a power-on key, a volume key, and the like. The keys 294 may be mechanical keys. Or may be touch keys. The motor 293 may generate a vibration indication. The motor 293 may be used for both electrical vibration prompting and touch vibration feedback. Indicator 292 may be an indicator light that may be used to indicate a state of charge, a change in charge, or may be used to indicate a message, missed call, notification, etc. The SIM card interface 295 is used to connect a SIM card. The electronic device 200 interacts with the network through the SIM card to implement functions such as communication and data communication.
The present application also provides a computer-readable storage medium, which may be contained in the electronic device described in the above embodiments; or may exist separately without being assembled into the electronic device.
A computer readable storage medium may be, for example, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination of the foregoing. More specific examples of the computer readable storage medium may include, but are not limited to: an electrical connection having one or more wires, a portable computer diskette, a hard disk, a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing. In the present disclosure, a computer readable storage medium may be any tangible medium that can contain, or store a program for use by or in connection with an instruction execution system, apparatus, or device.
A computer readable storage medium may transmit, propagate, or transport a program for use by or in connection with an instruction execution system, apparatus, or device. Program code embodied on a computer readable storage medium may be transmitted using any appropriate medium, including but not limited to: wireless, wire, fiber optic cable, RF, etc., or any suitable combination of the foregoing.
The computer-readable storage medium carries one or more programs which, when executed by an electronic device, cause the electronic device to implement the method as described in the embodiments below.
The flowchart and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of systems, methods and computer program products according to various embodiments of the present disclosure. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that, in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams or flowchart illustration, and combinations of blocks in the block diagrams or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
The units described in the embodiments of the present disclosure may be implemented by software, or may be implemented by hardware, and the described units may also be disposed in a processor. Wherein the names of the elements do not in some way constitute a limitation on the elements themselves.
Fig. 3 schematically shows a flowchart of a memory operation frequency adjustment method according to an exemplary embodiment of the present disclosure. Referring to fig. 3, the method for adjusting the memory operating frequency may include the following steps:
and S32, monitoring the working state of the electronic equipment.
In an exemplary embodiment of the present disclosure, the operating state of the electronic device may be divided into a scene-class operating state and a behavior-class operating state, where the scene-class operating state may include an operating state with no or little external interaction, such as a power-on scene, a high-performance scene in a battery, a game scene, a desktop scene, a screen-off scene, and the like, where the external interaction may include, but is not limited to, interaction between the electronic device and a user, interaction between the electronic device and other devices or servers, and the like. Behavior class working states may include working states where there is external interaction, such as application launch, registering with a network, I/O operations, and the like.
According to some embodiments of the present disclosure, the electronic device may monitor its operating state in real time, for example, the operating state may be determined by a process running in its background.
According to other embodiments of the present disclosure, the electronic device may perform the monitoring task once every fixed period of time, and the monitoring task may last for another fixed period of time, for example, every half hour for 10 minutes. This is not particularly limited in the present exemplary embodiment.
According to further embodiments of the present disclosure, the electronic device may start monitoring the operating state of the electronic device at the moment when the operating state changes.
It should be noted that, the present disclosure does not limit the time when the electronic device monitors the operating state thereof.
Under the condition of monitoring the working state of the electronic equipment, if the electronic equipment is continuously in a working state within a preset time period, determining whether the working state is the working state of the memory running frequency to be adjusted. The preset time period may be preset, and may be set to 5 seconds, 10 seconds, or the like, for example. Therefore, resource waste caused by implementation of the scheme during short-time switching of the working state is avoided.
In an exemplary embodiment of the present disclosure, the operating state of the memory operating frequency to be adjusted may be a preset operating state. In one embodiment, the operating state may be an operating state set by a developer before the electronic device leaves a factory.
In another embodiment, the operating state of the memory operating frequency to be adjusted may be an operating state selected by a user during a boot process. That is to say, in the interface for determining the memory operation frequency to be adjusted corresponding to the boot guidance of the electronic device, each working state is provided for the user to select, and the working state selected by the user is determined as the working state of the memory operation frequency to be adjusted according to the present disclosure.
And S34, if the working state is the working state of the memory running frequency to be adjusted, determining the memory running frequency corresponding to the working state.
In a case where it is determined that the operating state monitored in step S32 is not the operating state of the memory operating frequency to be adjusted, a default memory operating frequency may be applied.
When the monitored working state is determined to be the working state of the content running frequency to be adjusted, the memory running frequency corresponding to the working state can be determined.
According to some embodiments of the present disclosure, a mapping relationship table between the operating state of the memory operating frequency to be adjusted and the memory operating frequency may be pre-constructed, and the mapping relationship table may be stored in the electronic device. And under the condition that the monitored working state is the working state of the content running frequency to be adjusted, determining the corresponding memory running frequency according to the mapping relation table.
In addition, the process of constructing the mapping relation table can be carried out on the server, and the mapping relation table is sent to the electronic equipment by the server after the construction is finished. The developer can construct a mapping relation according to the requirements of the working state and the generated influence.
Table 1 schematically shows a mapping relationship between the constructed scene class operating state and the memory operating frequency.
TABLE 1
| Scene type working state | Memory operating frequency |
| Startup scenario | Maximum ofFrequency of operation |
| High performance scenario in battery | Maximum operating frequency |
| Game scene | Maximum operating frequency |
| Desktop scene | Maintaining table frequency range |
| Scene of putting out screen | Minimum operating frequency |
Table 2 schematically shows a mapping relationship between the constructed behavior class operating state and the memory operating frequency.
TABLE 2
| Behavior class operating state | Memory operating frequency |
| Application launch | Maximum operating frequency |
| Registration network | Maximum operating frequency |
| I/O operations | Maximum operating frequency |
It should be understood that tables 1 and 2 only exemplarily show some working states and corresponding preset memory operating frequencies, however, it is easily understood by those skilled in the art that the working states are not limited thereto, and may also include a photographing state, a video playing state, and the like, and the corresponding preset memory operating frequencies may also be set to other values or ranges, which is not limited by the present disclosure.
In addition, the server or the electronic device may determine the corresponding memory operating frequency according to the memory read-write requirements in different working states, and construct the mapping relationship, for example, which is not limited in this disclosure.
And S36, determining the memory adjusting frequency of the electronic equipment by combining the memory operating frequency corresponding to the working state, and adjusting the current memory operating frequency of the electronic equipment into the memory adjusting frequency.
According to some embodiments of the present disclosure, the memory operating frequency corresponding to the operating state determined in step S34 is determined as a memory adjusting frequency of the electronic device, and the current memory operating frequency of the electronic device is adjusted as the memory adjusting frequency.
The overall process of adjusting the memory operating frequency of these embodiments is described with reference to fig. 4.
In step S402, the electronic device monitors a current operating state; in step S404, the electronic device determines whether the monitored operating state is the operating state of the operating frequency of the memory to be adjusted, if so, performs step S408, and if not, performs step S406.
In step S406, the electronic device uses a default memory operating frequency, that is, the prior art is maintained.
In step S408, the electronic device determines a memory operating frequency corresponding to the operating state by using a pre-configured mapping relationship table. In step S410, the current memory operating frequency is adjusted by using the corresponding memory operating frequency.
According to other embodiments of the present disclosure, after the memory operating frequency corresponding to the operating state is determined in step S34, first, the memory operating frequency corresponding to the operating state may be compared with a frequency threshold, where the frequency threshold may be set manually, and the present disclosure does not limit the specific value thereof. If the memory operating frequency corresponding to the working state is greater than the frequency threshold, detecting the equipment temperature of the electronic equipment, specifically, detecting the equipment temperature by using a temperature sensor built in the electronic equipment; and if the memory operating frequency corresponding to the working state is less than or equal to the frequency threshold, determining the memory operating frequency corresponding to the working state as the memory adjusting frequency of the electronic equipment, and adjusting the current memory operating frequency of the electronic equipment to the memory adjusting frequency.
Next, the memory operating frequency corresponding to the operating state determined in step S34 may be adjusted according to the detected device temperature, so as to obtain a memory adjustment frequency of the electronic device.
Specifically, a difference between the device temperature and the first temperature threshold may be calculated, and the memory operating frequency corresponding to the operating state may be adjusted according to the difference between the device temperature and the first temperature threshold. The first temperature threshold may be a higher or highest temperature in a normal operating temperature range of the electronic device, and is set to 30 degrees celsius, for example, however, it should be understood that the first temperature threshold may be set to a different value depending on the type of the electronic device, and the disclosure does not limit the specific value.
In one embodiment, if the difference between the device temperature and the first temperature threshold is less than or equal to 0, that is, the detected device temperature is less than the first temperature threshold, the memory operating frequency corresponding to the operating state is determined as the memory adjusting frequency of the electronic device, and the current memory operating frequency of the electronic device is adjusted to the memory adjusting frequency.
In another embodiment, the second temperature threshold is obtained if the device temperature differs from the first temperature threshold by more than 0. The second temperature threshold is greater than the first temperature threshold, and is indicative of a temperature that may affect normal use of the device or start of sharp decrease of performance of the device, that is, the second temperature threshold may be a limit temperature detected by an experiment of the electronic device, for example, the second temperature threshold is 40 degrees celsius.
If the detected device temperature is between the first temperature threshold and the second temperature threshold, the difference between the device temperature and the first temperature threshold may be determined as a first difference, the difference between the second temperature threshold and the first temperature threshold may be determined as a second difference, a quotient of the first difference and the second difference is calculated, and the frequency adjustment coefficient is determined by using the quotient of the first difference and the second difference.
Next, the memory operating frequency corresponding to the operating state determined in step S34 may be adjusted by using the frequency adjustment coefficient, and the adjusted frequency is used as the memory adjustment frequency.
For example, if the memory operating frequency corresponding to the operating state determined in step S34 is denoted as f0, the device temperature is denoted as t0, the first temperature threshold is denoted as t1, the second temperature threshold is denoted as t2, and the memory adjusting frequency is denoted as f, f may be expressed as follows:
wherein the content of the first and second substances,
the frequency adjustment parameter is expressed, and it is easily understood that the frequency adjustment parameter may also be expressed as
In addition, if the detected device temperature is greater than or equal to the second temperature threshold, the current memory operating frequency of the electronic device is adjusted to the minimum operating frequency of the memory, so that the power consumption of the device is reduced as much as possible.
It should be noted that the above-mentioned scheme for further determining the memory adjustment frequency by using the frequency adjustment coefficient is only an exemplary description, and both the scheme for determining the memory operating frequency by combining the device temperature and the scheme belong to the concept of the present invention.
In summary, based on the memory operation frequency adjustment method of the exemplary embodiment of the present disclosure, on one hand, it can be ensured that a high-performance application matches a high memory operation frequency, so as to improve processing efficiency; on the other hand, it can be ensured that low performance applications match low memory operating frequencies to reduce unnecessary power consumption. That is, the performance and power consumption of the electronic device may be optimized using the scheme of the present disclosure.
It should be noted that although the various steps of the methods of the present disclosure are depicted in the drawings in a particular order, this does not require or imply that these steps must be performed in this particular order, or that all of the depicted steps must be performed, to achieve desirable results. Additionally or alternatively, certain steps may be omitted, multiple steps combined into one step execution, and/or one step broken down into multiple step executions, etc.
Further, the present exemplary embodiment also provides a memory operating frequency adjusting apparatus applied to an electronic device.
Fig. 5 schematically illustrates a block diagram of a memory operation frequency adjustment apparatus according to an exemplary embodiment of the present disclosure. Referring to fig. 5, the memory operating frequency adjusting apparatus 5 according to an exemplary embodiment of the present disclosure may include a state monitoring module 51, a frequency determining module 53, and a frequency adjusting module 55.
Specifically, the state monitoring module 51 may be configured to monitor an operating state of the electronic device; the frequency determining module 53 may be configured to determine the memory operating frequency corresponding to the operating state if the operating state is the operating state of the memory operating frequency to be adjusted; the frequency adjustment module 55 may be configured to determine a memory adjustment frequency of the electronic device according to the memory operating frequency corresponding to the working state, and adjust the current memory operating frequency of the electronic device to the memory adjustment frequency.
On the one hand, the memory operation frequency adjusting device based on the disclosed exemplary embodiment can ensure that high-performance application is matched with high memory operation frequency so as to improve processing efficiency; on the other hand, it can be ensured that low performance applications match low memory operating frequencies to reduce unnecessary power consumption. That is, the performance and power consumption of the electronic device may be optimized using the scheme of the present disclosure.
According to an example embodiment of the present disclosure, the frequency adjustment module 55 may be configured to perform: comparing the memory running frequency corresponding to the working state with a frequency threshold; if the memory running frequency corresponding to the working state is greater than the frequency threshold, detecting the equipment temperature of the electronic equipment; and adjusting the memory operating frequency corresponding to the working state according to the equipment temperature to obtain the memory adjusting frequency of the electronic equipment.
According to an exemplary embodiment of the disclosure, the process of the frequency adjustment module 55 performing the adjustment of the memory operating frequency corresponding to the operating state according to the device temperature may be configured to perform: calculating a difference between the device temperature and a first temperature threshold; and adjusting the memory operating frequency corresponding to the working state according to the difference value between the equipment temperature and the first temperature threshold value.
According to an exemplary embodiment of the disclosure, the process of the frequency adjusting module 55 performing the adjustment on the memory operating frequency corresponding to the operating state according to the difference between the device temperature and the first temperature threshold may be configured to perform: if the difference value between the equipment temperature and the first temperature threshold is greater than 0, acquiring a second temperature threshold; wherein the second temperature threshold is greater than the first temperature threshold; under the condition that the equipment temperature is between a first temperature threshold and a second temperature threshold, determining a difference value between the equipment temperature and the first temperature threshold as a first difference value, determining a difference value between the second temperature threshold and the first temperature threshold as a second difference value, calculating a quotient of the first difference value and the second difference value, and determining a frequency adjustment coefficient by using the quotient of the first difference value and the second difference value; and adjusting the memory running frequency corresponding to the working state by using the frequency adjustment coefficient.
According to an exemplary embodiment of the present disclosure, the frequency adjustment module 55 may be further configured to perform: and if the equipment temperature is greater than or equal to the second temperature threshold, adjusting the current memory operating frequency of the electronic equipment to the minimum operating frequency of the memory.
According to an exemplary embodiment of the present disclosure, the status monitoring module 51 may be further configured to perform: under the condition of monitoring the working state of the electronic equipment, if the electronic equipment is continuously in a working state within a preset time period, determining whether the working state is the working state of the memory running frequency to be adjusted.
According to an exemplary embodiment of the present disclosure, referring to fig. 6, the memory operation frequency adjusting apparatus 6 may further include a mapping relation determining module 61, compared to the memory operation frequency adjusting apparatus 5.
Specifically, the mapping relation determining module 61 may be configured to perform: and a mapping relation table of the working state of the memory operating frequency to be adjusted and the memory operating frequency is constructed in advance and stored in the electronic equipment. In this case, the frequency determining module 53 may determine the memory operating frequency corresponding to the operating state of the memory operating frequency to be adjusted according to the mapping table.
Since each functional module of the memory operating frequency adjusting apparatus according to the embodiment of the present disclosure is the same as that in the embodiment of the method described above, it is not described herein again.
Through the above description of the embodiments, those skilled in the art will readily understand that the exemplary embodiments described herein may be implemented by software, or by software in combination with necessary hardware. Therefore, the technical solution according to the embodiments of the present disclosure may be embodied in the form of a software product, which may be stored in a non-volatile storage medium (which may be a CD-ROM, a usb disk, a removable hard disk, etc.) or on a network, and includes several instructions to enable a computing device (which may be a personal computer, a server, a terminal device, or a network device, etc.) to execute the method according to the embodiments of the present disclosure.
Furthermore, the above-described figures are merely schematic illustrations of processes included in methods according to exemplary embodiments of the present disclosure, and are not intended to be limiting. It will be readily understood that the processes shown in the above figures are not intended to indicate or limit the chronological order of the processes. In addition, it is also readily understood that these processes may be performed synchronously or asynchronously, e.g., in multiple modules.
It should be noted that although in the above detailed description several modules or units of the device for action execution are mentioned, such a division is not mandatory. Indeed, the features and functionality of two or more modules or units described above may be embodied in one module or unit, according to embodiments of the present disclosure. Conversely, the features and functions of one module or unit described above may be further divided into embodiments by a plurality of modules or units.
Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.
It will be understood that the present disclosure is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the present disclosure is to be limited only by the terms of the appended claims.
Claims (8)
1. A memory operation frequency adjusting method is applied to electronic equipment and is characterized by comprising the following steps:
monitoring the working state of the electronic equipment;
if the working state is the working state of the memory running frequency to be adjusted, determining the memory running frequency corresponding to the working state;
comparing the memory running frequency corresponding to the working state with a frequency threshold;
if the memory running frequency corresponding to the working state is greater than a frequency threshold, detecting the equipment temperature of the electronic equipment;
calculating a difference between the device temperature and a first temperature threshold;
adjusting the memory operating frequency corresponding to the working state according to the difference value between the equipment temperature and a first temperature threshold value to obtain the memory adjusting frequency of the electronic equipment;
and adjusting the current memory operating frequency of the electronic equipment to the memory adjusting frequency.
2. The method for adjusting the memory operating frequency according to claim 1, wherein the adjusting the memory operating frequency corresponding to the operating state according to the difference between the device temperature and the first temperature threshold includes:
if the difference value between the equipment temperature and the first temperature threshold is greater than 0, acquiring a second temperature threshold; wherein the second temperature threshold is greater than the first temperature threshold;
determining a difference between the device temperature and the first temperature threshold as a first difference, determining a difference between the second temperature threshold and the first temperature threshold as a second difference, and calculating a quotient of the first difference and the second difference, determining a frequency adjustment coefficient using the quotient of the first difference and the second difference, if the device temperature is between the first temperature threshold and the second temperature threshold;
and adjusting the memory operating frequency corresponding to the working state by using the frequency adjustment coefficient.
3. The method according to claim 2, wherein the method further comprises:
and if the equipment temperature is greater than or equal to the second temperature threshold, adjusting the current memory operating frequency of the electronic equipment to be the minimum operating frequency of the memory.
4. The method according to any one of claims 1 to 3, wherein in a case where the operating state of the electronic device is monitored, the method further includes:
and if the electronic equipment is continuously in a working state within a preset time period, determining whether the working state is the working state of the operating frequency of the memory to be adjusted.
5. The method according to claim 1, wherein the method further comprises:
a mapping relation table of the working state of the memory operation frequency to be adjusted and the memory operation frequency is constructed in advance and stored in the electronic equipment;
and determining the memory operating frequency corresponding to the working state of the memory operating frequency to be adjusted according to the mapping relation table.
6. A memory operation frequency adjusting device is applied to electronic equipment and is characterized by comprising:
the state monitoring module is used for monitoring the working state of the electronic equipment;
the frequency determination module is used for determining the memory running frequency corresponding to the working state if the working state is the working state of the memory running frequency to be adjusted;
the frequency adjusting module is configured to compare the memory operating frequency corresponding to the operating state with a frequency threshold, detect an equipment temperature of the electronic equipment if the memory operating frequency corresponding to the operating state is greater than the frequency threshold, calculate a difference between the equipment temperature and a first temperature threshold, adjust the memory operating frequency corresponding to the operating state according to the difference between the equipment temperature and the first temperature threshold to obtain a memory adjusting frequency of the electronic equipment, and adjust the current memory operating frequency of the electronic equipment to the memory adjusting frequency.
7. A computer-readable storage medium, on which a computer program is stored, which, when executed by a processor, implements the memory operating frequency adjustment method according to any one of claims 1 to 5.
8. An electronic device, comprising:
a processor;
a memory for storing one or more programs which, when executed by the processor, cause the processor to implement the memory operating frequency adjustment method of any of claims 1 to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010078499.3A CN111324196B (en) | 2020-02-03 | 2020-02-03 | Memory operation frequency adjusting method and device, storage medium and electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010078499.3A CN111324196B (en) | 2020-02-03 | 2020-02-03 | Memory operation frequency adjusting method and device, storage medium and electronic equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111324196A CN111324196A (en) | 2020-06-23 |
| CN111324196B true CN111324196B (en) | 2021-09-28 |
Family
ID=71168807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010078499.3A Active CN111324196B (en) | 2020-02-03 | 2020-02-03 | Memory operation frequency adjusting method and device, storage medium and electronic equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111324196B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113076141A (en) * | 2021-03-30 | 2021-07-06 | 山东英信计算机技术有限公司 | Acceleration card power-on initialization method and device and acceleration card |
| CN117806811A (en) * | 2022-09-30 | 2024-04-02 | 广东美的制冷设备有限公司 | Memory dynamic frequency reduction method of air conditioner, air conditioner and storage medium |
| CN117215783A (en) * | 2023-09-11 | 2023-12-12 | 上海合芯数字科技有限公司 | Memory bank frequency adjustment method and device based on real-time temperature |
| CN117573381B (en) * | 2024-01-16 | 2024-03-29 | 苏州元脑智能科技有限公司 | Method, system, equipment and storage medium for expanding memory frequency modulation |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1687867A (en) * | 2005-05-25 | 2005-10-26 | 威盛电子股份有限公司 | Method for regulating internal storage frequency |
| WO2006120507A1 (en) * | 2005-05-11 | 2006-11-16 | Freescale Semiconductor, Inc. | Method for power reduction and a device having power reduction capabilities |
| CN102402454A (en) * | 2010-09-10 | 2012-04-04 | 联想(北京)有限公司 | Method for regulating memory operation frequency and electronic device |
| CN103677966A (en) * | 2012-08-31 | 2014-03-26 | 研祥智能科技股份有限公司 | Method and system for managing memory |
| CN109062715A (en) * | 2018-07-05 | 2018-12-21 | Oppo（重庆）智能科技有限公司 | The determination method, apparatus and terminal of memory clock frequency |
-
2020
- 2020-02-03 CN CN202010078499.3A patent/CN111324196B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006120507A1 (en) * | 2005-05-11 | 2006-11-16 | Freescale Semiconductor, Inc. | Method for power reduction and a device having power reduction capabilities |
| CN1687867A (en) * | 2005-05-25 | 2005-10-26 | 威盛电子股份有限公司 | Method for regulating internal storage frequency |
| CN102402454A (en) * | 2010-09-10 | 2012-04-04 | 联想(北京)有限公司 | Method for regulating memory operation frequency and electronic device |
| CN103677966A (en) * | 2012-08-31 | 2014-03-26 | 研祥智能科技股份有限公司 | Method and system for managing memory |
| CN109062715A (en) * | 2018-07-05 | 2018-12-21 | Oppo（重庆）智能科技有限公司 | The determination method, apparatus and terminal of memory clock frequency |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111324196A (en) | 2020-06-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111324196B (en) | Memory operation frequency adjusting method and device, storage medium and electronic equipment | |
| CN111641828B (en) | Video processing method and device, storage medium and electronic equipment | |
| KR20180062270A (en) | Method for detecting earphone position, storage medium and electronic device therefor | |
| CN111212412B (en) | Near field communication method and device, computer readable storage medium and electronic equipment | |
| CN112039699B (en) | Network slice selection method and device, storage medium and electronic equipment | |
| CN111030990B (en) | Method for establishing communication connection, client and server | |
| CN111161176B (en) | Image processing method and device, storage medium and electronic equipment | |
| CN111629366A (en) | Interaction method and device between Bluetooth devices, storage medium and electronic device | |
| CN111613213B (en) | Audio classification method, device, equipment and storage medium | |
| CN114422340A (en) | Log reporting method, electronic device and storage medium | |
| CN112651510A (en) | Model updating method, working node and model updating system | |
| CN111464690B (en) | Application preloading method, electronic equipment, chip system and readable storage medium | |
| CN112289279B (en) | Screen brightness adjusting method and device, storage medium and electronic equipment | |
| CN111862972B (en) | Voice interaction service method, device, equipment and storage medium | |
| CN112616108A (en) | Audio output method, device, system, storage medium and electronic equipment | |
| CN110543403B (en) | Power consumption assessment method and device | |
| CN112599144A (en) | Audio data processing method, audio data processing apparatus, medium, and electronic device | |
| CN113489844B (en) | Volume gear adjusting method and electronic equipment | |
| CN111258610B (en) | System software updating method, device, system, storage medium and electronic equipment | |
| CN114120987B (en) | Voice wake-up method, electronic equipment and chip system | |
| CN111263017B (en) | Call mode control method and device, storage medium and electronic equipment | |
| CN109344284B (en) | Song file playing method, device, equipment and storage medium | |
| CN111400004A (en) | Video scanning interrupt processing method and device, storage medium and electronic equipment | |
| CN116233696B (en) | Airflow noise suppression method, audio module, sound generating device and storage medium | |
| CN114390406B (en) | Method and device for controlling displacement of loudspeaker diaphragm |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |