CN111323879A - Optical module - Google Patents
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- CN111323879A CN111323879A CN202010283655.XA CN202010283655A CN111323879A CN 111323879 A CN111323879 A CN 111323879A CN 202010283655 A CN202010283655 A CN 202010283655A CN 111323879 A CN111323879 A CN 111323879A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 60
- 238000010438 heat treatment Methods 0.000 claims abstract description 126
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 230000005540 biological transmission Effects 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
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- 239000000463 material Substances 0.000 abstract description 11
- 238000009413 insulation Methods 0.000 description 14
- 239000003292 glue Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4266—Thermal aspects, temperature control or temperature monitoring
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4274—Electrical aspects
- G02B6/428—Electrical aspects containing printed circuit boards [PCB]
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention relates to a laser chip in an optical module, which comprises a substrate and a waveguide integrated on the upper surface of the substrate, wherein the upper surface of the substrate is also provided with a heating unit for performing temperature compensation on the waveguide, the heating unit is close to the waveguide, the heating unit for performing temperature compensation on the waveguide is arranged at the position, close to the waveguide, of the upper surface of the substrate of the laser chip, so that direct heat transfer between the heating unit and the waveguide is realized, the loss of heat is avoided, the heating efficiency is greatly improved, and the power consumption is reduced, thereby easily realizing the tuning of the central wavelength of the laser chip in an industrial temperature range, obtaining the optical module meeting the 5G forward transmission MWDM wavelength range, widening the wavelength range of the laser chip, reducing the power consumption level of the optical module, improving the yield of the laser chip, realizing the 5G forward transmission-oriented application scene, and avoiding the use of expensive TEC for temperature tuning, the material cost of the 5G front-transmission optical module is saved.
Description
Technical Field
The invention relates to an optical module, and belongs to the technical field of optical communication.
Background
For an optical fiber communication system, in order to fully utilize the advantages of optical fibers in transmission capacity, a wavelength Division multiplexing system needs to be constructed, and according to a traditional Division mode, the optical fiber transmission bandwidth can be divided into a sparse wavelength Division multiplexing (cwdm) interval, a dense wavelength Division multiplexing interval and a Lan-WDM multiplexing interval according to a grid. With the construction of 5G system, a new division mode of wavelength division network is proposed, which is called as the scheme of Open-WDM/MWDM. The working wavelength of the laser chip has certain drift along with the temperature change, the drift coefficient is about 0.1 nm/DEG C, and the wavelength drift range of the laser in the full temperature range is about 9.5nm under the working temperature level environment temperature. In order to ensure crosstalk control between channels, the wavelength shift range is required to be not more than 6.5nm for the CWDM multiplexing mode, and the control of the shift amount is more strict for other multiplexing systems. The traditional technical scheme is to use a thermoelectric cooler TEC (thermal Electric cooler) to control the temperature of the working environment of the laser, but because the TEC needs a dedicated chip to control when working, and the TEC reduces efficiency along with the increase of the temperature control range in the working state of heating and cooling, resulting in a large amount of useless power loss. With the limitation on the power consumption of the module, the actual module use requirements are often not met. At present, in order to work in an industrial temperature environment (-40 ℃ -85 ℃), a heating sheet is attached to the outside of a laser or a heating resistance wire is wound, and heat is transferred to an internal laser in a heat conduction mode, but the method has low heat conduction efficiency and large power consumption, and meanwhile, the size of a device is increased. In addition, the laser and the heater are disposed on the thermal isolation substrate, which has a good heating effect at a low temperature, but the thermal isolation substrate may hinder the heat dissipation of the die, so that the working ability of the assembly to adapt to a high temperature environment is reduced. In another method, a heater is disposed on a carrier close to a laser chip, but the carrier connected to the laser chip needs to be heated together, the volume of the carrier is much larger than that of the laser, and most of the heat in a heating state is used for heating the carrier, which results in low efficiency.
Disclosure of Invention
The invention aims to provide an optical module which can effectively adjust the emission wavelength to meet the wavelength range of 5G forward transmission MWDM.
In order to achieve the purpose, the invention provides the following technical scheme: an optical module comprises a shell, an optical transmitting assembly arranged in the shell and a circuit board connected with the optical transmitting assembly, wherein the optical transmitting assembly comprises a laser chip, the laser chip comprises a substrate and a waveguide integrated on the upper surface of the substrate, a heating unit for performing temperature compensation on the waveguide is further arranged on the upper surface of the substrate, and the heating unit is close to the waveguide.
Further, the distance between the heating unit and the waveguide is 10 um-100 um.
Further, the heating unit is fixed on the upper surface of the substrate through heat-conducting glue.
Further, the heating unit is completely fixed to the upper surface of the substrate.
Further, the heating unit portion is fixed to the upper surface of the substrate.
Further, the optical module includes a substrate, the laser chip is disposed on the substrate, and a heat insulation unit for heat insulation is disposed between the heating unit and the substrate.
Further, the heating unit is a heat resistor formed of Ti metal.
Further, the resistance value of the heating unit is determined by the following formula:
R＝ρ*L/S
wherein R is the resistance value of the heating unit; ρ represents the resistivity of the heating element; l is the length of the heating unit; s is the cross-sectional area of the heating unit perpendicular to the current direction.
Furthermore, the optical module also comprises a temperature sensor for detecting temperature and a temperature control unit in signal connection with the temperature sensor and the heating unit, and the temperature control unit controls the heating unit to be started or closed according to the temperature value detected by the temperature sensor.
Further, the temperature compensation control method for the optical module includes:
the temperature sensor collects a current temperature value;
based on the temperature value acquired by the temperature sensor, the temperature control unit judges whether the temperature value is lower than a preset temperature threshold value;
and if the temperature is lower than the preset temperature threshold value, controlling the heating unit to start.
The invention has the beneficial effects that: according to the invention, the heating unit for performing temperature compensation on the waveguide is arranged on the upper surface of the substrate of the laser chip close to the waveguide, so that direct heat transfer between the heating unit and the waveguide is realized, the heat loss is avoided, the heating efficiency is greatly improved, and the power consumption is reduced, so that the tuning of the central wavelength of the laser chip within an industrial temperature range is easily realized, the optical module meeting the 5G forward transmission MWDM wavelength range is obtained, the wavelength range of the laser chip is widened, the power consumption level of the optical module is reduced, the yield of the laser chip is improved, and a 5G forward transmission application scene can be realized, so that the expensive TEC is not used for temperature tuning, and the material cost of the 5G forward transmission optical module is saved.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical solutions of the present invention more clearly understood and to implement them in accordance with the contents of the description, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.
Drawings
Fig. 1 is a partial structural schematic view of a light module provided with a heating unit according to a first embodiment of the present invention;
fig. 2 is a schematic partial structural view of a light module provided with a heating unit according to a second embodiment of the present invention;
fig. 3 is a partial structural view of a light module provided with a heating unit according to a third embodiment of the present invention;
FIG. 4 is a schematic structural view of the heating unit shown in FIG. 3;
FIG. 5 is a schematic view of the heating unit shown in FIG. 3 in another orientation;
fig. 6 is a partial structural view of a light module provided with a heating unit according to a fourth embodiment of the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the mechanism or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
An optical module shown in an embodiment of the present invention includes a housing, a light receiving module disposed in the housing, a light emitting module, a circuit board connected to the light receiving module and the light emitting module, and an interface unit disposed on the housing and in signal connection with the light receiving module and the light emitting module for sending or receiving an electrical signal, wherein the light receiving module is configured to convert a received optical signal into an electrical signal and output the electrical signal to the interface unit; the optical transmission module is used for converting the electric signal sent by the interface unit into an optical signal and outputting the optical signal. The optical module also comprises a control unit in signal connection with the interface unit, the light receiving assembly and the light emitting assembly, and a power supply unit which provides power for the interface unit, the light receiving assembly and the light emitting assembly and controls the on and off of each assembly, wherein the control unit is used for controlling the optical module through the internal communication interface. The structure of the optical module is the existing structure, and the preparation method of the optical module is the prior art, and redundant description is not repeated here.
The light emitting module includes a laser chip, and the laser chip includes a substrate and a waveguide integrated on an upper surface of the substrate, in this embodiment, the laser chip is a DFB laser chip, and the DFB laser chip is a ridge waveguide structure. The substrate may be a SiC substrate, but is not limited thereto, and may be another substrate. The cross section of the laser chip comprises an indium phosphide (InP) substrate, a buffer growth layer, a lower limiting layer, a lower waveguide layer, an active layer (Multi Quantum Well), an upper limiting layer, an upper waveguide layer, an indium phosphide (InP) spacing layer and an ohmic contact layer from bottom to top. The structure of the DFB laser chip is the existing structure, and the preparation method of the DFB laser chip is the prior art, so that redundant description is not repeated here.
In order to tune the central wavelength of a laser chip within an industrial-grade temperature range (-40-85 ℃) to obtain an optical module meeting the 5G forward-transmission MWDM wavelength range, a single temperature control technology can be used, and the working temperature is increased only by heating the laser in a low-temperature environment, so that the working temperature range of the laser is reduced, and the difficulty of a control circuit is reduced. Or the heating efficiency is improved and the power consumption is reduced by optimizing the heat conduction mode. In this embodiment, the upper surface of the substrate is provided with a heating unit for performing temperature compensation on the waveguide, the heating unit is close to the waveguide, the distance between the heating unit and the waveguide is 10um to 100um, specific numerical values are not limited here, and the heating unit can be set according to actual needs. The distance between the heating unit and the waveguide is 20-50 um for the Oclaro HL13BFCP00 series chip, and similarly, the distance between the heating unit and the waveguide is 20-50 um for the 1xxD-25GLxx11-xxx and the 1xxx-25B-Lxx11-S3 series chip of the Macom 25G DFB chip.
It should be noted here that, because the area of the upper surface of the substrate is large, the heating unit is arranged on the upper surface of the substrate, and when the heating unit is arranged close to the waveguide, the area of the contact between the heating unit and the substrate is large enough, so that the heating rate of the heating unit to the substrate near the position of the waveguide is improved, the heat is prevented from passing through a plurality of carriers with different thicknesses through one or more heat sinks, the position of the waveguide is directly heated, the heating efficiency is greatly improved, and the power consumption is reduced. It is true that the number of the heating units may be plural, and a plurality of the heating units are provided at positions close to the waveguide.
Specifically, the heating unit is fixed on the upper surface of the substrate through the heat-conducting glue, so that the heating unit is overlapped with the upper surface of the substrate as much as possible, and the heating efficiency of the waveguide is improved. Indeed, in other embodiments, the heating unit may be fixed on the upper surface of the substrate by using other materials or methods, and is not limited herein.
Referring to fig. 1, an optical module according to a first embodiment of the present invention includes a substrate 11, and a metal electrode 111 is disposed on the substrate 11, where the metal electrode 111 includes a positive electrode and a negative electrode, and the positions and the specific shapes of the positive electrode and the negative electrode are not specifically limited herein, and may be set and prepared according to actual requirements. The substrate 11 is a ceramic substrate, but the substrate 11 is not limited in particular, and in other embodiments, the substrate 11 may be made of other materials. The laser chip 12 with the substrate 121 is disposed on the base plate 11, in this embodiment, the laser chip 12 is fixed on the base plate 11 by welding, and the heating unit 13 is fixed on the upper surface of the substrate 121 by bonding with a thermal conductive adhesive, in other embodiments, the fixing manner of the laser chip 12 and the heating unit 13 may be other manners, which is not limited herein.
In this embodiment, the heating unit 13 includes a thermal resistor 131 formed by Ti metal, Ti meets the requirements of high resistivity and low cost at the same time, the thermal resistor 131 is disposed on the surface of the heating substrate 132, wherein the heating substrate 132 is a rectangular parallelepiped structure, the thermal resistor 131 is disposed on the upper surface of the heating substrate 132, wire bonding pad electrodes 133 are disposed at two ends of the thermal resistor 131, one is used as an anode and the other is used as a cathode, and are connected TO the metal electrode 111 on the ceramic substrate 11 in a gold wire bonding manner, and then current can be introduced into the thermal resistor 131 through TO pins or Box gold fingers TO realize a heating function. In other embodiments, the heating substrate may have other desired shapes, the thermal resistor may also be other metal materials or other materials with relatively high resistivity, the heating unit may also be any other device or material that can generate heat energy, and the heating unit may also have other structures, shapes or forms, which is not limited herein.
The length, width and thickness of the thermal resistor 131 are determined by the required resistance value, and specifically, the resistance value of the thermal resistor 131 is determined by the following formula:
R＝ρ*L/S
wherein R is a resistance value of the heating unit 13; ρ represents the resistivity of the heating unit 13; l is the length of the heating unit 13; s is a cross-sectional area of the heating unit 13 perpendicular to the current direction.
In this embodiment, the thermal resistor 131 is a slender strip and is arranged in a similar S shape, so that the space can be utilized to the greatest extent, the heating efficiency of the thermal resistor 131 is maximized, the resistance value of the thermal resistor 131 is set according to actual needs, but it is required that the power consumption of about 500mW can be met when 100mA of current is passed through, and the thermal resistor 131 can heat the DFB laser so that the wavelength tuning range generated by the DFB laser is about 5 nm. However, in other embodiments, the shape of the thermal resistor may be other, and the shape of the thermal resistor is not specifically limited herein and may be determined according to the actual situation.
The laser chip 12 in this embodiment is large enough, and the heating units 13 can be all fixed on the upper surface of the substrate 121 and close to the waveguide 122 disposed at the middle position of the substrate 121, so as to realize that the heating resistor 131 generates as much heat as possible to heat the waveguide 122. Two routing pad electrodes 123 are arranged on a substrate 121 of the laser chip 12, one is used as an anode, the other is used as a cathode, the two routing pad electrodes are connected with corresponding metal electrodes 111 on the ceramic substrate 11 in a gold wire bonding mode, and then current can be introduced through TO pins or Box gold fingers.
The heating method can be applied TO packaging methods such as TO packaging or BOX packaging, and the heating unit 13 is fixed on the upper surface of the substrate 121 through heat conducting glue in the preparation process.
Referring to fig. 2, the structure of the optical module according to the second embodiment of the present invention is substantially the same as the structure of the optical module according to the first embodiment, except that the laser chip 22 is relatively small, at this time, a part of the heating unit 23 may be fixed on the upper surface of the substrate 221, another part of the heating unit 23 exceeds the laser chip 22, a heat insulation unit 24 for heat insulation is disposed between the heating unit 23 and the base plate 21, the heat insulation unit 24 may be a heat insulation gasket 24, and the heat insulation unit 24 is used for insulating heat transmission of the heating unit 23 to the substrate 221, on one hand, and for supporting the heating unit 23, so that the heating unit 23 is fixed on the upper surface of the substrate 221 and can be stably and continuously attached to the substrate 221. The heat insulation unit 24 may be fixed at both ends to the heating unit 23 and the base plate 21, respectively, by glue having poor thermal conductivity, and the size of the heat insulation unit 24 is continuously set according to actual needs. In other embodiments, the material and shape of the heat insulation unit 24 and the fixing manner of the heating unit 23 and the substrate 21 may be other, and are not limited herein. In this embodiment, in order to attach the thermal resistor 231 to the substrate 221 as much as possible, two wire bonding pad electrodes 233 are arranged side by side at a portion beyond the laser chip 22, thereby further improving the heat transfer efficiency.
Referring to fig. 3 to 5, the optical module according to the third embodiment of the present invention has a structure substantially the same as that of the optical module according to the first embodiment, except that the heating resistor 331 of the heating unit 33 is disposed over one surface of the heating substrate 332, one electrode film 334 is disposed at each of two ends of the heating substrate 332, the two electrode films 334 extend to the other surface of the heating substrate 332, the bonding pad 333 is disposed on the two electrode films 334 on the other surface of the heating substrate 332, and one surface over which the heating resistor 331 is disposed is bonded to the substrate 321, so as to further improve the heating efficiency, or the size of the heating unit 33 can be reduced, so that the heating unit 33 can heat the laser chip 32 having a smaller size. In this embodiment, the shape, material, and the like of the electrode thin film 334 are not limited.
Referring to fig. 6, the optical module according to the fourth embodiment of the present invention has a structure substantially the same as that of the optical module according to the third embodiment, except that the laser chip 42 is relatively small, a portion of the heating unit 43 is fixed on the upper surface of the substrate 421, another portion of the heating unit 43 exceeds the laser chip 42, and a heat insulation unit 44 for heat insulation is disposed between the heating unit 43 and the substrate 41, where the heat insulation unit 44 is completely the same as the heat insulation unit 24 shown in the second embodiment, and is not described herein again.
Indeed, in other embodiments, in order to satisfy the wavelength tuning of the center wavelength of the DFB laser chip within the industrial temperature range, the upper and lower surfaces of the heating substrate of the heating unit may be both provided with thermal resistors, and the specific method is the same as that of the first embodiment or the third embodiment, and is not repeated herein.
In this application, with the direct bonding of heating element on the surface of laser instrument chip, for the mode of TEC accuse temperature, the heating element is nearer apart from the waveguide of laser instrument chip, and the below of waveguide is exactly the position that laser instrument chip active area was luminous, therefore the distance of being close is favorable to the faster transmission of heat to the active area, temperature transfer is faster, heat transfer efficiency is higher, the wavelength tuning is easier, consequently, can realize great wavelength tuning range with less electric power, the power consumption level of optical module has been reduced.
The TEC in the optical module is omitted, the temperature compensation range far larger than the temperature control of the TEC can be realized by reasonably designing the power wavelength tuning target of the heating unit during working, the central wavelength deviation +/-2.5 nm required by a 5G forward transmission MWDM scheme is met, the +/-1.5 nm allowance is reserved for selecting the wavelength of the laser chip, and the wavelength selection requirement of the laser chip is relaxed, so that the difficulty in selecting the wavelength of the laser chip after a single wafer flow sheet is relaxed, the wave yield of the laser chip is improved, the material cost of the optical module is reduced, and particularly, the material cost of the 5G forward transmission optical module can be reduced by about 20%. The improvement of the yield means that the number of qualified chips produced by the single wafer is more, the price of the chips is reduced, and thus the cost of the optical module is indirectly reduced. The methods referred to in this application are still applicable to the 6G, 7G, etc. appearing hereafter.
The optical module also comprises a temperature sensor for detecting temperature and a temperature control unit in signal connection with the temperature sensor and the heating unit, and the temperature control unit controls the heating unit to be started or closed according to a temperature value detected by the temperature sensor. As can be easily understood, the temperature detected by the temperature sensor may be the temperature of components such as a laser chip, and in this application, there is no limitation on the specific position where the temperature sensor is disposed in the optical module, the temperature sensor is disposed at a corresponding position according to actual needs, and there is no limitation on the type of the temperature sensor, and the temperature sensor may be a thermocouple, and the like, which is not exemplified herein.
The temperature compensation control method for the optical module comprises the following steps:
the temperature sensor collects a current temperature value;
based on the temperature value acquired by the temperature sensor, the temperature control unit judges whether the temperature value is lower than a preset temperature threshold value;
and if the temperature is lower than the preset temperature threshold value, controlling the heating unit to start.
And when the temperature value is higher than the preset temperature threshold value, controlling the heating unit to be closed.
The specific preset temperature threshold can be set according to actual conditions, and the specific temperature compensation control method is the prior art and is not described herein again. It should be noted that the temperature control unit includes at least one logic control circuit, and the at least one logic control circuit determines between the temperature value and a preset temperature threshold, and controls the heating unit to be turned on or off.
In other embodiments, the optical module may not be provided with a temperature sensor, but a wavelength detection device may be used to detect the wavelength of the laser chip, and calculate the corresponding temperature according to the wavelength, so as to control the heating unit to be turned on or off. The temperature of the optical module may be acquired in other manners, which are not specifically listed here.
In summary, according to the invention, the heating unit for performing temperature compensation on the waveguide is arranged on the upper surface of the substrate of the laser chip near the waveguide, so that direct heat transfer between the heating unit and the waveguide is realized, heat loss is avoided, heating efficiency is greatly improved, and power consumption is reduced, thereby easily tuning the central wavelength of the laser chip within an industrial temperature range, obtaining an optical module meeting a 5G fronthaul MWDM wavelength range, widening the wavelength range of the laser chip, reducing the power consumption level of the optical module, improving the yield of the laser chip, and realizing a 5G fronthaul application scenario, thereby avoiding using an expensive TEC for temperature tuning and saving the material cost of the 5G fronthaul optical module.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. An optical module is characterized by comprising a shell, an optical transmission assembly arranged in the shell and a circuit board connected with the optical transmission assembly, wherein the optical transmission assembly comprises a laser chip, the laser chip comprises a substrate and a waveguide integrated on the upper surface of the substrate, the upper surface of the substrate is also provided with a heating unit for performing temperature compensation on the waveguide, and the heating unit is close to the waveguide.
2. The optical module of claim 1, wherein a distance between the heating unit and the waveguide is 10um to 100 um.
3. The optical module as claimed in claim 1, wherein the heating unit is fixed to the upper surface of the substrate by a thermally conductive adhesive.
4. A light module as claimed in claim 3, characterized in that the heating unit is completely fixed to the upper substrate surface.
5. A light module as claimed in claim 3, characterized in that the heating unit part is fixed to the substrate upper surface.
6. The optical module according to claim 5, wherein the optical module includes a substrate on which the laser chip is disposed, and a heat insulating unit for insulating heat is disposed between the heating unit and the substrate.
7. The optical module according to claim 7, wherein the heating unit is a thermal resistor formed of Ti metal.
8. A light module as claimed in claim 1, characterized in that the resistance value of the heating element is determined by the formula:
R＝ρ*L/S
wherein R is the resistance value of the heating unit; ρ represents the resistivity of the heating element; l is the length of the heating unit; s is the cross-sectional area of the heating unit perpendicular to the current direction.
9. The light module as claimed in claim 1, further comprising a temperature sensor for detecting a temperature and a temperature control unit in signal connection with the temperature sensor and the heating unit, wherein the temperature control unit controls the heating unit to be turned on or off according to a temperature value detected by the temperature sensor.
10. The optical module according to claim 9, wherein a temperature compensation control method for the optical module comprises:
the temperature sensor collects a current temperature value;
based on the temperature value acquired by the temperature sensor, the temperature control unit judges whether the temperature value is lower than a preset temperature threshold value;
and if the temperature is lower than the preset temperature threshold value, controlling the heating unit to start.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115327713A (en) * | 2022-07-31 | 2022-11-11 | 山东华云光电技术有限公司 | Industrial optical module with temperature compensation function at receiving end |
| CN115327713B (en) * | 2022-07-31 | 2024-06-04 | 山东华云光电技术有限公司 | Industrial-grade optical module with temperature compensation function at receiving end |
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| JPH11326658A (en) * | 1998-05-14 | 1999-11-26 | Furukawa Electric Co Ltd:The | Optical module |
| US6101210A (en) * | 1998-07-10 | 2000-08-08 | Bookham Technology Plc | External cavity laser |
| JP2000249853A (en) * | 1999-02-26 | 2000-09-14 | Furukawa Electric Co Ltd:The | Optical module |
| CN110995355A (en) * | 2019-12-26 | 2020-04-10 | 易锐光电科技(安徽)有限公司 | Optical module |
| CN212255792U (en) * | 2020-04-13 | 2020-12-29 | 易锐光电科技(安徽)有限公司 | Optical module |
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2020
- 2020-04-13 CN CN202010283655.XA patent/CN111323879A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11326658A (en) * | 1998-05-14 | 1999-11-26 | Furukawa Electric Co Ltd:The | Optical module |
| US6101210A (en) * | 1998-07-10 | 2000-08-08 | Bookham Technology Plc | External cavity laser |
| CN1309827A (en) * | 1998-07-10 | 2001-08-22 | 布克哈姆技术公共有限公司 | External cavity laser |
| JP2000249853A (en) * | 1999-02-26 | 2000-09-14 | Furukawa Electric Co Ltd:The | Optical module |
| CN110995355A (en) * | 2019-12-26 | 2020-04-10 | 易锐光电科技(安徽)有限公司 | Optical module |
| CN212255792U (en) * | 2020-04-13 | 2020-12-29 | 易锐光电科技(安徽)有限公司 | Optical module |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115327713A (en) * | 2022-07-31 | 2022-11-11 | 山东华云光电技术有限公司 | Industrial optical module with temperature compensation function at receiving end |
| CN115327713B (en) * | 2022-07-31 | 2024-06-04 | 山东华云光电技术有限公司 | Industrial-grade optical module with temperature compensation function at receiving end |
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