CN111323667B - Bounded wave simulator with three different electric field areas - Google Patents
Bounded wave simulator with three different electric field areas Download PDFInfo
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- CN111323667B CN111323667B CN202010207014.6A CN202010207014A CN111323667B CN 111323667 B CN111323667 B CN 111323667B CN 202010207014 A CN202010207014 A CN 202010207014A CN 111323667 B CN111323667 B CN 111323667B
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- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/001—Measuring interference from external sources to, or emission from, the device under test, e.g. EMC, EMI, EMP or ESD testing
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- G01R29/0814—Field measurements related to measuring influence on or from apparatus, components or humans, e.g. in ESD, EMI, EMC, EMP testing, measuring radiation leakage; detecting presence of micro- or radiowave emitters; dosimetry; testing shielding; measurements related to lightning
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Abstract
The embodiment of the disclosure provides a bounded wave simulator with three different electric field areas, and belongs to the technical field of electromagnetism. Wherein the bounded wave simulator comprises: the electric field device is arranged at an emission port of the pulse signal generator and comprises a first metal plate and a second metal plate, three electric field areas are sequentially formed between the first metal plate and the second metal plate when a power supply is connected, the three electric field areas are arranged along the transmission direction of pulse signals of the pulse signal generator, and the corresponding plate intervals of the three electric field areas are different; the terminal load is arranged at the end part of the electric field device far away from the pulse signal generator, and the terminal load is positioned in the pulse signal transmission direction of the pulse signal generator. Therefore, by utilizing the electric field areas with different plate intervals of the electric field device, different electric field intensities required by device testing can be realized, the electric field intensity, the frequency and the amplitude of the bounded wave simulator are improved, and the electric field performance of the bounded wave simulator is optimized.
Description
Technical Field
The present disclosure relates to the field of electromagnetic technology, and more particularly, to a bounded wave simulator having three different electric field regions.
Background
Electromagnetic Compatibility (EMC) is a subject of research on the coexistence of various electric devices (including living organisms in a broad sense) under limited space, time and spectrum resources without causing degradation. The electromagnetic interference test is to measure the size of electromagnetic wave signals generated and emitted outwards by the tested equipment in a normal working state to reflect the strength of interference on surrounding electronic equipment. The electromagnetic sensitivity test is used for measuring the anti-interference capability of the tested equipment to electromagnetic disturbance.
With the rapid development of electromagnetic compatibility technology, the electromagnetic compatibility test for electronic products such as chips, PCBs, ICs, etc. is more and more strict. Electromagnetic compatibility testing environments must meet high requirements for spatial electric field strength, frequency and uniformity, while horizontal electromagnetic waves are just a favorable technique for generating suitable electric fields. The horizontal Electromagnetic wave generating devices most widely used at present include Transverse Electric and Magnetic Field cells (TEM), Gigahertz Transverse Electromagnetic cells (GTEM), and bounded wave simulators.
The TEM cell is a coaxial waveguide device that generates transverse electromagnetic waves between inner and outer conductor plates. The device has simple structure and low manufacturing cost, and can accurately calculate the internal electric field intensity. However, the disadvantage is the contradiction between the upper limit of the available frequencies and the measured dimensions, which are limited to a quarter of the minimum operating wavelength and are therefore only suitable for small devices such as chips. The GTEM chamber adopts a single-end transition structure on the basis of a TEM chamber, a terminal area array matched with a resistor is adopted as a terminal load, and an absorption material is laid on a bottom plate, so that the Voltage Standing Wave Ratio (VSWR) is effectively reduced. The GTEM chamber has a broad frequency band (up to 1GHz) and a very uniform electric field. The bounded wave simulator is also called a Parallel plate TEM Cell (PPTC for short), and is a transverse electromagnetic wave generator composed of a high-voltage pulse generator, a transmission line and a terminal load. It can generate strong electric fields with frequencies up to GHz and concentrate the energy inside the device. Compared with a TEM chamber and a GTEM chamber, the bounded wave simulator has obvious advantages in the aspect of working space while sacrificing high frequency and high amplitude of an electric field, and can generate a more uniform electric field.
Modern electronic equipment and components and parts integrated level is high, and is small, has good anti electromagnetic interference ability simultaneously. Therefore, new requirements are put forward for the electromagnetic compatibility test environment of the electronic equipment, and the electric field generating device with wide frequency band, good uniformity and high field strength has important significance for the electromagnetic compatibility test.
Therefore, there is a need for a bounded wave simulator capable of satisfying the requirements of a device test environment for high electric field frequency, high amplitude and high field strength.
Disclosure of Invention
In view of the above, embodiments of the present disclosure provide a bounded wave simulator having three distinct electric field regions that at least partially solve the problems of the prior art.
The disclosed embodiments provide a bounded wave simulator having three distinct electric field regions, comprising:
a pulse signal generator;
the electric field device is arranged at the transmitting port of the pulse signal generator and comprises a first metal plate and a second metal plate, three electric field areas are sequentially formed between the first metal plate and the second metal plate when a power supply is connected, the three electric field areas are arranged along the transmission direction of the pulse signal generator, and the plate intervals corresponding to the three electric field areas are different;
and the terminal load is arranged at the end part of the electric field device far away from the pulse signal generator and is positioned in the pulse signal transmission direction of the pulse signal generator.
According to a specific implementation manner of the embodiment of the present disclosure, a first electric field region, a third electric field region and a second electric field region are included between the first metal plate and the second metal plate, which are sequentially arranged along a pulse signal transmission direction, and a plate spacing of the third electric field region is smaller than a plate spacing of the first electric field region and a plate spacing of the second electric field region.
According to a specific implementation manner of the embodiment of the present disclosure, the plate interval of the first electric field region, the second electric field region, and the third electric field region ranges from 20 mm to 100 mm.
According to a specific implementation manner of the embodiment of the present disclosure, the plate interval of the first electric field region is 100mm, the plate interval of the second electric field region is 50 mm, and the plate interval of the third electric field region is 20 mm.
According to a specific implementation manner of the embodiment of the present disclosure, the first metal plate and the second metal plate are both made of aluminum; and/or the presence of a gas in the gas,
the thickness of the first metal plate and the second metal plate ranges from 1 mm to 5 mm.
According to a specific implementation manner of the embodiment of the present disclosure, a transition plate is disposed between the third electric field region and the metal plates corresponding to the first electric field region and the second electric field region, and an inclination angle of the transition plate ranges from 5 degrees to 20 degrees.
According to a specific implementation manner of the embodiment of the present disclosure, the terminal load is a distributed resistor, the distributed resistor includes a plurality of parallel resistors, and all the resistors are connected in parallel between the first metal plate and the second metal plate.
According to a specific implementation manner of the embodiment of the present disclosure, a plurality of first connection points are uniformly arranged on the first metal plate, and a plurality of corresponding second connection points are uniformly arranged on the second metal plate;
a first end of each of said resistors being connected to a first connection point on said first metal plate and a second end of said resistor being connected to a second connection point on said second metal plate;
and a shunt wire is arranged between the first end of each resistor and the first connecting point connected with the adjacent resistor.
According to a specific implementation manner of the embodiment of the present disclosure, all the resistors in the distributed resistors are non-inductive resistors, and the number of the non-inductive resistors is 2 n;
each of the non-inductive resistors has a resistance value of 2nZc, where Zc is the wave impedance of the electric field device.
According to one specific implementation of the embodiment of the disclosure, the pulse signal generator is a dual-exponential wave generator, and the frequency of the electric field of the bounded wave simulator is in a range from 1khz to 300 mhz.
The bounded wave simulator provided by the embodiment of the disclosure mainly comprises: the electric field device is arranged at an emission port of the pulse signal generator and comprises a first metal plate and a second metal plate, three electric field areas are sequentially formed between the first metal plate and the second metal plate when a power supply is connected, the three electric field areas are arranged along the transmission direction of pulse signals of the pulse signal generator, and the corresponding plate intervals of the three electric field areas are different; the terminal load is arranged at the end part of the electric field device far away from the pulse signal generator, and the terminal load is positioned in the pulse signal transmission direction of the pulse signal generator. Therefore, by utilizing the electric field areas with different plate intervals of the electric field device, different electric field intensities required by device testing can be realized, the electric field intensity, the frequency and the amplitude of the bounded wave simulator are improved, and the electric field performance of the bounded wave simulator is optimized.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings needed to be used in the embodiments will be briefly described below, and it is apparent that the following descriptions will be made
The drawings described above are merely examples of the present disclosure, and it will be apparent to those skilled in the art that other drawings can be obtained from the drawings without inventive step.
FIG. 1 is a perspective view of a bounded wave simulator having three distinct electric field regions provided by an embodiment of the present disclosure;
FIG. 2 is a front view of a bounded wave simulator provided by embodiments of the present disclosure;
FIG. 3 is a top view of a bounded wave simulator provided by embodiments of the present disclosure;
FIG. 4 is a schematic diagram illustrating a partial structure of a bounded wave simulator provided in an embodiment of the present disclosure;
fig. 5 is a schematic structural diagram of a terminal load of a bounded wave simulator provided in an embodiment of the present disclosure.
Summary of reference numerals:
a bounded wave simulator 100;
a pulse signal generator 110;
an electric field device 120, a first metal plate 121, a second metal plate 122, a first electric field region 123, a second electric field region 124, a third electric field region 125;
a terminating load 130, a non-inductive resistor 131, a first connecting point 132, a second connecting point 133, and a shunt wire 134.
Detailed Description
The embodiments of the present disclosure are described in detail below with reference to the accompanying drawings.
The embodiments of the present disclosure are described below with specific examples, and other advantages and effects of the present disclosure will be readily apparent to those skilled in the art from the disclosure in the specification. It is to be understood that the described embodiments are merely illustrative of some, and not restrictive, of the embodiments of the disclosure. The disclosure may be embodied or carried out in various other specific embodiments, and various modifications and changes may be made in the details within the description without departing from the spirit of the disclosure. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict. All other embodiments, which can be derived by a person skilled in the art from the embodiments disclosed herein without making any creative effort, shall fall within the protection scope of the present disclosure.
It is noted that various aspects of the embodiments are described below within the scope of the appended claims. It should be apparent that the aspects described herein may be embodied in a wide variety of forms and that any specific structure and/or function described herein is merely illustrative. Based on the disclosure, one skilled in the art should appreciate that one aspect described herein may be implemented independently of any other aspects and that two or more of these aspects may be combined in various ways. For example, an apparatus may be implemented and/or a method practiced using any number of the aspects set forth herein. Additionally, such an apparatus may be implemented and/or such a method may be practiced using other structure and/or functionality in addition to one or more of the aspects set forth herein.
It should be noted that the drawings provided in the following embodiments are only for illustrating the basic idea of the present disclosure, and the drawings only show the components related to the present disclosure rather than the number, shape and size of the components in actual implementation, and the type, amount and ratio of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
In addition, in the following description, specific details are provided to facilitate a thorough understanding of the examples. However, it will be understood by those skilled in the art that the aspects may be practiced without these specific details.
Referring to fig. 1, a schematic structural diagram of a bounded wave simulator (hereinafter, referred to as a bounded wave simulator) having three different electric field regions is provided for an embodiment of the present disclosure. As shown in fig. 1 to 3, the bounded wave simulator 100 mainly includes:
a pulse signal generator 110;
the electric field device 120 is disposed at the transmitting port of the pulse signal generator 110, the electric field device 120 includes a first metal plate 121 and a second metal plate 122, three electric field regions are sequentially formed between the first metal plate 121 and the second metal plate 122 when a power supply is connected, the three electric field regions are arranged along the transmission direction of the pulse signal generator 110, and the plate distances corresponding to the three electric field regions are different;
and a terminal load 130, wherein the terminal load 130 is disposed at an end of the electric field device 120 far away from the pulse signal generator 110, and the terminal load 130 is located in a pulse signal transmission direction of the pulse signal generator 110.
The bounded wave simulator 100 provided in this embodiment is used to provide an electromagnetic compatibility test environment for testing the electromagnetic compatibility of electronic devices such as chips, PCBs, and ICs. The bounded wave simulator 100 mainly comprises a pulse signal generator 110, an electric field device 120 and a terminal, wherein the pulse signal generator 110 generates a pulse signal into the electric field device 120, so that an electric field area is formed in the electric field device 120 as an electromagnetic compatibility test environment of the device, and the terminal load 130 is used for absorbing electromagnetic waves which are generated by the pulse signal generator 110 and transmitted to the tail end of the electric field device 120.
In particular, the pulse signal generator 110 is a conventional pulse signal generator 110, such as a dual-exponential pulse signal generator 110. The selection of specific parameters of the pulse signal generator 110 may be determined according to the electromagnetic compatibility test requirements of a specific device under test, and is not limited.
As shown in fig. 1 to fig. 3, the electric field device 120 is disposed at the transmitting port of the pulse signal generator 110 and extends along the pulse signal transmission direction (shown as F in fig. 1) of the pulse signal generator 110. The electric field device 120 includes a first metal plate 121 and a second metal plate 122 which are parallel to each other, and when a voltage is applied between the first metal plate 121 and the second metal plate 122, it can be regarded as a parallel plate capacitor device. If the edge effect is neglected and the ideal impedance matching is considered, the pulse signal generated by the pulse signal generator 110 propagates forward to the terminating load 130 and is completely absorbed by the terminating load 130, and there is no reflected wave between the first metal plate 121 and the second metal plate 122. Under the set conditions, the electric field in the region between the first metal plate 121 and the second metal plate 122 is calculated by the formula:
e is the electric field intensity, U is the voltage between the first metal plate 121 and the second metal plate 122, and h is the distance between the upper and lower metal plates. In the case where the voltage is the same between the first metal plate 121 and the second metal plate 122, varying the plate pitch can obtain different electric field strengths.
In specific implementation, in order to obtain different electric field strengths, the plate spacing between the first metal plate 121 and the second metal plate 122 is changed, and the different plate spacings correspond to different electric field regions. Specifically, three electric field regions are formed between the first metal plate 121 and the second metal plate 122 as relatively independent working spaces to effectively expand the frequency and amplitude of the electric field.
Furthermore, a terminating load 130 is disposed at an end of the electric field device 120 away from the pulse signal generator 110 along the pulse signal transmission direction to absorb the refracted wave of the pulse, improving the performance of the bounded wave simulator 100.
The bounded wave simulator provided by the embodiment of the disclosure mainly includes: the pulse signal generator, the electric field device and the terminal load utilize three electric field areas with different plate intervals of the electric field device to realize different electric field strengths required by device testing, improve the electric field strength, the frequency and the amplitude of the bounded wave simulator and optimize the electric field performance of the bounded wave simulator.
According to a specific implementation manner of the embodiment of the present disclosure, as shown in fig. 1 to 3, a first electric field region 123, a third electric field region 125, and a second electric field region 124 are included between the first metal plate 121 and the second metal plate 122, which are sequentially arranged along a pulse signal transmission direction, and a plate interval of the third electric field region 125 is smaller than a plate interval of the first electric field region 123 and a plate interval of the second electric field region 124.
In this embodiment, three electric field regions with different plate pitches formed between the first metal plate 121 and the second metal plate 122 are defined as a first electric field region 123, a third electric field region, and a second electric field region 124, and the smaller the minimum field strength of the plate pitch of the third electric field region 125 located in the middle is, the smaller the relatively larger field strength of the plate pitch of the first electric field region 123 and the second electric field region 124 located at both ends is. The relative sizes of the plate separation distances of the first electric field region 123 and the second electric field region 124 may not be limited, for example, the plate separation distance of the first electric field region 123 may be larger than the plate separation distance of the second electric field region 124, and the plate separation distance of the first electric field region 123 may also be smaller than the plate separation distance of the second electric field region 124.
Optionally, the plate separation distance of the first electric field region 123, the second electric field region 124, and the third electric field region 125 ranges from 20 mm to 100 mm.
In a specific implementation, the plate spacing of the first electric field region 123 is set to be 100mm, the plate spacing of the second electric field region 124 is set to be 50 mm, and the plate spacing of the third electric field region 125 is set to be 20 mm.
Further, as shown in fig. 3, in order to make the characteristic impedance of the first metal plate 121 and the second metal plate 122 constant in each working space, additional widths of the plate widths a1, a2, a3 and the lower plates d1, d2, d3 were set, and the results are shown in table 1.
TABLE 1
| A first electric field region | Second electric field region | Third electric field region | |
| h(mm) | 100 | 50 | 20 |
| a(mm) | 300 | 150 | 60 |
| d(mm) | 3.3 | 1.65 | 0.66 |
In addition, in a specific implementation, both the first metal plate 121 and the second metal plate 122 may be aluminum plates; and/or the presence of a gas in the gas,
the thickness of the first metal plate 121 and the second metal plate 122 ranges from 1 mm to 5 mm.
The first metal plate 121 and the second metal plate 122 are made of metal materials, and the aluminum plate has the advantages of low density, light weight, good ductility, no magnetism and the like, and is suitable for the overall size miniaturization design of the boundary wave simulator 100. The thickness of the metal plate is set to be 1 mm to 5 mm, so that the shell can be protected, and the phenomenon that the uniformity of an electric field is influenced by the excessive thickness of the metal plate is avoided.
In another specific embodiment, a transition plate may be further disposed between the third electric field region 125 and the metal plates corresponding to the first electric field region 123 and the second electric field region 124, and an inclination angle of the transition plate ranges from 5 degrees to 20 degrees.
In practice, as shown in fig. 1 and 2, three working spaces are connected to form a smooth transition plate, and the inclination angle of the transition plate is 15 ° so as to make the electric field in the working spaces as uniform as possible. Thus, the dimensions of the entire bounded wave simulator 100 are 1300mm by 300mm by 100 mm.
On the basis of the above embodiment, according to another specific implementation manner of the embodiment of the present disclosure, the terminal load 130 is further defined. Specifically, as shown in fig. 1, 4 and 5, the terminal load 130 may be a distributed resistor, where the distributed resistor includes a plurality of parallel resistors, and all of the resistors are connected in parallel between the first metal plate 121 and the second metal plate 122.
When electromagnetic waves propagate in air, the wavelengths are as follows:
f is the frequency of the high voltage pulse and c is the speed of light in vacuum. When the maximum size of the device to be measured is equal to the wavelength λ of the electromagnetic wave, that is, d is equal to or greater than λ/10, the parameters of the device are no longer centralized parameters, and the condition of folding and reflecting waves needs to be considered, so that impedance matching among the pulse generator, the parallel metal plate and the terminal load 130 is very important. For example, when the frequency is 300MHz, if the maximum size of the device is larger than 0.1m, impedance matching must be considered to eliminate the refracted waves and suppress electric field distortion. As the electromagnetic wave travels along the flat panel to the end of the bounded wave simulator 100, there may be a reflected wave. The bounded wave simulator 100 requires the terminating load 130 to be designed to absorb the electromagnetic waves arriving at the termination so that the terminating load 130 can match the transmission line well and minimize reflected waves.
Compared with a single-ended resistor, the multi-distributed resistor has better absorption effect on reflected waves, and the gap between the resistors is favorable for transmission of high-frequency waves.
Specifically, as shown in fig. 5, a plurality of first connection points 132 are uniformly arranged on the first metal plate 121, and a plurality of corresponding second connection points 133 are uniformly arranged on the second metal plate 122;
a first end of each of said resistors is connected to a first connection point 132 on said first metal plate 121 and a second end of said resistor is connected to a second connection point 133 on said second metal plate 122;
a shunt wire 134 is provided between the first end of each resistor and the first connection point 132 of the adjacent resistor.
Further, all the resistors in the distributed resistors are non-inductive resistors 131, and the number of the non-inductive resistors 131 is 2 n;
each of the non-inductive resistors 131 has a resistance value of 2nZc, where Zc is the impedance of the electric field device 120.
A schematic structure for distributing the load connecting parallel metal plates is shown in fig. 5. The pair of distributed non-inductive resistors 131 are connected in parallel between the upper and lower plates by electric wires. The matching of the transmission line and the terminal load needs to consider not only characteristic impedance as a centralized parameter, but also distribution of the load.
For a parallel plate transmission line of asymmetric structure, the characteristic impedance and the ratio of the width of the upper plate to the distance between the upper and lower plates (a/h) and the ratio of the width of the lower plate to the distance between the upper and lower metal plates (d/h) with respect to the characteristic impedance of the parallel plate transmission line can be calculated by an experimental fitting formula in the following formula, wherein Z is∞377 omega is the wave impedance in vacuum,
compared with a single-ended resistor, the multi-distributed resistor has better absorption effect on reflected waves, and the gap between the resistors is favorable for transmission of high-frequency waves. Schematic structures for distributing the load connecting parallel metal plates are shown in fig. 4 and 5.
In approximating the distributed resistance with discrete resistors, the resistance of each portion and its connection location are determined by the current density in the metal plate. The current density distribution of the upper metal plate can be obtained by the following formula.
Wherein a is the width of the upper plate, J0Is the current density of the entire panel. And x is the current flowing direction of the metal plate. Here, the current density is clearly symmetrically distributed on the x-axis. Assuming that the number of resistors is 2n, the distances between adjacent connection points are x1, x2, x3 … xn, as shown in fig. 5. In this case, the current remains constant in each region, and x1, x2, x3 … xn can be calculated by the following formula:
where I is the total current in the upper metal plate. To ensure that the total resistance of the 2n distributed resistors is equal to the parallel plate characteristic impedance Zc, the resistance of each resistor R should be 2 nZc. The arrangement and spacing of the resistors is shown in fig. 5. The terminal load 130 is a distributed resistor, the resistance value of which is determined by the parallel plate characteristic wave impedance Zc, the number of which is 2n, and in order to ensure that the total resistance of the 2n distributed resistors is equal to the parallel plate characteristic wave impedance Zc, the resistance of each resistor R should be 2 nZc.
Based on the above embodiment, the pulse signal generator 110 may be a dual-exponential wave generator, and the frequency of the electric field of the bounded wave simulator 100 is in the range of 1khz to 300 mhz.
The pulse signal generator 110 may be a double-exponential wave generator, the peak value of the double-exponential wave is 80kV, the pulse rise time is 2ns, the total pulse time is 23ns, and the internal resistance of the pulse generator is 100 ohms.
Simulation experiments prove that the maximum tolerance of the uniformity of the electric field of the device to be tested in the first electric field area 123 and the second electric field area 124 is less than 3dB when the frequency is lower than 200 MHz. At 300MHz, the uniformity is slightly worse, but the maximum tolerance for electric field uniformity can be kept at 6 db. The third electric field region 125 has a smaller space than the other two electric field regions, and the edge effect has a greater influence on the electric field, resulting in poor uniformity at high frequencies. But in this space the device can maintain a maximum tolerance below 4dB of electric field uniformity over the frequency range of 1kHz to 300 MHz.
In summary, the bounded wave simulator provided by the embodiment can be widely applied to electromagnetic compatibility tests or other test experiments on electronic products such as chips, PCBs, ICs, and the like, can provide a uniform electric field for EMC tests and the like, and has the characteristics of small size, high precision, capability of providing three test areas with different electric field strengths, capability of producing a broadband uniform electric field, and the like.
The above description is only for the specific embodiments of the present disclosure, but the scope of the present disclosure is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present disclosure should be covered within the scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.
Claims (6)
1. A bounded wave simulator having three distinct electric field regions, comprising:
a pulse signal generator;
the electric field device is arranged at the transmitting port of the pulse signal generator and comprises a first metal plate and a second metal plate, three electric field areas are sequentially formed between the first metal plate and the second metal plate when a power supply is connected, the three electric field areas are arranged along the transmission direction of the pulse signal generator, and the plate intervals corresponding to the three electric field areas are different;
the terminal load is arranged at the end part of the electric field device far away from the pulse signal generator and is positioned in the pulse signal transmission direction of the pulse signal generator;
a first electric field region, a third electric field region and a second electric field region which are sequentially arranged along the transmission direction of the pulse signal are arranged between the first metal plate and the second metal plate, and the plate spacing of the third electric field region is smaller than that of the first electric field region and that of the second electric field region;
a transition plate is arranged between the third electric field region and the metal plates corresponding to the first electric field region and the second electric field region, and the inclination angle of the transition plate ranges from 5 degrees to 20 degrees;
the terminal load is a distributed resistor, the distributed resistor comprises a plurality of parallel resistors, and all the resistors are connected in parallel between the first metal plate and the second metal plate;
a plurality of first connecting points are uniformly distributed on the first metal plate, and a plurality of corresponding second connecting points are uniformly distributed on the second metal plate;
a first end of each of said resistors being connected to a first connection point on said first metal plate and a second end of said resistor being connected to a second connection point on said second metal plate;
and a shunt wire is arranged between the first end of each resistor and the first connecting point connected with the adjacent resistor.
2. The bounded wave simulator of claim 1, wherein the first electric field region, the second electric field region, and the third electric field region have a plate separation distance ranging from 20 mm to 100 mm.
3. The bounded wave simulator of claim 2, wherein the first electric field region has a plate separation distance of 100mm, the second electric field region has a plate separation distance of 50 mm, and the third electric field region has a plate separation distance of 20 mm.
4. The bounded wave simulator of any of claims 1-3, wherein the first and second metal plates are both aluminum plates; and/or the presence of a gas in the gas,
the thickness of the first metal plate and the second metal plate ranges from 1 mm to 5 mm.
5. The bounded wave simulator of claim 4, wherein all of the distributed resistances are non-inductive resistances, the number of non-inductive resistances being 2 n;
each of the non-inductive resistors has a resistance value of 2nZc, where Zc is the wave impedance of the electric field device.
6. The bounded wave simulator of claim 5, wherein the pulse signal generator is a dual-exponential wave generator, and the bounded wave simulator has an electric field frequency in a range of 1 kilohertz to 300 megahertz.
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| CN104597346B (en) * | 2015-01-14 | 2015-12-02 | 中国人民解放军军械工程学院 | Electronic equipment electromagnetic environmental effects experimental technique under bounded ripple environment |
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| CN208421091U (en) * | 2018-06-20 | 2019-01-22 | 西安交通大学 | A kind of Bounded-wave Simulator of taper-arc transition |
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| CN111323667A (en) | 2020-06-23 |
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