CN111315143A - Bonding and slitting process for banning welding conduction - Google Patents
Bonding and slitting process for banning welding conduction Download PDFInfo
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- CN111315143A CN111315143A CN202010248780.7A CN202010248780A CN111315143A CN 111315143 A CN111315143 A CN 111315143A CN 202010248780 A CN202010248780 A CN 202010248780A CN 111315143 A CN111315143 A CN 111315143A
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- circuit board
- film
- flexible circuit
- wafer
- copper foil
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0346—Organic insulating material consisting of one material containing N
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
The invention discloses a bonding and slitting process for banning welding conduction, which relates to the technical field of dental comprehensive treatment machines, and provides the following scheme aiming at the problem of high rejection rate, wherein the bonding and slitting process comprises the following steps: a cutting alignment datum line is arranged in the initial cutting direction of the flexible circuit board, a double alignment datum line is arranged on the area array probe, and the datum line is made of rolled copper wires; s2: recording the thicknesses of the exposed rolled copper foil and the routing layer copper foil in the flexible circuit board and the thicknesses of the first PI film and the second PI film, then recording the thickness of the wafer, and performing superposition calculation; the invention has the advantages of simple structure, convenient use, reduction of rejection rate, reduction of manual operation difficulty caused by small spacing, improvement of production efficiency, realization of more yield, saving of time cost and material cost and improvement of probe quality.
Description
Technical Field
The invention relates to the technical field of dental comprehensive treatment machines, in particular to a bonding and slitting process for banning welding conduction.
Background
With the rapid development of modern industry, the level of industrial automation is continuously improved, the machining process of a mechanical structure is also continuously improved, an irregular free-form surface structure is widely applied to various fields, in order to more accurately detect a structural test piece, in the traditional ultrasonic nondestructive detection process of the irregular free-form surface, an ultrasonic probe is usually manufactured into a flexible probe which can be bent to a certain degree, the flexible probe is tightly attached to a curved surface under the condition of front stress to ensure the authenticity of scanned data, and wafers and cables are communicated in the traditional flexible probe manufacturing process in a welding mode.
Along with the requirements on the center distance of the array elements of the probe are smaller and smaller, the number of the array elements is increased, the existing welding method is more and more difficult, wires are easy to break, short circuit is easy to cause during welding, the success rate is low, and further, the waste of raw materials and the uncertainty of manual operation are caused.
Disclosure of Invention
The bonding and slitting process for banning welding conduction provided by the invention solves the problem of high rejection rate.
In order to achieve the purpose, the invention adopts the following technical scheme:
a bonding and slitting process for banning welding conduction comprises the following steps:
s1: a cutting alignment reference line (X reference line) is arranged in the initial cutting direction of the flexible circuit board, a double alignment reference (X, Y reference line) is arranged on the area array probe, and the reference line adopts a rolled copper wire;
s2: recording the thicknesses of the exposed rolled copper foil and the routing layer copper foil in the flexible circuit board and the thicknesses of the first PI film and the second PI film, then recording the thickness of the wafer, and performing superposition calculation;
s3: uniformly coating a thin layer of high-adhesion conductive adhesive on the positive electrode of the wafer, adsorbing the wafer by using a plastic forceps or a small sucking disc under a microscope, then correspondingly placing the wafer on a bare rolled copper foil on a flexible circuit board, compacting and bonding the wafer by using a tool, then removing overflowing glue, and drying the glue at a lower temperature;
and S4, adhering the flexible circuit board to a blue film with certain viscosity for protection, then aligning the reference line defined in the step S1 with a special cutting machine for cutting, cutting through the wafer and the exposed rolled copper foil but not cutting through the second layer of PI film, dividing the original wafer into a plurality of independent array elements, and finishing cutting.
Preferably, the thicknesses of the bare rolled copper foil, the routing layer copper foil, the first PI film, the second PI film and the wafer in the step S2 are measured in situ, so as to ensure the cutting precision.
Preferably, the drying temperature in the step S3 is controlled to be between 40 ℃ and 50 ℃, the glue is mixed glue, and before compaction and bonding, a sponge is placed on the wafer to avoid breaking the flexible circuit board due to excessive instantaneous pressure.
A bonding type flexible circuit board which is in banning of welding conduction comprises a flexible circuit board, wherein a wafer is pasted on the flexible circuit board.
Preferably, two parallel first PI films and two parallel second PI films are arranged in the flexible circuit board, the upper side and the lower side of each first PI film are fixedly connected with a bare rolled copper foil and a routing layer copper foil respectively, and the routing layer copper foils are fixedly connected with the second PI films.
Preferably, the wafer is made of a piezoelectric composite material or piezoelectric ceramic, and the thickness of each of the first PI film and the second PI film is 0.025 mm.
The invention has the beneficial effects that:
1: utilize the cutting of bonding process and precision machine, reduce instability and the difference that unskilled degree manual operation brought, reduce the rejection rate, reduce the manual operation difficulty that the small distance caused, go up the short circuit of the too much adjacent array element that causes of tin or can cause the rosin joint to leak and weld too little, and then guarantee the stability of the quality of product, improve production efficiency, realize more output.
2: through bonding, the contact area between the crystal and the flexible circuit board is larger than that of welding, so that the reliability of the probe during detection is effectively improved, the process is simple and quick to weld, the time cost and the material cost are saved, and the quality of the probe is improved.
Drawings
FIG. 1 is a schematic diagram of a bonding and slitting process for banning welding conduction according to the present invention before cutting;
fig. 2 is a schematic diagram of a bonding and slitting process for banning welding conduction provided by the invention after cutting.
Reference numbers in the figures: 1 wafer, 2 flexible circuit boards, 3 gaps, 4 bare rolled copper foils, 5 first PI films, 6 routing layer copper foils and 7 second PI films.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Referring to fig. 1-2, a bonding and slitting process for banning welding conduction comprises the following steps:
s1: set up a cutting counterpoint datum line (X datum line) at the originated cutting direction of flexible circuit board 2, set up two counterpoint benchmarks (X, Y datum line) at the area array probe, the datum line adopts the calendering copper line, and the calendering copper line adopts the width to be less than 0.023 mm's fine rule, draws promptly fixedly when flexible circuit board 2 production, and two datum lines play the guide effect in the cutting process in later stage, guarantee the stability of cutting.
S2: the thickness of the exposed rolled copper foil 4 and the routing layer copper foil 6 in the flexible circuit board 2 and the thickness of the first PI film 5 and the second PI film 7 are recorded, then the thickness of the wafer 1 is recorded, superposition calculation is carried out, the thickness of the whole device can be obtained through measurement of the thickness of each layer, accurate data is provided for subsequent cutting depth, excessive cutting possibly generated in production is reduced,
s3: a thin layer of high-adhesion conductive adhesive is uniformly coated on a positive electrode of a wafer 1, the wafer 1 is adsorbed by a plastic forceps or a small sucker under a microscope, then the wafer 1 is correspondingly placed on a bare rolled copper foil 4 on a flexible circuit board 2, the wafer 1 is compacted and bonded by using a tool, overflowed glue is removed, the glue is dried at a lower temperature, in the placing process, the wafer 1 needs to be aligned with a base line rolled copper wire to ensure the cutting accuracy, in the gluing process, the tool needs to be uniformly coated on the wafer 1, the thickness is within a set range, in the compacting process, the tool needs to be used for compacting, excessive compression is avoided, the flexible circuit board 2 is damaged when being pasted, the drying is carried out by using a dryer, and the damage of the device caused by high temperature is avoided strictly according to the set temperature.
And S4, adhering the flexible circuit board 2 on a blue film with certain viscosity smoothly for protection, then cutting the flexible circuit board by using a special cutting machine aiming at the reference line defined in the step S1, cutting the wafer 1 and the exposed rolled copper foil 4 completely but not cutting the second layer of PI film 5, dividing the original wafer into a plurality of independent array elements, finishing cutting, adhering the blue film by using static electricity to protect the flexible circuit board 2 to a certain extent, and cutting the flexible circuit board 2 by the cutting machine according to a set depth strictly when cutting to avoid the damage of the device caused by cutting the second layer of PI film 5 due to over cutting.
In the step S2, the thicknesses of the bare rolled copper foil 4 and the routing layer copper foil 6, the thicknesses of the first PI film 5, the second PI film 7 and the wafer 1 are all measured on site, so as to ensure the cutting precision, and the thicknesses of the bare rolled copper foil 4 and the routing layer copper foil 6, the thicknesses of the first PI film 5, the second PI film 7 and the wafer 1 have corresponding thicknesses during production, but in the subsequent operation process, a certain error may occur, so that the measurement is repeated, so as to ensure the cutting precision and reduce the breakage rate.
The drying temperature in the step S3 is controlled to be between 40 ℃ and 50 ℃, the glue is mixed glue, before compaction and bonding, sponge is placed on the wafer 1, the flexible circuit board 2 is prevented from being damaged due to overlarge instantaneous pressure, the glue is mixed with various conductive adhesives, the bonding firmness and the conduction are ensured, and the glue is dried at low temperature, so that the stability of the glue is ensured.
The utility model provides a take off bonding formula flexible circuit board that welding switched on, including flexible circuit board 2, it has wafer 1 to paste on the flexible circuit board 2, be provided with two parallel first PI membrane 5 and second PI membrane 7 in the flexible circuit board 2, the upper and lower both sides of first PI membrane 5 are fixedly connected with respectively exposes calendering copper foil 4 and routing layer copper foil 6, routing layer copper foil 6 and second PI membrane fixed connection, wafer 1 adopts piezoelectricity combined material or piezoceramics, first PI membrane 5 and second PI membrane 7 thickness are 0.025mm, wherein routing layer copper foil 6 and second PI membrane 7 can set up to a plurality ofly, namely flexible circuit board 2 can adopt multilayer mechanism, in the actual use, 2 layers are the optimum level, and multilayer structure's flexible circuit board 2 can appear multiple fault in follow-up use, unless must use multilayer structure under the specific environment.
Example (b): before working, a cutting alignment reference line (X reference line) is arranged in the initial cutting direction of a flexible circuit board 2, a double alignment reference line (X, Y reference line) is arranged on an area array probe, then the thickness of a naked rolled copper foil 4 and a routing layer copper foil 6 in the flexible circuit board 2 and the thickness of a first PI film 5 and a second PI film 7 are recorded, then the thickness of a wafer 1 is recorded, superposition calculation is carried out, a thin layer of high-adhesion conductive adhesive is uniformly coated on the positive electrode of the wafer 1, the wafer 1 is adsorbed by a plastic forceps or a small sucking disc under a microscope, then the naked rolled copper foil 4 correspondingly placed on the flexible circuit board 2 is compacted and adhered by a tool, then overflowed glue is removed, the glue is dried by the temperature of 40 ℃ to 50 ℃, the flexible circuit board 2 is protected by a blue film, then a special cutting machine is used for cutting the reference line in the step, and cutting through the wafer 1 and the exposed rolled copper foil 4 but not cutting through the second layer PI film 5, dividing the original wafer into a plurality of independent array elements, and finishing cutting to form a plurality of gaps 3.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the equipment or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (6)
1. A bonding and slitting process for banning welding conduction is characterized by comprising the following steps:
s1: a cutting alignment reference line (X reference line) is arranged in the initial cutting direction of the flexible circuit board (2), a double alignment reference (X, Y reference line) is arranged on the area array probe, and the reference line is a rolled copper wire;
s2: recording the thicknesses of the bare rolled copper foil (4) and the routing layer copper foil (6) in the flexible circuit board (2) and the thicknesses of the first PI film (5) and the second PI film (7), then recording the thickness of the wafer (1), and performing superposition calculation;
s3: uniformly coating a thin layer of high-adhesion conductive adhesive on the positive electrode of the wafer 1, adsorbing the wafer (1) by using a plastic forceps or a small sucking disc under a microscope, then correspondingly placing the wafer (1) on the exposed rolled copper foil (4) on the flexible circuit board (2), compacting and bonding the wafer (1) by using a tool, then removing the overflowed glue, and drying the glue at a lower temperature;
and S4, smoothly adhering the flexible circuit board (2) to a blue film with certain viscosity for protection, then aligning the reference line defined in the step S1 with a special cutting machine for cutting, cutting through the wafer (1) and the exposed rolled copper foil (4) but not through the second layer of PI film (5), dividing the original wafer into a plurality of independent array elements, and finishing cutting to form a plurality of gaps (3).
2. The bonding and slitting process of banning welding conduction according to claim 1, wherein the thicknesses of the bare rolled copper foil (4), the routing layer copper foil (6), the first PI film (5), the second PI film (7) and the wafer (1) in step S2 are measured on site, so as to ensure the precision of slitting.
3. The bonding and slitting process of banishing solder connection according to claim 1, wherein the temperature of drying in step S3 is controlled between 40 ℃ and 50 ℃, the glue is mixed glue, and before compaction and bonding, sponge is placed on the wafer (1) to avoid breaking the flexible circuit board 2 due to excessive instantaneous pressure.
4. A bonding type flexible circuit board which is in banning of welding conduction comprises a flexible circuit board (2) and is characterized in that a wafer (1) is pasted on the flexible circuit board (2).
5. The bonding type flexible circuit board capable of achieving solder connection in a banned manner according to claim 4, wherein the flexible circuit board (2) is internally provided with a first PI film (5) and a second PI film (7) which are parallel to each other, the upper side and the lower side of the first PI film (5) are fixedly connected with a bare rolled copper foil (4) and a routing layer copper foil (6) respectively, and the routing layer copper foil (6) is fixedly connected with the second PI film (7).
6. The adhesive flexible circuit board of claim 4, wherein the wafer (1) is made of a piezoelectric composite material or a piezoelectric ceramic, and the thickness of each of the first PI film (5) and the second PI film (7) is 0.025 mm.
Priority Applications (1)
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CN202010248780.7A CN111315143A (en) | 2020-04-01 | 2020-04-01 | Bonding and slitting process for banning welding conduction |
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CN202010248780.7A CN111315143A (en) | 2020-04-01 | 2020-04-01 | Bonding and slitting process for banning welding conduction |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1990015519A1 (en) * | 1989-06-08 | 1990-12-13 | Tore Hesselgren | Method for cutting printed boards for examination of the plating result on the walls in holes arranged in the board |
CN103298252A (en) * | 2012-03-02 | 2013-09-11 | Lg伊诺特有限公司 | Printed circuit board and method for manufacturing the same |
CN103300889A (en) * | 2013-05-17 | 2013-09-18 | 深圳市理邦精密仪器股份有限公司 | Ultrasonic array probe signal acquisition component and preparation method thereof, and probe |
CN109526142A (en) * | 2018-11-30 | 2019-03-26 | 中国科学院深圳先进技术研究院 | A kind of connection method of chip and circuit board |
CN110324985A (en) * | 2019-07-10 | 2019-10-11 | 深圳市尚进电子科技有限公司 | Ultrasonic atomization piece production technology |
-
2020
- 2020-04-01 CN CN202010248780.7A patent/CN111315143A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1990015519A1 (en) * | 1989-06-08 | 1990-12-13 | Tore Hesselgren | Method for cutting printed boards for examination of the plating result on the walls in holes arranged in the board |
CN103298252A (en) * | 2012-03-02 | 2013-09-11 | Lg伊诺特有限公司 | Printed circuit board and method for manufacturing the same |
CN103300889A (en) * | 2013-05-17 | 2013-09-18 | 深圳市理邦精密仪器股份有限公司 | Ultrasonic array probe signal acquisition component and preparation method thereof, and probe |
CN109526142A (en) * | 2018-11-30 | 2019-03-26 | 中国科学院深圳先进技术研究院 | A kind of connection method of chip and circuit board |
CN110324985A (en) * | 2019-07-10 | 2019-10-11 | 深圳市尚进电子科技有限公司 | Ultrasonic atomization piece production technology |
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Application publication date: 20200619 |