CN111313873B - Comparator with a comparator circuit - Google Patents
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Abstract
比较器包括:一第一晶体管与一第二晶体管,分别用以接收一第一差分输入信号与一第二差分输入信号;一第三晶体管,耦接至该第一晶体管与一第一输出电压;一第四晶体管,耦接至该第二晶体管与一第二输出电压,其中,该第三晶体管与该第四晶体管彼此交叉耦合;一第五晶体管,耦接至该第一晶体管与一第一节点电压;一第六晶体管,耦接至该第二晶体管与一第二节点电压,其中,该第五晶体管与该第六晶体管彼此交叉耦合,通过该第三晶体管与该第四晶体管的交叉耦合对该第一输出电压与该第二输出电压进行正反馈,通过该第五晶体管与该第六晶体管的交叉耦合对该第一节点电压与该第二节点电压进行正反馈。
The comparator includes: a first transistor and a second transistor for receiving a first differential input signal and a second differential input signal respectively; a third transistor coupled to the first transistor and a first output voltage a fourth transistor coupled to the second transistor and a second output voltage, wherein the third transistor and the fourth transistor are cross-coupled to each other; a fifth transistor coupled to the first transistor and a first transistor a node voltage; a sixth transistor coupled to the second transistor and a second node voltage, wherein the fifth transistor and the sixth transistor are cross-coupled to each other through the intersection of the third transistor and the fourth transistor The coupling performs positive feedback on the first output voltage and the second output voltage, and the positive feedback on the first node voltage and the second node voltage is performed through the cross-coupling of the fifth transistor and the sixth transistor.
Description
技术领域technical field
本发明是有关于一种比较器。The present invention relates to a comparator.
背景技术Background technique
现代都会人生活作息紊乱、饮食习惯不良、工作繁忙而疏于运动使得发生心血管疾病、糖尿病、肾功能、泌尿道问题机率提高,相对罹患癌症的机率增加等等生理问题产生。Modern urban people's life disorder, poor eating habits, busy work and lack of exercise lead to increased chances of cardiovascular disease, diabetes, kidney function, urinary tract problems, and relatively increased chances of suffering from cancer and other physiological problems.
随时监测生理信息与筛检而进行早期治疗是未来预防医学所追求的要素之一,生物感测器在这观点上则具有它相对的优点以符合临床的需求。Monitoring physiological information and screening at any time for early treatment is one of the elements pursued by preventive medicine in the future. From this point of view, biosensors have their relative advantages to meet clinical needs.
因此,生物检测需求除了追求精确性外,快速取得结果的方式与测试仪器研发也成为目标之一。Therefore, in addition to the pursuit of accuracy in biological testing requirements, the method of quickly obtaining results and the development of testing instruments have also become one of the goals.
发明内容Contents of the invention
根据本发明一实施例,提出一种比较器,包括:一第一晶体管与一第二晶体管,分别用以接收一第一差分输入信号与一第二差分输入信号;一第三晶体管,耦接至该第一晶体管与一第一输出电压;一第四晶体管,耦接至该第二晶体管与一第二输出电压,其中,该第三晶体管与该第四晶体管彼此交叉耦合;一第五晶体管,耦接至该第一晶体管与一第一节点电压;一第六晶体管,耦接至该第二晶体管与一第二节点电压,其中,该第五晶体管与该第六晶体管彼此交叉耦合;以及一阻抗电路,耦接至该第三晶体管、该第四晶体管、该第五晶体管、该第六晶体管、该第一输出电压、该第二输出电压、该第一节点电压与该第二节点电压。通过该第三晶体管与该第四晶体管的交叉耦合对该第一输出电压与该第二输出电压进行正反馈。通过该第五晶体管与该第六晶体管的交叉耦合对该第一节点电压与该第二节点电压进行正反馈。According to an embodiment of the present invention, a comparator is proposed, including: a first transistor and a second transistor, respectively used to receive a first differential input signal and a second differential input signal; a third transistor, coupled to to the first transistor and a first output voltage; a fourth transistor coupled to the second transistor and a second output voltage, wherein the third transistor and the fourth transistor are cross-coupled to each other; a fifth transistor , coupled to the first transistor and a first node voltage; a sixth transistor, coupled to the second transistor and a second node voltage, wherein the fifth transistor and the sixth transistor are cross-coupled to each other; and an impedance circuit, coupled to the third transistor, the fourth transistor, the fifth transistor, the sixth transistor, the first output voltage, the second output voltage, the first node voltage and the second node voltage . The first output voltage and the second output voltage are positively fed back through the cross-coupling of the third transistor and the fourth transistor. The first node voltage and the second node voltage are positively fed back through the cross-coupling of the fifth transistor and the sixth transistor.
为了对本发明之上述及其他方面有更佳的了解,下文特举实施例,并配合所附图式详细说明如下。In order to have a better understanding of the above and other aspects of the present invention, the following specific embodiments are described in detail in conjunction with the accompanying drawings.
附图说明Description of drawings
图1显示根据本发明一示范性实施例的比较器的电路架构图。FIG. 1 shows a circuit structure diagram of a comparator according to an exemplary embodiment of the invention.
图2A与图2B分别显示根据本发明一示范性实施例的比较器的操作示意图。FIG. 2A and FIG. 2B respectively show schematic diagrams of operations of a comparator according to an exemplary embodiment of the present invention.
图3显示根据本发明一示范性实施例的比较器的增益示意图。FIG. 3 shows a gain diagram of a comparator according to an exemplary embodiment of the invention.
图4显示根据本发明一示范性实施例的比较器信号波形图与传统比较器信号波形图。FIG. 4 shows a waveform diagram of a signal waveform of a comparator according to an exemplary embodiment of the present invention and a waveform diagram of a signal waveform of a conventional comparator.
其中,附图标记Among them, reference signs
100:比较器100: Comparator
Mb、M1、M2、M3、M4、M5、M6、M7、M8、M9、M10、M11与M12:晶体管Mb, M1, M2, M3, M4, M5, M6, M7, M8, M9, M10, M11, and M12: Transistors
Vin与Vip:差分输入信号Vin and Vip: differential input signal
CK、频率信号CK, frequency signal
X、Y:输出电压X, Y: output voltage
W、Z:节点电压W, Z: node voltage
VCC、VDD:操作电压VCC, VDD: operating voltage
Vz、Vw、Vx、Vy:电压Vz, Vw, Vx, Vy: Voltage
具体实施方式Detailed ways
本说明书的技术用语是参照本技术领域的习惯用语,如本说明书对部分用语有加以说明或定义,该部分用语的解释以本说明书的说明或定义为准。本发明的各个实施例分别具有一或多个技术特征。在可能实施的前提下,本技术领域具有通常知识者可选择性地实施任一实施例中部分或全部的技术特征,或者选择性地将这些实施例中部分或全部的技术特征加以组合。The technical terms in this specification refer to the customary terms in this technical field. If some terms are explained or defined in this specification, the explanation or definition of this part of the terms shall prevail. Each embodiment of the present invention has one or more technical features respectively. On the premise of possible implementation, those skilled in the art may selectively implement some or all of the technical features in any embodiment, or selectively combine some or all of the technical features in these embodiments.
图1显示根据本发明一示范性实施例的比较器100的电路架构图。比较器100可应用于生物传感器的过取样模拟数字转换器(Oversampling Analog-to-digitalconverter)内。生物传感器假如具有2个探针,分别接触至待测者的参考端(例如手)与受测端(例如,当生物传感器用以感测心跳时,则受测端探针接触待测者的心脏)。FIG. 1 shows a circuit structure diagram of a
如图1所示,比较器100包括:晶体管Mb、M1、M2、M3、M4、M5、M6、M7、M8、M9、M10、M11与M12。As shown in FIG. 1 , the
晶体管Mb用以提供偏压电流(亦可将晶体管Mb称为偏压源)。晶体管M1与M2分别接收差分输入信号Vin与Vip,亦可称为输入级。晶体管M3-M6用以提供信号放大功能。晶体管M7-M10当成阻抗电路。晶体管M11与M12则是输出偏移(offset)抵消级。The transistor Mb is used to provide a bias current (the transistor Mb can also be called a bias source). The transistors M1 and M2 respectively receive differential input signals Vin and Vip, and can also be referred to as an input stage. Transistors M3-M6 are used to provide signal amplification. Transistors M7-M10 act as an impedance circuit. The transistors M11 and M12 are output offset cancellation stages.
晶体管Mb具有:一源极,耦接至接地端;一漏极,耦接至晶体管M1与M2的源极;以及一栅级,接收一频率信号CK。The transistor Mb has: a source coupled to the ground; a drain coupled to the sources of the transistors M1 and M2; and a gate receiving a clock signal CK.
晶体管M1具有:一源极,耦接至晶体管Mb的漏极;一漏极,耦接至晶体管M3与M5的源极;以及一栅级,接收差分输入信号Vip。The transistor M1 has: a source coupled to the drain of the transistor Mb; a drain coupled to the sources of the transistors M3 and M5; and a gate receiving the differential input signal Vip.
晶体管M2具有:一源极,耦接至晶体管Mb的漏极;一漏极,耦接至晶体管M4与M6的源极;以及一栅级,接收差分输入信号Vin。The transistor M2 has: a source coupled to the drain of the transistor Mb; a drain coupled to the sources of the transistors M4 and M6; and a gate receiving the differential input signal Vin.
晶体管M3具有:一源极,耦接至晶体管M1的漏极;一漏极,耦接至输出电压X与晶体管M4的栅级;以及一栅级,耦接至输出电压Y。The transistor M3 has: a source coupled to the drain of the transistor M1; a drain coupled to the output voltage X and the gate of the transistor M4; and a gate coupled to the output voltage Y.
晶体管M4具有:一源极,耦接至晶体管M2的漏极;一漏极,耦接至输出电压Y与晶体管M3的栅级;以及一栅级,耦接至输出电压X。The transistor M4 has: a source coupled to the drain of the transistor M2; a drain coupled to the output voltage Y and the gate of the transistor M3; and a gate coupled to the output voltage X.
晶体管M5具有:一源极,耦接至晶体管M1的漏极;一漏极,耦接至节点电压W与晶体管M6的栅级;以及一栅级,耦接至节点电压Z。The transistor M5 has: a source coupled to the drain of the transistor M1; a drain coupled to the node voltage W and the gate of the transistor M6; and a gate coupled to the node voltage Z.
晶体管M6具有:一源极,耦接至晶体管M2的漏极;一漏极,耦接至节点电压Z与晶体管M5的栅级;以及一栅级,耦接至节点电压W。The transistor M6 has: a source coupled to the drain of the transistor M2; a drain coupled to the node voltage Z and the gate of the transistor M5; and a gate coupled to the node voltage W.
晶体管M7具有:一源极,耦接至输出电压X;一漏极,耦接至操作电压VDD;以及一栅级,耦接至节点电压W。The transistor M7 has: a source coupled to the output voltage X; a drain coupled to the operating voltage VDD; and a gate coupled to the node voltage W.
晶体管M8具有:一源极,耦接至输出电压Y;一漏极,耦接至操作电压VDD;以及一栅级,耦接至节点电压Z。The transistor M8 has: a source coupled to the output voltage Y; a drain coupled to the operating voltage VDD; and a gate coupled to the node voltage Z.
晶体管M9具有:一源极,耦接至节点电压W;一漏极,耦接至操作电压VCC;以及一栅级,耦接至节点电压W。The transistor M9 has: a source coupled to the node voltage W; a drain coupled to the operating voltage VCC; and a gate coupled to the node voltage W.
晶体管M10具有:一源极,耦接至节点电压Z;一漏极,耦接至操作电压VCC;以及一栅级,耦接至节点电压Z。The transistor M10 has: a source coupled to the node voltage Z; a drain coupled to the operating voltage VCC; and a gate coupled to the node voltage Z.
晶体管M11具有:一源极,耦接至节点电压Z;一漏极,耦接至节点电压W;以及一栅级,接收频率信号(其为频率信号CK的反相信号)。The transistor M11 has: a source, coupled to the node voltage Z; a drain, coupled to the node voltage W; and a gate, receiving the frequency signal (It is the inversion signal of the frequency signal CK).
晶体管M12具有:一源极,耦接至输出电压Y;一漏极,耦接至输出电压X;以及一栅级,接收频率信号(其为频率信号CK的反相信号)。The transistor M12 has: a source, coupled to the output voltage Y; a drain, coupled to the output voltage X; and a gate, receiving the frequency signal (It is the inversion signal of the frequency signal CK).
图2A与图2B分别显示根据本发明一示范性实施例的比较器的操作示意图。图2A显示当频率信号CK为逻辑1时,根据本发明一示范性实施例的比较器的操作示意图。图2B显示当频率信号CK为逻辑0时,根据本发明一示范性实施例的比较器的操作示意图。FIG. 2A and FIG. 2B respectively show schematic diagrams of operations of a comparator according to an exemplary embodiment of the present invention. FIG. 2A is a schematic diagram showing the operation of the comparator according to an exemplary embodiment of the present invention when the clock signal CK is
如图2A所示,当频率信号CK为逻辑1时,晶体管Mb为导通,且晶体管M11与M12为关闭,此时的比较器100的晶体管M1-M10可以进行动态比较器输出动作,其细节于此不重述。As shown in FIG. 2A, when the frequency signal CK is
如图2B所示,当频率信号CK为逻辑0时,晶体管Mb为关闭,且晶体管M11与M12为导通。由于晶体管M11与M12为导通,使得输出电压X=输出电压Y=节点电压W=节点电压Z=VCC。此时的比较器100处于清除状态,以抵消输出偏移。As shown in FIG. 2B , when the clock signal CK is logic 0, the transistor Mb is turned off, and the transistors M11 and M12 are turned on. Since the transistors M11 and M12 are turned on, the output voltage X=the output voltage Y=the node voltage W=the node voltage Z=VCC. At this time, the
图3显示根据本发明一示范性实施例的比较器的增益示意图。于本发明一示范性实施例中,晶体管M3、M5、M7与M9可以视为一反相器,而晶体管M4、M6、M8与M10可以视为另一反相器,此两个反相器的增益为(A0,τ0),故而,对于输出电压X与输出电压Y的增益为G1,其中,公式如下:FIG. 3 shows a gain diagram of a comparator according to an exemplary embodiment of the invention. In an exemplary embodiment of the present invention, the transistors M3, M5, M7 and M9 can be regarded as an inverter, and the transistors M4, M6, M8 and M10 can be regarded as another inverter, and the two inverters The gain of is (A0, τ0), therefore, the gain of output voltage X and output voltage Y is G1, where the formula is as follows:
亦即,当频率信号CK=1时,通过晶体管M3与M4的交叉耦合对输出电压X与输出电压Y进行正反馈。That is, when the frequency signal CK=1, the output voltage X and the output voltage Y are positively fed back through the cross-coupling of the transistors M3 and M4.
此外,于本发明示范性实施例中,当频率信号CK=1时,更可以通过晶体管M5与M6的交叉耦合对节点电压W与节点电压Z进行正反馈。也就是说,于本发明示范性实施例中,可以同时对(1)节点电压W与节点电压Z;以及(2)输出电压X与输出电压Y进行正反馈。如此可以减少晶体管M7-M10所造成的再生时间(regeneration time)。加速输出电压X和Y,使后级输出(未示出)更快反应,提升操作频率,增加整体电路带宽。细言之,由于晶体管M9与M10的阻抗较大,节点电压W与Z的电压比输出电压X与Y的电压小,由晶体管M3与M4先提供第一次反馈,晶体管M5与M6才提供第二次的反馈(但第二次反馈的电压增益比较小)。如此一来,同时做第一次与第二次反馈,通过节点电压W与Z的第一次反馈提升第二次反馈内使用到较大阻抗的M9与M10反应速度,之后影响输出电压X与Y以及整体电路的操作带宽。In addition, in the exemplary embodiment of the present invention, when the frequency signal CK=1, the node voltage W and the node voltage Z can be positively fed back through the cross-coupling of the transistors M5 and M6. That is to say, in the exemplary embodiment of the present invention, positive feedback can be performed on (1) the node voltage W and the node voltage Z; and (2) the output voltage X and the output voltage Y at the same time. In this way, the regeneration time caused by the transistors M7-M10 can be reduced. Speeding up the output voltages X and Y makes the post-stage output (not shown) respond faster, increases the operating frequency, and increases the overall circuit bandwidth. In detail, due to the large impedance of transistors M9 and M10, the voltages of node voltages W and Z are smaller than the voltages of output voltages X and Y, the first feedback is provided by transistors M3 and M4, and the second feedback is provided by transistors M5 and M6. Secondary feedback (but the voltage gain of the second feedback is relatively small). In this way, the first and second feedbacks are performed at the same time, and the first feedback of the node voltage W and Z improves the response speed of M9 and M10, which use larger impedances in the second feedback, and then affects the output voltage X and Y and the operating bandwidth of the overall circuit.
如图3所示,本发明实施例比较器的增益放大G为G=G1*G2,其中,G1=gm3*ro7=gm4*ro8,其中,gm3与gm4分别代表晶体管M3与M4的跨导值,而ro7与ro8分别代表晶体管M7与M8的等效电阻值,G2=gm5*ro9=gm6*ro10,其中,gm5与gm6分别代表晶体管M5与M6的跨导值,而ro9与ro10分别代表晶体管M9与M10的等效电阻值。故而,本发明实施例比较器可有效提升增益,加速比较器来输出比较结果。As shown in Figure 3, the gain amplification G of the comparator in the embodiment of the present invention is G=G1*G2, wherein G1=gm3*ro7=gm4*ro8, wherein gm3 and gm4 represent the transconductance values of transistors M3 and M4 respectively , and ro7 and ro8 respectively represent the equivalent resistance values of transistors M7 and M8, G2=gm5*ro9=gm6*ro10, wherein, gm5 and gm6 represent the transconductance values of transistors M5 and M6 respectively, and ro9 and ro10 represent transistors The equivalent resistance value of M9 and M10. Therefore, the comparator in the embodiment of the present invention can effectively increase the gain and speed up the comparator to output the comparison result.
图4显示根据本发明一示范性实施例的比较器信号波形图与传统比较器信号波形图。于图4中,Vw、Vz、Vx与Vy分别代表节点电压W、节点电压Z、输出电压X与输出电压Y。如图4所示,比较传统输出电压X与本发明实施例输出电压X可以看出,本发明实施例输出电压X有较快反应。FIG. 4 shows a waveform diagram of a signal waveform of a comparator according to an exemplary embodiment of the present invention and a waveform diagram of a signal waveform of a conventional comparator. In FIG. 4 , Vw, Vz, Vx, and Vy represent node voltage W, node voltage Z, output voltage X, and output voltage Y, respectively. As shown in FIG. 4 , comparing the conventional output voltage X with the output voltage X of the embodiment of the present invention, it can be seen that the output voltage X of the embodiment of the present invention has a faster response.
综上所述,虽然本发明已以实施例揭露如上,然其并非用以限定本发明。本发明所属技术领域中具有通常知识者,在不脱离本发明的精神和范围内,当可作各种的更动与润饰。因此,本发明的保护范围当视后附的权利要求书所界定者为准。To sum up, although the present invention has been disclosed by the above embodiments, it is not intended to limit the present invention. Those skilled in the art of the present invention can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be defined by the appended claims.
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CN101252348A (en) * | 2007-02-20 | 2008-08-27 | 尔必达存储器株式会社 | Voltage controlled oscillator |
CN106803753A (en) * | 2015-11-25 | 2017-06-06 | 德克萨斯仪器股份有限公司 | Ultra low power reduces the clocked comparator of coupling |
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TW423219B (en) * | 1999-04-14 | 2001-02-21 | Admtek Inc | Offset comparator and method for forming same |
US7208980B2 (en) * | 2005-01-21 | 2007-04-24 | Broadcom Corporation | Comparator with offset compensation |
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GB2529686A (en) * | 2014-08-29 | 2016-03-02 | Ibm | High-speed comparator for analog-to-digital converter |
US10491205B2 (en) * | 2017-12-15 | 2019-11-26 | Qualcomm Incorporated | Comparator for globally distributed regulators |
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CN1088004A (en) * | 1992-11-16 | 1994-06-15 | Rca汤姆森许可公司 | Differential comparator circuit |
CN101252348A (en) * | 2007-02-20 | 2008-08-27 | 尔必达存储器株式会社 | Voltage controlled oscillator |
CN106803753A (en) * | 2015-11-25 | 2017-06-06 | 德克萨斯仪器股份有限公司 | Ultra low power reduces the clocked comparator of coupling |
CN107888171A (en) * | 2017-11-16 | 2018-04-06 | 上海北京大学微电子研究院 | A kind of high speed is low to recalcitrate noise dynamic comparer and circuit |
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