CN111313845A - Waveguide bridge-based analog predistorter for tunable millimeter wave traveling wave tube - Google Patents
Waveguide bridge-based analog predistorter for tunable millimeter wave traveling wave tube Download PDFInfo
- Publication number
- CN111313845A CN111313845A CN201911249316.3A CN201911249316A CN111313845A CN 111313845 A CN111313845 A CN 111313845A CN 201911249316 A CN201911249316 A CN 201911249316A CN 111313845 A CN111313845 A CN 111313845A
- Authority
- CN
- China
- Prior art keywords
- waveguide
- schottky diode
- bridge
- pass filter
- tunable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Microwave Amplifiers (AREA)
Abstract
The invention discloses an analog predistorter for a tunable millimeter wave traveling wave tube based on a waveguide bridge, which comprises a waveguide orthogonal bridge structure, a nonlinear generation structure and a transition structure; the waveguide orthogonal bridge structure adopts a standard waveguide design and comprises a waveguide orthogonal bridge; the nonlinear generation structure comprises a first Schottky diode, a second Schottky diode, a first radio frequency choke grounding circuit, a second radio frequency choke grounding circuit, a first tunable microstrip line and a second tunable microstrip line; the transition structure mainly plays a role in connecting a waveguide orthogonal bridge structure and a nonlinear generation structure. The invention adopts a waveguide orthogonal bridge, an E-plane probe transition structure, an active biased Schottky diode and a tunable microstrip circuit, and can realize a tunable predistortion curve which is suitable for TWTA with nonlinear distortion characteristics of different degrees in a higher millimeter wave frequency band by designing the length and the width of the tunable microstrip and adjusting the bias voltage and the bias resistance of each Schottky diode.
Description
Technical Field
The invention relates to an analog predistorter for a tunable millimeter wave traveling wave tube based on a waveguide bridge.
Background
In recent years, the field of global communication satellites is under vigorous development, emerging low-medium orbit communication satellite constellations rise rapidly, and the establishment of a heaven-earth integrated network becomes an inevitable trend of future communication field development. Meanwhile, in order to meet the requirement of high-speed and high-capacity data transmission, the communication frequency gradually rises, the communication frequency gradually develops from the C, Ku frequency band to the Ka, V and E frequency bands of millimeter waves, and the W frequency band satellite communication also becomes the most important scientific frontier frequency domain in space communication application.
In the transceiving link of the whole millimeter wave satellite communication system, the modulation signal needs to be linearly amplified so as to accurately demodulate the signal, and any amplitude or phase distortion of the modulation signal can increase the bit error rate. With the application of new modulation technology, the requirement on the linearity of the system is higher and higher, and the linearity of the system is mainly influenced by the final millimeter wave high-power amplifier. In the field of satellite communication, a traveling wave tube power amplifier (TWTA) is widely used due to its advantages of high gain, high power, wide bandwidth, etc., however, when the high power amplifier is pushed to a saturation state, a signal may generate severe nonlinear distortion while obtaining high output power, resulting in degraded performance of a communication system. The output power back-off method can be adopted to reduce the nonlinear distortion of the signal and maintain the normal operation of the system. The power back-off method not only reduces efficiency but also greatly increases cost. Therefore, linearization techniques that improve nonlinear distortion while maintaining high output power and efficiency of the power amplifier have become a focus of attention in the industry.
The analog predistortion technology is a linearization technology for correcting nonlinear distortion of a signal brought by a power amplifier by carrying out predistortion before the signal enters the power amplifier, and is widely applied by virtue of the characteristics of simple principle, convenience in realization, high stability, wide bandwidth, obvious improvement effect and the like. The analog predistorter is a radio frequency circuit designed by using devices with nonlinear characteristics, such as schottky diodes, field effect transistors, etc., so as to generate a transmission characteristic inverse to the nonlinear characteristic of the power amplifier, and can be generally divided into a transmission type, a reflection type and a loop type according to different circuit structures.
The design of three structural forms of the present analog predistorter is developed respectively, the structure of a microstrip circuit is mainly adopted, the structure of the transmission type analog predistorter is simple, and a nonlinear device is mainly connected in series or in parallel on a main transmission line to generate a transmission characteristic which is inverse to the nonlinear characteristic of a power amplifier; the reflection type generally combines a bridge structure, loads nonlinear devices on a straight-through port and a coupling port of the bridge, and generates required transmission characteristics by utilizing the synthesis of two paths of reflection signals; the loop type is based on the theory of vector synthesis, taking the two-way type as an example, a phase shifter and an attenuator are generally adopted to form a linear branch, a nonlinear device is utilized to form a nonlinear branch, and the required transmission characteristics are generated through the vector synthesis of two signals.
The currently applied analog predistorters still have many disadvantages:
(1) the transmission structure and the reflection structure are often less in adjustable parameters, and the tunability of a predistortion curve is often poor;
(2) the loop type structure is complex in structure and high in adjusting difficulty.
(3) The application frequency is low, and the device mainly works in a microwave frequency band and a millimeter wave frequency low-end frequency band, and cannot be applied to higher frequencies (such as a W frequency band) due to the limitation of a processing technology and the limitation of device performance.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a traveling wave analog predistorter for a tunable millimeter wave tube based on a waveguide bridge, which adopts a waveguide orthogonal bridge, an E-plane probe transition structure, an active biased Schottky diode and a tunable microstrip circuit, can realize a tunable predistortion curve of TWTA (time-to-time variation and offset) with different degrees of nonlinear distortion characteristics in a higher millimeter wave frequency band by designing the length and width of the tunable microstrip and adjusting the bias voltage and the bias resistance of each Schottky diode.
The purpose of the invention is realized by the following technical scheme: the tunable millimeter wave traveling wave tube analog predistorter based on the waveguide bridge comprises a waveguide orthogonal bridge structure, a nonlinear generation structure and a transition structure;
the waveguide orthogonal bridge structure comprises a waveguide orthogonal bridge which is electromagnetically coupled through a waveguide orthogonal bridge wide-surface coupling gap; the waveguide orthogonal bridge comprises 4 ports which are respectively a waveguide orthogonal bridge input port, a waveguide orthogonal bridge isolation port, a waveguide orthogonal bridge through port and a waveguide orthogonal bridge coupling port; the orthogonal bridge through port and the waveguide orthogonal bridge coupling port are respectively connected with a first waveguide microstrip probe transition structure and a second waveguide microstrip probe transition structure of the transition structure;
the nonlinear generation structure comprises a first Schottky diode pad, a second Schottky diode pad, a first Schottky diode, a second Schottky diode, a first tunable microstrip line, a second tunable microstrip line, a first radio frequency choke low-pass filter, a second radio frequency choke low-pass filter, a first through hole grounding structure and a second through hole grounding structure;
the anode of the first Schottky diode is welded on the first Schottky diode bonding pad, and the cathode of the first Schottky diode is welded on the first tunable microstrip line; the first Schottky diode pad is connected with a first microstrip line in a first waveguide microstrip probe transition structure of the transition structure, and the first tunable microstrip line is connected with a first radio frequency choke low-pass filter; the first radio frequency choking low-pass filter is connected with the first through hole grounding structure, and the first radio frequency choking low-pass filter and the first through hole grounding structure jointly form a first radio frequency choking grounding circuit;
the anode of the second Schottky diode is welded on a pad of the second Schottky diode, and the cathode of the second Schottky diode is welded on the second tunable microstrip line; the second Schottky diode pad is connected with a second microstrip line in a second waveguide microstrip probe transition structure of the transition structure, and the second tunable microstrip line is connected with a second radio frequency choke low-pass filter; the second radio frequency choking low-pass filter is connected with the second through hole grounding structure, and the second radio frequency choking low-pass filter and the second through hole grounding structure jointly form a second radio frequency choking grounding circuit;
the transition structure comprises a first waveguide microstrip probe transition structure, a second waveguide microstrip probe transition structure, a first CMRC low-pass filter, a second CMRC low-pass filter, a first direct current bonding pad and a second direct current bonding pad; the first direct current pad is connected with the first CMRC low-pass filter to jointly form a first direct current bias circuit; the second direct current pad is connected with the second CMRC low-pass filter to jointly form a second direct current bias circuit; the first CMRC low-pass filter is connected with the first waveguide microstrip probe transition structure; and the second CMRC low-pass filter is connected with the second waveguide microstrip probe transition structure.
Further, the input signal is input into the waveguide quadrature bridge through the input port of the waveguide quadrature bridge, the input signal is divided into two orthogonal signals at the through port of the waveguide quadrature bridge and the coupling port of the waveguide quadrature bridge, the two orthogonal signals are respectively loaded onto the first Schottky diode and the second Schottky diode through the first waveguide microstrip probe transition structure and the second waveguide microstrip probe transition structure, the reflection coefficient of the corresponding branch is changed by utilizing the nonlinear change of the input impedance of the Schottky diode, and therefore two reflected signals are generated and synthesized and output at the isolation port of the waveguide quadrature bridge through the first waveguide microstrip probe transition structure and the second waveguide microstrip probe transition structure.
Further, the first direct current pad, the first CMRC low-pass filter, the first waveguide microstrip probe transition structure, the first microstrip line, the first schottky diode pad, the first schottky diode, the first tunable microstrip line, the first radio frequency choke low-pass filter and the first through hole grounding structure are sequentially arranged on the first Rogers RT/duroid5880 substrate; the second direct current bonding pad, the second CMRC low-pass filter, the second waveguide microstrip probe transition structure, the second microstrip line, the second Schottky diode bonding pad, the second Schottky diode, the second tunable microstrip line, the second radio frequency choking low-pass filter and the second through hole grounding structure are sequentially arranged on the second Rogers RT/duroid5880 substrate.
The invention has the beneficial effects that: the invention adopts the waveguide orthogonal bridge, the E-plane probe transition structure, the active biased Schottky diode and the tunable microstrip circuit, and can realize the tunable predistortion curve of the TWTA applicable to nonlinear distortion characteristics of different degrees in a higher millimeter wave frequency band (such as a W frequency band) by designing the length and the width of the tunable microstrip and adjusting the bias voltage and the bias resistance of each Schottky diode, and the tunable predistortion curve has simple structure and convenient adjustment.
Drawings
Fig. 1 is a schematic structural diagram of an analog predistorter for a tunable millimeter wave traveling wave tube according to the present invention;
FIG. 2 is a diagram of simulation results of predistortion curves of an analog predistorter in an embodiment of a W-band;
description of reference numerals: 1-waveguide quadrature bridge input port; 2. a waveguide quadrature bridge isolation port; 3. a quadrature bridge pass-through port; 4. a waveguide quadrature bridge coupling port; 5. a waveguide quadrature bridge; 6. a waveguide orthogonal bridge wide-surface coupling gap; 7. a first waveguide microstrip probe transition structure; 8. a second waveguide microstrip probe transition structure; 9. a first microstrip line; 10. a second microstrip line; 11. a first schottky diode pad; 12. a second schottky diode pad; 13. a first Schottky diode; 14. a second Schottky diode; 15-a first tunable microstrip line; 16-a second tunable microstrip line; 17-a first radio frequency choke low pass filter; 18-a second radio frequency choke low pass filter; 19-a first via ground structure; 20-a second via grounding structure; 21-a first CMRC low pass filter; 22-a second CMRC low pass filter; 23-a first dc pad; 24-a second direct current pad (24); 25-first Rogers RT/duroid5880 substrate; 26-second Rogers RT/duroid5880 substrate.
Detailed Description
The invention provides an analog predistorter for a tunable millimeter wave traveling wave tube based on a waveguide bridge, which can generate a tunable predistortion curve in a higher millimeter wave frequency band (W frequency band). The Schottky diode is a nonlinear generating device, so that the complexity and the cost of a control circuit are reduced; compared with the traditional microstrip circuit structure, the waveguide orthogonal bridge structure has lower process requirements and simpler realization at a higher millimeter wave frequency band (such as a W wave band); the two Schottky diodes are independently used for carrying out direct current bias, and a microstrip line with tunable length and width is added, so that adjustable parameters are increased; the direct current bias circuit is realized in a distributed parameter low-pass filter mode, and is easy to integrate into an integral circuit by avoiding using lumped parameter elements; and the input and output ports directly adopt standard waveguides, so that the system has high applicability. The integral analog predistorter has the advantages of small insertion loss, high adjustability of a predistortion curve, simple realization of a high-frequency band, low cost and the like.
The technical scheme of the invention is as follows: an analog predistorter for a tunable millimeter wave traveling wave tube based on a waveguide bridge is composed of three parts, wherein the first part is a waveguide orthogonal bridge structure; the second part is a non-linear generating structure; the third portion is a transition structure.
The first part adopts a standard waveguide design and comprises a waveguide quadrature bridge;
the second part is designed by adopting a micro-strip structure and comprises a first Schottky diode, a second Schottky diode, a first radio frequency choking grounding circuit, a second radio frequency choking grounding circuit, a first tunable micro-strip line and a second tunable micro-strip line;
the third part comprises a first direct current bias circuit, a second direct current bias circuit, a first waveguide-microstrip probe structure and a second waveguide-microstrip probe structure, and the third part mainly plays a role in connecting the first part and the second part.
The technical scheme of the invention is further explained by combining the attached drawings. As shown in fig. 1, the analog predistorter for a tunable millimeter wave traveling wave tube based on a waveguide bridge of the present invention includes a waveguide orthogonal bridge structure, a nonlinear generation structure and a transition structure;
the waveguide orthogonal bridge structure comprises a waveguide orthogonal bridge 5, the waveguide orthogonal bridge 5 is designed by adopting a standard WR10 waveguide, the waveguide orthogonal bridge 5 is electromagnetically coupled through 7 waveguide orthogonal bridge wide-face coupling gaps 6, and the waveguide orthogonal bridge wide-face coupling gaps 6 are positioned in the middle of the waveguide orthogonal bridge 5; the waveguide orthogonal bridge 5 comprises 4 ports which are respectively a waveguide orthogonal bridge input port 1, a waveguide orthogonal bridge isolation port 2, a waveguide orthogonal bridge through port 3 and a waveguide orthogonal bridge coupling port 4; the orthogonal bridge through port 3 and the waveguide orthogonal bridge coupling port 4 are respectively connected with a first waveguide microstrip probe transition structure 7 and a second waveguide microstrip probe transition structure 8 of the transition structure;
the nonlinear generation structure comprises a first Schottky diode pad 11, a second Schottky diode pad 12, a first Schottky diode 13, a second Schottky diode 14, a first tunable microstrip line 15, a second tunable microstrip line 16, a first radio frequency choke low-pass filter 17, a second radio frequency choke low-pass filter 18, a first through hole grounding structure 19 and a second through hole grounding structure 20;
the anode of the first Schottky diode 13 is welded on the first Schottky diode bonding pad 11, and the cathode is welded on the first tunable microstrip line 15; the first Schottky diode pad 11 is connected with a first microstrip line 9 in a first waveguide microstrip probe transition structure of the transition structure, and the first tunable microstrip line 15 is connected with a first radio frequency choke low-pass filter 17; the first radio frequency choking low-pass filter 17 is connected with the first through hole grounding structure 19, and the first radio frequency choking low-pass filter 17 and the first through hole grounding structure 19 jointly form a first radio frequency choking grounding circuit;
the anode of the second schottky diode 14 is welded on the second schottky diode bonding pad 12, and the cathode is welded on the second tunable microstrip line 16; a second Schottky diode pad 12 is connected with a second microstrip line 10 in a second waveguide microstrip probe transition structure of the transition structure, and a second tunable microstrip line 16 is connected with a second radio frequency choke low-pass filter 18; the second radio frequency choking low-pass filter 18 is connected with the second through hole grounding structure 20, and the second radio frequency choking low-pass filter 18 and the second through hole grounding structure 20 jointly form a second radio frequency choking grounding circuit;
the transition structure comprises a first waveguide microstrip probe transition structure 7, a second waveguide microstrip probe transition structure 8, a first CMRC low-pass filter 21, a second CMRC low-pass filter 22, a first direct current pad 23 and a second direct current pad 24; the first direct current pad 23 is connected with the first CMRC low-pass filter 21 to jointly form a first direct current bias circuit; the second direct current pad 24 is connected with the second CMRC low-pass filter 22 to jointly form a second direct current bias circuit; the first CMRC low-pass filter 21 is connected with the first waveguide microstrip probe transition structure 7; the second CMRC low pass filter 22 is connected to the second waveguide microstrip probe transition structure 8.
Further, the input signal is input into the waveguide quadrature bridge 5 through the waveguide quadrature bridge input port 1, and is divided into two orthogonal signals at the waveguide quadrature bridge through port 3 and the waveguide quadrature bridge coupling port 4, and the two orthogonal signals are respectively loaded onto the first schottky diode 13 and the second schottky diode 14 through the first waveguide microstrip probe transition structure 7 and the second waveguide microstrip probe transition structure 8, and the reflection coefficients of the corresponding branches are changed by utilizing the nonlinear change of the input impedance of the schottky diodes, so that two reflected signals are generated, and the two reflected signals are synthesized and output at the waveguide quadrature bridge isolation port 2 through the first waveguide microstrip probe transition structure 7 and the second waveguide microstrip probe transition structure 8.
Further, the first direct current pad 23, the first CMRC low-pass filter 21, the first waveguide microstrip probe transition structure 7, the first microstrip line 9, the first schottky diode pad 11, the first schottky diode 13, the first tunable microstrip line 15, the first radio frequency choke low-pass filter 17, and the first through-hole grounding structure 19 are sequentially disposed on the first Rogers RT/duroid5880 substrate 25; the second direct current pad 24, the second CMRC low-pass filter 22, the second waveguide microstrip probe transition structure 8, the second microstrip line 10, the second schottky diode pad 12, the second schottky diode 14, the second tunable microstrip line 16, the second radio frequency choke low-pass filter 18 and the second via grounding structure 20 are sequentially arranged on a second Rogers RT/duroid5880 substrate 26.
The input impedance of the Schottky diode is related to the input power of a radio-frequency signal and the direct current bias state, a first direct current bias circuit consisting of a first direct current pad 23 and a first CMRC low-pass filter 21 and a second direct current bias circuit consisting of a second direct current pad 24 and a second CMRC low-pass filter 22 are used for providing bias states for the first Schottky diode 13 and the second Schottky diode 14 respectively, and meanwhile, the leakage can be prevented from occurring through the first direct current bias circuit and the second direct current bias circuit when the radio-frequency signal is transmitted to the first waveguide microstrip probe transition structure 7 and the second waveguide microstrip probe transition structure 8 by utilizing the higher stop band suppression of the CMRC low-pass filters; the first rf choke grounding circuit composed of the first rf choke low-pass filter 17 and the first via grounding structure 19 and the second rf choke grounding circuit composed of the second rf choke low-pass filter 18 and the second via grounding structure 20 function to provide a dc path to the first schottky diode 13 and the second schottky diode 14, respectively, and also function to recover rf energy. In order to increase the tunable characteristic of the circuit, a first tunable microstrip line 15 and a second tunable microstrip line 16 are connected to the first schottky diode 13 and the second schottky diode 14, and the length and the width of the tunable microstrip line are adjusted, so that the reflection coefficient of the corresponding branch can be adjusted.
Fig. 2 is a simulation result of the predistortion curve of the predistorter in the W-band embodiment: (a) voltage tunable gain amplitude characteristics at 95 GHz; (b) voltage tunable gain phase characteristics at 95 GHz; (c) gain amplitude characteristic within 92.5-97.5 frequency; (d) gain phase characteristics within a frequency range of 92.5 to 97.5. As can be seen from the figure, the predistorter with the structure can generate predistortion characteristics of gain and phase expansion within a certain bandwidth of a millimeter wave W band, and the voltage tunable performance of the gain and phase expansion is very excellent.
It will be appreciated by those of ordinary skill in the art that the embodiments described herein are intended to assist the reader in understanding the principles of the invention and are to be construed as being without limitation to such specifically recited embodiments and examples. Those skilled in the art can make various other specific changes and combinations based on the teachings of the present invention without departing from the spirit of the invention, and these changes and combinations are within the scope of the invention.
Claims (3)
1. The tunable millimeter wave traveling wave tube analog predistorter based on the waveguide bridge is characterized by comprising a waveguide orthogonal bridge structure, a nonlinear generation structure and a transition structure;
the waveguide orthogonal bridge structure comprises a waveguide orthogonal bridge (5), and the waveguide orthogonal bridge (5) is electromagnetically coupled through a waveguide orthogonal bridge wide-surface coupling slot (6); the waveguide orthogonal bridge (5) comprises 4 ports which are respectively a waveguide orthogonal bridge input port (1), a waveguide orthogonal bridge isolation port (2), a waveguide orthogonal bridge through port (3) and a waveguide orthogonal bridge coupling port (4); the orthogonal bridge through port (3) and the waveguide orthogonal bridge coupling port (4) are respectively connected with a first waveguide microstrip probe transition structure (7) and a second waveguide microstrip probe transition structure (8) of the transition structure;
the nonlinear generation structure comprises a first Schottky diode pad (11), a second Schottky diode pad (12), a first Schottky diode (13), a second Schottky diode (14), a first tunable microstrip line (15), a second tunable microstrip line (16), a first radio frequency choking low-pass filter (17), a second radio frequency choking low-pass filter (18), a first through hole grounding structure (19) and a second through hole grounding structure (20);
the anode of the first Schottky diode (13) is welded on the first Schottky diode pad (11), and the cathode of the first Schottky diode is welded on the first tunable microstrip line (15); the first Schottky diode pad (11) is connected with a first microstrip line (9) in a first waveguide microstrip probe transition structure of the transition structure, and a first tunable microstrip line (15) is connected with a first radio frequency choke low-pass filter (17); the first radio frequency choking low-pass filter (17) is connected with the first through hole grounding structure (19), and the first radio frequency choking low-pass filter (17) and the first through hole grounding structure (19) jointly form a first radio frequency choking grounding circuit;
the anode of the second Schottky diode (14) is welded on the second Schottky diode bonding pad (12), and the cathode is welded on the second tunable microstrip line (16); a second Schottky diode pad (12) is connected with a second microstrip line (10) in a second waveguide microstrip probe transition structure of the transition structure, and a second tunable microstrip line (16) is connected with a second radio frequency choke low-pass filter (18); the second radio frequency choking low-pass filter (18) is connected with the second through hole grounding structure (20), and the second radio frequency choking low-pass filter (18) and the second through hole grounding structure (20) jointly form a second radio frequency choking grounding circuit;
the transition structure comprises a first waveguide microstrip probe transition structure (7), a second waveguide microstrip probe transition structure (8), a first CMRC low-pass filter (21), a second CMRC low-pass filter (22), a first direct current pad (23) and a second direct current pad (24); the first direct current pad (23) is connected with the first CMRC low-pass filter (21) to jointly form a first direct current bias circuit; the second direct current pad (24) is connected with the second CMRC low-pass filter (22) to jointly form a second direct current bias circuit; the first CMRC low-pass filter (21) is connected with the first waveguide microstrip probe transition structure (7); and the second CMRC low-pass filter (22) is connected with the second waveguide microstrip probe transition structure (8).
2. The waveguide bridge based tunable millimeter wave traveling wave tube analog predistorter of claim 1, it is characterized in that an input signal is input into a waveguide quadrature bridge (5) through a waveguide quadrature bridge input port (1), the waveguide orthogonal bridge through port (3) and the waveguide orthogonal bridge coupling end (4) are divided into two orthogonal signals, the first waveguide microstrip probe transition structure (7) and the second waveguide microstrip probe transition structure (8) are respectively loaded on the first Schottky diode (13) and the second Schottky diode (14), the nonlinear change of the input impedance of the Schottky diodes is utilized to change the reflection coefficient of the corresponding branch, thereby generating two paths of reflection signals, and the two paths of reflection signals are synthesized and output at the waveguide orthogonal bridge isolation port (2) through the first waveguide microstrip probe transition structure (7) and the second waveguide microstrip probe transition structure (8).
3. The waveguide bridge-based analog predistorter for the tunable millimeter wave traveling wave tube according to claim 1, wherein the first direct current pad (23), the first CMRC low-pass filter (21), the first waveguide microstrip probe transition structure (7), the first microstrip line (9), the first schottky diode pad (11), the first schottky diode (13), the first tunable microstrip line (15), the first radio frequency choke low-pass filter (17), and the first through hole grounding structure (19) are sequentially disposed on a first rogerstr srt/dual 5880 substrate (25); the second direct current pad (24), the second CMRC low-pass filter (22), the second waveguide microstrip probe transition structure (8), the second microstrip line (10), the second Schottky diode pad (12), the second Schottky diode (14), the second tunable microstrip line (16), the second radio frequency choking low-pass filter (18) and the second through hole grounding structure (20) are sequentially arranged on the second Rogers RT/duroid5880 substrate (26).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911249316.3A CN111313845B (en) | 2019-12-09 | 2019-12-09 | Waveguide bridge-based analog predistorter for tunable millimeter wave traveling wave tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911249316.3A CN111313845B (en) | 2019-12-09 | 2019-12-09 | Waveguide bridge-based analog predistorter for tunable millimeter wave traveling wave tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111313845A true CN111313845A (en) | 2020-06-19 |
| CN111313845B CN111313845B (en) | 2022-05-17 |
Family
ID=71161916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911249316.3A Active CN111313845B (en) | 2019-12-09 | 2019-12-09 | Waveguide bridge-based analog predistorter for tunable millimeter wave traveling wave tube |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111313845B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113630092A (en) * | 2021-08-20 | 2021-11-09 | 电子科技大学 | Reflection type adjustable predistorter |
| CN114069246A (en) * | 2021-12-02 | 2022-02-18 | 四川大学 | Rectification surface for absorbing electromagnetic waves based on periodic structure |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101997488A (en) * | 2009-08-10 | 2011-03-30 | 三星电机株式会社 | Vector modulator with high control resolution |
| CN103368504A (en) * | 2013-06-25 | 2013-10-23 | 电子科技大学 | Reflection-type nonlinear pre-distortion circuit |
| US20150341000A1 (en) * | 2014-05-23 | 2015-11-26 | Mitsubishi Electric Corporation | Linearizer |
| CN105897191A (en) * | 2016-05-24 | 2016-08-24 | 中国科学院电子学研究所 | Predistortion linearizer and application of the predistortion linearizer |
| CN107517039A (en) * | 2017-07-24 | 2017-12-26 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Millimeter wave GaN power amplifier radio frequency distortion linearizing devices |
-
2019
- 2019-12-09 CN CN201911249316.3A patent/CN111313845B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101997488A (en) * | 2009-08-10 | 2011-03-30 | 三星电机株式会社 | Vector modulator with high control resolution |
| CN103368504A (en) * | 2013-06-25 | 2013-10-23 | 电子科技大学 | Reflection-type nonlinear pre-distortion circuit |
| US20150341000A1 (en) * | 2014-05-23 | 2015-11-26 | Mitsubishi Electric Corporation | Linearizer |
| CN105897191A (en) * | 2016-05-24 | 2016-08-24 | 中国科学院电子学研究所 | Predistortion linearizer and application of the predistortion linearizer |
| CN107517039A (en) * | 2017-07-24 | 2017-12-26 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Millimeter wave GaN power amplifier radio frequency distortion linearizing devices |
Non-Patent Citations (2)
| Title |
|---|
| HAILIN DENG等: "Analog Predistortion Linearizer With Independently Tunable Gain and Phase Conversions for Ka-Band TWTA", 《IEEE TRANSACTIONS ON ELECTRON DEVICES》 * |
| 李文朝等: "基于二极管Ka波段的新型可调预失真器", 《强激光与粒子束》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113630092A (en) * | 2021-08-20 | 2021-11-09 | 电子科技大学 | Reflection type adjustable predistorter |
| CN113630092B (en) * | 2021-08-20 | 2023-10-17 | 电子科技大学 | Reflection type adjustable predistorter |
| CN114069246A (en) * | 2021-12-02 | 2022-02-18 | 四川大学 | Rectification surface for absorbing electromagnetic waves based on periodic structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111313845B (en) | 2022-05-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5291148A (en) | Gain linearization with coplanar waveguide | |
| EP3474443B1 (en) | Amplifier power combiner with slotline impedance transformer | |
| CN111313845B (en) | Waveguide bridge-based analog predistorter for tunable millimeter wave traveling wave tube | |
| JP7264623B2 (en) | load modulation amplifier | |
| US6806792B2 (en) | Broadband, four-bit, MMIC phase shifter | |
| CN110649896B (en) | Multi-band analog predistortion circuit applied to wireless communication | |
| CN111988003A (en) | General structure of analog predistorter suitable for TWTA and SSPA | |
| Zhao et al. | Theory and design methodology for reverse-modulated dual-branch power amplifiers applied to a 4G/5G broadband GaN MMIC PA design | |
| CN117040451A (en) | Balanced power amplifier and method for improving linearity | |
| CN107276541B (en) | Variable vector mixed superposition type predistortion linearization method | |
| Nathalie et al. | Fully integrated reflector-based analog predistortion for Ku-band power amplifiers linearization | |
| CN113630092B (en) | Reflection type adjustable predistorter | |
| Belluot et al. | A 40 W Ka-band RF amplification chain for space telecommunication SSPA applications | |
| CN113055324B (en) | Amplitude and phase independently adjustable analog predistorter suitable for SSPA | |
| Qin et al. | A w-band diode-based analog predistortion linearizer for traveling wave tube amplifiers | |
| Katz et al. | The evolution of linearizers for high power amplifiers | |
| Yoon et al. | Improvement of broadband feedforward amplifier using photonic bandgap | |
| Götthans et al. | Linearity and efficiency enhancement techniques for satellite communications | |
| Zhao et al. | Microwave diode-based MMIC analog predistorter for SSPA with independently tunable phase | |
| CN112087204A (en) | Power divider and method for improving efficiency of power amplifier backspacing area by using load modulation technology | |
| Mochumbe et al. | Design of a Load Modulated Balanced Amplifier with a Two-Stage Control Power Amplifier | |
| CN113659938B (en) | Analog predistorter | |
| CN118300546A (en) | Broadband analog predistorter | |
| CN212875746U (en) | Ku-band satellite communication power amplifier linearizer | |
| KR20050038711A (en) | Doherty amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |