CN111313238B - Tapered perovskite micro-nano crystal laser and preparation method thereof - Google Patents
Tapered perovskite micro-nano crystal laser and preparation method thereof Download PDFInfo
- Publication number
- CN111313238B CN111313238B CN202010133021.6A CN202010133021A CN111313238B CN 111313238 B CN111313238 B CN 111313238B CN 202010133021 A CN202010133021 A CN 202010133021A CN 111313238 B CN111313238 B CN 111313238B
- Authority
- CN
- China
- Prior art keywords
- perovskite
- micro
- solvent
- tapered
- nano crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002159 nanocrystal Substances 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000013078 crystal Substances 0.000 claims abstract description 27
- 239000002904 solvent Substances 0.000 claims abstract description 21
- 239000002243 precursor Substances 0.000 claims abstract description 18
- 239000012296 anti-solvent Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 8
- 239000000243 solution Substances 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 17
- 239000011521 glass Substances 0.000 claims description 11
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 10
- 150000004820 halides Chemical class 0.000 claims description 10
- -1 methyl ammonium halide Chemical class 0.000 claims description 7
- 238000005086 pumping Methods 0.000 claims description 6
- 229920006395 saturated elastomer Polymers 0.000 claims description 5
- 238000002425 crystallisation Methods 0.000 claims description 3
- 230000008025 crystallization Effects 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 125000005843 halogen group Chemical group 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 2
- 239000011259 mixed solution Substances 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 4
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 31
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 16
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 description 15
- ISWNAMNOYHCTSB-UHFFFAOYSA-N methanamine;hydrobromide Chemical compound [Br-].[NH3+]C ISWNAMNOYHCTSB-UHFFFAOYSA-N 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000002086 nanomaterial Substances 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 239000012046 mixed solvent Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000001149 cognitive effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000643 oven drying Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/36—Structure or shape of the active region; Materials used for the active region comprising organic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/06—LPE
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Luminescent Compositions (AREA)
Abstract
本发明公开了一种锥状钙钛矿微纳晶激光器及其制备方法。该方法是通过溶液法实现的，包括如下步骤：首先配置一定浓度的钙钛矿前驱体溶液，在室温下，将溶液定量滴加到含有该钙钛矿材料晶种的衬底上，置于反溶剂的密闭环境中，一段时间后，待溶剂挥发，即可得到锥状的钙钛矿微纳晶体。本发明所述的制备方法所用器材及设备简单，快速方便，操作简单，成本低，可重复性非常高，形貌好，具有优越的激光行为，较高纯度的微纳晶体提高了半导体激光器的各项性能，降低半导体激光器阈值，提高激光器稳定性，锥状晶体抑制了轴向的谐振，在角向能产生良好的回音壁模式单模激光，具有较高的应用价值。
The invention discloses a tapered perovskite micro-nano crystal laser and a preparation method thereof. The method is realized by a solution method, which includes the following steps: firstly, a certain concentration of perovskite precursor solution is prepared; In the closed environment of the anti-solvent, after a period of time, the conical perovskite micro-nano crystals can be obtained after the solvent is volatilized. The equipment and equipment used in the preparation method of the invention are simple, fast and convenient, easy to operate, low in cost, very high in repeatability, good in shape, and have excellent laser behavior, and the high-purity micro-nano crystal improves the performance of the semiconductor laser. Various properties, reducing the threshold value of semiconductor lasers, improving laser stability, tapered crystals suppress axial resonance, and can produce good single-mode laser in the angular direction of the whispering gallery mode, which has high application value.
Description
Technical Field
The invention belongs to the field of micron and nanometer semiconductor photoelectric materials, and particularly relates to a conical perovskite micro-nano crystal laser and a preparation method thereof.
Background
The micron/nanometer semiconductor photoelectric material is a novel photoelectric functional material and is a hot subject of current scientific research. Because the size of the micro-nano structure unit is in the micron-nano level, the physical and chemical properties of the micro-nano material and the micro-nano structure are different from those of microscopic atoms, molecules and macroscopic objects, and therefore the cognitive field of people is extended to the intermediate field between the macroscopic objects and the microscopic objects. In the field of microelectronics, smaller size means more complex chips, faster reaction, lower price, lower energy consumption, better performance. However, the micro-nano material device still has a certain distance from wide industrial application, and further theoretical research and technical challenges are needed.
The lead trihalide perovskite has longer carrier service life, longer carrier diffusion length and higher carrier mobility, and is a photoelectric material with great development prospect. The excellent performances enable the halogenated lead perovskite material to be widely applied to the aspects of solar cells, light emitting diodes, photoelectric detectors, lasers and the like. At present, although the CH has various regular shapes3NH3PbX3Perovskite micro-nano lasers (X is halogen) have been studied preliminarily, for example, in the literature (Zhu, H.; Fu, Y.; Meng, F.; Wu, X.; Gong, Z.; Ding, Q.; Gustafsson, M. V.; Trinh, M. T.; Jin, S.; Zhu, X. Y., Lead halide perovskite nanolaser with low laser threshold and high quality factors).Nature Materials 2015,14636.), report perovskite nanometer line laser, but the FP chamber that the nanometer line constitutes is mostly with multimode laser outgoing, only the short chamber that the shorter nanometer line (length is less than 10 μm) constitutes can realize single mode laser outgoing, and the short chamber again can lead to gain inadequately, and the outgoing laser intensity is low.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention aims to provide a tapered perovskite micro-nano crystal laser and a preparation method thereof.
The invention aims to provide a method for preparing a tapered perovskite micro-nano crystal laser.
The purpose of the invention is realized by at least one of the following technical solutions.
The method for preparing the tapered perovskite micro-nano crystal laser is a solution method, and comprises the following steps:
preparing perovskite precursor solution with a certain concentration, wherein the fluorescent material used by the invention is organic-inorganic hybrid perovskite CH3NH3PbX3The solvent is chromatographic grade DMF and GBL, and is mixed according to a certain proportion. At room temperature, dropwise adding a certain amount of prepared perovskite precursor solution into the solution containing CH3NH3PbX3A seed crystal on a substrate and placing it in a chamber containing CH3NH3PbX3Saturated evaporation of insoluble solventsStanding for a period of time in a sealed environment of steam, and volatilizing the solvent to obtain the tapered perovskite micro-nano crystal. And transferring the crystal onto a glass sheet, and pumping by 400nm femtosecond laser to obtain laser emitted by the tapered perovskite micro-nano crystal after reaching a threshold value.
The invention provides a method for preparing a tapered perovskite micro-nano crystal laser, which comprises the following steps:
(1) adding a certain amount of lead halide and methyl ammonium halide into a solvent, and uniformly mixing to obtain a perovskite precursor solution;
(2) dropwise adding the perovskite precursor solution obtained in the step (1) on a substrate containing perovskite material seed crystals to obtain a dropwise added substrate;
(3) and (3) placing the substrate dropwise added in the step (2) in an anti-solvent gas environment, diffusing the anti-solvent into the dropwise added precursor solution to cause crystallization, and volatilizing the solvent to obtain the tapered perovskite micro-nano crystal on the substrate, namely the tapered perovskite micro-nano crystal laser, which has better laser behavior.
Further, the perovskite material in the step (1) is organic-inorganic hybrid perovskite CH3NH3PbX3And X is halogen.
Further, the solvent in the step (1) is a mixed solution of DMF and GBL; the volume ratio of DMF to GBL is 1: 20-1: 8. the DMF (dimethylformamide) and GBL (gamma-butyrolactone) are both in chromatographic grade.
Further, the concentration of the precursor solution in the step (1) is 10-30 mmol/L.
Further, the substrate containing the perovskite material seed crystal in the step (2) is a glass substrate containing the perovskite material seed crystal; the perovskite material seed crystal in the step (2) is the perovskite material seed crystal in the step (1); the perovskite material seed crystal is obtained by reacting a lead halide film on a glass substrate with a methyl ammonium halide solution.
Further, the lead halide film is obtained by dripping 0.2-1.5 mol/L lead halide solution on a substrate and drying; the concentration of the methyl ammonium halide solution is 4-20 mg/mL. The solvent of the lead halide solution is chromatographic grade DMF. The solvent of the methyl ammonium halide solution is chromatographic grade isopropanol.
Preferably, the drying is: oven drying at 90 deg.C for 30 min.
Further, the pressure of the anti-solvent gas environment in the step (3) is the saturated vapor pressure at room temperature. The environment is a relatively temperature stable environment.
Further, the antisolvent in the step (3) is chloroform; the volatilization time is longer than 12h so as to completely volatilize the liquid.
The invention provides a conical perovskite micro-nano crystal laser prepared by the preparation method, and the laser emitted by the conical perovskite micro-nano crystal can be obtained by pumping through 400nm femtosecond laser.
Compared with the prior art, the invention has the following advantages and beneficial effects:
(1) according to the preparation method provided by the invention, organic and inorganic hybrid perovskite is used as a raw material, and crystallization is controlled by an anti-solvent diffusion method to prepare a micro-nano crystal;
(2) according to the tapered perovskite micro-nano crystal laser provided by the invention, as the crystal is tapered in the axial direction (such as a micron line in fig. 1, fig. 2 and fig. 3), the end face loss is very large, the start oscillation of an axial FP mode is inhibited, the radial dimension of the crystal can support the start oscillation of a Whispering Gallery Mode (WGM), the radial dimension is small, the laser obtained by resonance is generally single-mode laser (such as fig. 4), and under the condition of uniform pumping, the laser can be emitted in the radial direction of the whole crystal (such as an optical microscope photo in fig. 4), so that the single-mode laser with higher power can be obtained. In addition, the laser can also be applied to scenes such as a laser array and the like;
(3) according to the preparation method provided by the invention, the used instruments and equipment are simple to operate, the preparation method is short in time consumption and small in raw material amount, multiple targets of economy, environmental protection, energy conservation and the like are realized, single-mode laser with high energy can be obtained, and the application of a micro-nano laser is facilitated.
Drawings
FIG. 1 is a scanning electron micrograph of a tapered perovskite micro-nano crystal laser obtained in example 1;
FIG. 2 is a scanning electron micrograph of the tapered perovskite micro-nano crystal laser obtained in example 2;
FIG. 3 is a scanning electron micrograph of the tapered perovskite micro-nano crystal laser obtained in example 3;
FIG. 4 shows the laser photograph, laser spectrum and scanning electron micrograph of the sample obtained by pumping the obtained product with 400nm femtosecond laser.
Detailed Description
The following examples are presented to further illustrate the practice of the invention, but the practice and protection of the invention is not limited thereto. It is noted that the processes described below, if not specifically described in detail, are all realizable or understandable by those skilled in the art with reference to the prior art. The reagents or apparatus used are not indicated to the manufacturer, and are considered to be conventional products available by commercial purchase.
In the following examples, organic-inorganic hybrid perovskite material MAPbBr is used3For illustration purposes.
Example 1
0.1145g of lead bromide and 0.035g of methylammonium bromide were weighed and dissolved in a mixed solvent of 1mL of DMF and 8mL of GBL to obtain a precursor solution. Preparing 0.2mol/L lead bromide solution, wherein the solvent is DMF. 4mg/mL of methyl ammonium bromide solution is prepared, and the solvent is isopropanol. 10 mu L of lead bromide solution is dripped on a cleaned glass sheet (with the size of 20 x 20 mm), and the glass sheet is placed in an oven at 90 ℃ to be dried to obtain a lead bromide film. Placing the obtained lead bromide film in 2mL of 4mg/mL methyl ammonium bromide solution for reaction for 5min to obtain MAPbBr3And (4) taking out the seed crystal, dripping 30 mu L of precursor solution on the seed crystal, placing the seed crystal in a closed container containing chloroform saturated steam, and standing for 24 hours. After the solvent is volatilized, the cone-shaped micro-nano crystal (as shown in figure 1) can be obtained. The micro-nano crystal is a conical micro-nano crystal laser.
Example 2
0.1145g of lead bromide and 0.035g of methylammonium bromide were weighed and dissolved in a mixed solvent of 1mL of DMF and 9mL of GBL to obtain a precursor solution. Preparing 0.5mol/L lead bromide solution, wherein the solvent is DMF.8mg/mL of methyl ammonium bromide solution is prepared, and the solvent is isopropanol. 10 mu L of lead bromide solution is dripped on a cleaned glass sheet (with the size of 20 x 20 mm), and the glass sheet is placed in an oven at 90 ℃ to be dried to obtain a lead bromide film. Placing the obtained lead bromide film in 2mL of 8mg/mL methyl ammonium bromide solution for reaction for 5min to obtain MAPbBr3And (4) taking out the seed crystal, dripping 30 mu L of precursor solution on the seed crystal, placing the seed crystal in a closed container containing chloroform saturated steam, and standing for 24 hours. After the solvent is volatilized, the cone-shaped micro-nano crystal (as shown in figure 2) can be obtained. The micro-nano crystal is a conical micro-nano crystal laser.
Example 3
0.1145g of lead bromide and 0.035g of methylammonium bromide were weighed and dissolved in a mixed solvent of 1mL of DMF and 20mL of GBL to obtain a precursor solution. 1.5mol/L lead bromide solution is prepared, and the solvent is DMF. Preparing 20mg/mL methyl ammonium bromide solution, wherein the solvent is isopropanol. 10 mu L of lead bromide solution is dripped on a cleaned glass sheet (with the size of 20 x 20 mm), and the glass sheet is placed in an oven at 90 ℃ to be dried to obtain a lead bromide film. Placing the obtained lead bromide film in 2mL of 20mg/mL methyl ammonium bromide solution for reaction for 5min to obtain MAPbBr3And (4) taking out the seed crystal, dripping 30 mu L of precursor solution on the seed crystal, placing the seed crystal in a closed container containing chloroform saturated steam, and standing for 24 hours. After the solvent is volatilized, the cone-shaped micro-nano-crystal (as shown in figure 3) can be obtained. The micro-nano crystal is a conical micro-nano crystal laser.
The axial length of the micro-nano crystals is mainly distributed in the range of 5-30 μm, and the radial dimension is in the range of 1-3 μm. The laser emitted by the conical micro-nano crystal can be obtained by pumping with 400nm femtosecond laser.
The above examples are only preferred embodiments of the present invention, which are intended to be illustrative and not limiting, and those skilled in the art should understand that they can make various changes, substitutions and alterations without departing from the spirit and scope of the invention.
Claims (8)
1. The preparation method of the conical perovskite micro-nano crystal laser is characterized by comprising the following steps:
(1) adding lead halide and methyl ammonium halide into a solvent, and uniformly mixing to obtain a perovskite precursor solution;
(2) dropwise adding the perovskite precursor solution obtained in the step (1) on a substrate containing perovskite material seed crystals to obtain a dropwise added substrate; the substrate containing the perovskite material seed crystal is a glass substrate containing the perovskite material seed crystal; the perovskite material seed crystal is the perovskite material seed crystal in the step (1); the perovskite material seed crystal is obtained by reacting a lead halide film on a glass substrate with a methyl ammonium halide solution;
(3) and (3) placing the substrate dropwise added in the step (2) in an anti-solvent gas environment, diffusing the anti-solvent into the dropwise added precursor solution to cause crystallization, and volatilizing the solvent to obtain the tapered perovskite micro-nano crystal on the substrate, namely the tapered perovskite micro-nano crystal laser.
2. The preparation method of the tapered perovskite micro-nano crystal laser according to claim 1, wherein the perovskite precursor material in the step (1) is organic-inorganic hybrid perovskite CH3NH3PbX3And X is halogen.
3. The preparation method of the tapered perovskite micro-nano crystal laser according to claim 1, wherein the solvent in the step (1) is a mixed solution of DMF and GBL; the volume ratio of DMF to GBL is 1: 20-1: 8.
4. the preparation method of the tapered perovskite micro-nano crystal laser according to claim 1, wherein the concentration of the perovskite precursor solution in the step (1) is 10-30 mmol/L.
5. The preparation method of the conical perovskite micro-nano crystal laser according to claim 1, wherein the lead halide thin film is obtained by dripping 0.2-1.5 mol/L lead halide solution on a substrate and drying; the concentration of the methyl ammonium halide solution is 4-20 mg/mL.
6. The method for preparing a tapered perovskite micro-nano crystal laser according to claim 1, wherein the anti-solvent gas environment in the step (3) is saturated steam at room temperature.
7. The preparation method of the tapered perovskite micro-nano crystal laser according to claim 1, wherein the anti-solvent in the step (3) is chloroform; the anti-solvent is an insoluble solvent of perovskite; the volatilization time is longer than 12h, so that the liquid is completely volatilized.
8. The conical perovskite micro-nano crystal laser prepared by the preparation method of any one of claims 1 to 7 is characterized in that laser emitted by conical perovskite micro-nano crystals can be obtained by pumping with 400nm femtosecond laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010133021.6A CN111313238B (en) | 2020-02-29 | 2020-02-29 | Tapered perovskite micro-nano crystal laser and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010133021.6A CN111313238B (en) | 2020-02-29 | 2020-02-29 | Tapered perovskite micro-nano crystal laser and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111313238A CN111313238A (en) | 2020-06-19 |
| CN111313238B true CN111313238B (en) | 2022-03-25 |
Family
ID=71145342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010133021.6A Active CN111313238B (en) | 2020-02-29 | 2020-02-29 | Tapered perovskite micro-nano crystal laser and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111313238B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112349846A (en) * | 2019-08-09 | 2021-02-09 | 杭州纤纳光电科技有限公司 | Seed crystal and method for preparing perovskite solar cell by using same |
| CN114292195A (en) * | 2021-12-29 | 2022-04-08 | 青岛科技大学 | Method for designing white-light perovskite through strain regulation |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103746078A (en) * | 2014-01-27 | 2014-04-23 | 北京大学 | Perovskite solar cell and preparation method thereof |
| CN105140419A (en) * | 2015-07-03 | 2015-12-09 | 北京大学 | Quick film forming method based on low-concentration organic-inorganic hybrid perovskite solution |
| CN105405979A (en) * | 2015-12-03 | 2016-03-16 | 中国科学院半导体研究所 | Preparation method of organic and inorganic hybrid perovskite single crystal |
| CN108034989A (en) * | 2017-12-04 | 2018-05-15 | 山东大学 | The method and device of controllable anti-solvent diffusion method for growing large scale methylamine bromine leading crystal |
| CN108649121A (en) * | 2018-05-11 | 2018-10-12 | 南京理工大学 | The method that dynamic spin coating prepares perovskite thin film |
| CN109196147A (en) * | 2016-04-22 | 2019-01-11 | 普林斯顿大学托管委员会 | Organic and inorganic mixing perovskite nanocrystal and preparation method thereof |
| CN109980093A (en) * | 2019-04-01 | 2019-07-05 | 华南理工大学 | A kind of spraying prepares the method and perovskite thin film of perovskite thin film |
| CN110387227A (en) * | 2018-04-20 | 2019-10-29 | 京东方科技集团股份有限公司 | Perovskite thin film, perovskite electroluminescent device and preparation method thereof, and display device |
| CN110387223A (en) * | 2019-07-11 | 2019-10-29 | 浙江大学 | A kind of lead halide/lead halide perovskite composite micro-nano material and preparation method thereof |
| CN110776906A (en) * | 2019-10-25 | 2020-02-11 | 华南理工大学 | Perovskite thin film with stable photoluminescence efficiency and preparation method thereof |
-
2020
- 2020-02-29 CN CN202010133021.6A patent/CN111313238B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103746078A (en) * | 2014-01-27 | 2014-04-23 | 北京大学 | Perovskite solar cell and preparation method thereof |
| CN105140419A (en) * | 2015-07-03 | 2015-12-09 | 北京大学 | Quick film forming method based on low-concentration organic-inorganic hybrid perovskite solution |
| CN105405979A (en) * | 2015-12-03 | 2016-03-16 | 中国科学院半导体研究所 | Preparation method of organic and inorganic hybrid perovskite single crystal |
| CN109196147A (en) * | 2016-04-22 | 2019-01-11 | 普林斯顿大学托管委员会 | Organic and inorganic mixing perovskite nanocrystal and preparation method thereof |
| CN108034989A (en) * | 2017-12-04 | 2018-05-15 | 山东大学 | The method and device of controllable anti-solvent diffusion method for growing large scale methylamine bromine leading crystal |
| CN110387227A (en) * | 2018-04-20 | 2019-10-29 | 京东方科技集团股份有限公司 | Perovskite thin film, perovskite electroluminescent device and preparation method thereof, and display device |
| CN108649121A (en) * | 2018-05-11 | 2018-10-12 | 南京理工大学 | The method that dynamic spin coating prepares perovskite thin film |
| CN109980093A (en) * | 2019-04-01 | 2019-07-05 | 华南理工大学 | A kind of spraying prepares the method and perovskite thin film of perovskite thin film |
| CN110387223A (en) * | 2019-07-11 | 2019-10-29 | 浙江大学 | A kind of lead halide/lead halide perovskite composite micro-nano material and preparation method thereof |
| CN110776906A (en) * | 2019-10-25 | 2020-02-11 | 华南理工大学 | Perovskite thin film with stable photoluminescence efficiency and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111313238A (en) | 2020-06-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Wang et al. | Ion exchange/insertion reactions for fabrication of efficient methylammonium tin iodide perovskite solar cells | |
| CN105331362B (en) | A method for preparing inorganic halogen perovskite fluorescent quantum dots with high yield at room temperature | |
| CN111313238B (en) | Tapered perovskite micro-nano crystal laser and preparation method thereof | |
| CN107195710A (en) | A kind of method that the inorganic perovskite thin film of high-luminous-efficiency is prepared based on one-step method | |
| CN109796976B (en) | A kind of copper-doped red light perovskite quantum dots and preparation method thereof | |
| CN101752093B (en) | Preparation method of photonic crystal structure thin film electrode for dye solar cell | |
| Liu et al. | Dual‐emission of fluorescence and room‐temperature phosphorescence for ratiometric and colorimetric oxygen sensing and detection based on dispersion of pure organic thianthrene dimer in polymer host | |
| Dunn et al. | Molecules in glass: probes, ordered assemblies, and functional materials | |
| CN108336230A (en) | A kind of purely inorganic cubic phase perovskite solar cell of efficient stable and preparation method thereof | |
| CN112724970A (en) | Preparation method of PVB (polyvinyl butyral) coated metal halide perovskite solid film material | |
| CN112186106A (en) | Method for preparing methylamine lead-iodine perovskite film by using green nontoxic anti-solvent | |
| CN109749740B (en) | Photoluminescent material, preparation method and application thereof | |
| Liu et al. | Lead-free double perovskite halide fluorescent oxygen sensor with high stability | |
| CN109734122A (en) | A kind of preparation method preparing perovskite nanowire crystal based on ion exchange | |
| CN101503215A (en) | Preparation of photochromic MoO3 film | |
| CN115537196B (en) | High-stability perovskite material and preparation method and application thereof | |
| CN115465884B (en) | Yellow light all-inorganic perovskite quantum dot and preparation method and application thereof | |
| CN108754609A (en) | A kind of preparation method of high quality large scale hybrid inorganic-organic perovskite monocrystalline | |
| CN105777645B (en) | A kind of complex LIFM-CL1 based on ESIPT characteristics and its preparation method and application | |
| JP2811160B2 (en) | Phosphor and manufacturing method thereof | |
| CN112038449A (en) | CsPbX prepared by solution spraying method3Film, its preparation and use | |
| CN113571651A (en) | Solution medium annealing method for preparing perovskite thin film photoelectric device | |
| CN116375673B (en) | Bimodal fluorescent material with mechanochromism and preparation method thereof | |
| CN113193127A (en) | Ytterbium and erbium co-doped perovskite film and application thereof in photoelectric detector | |
| Ding et al. | In Situ Green Synthesis of Ni‐Doped CsPbBr3@ SiO2 Composites with Superior Stability for Fabrication of White Light‐Emitting Diodes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |