CN111312875A - Vertical-structure LED chip of whole-surface reflector and preparation method thereof - Google Patents

Vertical-structure LED chip of whole-surface reflector and preparation method thereof Download PDF

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Publication number
CN111312875A
CN111312875A CN202010251193.3A CN202010251193A CN111312875A CN 111312875 A CN111312875 A CN 111312875A CN 202010251193 A CN202010251193 A CN 202010251193A CN 111312875 A CN111312875 A CN 111312875A
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layer
metal
led chip
vertical structure
whole surface
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CN202010251193.3A
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李国强
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Heyuan Choicore Photoelectric Technology Co ltd
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Heyuan Choicore Photoelectric Technology Co ltd
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Priority to CN202010251193.3A priority Critical patent/CN111312875A/en
Publication of CN111312875A publication Critical patent/CN111312875A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings

Abstract

The invention discloses a vertical structure LED chip of a whole-surface reflector and a preparation method thereof, and the structure comprises: the semiconductor device comprises an n electrode, an epitaxial layer, an insulating layer, a reflecting metal layer, a protective layer metal, a bonding layer metal and a supporting conductive substrate. Specifically, a first bulge is arranged at the top of the bonding layer metal, the protective layer metal comprises a first groove and a second bulge, the reflective metal layer comprises a second groove and a third bulge, the insulating layer is arranged on the outer side of the third bulge, and the epitaxial layer is arranged on the insulating layer and the reflective metal layer; the insulating layer is arranged on the outer side of the third bulge of the reflecting metal layer, so that metal ions can be effectively prevented from migrating to the side face of the LED chip, and meanwhile, the insulating layer is adopted to block the migration of the metal ions of the reflecting metal layer, so that the reflecting metal layer does not need to be retracted, the reflecting area of the reflecting metal layer is larger than that of the existing LED chip with the vertical structure, and the brightness of the LED chip is effectively improved.

Description

Vertical-structure LED chip of whole-surface reflector and preparation method thereof
Technical Field
The invention relates to the technical field of LEDs, in particular to a vertical-structure LED chip of a whole-surface reflector and a preparation method thereof.
Background
At present, Light Emitting Diodes (LEDs) are widely used in indoor and outdoor lighting, car lights, and handheld lighting. A Light Emitting Diode (LED) is a device that converts electrical energy into Light energy by using a PN junction, and has the advantages of good controllability, fast start, long life, high Light Emitting efficiency, safety, energy saving, environmental protection, and the like, and is called a green Light source or a fourth generation Light source. Not only drives the deep revolution of the lighting industry, but also leads to the innovation of the display screen field. With the development of the LED industry, high power LEDs are more and more favored by people. In the high-power LED, the vertical-structure LED chip is favored by various markets because of the high current passing capability and the good light emitting direction.
However, the existing vertical structure LED chip has the following disadvantages: (1) the reflector of the LED chip with the vertical structure mainly uses Ag, the Ag is active in nature and is easy to migrate to the side face of the LED chip, and the side face of the LED chip is provided with a PN junction, so that metal ions migrate to the side face of the LED chip, short-circuit electric leakage can be formed, and the chip is invalid; (2) the existing LED chip with a vertical structure can cover the reflector by using metal with low reflectivity so as to protect Ag, but the protection metal with low reflectivity at the edge of Ag absorbs light seriously, and the area of the reflection metal needs to be retracted so as to be smaller than the area of GaN, thus the reflectivity is low.
Disclosure of Invention
The invention aims to provide a vertical structure LED chip of a whole-surface reflector and a preparation method thereof, and solves the problems of easy electric leakage and low reflectivity of the conventional vertical structure LED chip.
The invention is realized by the following technical scheme:
a vertical structure LED chip of a whole-surface reflector comprises an n electrode, an epitaxial layer, an insulating layer, a reflecting metal layer, a protective layer metal, a bonding layer metal and a supporting conductive substrate; the bonding layer metal is arranged on the supporting conductive substrate, a first bulge is arranged at the top of the bonding layer metal, the protective layer metal comprises a first groove and a second bulge, the first groove is matched with the first bulge, the reflective metal layer comprises a second groove and a third bulge, the second groove is matched with the second bulge, the insulating layer is arranged on the outer side of the third bulge, the epitaxial layer is arranged on the insulating layer and the reflective metal layer, and the n electrode is arranged on the epitaxial layer.
As a further alternative of the vertical structure LED chip of the whole-surface reflector, the epitaxial layer is a light-emitting GaN layer grown on a silicon-based or sapphire or SiC substrate.
As a further alternative of the vertical structure LED chip of the whole surface reflector, the insulating layer is SiO2, and the thickness of the insulating layer is 100nm-10000 nm.
As a further alternative of the vertical structure LED chip of the whole-surface reflector, the reflecting metal layer is a NiAg laminated layer, and the thickness of the reflecting metal layer is 100nm-1000 nm.
As a further alternative of the vertical structure LED chip of the whole surface reflector, the protective layer metal is a multi-metal laminated layer of Ti, TiW, Pt, Ni, Cr and Au, and the thickness of the protective layer metal is 100nm-5000 nm.
As a further alternative of the LED chip with the vertical structure of the whole-surface reflector, the bonding layer metal is a laminated layer or eutectic alloy of Ni and Sn, and the thickness of the bonding layer metal is 100nm-5000 nm.
As a further alternative of the vertical structure LED chip of the whole-surface reflector, the supporting conductive substrate is monocrystalline silicon or polycrystalline silicon, and the thickness of the supporting conductive substrate is 50-400 um.
As a further alternative of the vertical structure LED chip of the whole-surface reflector, the n electrode is a lamination of one or more metals of Cr, Ti, Al, Ni, Au and Pt, and the thickness of the n electrode is 0.5-10 um.
A method for preparing a vertical structure LED chip of a whole-surface reflector comprises the following steps:
step S1, growing an epitaxial layer on the silicon or sapphire or SiC substrate to form an LED epitaxial wafer;
step S2, growing an insulating layer on the LED epitaxial wafer;
step S3, spin-coating photoresist on the insulating layer, and performing a photolithography process to form a square or rectangular ring;
step S4, removing the places where the insulation layer is not needed;
step S5, covering a reflective metal layer on the whole surface of the insulating layer and the epitaxial layer;
step S6, annealing the reflective metal layer;
step S7, after annealing, covering the whole surface with a protective layer metal and a bonding layer metal;
step S8, manufacturing a bonding layer metal on the supporting conductive substrate;
step S9, bonding the samples obtained in step S7 and step S8;
step S10, removing the substrate;
step S11, carrying out rough treatment on the epitaxial layer;
step S12, creating a square or rectangular pattern corresponding to and complementary to step S3;
step S13, making a pattern of an n electrode on the pattern of the step S12, covering the whole surface with n electrode metal, and stripping the n electrode;
and step S14, obtaining a single LED chip.
As a further alternative of the method for manufacturing the vertical structure LED chip with the full-area reflector, in step S4, after removing the portions where the insulating layer is not required, the photoresist is removed.
The invention has the beneficial effects that:
the insulating layer is arranged on the outer side of the third bulge of the reflecting metal layer, and the metal ions can be effectively prevented from migrating to the side face of the LED chip, so that the short-circuit electric leakage condition caused by the fact that the metal ions touch PN junctions on the side face of the LED chip is avoided, meanwhile, the insulating layer is adopted to block the migration of the metal ions of the reflecting metal layer, the reflecting metal layer does not need to be retracted, the reflecting area of the reflecting metal layer is larger than that of the existing LED chip with the vertical structure, the brightness of the LED chip is effectively improved, and the problem of low reflectivity of the existing LED chip with the vertical structure is solved.
Drawings
FIG. 1 is a schematic diagram of a vertical structure LED chip of the whole reflector according to the present invention;
FIG. 2 is a schematic diagram of a metal composition of a bonding layer in a vertical structure LED chip of the whole reflector according to the present invention;
FIG. 3 is a schematic diagram of the metal composition of the protective layer in the LED chip with a vertical structure of the whole-surface reflector according to the present invention;
FIG. 4 is a schematic diagram of the composition of the reflective metal layer in the LED chip with a vertical structure of the whole-surface reflector according to the present invention;
fig. 5 is a flowchart of a method for manufacturing a vertical LED chip of a whole-surface reflector according to the present invention.
Description of reference numerals: 1. supporting a conductive substrate; 2. a bonding layer metal; 3. a protective layer metal; 4. a reflective metal layer; 5. an insulating layer; 6. an epitaxial layer; 7. an n electrode; 21. a first protrusion; 31. a first groove; 32. a second protrusion; 41. a second groove; 42. and a third protrusion.
Detailed Description
The invention will be described in detail with reference to the drawings and specific embodiments, which are illustrative of the invention and are not to be construed as limiting the invention.
As shown in fig. 1 to 5, an LED chip with a vertical structure of a whole-surface reflector includes an n-electrode 7, an epitaxial layer 6, an insulating layer 5, a reflective metal layer 4, a protective layer metal 3, a bonding layer metal 2, and a supporting conductive substrate 1; the bonding layer metal 2 is mounted on the supporting conductive substrate 1, a first protrusion 21 is arranged at the top of the bonding layer metal 2, the protective layer metal 3 comprises a first groove 31 and a second protrusion 32, the first groove 31 is matched with the first protrusion 21, the reflective metal layer 4 comprises a second groove 41 and a third protrusion 42, the second groove 41 is matched with the second protrusion 32, the insulating layer 5 is mounted on the outer side of the third protrusion 42, the epitaxial layer 6 is mounted on the insulating layer 5 and the reflective metal layer 4, and the n electrode 7 is mounted on the epitaxial layer 6.
Specifically, in this embodiment, the epitaxial layer 6 is a light-emitting GaN layer grown on a silicon-based or sapphire or SiC substrate.
Specifically, in the embodiment, the insulating layer 5 is SiO2, and the thickness of the insulating layer 5 is 100nm to 10000 nm; it should be noted that the insulating layer 5 may also be another insulating light-transmitting material that transmits light, and is not limited in this respect.
Specifically, in the scheme of this embodiment, the reflective metal layer 4 is a NiAg stack, and the thickness of the reflective metal layer 4 is 100nm to 1000 nm; it should be noted that the reflective metal layer 4 may also be other metals with higher reflectivity and good ohmic contact, and is not limited herein.
Specifically, in this embodiment, the protective layer metal 3 is a multi-metal stack of Ti, TiW, Pt, Ni, Cr, and Au, and the thickness of the protective layer metal 3 is 100nm to 5000 nm.
Specifically, in this embodiment, the bonding layer metal 2 is a stack of Ni and Sn or a eutectic alloy, and the bonding layer metal has a thickness of 100nm to 5000 nm; it should be noted that the bonding layer metal 2 may also be a stack or a eutectic alloy of Ag and Sn, a stack or a eutectic alloy of Au and Sn, or a stack or a eutectic alloy of Au, which is not specifically limited herein.
Specifically, in the embodiment, the supporting conductive substrate 1 is single crystal silicon or polycrystalline silicon with high conductivity, and the thickness of the supporting conductive substrate 1 is 50um to 400 um; the supporting conductive substrate 1 may also be single crystal germanium or polycrystalline germanium with high conductivity, or metal or alloy such as Cu, W, Al, etc., and is not limited in particular.
Specifically, in this embodiment, the n-electrode 7 is a stacked layer of one or more metals selected from Cr, Ti, Al, Ni, Au, and Pt, and the thickness of the n-electrode 7 is 0.5um to 10 um.
A method for preparing a vertical structure LED chip of a whole-surface reflector comprises the following steps:
step S1, growing an epitaxial layer on a substrate of silicon, sapphire, SiC or the like by using MOCVD to form an LED epitaxial wafer;
step S2, growing an insulating layer on the LED epitaxial wafer by PECVD or PVD or vapor deposition or spin coating;
step S3, spin-coating photoresist on the insulating layer, and performing a photolithography process to form a square or rectangular ring;
step S4, removing the unnecessary insulation layer by chemical corrosion or etching method;
step S5, covering a reflecting metal layer on the whole surface of the insulating layer and the epitaxial layer by using an electron beam evaporation or PVD mode;
step S6, annealing the reflective metal layer to form good ohmic contact and ensure high reflectivity;
step S7, after annealing, covering the whole surface with protective layer metal and bonding layer metal by using an electron beam evaporation or PVD method;
step S8, manufacturing bonding layer metal on the supporting conductive substrate by using an electron beam evaporation or PVD method;
and step S9, bonding the samples obtained in the step S7 and the step S8.
Step S10, removing the substrate by grinding, chemical etching or plasma etching or laser stripping;
step S11, roughening the epitaxial layer by chemical liquid reduction or acid solution or graphical etching method to facilitate light emergence;
step S12, using photoetching method to make a slightly larger square or rectangular pattern which is complementary to the pattern in step S3, and then using hot acid solution or inductively coupled plasma etching method to make the required pattern;
step S13, manufacturing a pattern of an n electrode on the pattern of the step S12 by using a photoetching method, covering the whole surface of the n electrode with n electrode metal by using an electron beam evaporation or PVD method, and stripping the n electrode by using an organic solution;
and step S14, after testing, obtaining a single LED chip by using a laser cutting and splitting mode or a blade cutting machine cutting mode.
Specifically, in the embodiment, in step S4, after the place where the insulating layer is not needed is removed, the photoresist is removed, and the subsequent operations such as photoresist removal for the reflector are not needed any more by removing the photoresist when the place where the insulating layer is not needed is removed, so that the related pollution is avoided, and the process stability and yield can be improved.
Example 1:
growing an LED epitaxial wafer of an epitaxial layer of 2um-8um on a Si substrate by using an MOCVD epitaxial technology;
respectively using acetone and isopropanol to carry out organic cleaning for 5min to remove organic dirt;
then using SPM solution to carry out acid cleaning to remove inorganic metal dirt and organic dirt;
flushing and spin-drying, and growing 400nm insulating SiO2 at 300 ℃ by using PECVD;
using positive photoresist photoetching technology to obtain inner 1000 um-1000 um square photoresist rings and outer 1030 um-1030 um square photoresist rings;
BOE corrodes SiO2 in the glue-free area until the area is clean;
removing the photoresist, soaking for 1-5 minutes by using dilute hydrochloric acid, and flushing for spin-drying;
performing electron beam evaporation on the whole surface of the NiAg alloy within Ni1nm, wherein Ag is 100nm-300 nm;
under the environment of Ag annealing N2, at the temperature of 300 ℃ and 600 ℃, for 10-600 seconds;
electron beam evaporation coating TiPtTiPt protective layer and NiSn bonding metal layer, wherein in the TiPtTiPt protective layer, Ti is 20nm-200nm, Pt is 20nm-300nm, in the NiSn bonding metal layer, Ni is 100nm-800nm, and Sn is 100nm-2000 nm;
evaporating a NiSn bonding metal layer on the high-conductivity Si substrate by adopting an electron beam evaporation process, wherein in the NiSn bonding metal layer, Ni is 100nm-800nm, and Sn is 100nm-2000 nm;
a sample of which a TiPtTiPt protective layer and a NiSn bonding metal layer are evaporated by an electron beam and a sample of which a NiSn bonding metal layer is evaporated on a high-conductivity Si substrate are bonded by a bonding machine, and a silicon substrate is removed by using grinding and chemical corrosion methods;
roughening the chip with the silicon substrate removed by using hot alkaline solution, wherein the KOH aqueous solution is adopted in the embodiment, the percentage concentration of the solution is 0.05-10%, and the temperature is 20-100 ℃;
manufacturing a square LED pattern (1005um to 1005um) covered by glue by using a photoetching method, and corroding an epitaxial layer region without the glue coverage by using phosphoric acid to form a cutting channel;
an n electrode pattern is manufactured by using a photoetching method, an electron beam is used for evaporating an n electrode, the electrode material is Ti/Al/Ti/Au, and the n electrode is soaked and stripped by using an organic solution. The total thickness of the electrode is 2500 nm-3000 nm;
and cutting the channel by using laser, splitting by using a splitter, and expanding the film to form a single LED chip, so that the LED chip with the vertical structure and reflecting the whole surface is manufactured.
In this embodiment, the vertical-structure LED chip with a whole surface reflection manufactured by the above method can effectively prevent metal ions from migrating to the side surface of the LED chip, thereby avoiding the occurrence of short-circuit leakage caused by the metal ions touching the PN junction on the side surface of the LED chip, and meanwhile, the reflective metal layer does not need to be retracted, so that the reflective area of the reflective metal layer is larger than that of the existing vertical-structure LED chip, thereby effectively improving the luminance of the LED chip, solving the problem of low reflectivity of the existing vertical-structure LED chip, and in addition, the subsequent operations such as photoresist removal by photolithography and the like for the reflector are not needed, thereby avoiding the related pollution, and improving the stability and yield of the manufacturing process.
The technical solutions provided by the embodiments of the present invention are described in detail above, and the principles and embodiments of the present invention are explained herein by using specific examples, and the descriptions of the embodiments are only used to help understanding the principles of the embodiments of the present invention; meanwhile, for a person skilled in the art, according to the embodiments of the present invention, there may be variations in the specific implementation manners and application ranges, and in summary, the content of the present description should not be construed as a limitation to the present invention.

Claims (10)

1. The LED chip with the vertical structure is characterized by comprising an n electrode (7), an epitaxial layer (6), an insulating layer (5), a reflecting metal layer (4), a protective layer metal (3), a bonding layer metal (2) and a supporting conductive substrate (1); the bonding layer metal (2) is arranged on the supporting conductive substrate (1), a first protrusion (21) is arranged at the top of the bonding layer metal (2), the protective layer metal (3) comprises a first groove (31) and a second protrusion (32), the first groove (31) is matched with the first protrusion (21), the reflective metal layer (4) comprises a second groove (41) and a third protrusion (42), the second groove (41) is matched with the second protrusion (32), the insulating layer (5) is arranged on the outer side of the third protrusion (42), the epitaxial layer (6) is arranged on the insulating layer (5) and the reflective metal layer (4), and the n electrode (7) is arranged on the epitaxial layer (6).
2. The vertical structure LED chip of the whole surface reflector according to claim 1, wherein: the epitaxial layer (6) is a luminous GaN layer grown on a silicon-based or sapphire or SiC substrate.
3. The vertical structure LED chip of the whole surface reflector according to claim 1, wherein: the insulating layer (5) is SiO2, and the thickness of the insulating layer (5) is 100nm-10000 nm.
4. The vertical structure LED chip of the whole surface reflector according to claim 1, wherein: the reflection metal layer (4) is a NiAg laminated layer, and the thickness of the reflection metal layer (4) is 100nm-1000 nm.
5. The vertical structure LED chip of the whole surface reflector according to claim 1, wherein: the protective layer metal (3) is a multi-metal laminated layer of Ti, TiW, Pt, Ni, Cr and Au, and the thickness of the protective layer metal (3) is 100nm-5000 nm.
6. The vertical structure LED chip of the whole surface reflector according to claim 1, wherein: the bonding layer metal (2) is a laminated layer or eutectic alloy of Ni and Sn, and the thickness of the bonding layer metal (2) is 100nm-5000 nm.
7. The vertical structure LED chip of the whole surface reflector according to claim 1, wherein: the supporting conductive substrate (1) is monocrystalline silicon or polycrystalline silicon, and the thickness of the supporting conductive substrate (1) is 50-400 um.
8. The vertical structure LED chip of the whole surface reflector according to claim 1, wherein: the n electrode (7) is a lamination of one or more metals of Cr, Ti, Al, Ni, Au and Pt, and the thickness of the n electrode (7) is 0.5-10 um.
9. The method for preparing the vertical structure LED chip of the whole surface reflector as claimed in any one of claims 1 to 8, comprising the following steps:
step S1, growing an epitaxial layer (6) on the silicon or sapphire or SiC substrate to form an LED epitaxial wafer;
step S2, growing an insulating layer (5) on the LED epitaxial wafer;
step S3, spin-coating photoresist on the insulating layer (5) and performing a photoetching process to form a square or rectangular ring shape;
step S4, removing the place where the insulating layer (5) is not needed;
step S5, covering the whole surface of the insulating layer (5) and the epitaxial layer (6) with a reflective metal layer (4);
step S6, annealing the reflective metal layer (4);
step S7, after annealing, covering the whole surface with a protective layer metal (3) and a bonding layer metal (2);
step S8, manufacturing a bonding layer metal (2) on a supporting conductive substrate (1);
step S9, bonding the samples obtained in step S7 and step S8;
step S10, removing the substrate;
step S11, carrying out rough treatment on the epitaxial layer (6);
step S12, creating a square or rectangular pattern corresponding to and complementary to step S3;
step S13, making a pattern of an n-electrode (7) on the pattern of the step S12, covering the whole surface with n-electrode metal, and stripping the n-electrode (7);
and step S14, obtaining a single LED chip.
10. The method for manufacturing the vertical structure LED chip of the whole surface reflector according to claim 9, wherein the method comprises the following steps: in step S4, the photoresist is removed after removing the portions where the insulating layer (5) is not required.
CN202010251193.3A 2020-04-01 2020-04-01 Vertical-structure LED chip of whole-surface reflector and preparation method thereof Withdrawn CN111312875A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010251193.3A CN111312875A (en) 2020-04-01 2020-04-01 Vertical-structure LED chip of whole-surface reflector and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010251193.3A CN111312875A (en) 2020-04-01 2020-04-01 Vertical-structure LED chip of whole-surface reflector and preparation method thereof

Publications (1)

Publication Number Publication Date
CN111312875A true CN111312875A (en) 2020-06-19

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Application publication date: 20200619