CN111312661A - Use stress-reducing sandwich structure that ceramic substrate is last to enclose frame - Google Patents
Use stress-reducing sandwich structure that ceramic substrate is last to enclose frame Download PDFInfo
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- CN111312661A CN111312661A CN202010244022.8A CN202010244022A CN111312661A CN 111312661 A CN111312661 A CN 111312661A CN 202010244022 A CN202010244022 A CN 202010244022A CN 111312661 A CN111312661 A CN 111312661A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 74
- 239000000758 substrate Substances 0.000 title claims abstract description 60
- 230000035882 stress Effects 0.000 claims abstract description 45
- 238000007789 sealing Methods 0.000 claims abstract description 30
- 238000003466 welding Methods 0.000 claims abstract description 26
- 230000008646 thermal stress Effects 0.000 claims abstract description 12
- 239000007769 metal material Substances 0.000 claims abstract description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 13
- 238000010521 absorption reaction Methods 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 230000009467 reduction Effects 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 abstract description 8
- 238000010008 shearing Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 49
- 238000000034 method Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 10
- 230000035939 shock Effects 0.000 description 8
- 239000000956 alloy Substances 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 5
- 229910000833 kovar Inorganic materials 0.000 description 5
- 229910000990 Ni alloy Inorganic materials 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 description 1
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K5/00—Casings, cabinets or drawers for electric apparatus
- H05K5/02—Details
- H05K5/0217—Mechanical details of casings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K5/00—Casings, cabinets or drawers for electric apparatus
- H05K5/06—Hermetically-sealed casings
- H05K5/066—Hermetically-sealed casings sealed by fusion of the joining parts without bringing material; sealed by brazing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a stress-reducing sandwich structure enclosure frame applied to a ceramic substrate in the field of ceramic substrate sealing, wherein a cover plate is fused above the enclosure frame, the enclosure frame comprises a welding layer and a sealing layer which are arranged up and down and are used for being matched with the thermal stress of the ceramic substrate, a stress absorbing layer is arranged between the welding layer and the sealing layer, the welding layer, the sealing layer and the stress absorbing layer are connected through welding, and a metal material with the shearing modulus of 30-50 Gpa is adopted as a stress absorbing layer 7. The invention can greatly reduce the impact of heat of the ceramic integrated shell on the ceramic substrate during parallel seam welding, improve the reliability of the ceramic integrated packaging shell and meet the high-reliability application requirement of the satellite-borne TR component.
Description
Technical Field
The invention relates to the field of ceramic substrate sealing, in particular to a stress-reducing sandwich-structure enclosure frame applied to a ceramic substrate.
Background
The typical multilayer ceramic integrated packaging structure is composed of a ceramic substrate 1, a kovar frame 4, a cover plate 2 and a metal bottom plate 3, and the structure is shown in fig. 1. The LTCC substrate of the ceramic substrate plays important roles of mechanical support, chip protection, signal transmission, channel heat dissipation and the like in a circuit system; the enclosing frame plays a role in packaging the whole assembly in the packaging module, provides a Z-axis space essential for assembling and welding components for the whole packaging module, and realizes three-dimensional assembly of the LTCC substrate; the bottom plate plays a role in supporting and radiating in the packaging module, can effectively transmit heat on the LTCC circuit board to the system board, and can effectively reduce thermal stress mismatch between the module and the system board; the cover plate is used for assembling elements of the shell and sealing the chip.
As shown in fig. 2, the sealing process of the multilayer ceramic integrated package casing is a parallel seam welding process, in which a large amount of heat is instantaneously generated by the contact resistance between the cover plate 2 and the enclosure frame 4, and the contact surface between the cover plate 2 and the enclosure frame 4 is melted to form a molten seam welding. The instantaneous heat at the point T can reach 1000 ℃, the heat is transferred to the multilayer ceramic substrate 1 through the enclosing frame 4, the enclosing frame 4 and the ceramic substrate 1 shrink in the cooling process, but the contraction of the enclosing frame 4 is larger than that of the multilayer ceramic substrate 1 due to the difference of thermal expansion coefficients, so that the ceramic substrate 1 is pulled apart. In fig. 2, F1 indicates the force receiving direction when the enclosure frame 4 is solidified, and F2 indicates the tensile stress direction of the ceramic substrate 1.
In order to reduce the thermal shock to the ceramic substrate in the sealing process of the ceramic package shell, the following methods are adopted: the method has the advantages of improving the structural design of the enclosure frame, reducing the parallel seam welding power, improving the ceramic strength and the like, wherein the application scene of the capping process is limited by reducing the parallel seam welding power, and the method can only be applied to a specific packaging structure (such as higher height of the enclosure frame, lower heat transfer to a ceramic shell and lower stress concentration). The requirement on the performance of the ceramic material is high when the strength of the ceramic is improved, the formula design of basic raw materials needs to be improved, and the difficulty is high. Therefore, under the size limitation of the package housing, stress buffering is often achieved by improving the structural design of the enclosure frame. The existing enclosure frame structure is a single structure, for example, the enclosure frame structure is processed by single iron-cobalt-nickel materials such as kovar and 4J49, and a stress-free buffer layer is formed, under a special application scene, for example, when the power of parallel seam welding is high and the thermal strain is large, a ceramic integrated housing of the enclosure frame adopting the single structure and the materials generates a large amount of heat during the parallel seam welding, the heat is quickly transmitted to a ceramic substrate through the enclosure frame in structures with low enclosure frame heights (less than 2mm), the ceramic substrate is often cracked by thermal shock, so that the sealing leakage rate is more than or equal to 1 × 10-2Pa · cm3/s, and the housing sealing failure occurs.
Disclosure of Invention
The present invention is directed to a frame with a stress-reducing sandwich structure applied on a ceramic substrate, so as to solve the problems mentioned in the background art.
In order to achieve the purpose, the invention provides the following technical scheme:
the utility model provides an use the reduced stress sandwich structure on ceramic substrate and enclose frame, the top melting has the apron, enclose the frame including arrange from top to bottom and all be used for with ceramic substrate thermal stress matching's welded layer and seal the layer, be equipped with the stress absorbing layer between welded layer and the seal layer, and pass through welded connection between welded layer, seal layer and the stress absorbing layer, the stress absorbing layer adopts the metal material of shear modulus between 30~50 Gpa.
In order to reduce the thermal stress deformation of the ceramic substrate when the cover plate and the surrounding frame are melted, the stress absorbing layer is made of an oxygen-free copper material.
As a modification of the invention, the coefficient of thermal expansion of the solder layer differs from the coefficient of thermal expansion of the ceramic substrate by + -5 ppm/deg.C for better stress matching with the ceramic substrate.
As a modification of the invention, in order to better match the stress of the ceramic substrate, the sealing layer is made of the same material as the cover plate or a material with a thermal expansion coefficient different from that of the ceramic substrate by +/-5 ppm/DEG C.
As an improvement scheme of the invention, in order to enhance the surface performance of the enclosure frame, after the welding layer, the stress absorption layer and the sealing layer are welded and fixed, the surface of the enclosure frame is plated with nickel and gold.
As a modified scheme of the invention, in order to enhance the surface performance of the enclosure frame, the thickness of the nickel layer is 2.54-11.4 μm; the thickness of the gold layer is 0.75-2.54 μm.
The utility model provides a pottery integration shell, includes metal substrate, fixes the ceramic substrate on metal substrate to and link firmly the frame that encloses on ceramic substrate, enclose the frame and adopt the stress reducing sandwich structure among the above-mentioned technical scheme to enclose the frame, still include the apron, enclose the frame and lap parallel seam welding.
Has the advantages that: compared with the enclosure with a single structure in the prior art, the enclosure with the sandwich structure has the advantages that the stress attenuation coefficients of the two enclosure structures from the cover plate to the top of the ceramic substrate are compared in a simulation mode in the covering process, the stress attenuation coefficient of the enclosure with the single structure and the material is about 37%, and the stress attenuation coefficient of the enclosure with the sandwich structure from the cover plate to the top of the ceramic substrate is about 79%, so that the enclosure with the sandwich structure effectively reduces the thermal stress deformation of the ceramic substrate, is particularly suitable for the enclosure with the lower height (less than 2mm), and meets the high-reliability application requirement of a satellite-borne TR component, wherein the air tightness (leak rate) of a ceramic shell seal of a ceramic integrated shell adopting the enclosure with the sandwich structure is less than or equal to 1 × 10-3 Pa-cm 3/s after parallel seam welding. In addition, different materials are adopted for different functional layers, when the height of the enclosing frame is lower (smaller than 2mm), heat is transferred to the stress absorption layer through the sealing layer, and thermal stress is converted into thermal strain on the stress absorption layer, so that thermal shock is effectively absorbed, and thermal shock to the ceramic substrate is reduced.
Drawings
FIG. 1 is a schematic diagram of a prior art ceramic integrated package structure;
FIG. 2 is a force analysis diagram of the enclosure frame during seam welding of the cover plate and the enclosure frame in the prior art;
FIG. 3 is a schematic view of the internal structure of the enclosure of the present invention;
fig. 4 is a front view and a top view of the enclosure of the present invention.
FIG. 5 is a graph illustrating stress analysis of a ceramic substrate during sealing of a prior art single structure enclosure;
FIG. 6 is a graph illustrating stress analysis of the ceramic substrate during sealing of the enclosure of the present invention;
FIG. 7 is a graph illustrating stress analysis of a cover plate during sealing of a prior art single structure enclosure;
fig. 8 is a graph showing stress analysis of the cover plate when the enclosure frame of the present invention is sealed.
In the figure: 1-a ceramic substrate; 2-cover plate; 3-a bottom plate; 4-enclosing a frame; 5-sealing the electrode; 6-welding layer; 7-a stress absorbing layer; 8-sealing layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The thermal expansion coefficients of the commonly used ceramic material and the iron-cobalt-nickel alloy material are shown in the following table.
Since the ceramic substrate 1 has a thermal expansion coefficient of about 4-10 ppm/deg.C, the solder layer 6 is preferably made of an iron-cobalt-nickel alloy material such as the trade name: 4J29, 4J42, 4J45, 4J50 and the like, wherein the iron-cobalt-nickel alloy material has a thermal expansion coefficient close to that of the ceramic substrate 1, and when the difference of the thermal expansion coefficients is +/-5 ppm/DEG C, the iron-cobalt-nickel alloy material can better match with the ceramic material in stress, so that the thermal stress applied to the ceramic substrate 1 is reduced.
The stress absorption layer 7 is made of a metal material with a shear modulus of 30-50 Gpa, preferably oxygen-free copper (G-108 GPa), and in the process of sealing and releasing heat of the sealing electrode 5, the oxygen-free copper can deform more easily due to stress concentration caused by heat, the rigid deformation trend of the whole packaging structure is weakened, and therefore thermal stress deformation of the ceramic substrate 1 is reduced. Refer specifically to the stress analysis comparison of fig. 5 and 6 and fig. 7 and 8. In addition, since oxygen-free copper has high thermal conductivity (thermal conductivity 400 w/m.C), it can absorb a large amount of heat of the cover plate 2 during parallel seam welding of the ceramic case, thereby reducing thermal shock to the ceramic substrate 1.
The sealing layer 8 is usually made of the same material as the cover plate 2, or made of a material having a thermal expansion coefficient within ± 5 ppm/degree centigrade from that of the ceramic substrate 1, such as kovar alloys 4J29, 4J45, 4J50, etc., for matching with ceramic materials.
The ceramic integrated shell adopting the sandwich enclosure frame has the advantages that the thermal stress deformation of the ceramic substrate is greatly reduced, so that when the enclosure frame is low in height (less than 2mm), the air tightness (leakage rate) of the ceramic shell seal after parallel seam welding of the ceramic integrated shell is less than or equal to 1 x 10-3 Pa-cm 3/s, and the high-reliability application requirement of the satellite-borne TR component can be met.
Further, the solder layer 6 and the stress absorbing layer 7, and the stress absorbing layer 7 and the sealing layer 8 are soldered to each other by silver copper (Ag28Cu 72).
Furthermore, after the welding layer 6, the stress absorbing layer 7 and the sealing layer 8 are welded and fixed, the surface of the enclosure frame 4 is plated with nickel and gold. The plating mode is electroplating or chemical plating, the plating sequence is nickel plating and gold plating, wherein the thickness of the nickel layer is 2.54-11.4 μm; the thickness of the gold layer is 0.75-2.54 μm. The service life of the enclosure frame 4 is prolonged by means of nickel plating and gold plating.
Therefore, in this embodiment, after the ceramic integrated package enclosure (HTCC/LTCC) adopts the frame with the stress-reducing sandwich structure, the thermal shock to the ceramic substrate 1 during sealing is greatly reduced, so that the enclosure sealing airtightness (leakage rate) is less than or equal to 1 × 10-3Pa·cm3And s. And the experiment proves that the shell passes through the temperatureAfter temperature cycle (-55-150 deg.C, holding for 30min, conversion time 30s, 100 times) and thermal shock (-55-125 deg.C, 15 times), the leakage rate is still less than or equal to 1 x 10-3Pa·cm3/s。
Example 2, when the enclosure frame 4 is applied to an integrated package of LTCC ceramics, the coefficient of thermal expansion of the ceramic substrate 1(951) is 5.8 ppm/degree centigrade, and the structure of the enclosure frame 4 is the solder layer 6+ the stress absorbing layer 7+ the sealing layer 8.
Since the welding layer 6 is directly welded with the LTCC substrate, the stress of the ceramic substrate 1 is directly caused by the thermal stress mismatch with the metal of the welding layer 6, and therefore, according to the thermal expansion coefficient of the fe-co-ni metal material in the above table, kovar alloy 4J29 similar to LTCC ceramic is selected.
The stress absorption layer 7 is made of an oxygen-free copper material, the sealing layer 8 is made of kovar alloy 4J29, and the enclosing frame 4 with the structure can greatly reduce thermal shock of the ceramic substrate 1 during sealing.
Although the present description is described in terms of embodiments, not every embodiment includes only a single embodiment, and such description is for clarity only, and those skilled in the art should be able to integrate the description as a whole, and the embodiments can be appropriately combined to form other embodiments as will be understood by those skilled in the art.
In the description of the present invention, it is to be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
In the description of the present invention, it should be further noted that the terms "upper", "lower", "inside", "outside", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or orientations or positional relationships conventionally put in use of products of the present invention, which are merely for convenience of description and simplification of description, but do not indicate or imply that the referred devices or elements must have specific orientations, be constructed in specific orientations, and be operated, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed" and "connected" are to be interpreted broadly, e.g., as being either fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Therefore, the above description is only a preferred embodiment of the present application, and is not intended to limit the scope of the present application; all changes which come within the meaning and range of equivalency of the claims are to be embraced within their scope.
Claims (6)
1. The utility model provides an use and enclose frame at ceramic substrate's stress reduction sandwich structure, the top melting has apron (2), its characterized in that, enclose frame (4) including arrange from top to bottom and all be used for with ceramic substrate (1) thermal stress matching's welded layer (6) and seal layer (8), welded layer (6) and seal and be equipped with the stress absorption layer between layer (8), and welded layer (6), seal and pass through welded connection between layer (8) and the stress absorption layer (7), stress absorption layer (7) adopt the metal material of shear modulus between 30~50 Gpa.
2. The frame of claim 1, wherein the stress absorbing layer (7) is made of oxygen-free copper material.
3. A stress-reducing sandwich frame for ceramic substrates according to claim 1 or 2, wherein the thermal expansion coefficient of the solder layer (6) is within ± 5ppm/° c of the thermal expansion coefficient of the ceramic substrate (1).
4. A stress-reducing sandwich frame for ceramic substrates according to claim 1 or 2, wherein the sealing layer (8) is made of the same material as the cover sheet (2) or a material having a thermal expansion coefficient different from that of the ceramic substrate (1) by ± 5ppm/° C.
5. The enclosing frame with stress-reducing sandwich structure applied on the ceramic substrate as claimed in claim 1 or 2, wherein after the welding layer (6), the stress absorbing layer (7) and the sealing layer (8) are welded and fixed, the surface of the enclosing frame (4) is plated with nickel and gold.
6. The frame of claim 5, wherein the nickel layer is 2.54 μm to 11.4 μm thick; the gold layer is 0.75 μm to 2.54 μm thick.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010244022.8A CN111312661A (en) | 2020-03-31 | 2020-03-31 | Use stress-reducing sandwich structure that ceramic substrate is last to enclose frame |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010244022.8A CN111312661A (en) | 2020-03-31 | 2020-03-31 | Use stress-reducing sandwich structure that ceramic substrate is last to enclose frame |
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| CN111312661A true CN111312661A (en) | 2020-06-19 |
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| CN202010244022.8A Pending CN111312661A (en) | 2020-03-31 | 2020-03-31 | Use stress-reducing sandwich structure that ceramic substrate is last to enclose frame |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6231144A (en) * | 1985-08-02 | 1987-02-10 | Fujitsu Ltd | Semiconductor device |
| CN102350554A (en) * | 2011-09-13 | 2012-02-15 | 中国电子科技集团公司第四十三研究所 | Seal brazing method for ceramic and kovar alloy |
| CN104668811A (en) * | 2013-11-29 | 2015-06-03 | 日立金属株式会社 | Substrate with a brazing material and method for producing substrate with a brazing material |
| CN211529930U (en) * | 2020-03-31 | 2020-09-18 | 中国电子科技集团公司第四十三研究所 | Use stress-reducing sandwich structure that ceramic substrate is last to enclose frame |
-
2020
- 2020-03-31 CN CN202010244022.8A patent/CN111312661A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6231144A (en) * | 1985-08-02 | 1987-02-10 | Fujitsu Ltd | Semiconductor device |
| CN102350554A (en) * | 2011-09-13 | 2012-02-15 | 中国电子科技集团公司第四十三研究所 | Seal brazing method for ceramic and kovar alloy |
| CN104668811A (en) * | 2013-11-29 | 2015-06-03 | 日立金属株式会社 | Substrate with a brazing material and method for producing substrate with a brazing material |
| CN211529930U (en) * | 2020-03-31 | 2020-09-18 | 中国电子科技集团公司第四十三研究所 | Use stress-reducing sandwich structure that ceramic substrate is last to enclose frame |
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