CN111312603A - Solid-state bonding method based on copper-nickel second-stage sea cucumber-like micro-nano layer - Google Patents
Solid-state bonding method based on copper-nickel second-stage sea cucumber-like micro-nano layer Download PDFInfo
- Publication number
- CN111312603A CN111312603A CN202010110434.2A CN202010110434A CN111312603A CN 111312603 A CN111312603 A CN 111312603A CN 202010110434 A CN202010110434 A CN 202010110434A CN 111312603 A CN111312603 A CN 111312603A
- Authority
- CN
- China
- Prior art keywords
- nickel
- copper
- bonding
- micro
- nano
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/034—Manufacturing methods by blanket deposition of the material of the bonding area
- H01L2224/0346—Plating
- H01L2224/03462—Electroplating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/0501—Shape
- H01L2224/05016—Shape in side view
- H01L2224/05017—Shape in side view comprising protrusions or indentations
Abstract
The invention provides a solid-state bonding method based on a copper-nickel secondary sea cucumber-like micro-nano layer. The surfaces of two substrates with sea cucumber-shaped copper-nickel micro-nano layers are mutually contacted to form a contact area, and then pressure is applied to the contact area under the heating condition to carry out bonding, wherein the sea cucumber-shaped copper-nickel micro-nano layers comprise copper needle layers and nickel needle layers plated on the surfaces of the copper needle layers, the copper needle layers are array layers formed by conical copper micro-needles, and the nickel needle layers comprise array layers formed by conical nickel nano needles and bulges formed on the conical nickel nano needles. The invention can generate high-strength interconnection acting force, does not need harsh process conditions, can be carried out at lower temperature and pressure and in an air environment, does not need a reflow soldering process, simplifies the process flow, saves the energy consumption, and conforms to the development trend of green packaging.
Description
Technical Field
The invention relates to the field of chip packaging, in particular to a solid-state bonding method based on a copper-nickel secondary sea cucumber-like micro-nano layer.
Background
Three-dimensional high-density packaging is the development direction of chip packaging technology, and the trend puts higher requirements on micro-interconnection technology. The traditional peripheral wiring technology greatly limits the number of laminated layers and the size of the three-dimensional package, and as the number of laminated layers of the three-dimensional package increases, the thickness of a chip becomes thinner and the distance between chips becomes smaller, which puts higher requirements on interconnection temperature and pressure. At present, the lead bonding technology generally applied to laminated three-dimensional packaging is simple in process and low in cost, but the density of leads is increased, the length is increased, signal congestion and delay are aggravated along with the increase of the number of stacked layers, and in addition, the traditional fusion welding process has the temperature as high as 400 ℃, and the reliability of a chip and a substrate is seriously influenced by thermal stress generated by high temperature. Changing such an interconnection mode, it is necessary to explore a solid state bonding technology, which reduces the thermal stress deformation of the chip at a lower packaging temperature, improves the production efficiency, optimizes the cost, and reduces the energy consumption, so as to meet the development trend of green electronic packaging.
The current solid state bonding technology comprises a direct interconnection technology, a surface activation interconnection technology, a binder interconnection technology, a eutectic interconnection technology, a micro-nano rod metal interconnection technology and the like. The direct interconnection technology combines Van der Waals force between flat and clean surfaces, and forms covalent bonds at the interface at the high temperature of 700-1000 ℃ to improve the interconnection strength, so that the temperature requirement is high, and an ultra-vacuum environment is required, and the direct interconnection technology of Cu-Cu requires that the surface has high hydrophilicity and cleanness and must be obtained by chemical mechanical polishing. The surface activation interconnection technology is characterized in that low-energy Ar electron beams are used for bombarding the surface of a substrate, so that the surface of the substrate is activated and cleaned, the interconnection interface defects are very few, the interconnection precision is high, dissimilar metals or the same metals can be combined in a solid state, but the interconnection is usually carried out under the vacuum condition, although the interconnection can be carried out at room temperature or low temperature, the reaction conditions are complicated, the requirement on the equipment precision is very high, and the large-scale industrial production is difficult to realize. The adhesive interconnection technology uses a high molecular photoetching material SU-8 as a medium, the material has low glass transition temperature, high viscosity and small residual stress after interconnection, the technology can be implemented under the specific condition without an electric field, but the interconnection in the traditional welding spot interconnection area needs to be further proved. The eutectic interconnection technology is to heat metal to a eutectic point to realize interconnection, common interconnection couple Au-Si is diffused at an interface to form a eutectic compound, the eutectic interconnection technology is widely applied to MEMS packaging and IC interconnection, although complex conditions such as ultrahigh vacuum, thermal treatment after interconnection and the like are not needed, in order to prevent interface oxidation and pollution, the eutectic interconnection is usually carried out under vacuum conditions and in inert protective gas, and the reliability of typical bonding couple Au-Si eutectic interconnection is further limited by the difficulty in completely removing a silicon wafer oxidation layer and the poor wettability of the surface of a gold film. The micro-nano rod metal interconnection technology is that substrates with nanorod arrays on the surfaces are placed together, and in the low-temperature tempering process, the nanorod arrays are subjected to a sintering-like curing process to form a stable bonding layer, but the requirement on equipment is high. The prior art either requires harsh process conditions or has high requirements on equipment precision, but the solid-state bonding technology of the invention does not need harsh process conditions and has low requirements on equipment precision.
Disclosure of Invention
In order to overcome the defects and shortcomings in the prior art, the invention aims to provide a solid-state bonding method based on a copper-nickel secondary sea cucumber-like micro-nano layer, so that the interconnection between chips is realized at a lower temperature and pressure, the whole bonding process can be completed in the air, the process is simple, the energy consumption is low, and the development trend of green electronic packaging is met.
In order to achieve the purpose, the invention adopts the technical scheme that: a solid-state bonding method based on a copper-nickel secondary sea cucumber-like micro-nano layer comprises the following steps: the surfaces of the two substrates with the sea cucumber-shaped copper-nickel micro-nano layer are mutually contacted to form a contact area, and then the contact area is applied with pressure under the heating condition to carry out bonding; the sea cucumber-shaped copper-nickel micro-nano layer comprises a copper needle layer and a nickel needle layer plated on the surface of the copper needle layer, the copper needle layer is an array layer formed by conical copper micro-needles, and the nickel needle layer comprises an array layer formed by conical nickel nano-needles and protrusions formed on the conical nickel nano-needles. The copper needle layer is easy to oxidize, the nickel needle layer plated on the surface of the copper needle layer can be effectively prevented from being oxidized, the sea cucumber-shaped copper-nickel micro-nano layer has a huge surface area, when the substrates are interconnected, needle-shaped structure interlocking can generate a very large mechanical interlocking force, meanwhile, the hardness of the copper needle layer is small because the hardness of the nickel needle layer is large, the nickel needle layer can be well inserted into the softer copper needle layer by utilizing a harder pointed top structure to generate a huge material diffusion interface, and the interconnection quality is favorably increased. In addition, the solid-state bonding method can realize the interconnection of the substrate (such as a chip) at lower temperature and lower pressure, for example, the temperature can not exceed 250 ℃, and is far lower than the temperature of the traditional reflow soldering process, thereby not only ensuring the reliability of electronic components and reducing the thermal shock to the device, but also reducing the formation of intermetallic compounds and avoiding the formation of holes at the interface; compared with the traditional lead bonding technology, the solid bonding method does not need a reflow soldering process, simplifies the process flow, saves the energy consumption and conforms to the development trend of green packaging; the solid bonding method does not need harsh process conditions, the whole bonding process can be finished in the air, the protection of a vacuum environment or inert gas is not needed, and the requirement on the precision of equipment is not high.
As a preferred embodiment of the solid bonding method of the present invention, the bonding temperature is 210-250 ℃, the bonding pressure is 170-210MPa, and the bonding time is 20min or more.
As a preferred embodiment of the solid bonding method of the present invention, the bonding temperature is 240 ℃, the bonding pressure is 180MPa, and the bonding time is 20-25 min.
In a preferred embodiment of the solid-state bonding method of the present invention, the bonding is performed in air.
As a preferred embodiment of the solid-state bonding method of the present invention, the contact region is subjected to a preheating treatment prior to the application of the pressure, and the preheating temperature is the same as the bonding temperature.
As a preferred embodiment of the solid bonding method of the present invention, the height of the tapered copper micrometer needle is 1 to 3 μm, and the root diameter is 1 to 2 μm; the height of the conical nickel nano needle is 500nm, and the diameter of the needle root is 400 nm; the height of the protrusions is 50-80 nm.
As a preferred embodiment of the solid-state bonding method of the present invention, the contact region is further subjected to a heat treatment after the bonding.
As a preferred embodiment of the solid bonding method of the present invention, the temperature of the heat treatment is 190-200 ℃, and the time of the heat treatment is 10-100 h.
As a preferred embodiment of the solid-state bonding method of the present invention, the sea cucumber-like copper-nickel micro-nano layer is formed by an electrodeposition method.
As a preferred embodiment of the solid-state bonding method of the present invention, a crystallization modifier is used in the preparation of the sea cucumber-like copper-nickel micro-nano layer. The structural size of the sea cucumber-shaped copper-nickel micro-nano layer is controllable, and the micro-nano layers with different sizes can be obtained by changing the content and the type of the crystallization modifier during preparation.
Compared with the prior art, the invention has the following advantages and beneficial effects:
(1) the solid-state bonding method based on the copper-nickel secondary sea cucumber-like micro-nano layer can realize high-strength interconnection among chips and can be carried out at lower temperature and pressure;
(2) the solid-state bonding method based on the copper-nickel second-stage sea cucumber-like micro-nano layer does not need a reflow soldering process, simplifies the process flow, saves the energy consumption, and accords with the development trend of green packaging;
(3) the solid-state bonding method based on the copper-nickel secondary sea cucumber-like micro-nano layer does not need harsh technological conditions, the whole bonding process can be completed in the air, and the requirement on equipment precision is not high.
Drawings
FIG. 1 is an SEM (scanning electron microscope) image of the structure of a copper needle layer or a copper nickel layer, wherein (a, b) shows the copper needle layer without a nickel needle layer plated on the surface, and (c, d) shows the copper nickel layer;
FIG. 2 is a schematic diagram of two copper-based micro-nano sample interfaces, wherein (a) is a copper-based micro-needle, and (b) is a nickel nano-needle layer plated on the basis of the copper-based micro-needle;
FIG. 3 is a thermal bonding experimental setup;
FIG. 4 is an SEM image of a copper-nickel bonding interface, wherein (a, b) bonding conditions are 210 ℃, 180MPa and 20min, and (c, d) bonding conditions are 230 ℃, 180MPa and 20 min;
FIG. 5 is a TEM (transmission electron microscope) image of the copper-nickel bonding interface, wherein (a) is an image of a nickel needle filled copper needle layer and (b) is a copper-nickel high resolution contact image;
FIG. 6 is a graph showing the variation of shear strength with bonding temperature under different bonding pressures;
FIG. 7 is a graph of interconnect interfacial shear strength versus heat treatment aging.
Detailed Description
To better illustrate the objects, aspects and advantages of the present invention, the present invention will be further described with reference to specific examples.
(1) Preparation of copper-nickel second-level sea cucumber-like micro-nano layer
The inventor prepares a copper-nickel secondary micro-nano layer on a copper substrate by adopting an electrodeposition technology and uses the copper-nickel secondary micro-nano layer for follow-up research. The copper-nickel secondary micro-nano layer has a secondary structure and is a first-level copper needle layer and a second-level nickel needle layer respectively, wherein the nickel needle layer is plated on the surface of the copper needle layer; FIG. 1(a, b) is a scanning electron microscope image of different magnifications of a copper needle layer, which can determine that the copper needle layer has an array structure formed by tapered copper micro-needles, wherein the height of the tapered copper micro-needles is 1-3 μm, and the diameter of the needle root is 1-2 μm; fig. 1(c, d) is a scanning electron microscope image of different magnifications of the copper-nickel secondary micro-nano layer, and it can be determined that (1) the nickel needle layer is in a nano structure, including an array layer formed by conical nickel nanoneedles and protrusions formed on the conical nickel nanoneedles, wherein the height of the conical nickel nanoneedles is 500nm, the diameter of needle roots is 400nm, and the height of the protrusions is 50-80nm, and (2) the nickel needle layer is uniformly distributed and perpendicular to the conical surface of the copper needle layer, and is similar to a sea cucumber in shape, and the novel structure has an ultra-large surface area, and is a typical hydrophobic micro-nano structure. Fig. 2 is a schematic diagram of the formation process of the copper-nickel secondary sea cucumber-like micro-nano layer.
In addition, the structure size of the copper-nickel secondary sea cucumber-like micro-nano layer is controllable, and the micro-nano layers with different sizes can be obtained by changing the content and the type of the crystallization modifier during preparation.
(2) Bonding process
The inventors carried out the bonding operation using a bonding tester (Rhesca corporation, model PTR-1101) with a hot plate, specifically: placing one copper substrate with the sea cucumber-shaped copper-nickel micro-nano layer on a heating plate, placing the other copper substrate with the sea cucumber-shaped copper-nickel micro-nano layer on the heating plate so that the sea cucumber-shaped copper-nickel micro-nano layers of the two copper substrates are in face-to-face contact, starting to load vertical pressure for bonding after preheating for 30min, setting the loading speed of a loading machine for loading pressure to be 2.0mm/min, setting the bonding pressure to be 170-210MPa, and setting the preheating temperature and the bonding temperature to be the same, wherein a specific bonding experimental device is shown in figure 3. The whole bonding process is completed in air without the protection of vacuum environment or inert gas. After cooling, the bonding was measured in a ball test mode.
(3) Texture of bonding interface
The tissue morphology diagrams of the copper-nickel bonding interface under different bonding conditions are shown in fig. 4, and it is found that some hole defects exist along the bonding interface when the protruding nickel nano-needle is partially inserted into the softer copper needle layer after bonding, and when the bonding temperature is 210 ℃, the bonding pressure is 180MPa, and the bonding time is 20 min; when the bonding temperature is increased to 230 ℃, the whole nickel nanoneedle layer is completely inserted into the copper needle layer, and no holes are formed on the bonding interface, and it is expected that when the bonding temperature is increased to 240 ℃, a good bonding interface can be obtained because, on the one hand, sufficient mechanical interlocking can be obtained by the needle-shaped protrusions at the higher bonding temperature, and on the other hand, the nickel needle layer can be inserted into the copper needle layer tissue more easily depending on the sharp protrusion structure of the nickel needle layer at the high bonding temperature.
(4) Bonding mechanism
FIG. 5 is a TEM image of a bonding interface at a bonding temperature of 240 ℃, a bonding pressure of 180MPa, and a bonding time of 20min, wherein FIG. 5(a) is a low-magnification image of a nickel nanoneedle inserted into a copper needle layer, and it is observed that the bonding interface is very compact and almost has no gap, and electron diffraction patterns of selected regions on both sides of a connecting line respectively correspond to [ -112 ] of the nickel region and [ 111 ] of the copper region; fig. 5(b) is a high resolution image of both sides of the valley k, with a nickel plane lattice constant of 0.258nm, a copper plane lattice constant of 0.203nm, and a few nm-scale amorphous region in the middle of fig. 5(b) indicating the presence of atomic bonds, so that during low temperature solid state bonding, the hard nickel needle layer is easily inserted into the copper needle layer, forming a physical interlock of the nickel layer with the copper layer.
(5) Effect of thermal bonding conditions on shear Strength
Parameters that affect the quality of the low temperature interconnect bond include bonding pressure, bonding temperature, bonding time, and the like. And setting the bonding time for 20min in the research process to provide enough time and conditions for mutual insertion and deformation of the micro-nano materials.
Fig. 6 depicts a shear strength trend graph (bonding time is 20min) of the copper-nickel micro-nano interconnection interface under different conditions, and it is found that the average shear force is also improved along with the improvement of the bonding pressure, which is attributed to that metal copper and nickel deforms under the hot-pressing condition to increase the bonding area on one hand, and is attributed to that micro-nano copper-nickel needles on the surface of the sample deform under the pressure action to be mutually nested to realize mechanical interlocking on the other hand. When the hot pressing pressure is lower than 2500gf, the shearing force of the welding spot is lower, and the influence of the temperature rise on the shearing force of the welding spot is relatively weak; when the hot pressing pressure reached 5500gf, the effect of the rise in temperature on the shearing force was significant; when the hot pressing pressure is higher than 10000gf, the shearing force can reach more than 1000gf even at 210 ℃, the influence of the temperature increase on the shearing force is more obvious, the shearing force reaches 2000gf at the hot pressing temperature of 250 ℃, the shearing strength is 47MPa through the calculation of a shearing strength formula, and the shearing effect is comparable to the reflow soldering process. It can be seen that to achieve a relatively ideal bond strength, it is necessary to match two factors, pressure and temperature, of which pressure is the dominant factor, and in this experiment the hot-pressing pressure is not lower than 5500gf, while the temperature is preferably 240 ℃ because of the very large increase in the shear force of the solder joint when rising from 230 ℃ to 240 ℃ compared to the effect on the shear force when rising from 240 ℃ to 250 ℃.
The present invention has been made in an effort to explore interconnection techniques at low temperatures, which are biased toward achieving satisfactory bonding strength at lower temperatures, and therefore, the most used thermal bonding temperature pressure parameter is 240 ℃, 10000gf (i.e., 180MPa), under which the shear strength of the solder joint is 43 MPa. Obviously, compared with the traditional reflow soldering process with the temperature as high as 400 ℃, the solid-state bonding technology based on the copper-nickel secondary micro-nano morphology has the advantages that the temperature is low, the adverse effect caused by chip overheating in high-density laminated packaging is greatly reduced, the bonding contact area is greatly increased by the sea cucumber-shaped copper-nickel micro-nano layer, the bonding quality is improved, the bonding strength is comparable to that of reflow soldering, the reflow soldering is hopefully replaced, and the method becomes a new interconnection method in high-density three-dimensional packaging.
(6) Effect of Heat treatment on shear Strength
The inventor also carries out heat treatment on the sample after bonding treatment, selects interfaces prepared under different thermal pressure parameters in order to research the influence of heat treatment aging on the shear strength of the copper-nickel micro-nano interconnection interface, carries out heat treatment for 10-100 hours at 190 ℃, carries out a shear force test on the interconnection interface after the heat treatment is finished, and shows the influence of heat treatment aging on the shear strength as shown in figure 7 (the bonding time is 20 min).
From fig. 7, it can be found that: the shear strength rises very significantly after the heat treatment in the spot having a lower shear strength before the heat treatment, while the shear strength increases slowly though somewhat after the heat treatment in the spot having a higher shear strength before the heat treatment. Therefore, it can be presumed that the micro-nano copper-nickel interface with low shear strength is incompletely embedded, and the strength is improved to a certain extent due to the solid solution strengthening effect generated by the solid solution generated by atomic diffusion after heat treatment. And the interface with higher shearing strength is fully embedded, so that the sea cucumber-shaped copper-nickel layer forms powerful mechanical occlusion, and the subsequent solid solution strengthening effect is slowly increased. Heat treatment experiments show that the reliability of the interconnection technology of the sea cucumber-shaped second-level copper-nickel micro-nano layer is good, and long-time heating has no great influence on the interface strength.
In addition, the inventor researches and bonds the single copper second-level sea cucumber-like micro-nano layer instead of the copper nickel second-level sea cucumber-like micro-nano layer, and finds that the single copper second-level sea cucumber-like micro-nano layer has poor interconnection quality and large holes under the same bonding condition, and the effect is inferior to that of the copper nickel second-level sea cucumber-like micro-nano layer.
All the above tests have the same bonding surface area.
It should be finally noted that the above embodiments are only intended to illustrate the technical solutions of the present invention and not to limit the scope of the present invention, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (10)
1. A solid-state bonding method based on a copper-nickel secondary sea cucumber-like micro-nano layer is characterized by comprising the following steps: the surfaces of the two substrates with the sea cucumber-shaped copper-nickel micro-nano layer are mutually contacted to form a contact area, and then the contact area is applied with pressure under the heating condition to carry out bonding; the sea cucumber-shaped copper-nickel micro-nano layer comprises a copper needle layer and a nickel needle layer plated on the surface of the copper needle layer, the copper needle layer is an array layer formed by conical copper micro-needles, and the nickel needle layer comprises an array layer formed by conical nickel nano-needles and protrusions formed on the conical nickel nano-needles.
2. The solid bonding method as claimed in claim 1, wherein the bonding temperature is 210 ℃ and 250 ℃, the bonding pressure is 170 ℃ and 210MPa, and the bonding time is 20min or more.
3. The solid state bonding method of claim 2, wherein the bonding temperature is 240 ℃, the bonding pressure is 180MPa, and the bonding time is 20-25 min.
4. The solid state bonding method of any one of claims 1-3, wherein the bonding is performed in air.
5. The solid state bonding method of any one of claims 1-3, wherein the contact region is subjected to a pre-heating process prior to the application of pressure, the pre-heating temperature being the same as the bonding temperature.
6. The solid state bonding method of any one of claims 1-3, the tapered copper microneedle having a height of 1-3 μm and a root diameter of 1-2 μm; the height of the conical nickel nano needle is 500nm, and the diameter of the needle root is 400 nm; the height of the protrusions is 50-80 nm.
7. The solid state bonding method of any one of claims 1-3, wherein the contact region is also heat treated after the bonding.
8. The solid state bonding method of claim 7, wherein the temperature of the heat treatment is 190 ℃ and 200 ℃, and the time of the heat treatment is 10-100 h.
9. The solid state bonding method of any one of claims 1 to 3, wherein the sea cucumber-like copper-nickel micro-nano layer is formed by electrodeposition.
10. The solid state bonding method of claim 9, wherein a crystallization modifier is used in the preparation of the sea cucumber-like copper-nickel micro-nano layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010110434.2A CN111312603B (en) | 2020-02-21 | 2020-02-21 | Solid-state bonding method based on copper-nickel second-stage sea cucumber-like micro-nano layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010110434.2A CN111312603B (en) | 2020-02-21 | 2020-02-21 | Solid-state bonding method based on copper-nickel second-stage sea cucumber-like micro-nano layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111312603A true CN111312603A (en) | 2020-06-19 |
| CN111312603B CN111312603B (en) | 2021-05-04 |
Family
ID=71160158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010110434.2A Active CN111312603B (en) | 2020-02-21 | 2020-02-21 | Solid-state bonding method based on copper-nickel second-stage sea cucumber-like micro-nano layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111312603B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009143805A1 (en) * | 2008-05-29 | 2009-12-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method and device for cohesively joining metallic connection structures |
| CN104112707A (en) * | 2014-07-03 | 2014-10-22 | 上海交通大学 | Solid ultrasonic bonding method based on heterogeneous structures of nickel and copper micro cones |
| CN104201123A (en) * | 2014-08-15 | 2014-12-10 | 上海交通大学 | Low temperature solid state bonding method through surface micro-nano structure |
| US20180200840A1 (en) * | 2015-07-24 | 2018-07-19 | Northeastem University | Low-Temperature Bonding With Spaced Nanorods And Eutectic Alloys |
-
2020
- 2020-02-21 CN CN202010110434.2A patent/CN111312603B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009143805A1 (en) * | 2008-05-29 | 2009-12-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method and device for cohesively joining metallic connection structures |
| CN104112707A (en) * | 2014-07-03 | 2014-10-22 | 上海交通大学 | Solid ultrasonic bonding method based on heterogeneous structures of nickel and copper micro cones |
| CN104201123A (en) * | 2014-08-15 | 2014-12-10 | 上海交通大学 | Low temperature solid state bonding method through surface micro-nano structure |
| US20180200840A1 (en) * | 2015-07-24 | 2018-07-19 | Northeastem University | Low-Temperature Bonding With Spaced Nanorods And Eutectic Alloys |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111312603B (en) | 2021-05-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI538762B (en) | Stud bump and package structure thereof and method of forming the same | |
| TWI304006B (en) | Tin/indium lead-free solders for low stress chip attachment | |
| JP2017514995A (en) | Low pressure sintering powder | |
| JP2011077193A (en) | Method for manufacturing semiconductor device | |
| CN102610537B (en) | Method for low-temperature solid bonding of semiconductor device | |
| JP2011071301A (en) | Joining method and joining body using metal nanoparticle | |
| JP6108987B2 (en) | Connection structure | |
| CN114845977A (en) | Copper-ceramic joined body and insulated circuit board | |
| KR102423021B1 (en) | Forming Method of Cu to Cu Flip Chip Interconnection and Cu to Cu Flip Chip Interconnection Thereby | |
| CN111627823A (en) | Chip connection method for quickly generating high-strength and high-melting-point joint at low temperature | |
| US5023697A (en) | Semiconductor device with copper wire ball bonding | |
| CN111312603B (en) | Solid-state bonding method based on copper-nickel second-stage sea cucumber-like micro-nano layer | |
| CN108588456B (en) | Cu-Sn intermetallic compound framework phase-change material and preparation method thereof | |
| CN104112681A (en) | Solid-state ultrasonic bonding method based on copper microneedle cone | |
| CN109449087A (en) | A kind of copper plating palladium nickel plating bonding wire and preparation method thereof again | |
| CN104112707B (en) | A kind of solid ultrasonic bonding method based on nickel and copper micropin cone foreign structure | |
| CN114121792A (en) | Normal-temperature ultrasonic transient solid-phase bonding method for copper indium micro-nano layer | |
| JP2015080812A (en) | Joint method | |
| CN109590633A (en) | Lead welding filler metal and its preparation method and application for integrated antenna package | |
| KR102279083B1 (en) | Binder Free Cupper Paste and Sinter Bonding Method using the Same | |
| CN104112684A (en) | Solid ultrasonic bonding method based on nickel micro cones | |
| CN114709144A (en) | Surface silver film modification-based super-hydrophobic copper micron layer low-temperature welding method | |
| Xiao et al. | Solid State Bonding Method Based on Cu-Ni Secondary Sea Cucumber Micro-nano Layer | |
| Lu et al. | Ultrasonic-Assisted Micro-Silver Paste Sintering for Flip-Chip Bonding | |
| CN106735672A (en) | The room temperature supersonically preparation method of intermetallic compound joint |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |