CN111308864A - Four-beam laser interference micro-nano machining device - Google Patents
Four-beam laser interference micro-nano machining device Download PDFInfo
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- CN111308864A CN111308864A CN202010214502.XA CN202010214502A CN111308864A CN 111308864 A CN111308864 A CN 111308864A CN 202010214502 A CN202010214502 A CN 202010214502A CN 111308864 A CN111308864 A CN 111308864A
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- 238000003754 machining Methods 0.000 title claims abstract description 24
- 230000005540 biological transmission Effects 0.000 claims abstract description 31
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- 229910052724 xenon Inorganic materials 0.000 claims abstract description 25
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000007769 metal material Substances 0.000 claims description 12
- 229910052755 nonmetal Inorganic materials 0.000 claims description 6
- 229910001200 Ferrotitanium Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
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- 239000010936 titanium Substances 0.000 claims description 3
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- 238000000034 method Methods 0.000 abstract description 15
- 230000010287 polarization Effects 0.000 abstract description 9
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- 239000002086 nanomaterial Substances 0.000 abstract description 6
- 230000005284 excitation Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 11
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
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- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
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Abstract
The application belongs to the technical field of multi-beam laser interference micro-nano processing, and particularly relates to a four-beam laser interference micro-nano processing device and method with phase difference locking. The system aims at the problems of multiple beam splitting devices, complex light path adjustment, inconsistent light intensity, low system reliability and the like of the conventional multi-beam laser interference system. The application provides a four-beam laser interference micro-nano machining device with a phase difference locked four-path output laser as a light source, which comprises a pulse excitation xenon lamp, an Nd-YAG crystal, an output mirror, an 1/4 wave plate, a Q-switching module, a Dammann transmission grating cavity mirror and a reflector which are sequentially arranged. The laser device can directly obtain four beams of light with single longitudinal film, phase difference locking, equal light intensity and consistent polarization state for directly carrying out reflection intersection interference without a light splitting system, has simple device operation, easy adjustment of interference angle and low cost, and can be used for processing large-area, high-efficiency and high-resolution periodic micro-nano structures.
Description
Technical Field
The application belongs to the technical field of laser interference lithography, and particularly relates to a four-beam laser interference micro-nano machining device.
Background
The laser interference photoetching technology utilizes the interference characteristic of light to realize that a plurality of beams of related laser beams meet on the surface of a material substrate to form interference patterns with alternate light and shade and periodic light intensity distribution, thereby generating a periodic micro-nano array structure in modes of exposure, direct writing and the like. Compared with the traditional photoetching technology, the technology has the advantages of no mask, high resolution, low cost, long focal depth, large-area processing and the like, and is highly valued by researchers and users. The nano-structure processed by using multi-beam laser interference is widely applied in many fields, the pattern period obtained by processing photoetching through the technology is determined by the incident angle of a plurality of beams of coherent light, and the incident angle of the output coherent light beam is required to be adjusted to change the corresponding periodic structure according to the processing requirements of different periodic structures. Traditional multi-beam interference photoetching mostly adopts the beam splitting system to split output laser into two and four, when changing the light beam incident angle, the problems of coherence length of the obtained multi-path output laser, intensity and phase consistency of each split beam and the like are also considered, so as to ensure the contrast and photoetching effect of interference fringes, thus leading to complex structure of the device, large adjustment difficulty, low control precision, easy interference by external factors, and still having some defects in the aspects of system stability and processing quality, thus being not easy to popularize.
The existing multi-beam laser photoetching device generally adopts a method of splitting the original laser beam into two parts and four parts, a discrete multi-bracket device is needed, the calibration process is complicated, only the processing of a single-period nano structure can be carried out, the whole set of light path needs to be readjusted when the interference patterns of other periods are needed to be obtained, the process is complex and is not easy to realize; meanwhile, the defects of too many devices, low light energy utilization rate, uneven light intensity distribution of interference fringes and the like exist.
Disclosure of Invention
1. Technical problem to be solved
Based on the common adoption of the existing multi-beam laser photoetching device, a method for splitting the original laser beam into two parts and four parts is adopted, a discrete multi-bracket device is needed, the calibration process is complicated, only the processing of a single-period nano structure can be carried out, the whole set of light path is needed to be readjusted when the interference patterns of other periods are needed to be obtained, and the process is complex and is not easy to realize; meanwhile, the problems of too many devices, low light energy utilization rate, uneven light intensity distribution of interference fringes and the like exist, and the application provides a laser directly generating multipath coherent light.
2. Technical scheme
In order to achieve the aim, the application provides a four-beam laser interference micro-nano processing device which comprises a first laser interference micro-nano processing unit, a second laser interference micro-nano processing unit, a third laser interference micro-nano processing unit and a fourth laser interference micro-nano processing unit, the first laser interference micro-nano processing unit, the semi-reflecting and semi-transmitting mirror and the second laser interference micro-nano processing unit are arranged in sequence, the third laser interference micro-nano processing unit, the semi-reflecting and semi-transmitting mirror and the fourth laser interference micro-nano processing unit are arranged in sequence, the first laser interference micro-nano processing unit and the second laser interference micro-nano processing unit are symmetrical about the semi-reflecting and semi-transmitting mirror, the third laser interference micro-nano processing unit and the fourth laser interference micro-nano processing unit are symmetrical about the semi-reflecting and semi-transmitting mirror, the first laser interference micro-nano processing unit and the third laser interference micro-nano processing unit have the same structure.
Another embodiment provided by the present application is: the first laser interference micro-nano processing unit comprises a reflector, an intracavity output mirror, a laser emitting assembly, an 1/4 wave plate and a Q-switching module which are sequentially arranged.
Another embodiment provided by the present application is: the laser emitting component comprises a high-voltage pulse xenon lamp and Nd-YAG crystals, wherein the high-voltage pulse xenon lamp is arranged opposite to the Nd-YAG crystals; the size of the high-voltage pulse xenon lamp is 7 x 180mm, and the inter-electrode distance is 110 mm; YAG of the laser crystal Ce-Nd has the size of phi 7 x 110 mm.
Another embodiment provided by the present application is: the included angle between the first laser interference micro-nano processing unit and the third laser interference micro-nano processing unit is 30 degrees, and the included angle between the second laser interference micro-nano processing unit and the fourth laser interference micro-nano processing unit is 30 degrees.
Another embodiment provided by the present application is: the laser emitting assembly adopts a working mode of four lamps, four rods and one charging and four discharging.
Another embodiment provided by the present application is: the reflecting mirror is a plane reflecting mirror, the plane reflecting mirror is made of K9 glass, the size of the plane reflecting mirror is phi 30mm, and the reflecting surface of the plane reflecting mirror is plated with a total reflection film HR @1064 nm.
Another embodiment provided by the present application is: the intracavity output mirror is a Dammann transmission grating output mirror.
Another embodiment provided by the present application is: the semi-reflecting and semi-transmitting mirror is a transmission type Dammann grating semi-reflecting and semi-transmitting mirror.
Another embodiment provided by the present application is: the four-beam laser interference micro-nano processing device is used for processing metal materials or non-metal materials.
Another embodiment provided by the present application is: the metal material comprises titanium or stainless steel, and the non-metal material comprises silicon wafers or ceramics.
3. Advantageous effects
Compared with the prior art, the four-beam laser interference micro-nano machining device provided by the application has the beneficial effects that:
the application provides a four-beam laser interference micro-nano processing device, the four-path output laser of design can directly output single longitudinal mode, phase difference locking, light intensity equals, the unanimous four-path laser of polarization state, can obtain four-beam interference through four speculum reflection intersection. The output mirror and the input mirror of the laser are Dammann Transmission Gratings (DTG), the Dammann transmission grating is a novel space coordinate modulation type binary phase grating, the Dammann grating can divide incident light into emergent arrays with equal intensity and same intervals according to requirements, the maximum light intensity of 0 level of a traditional grating and uneven light splitting of all levels are well avoided, the defects of low diffraction efficiency and high loss are overcome, four-path output light is essentially improved in light intensity consistency and light beam uniformity compared with the prior art, due to the fact that no light splitting system exists, a four-beam laser interference processing device built by the four-path output laser can obtain a better interference processing effect, the device is simple to operate, interference angles are easy to adjust, cost is low, and processing of a large-area, high-efficiency and high-resolution micro-nano periodic structure can be achieved.
The application provides a four-beam laser interference receives processingequipment a little adopts the laser instrument of mutual injection formula four ways output, need not through beam splitting system, can directly output single vertical membrane, phase difference locking, light intensity equal, four light beam of polarization state unanimity are used for directly reflecting crossing interference, and its device easy operation interferes the angle and easily adjusts, and is with low costs, can realize the processing of the cycle of large tracts of land, high efficiency, high resolution and receives the structure a little.
The application provides a four-beam laser interference receives processingequipment a little, the pulse laser of four ways output is as the light source, but four parallel beam that the exportable phase difference is invariable, the power is equal, this four laser is fine coherent light. When the four-beam laser interference device is used, the four reflectors can be used for adjusting the distance and the interference included angle during output so as to realize the selection of a processing period, and therefore four-path light beam interference is realized. Laser energy on interference fringes generated by interference of the four laser beams interacts with the processing material, and a pit structure on the surface of the material to be processed can be etched; and the light beam interference can be adjusted according to different requirements, and array micro-nano structures with different periods can be obtained.
The application provides a four-beam laser interference micro-nano machining device, adopts the four-beam laser interference micro-nano machining device based on mutual injection operation four-path output laser to intracavity output mirror and half-reflection half-transmission mirror are transmission type Dammann grating, when guaranteeing output laser efficiency, can also realize the selection of single longitudinal mode. The direct output four ways of laser is single indulges membrane, the phase difference is locked, the light intensity equals, the unanimous parallel light of polarization state, then through four speculum reflection can carry out the adjustment of contained angle between the light beam, this device advantage does not have beam splitting system's existence, the promotion that the technique had before in the aspect of light intensity uniformity and light beam uniformity of gained output light has had essence, can obtain better interference processing effect, traditional beam splitting and adjustment mode have been simplified, the reliability of system, convenience and efficiency have been improved greatly.
Drawings
Fig. 1 is a schematic structural diagram of a four-beam laser interference micro-nano machining device according to the present application;
in the figure: 1-first pulse xenon lamp, 2-first laser crystal Ce-Nd YAG, 3-first 1/4 wave plate, 4-first Q-switched module, 5-first Dammann transmission grating cavity mirror, 6-second pulse xenon lamp, 7-second laser crystal Ce-Nd YAG, 8-second 1/4 wave plate, 9-second Q-switched module, 10-second Dammann transmission grating cavity mirror, 11-third pulse xenon lamp, 12-third laser crystal Ce-Nd YAG, 13-third 1/4 wave plate, 14-third Q-switched module, 15-third Dammann transmission grating cavity mirror, 16-fourth pulse xenon lamp, 17-fourth laser crystal Ce-Nd, 18-fourth 1/4, 19-fourth Q-switched module, 20-a fourth Dammann transmission grating cavity mirror, 21-a half-reflecting and half-transmitting mirror, 22-a first reflector, 23-a second reflector, 24-a third reflector, 25-a fourth reflector and 26-a material to be processed.
Detailed Description
Hereinafter, specific embodiments of the present application will be described in detail with reference to the accompanying drawings, and it will be apparent to those skilled in the art from this detailed description that the present application can be practiced. Features from different embodiments may be combined to yield new embodiments, or certain features may be substituted for certain embodiments to yield yet further preferred embodiments, without departing from the principles of the present application.
The existing multi-beam laser interference processing devices all use a laser with single beam output, split the original beam by using various splitting methods (such as a beam splitting method, a microlens array beam splitting method, a grating beam splitting method, etc.), and then reflect and intersect each split beam by using a reflector to obtain interference.
Referring to fig. 1, the application provides a four-beam laser interference micro-nano processing device, which comprises a first laser interference micro-nano processing unit, a second laser interference micro-nano processing unit, a third laser interference micro-nano processing unit and a fourth laser interference micro-nano processing unit, the first laser interference micro-nano processing unit, the semi-reflecting and semi-transmitting mirror and the second laser interference micro-nano processing unit are arranged in sequence, the third laser interference micro-nano processing unit, the semi-reflecting and semi-transmitting mirror and the fourth laser interference micro-nano processing unit are arranged in sequence, the first laser interference micro-nano processing unit and the second laser interference micro-nano processing unit are symmetrical about the semi-reflecting and semi-transmitting mirror, the third laser interference micro-nano processing unit and the fourth laser interference micro-nano processing unit are symmetrical about the semi-reflecting and semi-transmitting mirror, the first laser interference micro-nano processing unit and the third laser interference micro-nano processing unit have the same structure.
Further, the first laser interference micro-nano processing unit comprises a reflecting mirror, an intracavity output mirror, a laser emitting assembly, an 1/4 wave plate and a Q-switching module which are sequentially arranged.
Specifically, the first laser interference micro-nano processing unit comprises a first reflecting mirror 22, a first Dammann transmission grating cavity mirror 5, a first laser emitting assembly, a first 1/4 wave plate 3 and a first Q-switching module 4 which are sequentially arranged; the second laser interference micro-nano processing unit comprises a second reflecting mirror 23, a second Dammann transmission grating cavity mirror 10, a second laser emitting component, a second 1/4 wave plate 8 and a second Q-switching module 9 which are sequentially arranged, the third laser interference micro-nano processing unit comprises a third reflecting mirror 24, a third Dammann transmission grating cavity mirror 15, a third laser emitting component, a third 1/4 wave plate 13 and a third Q-switching module 14 which are sequentially arranged, and the fourth laser interference micro-nano processing unit comprises a fourth reflecting mirror 25, a fourth Dammann transmission grating cavity mirror 20, a fourth laser emitting component, a fourth 1/4 wave plate 18 and a fourth Q-switching module 19 which are sequentially arranged.
1/4 wave plates (including 3, 8, 13, 18) can polarize and analyze the four beams of light respectively, cooperate with Q switch to adjust Q to obtain nanosecond pulse light, and output laser is the linear polarization state, can realize best interference effect.
The Q-switching module (comprising 4, 9, 14 and 19) respectively performs Q-switching on each path of pulse laser, but the optical path outputs high-energy pulse laser with nanosecond pulse width.
Further, the laser emitting component comprises a high-voltage pulse xenon lamp and an Nd-YAG crystal, wherein the high-voltage pulse xenon lamp is arranged opposite to the Nd-YAG crystal; the size of the high-voltage pulse xenon lamp is 7 x 180mm, and the inter-electrode distance is 110 mm; YAG of the laser crystal Ce-Nd has the size of phi 7 x 110 mm.
Specifically, the first laser emitting assembly comprises a first pulse xenon lamp 1 and a first laser crystal Ce-Nd: YAG2, wherein the first pulse xenon lamp 1 and the first laser crystal Ce-Nd: YAG2 form a laser pumping source and a working substance; the second laser emitting component comprises a second pulse xenon lamp 6 and a second laser crystal Ce-Nd: YAG7, the second pulse xenon lamp 6 and the second laser crystal Ce-Nd: YAG7 form a laser pumping source and a working substance, the third laser emitting component comprises a third pulse xenon lamp 11 and a third laser crystal Ce-Nd: YAG12, and the third pulse xenon lamp 11 and the third laser crystal Ce-Nd: YAG12 form the laser pumping source and the working substance; the fourth laser emitting component comprises a fourth pulse xenon lamp 16 and a fourth laser crystal Ce-Nd: YAG17, and the fourth pulse xenon lamp 16 and the fourth laser crystal Ce-Nd: YAG17 form a laser pumping source and a working substance.
YAG pulse solid laser is output in four ways based on mutual injection operation, each pulse xenon lamp, a Ce-Nd YAG crystal, an 1/4 wave plate and a Q-switching module form a laser generating unit, optical axes of two opposite laser generating units are on the same straight line, two optical axes formed by four light rays form an included angle of 30 degrees (an included angle between two symmetrical Dammann transmission gratings DTG first-order diffractions), and the center of the half-reflecting and half-transmitting mirror 21 is superposed with the intersection point of the two optical axes. After each path of light beam emitted by the working substance is subjected to electro-optical Q modulation, the light beam can be injected into other light paths in a reflection or transmission mode through the DTG semi-reflecting and semi-transmitting mirror at the central position, the polarization state modulation is carried out through the 1/4 wave plate, and finally, the transmission of specific wavelength and the selection and output of a single longitudinal mode can be realized by adjusting the angle of the DTG output mirror through the output cavity mirror (5, 10, 15 and 20) serving as a transmission Dammann grating; thereby obtaining the preparation of four paths of mutual injection beams. The generated mutually-injected four-path parallel beams are converged by the reflectors (22, 24, 23 and 25) to finally form interference on the surface of the material to be processed 26. The included angles of the four light beams can be further adjusted by designing the angle of the reflector, so that different processing periods can be obtained.
Further, the included angle between the first laser interference micro-nano processing unit and the third laser interference micro-nano processing unit is 30 degrees, and the included angle between the second laser interference micro-nano processing unit and the fourth laser interference micro-nano processing unit is 30 degrees.
Furthermore, the laser emitting assembly adopts a working mode of four lamps, four rods and one charging and four discharging.
Further, the reflecting mirror is a plane reflecting mirror, the plane reflecting mirror is made of K9 glass, the size of the plane reflecting mirror is phi 30mm, and the reflecting surface of the plane reflecting mirror is plated with a total reflection film HR @1064 nm. The reflection angle of the four interference beams can be adjusted to adjust the included angle between the four interference beams, so that the adjustment of the processing period is realized.
Further, the intracavity output mirror is a Dammann transmission grating output mirror. By adjusting the angle, the transmission of specific wavelengths can be realized, the transmission can ensure low-loss output of output light, and meanwhile, the transmission type Dammann grating semi-transparent mirror can work together with a half-reflection mirror (25) serving as a transmission type Dammann grating to realize the selection and output of a single longitudinal mode.
Further, the semi-reflecting and semi-transmitting mirror is a transmission type Dammann grating semi-reflecting and semi-transmitting mirror. The central point is positioned at the intersection point of the optical axes of the four optical elements, and the function of the four optical elements enables each path of light beam to be injected into the rest optical paths in a reflection or transmission mode, so that the four paths of light are mutually injected for many times, the selection of a single longitudinal mode is realized by matching with a cavity output cavity mirror which is also a transmission type grating, and finally the four paths of laser output with a single longitudinal film, phase difference locking, equal light intensity and consistent polarization state are obtained.
Further, the four-beam laser interference micro-nano processing device is used for processing metal materials or non-metal materials.
Further, the metal material comprises titanium or stainless steel, and the non-metal material comprises silicon wafer or ceramic.
Example (b):
referring to fig. 1 (three-dimensional perspective view), the present application focuses on a four-beam laser interference micro-nano processing device with phase difference locking.
The laser is a specially designed four-output Ce-Nd-YAG pulse solid laser which operates based on a mutual injection mode, each pulse xenon lamp, Ge-Nd-YAG crystal, 1/4 wave plate and Q-switching module form a laser generating unit, the optical axes of two opposite laser generating units are on the same straight line, two optical axes formed by four light rays form an included angle of 30 degrees (the included angle between two symmetrical TDG first-order diffractions), and the center of the half-reflecting and half-transmitting mirror is superposed with the intersection point of the two optical axes.
YAG and a pulse xenon lamp and a laser crystal Ce-Nd are used as a pumping source and a working substance, and a four-lamp four-rod one-charge four-discharge working mode is adopted. After each path of light beam emitted by the working substance passes through the electro-optical modulator Q, the light beam can be injected into other light paths in a reflection or transmission mode through the TDG semi-reflection and semi-transmission lens at the central position, the polarization state modulation is carried out through the 1/4 wave plate, the transmission Dammann grating is matched as an intracavity output lens, and the transmission of specific wavelength and the selection and output of a single longitudinal mode can be realized by adjusting the TDG angle of the output lens; thereby obtaining the preparation of four paths of mutual injection beams. Finally, four paths of mutual injection output light with the output wavelength of 1064nm, the pulse width of 8ns, the single pulse energy of 500mJ, the diameter of the emergent beam of phi 7mm and the divergence angle of 3mrad can be obtained. The four beams of light are respectively reflected by the reflectors and intersect at one point to realize interference, and the interference pattern acts on the surface of the material to be processed to obtain the periodic micro-nano structure. The included angles of the four light beams can be adjusted by designing the angle of the reflector, so that different processing periods can be obtained.
The invention provides a four-beam laser interference micro-nano processing device locked by phase difference and a method thereof, aiming at the bottleneck (unequal light intensity after light splitting, too many light splitting elements, difficult adjustment and low system reliability) encountered by the traditional multi-beam interference processing technology. The method is characterized in that a light splitting system is not needed, four output lasers which are injected into each other and operated are used for directly outputting four single longitudinal films, phase differences are locked, light intensity is equal, parallel light beams with the same polarization state are directly output for the first time, then four reflectors are used for adjusting included angles among the light beams and selecting a processing period, and a good four-path interference light array is obtained. The invention replaces the light splitting method of dividing the traditional system into two and four, solves the problems of unequal light intensity, difficult adjustment and low reliability caused by the discrete multi-support in the prior art scheme by using the light splitting system, and greatly improves the convenience, reliability and efficiency of the system. The invention has the advantages of simple and convenient light path adjustment, controllable processing size, high efficiency, suitability for low-cost mass production, simple operation and the like.
Although the present application has been described above with reference to specific embodiments, those skilled in the art will recognize that many changes may be made in the configuration and details of the present application within the principles and scope of the present application. The scope of protection of the present application is determined by the appended claims, and all changes that come within the meaning and range of equivalency of the claims are intended to be embraced therein.
Claims (10)
1. A four-beam laser interference micro-nano processing device is characterized in that: the micro-nano machining device comprises a first laser interference micro-nano machining unit, a second laser interference micro-nano machining unit, a third laser interference micro-nano machining unit and a fourth laser interference micro-nano machining unit, wherein the first laser interference micro-nano machining unit, a semi-reflecting semi-transparent mirror and the second laser interference micro-nano machining unit are sequentially arranged, the third laser interference micro-nano machining unit, the semi-reflecting semi-transparent mirror and the fourth laser interference micro-nano machining unit are sequentially arranged, the first laser interference micro-nano machining unit and the second laser interference micro-nano machining unit are symmetrical about the semi-reflecting semi-transparent mirror, the third laser interference micro-nano machining unit and the fourth laser interference micro-nano machining unit are symmetrical about the semi-reflecting semi-transparent mirror, and the first laser micro-nano interference machining unit and the third laser interference micro-nano machining unit are identical in structure.
2. The four-beam laser interference micro-nano processing device according to claim 1, characterized in that: the first laser interference micro-nano processing unit comprises a reflector, an intracavity output mirror, a laser emitting assembly, an 1/4 wave plate and a Q-switching module which are sequentially arranged.
3. The four-beam laser interference micro-nano processing device according to claim 2, characterized in that: the laser emitting component comprises a high-voltage pulse xenon lamp and Nd-YAG crystals, wherein the high-voltage pulse xenon lamp is arranged opposite to the Nd-YAG crystals; the size of the high-voltage pulse xenon lamp is 7 x 180mm, and the inter-electrode distance is 110 mm; YAG of the laser crystal Ce-Nd has the size of phi 7 x 110 mm.
4. The four-beam laser interference micro-nano processing device according to claim 1, characterized in that: the included angle between the first laser interference micro-nano processing unit and the third laser interference micro-nano processing unit is 30 degrees, and the included angle between the second laser interference micro-nano processing unit and the fourth laser interference micro-nano processing unit is 30 degrees.
5. The four-beam laser interference micro-nano machining device according to any one of claims 2 to 4, wherein: the laser emitting assembly adopts a working mode of four lamps, four rods and one charging and four discharging.
6. The four-beam laser interference micro-nano processing device according to claim 5, characterized in that: the reflecting mirror is a plane reflecting mirror, the plane reflecting mirror is made of K9 glass, the size of the plane reflecting mirror is phi 30mm, and the reflecting surface of the plane reflecting mirror is plated with a total reflection film HR @1064 nm.
7. The four-beam laser interference micro-nano processing device according to claim 5, characterized in that: the intracavity output mirror is a Dammann transmission grating output mirror.
8. The four-beam laser interference micro-nano processing device according to claim 5, characterized in that: the semi-reflecting and semi-transmitting mirror is a transmission type Dammann grating semi-reflecting and semi-transmitting mirror.
9. The four-beam laser interference micro-nano processing device according to claim 5, characterized in that: the four-beam laser interference micro-nano processing device is used for processing metal materials or non-metal materials.
10. The four-beam laser interference micro-nano processing device according to claim 9, characterized in that: the metal material comprises titanium or stainless steel, and the non-metal material comprises silicon wafers or ceramics.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010214502.XA CN111308864A (en) | 2020-03-24 | 2020-03-24 | Four-beam laser interference micro-nano machining device |
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| CN202010214502.XA CN111308864A (en) | 2020-03-24 | 2020-03-24 | Four-beam laser interference micro-nano machining device |
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