CN111308310A - Dynamic rds (on) parameter testing machine of gallium nitride device - Google Patents
Dynamic rds (on) parameter testing machine of gallium nitride device Download PDFInfo
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- CN111308310A CN111308310A CN202010410631.6A CN202010410631A CN111308310A CN 111308310 A CN111308310 A CN 111308310A CN 202010410631 A CN202010410631 A CN 202010410631A CN 111308310 A CN111308310 A CN 111308310A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2637—Circuits therefor for testing other individual devices
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Abstract
The invention discloses a dynamic rds (on) parameter testing machine of a gallium nitride device, which comprises: the circuit comprises a switch driver, an energy storage inductor, a load resistor, a bleeder diode, a voltage source, a first constant current source, a second constant current source, a first diode, a second diode, a first current limiting resistor, a second current limiting resistor, a first input node, a second input node, a differential amplifier and a signal output node. The characteristic that the current of the energy storage inductor can not change suddenly is utilized, so that the current flowing through the gallium nitride device is still kept in an initial state at the moment when the gallium nitride device is started, and meanwhile, the induced current of the energy storage inductor is guaranteed to be discharged when the gallium nitride is disconnected by utilizing the current discharge diode. The circuits connected with the first differential input end and the second differential input end of the differential amplifier are arranged in a symmetrical mode, so that noise interference is eliminated, and the precision of the whole testing machine is improved. The tester is mainly used for testing the dynamic Rds (on) parameters of the gallium nitride device.
Description
Technical Field
The invention relates to the technical field of testing, in particular to a dynamic rds (on) parameter testing machine of a gallium nitride device.
Background
Compared with the traditional silicon-based semiconductor device, the gallium nitride (GaN) device has the advantages of higher efficiency, higher frequency and smaller volume. The conventional GaN device needs to test the dynamic rds (on) parameter of the GaN device, which is the resistance between D, S when the drain D and the source S of the FET (gallium nitride (GaN) device) are turned on, and since the resistance dynamically changes when the FET is made of GaN material, the parameter is also called dynamic rds (on) parameter. The conventional method is to use the dynamic rds (on) parameter of the gan device of the tester for testing si-based semiconductor devices. Since the dynamic rds (on) parameter of the gan device is rapidly decreased when it is turned on, the testing machine needs to have high stability and reliability if the dynamic rds (on) parameter needs to be accurately tested. The existing testing machine often cannot meet the requirements.
Disclosure of Invention
It is an object of the present invention to provide a dynamic rds (on) parameter tester for gan devices, which solves one or more of the problems of the prior art and provides at least one of the advantages.
The solution of the invention for solving the technical problem is as follows: a dynamic Rds (on) parameter tester of gallium nitride device comprises: the circuit comprises a switch driver, an energy storage inductor, a load resistor, a bleeder diode, a voltage source, a first constant current source, a second constant current source, a first diode, a second diode, a first current limiting resistor, a second current limiting resistor, a first input node, a second input node, a differential amplifier and a signal output node;
the energy storage inductor, the load resistor and the gallium nitride device are connected in series, the voltage source provides a test voltage for the gallium nitride device, a circuit formed by connecting the energy storage inductor and the load resistor in series is connected with the bleeder diode in parallel, the cathode of the bleeder diode is connected with the energy storage inductor, and the anode of the bleeder diode is connected with the load resistor;
the output end of the first constant current source is connected with the anode of a first diode through a first input node, the cathode of the first diode is connected with one end of a first current-limiting resistor, and the other end of the first current-limiting resistor is connected with the drain electrode of the gallium nitride device;
the output end of the second constant current source is connected with the anode of a second diode through a second input node, the cathode of the second diode is connected with one end of a second current-limiting resistor, the other end of the second current-limiting resistor is connected with the source electrode of the gallium nitride device, and the source electrode of the gallium nitride device is connected with the ground;
the first input node is connected with a first differential input end of the differential amplifier, and the second input node is connected with a second differential input end of the differential amplifier;
the signal output node is connected with the output end of the differential amplifier;
the second constant current source is a mirror image constant current source of the first constant current source, the second diode is a mirror image diode of the first diode, and the second current limiting resistor is a mirror image resistor of the first current limiting resistor;
the bleeder diode is used for bleeding off the induced current of the energy storage inductor in the off period of the gallium nitride device;
the output end of the switch driver is connected with the grid electrode of the gallium nitride device, and the switch driver is used for outputting pulse waves for controlling the gallium nitride device to be alternately switched on and switched off;
the energy storage inductor is used for generating induced electromotive force during the starting period of the gallium nitride device;
the differential amplifier is used for responding to the signal difference of the first differential input end and the second differential input end to output a voltage signal.
Furthermore, the tester also comprises a receiver, and the input end of the receiver is connected with the signal output node.
Further, the receiver is an electronic spectrometer.
Further, the first diode and the second diode are both D1N4148 in type.
Further, the output currents of the first constant current source and the second constant current source are both 1 mA.
Further, the resistance values of the first current limiting resistor and the second current limiting resistor are both 10k omega.
The invention has the beneficial effects that: the characteristic that the current of the energy storage inductor can not change suddenly is utilized, so that the current flowing through the gallium nitride device is still kept in an initial state at the moment when the gallium nitride device is started, and meanwhile, the current induced by the energy storage inductor is discharged by utilizing the current discharge diode when the gallium nitride is disconnected, so that the whole system is kept in the initial state in the high-speed testing process, and time is won for the second testing loop.
Circuits connected with the first differential input end and the second differential input end of the differential amplifier are arranged in a symmetrical mode, and other interferences are eliminated through the symmetrical mode, so that differential voltage difference input to the differential amplifier is more accurate, noise interference is eliminated, and the precision of the whole testing machine is improved.
The first diode, the second diode, the first current-limiting resistor and the second current-limiting resistor which are passive and have no controlled quantity are selected to construct the second test loop, so that the structure of the second test loop is overall simple, the speed and the stability are high, and the reliability of the overall system is high.
Drawings
In order to more clearly illustrate the technical solution in the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly described below. It is clear that the described figures are only some embodiments of the invention, not all embodiments, and that a person skilled in the art can also derive other designs and figures from them without inventive effort.
Fig. 1 is a schematic circuit diagram of the present tester.
Detailed Description
The conception, the specific structure, and the technical effects produced by the present invention will be clearly and completely described below in conjunction with the embodiments and the accompanying drawings to fully understand the objects, the features, and the effects of the present invention. It is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and those skilled in the art can obtain other embodiments without inventive effort based on the embodiments of the present invention, and all embodiments are within the protection scope of the present invention. In addition, all the coupling/connection relationships mentioned herein do not mean that the components are directly connected, but mean that a better coupling structure can be formed by adding or reducing coupling accessories according to specific implementation conditions. All technical characteristics in the invention can be interactively combined on the premise of not conflicting with each other.
Referring to fig. 1, a dynamic rds (on) parameter tester for gan devices comprises: the switch driver 100, the energy storage inductor 220, the load resistor 230, the bleeder diode 210, the voltage source 250, the first constant current source 311, the second constant current source 321, the first diode 313, the second diode 323, the first current limiting resistor 314, the second current limiting resistor 324, the first input node 312, the second input node 322, the differential amplifier 400 and the signal output node, wherein the energy storage inductor 220, the load resistor 230 and the gallium nitride device 240 are connected in series, and the voltage source 250 supplies power to the energy storage inductor 220, the load resistor 230 and the gallium nitride device 240. The bleeder diode 210 is connected in parallel with a circuit formed by connecting the energy storage inductor 220 and the load resistor 230 in series, the cathode of the bleeder diode 210 is connected with the energy storage inductor 220, and the anode of the bleeder diode 210 is connected with the load resistor 230; the voltage source 250 provides a test voltage to the gallium nitride device 240; the output end of the first constant current source 311 is connected to the anode of a first diode 313 through a first input node 312, the cathode of the first diode 313 is connected to one end of a first current limiting resistor 314, and the other end of the first current limiting resistor 314 is connected to the drain of the gallium nitride device 240; the output end of the second constant current source 321 is connected to the anode of a second diode 323 through a second input node 322, the cathode of the second diode 323 is connected to one end of a second current-limiting resistor 324, the other end of the second current-limiting resistor 324 is connected to the source of the gallium nitride device 240, and the source of the gallium nitride device is connected to ground; the first input node 312 is connected to a first differential input of the differential amplifier 400, and the second input node 322 is connected to a second differential input of the differential amplifier 400; the signal output node is connected to the output of the differential amplifier 400, and the output of the switch driver 100 is connected to the gate of the gallium nitride device 240.
The second constant current source 321 is a mirror constant current source of the first constant current source 311, the second diode 323 is a mirror diode of the first diode 313, and the second current limiting resistor 324 is a mirror resistor of the first current limiting resistor 314. The mirror constant current source means that the parameters and types of the first constant current source 311 and the second constant current source 321 are the same, and the second constant current source 321 and the first constant current source 311 both output the same current. The mirror diode means that the parameters and the model of the second diode 323 and the first diode 313 are the same. The mirror resistance means that the parameters and the types of the second current limiting resistor 324 and the first current limiting resistor 314 are the same.
The switch driver 100, the energy storage inductor 220, the load resistor 230, the bleeder diode 210 and the voltage source 250 form a first test loop 200, and the first test loop 200 is used for generating an environment simulating the operation of the gallium nitride device 240 for the gallium nitride device 240, so that the gallium nitride device 240 generates dynamic rds (on) parameters. The first constant current source 311, the second constant current source 321, the first diode 313, the second diode 323, the first current limiting resistor 314, the second current limiting resistor 324, the first input node 312, the second input node 322, the differential amplifier 400 and the signal output node form a second test loop 300, and the second test loop 300 is configured to reflect the dynamic rds (on) parameter condition of the gallium nitride device 240 by outputting the voltage difference signal. It should be noted that the first diode 313 and the second diode 323 should be selected as few as possible to use components with control terminals, and if the components are in the form of diodes with control terminals (for example, diode-connected form of triode), the speed of the whole testing machine is easy to be unable to keep up, and the stability of the whole system is problematic due to the introduced control quantity.
The working principle of the tester is as follows: the switching driver 100 outputs a pulse wave that controls the gallium nitride device 240 to be alternately turned on and off. When the switch driver 100 outputs a low level, the gan device 240 is turned off, and the test voltage generated by the voltage source 250 is applied between the drain and the source of the gan device 240. The test voltage is not applied to the differential amplifier 400 by the first diode 313 and the second diode 323, thereby protecting the differential amplifier 400 from being burned out. When the switching driver 100 outputs a high level, the gan device 240 is turned on, and the energy storage inductor 220 generates an induced electromotive force that prevents a current therein from varying due to the characteristics of the energy storage inductor 220. Therefore, at this time, the current flowing through the drain and source of the gan device 240 remains at the level when the gan device 240 is turned off just after the gan device 240 is turned on, and the gan device 240 generates the dynamic rds (on) parameter. The current of the first constant current source 311 flows through the gallium nitride device 240, and passes through the dynamic rds (on) parameter to generate an on-state voltage difference between the drain and source of the gallium nitride device 240, which acts between the first differential input terminal and the second differential input terminal of the differential amplifier 400. Since the first constant current source 311 and the second constant current source 321 are in a mirror image relationship, the first diode 313 and the second diode 323 are in a mirror image relationship, and the first current limiting resistor 314 and the second current limiting resistor 324 are in a mirror image relationship, the voltage signal output at the output terminal of the differential amplifier 400 only reflects the influence of the dynamic rds (on) parameter. Since the current of the first constant current source 311 is known, the resistance of the dynamic rds (on) parameter can be obtained by the difference of the differential voltage and the current of the first constant current source 311 according to ohm's law. Thereby completing the testing of the dynamic rds (on) parameters of the gallium nitride device 240.
For testing of the dynamic rds (on) parameter, the initialization of the whole system circuit needs to be maintained for each test cycle. If the initialization is not done well, noise interference is easily generated, thereby reducing the accuracy of the entire tester. Therefore, the tester creatively arranges a bleeder diode 210 which is connected in parallel with a circuit formed by connecting the energy storage inductor 220 and the load resistor 230 in series. By selecting the bleeder diode 210 with proper parameters, the bleeder diode 210 can completely discharge the induced current of the energy storage inductor 220 in the off period of the gallium nitride device 240, so that the whole testing machine can keep an initial state when the gallium nitride device 240 is turned on. Moreover, by utilizing the characteristic that the current of the energy storage inductor 220 cannot suddenly change, the current flowing through the gallium nitride device 240 still keeps the initial state at the moment when the gallium nitride device 240 is turned on, so that the time is won for the second test loop 300, and the dynamic rds (on) parameter of the gallium nitride device 240 is tested under the condition that the current of the gallium nitride device 240 still keeps the initial state, so that the influence of large current on the test is avoided.
In order to further improve the precision of the tester, the circuits connected with the first differential input end and the second differential input end of the differential amplifier 400 are creatively arranged in a symmetrical form, and other interferences are eliminated through the symmetrical form, so that the differential voltage difference input to the differential amplifier 400 is more accurate, the noise interference is eliminated, and the precision of the whole tester is improved.
In order to further improve the speed and stability of the tester, the passive and uncontrolled components such as the first diode 313, the second diode 323, the first current limiting resistor 314 and the second current limiting resistor 324 are selected to construct the second test loop 300 in the invention, so that the structure of the second test loop 300 is simple as a whole, the speed and the stability are high, and the reliability of the whole system is high.
The testing speed of the testing machine of the embodiment can reach between 0.5ms and 1 ms.
In order to make the change of the dynamic rds (on) parameter more intuitive, in some preferred embodiments, the tester further includes a receiver 500, an input terminal of the receiver 500 is connected to the signal output node, and the receiver 500 is used for forming a waveform of the received voltage signal with respect to time. Thus, the tester can intuitively grasp the variation of the dynamic rds (on) parameter of the gan device 240 through the relationship waveform. Wherein, in some preferred embodiments, the receiver 500 is an electronic spectrometer.
In some preferred embodiments, the first diode 313 and the second diode 323 are both D1N 4148.
In some preferred embodiments, the output currents of the first constant current source 311 and the second constant current source 321 are both 1 mA. It is found through tests that when the models of the first diode 313 and the second diode 323 are selected to be D1N4148, it is most appropriate to select the output currents of the first constant current source 311 and the second constant current source 321 to be small currents. Theoretically, in the present testing machine, the magnitude of the output current of the first constant current source 311 and the second constant current source 321 is not limited, but it is found through testing that when the model of the first diode 313 and the second diode 323 is selected to be D1N4148, the noise fluctuation generated by selecting a small current is small. The difference voltage is connected into an oscilloscope to find that the obtained waveform is smooth and has little harmonic quantity.
In some preferred embodiments, the first current limiting resistor 314 and the second current limiting resistor 324 have a resistance of 10k Ω.
While the preferred embodiments of the present invention have been illustrated and described, it will be understood by those skilled in the art that the present invention is not limited to the details of the embodiments shown and described, but is capable of numerous equivalents and substitutions without departing from the spirit of the invention and its scope is defined by the claims appended hereto.
Claims (6)
1. A dynamic Rds (on) parameter tester of a gallium nitride device is characterized by comprising: the circuit comprises a switch driver, an energy storage inductor, a load resistor, a bleeder diode, a voltage source, a first constant current source, a second constant current source, a first diode, a second diode, a first current limiting resistor, a second current limiting resistor, a first input node, a second input node, a differential amplifier and a signal output node;
the energy storage inductor, the load resistor and the gallium nitride device are connected in series, the voltage source provides a test voltage for the gallium nitride device, a circuit formed by connecting the energy storage inductor and the load resistor in series is connected with the bleeder diode in parallel, the cathode of the bleeder diode is connected with the energy storage inductor, and the anode of the bleeder diode is connected with the load resistor;
the output end of the first constant current source is connected with the anode of a first diode through a first input node, the cathode of the first diode is connected with one end of a first current-limiting resistor, and the other end of the first current-limiting resistor is connected with the drain electrode of the gallium nitride device;
the output end of the second constant current source is connected with the anode of a second diode through a second input node, the cathode of the second diode is connected with one end of a second current-limiting resistor, the other end of the second current-limiting resistor is connected with the source electrode of the gallium nitride device, and the source electrode of the gallium nitride device is connected with the ground;
the first input node is connected with a first differential input end of the differential amplifier, and the second input node is connected with a second differential input end of the differential amplifier;
the signal output node is connected with the output end of the differential amplifier;
the second constant current source is a mirror image constant current source of the first constant current source, the second diode is a mirror image diode of the first diode, and the second current limiting resistor is a mirror image resistor of the first current limiting resistor;
the bleeder diode is used for bleeding off the induced current of the energy storage inductor in the off period of the gallium nitride device;
the output end of the switch driver is connected with the grid electrode of the gallium nitride device, and the switch driver is used for outputting pulse waves for controlling the gallium nitride device to be alternately switched on and switched off;
the energy storage inductor is used for generating induced electromotive force during the starting period of the gallium nitride device;
the differential amplifier is used for responding to the signal difference of the first differential input end and the second differential input end to output a voltage signal.
2. The dynamic rds (on) parameter tester for gan device according to claim 1, wherein: the signal output node is connected with the input end of the receiver.
3. The dynamic rds (on) parameter tester for gan device according to claim 2, wherein: the receiver is an electronic spectrum device.
4. The dynamic rds (on) parameter tester for gan device according to claim 1, wherein: the first diode and the second diode are both D1N4148 in type.
5. The dynamic rds (on) parameter tester for gan device according to claim 1, wherein: the output currents of the first constant current source and the second constant current source are both 1 mA.
6. The dynamic rds (on) parameter tester for gan device according to claim 1, wherein: the resistance values of the first current limiting resistor and the second current limiting resistor are both 10k omega.
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Cited By (1)
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| CN111308310B (en) | 2020-08-21 |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Chen Xichen Inventor after: Liu Lianxiang Inventor after: Zhong Youquan Inventor before: Chen Xichen |
|
| CP02 | Change in the address of a patent holder | ||
| CP02 | Change in the address of a patent holder |
Address after: No.16 Guangming Avenue, new light source industrial base, national high tech Zone, Nanhai District, Foshan City, Guangdong Province, 528200 Patentee after: Foshan Linkage Technology Co.,Ltd. Address before: 528000, Guangdong City, Foshan Province Nanhai District Guangming Village Road 16, Foshan linkage technology industry Co., Ltd. plant Patentee before: Foshan Linkage Technology Co.,Ltd. |