CN111303772A - Ultrafast low-loss silicon carbide substrate polishing solution and preparation method thereof - Google Patents
Ultrafast low-loss silicon carbide substrate polishing solution and preparation method thereof Download PDFInfo
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- 238000005498 polishing Methods 0.000 title claims abstract description 158
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 60
- 239000000758 substrate Substances 0.000 title claims abstract description 53
- 238000002360 preparation method Methods 0.000 title abstract description 12
- 239000000654 additive Substances 0.000 claims abstract description 51
- 230000000996 additive effect Effects 0.000 claims abstract description 51
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000007788 liquid Substances 0.000 claims abstract description 34
- 239000002245 particle Substances 0.000 claims abstract description 31
- 238000002156 mixing Methods 0.000 claims abstract description 25
- 239000002113 nanodiamond Substances 0.000 claims abstract description 23
- 239000000843 powder Substances 0.000 claims abstract description 22
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 20
- 239000000741 silica gel Substances 0.000 claims abstract description 20
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 20
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 19
- 238000000227 grinding Methods 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000007800 oxidant agent Substances 0.000 claims abstract description 7
- 230000001590 oxidative effect Effects 0.000 claims abstract description 7
- 239000003381 stabilizer Substances 0.000 claims abstract description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 12
- 239000008367 deionised water Substances 0.000 claims description 9
- 229910021641 deionized water Inorganic materials 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000004321 preservation Methods 0.000 claims description 7
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 claims description 6
- 239000002270 dispersing agent Substances 0.000 claims description 6
- GCLGEJMYGQKIIW-UHFFFAOYSA-H sodium hexametaphosphate Chemical compound [Na]OP1(=O)OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])O1 GCLGEJMYGQKIIW-UHFFFAOYSA-H 0.000 claims description 6
- 235000019982 sodium hexametaphosphate Nutrition 0.000 claims description 6
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 claims description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical group CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 4
- QNVRIHYSUZMSGM-UHFFFAOYSA-N hexan-2-ol Chemical compound CCCCC(C)O QNVRIHYSUZMSGM-UHFFFAOYSA-N 0.000 claims description 4
- 239000004115 Sodium Silicate Substances 0.000 claims description 3
- 239000012286 potassium permanganate Substances 0.000 claims description 3
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 3
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 2
- 239000000194 fatty acid Substances 0.000 claims description 2
- 229930195729 fatty acid Natural products 0.000 claims description 2
- 150000004665 fatty acids Chemical class 0.000 claims description 2
- 229920002401 polyacrylamide Polymers 0.000 claims description 2
- 235000019832 sodium triphosphate Nutrition 0.000 claims description 2
- 239000003002 pH adjusting agent Substances 0.000 claims 2
- 229920001522 polyglycol ester Polymers 0.000 claims 1
- 239000002002 slurry Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 23
- 238000003754 machining Methods 0.000 abstract description 4
- 230000003746 surface roughness Effects 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention relates to the technical field of chemical mechanical polishing, in particular to an ultra-fast low-loss silicon carbide substrate polishing solution and a preparation method thereof, wherein the ultra-fast low-loss silicon carbide substrate polishing solution comprises an additive and a polishing base solution, and the polishing base solution comprises nano diamond micro powder, a strong oxidant, a stabilizer and the like; the additive comprises graphene, tungsten carbide, silica gel and titanium dioxide in a certain weight ratio; grinding each component of the additive into particles of 0.1-0.35 mu m, mixing and heating the graphene, the tungsten carbide and the titanium dioxide, adding the silica gel particles, and continuously grinding; then adding the mixture into polishing base liquid with the temperature of 30-39 ℃ for mixing; the additive has the function of balancing friction force during polishing of the polishing base liquid, so that the problem of scratches or roughness aggravation caused by accelerated polishing speed can be avoided in the process of high-speed polishing of the silicon carbide substrate, the purposes of reducing surface roughness and scratches are achieved while high-speed polishing is realized, and the whole finish machining process is high in machining precision and automation degree.
Description
Technical Field
The invention belongs to the technical field of chemical mechanical polishing, and particularly relates to an ultra-fast low-loss silicon carbide substrate polishing solution and a preparation method thereof.
Background
At present, a polishing sheet for an LED substrate mainly comprises sapphire and silicon carbide, but the difference between the lattice constant of the sapphire substrate and the lattice constant of GaN is large, so that the problem of large lattice mismatch and thermal stress mismatch of an epitaxial film exists, and the sapphire substrate is difficult to radiate and difficult to work in a high-temperature environment. The silicon carbide substrate has high thermal conductivity, can be well matched with the GaN epitaxial film, and can still normally work in an environment with the temperature of more than 650 ℃.
The silicon carbide substrate has wide forbidden band, high breakdown electric field, high heat conductivity, low thermal expansion coefficient and high temperature stability, so that the silicon carbide substrate can be used for microelectronic components under extremely severe conditions in the fields of high-power and high-temperature electronic devices, aerospace, nuclear energy and the like. The silicon carbide device can reduce the power consumption of electronic products and reduce the heat generated in the working process, thereby greatly improving the efficiency of electronic equipment, and becoming a novel semiconductor substrate material with most application prospect after the first generation and the second generation of semiconductor silicon and gallium arsenide. High-grade commercial microelectronic devices, smooth, defect-free substrate wafers are important to obtain high quality epitaxial layers, and silicon carbide substrates are required to have defect-free surfaces and ultra-clean surfaces. CMP chemical mechanical polishing is considered to be the most important step in the substrate preparation process.
Silicon carbide production faces a number of challenges, primarily in terms of both high hardness and chemical inertness. The method comprises the steps of polishing a thin silicon carbide wafer with the thickness of 350-550 mu m by using a grinding medium containing nano diamond particles and adding various chemical substances to enable the surface of the silicon carbide wafer to reach the required roughness, and representing the damage condition of a Si silicon surface of a polished surface by using an AFM atomic force microscope, but the problems of poor flatness and surface damage frequently occur in the polishing of the silicon carbide surface.
Disclosure of Invention
The invention overcomes the defects in the prior art, provides the ultra-fast low-loss silicon carbide substrate polishing solution and the preparation method thereof, aims to obtain the silicon carbide substrate surface with low roughness, high flatness and small subsurface damage, and provides basic processing conditions for subsequent chemical mechanical precision polishing.
The invention is realized by the following technical scheme.
The ultra-fast low-loss silicon carbide substrate polishing solution comprises a polishing base solution and an additive, wherein the mass ratio of the additive to the polishing base solution is 0.01-0.03:3-6, and the polishing base solution comprises: nano diamond micro powder, deionized water, a strong oxidant, a stabilizer and a dispersant; the additive comprises the following components in percentage by weight: 40-69% of graphene, 20-35% of tungsten carbide, 6-15% of silica gel and 6-15% of titanium dioxide, wherein the sum is 100%.
Preferably, the additive comprises the following components in percentage by weight: 58% of graphene, 24% of tungsten carbide, 7% of silica gel and 11% of titanium dioxide.
Preferably, the pH regulator is also included, and the pH value of the pH regulator is in a range of 2-10.
Preferably, the strong oxidant is hydrogen peroxide or potassium permanganate.
Preferably, the stabilizer is tetraethoxysilane or KH560 or a combination of the tetraethoxysilane and the KH 560.
Preferably, the dispersant is one or any combination of sodium tripolyphosphate, sodium hexametaphosphate, cetyl trimethyl ammonium bromide, sodium silicate, methyl amyl alcohol, fatty acid polyethylene glycol ester, polyacrylamide and sodium dodecyl sulfate.
Preferably, the particle size of the nano-diamond micro-powder is 0.25 μm to 1.0 μm.
Preferably, the particle size of the additive is 0.1 to 0.35 μm.
Preferably, the nano diamond micro powder is spherical cleavable diamond polycrystalline micro powder.
A preparation method of an ultra-fast low-loss silicon carbide substrate polishing solution comprises the following steps:
1) grinding the components of the additive respectively, taking particles with the particle size of 0.1-0.35 mu m, fully and uniformly mixing graphene, tungsten carbide and titanium dioxide, heating to 30-35 ℃, adding silica gel particles, continuously mixing and grinding for 30-50min to obtain the additive.
2) Mixing deionized water, nano-diamond micro powder, a strong oxidant, a stabilizer and a dispersant according to a proportion to prepare polishing base liquid, and heating and insulating the polishing base liquid to keep the temperature of the polishing base liquid at 30-39 ℃.
3) And (3) putting the additive prepared in the step (1) into the polishing base liquid in a heat preservation state, fully mixing and homogenizing to obtain the polishing liquid.
The method for mechanical polishing by adopting the polishing solution comprises the following specific steps:
pressing a silicon carbide substrate slice on a polishing disk stuck with a polishing pad from top to bottom, introducing free processing media such as polishing solution between the polishing pad and the silicon carbide wafer for polishing, wherein the temperature required by the polishing solution is 30-35 ℃, and the pressure required by the polishing machine is 200-sodium silicate glass 500 g/cm2The rotating speed of the polishing disk is 20-50 rpm. The polishing machine is a single-side chemical mechanical polishing machine in the polishing process, and the single-side processing equipment can apply pressure to the silicon carbide wafer in the processing process and has the characteristics of active driving function and polishing liquid circulation.
Compared with the prior art, the invention has the beneficial effects that.
According to the invention, the polishing solution is adopted to carry out chemical mechanical polishing on the silicon carbide substrate, the obtained polished wafer has low surface roughness and few scratches, and the whole finish machining process has high machining precision and high automation degree; the additive has a force for balancing friction during polishing to the polishing base liquid, so that the problem of scratches or roughness aggravation caused by accelerated polishing speed can be avoided in the process of high-speed polishing of the silicon carbide substrate, and the aims of reducing surface roughness and scratches while realizing high-speed polishing are fulfilled; the hardness of the combination of the graphene and the tungsten carbide is closer to that of the nano-diamond micro powder, but the problem of local agglomeration of polishing liquid can be solved under the existence of the pure nano-diamond micro powder, so that the local polishing granularity is increased, the silica gel particles have certain elasticity and flexibility, the silica gel particles are uniformly dispersed in the graphene, the tungsten carbide and the nano-diamond micro powder, the acting force among the three particles is coordinated, the buffering and balancing effects are achieved, the titanium dioxide has the stress degree for further stabilizing the silicon carbide substrate, and the scratches are reduced.
Drawings
FIG. 1 is an apparatus for polishing a silicon carbide substrate according to the present invention.
Wherein, 1 is a silicon carbide substrate slice, 2 is a polishing pad, 3 is a polishing disk, and 4 is polishing liquid.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail with reference to the embodiments and the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. The technical solutions of the present invention are described in detail below with reference to the embodiments and the drawings, but the scope of protection is not limited thereto.
Example 1
Polishing a 4-inch N-type silicon carbide substrate with an inclination of 4 degrees, and then carrying out chemical mechanical polishing, wherein the used chemical mechanical polishing solution consists of a polishing base solution and an additive, and the polishing base solution is as follows: 20000g of deionized water, 320g of nano-diamond micro powder, 80g of potassium permanganate, 100g of ethyl orthosilicate and 20g of sodium silicate, and a proper amount of pH regulator is added; the grain diameter of the nano diamond micro powder is 0.25 mu m; the additive comprises the following components in percentage by weight: 51% of graphene, 30% of tungsten carbide, 9% of silica gel and 10% of titanium dioxide. The mass ratio of the additive to the polishing base liquid is 0.01: 5.
The preparation method of the ultrafast low-loss silicon carbide substrate polishing solution comprises the following steps:
grinding the components of the additive respectively, taking particles with the particle size of 0.1-0.35 mu m, fully and uniformly mixing graphene, tungsten carbide and titanium dioxide, heating to 30-35 ℃, adding silica gel particles, continuously mixing and grinding for 40min to obtain the additive; heating and insulating the polishing base solution to keep the temperature of the polishing base solution at 30-39 ℃; and (3) putting the prepared additive into the polishing base liquid in a heat preservation state, fully mixing and homogenizing to obtain the polishing liquid.
The method for polishing the silicon carbide surface by adopting the chemical mechanical polishing solution comprises the following specific steps:
as shown in figure 1, a silicon carbide substrate slice 1 is pressed on a polishing disk 3 attached with a polishing pad 2 from top to bottom, polishing liquid 4 is introduced between the polishing pad 2 and the silicon carbide substrate slice 1 for polishing, and the liquid supply mode adopts circulating liquid supply. Wherein the polishing pad 2 is a woven resin polishing pad. The temperature required in the polishing process is 35 ℃, and the pressure is 260 g/cm2The polishing disk rotation speed was 30 rpm.
The result after polishing shows that the silicon surface polishing removal rate of the silicon carbide substrate slice can reach 8.1 mu m/h, micro scratches can be seen under an atomic force microscope, and the roughness Ra is less than 1.5 nm.
Example 2
Polishing a 4-inch forward high-purity semi-insulating silicon carbide substrate, and then carrying out chemical mechanical polishing, wherein the used chemical mechanical polishing solution consists of a polishing base solution and an additive, and the polishing base solution is as follows: 20000g of deionized water, 320g of nano-diamond micro powder, 80g of hydrogen peroxide, 100g of KH560, 20g of sodium hexametaphosphate and cetyl trimethyl ammonium bromide, and adding a proper amount of pH regulator; the grain diameter of the nano diamond micro powder is 0.55 mu m; the additive comprises the following components in percentage by weight: 62% of graphene, 23% of tungsten carbide, 6% of silica gel and 9% of titanium dioxide. The mass ratio of the additive to the polishing base liquid is 0.02: 3.
The preparation method of the ultrafast low-loss silicon carbide substrate polishing solution comprises the following steps:
grinding the components of the additive respectively, taking particles with the particle size of 0.1-0.35 mu m, fully and uniformly mixing graphene, tungsten carbide and titanium dioxide, heating to 30-35 ℃, adding silica gel particles, continuously mixing and grinding for 30min to obtain the additive; heating and insulating the polishing base solution to keep the temperature of the polishing base solution at 35 ℃; and (3) putting the prepared additive into the polishing base liquid in a heat preservation state, fully mixing and homogenizing to obtain the polishing liquid.
The method for polishing the silicon carbide surface by using the chemical mechanical polishing solution is the same as that of the example 1.
The result after polishing shows that the silicon surface polishing removal rate of the silicon carbide substrate slice can reach 5.3 mu m/h, micro scratches can be seen under an atomic force microscope, and the roughness Ra is less than 1.5 nm.
Example 3
Polishing a 4-inch P-type silicon carbide substrate with an inclination of 4 degrees, and then carrying out chemical mechanical polishing, wherein the used chemical mechanical polishing solution consists of a polishing base solution and an additive, and the polishing base solution is as follows: 20000g of deionized water, 320g of nano-diamond micro powder, 80g of hydrogen peroxide, 100g of KH560, 20g of sodium hexametaphosphate and cetyl trimethyl ammonium bromide, and adding a proper amount of pH regulator; the grain diameter of the nano diamond micro powder is 0.55 mu m; the additive comprises the following components in percentage by weight: 58% of graphene, 24% of tungsten carbide, 7% of silica gel and 11% of titanium dioxide. The mass ratio of the additive to the polishing base liquid is 0.03: 5.
The preparation method of the ultrafast low-loss silicon carbide substrate polishing solution comprises the following steps:
grinding the components of the additive respectively, taking particles with the particle size of 0.1-0.35 mu m, fully and uniformly mixing graphene, tungsten carbide and titanium dioxide, heating to 35 ℃, adding silica gel particles, and continuously mixing and grinding for 50min to obtain the additive; heating and insulating the polishing base solution to keep the temperature of the polishing base solution at 39 ℃; and (3) putting the prepared additive into the polishing base liquid in a heat preservation state, fully mixing and homogenizing to obtain the polishing liquid.
The method for polishing the silicon carbide surface by using the chemical mechanical polishing solution is the same as that of the example 1.
The result after polishing shows that the silicon surface polishing removal rate of the silicon carbide substrate slice can reach 7.8 mu m/h, micro scratches can be seen under an atomic force microscope, and the roughness Ra is less than 1.5 nm.
Example 4
Polishing a 4-inch forward vanadium-doped semi-insulating silicon carbide substrate, and then carrying out chemical mechanical polishing, wherein the used chemical mechanical polishing solution consists of a polishing base solution and an additive, and the polishing base solution is as follows: 20000g of deionized water, 320g of nano-diamond micro powder, 80g of hydrogen peroxide, 100g of KH560, 20g of sodium hexametaphosphate and cetyl trimethyl ammonium bromide, and adding a proper amount of pH regulator; the grain diameter of the nano diamond micro powder is 0.55 mu m; the additive comprises the following components in percentage by weight: 45% of graphene, 32% of tungsten carbide, 10% of silica gel and 13% of titanium dioxide. The mass ratio of the additive to the polishing base liquid is 0.03: 5.
The preparation method of the ultrafast low-loss silicon carbide substrate polishing solution comprises the following steps:
grinding the components of the additive respectively, taking particles with the particle size of 0.25 mu m, fully and uniformly mixing graphene, tungsten carbide and titanium dioxide, heating to 35 ℃, adding silica gel particles, and continuously mixing and grinding for 50min to obtain the additive; heating and insulating the polishing base solution to keep the temperature of the polishing base solution at 39 ℃; and (3) putting the prepared additive into the polishing base liquid in a heat preservation state, fully mixing and homogenizing to obtain the polishing liquid.
The method for polishing the silicon carbide surface by using the chemical mechanical polishing solution is the same as that of the example 1.
The result after polishing shows that the silicon surface polishing removal rate of the silicon carbide substrate slice can reach 6.2 mu m/h, micro scratches can be seen under an atomic force microscope, and the roughness Ra is less than 1.5 nm.
Example 5
Polishing a 6-inch silicon carbide substrate with an angle of 4 degrees to perform chemical mechanical polishing, wherein the used chemical mechanical polishing solution consists of a polishing base solution and an additive, and the polishing base solution is as follows: 20000g of deionized water, 320g of nano-diamond micro powder, 80g of hydrogen peroxide, 100g of KH560, 20g of sodium hexametaphosphate and cetyl trimethyl ammonium bromide, and adding a proper amount of pH regulator; the grain diameter of the nano diamond micro powder is 0.55 mu m; the additive comprises the following components in percentage by weight: 49% of graphene, 35% of tungsten carbide, 8% of silica gel and 8% of titanium dioxide. The mass ratio of the additive to the polishing base liquid is 0.01: 6.
The preparation method of the ultrafast low-loss silicon carbide substrate polishing solution comprises the following steps:
grinding the components of the additive respectively, taking particles with the particle size of 0.25 mu m, fully and uniformly mixing graphene, tungsten carbide and titanium dioxide, heating to 35 ℃, adding silica gel particles, and continuously mixing and grinding for 50min to obtain the additive; heating and insulating the polishing base solution to keep the temperature of the polishing base solution at 39 ℃; and (3) putting the prepared additive into the polishing base liquid in a heat preservation state, fully mixing and homogenizing to obtain the polishing liquid.
The method for polishing the silicon carbide surface by using the chemical mechanical polishing solution is the same as that of the example 1.
The result after polishing shows that the silicon surface polishing removal rate of the silicon carbide substrate slice can reach 7.9 mu m/h, micro scratches can be seen under an atomic force microscope, and the roughness Ra is less than 1.5 nm.
While the invention has been described in further detail with reference to specific preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. The ultra-fast low-loss silicon carbide substrate polishing solution is characterized by comprising a polishing base solution and an additive, wherein the mass ratio of the additive to the polishing base solution is 0.01-0.03:3-6, and the polishing base solution comprises: nano diamond micro powder, deionized water, a strong oxidant, a stabilizer and a dispersant; the additive comprises the following components in percentage by weight: 40-69% of graphene, 20-35% of tungsten carbide, 6-15% of silica gel and 6-15% of titanium dioxide, wherein the sum is 100%.
2. The ultra-fast low-loss silicon carbide substrate polishing solution as claimed in claim 1, wherein the additive comprises the following components in percentage by weight: 58% of graphene, 24% of tungsten carbide, 7% of silica gel and 11% of titanium dioxide.
3. The ultra-fast low-loss silicon carbide substrate polishing solution as set forth in claim 1 or 2, further comprising a pH adjusting agent, wherein the pH value of the pH adjusting agent is in the range of 2 to 10.
4. The ultra-fast low-loss silicon carbide substrate polishing solution as claimed in claim 1 or 2, wherein the strong oxidant is hydrogen peroxide or potassium permanganate.
5. The ultra-fast low-loss silicon carbide substrate polishing solution as claimed in claim 1 or 2, wherein the stabilizer is tetraethoxysilane or KH560 or a combination thereof.
6. The ultra-fast low-loss silicon carbide substrate polishing solution as claimed in claim 1 or 2, wherein the dispersant is one or any combination of sodium tripolyphosphate, sodium hexametaphosphate, cetyl trimethyl ammonium bromide, sodium silicate, methyl amyl alcohol, fatty acid polyglycol ester, polyacrylamide and sodium dodecyl sulfate.
7. The ultra-fast low-loss silicon carbide substrate polishing solution as claimed in claim 1 or 2, wherein the particle size of the nano-diamond micro-powder is 0.25 μm to 1.0 μm.
8. The ultra-fast low-loss silicon carbide substrate polishing solution as claimed in claim 1 or 2, wherein the particle size of the additive is 0.1-0.35 μm.
9. The ultra-fast low-loss silicon carbide substrate polishing solution as claimed in claim 1 or 2, wherein the nano-diamond micropowder is spherical cleavable diamond polycrystalline micropowder.
10. The method for preparing an ultrafast low-loss silicon carbide substrate polishing slurry according to claim 1 or 2, comprising the steps of:
1) grinding the components of the additive respectively, taking particles with the particle size of 0.1-0.35 mu m, fully and uniformly mixing graphene, tungsten carbide and titanium dioxide, heating to 30-35 ℃, adding silica gel particles, and continuously mixing and grinding for 30-50min to obtain the additive;
2) mixing deionized water, nano-diamond micro powder, a strong oxidant, a stabilizer and a dispersing agent according to a proportion to prepare polishing base liquid, and heating and insulating the polishing base liquid to keep the temperature of the polishing base liquid at 30-39 ℃;
3) and (3) putting the additive prepared in the step (1) into the polishing base liquid in a heat preservation state, fully mixing and homogenizing to obtain the polishing liquid.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113696092A (en) * | 2021-08-31 | 2021-11-26 | 福建晶安光电有限公司 | Polishing pad for substrate, polishing device and polishing process thereof |
| CN114507478A (en) * | 2022-02-24 | 2022-05-17 | 北京通美晶体技术股份有限公司 | Polishing solution for processing gallium arsenide wafer and preparation method thereof |
| WO2022143718A1 (en) * | 2020-12-30 | 2022-07-07 | 安集微电子科技（上海）股份有限公司 | Chemical-mechanical polishing liquid and method for using same |
| CN115011255A (en) * | 2022-06-27 | 2022-09-06 | 中国地质大学（北京） | High-precision polishing agent of monocrystalline diamond added with nano metal and preparation method thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1312345A (en) * | 2000-02-23 | 2001-09-12 | 不二见美国股份有限公司 | Polishing composition for producing storage hard disc and polishing method thereof |
| CN1673306A (en) * | 2004-03-22 | 2005-09-28 | 花王株式会社 | Polishing composition |
| CN101333417A (en) * | 2007-06-26 | 2008-12-31 | 富士胶片株式会社 | Polishing liquid and polishing method using the same |
| CN103897607A (en) * | 2014-03-25 | 2014-07-02 | 山东天岳晶体材料有限公司 | Mechanical polishing liquid for silicon carbide and mechanical polishing method adopting same |
| CN105647393A (en) * | 2016-02-02 | 2016-06-08 | 北京华进创威电子有限公司 | Polishing solution for silicon carbide wafers |
-
2020
- 2020-02-25 CN CN202010116746.4A patent/CN111303772A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1312345A (en) * | 2000-02-23 | 2001-09-12 | 不二见美国股份有限公司 | Polishing composition for producing storage hard disc and polishing method thereof |
| CN1673306A (en) * | 2004-03-22 | 2005-09-28 | 花王株式会社 | Polishing composition |
| CN101333417A (en) * | 2007-06-26 | 2008-12-31 | 富士胶片株式会社 | Polishing liquid and polishing method using the same |
| CN103897607A (en) * | 2014-03-25 | 2014-07-02 | 山东天岳晶体材料有限公司 | Mechanical polishing liquid for silicon carbide and mechanical polishing method adopting same |
| CN105647393A (en) * | 2016-02-02 | 2016-06-08 | 北京华进创威电子有限公司 | Polishing solution for silicon carbide wafers |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022143718A1 (en) * | 2020-12-30 | 2022-07-07 | 安集微电子科技（上海）股份有限公司 | Chemical-mechanical polishing liquid and method for using same |
| CN113696092A (en) * | 2021-08-31 | 2021-11-26 | 福建晶安光电有限公司 | Polishing pad for substrate, polishing device and polishing process thereof |
| CN114507478A (en) * | 2022-02-24 | 2022-05-17 | 北京通美晶体技术股份有限公司 | Polishing solution for processing gallium arsenide wafer and preparation method thereof |
| CN115011255A (en) * | 2022-06-27 | 2022-09-06 | 中国地质大学（北京） | High-precision polishing agent of monocrystalline diamond added with nano metal and preparation method thereof |
| CN115386298A (en) * | 2022-07-29 | 2022-11-25 | 深圳市永霖科技有限公司 | Silicon carbide chemical mechanical polishing solution based on photocatalysis mechanism |
| CN115975511A (en) * | 2023-02-02 | 2023-04-18 | 张家港安储科技有限公司 | Polishing solution for grinding silicon carbide substrate, polishing solution kit and grinding method |
| CN116875195A (en) * | 2023-07-07 | 2023-10-13 | 深圳市朗纳研磨材料有限公司 | Monocrystalline diamond polishing solution doped with metal nano particles and preparation method thereof |
| CN116875195B (en) * | 2023-07-07 | 2024-02-27 | 深圳市朗纳研磨材料有限公司 | Monocrystalline diamond polishing solution doped with metal nano particles and preparation method thereof |
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