CN111281379A - Method and device for improving attention span through transcranial direct current stimulation - Google Patents

Method and device for improving attention span through transcranial direct current stimulation Download PDF

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CN111281379A
CN111281379A CN202010135934.1A CN202010135934A CN111281379A CN 111281379 A CN111281379 A CN 111281379A CN 202010135934 A CN202010135934 A CN 202010135934A CN 111281379 A CN111281379 A CN 111281379A
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吴方芳
季林红
王建凯
狄雅政
程嘉
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Tsinghua University
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Abstract

The invention discloses a method and a device for improving attention span through transcranial direct current stimulation, wherein the method comprises the following steps: randomly presenting character strings with a plurality of lengths in a designated area of a screen; when the length of the character string is judged by the testee, recording the reaction time and the answer correctness of each question of the testee and collecting the electroencephalogram signal of the testee so as to test the reaction time and the evaluation score, and evaluating the activation condition of the brain during the attention span experiment through the electroencephalogram signal; an electrical stimulator was used to stimulate the lateral dorsal prefrontal cortex on one side with a tDCS anode, while a tDCS cathode was placed on the other side. The method can effectively improve the attention span, can evaluate the improvement effect, and is simple and easy to realize.

Description

Method and device for improving attention span through transcranial direct current stimulation
Technical Field
The invention relates to the technical field of cognition improvement, in particular to a method and a device for improving attention span through transcranial direct current stimulation.
Background
Transcranial direct current stimulation (tDCS) is a non-invasive means of regulating neural activity, by applying a weak current to the scalp, cortical excitability is increased in the area stimulated by the anode electrode, and cortical excitability is decreased in the area stimulated by the cathode. Because the intensity and duration of the tDCS on cortical excitation or inhibition can be effectively controlled by adjusting the current intensity and the stimulus application time, the safety thereof has been proven.
Fregni et al developed a study of the effects of tDCS on cognitive performance in 2005. They placed an anode tDCS electrode in the left dlPFC area to activate the cortex, successfully verified that tDCS has similar effect with the channel magnetic stimulation, and the performance of the tested body in the work memory experiment is improved. Later studies verified the above effects and found that the effects of tDCS on working memory of healthy people can last for more than 30 minutes. In addition, similar cognitive enhancement effects were also verified in patient experiments.
In 2012, Gladwin et al used the Sternberg paradigm to study the effects of tDCS on working memory, and they found that the performance of the test was significantly improved only when the interference parameters were added by adjusting the interference parameters in the Sternberg paradigm. Therefore, they concluded that applying the anode tDCS at the left side dlPFC had an improved effect on selective attention. And then other research teams adopt rIPS as a tDCS experiment of the stimulation position, and the effectiveness of the tDCS in improving the selective attention is verified again. Additional experiments demonstrated that tDCS can increase attention at different levels. Also in the tDCS study of left dlPFC anode electrode placement, Kang et al indicated that this approach could improve the patient attention deficit after stroke, showing that tDCS technology has application value in clinical rehabilitation training. Nelson et al, using the same tDCS stimulation site, found an enhanced effect on sustained attention, namely alertness (Vigilance). In this experiment, 19 military subjects were divided into 2 groups, and the pseudo-stimulus group was tested to have less sustained attention than the experimental group. The results are shown in fewer targets that can be detected, longer response times, and slower cerebral hemisphere blood flow rates.
Attention consists of several dimensional capabilities, either selective attention or sustained attention as mentioned above. the attention-improving effect of tDCS is verified many times, and therefore, the embodiment of the invention discusses the attention-improving effect of tDCS in other attention dimensions. Attention Span (Visual Attention Span) is defined as the number of Visual elements that a subject's awareness can clearly grasp and process at the same time. The study results of 23 table tennis athletes, 14 fixed target shooting athletes, 17 moving target shooting athletes and 80 common sports college students by plum Yongrui et al show that the attention span of three groups of athletes is significantly higher than that of the common sports college students. The team of sylvia Valdois, in numerous studies, proposed that the lack of attention span is closely related to Dyslexia (Dyslexia). Therefore, the attention span is improved, and the method has certain application value in the aspects of physical training, clinical treatment and the like.
Since 2000, the research on tDCS has grown rapidly, and many of them have questioned the reliability of the research because of poor control parameters and design experiments, which reduces the comparability between experiments. To increase the reliability and comparability of the experiment, the accuracy and the response time are recorded when the subject performs the attention task. The time interval of each subject receiving different tDCS stimulation is more than 48 hours, so that the cumulative effect of cortical excitation is avoided. The experimental order of the two stimulation groups and the control group was randomized to exclude the effect of exercise. The experiments used in-test design to reduce the impact of individual variation. However, in the previous research, the experimental result is determined only according to the improvement of the tDCS stimulation on the cognitive task performance, and the neural mechanism is not discussed.
Disclosure of Invention
The present invention is directed to solving, at least to some extent, one of the technical problems in the related art.
Therefore, one objective of the present invention is to provide a method for improving attention span by transcranial direct current stimulation, which can effectively improve attention span and evaluate the improvement effect, and is simple and easy to implement.
Another objective of the present invention is to provide a device for improving attention span by transcranial direct current stimulation.
In order to achieve the above object, an embodiment of an aspect of the present invention provides a method for improving attention span by transcranial direct current stimulation, including the following steps: randomly presenting character strings with a plurality of lengths in a designated area of a screen; when the length of the character string is judged by a testee, recording the reaction time and the answer positive error of each question of the testee, collecting the electroencephalogram signal of the testee so as to test the reaction time and the evaluation score, and evaluating the activation condition of the brain during the attention span experiment through the electroencephalogram signal; an electrical stimulator was used to stimulate the lateral dorsal prefrontal cortex on one side with a tDCS anode, while a tDCS cathode was placed on the other side.
According to the method for improving the attention span through transcranial direct current stimulation, provided by the embodiment of the invention, the attention span improvement effect is evaluated by applying the anode and the cathode tDCS to the dlPFC area, the electroencephalogram signal is analyzed to discuss the nerve regulation mechanism of the electroencephalogram signal, the tDCS is verified to be capable of effectively improving the attention span and show that the nerve mechanism of the tDCS is related to the change of Alpha power before stimulation, so that the attention span is effectively improved, the improvement effect is evaluated, and the method is simple and easy to implement.
In addition, the method for improving attention span by transcranial direct current stimulation according to the above embodiment of the invention may further have the following additional technical features:
further, in one embodiment of the invention, the character string is formed by randomly combining the numbers 0-9 and the letters A-Z.
Further, in an embodiment of the present invention, the stimulating one dorsal lateral prefrontal cortex with the tDCS anode electrode, and the placing the tDCS cathode electrode on the other side specifically include: the electrode slice with the preset size passes through the current with the preset current intensity for the preset time, the anode of the anode stimulation group is placed in the F3 area, the cathode of the anode stimulation group is placed in the F4 area, the anode of the cathode stimulation group is placed in the F4 area, and the cathode of the anode stimulation group is placed in the F3 area, wherein the F3 area is the left-side frontal lobe and back outer area, and the F4 area is the right-side frontal lobe and back outer area.
Alternatively, in an embodiment of the present invention, the preset magnitude may be 5cm × 6cm, the preset current intensity may be 1mA, and the duration may be 20 minutes.
Further, in one embodiment of the present invention, the pseudo stimulation set parameters were ramped from 0 to 1mA over 1 minute, followed by a 1 minute ramp down to 0 current, followed by a 18 minute wait before removing the electrode pad.
In order to achieve the above object, another embodiment of the present invention provides an apparatus for enhancing attention span by transcranial direct current stimulation, including: the display module is used for randomly displaying character strings with a plurality of lengths in a designated area of a screen; the evaluation module is used for recording the reaction time and the answer mismatching of each question of the testee and collecting the electroencephalogram signal to test the reaction time and the evaluation score when the testee judges the length of the character string, and evaluating the activation condition of the brain during the attention span experiment through the electroencephalogram signal; and the stimulation lifting module is used for adopting an electrical stimulator to stimulate the lateral dorsal forehead cortex on one side by using a tDCS anode electrode, and meanwhile, a tDCS cathode electrode is placed on the other side.
The device for improving the attention span through transcranial direct current stimulation evaluates the attention span improvement effect by applying the anode and the cathode tDCS to the dlPFC area, analyzes the electroencephalogram signal to discuss the nerve regulation mechanism, verifies that the tDCS can effectively improve the attention span, and shows that the nerve mechanism is related to the change of Alpha power before stimulation, thereby effectively improving the attention span, evaluating the improvement effect and being simple and easy to realize.
In addition, the device for improving attention span by transcranial direct current stimulation according to the above embodiment of the invention may further have the following additional technical features:
further, in one embodiment of the invention, the character string is formed by randomly combining the numbers 0-9 and the letters A-Z.
Further, in an embodiment of the present invention, the stimulation lift module specifically includes: the electrode slice with the preset size passes through the current with the preset current intensity for the preset time, the anode of the anode stimulation group is placed in the F3 area, the cathode of the anode stimulation group is placed in the F4 area, the anode of the cathode stimulation group is placed in the F4 area, and the cathode of the anode stimulation group is placed in the F3 area, wherein the F3 area is the left-side frontal lobe and back outer area, and the F4 area is the right-side frontal lobe and back outer area.
Optionally, in an embodiment of the present invention, the preset magnitude may be 5cm × 6cm, the preset current intensity may be 1mA, and the preset duration may be 20 minutes.
Further, in one embodiment of the present invention, the pseudo stimulation set parameters were ramped from 0 to 1mA over 1 minute, followed by a 1 minute ramp down to 0 current, followed by a 18 minute wait before removing the electrode pad.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
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The foregoing and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a flow chart of a method of enhancing attention span via transcranial direct current stimulation according to an embodiment of the invention;
FIG. 2 is an illustration of an experimental paradigm of attention span according to an embodiment of the present invention;
FIG. 3 is an experimental graph of transcranial direct current stimulation according to an embodiment of the invention;
FIG. 4 is a reference graph of attention span calculations according to an embodiment of the present invention;
FIG. 5 is a graph of attention span change after anodal and cathodal stimulation according to an embodiment of the present invention;
FIG. 6 is a pre-stimulation Alpha wave power brain topographic map according to an embodiment of the present invention;
FIG. 7 is a graph of Alpha wave power as a function of difficulty under different stimulation conditions, according to an embodiment of the present invention;
FIG. 8 is a graph of Alpha wave power saliency map under cathodic and anodic stimulation of varying difficulty in accordance with an embodiment of the present invention;
fig. 9 is a schematic structural diagram of a device for improving attention span by transcranial direct current stimulation according to an embodiment of the invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
The method and the device for improving the attention span by transcranial direct current stimulation according to the embodiment of the invention are described below with reference to the accompanying drawings, and firstly, the method for improving the attention span by transcranial direct current stimulation according to the embodiment of the invention will be described with reference to the accompanying drawings.
Fig. 1 is a flow chart of a method for enhancing attention span by transcranial direct current stimulation according to an embodiment of the invention.
As shown in fig. 1, the method for improving attention span by transcranial direct current stimulation comprises the following steps:
in step S101, a character string of several lengths is randomly presented in a screen designation area.
It is understood that attention span refers to the number and objects that a subject can realize clearly holding at the same time; the attention span experimental paradigm is that a character string with a plurality of lengths is randomly presented in a designated area of a white screen of a computer, and the length of the character string is judged by a test. In one embodiment of the present invention, the character string is formed by randomly combining numbers 0 to 9 and letters A to Z, as shown in FIG. 2.
In step S102, when the subject determines the length of the character string, the response time and the answer correctness of each question of the subject are recorded and the electroencephalogram signal to be tested is collected to test the response time and the evaluation score, and the activation condition of the brain during the attention span experiment is evaluated through the electroencephalogram signal.
It can be understood that the experimental process records the reaction time and answer of each tested subject and collects the tested brain electrical signals. And on one hand, the attention span evaluation is carried out through the reaction time and score of the tested attention span experiment, and in addition, the brain activation condition is evaluated through the brain electrical signal evaluation during the attention span experiment.
In step S103, an electrical stimulator is used to stimulate one dorsal lateral prefrontal cortex using the tDCS anode electrode, while the tDCS cathode electrode is placed on the other side.
It is understood that transcranial direct current stimulation boosting may be achieved using a neroConn DC-stimula MC electrical STIMULATOR (as shown in fig. 3) using tDCS anode electrode to stimulate one side of the dorsolateral prefrontal cortex (dlPFC), while the cathode electrode is placed on the other side.
Further, in an embodiment of the present invention, the tDCS anode electrode is used to stimulate one side of the dorsal lateral prefrontal cortex, and meanwhile, the tDCS cathode electrode is placed on the other side, which specifically includes: the electrode sheet is set to a predetermined size to pass a current of a predetermined current intensity for a predetermined time, and the anodal stimulation group places the anode at region F3 and the cathode at region F4, and the cathodal stimulation group places the anode at region F4 and the cathode at region F3. The preset size can be 5cm × 6cm, the preset current intensity can be 1mA, and the duration time can be 20 minutes. The pseudo-stimulation group parameters were ramped from 0 to 1mA over 1 minute, followed by a 1 minute further decrease to a current of 0, followed by a 18 minute wait before removing the electrode patch, where region F3 is the left lateral frontal lobe dorsum region and region F4 is the right lateral frontal lobe dorsum region.
Specifically, the electrode sheet was 5cm × 6cm. with a current intensity of 1mA and a duration of 20 minutes. The anodal stimulation group placed the anode in region F3 and the cathode in region F4. The cathodal stimulation group placed the anode in zone F4 and the cathode in zone F3. The pseudo stimulation group parameters were a slow increase from 0 to 1mA over 1 minute, followed by a 1 minute decrease to 0 current, followed by a 18 minute wait before removing the electrode pad. The experiment was performed in three groups, anodal stimulation, cathodal stimulation and pseudo stimulation. Experimental results prove that tDCS can effectively improve the attention span and indicate that the neural mechanism of tDCS is related to the change of Alpha power before stimulation.
The method for improving the attention span by transcranial direct current stimulation is described in detail by the following specific examples, and the specific experimental scheme and the evaluation method are as follows:
1. attention span experimental design
The visual elements in the attention span are represented by the characters of character strings, in the attention span task, the character strings are displayed on a calculator screen, the character strings are randomly composed of numbers 0-9, capital letters A-Z and lowercase letters a-Z, and white backgrounds and black fonts are used. The tested character string needs to be determined to contain the number of characters. The difficulty N (the number of character strings) in this experiment is set to 3 to 9, and as the number N of character strings increases, the difficulty also increases. In the difficulty level N, three character strings of the number of characters, including N, N-1 and N +1, appear with probabilities of 50%, 25% and 25%, respectively. The subject judges whether the number of characters of the character string appearing is N, and presses the 'J' key with the right hand to indicate 'yes' or presses the 'F' key with the left hand to indicate 'no'.
Experimental flow As shown in FIG. 2, each test question begins by presenting a fixed cross for 2000ms, then a string for 100ms, and then a second fixed cross to indicate that the test is answered. If a participant does not answer within the 1000ms limit, it is deemed to have given a wrong answer. I.e., a topic test time of 2100ms, and a topic interval of 3000ms, cycle 30 times at each difficulty. At the end of each difficulty level, the participant may decide to enter the rest period before the next difficulty. And recording the response record and the reaction time of the tested object in the process of the test task.
32 brain electrical signals are simultaneously collected in the experimental process.
2. Electroencephalogram acquisition and analysis
The EEG signal can be acquired by Eego produced by ANTTMmylab 64neurone eeg recording analysis system. This experiment collected 32-lead EEG data with a sample rate of 1000 Hz. Synchronously acquiring electroencephalogram signals when the tested attention span task is tested. Electrode placement position baseIn the international 10-20 system shown in fig. 3, the ground electrode potential is AFz and the online reference electrode is Cpz. All electrode impedances remain below 5k omega.
3. Attention span analysis
The accuracy under seven difficulties is calculated by the recorded answering records of each testee, and a linear regression is performed corresponding to the number of characters of the character string under each difficulty. The 90% accuracy is taken as the baseline, and the number of the corresponding character elements is the attention span evaluation index of the subject. The calculation is shown in fig. 4, where the data points are all persons.
The attention span of the anodal stimulation group, cathodal stimulation group and pseudo stimulation control group were calculated respectively. The attention span of the anodal stimulation group is 5.3 +/-0.66 on average; the attention span of the cathodal stimulation group was 4.7 ± 0.67 on average; the attention span of the control group averaged 5.0. + -. 0.49. Each individual anodal and cathodal stimulation groups were paired with control groups for T-test. The attention span of the anodal stimulation group is significantly increased and has a significant difference (p is 0.0347), while the attention span of the cathodal stimulation group is in a trend of being significantly decreased (p is 0.0294). To show the change in attention span after stimulation, the change amount distribution was obtained by subtracting the attention span of each individual under anodal stimulation from the attention span under pseudo stimulation, and is plotted in the right-hand box of fig. 5. The same procedure was performed for the attention span of each individual under cathodal stimulation to obtain the variation distribution, which is plotted on the left side of fig. 5.
4. Electroencephalogram signal analysis
Data of a time period of 1600-2000 ms are taken, all the lead Alpha wave power is calculated, and a brain topographic map can be obtained as shown in fig. 6. In the preparation state before stimulation, the frontal lobe (Fp1, Fpz, Fp2), temporal lobe (T7, T8) and occipital lobe (O1, O2) all showed higher Alpha wave power, with the highest occipital lobe power. The motor sensation zone (C3, C4) has a lower Alpha wave power.
It can be seen by calculating the pre-stimulation Alpha wave power that the power of the anodal stimulation group is lower than that of the pseudo stimulation group. For example, using the lead positions of F7 and P7, the variation of the power of the pre-stimulation Alpha wave with difficulty under the condition of electrical stimulation is shown in fig. 7. It is shown that Alpha wave power increases with increasing difficulty before stimulation, but is lower after receiving anodal stimulation. When the length of the attention span task character string received by the test is 3-5, the Alpha wave power reduction before stimulation is more obvious. There was no significant drop in the cathodal stimulation group.
In order to analyze the significant change situation of the Alpha wave power on the brain area before stimulation under different attention span test difficulties after tDCS in detail, the embodiment of the invention performs the Alpha wave power pairing T test of the experimental group and the control group in sequence on each difficulty and each lead position, and the confidence probability is set to be 95%. The distribution brain topography of the pre-stimulation Alpha wave rate significantly decreased under cathodal and anodal stimulation conditions is shown in fig. 8. At a character width of 3, the anode stimulation group showed a significant drop in Fz7, Fz, T7, P3; the cathodal stimulation then showed a significant drop at C4. At a character width of 4, the anode stimulation group showed significant decrease in F7, F3, Fz, F4, FC5, FC2, FC6, T7, C3, CP5, CP1, CP2, P7, P3, Pz; there was a significant drop in the cathodal stimulation at CP 6. When the character width is 5, the anode stimulation group has significant decline at F7, F3, FC5, FC6, T7, C3, C4, CP1, CP2, P7, P3, Pz and P4; no significant difference in cathodal stimulation occurred. When the character width is 6, there is no significant difference between the two groups. When the character width is 7, the anode stimulation group is significantly reduced at P7; a significant drop in cathodal stimulation occurred at F3. When the character width is 8, there is no significant difference between the two groups. When the character width is 9, the anode stimulation group is significantly reduced at F4, FC6, CP 1; the cathodal stimulation showed a significant drop at FC5, C4, O2. The location of the lead where a significant dip occurs is labeled-1 and the points without significance are labeled 0, from which a brain map is drawn, see fig. 8.
The embodiment of the invention provides that the transcranial direct current stimulation can improve the attention span, and the effect is verified through experiments. The results show that anodal stimulation at the F3 site can significantly improve the attention span of the subject, and cathodal stimulation reduces the attention span.
In summary, the embodiment of the present invention evaluates the attention span improvement effect by applying the anode and the cathode tDCS in the dlPFC region, and analyzes the electroencephalogram signal to discuss the neural regulation mechanism. Healthy subjects were recruited in the experiment, each subject participated in three experiments, respectively anodal stimulation, cathodal stimulation and pseudo stimulation, and the experiment sequence was randomly assigned. The embodiment of the invention assumes that the tDCS can have the effect similar to other attention dimensions in the aspect of improving the attention width dimension. At the same time, corresponding changes can be seen on the neuroelectrical signal. Experimental results prove that tDCS can effectively improve the attention span and indicate that the neural mechanism of tDCS is related to the change of Alpha power before stimulation.
According to the method for improving the attention span through transcranial direct current stimulation, provided by the embodiment of the invention, the effect of improving the attention span is evaluated by applying the anode and the cathode tDCS to the dlPFC area, the electroencephalogram signal is analyzed to discuss the nerve regulation mechanism of the electroencephalogram signal, the tDCS is verified to be capable of effectively improving the attention span and show that the nerve mechanism of the tDCS is related to the change of Alpha power before stimulation, so that the attention span is effectively improved, the improvement effect is evaluated, and the method is simple and easy to implement.
Next, a device for improving attention span by transcranial direct current stimulation according to an embodiment of the invention will be described with reference to the drawings.
Fig. 9 is a schematic structural diagram of a device for improving attention span by transcranial direct current stimulation according to an embodiment of the invention.
As shown in fig. 9, the apparatus 10 for improving attention span by transcranial direct current stimulation comprises: a presentation module 100, an evaluation module 200, and a stimulus boost module 300.
The presentation module 100 is configured to randomly present a character string with a plurality of lengths in a designated area of a screen; the evaluation module 200 is used for recording the response time and the answer correctness of each question of the testee and collecting the electroencephalogram signal to test the response time and the evaluation score when the testee judges the length of the character string, and evaluating the activation condition of the brain during the attention span experiment through the electroencephalogram signal; the stimulation lifting module 300 is used for adopting an electrical stimulator to stimulate the lateral dorsal prefrontal cortex on one side by using a tDCS anode electrode, and meanwhile, a tDCS cathode electrode is placed on the other side. The device 10 of the embodiment of the invention can effectively improve the attention span and evaluate the improvement effect, and is simple and easy to realize.
Further, in one embodiment of the present invention, the character string is a random combination of the numbers 0-9 and the letters A-Z.
Further, in an embodiment of the present invention, the stimulation lift module 300 specifically includes: the electrode slice with the preset size passes through the current with the preset current intensity for the preset time, the anode of the anode stimulation group is placed in a F3 area, the cathode of the anode stimulation group is placed in a F4 area, the anode of the cathode stimulation group is placed in a F4 area, and the cathode of the cathode stimulation group is placed in a F3 area, wherein the F3 area is a left frontal lobe dorsum outer area, and the F4 area is a right frontal lobe dorsum outer area.
Alternatively, in an embodiment of the present invention, wherein the preset magnitude may be 5cm × 6cm, the preset current intensity may be 1mA, and the preset time may be 20 minutes.
Further, in one embodiment of the present invention, the pseudo stimulation set parameters were ramped from 0 to 1mA over 1 minute, followed by a 1 minute ramp down to 0 current, followed by a 18 minute wait before removing the electrode pad.
It should be noted that the foregoing explanation of the embodiment of the method for enhancing attention span by transcranial direct current stimulation is also applicable to the apparatus for enhancing attention span by transcranial direct current stimulation in this embodiment, and is not repeated herein.
According to the device for improving the attention span through transcranial direct current stimulation, which is provided by the embodiment of the invention, the attention span improvement effect is evaluated by applying the anode and the cathode tDCS to the dlPFC area, the electroencephalogram signal is analyzed to discuss the nerve regulation mechanism of the electroencephalogram signal, the tDCS is verified to be capable of effectively improving the attention span and show that the nerve mechanism of the tDCS is related to the change of Alpha power before stimulation, so that the attention span is effectively improved, the improvement effect is evaluated, and the device is simple and easy to implement.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.

Claims (10)

1. A method for improving attention span by transcranial direct current stimulation is characterized by comprising the following steps:
randomly presenting character strings with a plurality of lengths in a designated area of a screen;
when the length of the character string is judged by a testee, recording the reaction time and the answer positive error of each question of the testee, collecting the electroencephalogram signal of the testee so as to test the reaction time and the evaluation score, and evaluating the activation condition of the brain during the attention span experiment through the electroencephalogram signal; and
an electrical stimulator was used to stimulate the lateral dorsal prefrontal cortex on one side with a tDCS anode, while a tDCS cathode was placed on the other side.
2. The method of claim 1, wherein the string of characters is a random combination of numbers 0-9 and letters a-Z.
3. The method of claim 1, wherein stimulating one dorsal lateral prefrontal cortex with the tDCS anode electrode while placing the tDCS cathode electrode on the other side comprises:
the electrode slice with the preset size passes through the current with the preset current intensity for the preset time, the anode of the anode stimulation group is placed in the F3 area, the cathode of the anode stimulation group is placed in the F4 area, the anode of the cathode stimulation group is placed in the F4 area, and the cathode of the anode stimulation group is placed in the F3 area, wherein the F3 area is the left-side frontal lobe and back outer area, and the F4 area is the right-side frontal lobe and back outer area.
4. The method according to claim 3, wherein the preset magnitude is 5cm x 6cm, the preset current intensity is 1mA, and the preset duration is 20 minutes.
5. The method of claim 3, wherein the pseudo-stimulation set parameters are ramped from 0 to 1mA over 1 minute, followed by a 1 minute ramp to 0 current, followed by a 18 minute wait before removing the electrode pad.
6. A device for enhancing attention span via transcranial direct current stimulation, comprising:
the display module is used for randomly displaying character strings with a plurality of lengths in a designated area of a screen;
the evaluation module is used for recording the reaction time and the answer mismatching of each question of the testee and collecting the electroencephalogram signal to test the reaction time and the evaluation score when the testee judges the length of the character string, and evaluating the activation condition of the brain during the attention span experiment through the electroencephalogram signal; and
and the stimulation lifting module is used for adopting an electrical stimulator to stimulate the lateral dorsal forehead cortex on one side by using a tDCS anode electrode, and meanwhile, a tDCS cathode electrode is placed on the other side.
7. The device of claim 6, wherein the character string is randomly combined by numbers 0-9 and letters A-Z.
8. The device according to claim 6, wherein the stimulation boost module comprises in particular:
the electrode slice with the preset size passes through the current with the preset current intensity for the preset time, the anode of the anode stimulation group is placed in the F3 area, the cathode of the anode stimulation group is placed in the F4 area, the anode of the cathode stimulation group is placed in the F4 area, and the cathode of the anode stimulation group is placed in the F3 area, wherein the F3 area is the left-side frontal lobe and back outer area, and the F4 area is the right-side frontal lobe and back outer area.
9. The device according to claim 8, wherein the preset magnitude is 5cm x 6cm, the preset current intensity is 1mA, and the preset duration is 20 minutes.
10. The device of claim 3, wherein the pseudo-stimulation set parameters are ramped from 0 to 1mA over 1 minute, followed by a 1 minute ramp to 0 current, followed by a 18 minute wait before removing the electrode pad.
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