CN111279503A - 用于压力传感器的电子装置 - Google Patents

用于压力传感器的电子装置 Download PDF

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CN111279503A
CN111279503A CN201880069986.4A CN201880069986A CN111279503A CN 111279503 A CN111279503 A CN 111279503A CN 201880069986 A CN201880069986 A CN 201880069986A CN 111279503 A CN111279503 A CN 111279503A
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gate
conductor
transistor
pixel
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J·哈丁
S·马卡姆
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FlexEnable Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0058—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of pressure sensitive conductive solid or liquid material, e.g. carbon granules
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/04—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of resistance-strain gauges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0098—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means using semiconductor body comprising at least one PN junction as detecting element
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0414—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using force sensing means to determine a position
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress

Abstract

一种装置，其包括：限定晶体管阵列的层堆叠，其中所述层堆叠包含表面导体图案，所述表面导体图案限定(i)栅极导体阵列，每个栅极导体提供用于相应列晶体管的栅极电极，以及(ii)像素导体阵列，每个像素导体与相应晶体管相关联，并且经由所述相应晶体管的半导体沟道连接到行导体阵列中的一个，每一行导体与相应行的晶体管相关联；其中每个栅极导体被配置为基本上完全围绕与所述栅极导体相关联的所述相应列晶体管的所述像素导体延伸。

Description

用于压力传感器的电子装置
背景技术
一些压力传感器利用电阻器材料的导电性的压力相关性。
用于例如映射区域上压力变化的传感器阵列可以包括有源矩阵背板，所述有源矩阵背板包含晶体管阵列，每个晶体管与栅极线和读取线的唯一组合相关联，其中与压敏电阻器材料膜电接触的表面导体图案限定栅极导体阵列以及每个晶体管的像素导体。每个晶体管的每个像素导体经由所述晶体管的半导体沟道在层堆叠内连接到读取线阵列中的一个。
将压敏电阻器材料的膜图案化成岛或单元是用于改进这种压力传感器阵列的输出的一种技术，但是本申请的发明人已经认识到在不对压敏电阻器材料进行图案化的情况下改进输出是存在挑战的。
发明内容
因此，提供了一种装置，其包括：限定晶体管阵列的层堆叠，其中所述层堆叠包含表面导体图案，所述表面导体图案限定(i)栅极导体阵列，每个栅极导体提供用于相应列晶体管的栅极电极，以及(ii)像素导体阵列，每个像素导体与相应晶体管相关联，并且经由所述相应晶体管的半导体沟道连接到行导体阵列中的一个，每一行导体与相应行的晶体管相关联；其中每个栅极导体被配置为基本上完全围绕与所述栅极导体相关联的所述相应列晶体管的所述像素导体延伸。
根据一个实施例，每个栅极导体基本上完全围绕与所述栅极导体相关联的所述相应列晶体管的所有所述像素导体中的每个单独像素导体延伸。
因此，还提供了一种压力传感器，其包括如上所述的装置和与所述表面导体图案电接触的压敏电阻器材料膜，其中所述压敏材料表现出与压力有关的导电性。
附图说明
在下文中仅以示例的方式并参考附图描述本发明的实施例，附图中：
图1是根据本发明示例实施例的压力传感器装置的一部分的元件配置的横截面图示；以及
图2是根据示例实施例的用于压力传感器装置的背板的表面和下层导体图案的示例配置的平面图示。
具体实施方式
根据本发明实施例的压力传感器装置包括与背板的表面导体图案电接触的压敏电阻器材料2的膜，压敏电阻器材料例如是电阻弹性体(例如碳掺杂的橡胶，其材料密度和导电性随所施加的压力的变化而变化)，所述背板包括支撑在例如塑料支撑膜4上并限定晶体管的有源矩阵阵列的层堆叠。
在此示例实施例中，晶体管的有源矩阵阵列包括用于控制部件的有机晶体管装置的阵列(例如有机薄膜晶体管(OTFT)装置的阵列)。OTFT包括用于半导体沟道的有机半导体(例如，有机聚合物或小分子半导体)。
表面导体图案包括栅极线6的阵列，每条栅极线为晶体管阵列中的相应列晶体管提供栅极电极。表面导体图案还包括像素导体8的阵列，每个像素导体与晶体管阵列的相应晶体管相关联。在表面导体图案中，像素导体8彼此分离，并且与栅极导体6分离。
每个像素导体8经由绝缘体12中的通孔10(图2中的虚线所示)并经由相应晶体管的半导体沟道14连接到由堆叠下层处的另一导体图案(图2中的虚线所示)限定的读取线16的阵列中的一个。读取线阵列中的每个读取线16与相应行晶体管相关联，由此，每个晶体管(以及每个像素导体8)与栅极线和读取线的唯一组合相关联。
出于本专利申请的目的，术语行和列不指示任何特定的绝对方向，而是指示相对于彼此基本上正交的任何一对方向。
每个栅极线6延伸到晶体管阵列的边缘以用于连接到栅极驱动器芯片的相应端子，并且每个读取线16延伸到晶体管阵列的边缘以用于连接到读取线驱动器芯片的相应端子。栅极驱动器芯片和读取线驱动器芯片可以是分开的芯片，或者可以组合成单个芯片。
每个栅极线6被配置为围绕与栅极线6相关联的晶体管的所有像素导体8延伸。在图2所示的示例中，每个栅极线6还被配置为围绕与栅极线6相关联的所述列晶体管的一组像素导体8内的每个像素导体8单独地延伸。
在操作中，栅极驱动器芯片顺序地向栅极线6施加“导通”电压，并且当“导通”电压顺序地施加到栅极线6时，读取线芯片处理读取线16处的电响应。
更详细地，栅极驱动器芯片被配置为根据预定时序图案向其端子中的每一个输出“导通”电压(例如，对于p型半导体的示例，相对较大的负电压(例如，-15V))，同时在其余输出端子(即，除在任何时刻“导通”的一个端子之外的所有输出端子)输出“断开”电压(例如0V)。
压敏电阻器材料2的未图案化膜不可避免地在栅极线6之间提供不可忽略的电流路径，由此向一个栅极线6施加“导通”电压会不可避免地导致相邻栅极线6的电位变化。栅极线6之间的这种串扰可能导致相邻列晶体管(即与相邻栅极线相关联的晶体管列)至少部分地同时导通(即，超过一列晶体管同时导通)。
然而，栅极线6的上述配置被设计为使对相邻列像素导体/晶体管的读取线电流的影响最小化，所述影响可能由于上述效果而无意地“导通”。每个栅极线6完全围绕相应列像素导体8(与栅极线6相关联的晶体管列的像素导体8)的延伸具有这样的效果：即有意地“导通的”栅极线6(即，连接到“导通的”栅极驱动器芯片端子的栅极线6)和与相邻栅极线6相关联的像素导体8的所有部分之间的电位差小于有意地“导通的”栅极线6和相邻栅极线6之间的电位差。因此，减少了与任何相邻栅极线相关联的像素导体8对读取线16中的电流的影响。
此外，每个栅极线6围绕与栅极线6相关联的晶体管的每个单独的像素导体8的延伸具有这样的附加效果：使一行中的一个像素导体的区域中的压敏电阻器膜2的电阻变化对相邻行的读取线电流的影响最小化。
在一个示例实施例中，支撑衬底可以包括塑料膜，半导体沟道14可以包括有机半导体，例如有机聚合物半导体，绝缘体12可以包括一种或多种有机聚合物材料，并且导体表面和下层图案中的每一个可以由金属/合金层或金属/合金层的堆叠形成。层堆叠可以包括另外的层，例如有机材料层，以促进电荷载流子在导体图案和有机半导体之间的转移。
除了上文明确提及的任何修改之外，本领域技术人员还将清楚，可以在本发明的范围内对描述的实施例进行各种其它修改。
申请人在此单独公开本文描述的每一个体特征及两个或更多个此类特征的任意组合，以本领域技术人员的普通知识，能够总体上基于本说明书实行此类特征或组合，而不考虑此类特征或特征的组合是否能解决本文所公开的任何问题；且不对权利要求书的范围造成限制。申请人指示本发明的各方面可以由任何此类个别特征或特征的组合组成。

Claims (3)

1.一种装置，其包括：限定晶体管阵列的层堆叠，其中所述层堆叠包含表面导体图案，所述表面导体图案限定(i)栅极导体阵列，每个栅极导体提供用于相应列晶体管的栅极电极，以及(ii)像素导体阵列，每个像素导体与相应晶体管相关联，并且经由所述相应晶体管的半导体沟道连接到行导体阵列中的一个，每一行导体与相应行的晶体管相关联；其中每个栅极导体被配置为基本上完全围绕与所述栅极导体相关联的所述相应列晶体管的所述像素导体延伸。
2.根据权利要求1所述的装置，其中每个栅极导体基本上完全围绕与所述栅极导体相关联的所述相应列晶体管的所有所述像素导体中的每个单独像素导体延伸。
3.一种压力传感器，其包括根据权利要求1或权利要求2所述的装置，以及与所述表面导体图案电接触的压敏电阻器材料膜，其中所述压敏材料表现出与压力有关的导电性。
CN201880069986.4A 2017-10-27 2018-10-22 用于压力传感器的电子装置 Pending CN111279503A (zh)

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GB1717715.5A GB2567871B (en) 2017-10-27 2017-10-27 Electronic device for pressure sensors
PCT/EP2018/078909 WO2019081436A1 (en) 2017-10-27 2018-10-22 ELECTRONIC DEVICE FOR PRESSURE SENSORS

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5852482A (en) * 1995-08-23 1998-12-22 Samsung Electronics Co., Ltd. TFT array of liquid crystal display where dataline and source electrode projecting therefrom cross gate lines at only two points and repair method thereof
US20060262099A1 (en) * 2003-08-23 2006-11-23 Destura Galileo J A Touch-input active matrix display device
GB201020049D0 (en) * 2010-11-26 2011-01-12 Plastic Logic Ltd Electronic devices
JP2012119532A (ja) * 2010-12-01 2012-06-21 Seiko Epson Corp 薄膜トランジスタ形成用基板、半導体装置、電気装置
CN105705990A (zh) * 2013-10-08 2016-06-22 弗莱克因艾伯勒有限公司 包含有机材料的电子装置
CN105874625A (zh) * 2013-12-10 2016-08-17 弗莱克因艾伯勒有限公司 降低晶体管装置中不想要的电容耦合
WO2017001473A1 (en) * 2015-06-29 2017-01-05 Flexenable Limited Organic electronic/optoelectronic devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130020573A1 (en) * 2010-03-29 2013-01-24 Keiichi Fukuyama Pressure detecting device and method for manufacturing the same, display device and method for manufacturing the same, and tft substrate with pressure detecting device
GB2519084A (en) * 2013-10-08 2015-04-15 Plastic Logic Ltd Transistor addressing
CN204314581U (zh) * 2015-01-08 2015-05-06 京东方科技集团股份有限公司 一种阵列基板、显示面板和显示装置
KR102378222B1 (ko) * 2015-05-22 2022-03-25 삼성디스플레이 주식회사 표시 장치

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5852482A (en) * 1995-08-23 1998-12-22 Samsung Electronics Co., Ltd. TFT array of liquid crystal display where dataline and source electrode projecting therefrom cross gate lines at only two points and repair method thereof
US20060262099A1 (en) * 2003-08-23 2006-11-23 Destura Galileo J A Touch-input active matrix display device
GB201020049D0 (en) * 2010-11-26 2011-01-12 Plastic Logic Ltd Electronic devices
JP2012119532A (ja) * 2010-12-01 2012-06-21 Seiko Epson Corp 薄膜トランジスタ形成用基板、半導体装置、電気装置
CN105705990A (zh) * 2013-10-08 2016-06-22 弗莱克因艾伯勒有限公司 包含有机材料的电子装置
CN105874625A (zh) * 2013-12-10 2016-08-17 弗莱克因艾伯勒有限公司 降低晶体管装置中不想要的电容耦合
WO2017001473A1 (en) * 2015-06-29 2017-01-05 Flexenable Limited Organic electronic/optoelectronic devices

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GB2567871A (en) 2019-05-01

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