CN111261506A - Semiconductor device photochemical etching method and device - Google Patents
Semiconductor device photochemical etching method and device Download PDFInfo
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- CN111261506A CN111261506A CN201811459406.0A CN201811459406A CN111261506A CN 111261506 A CN111261506 A CN 111261506A CN 201811459406 A CN201811459406 A CN 201811459406A CN 111261506 A CN111261506 A CN 111261506A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30617—Anisotropic liquid etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Abstract
The invention relates to a semiconductor device photochemical etching method, which comprises the following steps: s1, chemically etching the surface to be etched of the semiconductor structure with the mask layer for a first preset time period to obtain a pre-etched semiconductor structure; s2, generating an electric field in the to-be-etched area of the pre-etched semiconductor structure by using illumination to etch the to-be-etched area deeply, and obtaining the semiconductor device with the preset depth-to-width ratio. According to the method, the semiconductor structure is pre-etched before deep etching, after the pre-etched etch pit is obtained, illumination is assisted, the capture of photo-generated carriers and the distribution of the photo-generated carriers are utilized to control the etching directionality and improve the etching precision, the wet chemical etching directionality is improved, and the morphology with a larger depth-to-width ratio can be obtained.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a semiconductor device photochemical etching method and device.
Background
At present, in the manufacturing process of III-V compound semiconductor devices, MOCVD (Metal-organic Chemical Vapor Deposition) is mostly used to grow epitaxial layers on a standard-sized substrate, and wet or dry etching processes are often used to subsequently draw the structure morphology or divide the device into a plurality of devices.
Among them, wet etching is widely used in semiconductor manufacturing industry because of its low cost and basically no structural damage to the surface. However, wet etching has limited the etching morphology to be a narrow and deep tunnel shape in the micro-fabrication process due to the isotropy of etching, so wet etching is mostly used for etching processes with small aspect ratio or low precision requirement. As shown in fig. 1, a typical topography of a semiconductor device is formed by wet etching, where 101 is a mask, 102 is an etched thin film structure, and 103 is a substrate, and the wet etching can also laterally etch under the mask in addition to vertical etching, so that it is difficult to obtain a topography with a large aspect ratio. While dry etching is isotropic, dry etching involves complex mechanical, electrical and vacuum equipment, coupled with automated etch endpoint detection and control equipment, which is expensive in equipment investment.
That is, there is no wet etching method that can achieve large-scale mass production and can obtain a profile with a large aspect ratio, and therefore, it is very necessary to provide a semiconductor device etching method that is low in cost and can achieve anisotropy.
Disclosure of Invention
Objects of the invention
The invention provides a semiconductor device photochemical etching method, which can improve the wet chemical etching directionality, obtain the morphology with a larger depth-to-width ratio, realize large-scale mass production, replace dry etching to a certain extent and save the cost.
(II) technical scheme
In order to achieve the purpose, the invention adopts the main technical scheme that:
a semiconductor device photochemical etching method comprises the following steps:
s1, chemically etching the surface to be etched of the semiconductor structure with the mask layer for a first preset time period to obtain a pre-etched semiconductor structure;
s2, generating an electric field in the to-be-etched area of the pre-etched semiconductor structure by using illumination to etch the to-be-etched area deeply, and obtaining the semiconductor device with the preset depth-to-width ratio.
The semiconductor structure is pre-etched before deep etching, after an etch pit of the pre-etching is obtained, illumination is assisted, an electric field is generated in a region to be etched by utilizing capture of a photon-generated carrier, and due to the fact that the etch pit exists, the photon-generated carrier is distributed differently, anisotropic etching is generated, and the shape with a large depth-to-width ratio is obtained.
In a preferred embodiment, the step S2 includes:
continuing chemical etching on the surface to be etched of the pre-etched semiconductor structure, and,
and increasing illumination on the back of the area to be etched of the pre-etched semiconductor structure so as to generate an electric field in the area to be etched in the pre-etched semiconductor structure.
Optionally, in step S1, the chemical etching solution is: H2O 2: NH4 OH: H2O ═ 1:4: 20.
The first preset time period is 10 s.
In an alternative, the step S2 includes:
continuing chemical etching on the surface to be etched of the pre-etched semiconductor structure, and,
and irradiating the back surface of the region to be etched of the pre-etched semiconductor structure by using an LED with a preset wave band so as to generate an electric field in the region to be etched of the pre-etched semiconductor structure.
Optionally, the etching rate is controlled by adjusting the light intensity.
In an optional scheme, the deep etching of the region to be etched in step S2 includes:
and adjusting the position of the pre-etched semiconductor structure to enable the surface to be etched uniformly.
In another aspect, the present invention provides an etching apparatus for semiconductor device photochemical etching, including:
a carrier supporting a semiconductor structure to be etched;
the liquid medicine containing device is used for storing chemical etching liquid medicine;
the carrier and the semiconductor structure are placed in a liquid medicine containing device, and the surface of the semiconductor structure is soaked in the liquid medicine for chemical etching;
and a light source for illuminating the area to be etched of the semiconductor structure is arranged on the back surface of the semiconductor structure.
The carrier is a roller, and the semiconductor structure is driven to move in the liquid medicine containing device through rolling of the roller.
The roller is connected with a driving device, and the driving device drives the roller to roll so as to move the semiconductor structure.
Optionally, the liquid medicine containing device comprises a feeding end and a discharging end; the roller is driven by the driving device to convey the semiconductor structure into the liquid medicine containing device from the feeding end and convey the liquid medicine containing device from the discharging end.
Optionally, the etching apparatus further comprises a liquid medicine circulating device. The liquid medicine circulating device is located on the outer side of the liquid medicine containing device and used for collecting liquid medicine overflowing from the liquid medicine containing device and sending the liquid medicine into the liquid medicine containing device for recycling. The liquid medicine circulating device comprises a water tank, a liquid storage tank and a water pump;
the water tank is positioned outside the feeding end and the discharging end of the liquid medicine containing device and used for collecting liquid medicine overflowing from the feeding end and the discharging end;
the water tank is provided with a water tank pipeline, and overflowing liquid medicine collected by the water tank enters the liquid storage tank through the water tank pipeline;
the liquid medicine pump of liquid storage pot is got to liquid medicine and is held the device with the liquid pump.
The device has simple structure, can be applied to actual large-scale production, and saves cost.
(III) advantageous effects
The invention has the beneficial effects that: the semiconductor structure is pre-etched before deep etching, after a pre-etched etch pit is obtained, illumination is assisted, and an electric field is generated in a region to be etched by utilizing capture of a photon-generated carrier, so that anisotropic etching is generated, the directionality of wet chemical etching is improved, and the morphology with a large depth-to-width ratio can be obtained.
By adjusting the illumination intensity, the distribution of photon-generated carriers can be adjusted to control the etching directionality and improve the etching precision.
Drawings
FIG. 1 is a schematic diagram of a semiconductor device topography structure using wet etching in the prior art;
FIG. 2 is a flow chart of an etching method according to an embodiment of the present application;
FIG. 3 is a schematic view of a GaAs structure to be etched by an etching method according to an embodiment of the present application;
FIG. 4 is a schematic view of a GaAs structure after etching is completed by an etching method according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of an etching method according to an embodiment of the present application;
FIG. 6 is a diagram showing the structure of an etching apparatus according to an embodiment of the present application;
FIG. 7 is a flowchart of an etching method according to an embodiment of the present application.
[ reference numerals ]
101. Masking; 102. a film; 103. a substrate; 201. n-GaAs structure to be etched; 201 a.n-GaAs structure etching area; an n-AlAs structure; n-GaAs structure; 204. undoped GaAs structures; AlGaAs/GaAs structure 205; 301. etching the completed n-GaAs structure; 401. the surface to be etched of the semiconductor structure; 402. etching the liquid medicine; 403. illumination; 404; etching the pits; 405. a cavity; 501. a carrier; 502. a liquid medicine containing device; 503. a light source; 504. a water tank; 505. a liquid storage tank; 506. a water pump; 507. a sink conduit; 508. and (5) liquid medicine.
Detailed Description
For a better understanding of the present invention, reference will now be made in detail to the present invention by way of specific embodiments thereof.
Method embodiment
The present embodiment is a method for photo-chemically etching a semiconductor device, taking an n-type III-V semiconductor device GaAs as an example, and specifically, as shown in fig. 2, the method includes the following steps:
s1, chemically etching the surface to be etched of the semiconductor structure with the mask layer for a first preset time period to obtain the pre-etched semiconductor structure.
Wherein, the chemical etching liquid medicine is: H2O 2: NH4 OH: H2O ═ 1:4: 20.
The first preset time period is 10 s.
The semiconductor structure with mask layer is shown in fig. 3, wherein 201 is n-GaAs structure with mask layer to be etched, and 202 is
203 is an n-GaAs structure, 204 is an undoped GaAs structure, and 205 is an alternating AlGaAs and GaAs structure. Chemical etching is carried out on the surface to be etched of the n-GaAs semiconductor structure 201 with the mask layer, and the dotted line area 201a is a part to be etched. In this embodiment, the portion to be etched is an anode of an n-GaAs semiconductor structure.
H2O2 was used: NH4 OH: H2O is pre-etched for 10s in a liquid medicine with the ratio of 1:4:20, the etching rate is about 0.2 mu m/min, a pre-etched semiconductor structure is obtained, and shallow etching pits with the thickness of about 30nm are formed.
And S2, generating an electric field in the region to be etched of the pre-etched semiconductor structure by using illumination so as to etch the region to be etched deeply, and obtaining the semiconductor device with the preset depth-to-width ratio.
The etched semiconductor structure is shown in fig. 4, and 301 is an etched n-GaAs structure.
In this embodiment, the method adopted in step S2 is as follows:
and continuing to perform chemical etching on the surface to be etched of the pre-etched semiconductor structure, and increasing illumination on the back of the area to be etched of the pre-etched semiconductor structure so as to enable the area to be etched in the pre-etched semiconductor structure to generate an electric field.
As shown in fig. 5, the pre-etched n-GaAs semiconductor structure to be etched surface 401, i.e., the anode of the GaAs semiconductor structure, wherein the pre-etched n-GaAs semiconductor structure includes etch pits 404. And continuously soaking the pre-etched n-type GaAs semiconductor structure in an etching liquid 402, H2O 2: NH4 OH: chemical etching is performed in a ratio of 1:4:20 with H2O, and light 403 is applied to the back surface of the n-type GaAs semiconductor, that is, the cathode of the — GaAs semiconductor structure. Due to photoelectric effect, photon-generated carriers, namely electron-hole pairs, are generated in the GaAs semiconductor device, the holes 405 move towards the cathode of the GaAs semiconductor structure, the electrons move towards the anode of the GaAs semiconductor structure, the electrons are concentrated on the etched surface, and the holes are far away from the etched surface and penetrate into a region to be etched to form an internal electric field.
GaAs photochemical etching reaction principle:
under the action of an electric field, electrons are completely concentrated on the surface of a shallow etch pit 403 of a pre-etched semiconductor structure, namely the tip of an induction pit (etch pit) manufactured on a substrate before deep etching, so that the corrosion of the tip of the surface of the etch pit 403 of the GaAs semiconductor structure is accelerated, and therefore, anisotropic corrosion is generated.
Alternatively, step S2 may employ the following method:
chemical etching is continued on the surface to be etched of the pre-etched semiconductor structure, and,
and irradiating the back surface of the region to be etched of the pre-etched semiconductor structure by using the LED with the preset wave band so as to generate an electric field in the region to be etched of the pre-etched semiconductor structure.
Wherein the illumination used is a visible light LED. Preferably, blue LEDs are used.
In practical application, the magnitude of the photocurrent can be controlled by adjusting the illumination intensity, so as to control the etching rate.
The light intensity can be adjusted to enable the current carriers to be completely concentrated at the tip of the channel, so that anisotropic corrosion is generated, over-etching caused by mask combination in the process can be greatly reduced, and the yield is improved.
The etching method of the embodiment improves the directionality of wet chemical etching, and experimental results prove that the deep and wide morphology of 200:1 can be obtained. Meanwhile, the method of the embodiment is simple and can realize large-scale mass production, dry etching is replaced to a certain extent, and cost is saved.
In an optional scheme, performing deep etching on a region to be etched includes: and adjusting the position of the pre-etched semiconductor structure to ensure that the surface to be etched is uniformly etched.
When the back of the area to be etched of the pre-etched semiconductor structure is illuminated, the semiconductor device is controlled to move circularly in the liquid medicine through the etching device, so that the etching is more uniform.
Device embodiment
An etching apparatus for photochemical etching of a semiconductor device is shown in fig. 6, and includes: a carrier 501, a liquid medicine containing device 502 and a light source 503;
a carrier 501 for supporting a semiconductor structure to be etched;
a chemical liquid containing device 502 for storing a chemical etching chemical liquid 508;
the carrier 501 and the semiconductor structure are placed in a liquid medicine containing device, and the surface of the semiconductor structure is soaked in the liquid medicine for chemical etching;
the back side of the semiconductor structure is provided with a light source 503 for illuminating the region of the semiconductor structure to be etched.
In this embodiment, the carrier 501 is a roller, and the roller rolls to drive the semiconductor structure to move in the liquid medicine containing device.
In practical applications, the roller may be connected to a driving device, and the driving device drives the roller to roll, so as to move the semiconductor structure.
Optionally, the liquid medicine containing device comprises a feeding end and a discharging end; the roller is driven by the driving device to convey the semiconductor structure into the liquid medicine containing device from the feeding end and convey the liquid medicine containing device from the discharging end.
Optionally, the etching device further comprises a liquid medicine circulating device.
The liquid medicine circulating device is located on the outer side of the liquid medicine containing device and used for collecting liquid medicine overflowing from the liquid medicine containing device and sending the liquid medicine into the liquid medicine containing device for recycling.
The liquid medicine circulating device comprises a water tank 504, a liquid storage tank 505 and a water pump 506;
the water tank 504 is positioned outside the feeding end and the discharging end of the liquid medicine containing device and is used for collecting liquid medicine overflowing from the feeding end and the discharging end;
the water tank 504 is provided with a water tank pipeline 507, and overflowing liquid medicine collected by the water tank enters the liquid storage tank 505 through the water tank pipeline;
the liquid pump 507 pumps the liquid medicine from the liquid storage tank to the liquid medicine containing device 502.
In practical use, the method of the present invention is used to perform photochemical etching on a semiconductor structure by using an etching apparatus as shown in fig. 7:
601. the semiconductor structure to be etched is conveyed to the etching device by the roller.
And conveying the semiconductor structure to be etched into an etching device by the roller to carry out photochemical etching.
602. And chemically etching the semiconductor structure to be etched.
Firstly, chemical etching without a light source is carried out, and an etching pit is formed on the surface of the semiconductor structure to be etched.
603. And opening a light source, and performing chemical etching and illumination on the pre-etched semiconductor structure.
And opening a light source in the etching device, and illuminating the back surface of the pre-etched semiconductor structure after the etch pit is formed to perform photochemical etching.
In the etching process of step 602 and step 603, the semiconductor structure to be etched is immersed in the liquid medicine, and the roller transmits the movement to enable the surface to be etched uniformly.
604. And obtaining the semiconductor device with the preset depth-to-width ratio, and sending the semiconductor device out of the etching device by the roller.
The device has simple structure, breaks through the isotropic bottleneck of chemical etching, can replace dry etching under certain conditions, and saves the cost.
It is to be understood that the invention is not limited to the specific arrangements and instrumentality described above and shown in the drawings. A detailed description of known methods is omitted herein for the sake of brevity. In the above embodiments, several specific steps are described and shown as examples. However, the method processes of the present invention are not limited to the specific steps described and illustrated, and those skilled in the art can make various changes, modifications and additions or change the order between the steps after comprehending the spirit of the present invention.
Finally, it should be noted that: the above-mentioned embodiments are only used for illustrating the technical solution of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A method of photochemical etching of a semiconductor device, comprising:
s1, chemically etching the surface to be etched of the semiconductor structure with the mask layer for a first preset time period to obtain a pre-etched semiconductor structure;
s2, generating an electric field in the region to be etched of the pre-etched semiconductor structure by using light irradiation to etch the region to be etched deeply, and obtaining the semiconductor device with the preset depth-to-width ratio.
2. The method of claim 1,
the step S2 includes:
continuing chemical etching on the surface to be etched of the pre-etched semiconductor structure, and,
and increasing illumination on the back of the area to be etched of the pre-etched semiconductor structure so as to generate an electric field in the area to be etched in the pre-etched semiconductor structure.
3. The method of claim 2,
in step S1, the chemical etching solution is: H2O 2: NH4 OH: H2O ═ 1:4: 20.
4. The method according to claim 3, wherein in the step S1, the first preset time period is 10S.
5. The method according to claim 1, wherein the step S2 includes:
continuing chemical etching on the surface to be etched of the pre-etched semiconductor structure, and,
and irradiating the back surface of the region to be etched of the pre-etched semiconductor structure by using an LED with a preset wave band so as to generate an electric field in the region to be etched of the pre-etched semiconductor structure.
6. The method according to claim 5, wherein the step S2 further comprises:
and controlling the etching rate by adjusting the illumination intensity of the LED.
7. The method according to claim 1, wherein the step S2 of deep etching the region to be etched includes:
and adjusting the position of the pre-etched semiconductor structure to enable the surface to be etched uniformly.
8. An etching apparatus for photochemical etching of a semiconductor device, comprising:
a carrier to support a semiconductor structure to be etched; and
the liquid medicine containing device is used for storing chemical etching liquid medicine; wherein the content of the first and second substances,
the carrier and the semiconductor structure are arranged in the liquid medicine containing device, and the surface of the semiconductor structure is soaked in the liquid medicine for chemical etching;
and a light source for illuminating the area to be etched of the semiconductor structure is arranged on the back surface of the semiconductor structure.
9. Etching apparatus according to claim 8,
the carrier is a roller, and the semiconductor structure is driven to move in the liquid medicine containing device through rolling of the roller.
10. The etching apparatus according to claim 8, further comprising a liquid circulation device;
the liquid medicine circulating device is located on the outer side of the liquid medicine containing device and used for collecting liquid medicine overflowing from the liquid medicine containing device and sending the liquid medicine into the liquid medicine containing device for recycling.
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| CN201811459406.0A CN111261506A (en) | 2018-11-30 | 2018-11-30 | Semiconductor device photochemical etching method and device |
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