CN111257998A - Chip type optical antenna for phase-controlled laser scanning and manufacturing method thereof - Google Patents
Chip type optical antenna for phase-controlled laser scanning and manufacturing method thereof Download PDFInfo
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- CN111257998A CN111257998A CN201811459168.3A CN201811459168A CN111257998A CN 111257998 A CN111257998 A CN 111257998A CN 201811459168 A CN201811459168 A CN 201811459168A CN 111257998 A CN111257998 A CN 111257998A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
- G02B6/1347—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using ion implantation
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/138—Integrated optical circuits characterised by the manufacturing method by using polymerisation
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Abstract
The invention discloses a chip type optical antenna for laser phase control scanning and a manufacturing method thereof. The method comprises the following steps: providing a substrate and manufacturing a planar optical waveguide on the substrate; the planar optical waveguide comprises a first part and a second part which are connected; carrying out wet etching and ion implantation on the second part to enable the second part to bend towards the side away from the substrate to form a bent waveguide section; while the first portion forms a horizontal waveguide section, the horizontal waveguide section and the curved waveguide section together forming a curved optical waveguide. The chip type optical antenna for laser phase control scanning has high light output efficiency and less stray light of far-field side lobes after coherent synthesis. The manufacturing method of the invention is compatible with the CMOS process and is beneficial to batch production.
Description
Technical Field
The invention relates to the technical field of laser radar and laser communication, in particular to a chip type optical antenna for phase-controlled laser scanning and a manufacturing method thereof.
Background
Spatial scanning of light-emitting units in lidar systems and laser communication systems is typically accomplished by two methods, one by mechanical scanning and the other by phased antenna arrays. Compared with mechanical motion scanning, phased antenna arrays have the advantages of high reliability, easy integration and the like, and are widely researched in recent years.
As shown in fig. 1, a phased antenna array is generally composed of a phase control unit for controlling the phase of light reaching the antenna elements by an optical delay line, a thermo-optical effect, or an electro-optical effect, and antenna elements for emitting light having a fixed phase relationship, which reaches the antenna. The multiple beams of light emitted by the antenna array with fixed phase relation interfere with each other to form a stable combined beam. The phase relation among a plurality of beams of coherent light emitted by the antenna unit array is regulated and controlled through the phased unit array, and the space scanning of the emergent combined light can be realized.
The existing chip type optical antenna array is mainly realized by two structural arrangements such as a wiener optical antenna unit and a waveguide grating structure. Wiener optical antenna array (as shown in fig. 2) uses the theory of microwave antenna to realize the output of light from waveguide to space, and it has the advantages of chip formation and easy integration, however, its lower emergent efficiency and more stray light are the problems to be solved urgently. The chip type optical antenna array (as shown in fig. 3) with the waveguide grating structure arrangement realizes the output of light from the waveguide to the space by using the momentum matching provided by the grating, and has the advantages of chip formation, easy integration and the like; however, it has only one-dimensional scanning, which needs to be achieved by means of a tuned laser in two dimensions; the low exit efficiency and the non-uniformity of the output intensity along the waveguide direction restrict the application of the chip-type optical antenna array with the waveguide grating structure. Therefore, no matter the plane antenna or the coupling grating is adopted, not only is the light emitting efficiency lower, but also the emergent light has more stray light, so that the coherent beam combination generates side lobe light.
Disclosure of Invention
In view of the defects of the prior art, an object of the present invention is to provide a chip-type optical antenna for phased laser scanning and a method for manufacturing the same, so as to provide a chip-type optical antenna with high light output efficiency and less stray light of side lobes, and to provide a method for manufacturing the chip-type optical antenna with high process compatibility and capable of mass production.
In order to achieve the purpose of the invention, the invention adopts the following technical scheme:
in one general aspect, the present invention provides a method of fabricating a chip-based optical antenna for laser phase-controlled scanning, the method comprising:
providing a substrate;
manufacturing a planar optical waveguide on the substrate; wherein the planar optical waveguide comprises a first portion and a second portion connected;
carrying out wet etching and ion implantation on the second part to enable the second part to bend towards the side away from the substrate to form a bent waveguide section; while the first portion forms a horizontal waveguide section, the horizontal waveguide section and the curved waveguide section together forming a curved optical waveguide.
Preferably, the method specifically comprises:
processing the second part by using a wet etching process to manufacture a cantilever beam;
implanting ions at a preset position of the cantilever beam by using an ion implantation process to generate tensile stress, and bending the cantilever beam to one side back to the substrate under the action of the tensile stress to form a bent waveguide section; while the first portion forms a horizontal waveguide segment.
Preferably, the method specifically comprises:
implanting ions at a preset position of the second part by using an ion implantation process to generate tensile stress;
processing the second part by using a wet etching process, wherein the second part is bent to the side away from the substrate due to the release of tensile stress in the wet etching process to form a bent waveguide section; while the first portion forms a horizontal waveguide segment.
Preferably, the manufacturing of the planar optical waveguide on the substrate specifically includes:
coating photoresist on the substrate, and exposing the photoresist to form a pattern of the planar optical waveguide;
and etching the substrate to form the planar optical waveguide by using the pattern formed by the photoresist as a mask.
Preferably, the planar optical waveguides fabricated on the substrate are provided in plural, and the plural planar optical waveguides are arranged at intervals, so that the plural curved waveguide segments formed are arranged in two dimensions.
Preferably, the manufacturing method further comprises: and depositing a low-refractive-index thin film on the surface of the curved waveguide section.
Preferably, the manufacturing method further comprises: at the end of the curved waveguide section, a lens for shaping the outgoing light beam is made.
Preferably, the angle between the horizontal waveguide section and the curved waveguide section is 45 ° to 135 °.
Preferably, the length of the curved waveguide section is between 2 μm and 50 μm.
In another general aspect, the present invention further provides a chip-type optical antenna for laser phase-controlled scanning, including a substrate and a curved optical waveguide disposed on the substrate, wherein the curved optical waveguide includes a horizontal waveguide segment on the substrate and a curved waveguide segment connected to an end of the horizontal waveguide segment, and the curved waveguide segment extends toward a side away from the substrate and forms an included angle with the horizontal waveguide segment.
The chip type optical antenna for laser phase control scanning is characterized in that light passing through a phase shift array is transmitted to the tail end of a bent silicon waveguide antenna unit along a waveguide and then directly emitted out. It is not like wiener optical antenna, and needs to be emitted by means of structural scattering; the waveguide grating antenna array is not like a waveguide grating antenna array, and the waveguide grating antenna array is emitted by means of momentum matching provided by the grating; therefore, the light output efficiency is high, and far-field side lobe stray light is less after coherent synthesis. And the manufacturing method of the invention is compatible with the CMOS process, and is beneficial to batch production.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a schematic diagram of a prior art phased antenna array;
FIG. 2 is a schematic diagram of a prior art wiener optical antenna array;
fig. 3 is a schematic structural diagram of a chip-type optical antenna array with waveguide grating structure arrangement in the prior art.
Fig. 4 is a schematic structural diagram of a chip-type optical antenna for laser phase control scanning according to embodiment 1 of the present invention.
Fig. 5 is a front schematic top view of fig. 4.
Fig. 6 to 11 are flowcharts of a method for manufacturing a chip-type optical antenna for laser phase control scanning according to embodiment 2 of the present invention.
Fig. 6 is a schematic top view of a substrate with a planar optical waveguide formed thereon.
Fig. 7 is a side view of fig. 6.
Detailed Description
Technical solutions in the embodiments of the present invention will be described in detail below with reference to the drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only a part of the embodiments of the present invention, and not all the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the scope of the present invention.
Example 1
Fig. 4 is a schematic structural diagram of an exemplary chip-type optical antenna for laser phase control scanning according to the present invention.
Fig. 5 is a front schematic top view of fig. 4.
Referring to fig. 4 and 5, the invention exemplarily provides a chip-type optical antenna 100 for laser phase-controlled scanning, where the chip-type optical antenna 100 includes a substrate 1 and a curved optical waveguide 21 disposed on the substrate 1, where the curved optical waveguide 21 includes a horizontal waveguide segment 211 on the substrate and a curved waveguide segment 212 connected to an end of the horizontal waveguide segment 211, and the curved waveguide segment 212 extends toward a side away from the substrate 1 and forms an included angle with the horizontal waveguide segment 211. Preferably, the angle between the horizontal waveguide segment 211 and the curved waveguide segment 212 is 45 ° to 135 °. Preferably, the included angle is 90 °, that is, the curved waveguide segment 212 is vertically connected to the end of the horizontal waveguide segment 211, that is, the curved waveguide segment 212 is vertical to the substrate 1. The substrate 1 is a substrate on which a waveguide can be fabricated, such as an SOI substrate.
Preferably, a plurality of curved optical waveguides 21 are disposed on the substrate 1, wherein each curved optical waveguide 21 includes a horizontal waveguide segment 211 and a curved waveguide segment 212, and the plurality of curved optical waveguides 21 are disposed at intervals, so that the plurality of curved waveguide segments 212 at the ends of the plurality of curved optical waveguides 21 are arranged in two dimensions (in a top view), that is, the plurality of curved waveguide segments 212 are not located on the same straight line at the same time, thereby forming an optical antenna unit arranged in two dimensions. Preferably, the plurality of curved waveguide segments 212 at the ends of the plurality of curved optical waveguides 21 are arranged in a two-dimensional array. The two-dimensional array arrangement method can be various, such as an oblique array, a rectangular array, a triangular array, a sector array, and the like.
In one embodiment, the plurality of curved light guides 21 may be arranged at intervals such that the lengths of the plurality of curved light guides 21 are not equal to each other. It is preferable to arrange the plurality of curved optical waveguides 21 at equal intervals and to equalize the length difference between the plurality of curved optical waveguides 21, so that the plurality of curved waveguide segments 212 at the ends of the plurality of curved optical waveguides 21 are arranged in a two-dimensional array.
Illustratively, referring to fig. 4 and 5, a first curved optical waveguide 21a having a first length, a second curved optical waveguide 21b having a second length, and a third curved optical waveguide 21a having a third length are arranged on the substrate 1 at equal intervals, and the first curved optical waveguide 21a, the second curved optical waveguide 21b, and the third curved optical waveguide 21a are arranged in multiple groups at equal intervals. Each of the first curved optical waveguides 21a includes a first horizontal waveguide segment 211a and a first curved waveguide segment 212a connected to an end of the first horizontal waveguide segment 211 a; each of the second curved optical waveguides 21b includes a second horizontal waveguide segment 211b and a second curved waveguide segment 212b connected to an end of the second horizontal waveguide segment 211 b; each of the third curved optical waveguides 21c includes a third horizontal waveguide segment 211c and a third curved waveguide segment 212c connected to an end of the third horizontal waveguide segment 211 c. The length difference between the first length, the second length and the third length is equal, and the lengths of the first curved waveguide segment 212a, the second curved waveguide segment 212b and the third curved waveguide segment 212c are substantially equal, as shown in fig. 5, so that all the curved waveguide segments 212 are arranged in a two-dimensional array. It should be noted that the three curved waveguides with different lengths are illustrated in this embodiment for illustrative purposes only, and are not limited thereto, and the arrangement, number and length of the curved waveguides can be selected according to practical situations.
Preferably, the length of the curved waveguide segment 212 is 2 μm to 50 μm. The curved waveguide section 212, i.e. the curved waveguide optical antenna unit, has a length of between 2 μm and 50 μm.
It can be understood that the optical antenna of the present invention comprises horizontal optical waveguides disposed on a substrate and a curved waveguide optical antenna unit connected to an end of each of the horizontal optical waveguides, wherein the curved waveguide optical antenna unit can be manufactured by a method in which stress generated by ion implantation causes the waveguides to be automatically curved.
Further, in order to reduce the transmission loss of the outgoing light in the curved waveguide section 212, a low refractive index film may be deposited on the surface of the curved waveguide section 212 by a vacuum coating method. Illustratively, the low refractive index film may be one of silicon oxide, hafnium oxide, aluminum oxide, silicon nitride, silicon oxynitride to better confine the light to the curved waveguide segment 212. It should be noted that, the deposition of the low-refractive-index film on the surface of the curved waveguide segment 212 means that the low-refractive-index film is deposited on all the surfaces of the curved waveguide segment 212.
Preferably, in order to improve the directivity of the outgoing light, a tiny lens (not shown) may be fabricated on top of the curved waveguide section 212 to shape the outgoing light beam. It should be noted that, the fabricating a microlens on the top of the curved waveguide segment 212 refers to fabricating a microlens on the top of all the curved waveguide segments 212.
Referring to fig. 11, in the chip-type optical antenna for laser phased scanning according to the present invention, light passing through the phase shift array is transmitted to the end of the curved waveguide antenna unit along the waveguide and then directly exits. It is not like wiener optical antenna, and needs to be emitted by means of structural scattering; the light does not need to be emitted out by virtue of momentum matching provided by the grating, unlike a waveguide grating antenna array, so that the light has the advantages of high light output efficiency, less stray light of far-field side lobes after coherent synthesis and the like. Experiments prove that the chip type optical antenna with the bent waveguide has the advantages that the light output rate is greatly improved, and the stray light of side lobes is obviously reduced.
Example 2
Referring to fig. 6 to 11, the present invention exemplarily provides a manufacturing method for manufacturing the chip-type optical antenna 100 for laser phase control scanning, where the manufacturing method specifically includes:
step S1, as shown in fig. 6, provides a substrate 1. The substrate 1 is a substrate on which a waveguide can be fabricated, such as an SOI substrate.
Step S2, referring to fig. 6 and 7, is to fabricate the planar optical waveguide 20 on the substrate 1. Wherein the planar optical waveguide 20 comprises a first portion 201 and a second portion 202 connected. Preferably, a plurality of planar optical waveguides 20 are manufactured, each planar optical waveguide 20 includes a first portion 201 and a second portion 202 connected to each other, and the plurality of planar optical waveguides 20 are arranged at intervals. Illustratively, the plurality of planar optical waveguides 20 are not as equal in length.
Exemplarily, referring to fig. 6 and 7, a first planar optical waveguide 20a having a first total length, a second planar optical waveguide 20b having a second total length, and a third planar optical waveguide 20c having a third total length are fabricated on the substrate 1, and the first planar optical waveguide 20a, the second planar optical waveguide 20b, and the third planar optical waveguide 20c are arranged in multiple groups at equal intervals, wherein the total lengths of the first total length, the second total length, and the third total length are sequentially increased and have equal total length differences. Each planar optical waveguide 20 includes a first portion 201 and a second portion 202, such as a first portion 201a and a second portion 202a of the first planar optical waveguide 20 a; a first portion 201b and a second portion 202b of the second planar optical waveguide 20 b; the third planar optical waveguide 20c has a first portion 201c and a second portion 202 c. The lengths of the second portions 202 of the planar optical waveguides 20 are substantially equal, that is, the lengths of the second portions 202a, 202b and 202c of the first planar optical waveguide 20a, the second planar optical waveguide 20b and the third planar optical waveguide 20c are substantially equal.
It should be noted that the first portion 201 and the second portion 202 described in this embodiment are only provided for convenience of description, and in an actual manufacturing process, the first portion 201 and the second portion 202 are integrally formed on the substrate 1. As will be understood from the subsequent manufacturing process, the second portion 202 is used to bend to form the curved waveguide segment 212, so that the length of the second portion 202 occupying the entire planar optical waveguide 20 can be selected according to the length of the curved waveguide segment 212.
Illustratively, the step S2 of fabricating the planar optical waveguide 20 on the substrate 1 specifically includes:
step S21, coating a photoresist on the substrate 1, and exposing the photoresist to form a pattern of a planar optical waveguide.
Step S22, etching the substrate 1 to form the planar optical waveguide 20 using the pattern formed by the photoresist as a mask. Wherein, the step S22 etches the optical waveguide layer on the top layer of the substrate 1.
Preferably, the plurality of planar optical waveguides 20 are formed at one time by step S2.
Step S3, referring to fig. 8, the second portion 202 is processed by a wet etching process to form a cantilever beam a. All the second portions 202 are processed by the wet etching process of this step, so that all the second portions 202 are separated from the substrate 1 to form the cantilever beam a. The selection of the etching solution in the wet etching process is determined by the material of the waveguide.
Based on the above, the first cantilever a1, the second cantilever a2, and the third cantilever a3 are formed, wherein the first cantilever a1, the second cantilever a2, and the third cantilever a3 can be formed by a single wet etching process.
Step S4, referring to fig. 9 and 10, implanting ions at a predetermined position of the cantilever beam a by using an ion implantation process to generate a tensile stress, wherein the cantilever beam a is bent toward a side away from the substrate 1 under the tensile stress to form a bent waveguide segment 212; while the first portion 201 forms a horizontal waveguide section 211, the horizontal waveguide section 211 and the curved waveguide section 212 together constituting the curved optical waveguide 21.
Continuing from the above, the first portion 201a of the first planar optical waveguide 20a forms a first horizontal waveguide segment 211a, and the second portion 202a is bent to form a first curved waveguide segment 212 a; the first portion 201b of the second planar optical waveguide 20b forms a second horizontal waveguide segment 211b, and the second portion 202b is bent to form a second curved waveguide segment 212 b; the first portion 201c of the third planar optical waveguide 20c forms a third horizontal waveguide segment 211c and the second portion 202c is bent to form a third curved waveguide segment 212 c. As shown in fig. 5 and 10, the plurality of curved waveguide segments 212 formed by bending are arranged in a two-dimensional array.
Wherein, the ion implanter can be selected to operate in the process of ion implantation, and the implantation dosage, implantation energy and implantation beam current of the ion implantation are related to the properties of the thickness, the width and the like of the waveguide layer. For example, in a 220 nm thick, 10 micron long, 1 micron wide silicon cantilever on an SOI substrate, each square centimeter is typically implanted at 5.0X 1015And (c) ions. The selection of the predetermined position may be specifically selected according to the length of the curved waveguide segment 212.
Referring to fig. 10, the included angle α between the horizontal waveguide segment 211 and the curved waveguide segment 212 is preferably 45 ° to 135 °, and the included angle α is preferably 90 °, that is, the curved waveguide segment 212 is vertically connected to the end of the horizontal waveguide segment 211, that is, the curved waveguide segment 212 is vertical to the substrate 1.
Preferably, the length of the curved waveguide segment 212 is 2 μm to 50 μm. The manufactured bent waveguide section 212 with the length between 2 mu m and 50 mu m is the bent waveguide section optical antenna unit.
Further, referring to fig. 11, in order to reduce the transmission loss of the outgoing light in the curved waveguide segment, the manufacturing method may further include step S5 of depositing a low refractive index film 3 on the surface of the curved waveguide segment by vacuum deposition. The low refractive index film 3 may be one of silicon oxide, hafnium oxide, aluminum oxide, silicon nitride, silicon oxynitride to better confine the light to the curved waveguide segment 212. It should be noted that, the deposition of the low refractive index film 3 on the surface of the curved waveguide segment 212 means that the low refractive index film 3 is deposited on all the surfaces of the curved waveguide segment 212.
Further, in order to improve the directivity of the outgoing light, the manufacturing method may further include step S6 of manufacturing a micro lens (not shown) for shaping the outgoing light beam on top of the end of the curved waveguide section, and shaping the outgoing light beam. It should be noted that, the fabricating a microlens on the top of the curved waveguide segment 212 refers to fabricating a microlens on the top of all the curved waveguide segments 212.
The sequence of steps S5 and S6 may be reversed, and this is merely for illustration and the sequence of steps is not limited.
Example 3
The present invention exemplarily provides another manufacturing method for manufacturing the chip-type optical antenna 100 with laser phase-controlled scanning, which is different from embodiment 2 in that the embodiment first performs ion implantation on the second portion by using an ion implantation process, and then processes the ion-implanted second portion by using a wet etching process to form a horizontal waveguide segment and a curved waveguide segment, and specifically, the manufacturing method of the embodiment specifically includes:
step S1' provides a substrate. Wherein the substrate is a substrate for manufacturing a waveguide, such as an SOI substrate.
Step S2', a planar optical waveguide is fabricated on the substrate. Wherein the planar optical waveguide comprises a first portion and a second portion connected. Preferably, a plurality of planar optical waveguides are manufactured, each planar optical waveguide comprises a first portion and a second portion which are connected, and the plurality of planar optical waveguides are arranged at intervals. Further, the lengths of the plurality of planar optical waveguides are not equal to each other.
It should be noted that the first portion and the second portion described in this embodiment are only provided for convenience of description, and in an actual manufacturing process, the first portion and the second portion are integrally formed on the substrate. And as can be seen from the subsequent manufacturing process, the second portion is used for bending to form a curved waveguide segment, and therefore, the length of the second portion occupying the whole planar optical waveguide can be selected according to the length of the curved waveguide segment.
Illustratively, the step S2' of fabricating the planar optical waveguide on the substrate specifically includes:
step S21', coating a photoresist on the substrate, and exposing the photoresist to form a pattern of the planar optical waveguide.
And step S22', etching the substrate to form the planar optical waveguide by using the pattern formed by the photoresist as a mask. Wherein, what is etched in this step is the optical waveguide layer located in the top layer of the substrate.
Preferably, the plurality of planar optical waveguides are formed at one time through step S2'.
Step S3', implanting ions at the predetermined position of the second portion by using an ion implantation process, generating a tensile stress. Wherein the selection of said predetermined position is specifically selected in dependence on the length of the curved waveguide section. Wherein, the ion implanter can be selected to operate in the process of ion implantation, and the implantation dosage, implantation energy and implantation beam current of the ion implantation are related to the properties of the thickness, the width and the like of the waveguide layer. For example atIn a 220 nm thick, 10 micron long, 1 micron wide silicon cantilever on an SOI substrate, each square centimeter is typically implanted at 5.0 × 1015And (c) ions.
Step S4', processing the second part by using a wet etching process, wherein the second part is bent to the side away from the substrate due to the release of tensile stress in the wet etching process to form a bent waveguide section; while the first portion forms a horizontal waveguide section, the horizontal waveguide section and the curved waveguide section together forming a curved optical waveguide. Preferably, the plurality of curved optical waveguides are formed, wherein each of the plurality of curved optical waveguides includes a horizontal waveguide section and a curved waveguide section, and the plurality of curved optical waveguides are arranged at intervals so that the plurality of curved waveguide sections at the ends of the plurality of curved optical waveguides are arranged in two dimensions. Preferably, the lengths of the plurality of curved optical waveguides are not equal and are arranged at equal intervals, so that the plurality of curved waveguide segments at the ends of the plurality of curved optical waveguides are arranged in a two-dimensional array.
Wherein, the ion implanter can be selected to operate in the process of ion implantation, and the implantation dosage, implantation energy and implantation beam current of the ion implantation are related to the properties of the thickness, the width and the like of the waveguide layer. For example, in a 220 nm thick, 10 micron long, 1 micron wide silicon cantilever on an SOI substrate, each square centimeter is typically implanted at 5.0X 1015And (c) ions. The selection of the predetermined position may be specifically selected according to the length of the curved waveguide segment 212.
Wherein the included angle between the horizontal waveguide section and the curved waveguide section is 45-135 degrees. Preferably, the included angle is 90 °, that is, the curved waveguide segment is vertically connected to the end of the horizontal waveguide segment, that is, the curved waveguide segment is vertical to the substrate.
Preferably, the length of the curved waveguide section is 2 μm to 50 μm. And manufacturing the bent waveguide section with the length of 2-50 microns, namely the bent waveguide section optical antenna unit.
Further, in order to reduce the transmission loss of the outgoing light in the curved waveguide segment, the manufacturing method may further include step S5', depositing a low refractive index film on the surface of the curved waveguide segment by using a vacuum deposition method. The low refractive index film may be one of silicon oxide, hafnium oxide, aluminum oxide, silicon nitride, silicon oxynitride to better confine the light to the curved waveguide segment. It should be noted that, the deposition of the low refractive index film on the surface of the curved waveguide segment means that the low refractive index film is deposited on the surface of all the curved waveguide segments.
Further, in order to improve the directivity of the outgoing light, the manufacturing method may further include step S6', manufacturing a micro lens for shaping the outgoing light beam on the tip of the end of the curved waveguide section, and shaping the outgoing light beam. It should be noted that, the fabricating a microlens on the top of the curved waveguide segment means fabricating a microlens on the top of all the curved waveguide segments.
The sequence of steps S5 ' and S6 ' may be reversed, and this is merely for illustration and the sequence of steps S5 ' is not limited.
The chip type optical antenna for laser phase control scanning is characterized in that light passing through a phase shift array is transmitted to the tail end of a bent silicon waveguide antenna unit along a waveguide and then directly emitted out. It is not like wiener optical antenna, and needs to be emitted by means of structural scattering; the waveguide grating antenna array is not like a waveguide grating antenna array, and the waveguide grating antenna array is emitted by means of momentum matching provided by the grating; therefore, the light output efficiency is high, and far-field side lobe stray light is less after coherent synthesis. And the manufacturing method of the invention is compatible with the CMOS process, and is beneficial to batch production.
One or more preferred embodiments of the present invention are disclosed, and modifications and variations such as those derived from the technical spirit of the present invention may be easily introduced by those skilled in the art without departing from the scope of the present invention. The embodiments all work in the near infrared band, but can be completely popularized to the bands of terahertz, visible light and the like.
Claims (10)
1. A method for manufacturing a chip-type optical antenna for laser phase-controlled scanning, the method comprising:
providing a substrate;
manufacturing a planar optical waveguide on the substrate; wherein the planar optical waveguide comprises a first portion and a second portion connected;
carrying out wet etching and ion implantation on the second part to enable the second part to bend towards the side away from the substrate to form a bent waveguide section; while the first portion forms a horizontal waveguide section, the horizontal waveguide section and the curved waveguide section together forming a curved optical waveguide.
2. The manufacturing method according to claim 1, characterized in that the method specifically comprises:
processing the second part by using a wet etching process to manufacture a cantilever beam;
implanting ions at a preset position of the cantilever beam by using an ion implantation process to generate tensile stress, and bending the cantilever beam to one side back to the substrate under the action of the tensile stress to form a bent waveguide section; while the first portion forms a horizontal waveguide segment.
3. The manufacturing method according to claim 1, characterized in that the method specifically comprises:
implanting ions at a preset position of the second part by using an ion implantation process to generate tensile stress;
processing the second part by using a wet etching process, wherein the second part is bent to the side away from the substrate due to the release of tensile stress in the wet etching process to form a bent waveguide section; while the first portion forms a horizontal waveguide segment.
4. The fabrication method of claim 1, wherein fabricating a planar optical waveguide on the substrate specifically comprises:
coating photoresist on the substrate, and exposing the photoresist to form a pattern of the planar optical waveguide;
and etching the substrate to form the planar optical waveguide by using the pattern formed by the photoresist as a mask.
5. The method according to any one of claims 1 to 4, wherein a plurality of the planar optical waveguides are formed on the substrate, and the plurality of the planar optical waveguides are spaced apart from each other so that the plurality of curved waveguide sections are two-dimensionally arranged.
6. The method of manufacturing of claim 5, further comprising: and depositing a low-refractive-index thin film on the surface of the curved waveguide section.
7. The method of manufacturing of claim 6, further comprising: at the end of the curved waveguide section, a lens for shaping the outgoing light beam is made.
8. The method of claim 5, wherein an angle between said horizontal waveguide section and said curved waveguide section is 45 ° to 135 °.
9. The method of claim 8, wherein the length of the curved waveguide segment is between 2 μm and 50 μm.
10. The chip type optical antenna for laser phase control scanning is characterized by comprising a substrate and a curved optical waveguide arranged on the substrate, wherein the curved optical waveguide comprises a horizontal waveguide section positioned on the substrate and a curved waveguide section connected to the tail end of the horizontal waveguide section, and the curved waveguide section extends towards one side departing from the substrate and forms a certain included angle with the horizontal waveguide section.
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