CN111256857A - Method for monitoring temperature of chuck of probe station by testing voltage of BJT emission junction - Google Patents
Method for monitoring temperature of chuck of probe station by testing voltage of BJT emission junction Download PDFInfo
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- CN111256857A CN111256857A CN202010115918.6A CN202010115918A CN111256857A CN 111256857 A CN111256857 A CN 111256857A CN 202010115918 A CN202010115918 A CN 202010115918A CN 111256857 A CN111256857 A CN 111256857A
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- temperature
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- chuck
- emitter junction
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
Abstract
The invention provides a method for monitoring the temperature of a chuck of a probe station by testing the voltage of a BJT emitter junction, wherein the whole test wafer is divided into different regions according to the transverse direction and the longitudinal direction, and a BJT device is distributed in each region; placing a test wafer on a chuck of a probe station, and carrying out emitter junction voltage test on BJT devices in different areas on the test wafer according to the sensitivity of the BJT devices to temperature; drawing the emitter junction voltages of different areas on the whole test wafer obtained by testing into a data graph according to the area where the BJT device is located; and calculating the temperature distribution of the chuck according to the relation between the emitter junction voltage and the temperature. The invention utilizes the sensitivity of the BJT device to the temperature, and the voltage value of the BJT emitting junction changes by about 1.8mV when the temperature changes by 1 ℃. Therefore, when the temperature of the Chuck of the probe station slightly changes, the temperature of the Chuck of the probe station can be obviously reflected on the voltage value of the emitting junction of the BJT, and the temperature uniformity of the Chuck of the probe station can be judged through analyzing the voltage value of the emitting junction.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a method for monitoring the temperature of a chuck of a probe station by testing the voltage of a BJT emission junction.
Background
At present, the field of integrated circuit manufacturing widely uses a probe station for testing, the probe station used herein is a model of TELPRECIO, and two methods are available in the market for measuring the temperature of a Chuck (Chuck) of the probe station.
The first method is to measure the temperature by using a temperature sensor built in the chunk of the probe station, as shown in fig. 1, which has the advantage of measuring the temperature of the chunk of the probe station in real time. However, this method has some disadvantages: (1) the temperature sensor is only set in a small area, and cannot measure the temperature of all positions of the probe station Chuck. (2) The temperature sensor processes the temperature of a plurality of points and finally only displays one temperature on the panel of the probe station, so that the temperature uniformity of the chunk of the probe station cannot be judged. (3) When the probe station is abnormal, the temperature value calculated and processed by the temperature sensor may have a problem, which is not the true temperature of the probe station Chuck.
The second method is to use a thermistor temperature tester commonly used in the market to measure the temperature of each position of the probe card Chuck, as shown in fig. 2, which is a real diagram of the thermistor temperature tester, and this method has the advantages that the temperature of the probe card Chuck can be measured accurately according to the needs of the user, but this method also has some disadvantages: (1) one thermistor temperature tester can only measure the temperature of one point at a time, and a plurality of thermistors are needed to be purchased to measure the temperature of multiple points, so that the cost is overhigh. (2) Because the machine door needs to be opened and placed on the Chuck when the thermistor temperature tester is used every time, a large amount of water vapor enters the machine due to frequent opening and closing of the machine door, and when the low temperature is measured, the machine door can be opened only by restoring the probe station to the normal temperature if the point change measurement is needed, so that a large amount of time is wasted when the temperature is increased or decreased. (3) The method is completely manual, low in efficiency and standardization degree, low in measurement accuracy and long in time consumption.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention provides a method for monitoring the temperature of a chuck of a probe station by testing the voltage of a BJT emitter junction, which is used to solve the problems of low accuracy, low efficiency and standardization, and long measurement time of the temperature distribution of the chuck of the probe station in the prior art.
To achieve the above and other related objects, the present invention provides a method for monitoring the chuck temperature of a probe station by testing the BJT emitter junction voltage, the method comprising at least the following steps:
step one, providing a test wafer, wherein the whole test wafer is divided into different regions according to the transverse direction and the longitudinal direction, and BJT devices are distributed in each region;
secondly, placing the test wafer on a chuck of a probe station, and carrying out emitter junction voltage test on the BJT devices in different areas on the test wafer according to the sensitivity of the BJT devices to temperature;
step three, drawing the emitter junction voltage of different areas on the whole test wafer obtained by testing into a data graph according to the area where the BJT device is located;
and step four, providing a relational expression of the emitter junction voltage and the temperature of the BJT device, and calculating the temperature distribution of the chuck according to the relational expression of the emitter junction voltage and the temperature.
Preferably, the method further comprises a fifth step of performing a temperature sampling test on different areas of the chuck, and comparing the sampling test result with the temperature of the corresponding area on the chuck obtained in the fourth step.
Preferably, in the fifth step, a thermistor temperature tester is used for performing temperature sampling tests on different areas of the chuck.
Preferably, the BJT devices distributed in each region on the test wafer in the first step are NPN transistors.
Preferably, the BJT device emitting junction voltage and temperature relationship in step four being the NPN transistor is: y ═ 0.0018X +0.7736, where Y denotes emitter junction voltage and X denotes temperature.
Preferably, the BJT devices distributed in each region on the test wafer in the first step are PNP transistors.
Preferably, the relation between the emitter junction voltage and the temperature of the BJT device which is the PNP transistor in the fourth step is as follows: Y-0.0017X-0.7739, where Y represents emitter junction voltage and X represents temperature.
Preferably, in the second step, an SMU measuring unit is disposed on the probe station, and the precision of the SMU measuring unit is 2 uV.
As described above, the method for monitoring the chuck temperature of the probe station by testing the BJT emitter junction voltage according to the present invention has the following advantages: the invention utilizes the sensitivity of the BJT device to the temperature, and the voltage value of the BJT emitting junction changes by about 1.8mV when the temperature changes by 1 ℃. Therefore, when the temperature of the Chuck of the probe station slightly changes, the temperature of the Chuck of the probe station can be obviously reflected on the voltage value of the emitting junction of the BJT, and the temperature uniformity of the Chuck of the probe station can be judged through analyzing the voltage value of the emitting junction.
Drawings
FIG. 1 is a schematic diagram showing the location of a temperature sensor on a prior art chuck;
FIG. 2 is a diagram showing a thermistor temperature tester in the prior art;
FIG. 3 is a graph showing the VBE of an NPN transistor according to the present invention;
FIG. 4 is a graph showing the trend of the VBE value of the PNP transistor along with the temperature variation in the present invention;
FIG. 5 is a VBE value distribution diagram of each region of a complete wafer according to the present invention;
FIG. 6 is a schematic diagram showing the temperature distribution of 9 zones of the chuck of the probe station according to the present invention;
FIG. 7 is a graph showing a distribution of VBE values including 9 regions on the wafer of FIG. 6.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 3 to 7. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
The invention provides a method for monitoring the chuck temperature of a probe station by testing the voltage of a BJT emitter junction, which at least comprises the following steps:
step one, providing a test wafer, wherein the whole test wafer is divided into different regions according to the transverse direction and the longitudinal direction, and BJT devices are distributed in each region; as shown in fig. 5, fig. 5 is a VBE value distribution diagram of each region of the complete wafer according to the present invention, wherein a region not containing a VBE (emitter junction voltage of BJT device) value corresponds to a region of the test wafer divided horizontally and vertically. Further, the BJT devices distributed in each region on the test wafer in the first step are NPN transistors. For an NPN tube, the NPN tube is formed by two N-type semiconductors in a manner that a P-type semiconductor is clamped between the two N-type semiconductors, a PN junction formed between an emitter region and a base region is called an emitter junction, a PN junction formed between a collector region and the base region is called a collector junction, three leads are respectively called an emitter e (emitter), a base b (base) and a collector c (collector), and the emitter junction voltage VBE: the voltage VBE is the emitter junction voltage when the transistor is in the on state, and is mainly determined by the barrier height of the emitter junction, which depends on the semiconductor doping concentration and temperature. For Si-BJTs, VBE is typically 0.6V to 0.7V.
When the ambient temperature rises, the fermi level of the semiconductor is shifted to the middle of the forbidden band, the forbidden band width is also narrowed, and the barrier height of the emitter junction of the transistor is equal to the difference between the fermi levels of the P-type and N-type semiconductors, so that the barrier height of the emitter junction is reduced along with the rise of the temperature, thereby leading to the reduction of the VBE value (i.e. the emitter junction voltage has a negative temperature coefficient). The temperature coefficient of the emitter junction voltage is the same as that of the forward voltage of a general PN junction, namely, the Si-BJT emitter junction is about-2 mV/K, the Ge-BJT emitter junction is about-1 mV/K, the following graph 4 shows the temperature dependence of VBE values of a common BJT device, for example, the coefficient of variation of the VBE value of an NPN type transistor along with the temperature in the graph 3 is-1.8 mV/K, and the coefficient of variation of the VBE value of a PNP type transistor along with the temperature in the graph 4 is-1.7 mV/K, and the temperature uniformity of a Chuck (Chuck) of a probe station can be judged according to the difference situation of the measured VBE values.
Secondly, placing the test wafer on a chuck of a probe station, and carrying out emitter junction voltage test on the BJT devices in different areas on the test wafer according to the sensitivity of the BJT devices to temperature; furthermore, the SMU measuring unit is arranged on the probe station in the second step, and the precision of the SMU measuring unit is 2 uV. At present, a high-precision SMU measuring unit is arranged at a testing end of a probe station, the precision can reach 2uV, and the precision is enough to detect the difference of measured values of BJT devices caused by temperature change.
Step three, drawing the emitter junction voltage of different areas on the whole test wafer obtained by testing into a data graph according to the area where the BJT device is located; in the step, a BJT VBE test is carried out by using a test wafer, a VBE data graph obtained by the whole wafer test is drawn, as shown in FIG. 5, the VBE value at the upper left of the wafer is smaller, the VBE value at the lower right of the wafer is larger, and the temperature of a Chuck of a probe station can be judged to be gradually increased from the upper left to the lower right according to the sensitivity of the BJT device to the temperature.
And step four, providing a relational expression of the emitter junction voltage and the temperature of the BJT device, and calculating the temperature distribution of the chuck according to the relational expression of the emitter junction voltage and the temperature. Furthermore, the relation between the emitter junction voltage and the temperature of the BJT device which is the NPN transistor in the fourth step is as follows: y ═ 0.0018X + 0.7736. Where Y represents the emitter junction voltage and X represents temperature.
In this step, the VBE values are converted into corresponding temperature values according to the VBE values of different regions on the wafer in fig. 5 and the relationship between the emitter junction voltage and the temperature of the BJT device of the NPN transistor, so that the temperatures of the corresponding regions can be obtained according to the VBE values of the different regions on the wafer, and accordingly, the temperature distribution of the entire chuck can be obtained.
The method further comprises a fifth step of carrying out temperature sampling test on different areas of the chuck and comparing the sampling test result with the temperature of the corresponding area on the chuck obtained in the fourth step. Referring to FIG. 6, FIG. 6 is a schematic diagram showing the temperature distribution of 9 zones of the chuck of the probe station according to the present invention. In the fifth step, a thermistor temperature tester is used for performing temperature sampling test on different areas of the chuck. The 9 zones shown in fig. 6 were selected, and the temperature measurement results of the 9 zones are shown in table 1:
referring also to FIG. 7, FIG. 7 is a graph including a distribution of VBE values for 9 regions on the wafer of FIG. 6. The temperature distribution of the probe station measured in the table 1 is the same as the temperature distribution reflected by the BJT VBE value, the feasibility and the accuracy of the method are proved, and the temperature abnormity of the Chuck of the probe station can be detected.
The present invention further provides another embodiment, which is different from the above embodiment in that the BJT devices distributed on each region of the test wafer in the first step of the present invention are PNP transistors. Further, the relation between the emitter junction voltage and the temperature of the BJT device having the PNP transistor in the fourth step is as follows: Y-0.0017X-0.7739, where Y represents emitter junction voltage and X represents temperature. As shown in fig. 4, fig. 4 is a graph showing the trend of the VBE value of the PNP transistor according to the present invention.
In summary, the present invention utilizes the sensitivity of the BJT device to temperature, and the voltage value of the BJT emitter junction will change by about 1.8mV every time the temperature changes by 1 ℃. Therefore, when the temperature of the Chuck of the probe station slightly changes, the temperature of the Chuck of the probe station can be obviously reflected on the voltage value of the emitting junction of the BJT, and the temperature uniformity of the Chuck of the probe station can be judged through analyzing the voltage value of the emitting junction. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (8)
1. A method for monitoring the chuck temperature of a probe station by testing the BJT emitter junction voltage, the method comprising at least the steps of:
step one, providing a test wafer, wherein the whole test wafer is divided into different regions according to the transverse direction and the longitudinal direction, and BJT devices are distributed in each region;
secondly, placing the test wafer on a chuck of a probe station, and carrying out emitter junction voltage test on the BJT devices in different areas on the test wafer according to the sensitivity of the BJT devices to temperature;
step three, drawing the emitter junction voltage of different areas on the whole test wafer obtained by testing into a data graph according to the area where the BJT device is located;
and step four, providing a relational expression of the emitter junction voltage and the temperature of the BJT device, and calculating the temperature distribution of the chuck according to the relational expression of the emitter junction voltage and the temperature.
2. The method of claim 1, wherein the method comprises monitoring the chuck temperature of the probe station by testing the BJT emitter junction voltage, further comprising: the method also comprises a fifth step of carrying out temperature sampling test on different areas of the chuck and comparing the sampling test result with the temperature of the corresponding area on the chuck obtained in the fourth step.
3. The method of claim 2, wherein the method comprises monitoring the chuck temperature of the probe station by testing the BJT emitter junction voltage, further comprising: and fifthly, carrying out temperature sampling test on different areas of the chuck by using a thermistor temperature tester.
4. The method of claim 3, wherein the method comprises monitoring the chuck temperature of the probe station by testing the BJT emitter junction voltage, further comprising: the BJT devices distributed in each area on the test wafer in the step one are NPN transistors.
5. The method of claim 4, wherein the method comprises monitoring the chuck temperature of the probe station by testing the BJT emitter junction voltage, further comprising: the relation between the emitter junction voltage and the temperature of the BJT device which is the NPN transistor in the fourth step is as follows: y ═ 0.0018X +0.7736, where Y denotes emitter junction voltage and X denotes temperature.
6. The method of claim 3, wherein the method comprises monitoring the chuck temperature of the probe station by testing the BJT emitter junction voltage, further comprising: the BJT devices distributed in each area on the test wafer in the step one are PNP type transistors.
7. The method of claim 6, wherein the method comprises monitoring the chuck temperature of the probe station by testing the BJT emitter junction voltage, further comprising: the relation between the emitter junction voltage and the temperature of the BJT device with the PNP transistor in the fourth step is as follows: Y-0.0017X-0.7739, where Y represents emitter junction voltage and X represents temperature.
8. The method of claim 1, wherein the method comprises monitoring the chuck temperature of the probe station by testing the BJT emitter junction voltage, further comprising: and step two, an SMU measuring unit is arranged on the probe station, and the precision of the SMU measuring unit is 2 uV.
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| CN202010115918.6A CN111256857A (en) | 2020-02-25 | 2020-02-25 | Method for monitoring temperature of chuck of probe station by testing voltage of BJT emission junction |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112212994A (en) * | 2020-09-25 | 2021-01-12 | 电子科技大学 | Temperature distribution detection device for plasma etching wafer |
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Application publication date: 20200609 |