CN111244218B - Solar cell and preparation method thereof - Google Patents

Solar cell and preparation method thereof Download PDF

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CN111244218B
CN111244218B CN201811446260.6A CN201811446260A CN111244218B CN 111244218 B CN111244218 B CN 111244218B CN 201811446260 A CN201811446260 A CN 201811446260A CN 111244218 B CN111244218 B CN 111244218B
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solar cell
light guide
metal electrode
light guiding
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CN111244218A (en
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罗轶
周伟东
李琳琳
宋士佳
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Zishi Energy Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The invention provides a solar cell and a preparation method thereof. The solar cell comprises a substrate, an epitaxial layer and a metal electrode which are sequentially arranged from bottom to top, and further comprises a light guide structure arranged on the surface of the metal electrode, which is far away from the epitaxial layer, wherein the light guide structure comprises at least two layers of light guide layers which are sequentially overlapped along the direction far away from the metal electrode, and the refractive indexes of the light guide layers along the direction far away from the metal electrode are sequentially increased. The light guide structure is arranged on the metal electrode of the solar cell, and the refractive index of the light guide layer of the light guide structure is sequentially increased along the direction far away from the metal electrode, so that sunlight projected on the metal electrode can be guided to the position where light can be absorbed through the refraction of light, and the sunlight which is not absorbed originally is utilized, and the utilization efficiency of the light on the unit area of the solar cell is effectively improved.

Description

Solar cell and preparation method thereof
Technical Field
The invention relates to the field of solar cells, in particular to a solar cell and a preparation method thereof.
Background
GaAs has a forbidden band width of 1.43eV, and is one of the most preferable materials for absorbing sunlight. The solar cell prepared from gallium arsenide has the characteristics of high conversion efficiency, good temperature characteristic, strong radiation resistance and the like, and the GaAs solar cell is more and more widely applied along with the development of Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE) and other technologies.
The fabrication of a gallium arsenide solar cell chip is generally to fabricate a front electrode after the preparation of an epitaxial layer structure, wherein the front electrode is usually a metal electrode with good conductivity such as gold, silver, copper, aluminum, and the like, so as to achieve the purposes of collecting current and conducting the cell. The front electrode layout is designed as required and occupies about 5% of the area of the battery chip. Because the metal electrode is opaque, sunlight projected on the front electrode of the cell chip cannot be utilized, which reduces the utilization efficiency of light per unit area of the gallium arsenide solar cell.
Disclosure of Invention
The invention mainly aims to provide a solar cell and a preparation method thereof, and aims to solve the problem of low light utilization rate per unit area of the solar cell in the prior art.
In order to achieve the above object, according to one aspect of the present invention, there is provided a solar cell including a substrate, an epitaxial layer, and a metal electrode sequentially disposed from bottom to top, the solar cell further including a light guide structure disposed on a surface of the metal electrode away from the epitaxial layer, the light guide structure including at least two light guide layers sequentially stacked in a direction away from the metal electrode, and refractive indices of the light guide layers sequentially increasing in a direction away from the metal electrode.
Further, the above light guide structure includes: the first light guide layer is arranged on the surface of the metal electrode far away from the epitaxial layer; and the second light guide layer is arranged on the surface of the first light guide layer far away from the metal electrode, and the refractive index of the first light guide layer is smaller than that of the second light guide layer.
The refractive index of the first optical guide layer is 1.3 to 1.7, the thickness of the first optical guide layer is preferably 50 to 200nm, and the first optical guide layer is preferably a composite layer of one or more of a magnesium fluoride layer, an aluminum fluoride layer, a barium fluoride layer, a yttrium fluoride layer, a lanthanum fluoride layer, and a silicon oxide layer.
The refractive index of the second optical guide layer is between 1.7 and 2.05, the thickness of the second optical guide layer is between 50 and 200nm, and the second optical guide layer is a composite layer of one or more of a silicon nitride layer, a zirconium oxide layer, a hafnium oxide layer and a zinc oxide layer.
The light guide structure further comprises a third light guide layer, the third light guide layer is arranged on the surface, far away from the first light guide layer, of the second light guide layer, the refractive index of the third light guide layer is preferably 2.02-2.5, the thickness of the third light guide layer is further preferably 50-200 nm, and the third light guide layer is more preferably a composite layer of one or more of a titanium dioxide layer, a titanium pentoxide layer, a cerium oxide layer and a zinc sulfide layer.
Furthermore, a metal electrode is arranged on a part of the surface of the epitaxial layer, the other part of the surface of the epitaxial layer is exposed, the solar cell further comprises an antireflection layer and a third light guide layer, the antireflection layer is arranged on the exposed surface of the epitaxial layer, the third light guide layer is arranged on the surface, far away from the first light guide layer, of the second light guide layer, the refractive index of the antireflection layer is the same as that of the third light guide layer and is larger than that of the second light guide layer, preferably, the refractive index of the antireflection layer is 2.02-2.5, further preferably, the thickness of the antireflection layer is 50-200 nm, and more preferably, the antireflection layer is a composite layer of any one or more of a titanium dioxide layer, a three titanium pentoxide layer, a cerium oxide layer and a zinc sulfide layer.
Further, the solar cell is a silicon-based solar cell, a heterojunction solar cell or a compound semiconductor thin film type solar cell, preferably, the compound semiconductor thin film type solar cell is a gallium arsenide solar cell or a copper indium gallium selenide solar cell, and the epitaxial layer includes a single junction formed by a buffer layer, a back field layer, a base layer, an emission layer, a window layer and an ohmic contact layer which are sequentially far away from the substrate in an overlapping manner, or includes a plurality of single junctions connected by tunnel junctions.
Further, the substrate is a GaAs substrate, Ge substrate, or SiC substrate, and the metal electrode is preferably a gold electrode, a copper electrode, or a silver electrode.
According to another aspect of the present invention, there is provided a method of manufacturing a solar cell of any one of the above, the method comprising forming an epitaxial layer and a metal electrode on a substrate in this order, characterized in that the method further comprises providing a photoconductive structure on a surface of the metal electrode remote from the epitaxial layer, the photoconductive structure comprising at least two photoconductive layers stacked in this order in a direction away from the metal electrode, and refractive indices of the photoconductive layers increasing in this order in a direction away from the metal electrode.
Further, the process of providing the light guide structure on the surface of the metal electrode away from the epitaxial layer includes: arranging a mask layer on the epitaxial layer; a first light guide layer, a second light guide layer and a third light guide layer are sequentially arranged on the metal electrode; the process of removing the mask layer, setting an antireflection layer on the epitaxial layer, or setting a light guide structure on the surface of the metal electrode far away from the epitaxial layer includes: arranging a mask layer on the epitaxial layer; sequentially arranging a first light guide layer and a second light guide layer on the metal electrode; removing the mask layer, arranging a refraction material on the epitaxial layer and the second light guide layer to form a third light guide layer on the second light guide layer, and forming an antireflection layer on the epitaxial layer; preferably, the first light guide layer, the second light guide layer, the third light guide layer and the dioptric material are independently arranged by evaporation or sputtering.
By applying the technical scheme of the invention, the metal electrode of the solar cell is provided with the light guide structure, and the refractive indexes of the light guide layers of the light guide structure are sequentially increased along the direction far away from the metal electrode, so that sunlight projected on the metal electrode can be guided to the position where the sunlight can be absorbed through the refraction of light, and the sunlight which is not absorbed originally is utilized, and the utilization efficiency of the light on the unit area of the solar cell is effectively improved.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the invention and, together with the description, serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 shows a schematic diagram of a solar cell structure according to a preferred embodiment of the present invention; and
fig. 2 shows a schematic diagram of the transmission of light in the light guiding structure of the solar cell shown in fig. 1.
Wherein the figures include the following reference numerals:
10. a substrate; 20. an epitaxial layer; 30. a metal electrode; 41. a first light guide layer; 42. a second light guide layer; 43. a third light guide layer; 50. and (4) an antireflection layer.
Detailed Description
It should be noted that, in the present application, the embodiments and features of the embodiments may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
As analyzed by the background art of the present application, in the prior art, since the metal electrode is opaque, sunlight projected onto the metal electrode on the cell chip cannot be utilized, which reduces the utilization efficiency of light per unit area of the solar cell.
In an exemplary embodiment of the present application, there is provided a solar cell, as shown in fig. 1, the solar cell includes a substrate 10, an epitaxial layer 20, and a metal electrode 30, which are sequentially disposed from bottom to top, and a light guide structure disposed on a surface of the metal electrode 30 away from the epitaxial layer 20, the light guide structure including at least two light guide layers sequentially stacked in a direction away from the metal electrode 30, and refractive indexes of the light guide layers sequentially increasing in the direction away from the metal electrode 30.
The metal electrode 30 of the solar cell is provided with the light guide structure, and the refractive index of the light guide layer of the light guide structure is sequentially increased along the direction far away from the metal electrode 30, so that sunlight projected on the metal electrode 30 can be guided to the position where light can be absorbed through the refraction of light, and the sunlight which is not absorbed originally in the part is utilized (refer to fig. 2), and the utilization efficiency of the light on the unit area of the solar cell is effectively improved.
In one embodiment of the present application, as shown in fig. 1, the light guide structure preferably includes a first light guide layer 41 and a second light guide layer 42, where the first light guide layer 41 is disposed on a surface of the metal electrode 30 away from the epitaxial layer 20; the second photoconductive layer 42 is disposed on a surface of the first photoconductive layer 41 away from the metal electrode 30, and a refractive index of the first photoconductive layer 41 is smaller than a refractive index of the second photoconductive layer 42. The light guide structure has a simple structure, and the amount of sunlight entering the light absorption position can be effectively changed by adjusting the refractive index difference between the first light guide layer 41 and the second light guide layer 42, so that the utilization efficiency of light per unit area of the solar cell is improved.
The material for the first light guiding layer 41 of the present application may be various, and preferably, the refractive index of the first light guiding layer 41 is controlled to be 1.3-1.7, which is the lowest range of the currently common solid refractive index material, and in addition, in order to introduce as much long-wavelength band sunlight (380 nm-870 nm) as possible into the absorbable position, the thickness of the first light guiding layer 41 is preferably 50-200 nm. In order to better correspond to the material of the solar cell, it is preferable that the first light guide layer 41 is a composite layer of any one or more of a magnesium fluoride layer, an aluminum fluoride layer, a barium fluoride layer, a yttrium fluoride layer, a lanthanum fluoride layer, and a silicon oxide layer.
The material used for the first light guide layer 41 of the present application may be various, and it is preferable to control the refractive index of the second light guide layer 42 to be 1.7 to 2.05. In addition, in order to guide as much long-wavelength band sunlight (380nm to 870nm) as possible into the absorbable position in cooperation with the refractive index of the first light guiding layer 41, the thickness of the second light guiding layer 42 is preferably between 50nm and 200 nm. In order to better match the material of the first light guide layer 41, it is preferable that the second light guide layer 42 is a composite layer of any one or more of a silicon nitride layer, a zirconium oxide layer, a hafnium oxide layer, and a zinc oxide layer.
In another embodiment of the present invention, as shown in fig. 1, the light guide structure further includes a third light guide layer 43, the third light guide layer 43 is disposed on a surface of the second light guide layer 42 away from the first light guide layer 41, preferably, the refractive index of the third light guide layer 43 is between 2.02 and 2.5, further preferably, the thickness of the third light guide layer 43 is between 50 and 200nm, and more preferably, the third light guide layer 43 is a composite layer of one or more of a titanium dioxide layer, a titanium pentoxide layer, a cerium oxide layer, and a zinc sulfide layer. As shown in fig. 2, by providing the third light guide layer 43, the refraction angle of light is further increased, so that more light is guided to the absorbable position, and the utilization efficiency of light per unit area is further improved.
In another embodiment of the present application, it is preferable that a metal electrode 30 is disposed on a part of a surface of the epitaxial layer 20, another part of the surface is exposed, the solar cell further includes an antireflection layer 50 and a third light guiding layer 43, the antireflection layer 50 is disposed on the exposed surface of the epitaxial layer 20, the third light guiding layer 43 is disposed on a surface of the second light guiding layer 42 away from the first light guiding layer 41, a refractive index of the antireflection layer 50 is the same as a refractive index of the third light guiding layer 43 and is greater than a refractive index of the second light guiding layer 42, the refractive index of the antireflection layer 50 is preferably between 2.02 and 2.5, the thickness of the antireflection layer 50 is further preferably between 50 and 200nm, and the antireflection layer 50 is more preferably a composite layer of any one or more of a titanium dioxide layer, a tri-titanium pentoxide layer, a cerium oxide layer, and a zinc sulfide layer. The antireflection layer 50 is disposed on the light guide structure, and can also be used as a light guide layer to change the light path and improve the light utilization efficiency.
Of course, the number of the light guide layers in the light guide structure of the present application is not limited to the above two or three layers, and those skilled in the art can adjust the number of the light guide layers according to the area of the metal electrode, the area of the epitaxial layer, and the refractive index of each light guide layer, whether to several layers, within the protection scope of the present application.
The light guide structure of the present application can be used in a variety of solar cells, preferably silicon-based solar cells, heterojunction solar cells or compound semiconductor thin film type solar cells.
In a preferred embodiment, the compound semiconductor thin film type solar cell is a gallium arsenide solar cell or a copper indium gallium selenide solar cell, and the epitaxial layer 20 includes a single junction composed of a buffer layer, a back field layer, a base layer, an emission layer, a window layer, and an ohmic contact layer, which are stacked in this order away from the substrate 10, or includes a plurality of single junctions connected by a tunnel junction. That is, the solar cell may be a single-junction solar cell or a multi-junction solar cell.
The substrate 10 used for the above solar cell may be selected according to a specific solar type, and preferably, the above substrate 10 is a GaAs substrate, a Ge substrate, or a SiC substrate.
The metal electrode 30 used in the solar cell of the present application may be a metal electrode 30 commonly used in solar cells, and in order to improve the conductive effect, the metal electrode 30 is preferably a gold electrode, a copper electrode, or a silver electrode.
In another exemplary embodiment of the present application, there is provided a method for manufacturing a solar cell of any one of the above-mentioned solar cells, the method for manufacturing includes sequentially forming an epitaxial layer 20 and a metal electrode 30 on a substrate 10, and further includes providing a light guide structure on a surface of the metal electrode 30 away from the epitaxial layer 20, the light guide structure including at least two light guide layers sequentially stacked in a direction away from the metal electrode 30, and the light guide layers sequentially increasing in refractive index in the direction away from the metal electrode 30.
According to the preparation method, the light guide structure is arranged on the metal electrode 30 of the solar cell, and the refractive index of the light guide layer of the light guide structure is sequentially increased along the direction far away from the metal electrode 30, so that sunlight projected on the metal electrode 30 can be guided to the position where light can be absorbed through the refraction effect of light, and the sunlight which is not absorbed originally in the part is utilized (refer to fig. 2), and the utilization efficiency of the light on the unit area of the solar cell is effectively improved.
For those skilled in the art, reference may be made to the prior art for methods for manufacturing an epitaxial layer and a metal electrode of the solar cell, for example, epitaxial growth is used to form the epitaxial layer, which is not described herein again.
In one embodiment of the present application, the process of providing the light guide structure on the surface of the metal electrode away from the epitaxial layer 20 comprises: arranging a mask layer on the epitaxial layer; a first light guide layer 41, a second light guide layer 42 and a third light guide layer 43 are sequentially arranged on the metal electrode; the mask layer is removed and an antireflective layer 50 is provided on the epitaxial layer. In the above process, the third light guiding layer 43 and the antireflection layer 50 are formed in steps, and respective materials can be flexibly selected.
In another embodiment of the present application, the process of providing the light guide structure on the surface of the metal electrode 30 away from the epitaxial layer 20 comprises: arranging a mask layer on the epitaxial layer; a first light guide layer 41 and a second light guide layer 42 are sequentially disposed on the metal electrode 30; the mask layer is removed and a refractive material is disposed on the epitaxial layers 20 and 42 to form a third light guiding layer 43 on the second light guiding layer 42 and an anti-reflection layer 50 on the epitaxial layers 20. In the above process, the third light guiding layer 43 and the antireflection layer 50 are simultaneously formed, simplifying the manufacturing process.
The first light guide layer 41, the second light guide layer 42, the third light guide layer 43, and the dioptric material are preferably provided by vapor deposition or sputtering, respectively and independently.
The specific implementation process of the evaporation or sputtering may refer to the prior art, for example, a mask plate is used to cover a position where a first light guide layer is not required to be arranged, and then the first light guide layer material is used to perform evaporation or sputtering, and specific evaporation process parameters or sputtering process parameters may be adjusted according to thickness requirements on the basis of referring to the prior art, which is not described herein again. The technical effects of the present application will be further described below with reference to examples and comparative examples.
Example 1
1) And (3) conveying the Ge substrate into MOCVD equipment, and growing each epitaxial layer according to the following mode:
introducing Ge substrate into MOCVD equipment, and introducing H 2 Gas, cleaning the substrate at high temperature under 800 ℃;
epitaxially growing a back field layer of Al on the cleaned substrate 0.5 Ga 0.5 As, wherein the thickness of the back field layer is 100nm, and the growth temperature of the back field layer is 800 ℃;
growing a base layer on the back field layer, wherein the base layer is GaAs, the thickness of the base layer is 2000nm, and the growth temperature of the base layer is 800 ℃;
growing a C-doped GaAs emission layer on the base layer, wherein the thickness of the emission layer is 500 nm;
growing a window layer on the emitting layer, wherein the window layer is preferably Al 0.5 Ga 0.5 As, the thickness of the window layer is 100nm, and the growth temperature of the window layer is 800 ℃;
and growing a contact layer on the window layer, wherein the contact layer is a P-doped GaAs layer, the concentration of P doping is 1E20, the thickness of the contact layer is 100nm, and the growth temperature of the contact layer is 800 ℃.
2) Defining a metal electrode area on the epitaxial layer, covering the rest part with a mask, and manufacturing a metal electrode by evaporating gold;
3) a first photoconductive layer is formed on the metal electrode by vapor plating of magnesium fluoride (refractive index is 1.38) and the thickness is 120 nm;
4) a second optical guide layer is formed by evaporating hafnium oxide (with the refractive index of 1.95) on the first optical guide layer, and the thickness of the second optical guide layer is 90 nm;
5) removing the mask;
6) evaporating TiO on the surface of the metal electrode and the exposed epitaxial layer 2 (refractive index 2.35) to form a third photoconductive layer on the metal electrode and an antireflection layer on the surface of the exposed epitaxial layer to a thickness of 70 nm.
Example 2
The difference from embodiment 1 is that the first photoconductive layer is aluminum fluoride, and the refractive index is 1.35; the second photoconductive layer is zinc oxide and has a refractive index of 2.0.
Example 3
The difference from embodiment 1 is that the first photoconductive layer is lanthanum fluoride, and the refractive index is 1.58; the second photoconductive layer is made of zirconium oxide and has a refractive index of 2.05; the third photoconductive layer is cerium oxide and has a refractive index of 2.20.
Example 4
The difference from example 1 is that the first optical waveguide layer is 50nm thick.
Example 5
The difference from example 1 is that the first optical waveguide layer is 200nm thick.
Example 6
The difference from example 1 is that the second optical waveguide layer is 200nm thick.
Example 7
The difference from example 1 is that the second optical waveguide layer is 50nm thick.
Example 8
The difference from example 1 is that the third optical waveguide layer is 50nm thick.
Example 9
The difference from example 1 is that the third optical waveguide layer has a thickness of 200 nm.
Example 10
The difference from example 1 is that the second optical waveguide layer is 40nm thick.
Example 11
The difference from example 1 is that the first light guide layer has a thickness of 210 nm.
Example 12
The difference from embodiment 1 is that the third optical guide layer is not provided on the second optical guide layer, and only the titanium dioxide is provided on the exposed surface of the epitaxial layer.
Comparative example 1
The difference from embodiment 1 is that no light guide layer is provided and only the exposed surface of the epitaxial layer is provided with titanium dioxide.
The photoelectric conversion efficiency of the solar cells of the examples and the comparative examples was measured by the IV test, and the measurement results are shown in table 1.
TABLE 1
Figure BDA0001885780040000071
From the above description, it can be seen that the above-described embodiments of the present invention achieve the following technical effects:
the light guide structure is arranged on the metal electrode of the solar cell, and the refractive index of the light guide layer of the light guide structure is sequentially increased along the direction away from the metal electrode, so that sunlight projected on the metal electrode can be guided to the position where light absorption can be carried out through the refraction effect of light, and the sunlight which is not absorbed originally in the part is utilized, and the utilization efficiency of the light on the unit area of the solar cell is effectively improved.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (21)

1. A solar cell comprising a substrate (10), an epitaxial layer (20) and a metal electrode (30) arranged in this order from bottom to top, characterized in that the solar cell further comprises a light guiding structure arranged on the surface of the metal electrode (30) remote from the epitaxial layer (20), the light guiding structure comprising at least two light guiding layers stacked in this order in the direction remote from the metal electrode (30), and the light guiding layers having refractive indices increasing in this order in the direction remote from the metal electrode (30); the light guide structure includes:
a first photoconductive layer (41) disposed on a surface of the metal electrode (30) distal from the epitaxial layer (20);
a second light guide layer (42) disposed on a surface of the first light guide layer (41) away from the metal electrode (30), a refractive index of the first light guide layer (41) being less than a refractive index of the second light guide layer (42);
the metal electrode (30) is arranged on part of the surface of the epitaxial layer (20), and the other part of the surface is exposed, the solar cell further comprises an antireflection layer (50) and a third light guide layer (43), the antireflection layer (50) is arranged on the exposed surface of the epitaxial layer (20), the third light guide layer (43) is arranged on the surface of the second light guide layer (42) far away from the first light guide layer (41), and the refractive index of the antireflection layer (50) and the refractive index of the third light guide layer (43) are the same and are both greater than the refractive index of the second light guide layer (42).
2. The solar cell according to claim 1, wherein the refractive index of the first light guiding layer (41) is between 1.3 and 1.7.
3. The solar cell according to claim 2, wherein the first light guiding layer (41) has a thickness of 50-200 nm.
4. The solar cell according to claim 3, wherein the first light guide layer (41) is a composite layer of any one or more of a magnesium fluoride layer, an aluminum fluoride layer, a barium fluoride layer, a yttrium fluoride layer, a lanthanum fluoride layer, and a silicon oxide layer.
5. The solar cell according to claim 1, wherein the refractive index of the second light guiding layer (42) is between 1.7 and 2.05.
6. The solar cell according to claim 5, wherein the thickness of the second light guiding layer (42) is between 50 and 200 nm.
7. The solar cell according to claim 6, wherein the second light guide layer (42) is a composite layer of any one or more of a silicon nitride layer, a zirconium oxide layer, a hafnium oxide layer and a zinc oxide layer.
8. The solar cell according to any of claims 1 to 7, characterized in that the light guiding structure further comprises a third light guiding layer (43), the third light guiding layer (43) being arranged on a surface of the second light guiding layer (42) remote from the first light guiding layer (41).
9. The solar cell according to claim 8, wherein the refractive index of the third light guiding layer (43) is between 2.02 and 2.5.
10. The solar cell according to claim 9, wherein the thickness of the third light guiding layer (43) is between 50 and 200 nm.
11. The solar cell according to claim 10, wherein the third optical guiding layer (43) is a composite layer of any one or more of a titanium dioxide layer, a titanium pentoxide layer, a cerium oxide layer and a zinc sulfide layer.
12. Solar cell according to any of claims 1 to 11, characterized in that the refractive index of the anti-reflective layer (50) is between 2.02 and 2.5.
13. The solar cell according to claim 12, wherein the thickness of the anti-reflective layer (50) is between 50 and 200 nm.
14. The solar cell according to claim 13, wherein the anti-reflective layer (50) is a composite layer of any one or more of a titanium dioxide layer, a tri-titanium pentoxide layer, a cerium oxide layer and a zinc sulfide layer.
15. The solar cell according to claim 1, wherein the solar cell is a silicon-based solar cell, a heterojunction solar cell or a compound semiconductor thin film type solar cell.
16. The solar cell according to claim 15, wherein the compound semiconductor thin film type solar cell is a gallium arsenide solar cell or a copper indium gallium selenide solar cell, and the epitaxial layer (20) comprises a single junction composed of a buffer layer, a back field layer, a base layer, an emission layer, a window layer and an ohmic contact layer, which are stacked in this order away from the substrate (10), or comprises a plurality of the single junctions connected by a tunnel junction.
17. Solar cell according to claim 1, characterized in that the substrate (10) is a GaAs substrate, a Ge substrate or a SiC substrate.
18. Solar cell according to claim 17, characterized in that the metal electrode (30) is a gold electrode, a copper electrode or a silver electrode.
19. A method of manufacturing a solar cell according to any one of claims 1 to 18, comprising forming an epitaxial layer (20) and a metal electrode (30) in sequence on a substrate (10), wherein the method further comprises providing a light guiding structure on a surface of the metal electrode (30) remote from the epitaxial layer (20), the light guiding structure comprising at least two light guiding layers stacked in sequence in a direction remote from the metal electrode (30), and the light guiding layers having refractive indices increasing in sequence in a direction remote from the metal electrode (30).
20. A method according to claim 19, wherein the step of providing a light guiding structure on the surface of the metal electrode remote from the epitaxial layer (20) comprises:
a mask layer is arranged on the epitaxial layer;
a first light guide layer (41), a second light guide layer (42) and a third light guide layer (43) are sequentially arranged on the metal electrode;
removing the mask layer, arranging an antireflection layer (50) on the epitaxial layer,
or the process of arranging the light guide structure on the surface of the metal electrode (30) far away from the epitaxial layer (20) comprises the following steps:
a mask layer is arranged on the epitaxial layer;
a first light guide layer (41) and a second light guide layer (42) are sequentially arranged on the metal electrode (30);
and removing the mask layer, and arranging a refractive material on the epitaxial layer (20) and the second light guide layer (42) to form a third light guide layer (43) on the second light guide layer (42) and form an antireflection layer (50) on the epitaxial layer (20).
21. The manufacturing method according to claim 20, wherein the first light guiding layer (41), the second light guiding layer (42), the third light guiding layer (43) and the refractive material are independently disposed by evaporation or sputtering.
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