CN111244195A - 一种微米间隙异面叉指式光电导开关 - Google Patents
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Abstract
本发明公开了一种微米间隙异面叉指式光电导开关,包括衬底,衬底上镀有离子溅射钝化层,衬底中纵向穿插连接叉指电极,叉指电极两个极板均分别连接传输线;本发明使用小间隙的异面叉指式电极,易于触发光能分布均匀和解决触发光脉冲的同步性问题。异面叉指式电极结构替代传统横向电极结构,在光电导开关内通过激光级联触发形成多通道载流子输运,分散丝状电流分布,从而来均匀光电导开关内的瞬态工作电场,提高开关的耐压能力。
Description
技术领域
本发明属于电气工程设备技术领域,具体涉及一种微米间隙异面叉指式光电导开关。
背景技术
半绝缘GaAs PCSS的应用基础研究进入了以不同的组合形式来满足功率、重复频率、电脉冲宽度在不同需求背景下的研究阶段,并致力于探索强电场下弱光诱发的PCSS非线性工作模式,在特定条件下对应的物理机制。然而,非线性工作模式下产生的丝状电流导致GaAs PCSS的功率容量小和低寿命依然是需要解决的难题。对于GaAs PCSS丝状电流产生导致开关寿命低的问题,可以通过改变GaAs PCSS采用的结构和材料来加以改善。GaAsPCSS开关电极的几何位置可以分为横向电极和纵向电极,开关电极可以分为横向对置、异面对置、叉指等多种结构。横向对置电极结构的GaAs PCSS工作在非线性条件下时,虽然有载流子雪崩倍增效应可以形成强电流,但其非线性模式电流波形的“锁定效应”,却容易引发强烈的丝状电流,使开关的使用寿命下降,很难被应用到更高电场条件下,极大地限制了PCSS技术的发展。异面对置电极结构,其两个电极必须有一个是透明的,才能保证激光能接触到衬底,增加了制作工艺难度。而横向叉指电极,虽然能有效解决电流丝导致的沿面闪络问题,但如果开关尺寸过大,会导致触发激光的光斑无法覆盖整个电极结构。
发明内容
本发明的目的是提供一种微米间隙异面叉指式光电导开关,解决了光导开关在高电场下易被击穿而导致其寿命低,影响在更高电场下的应用问题。
本发明所采用的技术方案是,一种微米间隙异面叉指式光电导开关,包括衬底,衬底上镀有离子溅射钝化层,衬底中纵向穿插连接叉指电极,叉指电极两个极板均分别连接传输线。
本发明的特点还在于:
叉指电极的宽度和间隙均为5μm。
叉指电极阵列边长为3mm。
叉指电极的制备过程为:将衬底置于三氯乙烯、丙酮、甲醇以任意比混合溶液中在超声波浴中清洗,将光刻胶旋涂,待光刻胶固化后,将涂有光刻胶的衬底转移至紫外光刻机上,在样品表面曝光60s后,将光掩膜版叉指图形放置衬底上,在表面先蒸发沉积一层厚度为5nm的Cr层,再蒸发沉积一层厚度为200nm的Au电极层,即得到叉指电极。
离子溅射钝化层为560nm的Si3N4离子溅射钝化层。
每个叉指电极极板与传输线之间通过引线连接。
引线采用金丝热压焊连接在传输线触点与叉指电极电极极板上。
衬底为半绝缘GaAs。
半绝缘GaAs暗态电阻率为5×107Ω·cm,电子迁移率为7000-8000cm2/(V·s)。
离子溅射钝化层厚度为560nm。
本发明的有益效果是:
本发明一种微米间隙异面叉指式光电导开关,使用小间隙的异面叉指式电极,易于触发光能分布均匀和解决触发光脉冲的同步性问题。异面叉指式电极结构替代传统横向电极结构,在光电导开关内通过激光级联触发形成多通道载流子输运,分散丝状电流分布,从而来均匀光电导开关内的瞬态工作电场,提高开关的耐压能力。
附图说明
图1是本发明一种微米间隙异面叉指式光电导开关的结构示意图;
图2是本发明中叉指电极结构示意图;
图3是单次触发稳定波形图;
图4是1kHz重复频率下触发的稳定波形图。
1.衬底,2.离子溅射钝化层,3.叉指电极,4.引线,5.传输线。
具体实施方式
下面结合附图和具体实施方式对本发明进行详细说明。
本发明采用一种微米间隙异面叉指式光电导开关,如图1所示,包括衬底1,衬底1上镀有离子溅射钝化层2,衬底1中纵向穿插连接叉指电极3,叉指电极3两个极板均分别连接传输线5。
叉指电极3的宽度和间隙均为5μm。
叉指电极3阵列边长为3mm。
叉指电极3的制备过程为:将衬底置于三氯乙烯、丙酮、甲醇以任意比混合溶液中在超声波浴中清洗,将光刻胶旋涂,待光刻胶固化后,将涂有光刻胶的衬底转移至紫外光刻机上,在样品表面曝光60s后,将光掩膜版叉指图形放置衬底上,在表面先蒸发沉积一层厚度为5nm的Cr层,再蒸发沉积一层厚度为200nm的Au电极层,即得到叉指电极。
离子溅射钝化层2为560nm的Si3N4离子溅射钝化层,能够提高耐压。
每个叉指电极3极板与传输线5之间通过引线4连接。
引线4采用金丝热压焊连接在传输线5触点与叉指电极3电极极板上。
衬底1为半绝缘GaAs,GaAs的电子迁移率非常高且载流子寿命短,所以响应速度快,工作频率高。此外,相对于InP和宽禁带半导体材料,GaAs材料从单晶拉制到后工艺处理方法都已较完善,通过杂质工程和能带工程现已可精确地控制GaAs材料的杂质品种和数量的空间分布、电阻率及少数载流子的寿命。
半绝缘GaAs暗态电阻率为5×107Ω·cm,电子迁移率为7000-8000cm2/(V·s)。
离子溅射钝化层2厚度为560nm。
本发明一种微米间隙异面叉指式光电导开关的工作原理为:在没有用激光进行照射的暗态条件下,光电导开关中只有数目极少的本征载流子,因此漏电流非常小,相当于开关处于断开状态。在电极偏置电压情况下,当用超短激光脉冲(对应波长的光子能量大于GaAs禁带宽度能量)照射开关两电极之间的缝隙时,根据内光电效应,半导体材料吸收入射光子使价带的电子被激发到导带,产生大量光生载流子参与导电(每个入射光子最多产生一个电子-空穴对参与导电)。此时光电导开关的电阻率迅速下降,进入瞬态导通状态。当激光停止照射后,光电导开关中光生载流子由于被电极吸收或复合而在极短的时间内消失,开关又恢复到断开状态,这个开关过程向负载输出电脉冲(或者辐射电磁波)。该开关是超快激光器与光电半导体相结合形成的一类新型器件,在超高速电子学、脉冲功率技术、THz技术等领域具有广阔的应用前景。
与传统电极结构的GaAs光电导开关相比,本发明的开关进入非线性(高倍增)模式的工作条件低。一般情况下,触发光能为nJ量级时,传统电极结构光电导开关进入非线性模式的偏置电场范围为30-80kV/cm。目前,140nJ触发光能条件下,本电极结构开关对应的非线性工作电场阈值仅为10kV/cm,且kHz重复频率触发条件下工作稳定性好。下图示出的是触发光能为140.0nJ,偏置电压为10kV/cm时的触发波形。图3为单次触发稳定波形,图4为1kHz重复频率下触发的稳定波形。从图3和图4中可以看出,输出波形上升时间约为116ps,单次触发和1kHz重复频率触发条件下波形基本没有变化,稳定性高;kHz工作条件下输出波形的可重复性较好。
与传统电极结构的GaAs光电导开关相比,本发明的开关进入非线性(高倍增)模式的条件低。一般情况下,触发光能为nJ量级时,传统电极结构光电导开关进入非线性模式的偏置电场范围为30-80kV/cm。目前,140nJ触发光能条件下,本电极结构开关对应的非线性工作电场阈值仅为10kV/cm,且kHz重复频率触发条件下工作稳定性好。下图示出的是触发光能为140.0nJ,偏置电压为10kV/cm时的触发波形。图3为单次触发稳定波形,图4为1kHz重复频率下触发的稳定波形。从图3和图4中可以看出,输出波形上升时间约为116ps,单次触发和1kHz重复频率触发条件下波形基本没有变化,稳定性高;kHz工作条件下输出波形的可重复性较好。
通过上述方式,本发明的一种微米间隙异面叉指光电导开关,提出并实现用微米间隙异面叉指电极代替传统电极。使开关内部产生的电流丝能够均匀分散,降低了电流丝的密度,使开关寿命得以延长,并且提高了开关的响应速度,使开关更耐压。本发明具有实用性,有利于光电导开关的实用化。
Claims (10)
1.一种微米间隙异面叉指式光电导开关,包括衬底(1),其特征在于,所述衬底(1)上镀有离子溅射钝化层(2),所述衬底(1)中纵向穿插连接叉指电极(3),所述叉指电极(3)两个极板均分别连接传输线(5)。
2.根据权利要求1所述一种微米间隙异面叉指式光电导开关,其特征在于,所述叉指电极(3)的宽度和间隙均为5μm。
3.根据权利要求1所述一种微米间隙异面叉指式光电导开关,其特征在于,所述叉指电极(3)阵列边长为3mm。
4.根据权利要求1所述一种微米间隙异面叉指式光电导开关,其特征在于,所述叉指电极(3)的制备过程为:将衬底(1)置于三氯乙烯、丙酮、甲醇以任意比混合溶液中在超声波浴中清洗,将光刻胶旋涂,待光刻胶固化后,将涂有光刻胶的衬底(1)转移至紫外光刻机上,在样品表面曝光60s后,将光掩膜版叉指图形放置衬底(1)上,在表面先蒸发沉积一层厚度为5nm的Cr层,再蒸发沉积一层厚度为200nm的Au电极层,即得到叉指电极(3)。
5.根据权利要求1所述一种微米间隙异面叉指式光电导开关,其特征在于,所述离子溅射钝化层(2)为560nm的Si3N4离子溅射钝化层。
6.根据权利要求1所述一种微米间隙异面叉指式光电导开关,其特征在于,每个所述叉指电极(3)极板与传输线(5)之间通过引线(4)连接。
7.根据权利要求6所述一种微米间隙异面叉指式光电导开关,其特征在于,所述引线(4)采用金丝热压焊连接在传输线(5)触点与叉指电极(3)电极极板上。
8.根据权利要求1所述一种微米间隙异面叉指式光电导开关,其特征在于,所述衬底(1)为半绝缘GaAs。
9.根据权利要求8所述一种微米间隙异面叉指式光电导开关,其特征在于,所述半绝缘GaAs暗态电阻率为5×107Ω·cm,电子迁移率为7000-8000cm2/(V·s)。
10.根据权利要求1所述一种微米间隙异面叉指式光电导开关,其特征在于,所述离子溅射钝化层(2)厚度为560nm。
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CN112820784A (zh) * | 2020-11-24 | 2021-05-18 | 上海航天电子通讯设备研究所 | 一种垂直背入射同面电极高功率光导开关 |
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