CN111220890A - Parameter characteristic detection device of power semiconductor device - Google Patents
Parameter characteristic detection device of power semiconductor device Download PDFInfo
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- CN111220890A CN111220890A CN202010046707.1A CN202010046707A CN111220890A CN 111220890 A CN111220890 A CN 111220890A CN 202010046707 A CN202010046707 A CN 202010046707A CN 111220890 A CN111220890 A CN 111220890A
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Abstract
The invention discloses a parameter characteristic detection device of a power semiconductor device, which comprises a control board, a power board, a display screen and a direct current stabilized power supply, wherein the control board is an electronic circuit board with a DSP chip and is integrated with a signal acquisition circuit, a control circuit, a protection circuit and a control board power supply circuit; the signal acquisition circuit, the control circuit, the protection circuit and the control panel power supply circuit are all connected with the DSP chip; the signal acquisition circuit is provided with an analog signal interface and a digital signal interface and is used for receiving various analog signals and digital signals, the signal acquisition circuit acquires signals such as voltage and current and the like, the signals are sent to the DSP for calculating the parameter characteristics of the device, and finally, data are sent to the display screen through the communication circuit; the control panel power supply circuit provides electric energy for the whole control panel; the control circuit controls the power board to work; the device solves the problem that the parameter characteristics of the device are inconvenient to detect, and realizes the rapid and accurate detection of the parameter characteristics of the device.
Description
Technical Field
The invention belongs to the technical field of power semiconductor device detection, and particularly relates to a parameter characteristic detection device of a power semiconductor device.
Background
With the continuous development of science and technology, the power electronic technology is in closer contact with various fields of our lives. The power semiconductor device plays a decisive role in the development of power electronic technology, and the power semiconductor device has good working performance along with continuous updating and upgrading. The high-frequency-ratio. The method for detecting the parameter characteristics of the device comprises a resistance measuring method, an induction signal input method and the like, but the method for detecting the parameter characteristics of the device is single and has low precision.
Therefore, a detection apparatus is needed to comprehensively detect the parameter characteristics of the device and determine the quality of the device. Through preliminary search, the prior published technical scheme which is the same as or similar to the content of the invention is not found.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, provides a parameter characteristic detection device of a power semiconductor device, solves the problem that the parameter characteristic of the device is inconvenient to detect, and realizes the rapid and accurate detection of the parameter characteristic of the device.
The invention solves the practical problem by adopting the following technical scheme: the parameter characteristic detection device of the power semiconductor device comprises a control panel, a power panel, a display screen and a direct current stabilized voltage power supply, wherein the control panel is an electronic circuit board with a DSP chip and is integrated with a signal acquisition circuit, a control circuit, a protection circuit and a control panel power supply circuit; the signal acquisition circuit, the control circuit, the protection circuit and the control panel power supply circuit are all connected with the DSP chip; the signal acquisition circuit is provided with an analog signal interface and a digital signal interface and is used for receiving various analog signals and digital signals, the signal acquisition circuit acquires signals such as voltage and current and the like, the signals are sent to the DSP for calculating the parameter characteristics of the device, and finally, data are sent to the display screen through the communication circuit; the control panel power supply circuit provides electric energy for the whole control panel; the control circuit controls the power board to work; the protection circuit has a short-circuit protection function and prevents the DSP chip from being damaged;
the power board is an electronic circuit board with a device connector, and a breakdown voltage detection circuit, an input capacitance detection circuit, a static characteristic detection circuit, a power board power supply circuit and a communication circuit are integrated on the power board; the device connector is used for connecting a device to be tested to the power board, and the breakdown voltage detection circuit is used for boosting voltage and detecting the breakdown voltage of the device; the input capacitance detection circuit is used for detecting an input capacitance; the static characteristic detection circuit is used for detecting a transfer characteristic curve and simultaneously detecting a starting voltage UTBreakdown voltage VDSAnd an on-resistance RonTransconductance GmAnd maximum on-current Idmax(ii) a The power board power supply circuit provides electric energy for the whole power board and the control board; the communication circuit is used for controlling the communication between the control panel and the display screen; the connection and disconnection of the device to be tested, the breakdown voltage detection circuit, the input capacitance detection circuit and the static characteristic detection circuit are controlled by the DSP chip;
the direct-current stabilized power supply is connected with a power board power supply circuit, and the power board power supply circuit is connected with a control board power supply circuit and supplies power to the power board and the control board;
the input capacitance detection circuit adopts an NE555 timer IC precision time-base chip, forms a multivibrator circuit with two external resistors and a device to be detected, and is used for detecting the input capacitance of the device to be detected;
the static characteristic detection circuit adopts an operational amplifier OP2177 with high precision, low noise and low input bias current to realize the output of 12V slope detection voltage;
the breakdown voltage detection circuit is composed of a boost control circuit and a breakdown voltage sampling circuit, the boost control circuit comprises a first-stage boost control circuit and a second-stage boost control circuit, the breakdown voltage detection circuit is provided with a 12V direct-current stabilized voltage supply by a power board power supply circuit, the boost control circuit boosts the 12V voltage to 10000V high voltage in two steps, first-stage boost is carried out through a boost circuit and a voltage-doubling rectifying circuit based on a UC2843 chip in the first-stage boost control circuit, and then second-stage boost is carried out through a mirror constant current source circuit and a boost transformer of the second-stage boost control circuit to obtain high voltage; and the drain electrode or the collector electrode of the device to be detected is connected with the high voltage output by the second-stage boost control circuit, and the breakdown voltage sampling circuit detects the breakdown voltage of the device to be detected.
The invention has the advantages and beneficial effects that:
1. the invention adopts a professional Digital Signal Processor (DSP), the detection speed reaches ms level, the detection current reaches 150A, all the tested devices are repeatedly detected without heating and damage, and the short-circuit protection function is realized.
2. The touch screen adopts a 1024 x 600 high-resolution capacitive touch screen. The detector has an intelligent recognition function, and can automatically prompt that the device is reversely connected, short-circuited, to be detected and the like, and the tube is damaged and is prompted by the flickering of the indicator lamp. The instrument has good detection effect, completely meets the user requirements, and has wide application prospect.
3. The multi-parameter and multi-performance measurement is realized through a self-designed circuit, the use is convenient, and the rapid and accurate detection of the parameter characteristics of the device is realized.
Drawings
FIG. 1 is a system block diagram of one embodiment of the apparatus of the present invention;
FIG. 2 is a schematic diagram of an input capacitance detection circuit according to an embodiment of the present invention;
FIG. 3 is a schematic block diagram of a static behavior detection circuit according to an embodiment of the present invention;
FIG. 4 is a schematic block diagram of a drain current sampling circuit of FIG. 3;
FIG. 5 is a schematic block diagram of a gate voltage sampling circuit of FIG. 3;
FIG. 6 is a schematic block diagram of a drain voltage sampling circuit of FIG. 3;
FIG. 7 is a 12V ramp voltage generating circuit of the static characteristic detecting circuit according to an embodiment of the present invention;
FIG. 8 is a static characteristic detection circuit of an embodiment of the apparatus of the present invention;
FIG. 9 is a schematic block diagram of a breakdown voltage detection circuit in accordance with one embodiment of the present invention;
FIG. 10 is a schematic diagram of a boost circuit based on a UC2843 chip of a first stage boost control circuit of a breakdown voltage detection circuit according to an embodiment of the present invention;
FIG. 11 is a diagram of a voltage doubler rectifier circuit of the first stage boost control circuit of the breakdown voltage detection circuit in accordance with one embodiment of the present invention;
FIG. 12 is a second stage boost control circuit diagram of the breakdown voltage detection circuit in accordance with one embodiment of the present invention;
FIG. 13 is a circuit diagram of breakdown voltage sampling for the breakdown voltage detection circuit of an embodiment of the apparatus of the present invention;
FIG. 14 is a schematic block diagram of a communication circuit according to an embodiment of the present invention;
FIG. 15 is a circuit diagram of a 5V to 3.3V voltage regulator for a control board power supply circuit according to an embodiment of the present invention;
FIG. 16 is a circuit diagram of the voltage regulation circuit for converting 3.3V to 1.8V of the power supply circuit of the control board according to one embodiment of the present invention;
FIG. 17 is a circuit diagram of a 12V to 5V voltage regulator circuit of a power board supply circuit according to an embodiment of the present invention;
FIG. 18 is a circuit diagram of a 5V to-12V voltage regulator circuit of a power board power supply circuit according to an embodiment of the present invention;
FIG. 19 is a circuit diagram of a 5V to 3.3V voltage regulator circuit of a power board supply circuit according to an embodiment of the present invention;
FIG. 20 is a circuit diagram of the voltage regulation circuit for converting-12V to-5V of the power board power supply circuit according to an embodiment of the present invention.
Detailed Description
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "communicating" are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art through specific situations.
The embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
The invention provides a parameter characteristic detection device (refer to fig. 1, the device for short) of a Power semiconductor device, wherein the Power semiconductor device is mainly a full-control device, such as a Power MOSFET (Power MOSFET) and an IGBT (insulated Gate Bipolar transistor), and is characterized in that:
the device comprises a control panel, a power panel, a display screen and a direct current stabilized voltage power supply, wherein the control panel is an electronic circuit board with a DSP chip, and a signal acquisition circuit, a control circuit, a protection circuit and a control panel power supply circuit are integrated on the control panel. The signal acquisition circuit, the control circuit, the protection circuit and the control panel power supply circuit are all connected with the DSP chip; the signal acquisition circuit is provided with an analog signal interface and a digital signal interface and is used for receiving various analog signals and digital signals, the signal acquisition circuit acquires signals such as voltage and current and the like, the signals are sent to the DSP for calculating the parameter characteristics of the device, and finally, data are sent to the display screen through the communication circuit; the control panel power supply circuit provides electric energy for the whole control panel; the control circuit controls the power board to work; the protection circuit has a short-circuit protection function and prevents the DSP chip from being damaged.
The power board is an electronic circuit board with a device connector, and a breakdown voltage detection circuit, an input capacitance detection circuit, a static characteristic detection circuit, a power board power supply circuit and a communication circuit are integrated on the power board; the device connector is used for connecting a device to be tested to the power board, and the breakdown voltage detection circuit is used for boosting voltage and detecting the breakdown voltage of the device; the input capacitance detection circuit is used for detecting an input capacitance;the static characteristic detection circuit is used for detecting a transfer characteristic curve and simultaneously detecting a starting voltage UTBreakdown voltage VDSAnd an on-resistance RonTransconductance GmAnd maximum on-current Idmax(ii) a The power board power supply circuit provides electric energy for the whole power board and the control board; the communication circuit is used for controlling the communication between the panel and the display screen. The connection and disconnection of the device to be tested, the breakdown voltage detection circuit, the input capacitance detection circuit and the static characteristic detection circuit are controlled by the DSP chip.
The direct-current stabilized power supply is connected with the power board power supply circuit, and the power board power supply circuit is connected with the control board power supply circuit and supplies power to the power board and the control board. The direct current stabilized power supply adopts a 12V switching power supply board 8A/100W high-power supply module, the model of a circuit board of the direct current stabilized power supply is XK-2412DC, the input voltage is AC 85-265V, the output voltage is 12V, the output current is 6-8A, and the power supply has overcurrent protection, overload protection and short-circuit protection.
The input capacitance detection circuit adopts an NE555 timer IC precision time base chip, forms a multivibrator circuit with two external resistors and a device to be detected, and is used for detecting the input capacitance of the device to be detected.
The static characteristic detection circuit adopts an operational amplifier OP2177 with high precision, low noise and low input bias current to realize the output of 12V slope detection voltage. The communication circuit adopts an MAX485 low-power-consumption transceiver to realize RS-485 communication, and an automatic transceiving 485 communication circuit is applied in the embodiment, so that a DSP chip is not required to actively control a transceiving mode.
Breakdown voltage detects circuit comprises boost control circuit and breakdown voltage sampling circuit, boost control circuit includes first order boost control circuit and second level boost control circuit, and breakdown voltage detects circuit and provides 12V direct current constant voltage power supply by power board power supply circuit, and boost control circuit divides two steps to rise 12V voltage to 10000V high pressure, at first carries out the first order through the boost circuit and the voltage doubling rectifier circuit based on UC2843 chip among the first order boost control circuit and steps up, then carries out the second level through second level boost control circuit's mirror constant current source circuit and step up transformer and steps up and obtain the high pressure. And the drain electrode (or the collector electrode) of the device to be detected is connected with the high voltage output by the second-stage boosting control circuit, and the breakdown voltage sampling circuit detects the breakdown voltage of the device to be detected.
Specifically, the first stage boosting process: the UC2843 chip provides a 12V direct current stabilized voltage power supply by a power board power supply circuit, and the UC2843 chip controls a switching tube on the primary side of the first-stage booster transformer to be opened and closed at a set frequency period, so that the primary side inductor of the transformer stores energy and releases the energy. When the switching tube is conducted, the primary side inductor of the first-stage transformer is charged, and energy is stored in the inductor. When the switch is turned off, the inductor generates a reverse induced voltage, the stored electrical energy is discharged to the output capacitor through a diode connected to the primary inductor, and the output voltage is controlled by the peak value of the inductor current. The whole voltage stabilizing process is controlled by two closed loops, namely, the closed loop 1: the output voltage of the first-stage booster circuit is sampled through a voltage dividing resistor, the sampled voltage is fed back to an error amplifier in a UC2843 chip and is used for being compared with a 2.5V reference voltage in the amplifier to generate an error voltage, and the error amplifier controls the change of the output voltage caused by the change of a load. Closed loop 2: a current detection resistor is connected between the source electrode and the common end of the switching tube, the current flowing through the primary side inductor of the first-stage transformer generates a voltage difference on the detection resistor during the conduction period of the switching tube, the sampling voltage is transmitted to the non-inverting input end of a PWM signal comparator of the UC2843 chip, the non-inverting input end of the PWM signal comparator is compared with the error voltage, and then the pulse width of the modulation pulse is controlled, so that the secondary side output voltage of the first-stage booster transformer is kept stable. The secondary output voltage of the first step-up transformer is boosted by the voltage-doubling rectifying circuit to obtain the output voltage of the first step-up circuit, and the voltage-doubling rectifying circuit respectively stores the voltages on respective capacitors by utilizing the rectifying and guiding functions of the diodes and then connects the capacitors in series according to the principle of polarity addition, thereby obtaining the boosting effect. When the secondary side output of the first-stage boosting transformer is negative, the first-stage boosting transformer charges the upper bridge arm capacitor through the diode to store energy, when the secondary side output of the transformer is negative, positive and negative, the upper bridge arm capacitor charges the lower bridge arm capacitor through the secondary side of the transformer, when the circuit enters a steady state, except that the voltage of the first-stage capacitor is the secondary side output voltage of the first-stage boosting transformer, the voltage of each capacitor is twice the secondary side output voltage of the transformer. The voltage doubling rectifying circuit adopts a 6 voltage doubling rectifying circuit, three groups of diodes and energy storage capacitors are needed, and 6 times of secondary output voltage of the first-stage transformer can be obtained.
The output voltage of the first-stage boosting circuit is controlled to be small current through a mirror image constant current source circuit of a second-stage boosting control circuit, so that high current is prevented from being generated to damage a device to be detected, the mirror image constant current source circuit mainly comprises a first triode VT1 and a second triode VT2 which are matched in pair, the two triodes are PNP type triodes, emitting electrodes of the first triode VT1 and the second triode VT2 are connected with the output end of the first-stage boosting circuit, base electrodes of the first triode VT1 and the second triode VT2 are connected with the ground through a current limiting resistor, a base electrode of the first triode VT1 and a collecting electrode of the first triode VT 3538 are connected through a lead, a collecting electrode of the second triode VT2 is connected with a primary side inductor of a second-stage transformer, when the amplification coefficient of the triodes β is large enough, the collecting electrode current of the second triode VT2 is approximately equal to the collecting electrode current of the first triode VT1, small current can be controlled through a control resistor, a DSP chip controls the primary side inductor current of the second-stage boosting transformer through a switching tube, the output voltage of a high-voltage-to-.
Referring to fig. 2, the input capacitor Ciss and the NE555 timer form a multi-resonant oscillator, different input capacitors corresponding to different devices to be detected generate different oscillation frequencies, and the output voltage U of the capacitor detection module0Is a PWM signal; the capacitance detection module is connected with an I/O interface of the DSP chip, and captures the rising edge of the PWM signal through a capture module of the DSP chip so as to obtain the oscillation period T of the oscillator and the known resistance R1And R2The input capacitance Ciss can be calculated by a formula. The calculation formula is as follows:
T1charging time, T, of capacitor Ciss2For the discharge time, it is thus possible to:
the specific detection process is as follows: after the device is started, the DSP chip outputs a high level to keep a relay 0 (the model is an optical coupling relay AC30) in a closed state, a device to be tested is inserted into a device connector positioned on a power board, six pins of the NE555 timer chip are connected with a grid electrode (or a base electrode) of the device to be tested, an output end outputs a PWM signal to the DSP chip, and the DSP chip calculates an input capacitor Ciss according to the formula.
3-8, detecting the parameter characteristic by touching a display screen or clicking a key, wherein the display screen sends a control command to a DSP chip, the DSP chip outputs a low level to open a relay 0 and release an occupied grid (or base) of a device to be detected, and the DSP chip outputs a high level to close a relay 1 (the model is an optical coupling relay AC30) so that the grid (or the base) of the device is connected with 12V slope voltage; meanwhile, the DSP chip outputs a high-level closed relay 2 (the model is HF7520-012-HSTP normally-open 4-pin high-load relay), a drain electrode (or a collector electrode) of a device to be tested is connected with a 12V direct-current stabilized voltage power supply, as shown in figure 3, the DSP chip controls the PWM duty ratio to be gradually increased from 0% to 100%, a slope voltage signal of 0 to 12V is output through a second-order RC filter circuit to be connected with a grid electrode (or a base electrode) of the device to be tested, grid electrode (or base electrode) voltage, drain electrode (or collector electrode) voltage and current are sampled once every 10 mu s, 100 points are sampled, and 1ms is needed for drawing a transfer characteristic curve. The starting voltage, the on-resistance, the transconductance and the maximum drain (or collector) current can be obtained by calculation of the DSP chip in the transfer characteristic curve detection process, and when the drain (or collector) current is larger than a certain minimum value IdminAt this time, the value of the gate (or base) voltage is recorded, which is approximately the turn-on voltage UT. The maximum on-state current of the device to be tested in the working and constant current region is limited by the grid (or base) voltage, the drain (or collector) current is detected in real time, and the maximum on-state current is obtained by a comparison methodMaximum on-state current IdmaxThe on-resistance and transconductance are calculated by the following two formulas:
in the formula VdsIs the drain (or collector) voltage, IdsIs the drain (or collector) current, UgsIs the gate (or base) voltage.
The circuit schematic block diagram of the detection device for detecting the breakdown voltage is shown in fig. 9-13, after the static characteristic detection is finished, the DSP chip outputs low level to control the relay 1 and the relay 2 in the capacitance detection circuit to be disconnected, and the grid (or base) and the drain (or collector) of the device to be detected are released; at the same time, the DSP outputs high level to control and close the relay 3 and the power switch S in the figure 52The output end of the second-stage booster circuit is connected with a drain electrode (or a collector electrode) of the device to be detected, 10000V high voltage is induced by a secondary side inductor of the second-stage transformer, the drain electrode (or the collector electrode) of the device to be detected is connected with the high voltage, and the breakdown voltage sampling circuit detects the breakdown voltage of the device to be detected.
The breakdown voltage detection circuit specifically works in such a way that a booster circuit boosts 12V voltage to 10000V high voltage in two steps, a boost booster circuit and a voltage-multiplying rectification circuit based on a chip UC2843 perform first-stage boosting, a mirror constant current source circuit and a booster transformer perform second-stage boosting, the chip UC2843 is powered by a 12V power supply, the UC2843 controls a first-stage booster transformer (the first-stage booster transformer is a customized high-frequency transformer, the boosting ratio is about 1:25), a primary side power switch S (the model is an MOS field-effect transistor IRFB4227) is periodically switched on at a set frequency to enable a primary side inductor L1 of the transformer to store energy and release energy, when a switching tube S is switched on, a primary side inductor of the first-stage transformer charges and stores the energy in the inductor, when the switch is switched off, the inductor generates reverse induction voltage, the stored electric energy is released into an output capacitor through a diode D (the model is a high-rectifier recovery diode 1A/1000V) connected with the primary side inductor VT, the diode D (the model is connected with the model is a high-V recovery diode 1A, the model is a secondary rectifier recovery diode V recovery diode 1A/1000V, the model, the voltage of the model is a primary side rectifier, the voltage output voltage of the voltage, the voltage of the voltage-recovery diode VT-V-recovery diode V-recovery diode, the secondary rectifier circuit, the voltage is obtained through a secondary rectifier circuit, the voltage-V-VT-V-VT detection circuit, the secondary rectifier circuit is a secondary rectifier circuit, the secondary rectifier circuit is connected with the primary side rectifier circuit, the secondary rectifier circuit, the primary side rectifier circuit, the secondary rectifier circuit is the secondary rectifier circuit, the secondary rectifier circuit is connected with the primary side rectifier circuit, the secondary rectifier circuit, the primary side rectifier circuit, the secondary rectifier circuit is connected with the secondary rectifier circuit, the primary side rectifier circuit, the secondary rectifier circuit, the primary side rectifier circuit.
The schematic diagram of the communication circuit is shown in fig. 14, and the communication between the display screen and the control panel is realized by automatically switching the sending and receiving states without controlling data sending and receiving by a DSP.
Further, the present invention provides a method for detecting parameter characteristics of a power semiconductor device (abbreviated as detection method), which adopts the above-mentioned apparatus and the following steps:
step 1: inserting a device to be detected into a device connector on a power board, preferentially detecting an input capacitor of the device to be detected in consideration of the time required by charging and discharging of the capacitor, controlling a capacitor detection circuit relay to be closed by a DSP chip, communicating the capacitor detection circuit with a grid electrode (or a base electrode) of the device to be detected, and detecting the input capacitor;
and 3, after the static characteristic detection is finished, automatically disconnecting the static characteristic detection relay, releasing the grid electrode (or the base electrode) and the drain electrode (or the collector electrode) of the device to be detected, closing the corresponding relay, communicating the breakdown voltage detection circuit with the drain electrode (or the collector electrode) of the device to be detected, and detecting the breakdown voltage. After all the parameters of the device are detected, the DSP chip sends detection data to the display screen through the communication circuit, and the display screen displays the parameter characteristics of the device to be detected.
It should be emphasized that the examples described herein are illustrative and not restrictive, and thus the present invention includes, but is not limited to, those examples described in this detailed description, as well as other embodiments that can be derived from the teachings of the present invention by those skilled in the art and that are within the scope of the present invention.
Claims (5)
1. A parameter characteristic detection device of a power semiconductor device is characterized by comprising a control board, a power board, a display screen and a direct current stabilized power supply, wherein the control board is an electronic circuit board with a DSP chip and is integrated with a signal acquisition circuit, a control circuit, a protection circuit and a control board power supply circuit; the signal acquisition circuit, the control circuit, the protection circuit and the control panel power supply circuit are all connected with the DSP chip; the signal acquisition circuit is provided with an analog signal interface and a digital signal interface and is used for receiving various analog signals and digital signals, the signal acquisition circuit acquires signals such as voltage and current and the like, the signals are sent to the DSP for calculating the parameter characteristics of the device, and finally, data are sent to the display screen through the communication circuit; the control panel power supply circuit provides electric energy for the whole control panel; the control circuit controls the power board to work; the protection circuit has a short-circuit protection function and prevents the DSP chip from being damaged;
the power board is an electronic circuit board with a device connector, and a breakdown voltage detection circuit, an input capacitance detection circuit, a static characteristic detection circuit, a power board power supply circuit and a communication circuit are integrated on the power board; the device connector is used for connecting a device to be tested to the power board, and the breakdown voltage detection circuit is used for boosting voltage and detecting the breakdown voltage of the device; the input capacitance detection circuit is used for detecting an input capacitance; the static characteristic detection circuit is used for detecting a transfer characteristic curve and simultaneously detecting a starting voltageUTBreakdown voltage VDSAnd an on-resistance RonTransconductance GmAnd maximum on-current Idmax(ii) a The power board power supply circuit provides electric energy for the whole power board and the control board; the communication circuit is used for controlling the communication between the control panel and the display screen; the connection and disconnection of the device to be tested, the breakdown voltage detection circuit, the input capacitance detection circuit and the static characteristic detection circuit are controlled by the DSP chip;
the direct-current stabilized power supply is connected with a power board power supply circuit, and the power board power supply circuit is connected with a control board power supply circuit and supplies power to the power board and the control board;
the input capacitance detection circuit adopts an NE555 timer IC precision time-base chip, forms a multivibrator circuit with two external resistors and a device to be detected, and is used for detecting the input capacitance of the device to be detected;
the static characteristic detection circuit adopts an operational amplifier OP2177 with high precision, low noise and low input bias current to realize the output of 12V slope detection voltage;
the breakdown voltage detection circuit is composed of a boost control circuit and a breakdown voltage sampling circuit, the boost control circuit comprises a first-stage boost control circuit and a second-stage boost control circuit, the breakdown voltage detection circuit is provided with a 12V direct-current stabilized voltage supply by a power board power supply circuit, the boost control circuit boosts the 12V voltage to 10000V high voltage in two steps, first-stage boost is carried out through a boost circuit and a voltage-doubling rectifying circuit based on a UC2843 chip in the first-stage boost control circuit, and then second-stage boost is carried out through a mirror constant current source circuit and a boost transformer of the second-stage boost control circuit to obtain high voltage; and the drain electrode or the collector electrode of the device to be detected is connected with the high voltage output by the second-stage boost control circuit, and the breakdown voltage sampling circuit detects the breakdown voltage of the device to be detected.
2. The apparatus of claim 1, wherein the communication circuit implements RS-485 communication using a MAX485 low power transceiver.
3. The device for detecting the parameter characteristics of the power semiconductor device as claimed in claim 1, wherein the direct current stabilized power supply adopts a 12V switching power supply board 8A/100W high-power supply module, the circuit board type of the direct current stabilized power supply module is XK-2412DC, the input voltage is AC 85-265V, the output voltage is 12V, and the output current is 6-8A.
4. The apparatus of claim 1, wherein the first stage boosting and the second stage boosting of the breakdown voltage detection circuit are performed by:
a first-stage boosting process: the UC2843 chip provides a 12V direct-current stabilized voltage power supply by a power board power supply circuit, and controls a switching tube on the primary side of the first-stage booster transformer to be opened and closed at a set frequency period, so that the primary side inductor of the transformer stores energy and releases the energy; when the switching tube is conducted, the primary side inductor of the first-stage transformer is charged, and energy is stored in the inductor; when the switch is cut off, the inductor generates reverse induction voltage, the stored electric energy is released into the output capacitor through the diode connected with the primary inductor, and the output voltage is controlled by the peak value of the inductor current; the whole voltage stabilizing process is controlled by two closed loops, namely, the closed loop 1: the output voltage of the first-stage booster circuit is sampled through a voltage dividing resistor, the sampled voltage is fed back to an error amplifier in a UC2843 chip and is used for generating error voltage after being compared with 2.5V reference voltage in the amplifier, and the error amplifier controls the change of the output voltage caused by load change; closed loop 2: a current detection resistor is connected between the source electrode and the common end of the switching tube, the current flowing through the primary side inductor of the first-stage transformer generates a voltage difference on the detection resistor during the conduction period of the switching tube, a sampling voltage is transmitted to the non-inverting input end of a PWM signal comparator of the UC2843 chip, and the non-inverting input end is compared with an error voltage to control the pulse width of a modulation pulse, so that the secondary side output voltage of the first-stage booster transformer is kept stable; the secondary side output voltage of the first stage booster transformer is boosted through a voltage-doubling rectifying circuit to obtain the output voltage of the first stage booster circuit, the voltage-doubling rectifying circuit respectively stores the voltage on respective capacitors by utilizing the rectifying and guiding functions of a diode, and then the voltages are connected in series according to the principle of polarity addition, so that the boosting effect is obtained; when the secondary side output of the first-stage boosting transformer is negative, the first-stage boosting transformer charges the upper bridge arm capacitor through the diode to store energy, when the secondary side output of the transformer is negative, positive and negative, the upper bridge arm capacitor charges the lower bridge arm capacitor through the secondary side of the transformer, when the circuit enters a steady state, except that the voltage of the first-stage capacitor is the secondary side output voltage of the first-stage boosting transformer, the voltage of each capacitor is twice the secondary side output voltage of the transformer;
the second stage boosting process is that the output voltage of the first stage boosting circuit is controlled to be small current through a mirror image constant current source circuit of the second stage boosting control circuit, large current is prevented from being generated to damage a device to be detected, the mirror image constant current source circuit mainly comprises a first triode VT1 and a second triode VT2 which are matched, PNP type triodes are adopted as the two triodes, emitting electrodes of the first triode VT1 and the second triode VT2 are connected with the output end of the first stage boosting circuit, base electrodes of the first triode VT1 and the second triode VT2 are connected, a collector electrode of the first triode VT1 is grounded through a current limiting resistor, a base electrode of the first triode VT1 and a collector electrode of the first triode VT 3538 are connected through a lead, a collector electrode of the second triode VT2 is connected with a primary side inductor of the second stage transformer, when the amplification coefficient β of the triodes is large enough, the collector electrode current of the second triode VT2 is approximately equal to the collector electrode current of the first triode VT1, small current can be controlled through the control resistor, the primary side inductor current of the second stage boosting transformer is controlled, the first stage boosting control chip.
5. The apparatus of claim 1, wherein the voltage doubler rectifier circuit of the breakdown voltage detection circuit is a 6-times voltage doubler rectifier circuit, and three sets of diodes and energy storage capacitors are required to obtain 6 times of the secondary output voltage of the first-stage transformer.
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