CN111211217B - Nanometer thermoelectric active material for 3D flame electric fireplace and preparation method thereof - Google Patents
Nanometer thermoelectric active material for 3D flame electric fireplace and preparation method thereof Download PDFInfo
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
The invention discloses a nano thermoelectric active material for a 3D flame electric fireplace and a preparation method thereof, wherein a thermoelectric matrix comprises: 20-30 parts of silicon dioxide, 10-20 parts of poly (p-xylylene) and 10-15 parts of polytetrafluoroethylene; thermoelectric material: preparation of nano wires, namely 5-20 parts of carbon nano tubes, 10-20 parts of Bi, 10-20 parts of Sb, 20-40 parts of porous materials, 10-15 parts of graphene, 6-10 parts of copper powder and 10-15 parts of semiconductor materials: the invention relates to the technical field of thermoelectric active materials, in particular to a method for removing impurities from bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, antimony zinc oxide, a mixture of half heusler alloys, bi and Sb. According to the nano thermoelectric active material for the 3D flame electric fireplace and the preparation method thereof, when the nano thermoelectric active material is prepared, a layer of mixed film of graphene and copper is formed on the surface of the nanowire, and the graphene and the copper have good thermal conductivity and electrical conductivity, so that the energy loss of the thermoelectric material during thermoelectric conversion can be reduced, the thermoelectric conversion effect is better, and the energy is saved.
Description
Technical Field
The invention relates to the technical field of thermoelectric active materials, in particular to a nano thermoelectric active material for a 3D flame electric fireplace and a preparation method thereof.
Background
The 3D flame electric fireplace abandons the design concept of the traditional electric fireplace, does not need any imaging screen, adopts electric lamplight as a light source, almost-disordered dynamic flame directly burns out of a wood pile, directly generates flame in the air, and the flame is upwards and upwards lifted along with surrounding airflow, is lifelike, and achieves the effect of three-dimensional flame simulation by perfectly fusing smoke and flame.
Thermoelectric materials are functional materials capable of converting thermal energy and electrical energy into each other, and with the increasing interest in space exploration, advances in medical physics, and increasingly difficult resource exploration and exploration activities in the earth, it is necessary to develop a class of self-powered and unattended power systems for which thermoelectric power generation is particularly suitable.
The thermoelectric active material in the 3D flame electric fireplace is an important component, but when the thermoelectric active material used in the existing 3D flame electric fireplace is used for converting the thermoelectric, the thermoelectric active material has great energy loss in the conversion process due to the material property of the thermoelectric active material, so that the energy loss is increased, and the environment is not protected.
Disclosure of Invention
(one) solving the technical problems
Aiming at the defects of the prior art, the invention provides a nano thermoelectric active material for a 3D flame electric fireplace and a preparation method thereof, which solve the problems of great energy loss, increased energy loss and insufficient environmental protection in the conversion process due to the material property of the nano thermoelectric active material when the thermoelectric active material is used for converting heat.
(II) technical scheme
In order to achieve the above purpose, the invention is realized by the following technical scheme: the nanometer thermoelectric active material for the 3D flame electric fireplace comprises the following raw materials in parts by weight:
thermoelectric matrix: 20-30 parts of silicon dioxide, 10-20 parts of poly (p-xylylene) and 10-15 parts of polytetrafluoroethylene;
thermoelectric material: 5-20 parts of carbon nano tube, 10-20 parts of Bi, 10-20 parts of Sb, 20-40 parts of porous material, 10-15 parts of graphene, 6-10 parts of copper powder and 10-15 parts of semiconductor material.
Preferably, the thermoelectric matrix: 20 parts of silicon dioxide, 10 parts of poly (terephthalylene) and 10 parts of polytetrafluoroethylene;
thermoelectric material: 5 parts of carbon nano tube, 10 parts of Bi, 10 parts of Sb, 20 parts of porous material, 10 parts of graphene, 6 parts of copper powder and 10 parts of semiconductor material.
Preferably, the thermoelectric matrix: 25 parts of silicon dioxide, 15 parts of poly (p-xylylene) and 13 parts of polytetrafluoroethylene;
thermoelectric material: 13 parts of carbon nano tube, 15 parts of Bi, 15 parts of Sb, 30 parts of porous material, 13 parts of graphene, 8 parts of copper powder and 13 parts of semiconductor material.
Preferably, the thermoelectric matrix: 30 parts of silicon dioxide, 20 parts of poly (p-xylylene) and 15 parts of polytetrafluoroethylene;
thermoelectric material: 20 parts of carbon nano tube, 20 parts of Bi, 20 parts of Sb, 40 parts of porous material, 15 parts of graphene, 10 parts of copper powder and 15 parts of semiconductor material.
Preferably, 30 parts of silicon dioxide, 20 parts of poly (p-xylylene) and 15 parts of polytetrafluoroethylene;
thermoelectric material: 20 parts of carbon nano tube, 20 parts of Bi, 20 parts of Sb, 40 parts of porous material and 15 parts of semiconductor material.
Preferably, the semiconductor material is a mixture of bismuth telluride, antimony doped bismuth telluride, selenium doped bismuth telluride, antimony zinc telluride and half heusler alloy, and the weight ratio of the semiconductor material is 1:1:2:1:1.
preferably, the shape of the carbon nanotube is square (nano carbon unit 120 c), round (nano carbon unit 120 a), hexagonal (nano carbon unit 120 b), oval (nano carbon unit 120 f), star (nano carbon unit 120 e), triangle (nano carbon unit 120 d) and pentagon (nano carbon unit 120 g).
Preferably, the porous material is anodized aluminum or mica.
The invention also discloses a preparation method of the nano thermoelectric active material for the 3D flame electric fireplace, which comprises the following steps:
step one, preparing a nanowire: respectively carrying out impurity removal treatment on bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, antimony zinc telluride, a mixture of half heusler alloy, bi and Sb, melting after ensuring that no impurity residue exists on the surface, continuing to melt for 10 minutes after the melting temperature is reached, obtaining a bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, antimony zinc telluride, a mixture of half heusler alloy and a molten liquid of Bi and Sb, and injecting the bismuth telluride, the antimony-doped bismuth telluride, the antimony zinc, the mixture of half heusler alloy and the molten liquid of Bi and Sb into porous materials and nanotubes under high pressure, and cooling for 20 minutes at room temperature after the injection is finished, thereby obtaining nanowires;
step two, mixing the base material and the nanowires: putting the nanowire, the silicon dioxide, the poly-p-xylylene and the polytetrafluoroethylene into a chemical vapor deposition furnace, performing vapor deposition, applying the nanowire, the silicon dioxide, the poly-p-xylylene and the polytetrafluoroethylene on the surface of the nanowire, waiting for complete molding, and then placing at a temperature of 40 ℃;
step three, material formation: crushing graphene and copper into particles with the diameter of micrometers, surrounding the graphene powder and copper powder on the surface of the nanowire, firstly dispersing the graphene powder and the copper powder by a grinding dispersion method, then dispersing the graphene powder and the copper powder by an ultrasonic dispersion method to uniformly disperse the graphene powder and the copper powder on the surface of the nanowire, and then forming a mixed film of the graphene and the copper on the surface of the nanowire by an electroplating method to finish the preparation;
step four, ending work: and cleaning the instruments used in the preparation process, and storing the instruments for standby after confirmation.
(III) beneficial effects
The invention provides a nano thermoelectric active material for a 3D flame electric fireplace and a preparation method thereof. Compared with the prior art, the method has the following beneficial effects:
(1) The nanometer thermoelectric active material for the 3D flame electric fireplace and the preparation method thereof are characterized in that a thermoelectric matrix is arranged: 20-30 parts of silicon dioxide, 10-20 parts of poly (p-xylylene) and 10-15 parts of polytetrafluoroethylene; thermoelectric material: 5-20 parts of carbon nano tube, 10-20 parts of Bi, 10-20 parts of Sb, 20-40 parts of porous material, 10-15 parts of graphene, 6-10 parts of copper powder and 10-15 parts of semiconductor material, and when the nano thermoelectric active material is prepared, a layer of mixed film of graphene and copper is formed on the surface of the nano wire, and the graphene and the copper both have good thermal conductivity and electrical conductivity, so that the energy loss of the thermoelectric material during thermoelectric conversion can be greatly reduced, the thermoelectric conversion effect is better, and the energy is saved.
(2) According to the nano thermoelectric active material for the 3D flame electric fireplace and the preparation method thereof, graphene and copper powder are crushed into particles with the diameter of microns, then the graphene powder and the copper powder are surrounded on the surface of a nanowire, the graphene powder and the copper powder are dispersed through a grinding dispersion method, then the graphene powder and the copper powder are uniformly dispersed on the surface of the nanowire through an ultrasonic dispersion method, then a mixed film of the graphene and the copper is formed on the surface of the nanowire through an electroplating method, the preparation is completed, the graphene powder and the copper powder are surrounded on the surface of the nanowire, the graphene powder and the copper powder are firstly dispersed through a grinding dispersion method, then the copper powder is dispersed through an ultrasonic dispersion method, and the graphene powder and the copper powder can be efficiently and stably dispersed on the surface of the nanowire, so that the graphene powder and the copper powder are uniformly dispersed on the surface of the nanowire, the distribution is more uniform, and the electric conductivity and the thermal conductivity are better.
(3) According to the nano thermoelectric active material for the 3D flame electric fireplace and the preparation method thereof, the nanowire, the silicon dioxide, the poly-p-xylylene and the polytetrafluoroethylene are all placed in a chemical vapor deposition furnace to be subjected to vapor deposition, the nanowire, the silicon dioxide, the poly-p-xylylene and the polytetrafluoroethylene are applied to the surface of the nanowire, after the nanowire, the silicon dioxide, the poly-p-xylylene and the polytetrafluoroethylene are completely molded, the nanowire, the silicon dioxide, the poly-p-xylylene and the polytetrafluoroethylene are placed at the temperature of 40 ℃, and when the semiconductor material is molded, the nanowire, the silicon dioxide, the poly-p-xylylene and the polytetrafluoroethylene are applied to the surface of the nanowire through the vapor deposition, so that the adhesive force of a coating is strong, and the uniformity and the repeatability are better.
Detailed Description
The following description of the technical solutions in the embodiments of the present invention will be made clearly and completely with reference to the tables in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to table 1, the embodiments of the present invention provide four technical schemes: the preparation method of the nano thermoelectric active material for the 3D flame electric fireplace specifically comprises the following steps:
embodiment one:
step one, preparing a nanowire: respectively carrying out impurity removal treatment on 10 parts of bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, antimony zinc telluride, a mixture of half heusler alloy, 10 parts of Bi and 10 parts of Sb, melting after ensuring that no impurity residue exists on the surface, continuing to melt for 10 minutes after reaching the melting temperature to obtain bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, antimony zinc telluride, a mixture of half heusler alloy and a molten liquid of Bi and Sb, and injecting the bismuth telluride, the antimony-doped bismuth telluride, the selenium-doped bismuth telluride, the antimony zinc telluride, the mixture of half heusler alloy and the molten liquid of Bi and Sb into 20 parts of porous materials and 5 parts of nanotubes under high pressure, and cooling for 20 minutes at room temperature after the injection is finished to obtain nanowires;
step two, mixing the base material and the nanowires: putting the nanowire, 20 parts of silicon dioxide, 10 parts of poly (terephthalylene) and 10 parts of polytetrafluoroethylene into a chemical vapor deposition furnace, performing vapor deposition, applying the nanowire, the silicon dioxide, the poly (terephthalylene) and the polytetrafluoroethylene on the surface of the nanowire, waiting for complete molding, and then placing at a temperature of 40 ℃;
step three, material formation: crushing graphene and copper into particles with the diameter of micrometers, surrounding 10 parts of graphene powder and 6 parts of copper powder on the surface of a nanowire, firstly dispersing the graphene powder and the copper powder by a grinding dispersion method, then dispersing the graphene powder and the copper powder by an ultrasonic dispersion method to uniformly disperse the graphene powder and the copper powder on the surface of the nanowire, and then forming a graphene and copper mixed film on the surface of the nanowire by an electroplating method to finish the preparation;
step four, ending work: and cleaning the instruments used in the preparation process, and storing the instruments for standby after confirmation.
Embodiment two:
step one, preparing a nanowire: respectively carrying out impurity removal treatment on 13 parts of bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, antimony zinc telluride, a mixture of half heusler alloy, 15 parts of Bi and 15 parts of Sb, melting after ensuring that no impurity residue exists on the surface, continuing to melt for 10 minutes after the melting temperature is reached, obtaining bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, antimony zinc telluride, a mixture of half heusler alloy and a molten liquid of Bi and Sb, and injecting the bismuth telluride, the antimony-doped bismuth telluride, the selenium-doped bismuth telluride, the antimony zinc telluride, the mixture of half heusler alloy and the molten liquid of Bi and Sb into 30 parts of porous materials and 13 parts of nanotubes under high pressure, and cooling for 20 minutes at room temperature after the injection is completed, so as to obtain nanowires;
step two, mixing the base material and the nanowires: putting the nanowire, 25 parts of 15 parts of silicon dioxide, poly-p-xylylene and 15 parts of polytetrafluoroethylene into a chemical vapor deposition furnace, performing vapor deposition, applying the nanowire, the silicon dioxide, the poly-p-xylylene and the polytetrafluoroethylene on the surface of the nanowire, waiting for complete molding, and then placing at a temperature of 40 ℃;
step three, material formation: crushing 13 parts of graphene and 8 parts of copper powder into particles with the diameter of micrometers, surrounding the graphene powder and the copper powder on the surface of the nanowire, firstly dispersing the graphene powder and the copper powder by a grinding dispersion method, then dispersing the graphene powder and the copper powder by an ultrasonic dispersion method to uniformly disperse the graphene powder and the copper powder on the surface of the nanowire, and then forming a mixed film of the graphene and the copper on the surface of the nanowire by an electroplating method to finish the preparation;
step four, ending work: and cleaning the instruments used in the preparation process, and storing the instruments for standby after confirmation.
Embodiment III:
step one, preparing a nanowire: respectively carrying out impurity removal treatment on 15 parts of bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, antimony zinc telluride, a mixture of half heusler alloy, 20 parts of Bi and 20 parts of Sb, melting after ensuring that no impurity residue exists on the surface, continuing to melt for 10 minutes after the melting temperature is reached, obtaining bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, antimony zinc telluride, a mixture of half heusler alloy and a molten liquid of Bi and Sb, and injecting the bismuth telluride, the antimony-doped bismuth telluride, the selenium-doped bismuth telluride, the antimony zinc telluride, the mixture of half heusler alloy and the molten liquid of Bi and Sb into 40 parts of porous materials and 20 parts of nanotubes under high pressure, and cooling for 20 minutes at room temperature after the injection is completed, so as to obtain nanowires;
step two, mixing the base material and the nanowires: putting the nanowire, 30 parts of silicon dioxide, 20 parts of poly (terephthalylene) and 20 parts of polytetrafluoroethylene into a chemical vapor deposition furnace, performing vapor deposition, applying the nanowire, the silicon dioxide, the poly (terephthalylene) and the polytetrafluoroethylene on the surface of the nanowire, waiting for complete molding, and then placing at a temperature of 40 ℃;
step three, material formation: crushing 15 parts of graphene and 10 parts of copper powder into particles with the diameter of micrometers, surrounding the graphene powder and the copper powder on the surface of the nanowire, firstly dispersing the graphene powder and the copper powder by a grinding dispersion method, then dispersing the graphene powder and the copper powder by an ultrasonic dispersion method to uniformly disperse the graphene powder and the copper powder on the surface of the nanowire, and then forming a mixed film of the graphene and the copper on the surface of the nanowire by an electroplating method to finish the preparation;
step four, ending work: and cleaning the instruments used in the preparation process, and storing the instruments for standby after confirmation.
Embodiment four:
step one, preparing a nanowire: respectively carrying out impurity removal treatment on 40 parts of bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, antimony zinc telluride, a mixture of half heusler alloy, 20 parts of Bi and 20 parts of Sb, melting after ensuring that no impurity residue exists on the surface, continuing to melt for 10 minutes after the melting temperature is reached, obtaining bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, antimony zinc telluride, a mixture of half heusler alloy and a molten liquid of Bi and Sb, and injecting the bismuth telluride, the antimony-doped bismuth telluride, the selenium-doped bismuth telluride, the antimony zinc telluride, the mixture of half heusler alloy and the molten liquid of Bi and Sb into 15 parts of porous materials and 20 parts of nanotubes under high pressure, and cooling for 20 minutes at room temperature after the injection is completed, so as to obtain nanowires;
step two, mixing the base material and the nanowires: putting the nanowire, 30 parts of silicon dioxide, 20 parts of poly (terephthalylene) and 20 parts of polytetrafluoroethylene into a chemical vapor deposition furnace, performing vapor deposition, applying the nanowire, the silicon dioxide, the poly (terephthalylene) and the polytetrafluoroethylene on the surface of the nanowire, waiting for complete molding, and then placing at a temperature of 40 ℃;
step three, material formation: crushing graphene and copper into particles with the diameter of micrometers, surrounding the graphene powder and copper powder on the surface of the nanowire, firstly dispersing the graphene powder and the copper powder by a grinding dispersion method, then dispersing the graphene powder and the copper powder by an ultrasonic dispersion method to uniformly disperse the graphene powder and the copper powder on the surface of the nanowire, and then forming a mixed film of the graphene and the copper on the surface of the nanowire by an electroplating method to finish the preparation;
step four, ending work: and cleaning the instruments used in the preparation process, and storing the instruments for standby after confirmation.
Comparative experiments
According to the method disclosed by the invention, according to the prior manufacturer, according to claim 1, four nano thermoelectric active materials for the 3D flame electric fireplace can be produced, after the nano thermoelectric active materials for the four 3D flame electric fireplaces are treated, the nano thermoelectric active materials for the four 3D flame electric fireplaces are subjected to a thermoelectric conversion efficiency comparison experiment, and the results are shown in the following table:
thermoelectric conversion efficiency test table:
as can be seen from the above table, the conversion effect of the third embodiment is the best.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (8)
1. The nanometer thermoelectric active material for the 3D flame electric fireplace is characterized in that: the raw material components of the composite material comprise the following components in parts by weight:
thermoelectric matrix: 20-30 parts of silicon dioxide, 10-20 parts of poly (p-xylylene) and 10-15 parts of polytetrafluoroethylene;
thermoelectric material: 5-20 parts of carbon nano tube, 10-20 parts of Bi, 10-20 parts of Sb, 20-40 parts of porous material, 10-15 parts of graphene, 6-10 parts of copper powder and 10-15 parts of semiconductor material;
the preparation method of the nano thermoelectric active material for the 3D flame electric fireplace comprises the following steps:
step one, preparing a nanowire: respectively carrying out impurity removal treatment on bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, antimony zinc telluride, a mixture of half heusler alloy, bi and Sb, melting after ensuring that no impurity residue exists on the surface, continuing to melt for 10 minutes after the melting temperature is reached, obtaining a bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, antimony zinc telluride, a mixture of half heusler alloy and a molten liquid of Bi and Sb, and injecting the bismuth telluride, the antimony-doped bismuth telluride, the antimony zinc, the mixture of half heusler alloy and the molten liquid of Bi and Sb into porous materials and nanotubes under high pressure, and cooling for 20 minutes at room temperature after the injection is finished, thereby obtaining nanowires;
step two, mixing the base material and the nanowires: putting the nanowire, the silicon dioxide, the poly-p-xylylene and the polytetrafluoroethylene into a chemical vapor deposition furnace, performing vapor deposition, applying the nanowire, the silicon dioxide, the poly-p-xylylene and the polytetrafluoroethylene on the surface of the nanowire, waiting for complete molding, and then placing at a temperature of 40 ℃;
step three, material formation: crushing graphene and copper into particles with the diameter of micrometers, surrounding the graphene powder and copper powder on the surface of the nanowire, firstly dispersing the graphene powder and the copper powder by a grinding dispersion method, then dispersing the graphene powder and the copper powder by an ultrasonic dispersion method to uniformly disperse the graphene powder and the copper powder on the surface of the nanowire, and then forming a mixed film of the graphene and the copper on the surface of the nanowire by an electroplating method to finish the preparation;
step four, ending work: and cleaning the instruments used in the preparation process, and storing the instruments for standby after confirmation.
2. The nano thermoelectric active material for a 3D flame electric fireplace according to claim 1, wherein: thermoelectric matrix: 20 parts of silicon dioxide, 10 parts of poly (p-xylylene) and 10 parts of polytetrafluoroethylene;
thermoelectric material: 5 parts of carbon nano tube, 10 parts of Bi, 10 parts of Sb, 20 parts of porous material, 10 parts of graphene, 6 parts of copper powder and 10 parts of semiconductor material.
3. The nano thermoelectric active material for a 3D flame electric fireplace according to claim 1, wherein: thermoelectric matrix: 25 parts of silicon dioxide, 15 parts of poly (p-xylylene) and 13 parts of polytetrafluoroethylene;
thermoelectric material: 13 parts of carbon nano tube, 15 parts of Bi, 15 parts of Sb, 30 parts of porous material, 13 parts of graphene, 8 parts of copper powder and 13 parts of semiconductor material.
4. The nano thermoelectric active material for a 3D flame electric fireplace according to claim 1, wherein: thermoelectric matrix: 30 parts of silicon dioxide, 20 parts of poly (p-xylylene) and 15 parts of polytetrafluoroethylene;
thermoelectric material: 20 parts of carbon nano tube, 20 parts of Bi, 20 parts of Sb, 40 parts of porous material, 15 parts of graphene, 10 parts of copper powder and 15 parts of semiconductor material.
5. The nano thermoelectric active material for a 3D flame electric fireplace according to claim 1, wherein: 30 parts of silicon dioxide, 20 parts of poly (p-xylylene) and 20 parts of polytetrafluoroethylene;
thermoelectric material: 20 parts of carbon nano tube, 20 parts of Bi, 20 parts of Sb, 40 parts of porous material and 15 parts of semiconductor material.
6. The nano thermoelectric active material for a 3D flame electric fireplace according to claim 1, wherein: the semiconductor material is a mixture of bismuth telluride, antimony doped bismuth telluride, selenium doped bismuth telluride, antimony zinc telluride and half heusler alloy, and the weight ratio of the semiconductor material is 1:1:2:1:1.
7. the nano thermoelectric active material for a 3D flame electric fireplace according to claim 1, wherein: the carbon nanotubes have a square shape (nanocarbon unit 120 c), a round shape (nanocarbon unit 120 a), a hexagonal shape (nanocarbon unit 120 b), an oval shape (nanocarbon unit 120 f), a star shape (nanocarbon unit 120 e), a triangular shape (nanocarbon unit 120 d), and a pentagonal shape (nanocarbon unit 120 g).
8. The nano thermoelectric active material for a 3D flame electric fireplace according to claim 1, wherein: the porous material is anodized aluminum or mica.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931335A (en) * | 2012-10-24 | 2013-02-13 | 东华大学 | Graphene compounded with stibine cobalt base skutterudite thermoelectric material and preparation method of material |
| CN103165808A (en) * | 2011-12-19 | 2013-06-19 | 财团法人工业技术研究院 | Thermoelectric composite material |
| WO2013144107A2 (en) * | 2012-03-29 | 2013-10-03 | Evonik Industries Ag | Thermoelectric components based on pressed powder precursors |
| CN103626138A (en) * | 2012-08-23 | 2014-03-12 | 中央民族大学 | Preparation method of bismuth telluride nano thermoelectric material |
| CN103828081A (en) * | 2011-09-28 | 2014-05-28 | 富士胶片株式会社 | Thermoelectric conversion material and thermoelectric conversion element |
| CN105122485A (en) * | 2013-02-14 | 2015-12-02 | 曼彻斯特大学 | Thermoelectric materials and devices comprising graphene |
| EP3185319A1 (en) * | 2015-12-24 | 2017-06-28 | Alcatel Lucent | Composite material and thermoelectric module |
| CN108690346A (en) * | 2018-04-11 | 2018-10-23 | 杭州牛墨科技有限公司 | A kind of preparation method of high conversion graphene carbon nanotube heating film |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005063038A1 (en) * | 2005-12-29 | 2007-07-05 | Basf Ag | Nano wires or nano tubes manufacturing method for e.g. air conditioning system, involves providing melted mass or solution, which contains thermo electric active material or precursor compounds of thermo electric active materials |
| CN101942577A (en) * | 2009-07-10 | 2011-01-12 | 中国科学院上海硅酸盐研究所 | Thermoelectric composite and preparation method thereof |
| KR101982279B1 (en) * | 2012-04-27 | 2019-08-28 | 삼성전자주식회사 | Thermoelectric material having high-density interface misfit dislocation, and thermoelectric device and module comprising the same |
| US9496475B2 (en) * | 2013-03-28 | 2016-11-15 | The Texas A&M University System | High performance thermoelectric materials |
| KR101695258B1 (en) * | 2014-11-12 | 2017-01-12 | 한국기계연구원 | Thermoelectric composite materials and the method for manufacturing thereof |
-
2020
- 2020-01-14 CN CN202010038031.1A patent/CN111211217B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103828081A (en) * | 2011-09-28 | 2014-05-28 | 富士胶片株式会社 | Thermoelectric conversion material and thermoelectric conversion element |
| CN103165808A (en) * | 2011-12-19 | 2013-06-19 | 财团法人工业技术研究院 | Thermoelectric composite material |
| WO2013144107A2 (en) * | 2012-03-29 | 2013-10-03 | Evonik Industries Ag | Thermoelectric components based on pressed powder precursors |
| CN103626138A (en) * | 2012-08-23 | 2014-03-12 | 中央民族大学 | Preparation method of bismuth telluride nano thermoelectric material |
| CN102931335A (en) * | 2012-10-24 | 2013-02-13 | 东华大学 | Graphene compounded with stibine cobalt base skutterudite thermoelectric material and preparation method of material |
| CN105122485A (en) * | 2013-02-14 | 2015-12-02 | 曼彻斯特大学 | Thermoelectric materials and devices comprising graphene |
| EP3185319A1 (en) * | 2015-12-24 | 2017-06-28 | Alcatel Lucent | Composite material and thermoelectric module |
| CN108690346A (en) * | 2018-04-11 | 2018-10-23 | 杭州牛墨科技有限公司 | A kind of preparation method of high conversion graphene carbon nanotube heating film |
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