CN111211217A - Nano thermoelectric active material for 3D flame electric fireplace and preparation method thereof - Google Patents
Nano thermoelectric active material for 3D flame electric fireplace and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a nanometer thermoelectric active material for a 3D flame electric fireplace and a preparation method thereof, wherein a thermoelectric substrate comprises the following components: 20-30 parts of silicon dioxide, 10-20 parts of poly-p-xylylene and 10-15 parts of polytetrafluoroethylene; thermoelectric material: 5-20 parts of carbon nano tube, 10-20 parts of Bi, 10-20 parts of Sb, 20-40 parts of porous material, 10-15 parts of graphene, 6-10 parts of copper powder and 10-15 parts of semiconductor material, and the preparation of the nanowire is as follows: the invention relates to the technical field of thermoelectric active materials, and discloses a method for removing impurities from bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, zinc antimony, a mixture of half-heusler alloys, Bi and Sb. According to the nano thermoelectric active material for the 3D flame electric fireplace and the preparation method thereof, when the nano thermoelectric active material is prepared, a layer of mixed film of graphene and copper is formed on the surface of a nanowire, the graphene and the copper both have good thermal conductivity and electrical conductivity, the energy loss of the thermoelectric material during thermoelectric conversion can be reduced, the thermoelectric conversion effect is better, and more energy is saved.
Description
Technical Field
The invention relates to the technical field of thermoelectric active materials, in particular to a nano thermoelectric active material for a 3D flame electric fireplace and a preparation method thereof.
Background
3D flame electric fireplace abandons traditional electric fireplace design theory, does not need any formation of image screen, adopts the light of electricity as the light source equally, and the almost unreal dynamic flame directly burns out from the timber heap, directly produces flame in the air, and the flame rises, lifelike as long as the grow that curls upwards along with the pneumatics of surrounding gas, and smog and flame perfectly fuse, reach three-dimensional flame simulation effect.
Thermoelectric materials are functional materials capable of converting thermal energy and electric energy into each other, and with the increasing interest in space exploration, the development of medical physics and the difficulty in increasing resource exploration and exploration activities on the earth, a power supply system which can supply energy by itself and is unattended needs to be developed, and thermoelectric power generation is particularly suitable for the applications.
The thermoelectric active material in the 3D flame electric fireplace is an important component, but the thermoelectric active material used in the existing 3D flame electric fireplace has great energy loss in the conversion process due to the material performance of the thermoelectric active material when converting the thermoelectricity, so that the energy loss is increased, and the thermoelectric active material is not environment-friendly enough.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides a nano thermoelectric active material for a 3D flame electric fireplace and a preparation method thereof, and solves the problems that when thermoelectricity is converted, due to the material performance of the nano thermoelectric active material, the energy loss is great in the conversion process, the energy loss is increased, and the nano thermoelectric active material is not environment-friendly enough.
(II) technical scheme
In order to achieve the purpose, the invention is realized by the following technical scheme: a nanometer thermoelectric active material for a 3D flame electric fireplace comprises the following raw material components in parts by weight:
thermoelectric substrate: 20-30 parts of silicon dioxide, 10-20 parts of poly-p-xylylene and 10-15 parts of polytetrafluoroethylene;
thermoelectric material: 5-20 parts of carbon nano tube, 78-20 parts of Bi10, 10-20 parts of Sb10, 20-40 parts of porous material, 10-15 parts of graphene, 6-10 parts of copper powder and 10-15 parts of semiconductor material.
Preferably, the thermoelectric substrate: 20 parts of silicon dioxide, 10 parts of poly-p-xylylene and 10 parts of polytetrafluoroethylene;
thermoelectric material: 5 parts of carbon nanotubes, 10 parts of Bi, 10 parts of Sb, 20 parts of porous materials, 10 parts of graphene, 6 parts of copper powder and 10 parts of semiconductor materials.
Preferably, the thermoelectric substrate: 25 parts of silicon dioxide, 15 parts of poly-p-xylylene and 13 parts of polytetrafluoroethylene;
thermoelectric material: 13 parts of carbon nanotubes, 15 parts of Bi, 15 parts of Sb, 30 parts of porous materials, 13 parts of graphene, 8 parts of copper powder and 13 parts of semiconductor materials.
Preferably, the thermoelectric substrate: 30 parts of silicon dioxide, 20 parts of poly-p-xylylene and 15 parts of polytetrafluoroethylene;
thermoelectric material: 20 parts of carbon nanotubes, 20 parts of Bi, 20 parts of Sb, 40 parts of porous materials, 15 parts of graphene, 10 parts of copper powder and 15 parts of semiconductor materials.
Preferably, the silicon dioxide is 30 parts, the polyparaxylylene is 20 parts, and the polytetrafluoroethylene is 15 parts;
thermoelectric material: 20 parts of carbon nano tube, 20 parts of Bi, 20 parts of Sb, 40 parts of porous material and 15 parts of semiconductor material.
Preferably, the semiconductor material is a mixture of bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, zinc antimony and half heusler alloy, and the weight ratio of the semiconductor material is 1: 1: 2: 1: 1.
preferably, the carbon nanotube has a square shape (nanocarbon element 120c), a circular shape (nanocarbon element 120a), a hexagonal shape (nanocarbon element 120b), an elliptical shape (nanocarbon element 120f), a star shape (nanocarbon element 120e), a triangular shape (nanocarbon element 120d), and a pentagonal shape (nanocarbon element 120 g).
Preferably, the porous material is anodized aluminum or mica.
The invention also discloses a preparation method of the nano thermoelectric active material for the 3D flame electric fireplace, which comprises the following steps:
step one, preparation of nanowires: respectively removing impurities from bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, zinc antimony, a half-heusler alloy mixture, Bi and Sb, melting after ensuring that no impurities remain on the surface, continuing melting for 10 minutes after reaching the melting temperature to obtain bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, zinc antimony, a half-heusler alloy mixture and Bi and Sb melt liquid, injecting the bismuth telluride, the antimony-doped bismuth telluride, the selenium-doped bismuth telluride, the antimony zinc, the half-heusler alloy mixture and the Bi and Sb melt liquid into a porous material and a nanotube under high pressure, and cooling for 20 minutes at room temperature after injection to obtain a nanowire;
step two, mixing the base material and the nano wire: placing the nanowires, the silicon dioxide, the poly-p-xylylene and the polytetrafluoroethylene in a chemical vapor deposition furnace, performing vapor deposition, applying the nanowires, the silicon dioxide, the poly-p-xylylene and the polytetrafluoroethylene on the surface of the nanowires, waiting for complete molding, and placing at the temperature of 40 ℃;
step three, material formation: crushing graphene and copper powder into particles with the diameter of micron, then surrounding the graphene powder and the copper powder on the surface of a nanowire, firstly dispersing the graphene powder and the copper powder by a grinding dispersion method, then dispersing by an ultrasonic dispersion method to uniformly disperse the graphene powder and the copper powder on the surface of the nanowire, and then forming a mixed film of the graphene and the copper on the surface of the nanowire by an electroplating method to finish the preparation;
step four, ending work: and cleaning the instruments used in the preparation process, and storing for later use after the instruments are determined to be clean.
(III) advantageous effects
The invention provides a nano thermoelectric active material for a 3D flame electric fireplace and a preparation method thereof. Compared with the prior art, the method has the following beneficial effects:
(1) the nanometer thermoelectric active material for the 3D flame electric fireplace and the preparation method thereof are characterized in that a thermoelectric substrate is arranged: 20-30 parts of silicon dioxide, 10-20 parts of poly-p-xylylene and 10-15 parts of polytetrafluoroethylene; thermoelectric material: 5-20 parts of carbon nano tube, 10-20 parts of Bi, 10-20 parts of Sb, 20-40 parts of porous material, 10-15 parts of graphene, 6-10 parts of copper powder and 10-15 parts of semiconductor material, when the nano thermoelectric active material is prepared, a layer of mixed film of graphene and copper is formed on the surface of a nano wire, and the graphene and the copper both have good thermal conductivity and electrical conductivity, so that the energy loss of the thermoelectric material during thermoelectric conversion can be greatly reduced, the thermoelectric conversion effect is better, and more energy is saved.
(2) The nano thermoelectric active material for the 3D flame electric fireplace and the preparation method thereof are characterized in that graphene and copper are crushed into particles with the diameter of micron, then the graphene powder and the copper powder are surrounded on the surface of the nanowire, the graphene powder and the copper powder are dispersed by a grinding dispersion method, then dispersing the graphene powder and the copper powder on the surface of the nanowire uniformly by an ultrasonic dispersion method, then electroplating the nanowire, forming a mixed film of graphene and copper on the surface of the nanowire to finish the preparation, surrounding graphene powder and copper powder on the surface of the nanowire, firstly dispersing the graphene powder and the copper powder by a grinding dispersion method, then, the graphene powder is dispersed by an ultrasonic dispersion method, so that the graphene powder and the copper powder can be dispersed efficiently and stably, and are uniformly dispersed on the surface of the nanowire, so that the graphene powder and the copper powder are more uniformly distributed, and the conductivity and the heat conductivity are better.
(3) The nano thermoelectric active material for the 3D flame electric fireplace and the preparation method thereof are characterized in that the nano wire, the silicon dioxide, the poly-p-xylylene and the polytetrafluoroethylene are all placed in a chemical vapor deposition furnace for vapor deposition, the nano wire, the silicon dioxide, the poly-p-xylylene and the polytetrafluoroethylene are applied to the surface of the nano wire, after the nano wire, the silicon dioxide, the poly-p-xylylene and the polytetrafluoroethylene are completely formed, the nano wire, the silicon dioxide, the poly-p-xylylene and the polytetrafluoroethylene are placed at 40 ℃ after the nano wire is completely formed, the nano wire, the silicon dioxide, the poly-p-xylylene and the polytetrafluoroethylene are applied to the surface of the nano wire through.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the tables in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to table 1, the embodiment of the present invention provides four technical solutions: a preparation method of a nano thermoelectric active material for a 3D flame electric fireplace specifically comprises the following steps:
the first embodiment is as follows:
step one, preparation of nanowires: respectively removing impurities from 10 parts of bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, zinc antimony and a half-heusler alloy mixture, 10 parts of Bi and 10 parts of Sb, melting after ensuring that no impurities are left on the surface, continuing to melt for 10 minutes after reaching the melting temperature to obtain bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, zinc antimony and half-heusler alloy mixture and melt of Bi and Sb, injecting the bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, antimony zinc and half-heusler alloy mixture and melt of Bi and Sb into 20 parts of porous materials and 5 parts of nanotubes under high pressure, and cooling at room temperature for 20 minutes after injection to obtain nanowires;
step two, mixing the base material and the nano wire: placing the nanowires, 20 parts of silicon dioxide, 10 parts of poly-p-xylylene and 10 parts of polytetrafluoroethylene in a chemical vapor deposition furnace, performing vapor deposition, applying the nanowires, the silicon dioxide, the poly-p-xylylene and the polytetrafluoroethylene on the surfaces of the nanowires, waiting for complete molding, and placing at the temperature of 40 ℃;
step three, material formation: crushing graphene and copper powder into particles with the diameter of micron, then surrounding 10 parts of graphene powder and 6 parts of copper powder on the surface of a nanowire, firstly dispersing the graphene powder and the copper powder by a grinding dispersion method, then dispersing by an ultrasonic dispersion method to uniformly disperse the graphene powder and the copper powder on the surface of the nanowire, and then forming a mixed film of the graphene and the copper on the surface of the nanowire by an electroplating method to finish the preparation;
step four, ending work: and cleaning the instruments used in the preparation process, and storing for later use after the instruments are determined to be clean.
Example two:
step one, preparation of nanowires: respectively removing impurities from 13 parts of bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, zinc antimony, a half-heusler alloy mixture, 15 parts of Bi and 15 parts of Sb, melting after ensuring that no impurities remain on the surface, continuing melting for 10 minutes after reaching the melting temperature to obtain bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, zinc antimony, a half-heusler alloy mixture and melts of Bi and Sb, injecting the bismuth telluride, the antimony-doped bismuth telluride, the selenium-doped bismuth telluride, the antimony zinc, the half-heusler alloy mixture and the melts of Bi and Sb into 30 parts of porous materials and 13 parts of nanotubes under high pressure, and cooling for 20 minutes at room temperature after injection to obtain nanowires;
step two, mixing the base material and the nano wire: placing the nanowires, 25 parts of 15 parts of silicon dioxide, poly-p-xylylene and 15 parts of polytetrafluoroethylene in a chemical vapor deposition furnace, performing vapor deposition, applying the nanowires, the silicon dioxide, the poly-p-xylylene and the polytetrafluoroethylene on the surfaces of the nanowires, waiting for complete molding, and placing at the temperature of 40 ℃;
step three, material formation: crushing 13 parts of graphene and 8 parts of copper powder into particles with the diameter of micron, then surrounding the graphene powder and the copper powder on the surface of a nanowire, firstly dispersing the graphene powder and the copper powder by a grinding dispersion method, then dispersing by an ultrasonic dispersion method to uniformly disperse the graphene powder and the copper powder on the surface of the nanowire, and then forming a mixed film of the graphene and the copper on the surface of the nanowire by an electroplating method to finish the preparation;
step four, ending work: and cleaning the instruments used in the preparation process, and storing for later use after the instruments are determined to be clean.
Example three:
step one, preparation of nanowires: respectively removing impurities from 15 parts of bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, zinc antimony and a half-heusler alloy mixture, 20 parts of Bi and 20 parts of Sb, melting after ensuring that no impurities remain on the surface, continuing melting for 10 minutes after reaching the melting temperature to obtain bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, zinc antimony and half-heusler alloy mixture and melt of Bi and Sb, injecting the bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, antimony-doped bismuth telluride, zinc antimony and half-heusler alloy mixture and melt of Bi and Sb into 40 parts of porous materials and 20 parts of nanotubes under high pressure, and cooling for 20 minutes at room temperature after injection to obtain nanowires;
step two, mixing the base material and the nano wire: placing the nanowires, 30 parts of silicon dioxide, 20 parts of poly-p-xylylene and 20 parts of polytetrafluoroethylene in a chemical vapor deposition furnace, performing vapor deposition, applying the nanowires, the silicon dioxide, the poly-p-xylylene and the polytetrafluoroethylene on the surfaces of the nanowires, waiting for complete molding, and placing at the temperature of 40 ℃;
step three, material formation: crushing 15 parts of graphene and 10 parts of copper powder into particles with the diameter of micron, then surrounding the graphene powder and the copper powder on the surface of a nanowire, firstly dispersing the graphene powder and the copper powder by a grinding dispersion method, then dispersing by an ultrasonic dispersion method to uniformly disperse the graphene powder and the copper powder on the surface of the nanowire, and then forming a mixed film of the graphene and the copper on the surface of the nanowire by an electroplating method to finish the preparation;
step four, ending work: and cleaning the instruments used in the preparation process, and storing for later use after the instruments are determined to be clean.
Example four:
step one, preparation of nanowires: respectively removing impurities from 40 parts of bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, zinc antimony and a half-heusler alloy mixture, 20 parts of Bi and 20 parts of Sb, melting after ensuring that no impurities are left on the surface, continuing to melt for 10 minutes after reaching the melting temperature to obtain bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, zinc antimony and half-heusler alloy mixture and melt of Bi and Sb, injecting the bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, antimony zinc and half-heusler alloy mixture and melt of Bi and Sb into 15 parts of porous materials and 20 parts of nanotubes under high pressure, and cooling at room temperature for 20 minutes after injection to obtain nanowires;
step two, mixing the base material and the nano wire: placing the nanowires, 30 parts of silicon dioxide, 20 parts of poly-p-xylylene and 20 parts of polytetrafluoroethylene in a chemical vapor deposition furnace, performing vapor deposition, applying the nanowires, the silicon dioxide, the poly-p-xylylene and the polytetrafluoroethylene on the surfaces of the nanowires, waiting for complete molding, and placing at the temperature of 40 ℃;
step three, material formation: crushing graphene and copper powder into particles with the diameter of micron, then surrounding the graphene powder and the copper powder on the surface of a nanowire, firstly dispersing the graphene powder and the copper powder by a grinding dispersion method, then dispersing by an ultrasonic dispersion method to uniformly disperse the graphene powder and the copper powder on the surface of the nanowire, and then forming a mixed film of the graphene and the copper on the surface of the nanowire by an electroplating method to finish the preparation;
step four, ending work: and cleaning the instruments used in the preparation process, and storing for later use after the instruments are determined to be clean.
Comparative experiment
The existing manufacturer can produce four kinds of nano thermoelectrically active materials for the 3D flame electric fireplace according to claim 1, and after the nano thermoelectrically active materials for the four kinds of 3D flame electric fireplace are processed, the nano thermoelectrically active materials for the four kinds of 3D flame electric fireplace are subjected to a thermoelectric conversion efficiency comparison experiment, and the results are shown in the following table:
thermoelectric conversion efficiency test table:
as can be seen from the above table, the conversion effect of the third embodiment is the best.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (9)
1. A nanometer thermoelectricity active material for a 3D flame electric fireplace is characterized in that: the raw material components of the material comprise the following components in parts by weight:
thermoelectric substrate: 20-30 parts of silicon dioxide, 10-20 parts of poly-p-xylylene and 10-15 parts of polytetrafluoroethylene;
thermoelectric material: 5-20 parts of carbon nano tube, 78-20 parts of Bi10, 10-20 parts of Sb10, 20-40 parts of porous material, 10-15 parts of graphene, 6-10 parts of copper powder and 10-15 parts of semiconductor material.
2. The nano-thermoelectrically active material for the 3D flame electric fireplace as claimed in claim 1, wherein the nano-thermoelectrically active material comprises: thermoelectric substrate: 20 parts of silicon dioxide, 10 parts of poly-p-xylylene and 10 parts of polytetrafluoroethylene;
thermoelectric material: 5 parts of carbon nanotubes, 10 parts of Bi, 10 parts of Sb, 20 parts of porous materials, 10 parts of graphene, 6 parts of copper powder and 10 parts of semiconductor materials.
3. The nano-thermoelectrically active material for the 3D flame electric fireplace as claimed in claim 1, wherein the nano-thermoelectrically active material comprises: thermoelectric substrate: 25 parts of silicon dioxide, 15 parts of poly-p-xylylene and 13 parts of polytetrafluoroethylene;
thermoelectric material: 13 parts of carbon nanotubes, 15 parts of Bi, 15 parts of Sb, 30 parts of porous materials, 13 parts of graphene, 8 parts of copper powder and 13 parts of semiconductor materials.
4. The nano-thermoelectrically active material for the 3D flame electric fireplace as claimed in claim 1, wherein the nano-thermoelectrically active material comprises: thermoelectric substrate: 30 parts of silicon dioxide, 20 parts of poly-p-xylylene and 15 parts of polytetrafluoroethylene;
thermoelectric material: 20 parts of carbon nanotubes, 20 parts of Bi, 20 parts of Sb, 40 parts of porous materials, 15 parts of graphene, 10 parts of copper powder and 15 parts of semiconductor materials.
5. The nano-thermoelectrically active material for the 3D flame electric fireplace as claimed in claim 1, wherein the nano-thermoelectrically active material comprises: 30 parts of silicon dioxide, 20 parts of poly-p-xylylene and 20 parts of polytetrafluoroethylene;
thermoelectric material: 20 parts of carbon nano tube, 20 parts of Bi, 20 parts of Sb, 40 parts of porous material and 15 parts of semiconductor material.
6. The nano-thermoelectrically active material for the 3D flame electric fireplace as claimed in claim 1, wherein the nano-thermoelectrically active material comprises: the semiconductor material is a mixture of bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, zinc antimony and half heusler alloy, and the weight ratio is 1: 1: 2: 1: 1.
7. the nano-thermoelectrically active material for the 3D flame electric fireplace as claimed in claim 1, wherein the nano-thermoelectrically active material comprises: the carbon nanotubes have a square shape (nanocarbon element 120c), a circular shape (nanocarbon element 120a), a hexagonal shape (nanocarbon element 120b), an elliptical shape (nanocarbon element 120f), a star shape (nanocarbon element 120e), a triangular shape (nanocarbon element 120d), and a pentagonal shape (nanocarbon element 120 g).
8. The nano-thermoelectrically active material for the 3D flame electric fireplace as claimed in claim 1, wherein the nano-thermoelectrically active material comprises: the porous material is anodic alumina or mica.
9. A preparation method of a nano thermoelectric active material for a 3D flame electric fireplace is characterized by comprising the following steps: the method comprises the following steps:
step one, preparation of nanowires: respectively removing impurities from bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, zinc antimony, a half-heusler alloy mixture, Bi and Sb, melting after ensuring that no impurities remain on the surface, continuing melting for 10 minutes after reaching the melting temperature to obtain bismuth telluride, antimony-doped bismuth telluride, selenium-doped bismuth telluride, zinc antimony, a half-heusler alloy mixture and Bi and Sb melt liquid, injecting the bismuth telluride, the antimony-doped bismuth telluride, the selenium-doped bismuth telluride, the antimony zinc, the half-heusler alloy mixture and the Bi and Sb melt liquid into a porous material and a nanotube under high pressure, and cooling for 20 minutes at room temperature after injection to obtain a nanowire;
step two, mixing the base material and the nano wire: placing the nanowires, the silicon dioxide, the poly-p-xylylene and the polytetrafluoroethylene in a chemical vapor deposition furnace, performing vapor deposition, applying the nanowires, the silicon dioxide, the poly-p-xylylene and the polytetrafluoroethylene on the surface of the nanowires, waiting for complete molding, and placing at the temperature of 40 ℃;
step three, material formation: crushing graphene and copper powder into particles with the diameter of micron, then surrounding the graphene powder and the copper powder on the surface of a nanowire, firstly dispersing the graphene powder and the copper powder by a grinding dispersion method, then dispersing by an ultrasonic dispersion method to uniformly disperse the graphene powder and the copper powder on the surface of the nanowire, and then forming a mixed film of the graphene and the copper on the surface of the nanowire by an electroplating method to finish the preparation;
step four, ending work: and cleaning the instruments used in the preparation process, and storing for later use after the instruments are determined to be clean.
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