CN111211164B - Field effect device based on solid-state ion conductor - Google Patents
Field effect device based on solid-state ion conductor Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Abstract
A field effect device based on a solid-state ionic conductor is disclosed. According to one embodiment, a solid-state ion conductor based field effect device comprises: target material, source/drain electrode, solid ion conductor, grid voltage electrode; wherein the target material is formed on the solid ion conductor, the source/drain electrodes are positioned on two sides of the target material, and the grid voltage electrode is positioned on the surface of the solid ion conductor. Compared with the traditional field effect device utilizing the oxide dielectric layer, the field effect device has the advantages that the carrier concentration regulation and control capability is greatly improved, and the upper limit of the field effect regulation and control capability is higher.
Description
Technical Field
The present application relates generally to the field of electronic components or microelectronics, and more particularly to a field effect device based on solid-state ionic conductors.
Background
The field effect is a method for adjusting the carrier concentration of a material interface by using an electric field so as to realize the modulation of the conductivity, the most common application at present is a semiconductor field effect transistor, and the change of the conductivity of a semiconductor in multiple orders of magnitude can be regulated and controlled by using gate voltage so as to realize the electrical on-off state. Common gate materials are oxides such as SiO2、HfO2Its controllability is mainly measured by the dielectric constant k of the gate material. A field effect device is similar to a capacitor in principle, and the thinner the insulating layer, the stronger the ability to regulate and control carriers. However, too thin an insulating layer (about 10nm) is prone to leakage and the applied regulation voltage is also prone to exceed the gate breakdown voltage. The material with higher dielectric constant is used, the optimal thickness is about 100nm, and the upper limit of the carrier regulation capacity is about 1e13 cm-2. This limits the applicability to semiconductor materials with lower carrier concentrations, where the metal-type material modulation capability for high carrier concentrations is weak (approximately 0.1%).
Disclosure of Invention
However, the present inventors found in experiments that there is a limitation in the modulation capability of the electric field effect due to the electric polarization of the currently used oxide gate material, and have proposed the present invention in response to this technical problem and other problems in the art.
According to an embodiment, there is provided a solid-state ion conductor-based field effect device comprising: target material, source/drain electrode, solid ion conductor, grid voltage electrode; wherein the target material is formed on the solid ion conductor, the source/drain electrodes are positioned on two sides of the target material, and the grid voltage electrode is positioned on the surface of the solid ion conductor.
In some examples, the target material is a thin film of a semiconductor material, a thin film of a metallic material, or a thin film of a compound metal.
In some examples, the target material has a film thickness of 1nm to 100 nm.
In some examples, the target material is formed over the solid state ion conductor by in situ growth and/or deposition; alternatively, the target material is placed directly on the solid ion conductor by transfer.
In some examples, the solid state ion conductor has a thickness of 30nm to 1 mm.
In some examples, the solid ion conductor is formed by doping Li in an oxide dielectric layer.
In some examples, the grid voltage electrode is on the same surface or an opposite surface of the solid state ion conductor from the target material.
In some examples, the gate voltage of the gate voltage electrode ranges from-6V to + 6V.
In some examples, the above field effect device further comprises: an ion buffer layer film between the target material and the solid-state ion conductor.
In some examples, the ion buffer layer film is SiO2MgO or BN.
According to the embodiment of the application, the solid ion conductor material is used for replacing the existing dielectric material, ions in the voltage regulation and control solid ion conductor move to be gathered at the interface, and a great electric field is formed at the interface to regulate and control the electrical properties of other materials.
The foregoing and other features and advantages of the present application will become apparent from the following description of exemplary embodiments.
Drawings
The above and other objects, features and advantages of the present application will become more apparent by describing in more detail exemplary embodiments thereof with reference to the attached drawings. The accompanying drawings are included to provide a further understanding of the embodiments of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. In the drawings, like reference numbers generally represent like parts or steps.
Fig. 1 illustrates a schematic structural diagram of a field effect device according to an exemplary embodiment of the present application.
Fig. 2 illustrates a schematic structural diagram of a field effect device according to another exemplary embodiment of the present application.
Fig. 3 illustrates a schematic structural diagram of a field effect device according to yet another exemplary embodiment of the present application.
Fig. 4 and 5 illustrate schematic diagrams of a field effect device according to an exemplary embodiment of the present application.
Detailed Description
Hereinafter, exemplary embodiments of the present application will be described in detail with reference to the accompanying drawings. It should be understood that the described embodiments are only some embodiments of the present application and not all embodiments of the present application, and that the present application is not limited by the example embodiments described herein.
As mentioned above, the present invention addresses the limitations of the electric field effect modulation capability due to the electric polarization of the currently commonly used oxide gate material. Current gate materials and HfO with high dielectric constant (high-k)2/ZrO2Physical limits have been reached on material properties. The thickness of the gate material also reaches the physical limit to avoid leakage and breakdown.
To improve the modulation capability of the field effect, a large electric field needs to be formed at the interface, which requires the introduction of a completely new principle material system. In electrochemistry, an ion accumulation layer (a charge double layer) can realize a very strong electric field, ions can move to an interface under the action of an external electric field to be accumulated to generate a very large electric field, and the material with high carrier concentration can be electrically modulated. Ions with smaller radii can even be embedded in the material under the action of an electric field to achieve a more powerful electrical modulation.
The invention utilizes the ion layer to realize the electrical regulation and control of materials, and can realize the regulation and control of materials with high carrier concentration, such as metal films, which has great effect on the development of novel functional devices.
The ion conductor mainly has three forms of liquid, gel and all-solid, and the conduction mode of the ion conductor is completely from the movement of ions in the ion conductor. The solid ion conductor material has the best stability, is easy to integrate and has better device performance. The currently commonly used solid ionic materials include perovskite type, garnet type, sulfide type and NASICON type, and are mainly used as electrode materials in lithium ion batteries.
Solid ionic materials like those typically used, such as Li3xLa2/3-xTiO3、Li4SiO4The conductive channels are all from Li+The movement in the oxide frame can be in the oxide dielectric layer (SiO) commonly used at present2/HfO2/ZrO2) The Li, Na and the like are doped in the material, so that the capability of adding an ion conductor can be improved, and the regulation and control of a current carrier are improved.
Fig. 1, 2 and 3 respectively illustrate the structure of a field effect device 10 according to various exemplary embodiments of the present application. As shown in fig. 1, 2, and 3, the field effect device of the embodiment of the present application may include: target material 11, source/drain electrodes 12, solid-state ion conductor 13, and gate voltage electrode 14.
In the embodiment of the application, the core part of the field effect device is a heterojunction including the target material 11 and the solid ion conductor 13, the heterojunction is a functional part of the device, and the better the interface cleanliness of the heterojunction is, the better the device performance is.
In the examples of fig. 1, 2 and 3, the target material 11 may be formed over a solid ion conductor 13. In the example of fig. 1, the target material 11 may be formed directly on the surface of the solid ion conductor 13 opposite to the surface on which the gate electrode 14 is located. In the example of fig. 2, the target material 11 may be formed directly on the surface of the solid ion conductor 13 and the surface is the same as the surface on which the gate voltage electrode 14 is located. The target material 11 is formed on the ion buffer layer film 16 on the surface of the solid ion conductor 13, and the ion buffer layer film 16 can effectively prevent ions in the solid ion conductor 13 from being embedded into the target material 11 to affect the performance of the field effect device.
In the examples of fig. 1, 2 and 3, the target material 11 may be any material that is suitable for a field effect device. In some examples, the target material 11 may be a thin film of semiconductor material, such as Si, GaAs, GaN, InSe, MoS2And the like. In some examples, the target material 11 may be a metal type material, which can achieve considerable electrical control, such as metal thin films of Au, Pt, Cu, Al, Pb. Furthermore, the target material 11 may be a compound metal thin film, for example, NbSe2、FeSe、TiTe2And the like.
In the examples of fig. 1, 2 and 3, the thickness of the target material 11 may be set according to the performance requirements and specification requirements of the field effect device itself. In some examples, the film thickness of the target material 11 may be 1nm to 100nm, for example, the film thickness of the target material 11 may be 1nm, 20nm, 50nm, 70nm, 100nm, etc., and the channel size of the corresponding field effect device may be 10nm to 100 um.
In the examples of fig. 1, 2 and 3, the target material 11 may be formed over the solid state ion conductor 13 in various applicable ways. In some examples, the target material 11 may be formed on the solid ion conductor 13 by in-situ growth/deposition, or the like. For example, when the target material 11 is Si or GaAs, it may be formed on the surface of the solid-state ion conductor 13 or on the surface of the ion buffer layer thin film on the surface of the solid-state ion conductor by vacuum thin film deposition. In some examples, the target material 11 may be placed on the surface of the solid ion conductor 13 or on the surface of the ion buffer layer film on the surface of the solid ion conductor by transfer. For example, target materials11 is InSe, MoS2When the two-dimensional material is used, the two-dimensional material can be directly placed on the surface of the solid ion conductor 13 or the surface of the ion buffer layer film 16 on the surface of the solid ion conductor 13. In some examples, the solid-state ion conductor 13 may also be deposited/transferred onto the target material 11, as may the construction of a heterojunction. It is to be understood that, in the embodiment of the present application, the target material 11 may also be formed on the solid ion conductor 13 in any other applicable manner.
In the examples of fig. 1, 2 and 3, the thickness of the solid ion conductor 13 can be set according to the performance requirements and specification requirements of the field effect device itself. In some examples, the thickness of the solid ion conductor 13 may be 30nm to 1 mm. For example, the thickness of the solid ion conductor 13 may be 30nm, 50nm, 100nm, 110nm, 300nm, 500nm, 700nm, 100um, 1mm, or the like.
In the examples of fig. 1, 2 and 3, the solid ion conductor 13 may be formed beneath the target material 11 in various applicable ways. In some examples, the solid ion conductor 13 may be formed by doping Li in an oxide dielectric layer. In one implementation in this example, Li may be introduced into the dielectric layer of oxide by chemical doping or physical doping (e.g., ion implantation) to form the solid ion conductor 13. This naturally transforms the oxide gate into a solid ion conductor gate that is compatible with current semiconductor manufacturing processes. Specifically, Li in the oxide dielectric layer when the gate voltage is applied+The voltage is moved to the heterojunction interface under the action of an electric field, so that the voltage is completely distributed in the range of about 1nm thick at the interface to achieve the purpose of realizing the modulation of the carrier concentration. In contrast, the oxide dielectric layer most commonly used at present has a thickness of about 100nm, and the capacitance of the oxide dielectric layer is only about 1% of the ionic layer in terms of the principle of the capacitor, i.e. about 1% of the carrier concentration control capability.
In the examples shown in fig. 1, 2 and 3, the source/drain electrodes 12 are located on both sides of the target material 11. In some examples, source/drain electrode 12 may be implemented as a deposited metal. In some examples, the electrode material of source/drain electrode 12 may be, but is not limited to, Ti/Au, Cr/Au.
In the embodiment of the present application, the gate electrode 14 is located on the surface of the solid ion conductor 13. Specifically, the grid voltage electrode 14 may be on the same surface or an opposite surface of the solid-state ion conductor 13 as the target material 11. In the example of fig. 1 and 3, the grid electrode 14 is on the opposite surface of the solid ion conductor 13 from the target material 11. In the example of fig. 2, the grid electrode 14 is on the same surface of the solid ion conductor 13 as the target material 11. In some examples, the gate voltage of the gate voltage electrode 14 may be in a range of-6V to +6V, and modulation of high carrier concentration may be achieved in the gate voltage range. In other examples, the gate voltage may be in other ranges not exceeding 6V, for example, the gate voltage of the gate voltage electrode 14 may be in the range of-4V to +4V, -2V to +2V, etc., so as to avoid the gate voltage exceeding about 6V to cause ion intercalation and electrochemical reaction.
In some examples, the gate electrode 14 may be implemented by depositing metal. In some examples, the electrode material of the gate electrode 14 may be, but is not limited to, Ti/Au, Cr/Au.
In the embodiment of the present application, the field effect device may further include a substrate 15, and the substrate 15 is optional, so as to facilitate integration with other functional devices to realize devices with complex functions. The location of the substrate 15 is shown in the example of fig. 2, and the substrate 15 may be located below the solid ion conductor 13.
In the embodiment of the application, when the grid voltage is applied, ions in the solid-state ion conductor can be embedded into a target material, and damage is caused to a few material systems. To address the possible effects of ion intercalation, an ion buffer film 16 may be added between the target material 11 and the solid state ion conductor 13, in other words, the field effect device may further include an ion buffer film 16 between the target material 11 and the solid state ion conductor 13. Fig. 3 shows an exemplary structure of a field effect device including the ion buffer layer film 16 according to an embodiment of the present application. In the example of fig. 3, an ion buffer layer film 16 is added between the target material 11 and the solid ion conductor 13. In some examples, the ion buffer layer film 16 can be, but is not limited to, SiO2MgO, BN and the like, which can better protect the field effect device.
Fig. 4 and 5 show the operation principle of the field effect device of the embodiment of the present application.
When the gate voltage V is applied, as shown in FIGS. 4 and 5GWhen the ions in the solid ion conductor 13 move to the interface under the driving of the grid voltage electric field, the charge is accumulated at the interface, and the charge surface density can reach about 1e15 cm-2And an extremely strong electric field is formed, so that the charge distribution in the target material 11 can be greatly changed, and the weakening or enhancement of the charge in the channel is realized for the target material 11. A charge double layer formed at the interface (<1nm, the name in electrochemistry) bears almost all grid potential, thereby achieving the surface density of about 1e15 cm for the current carrier regulation capacity of the target material-2. The thickness of the insulating layer with oxide used as the gate electrode cannot generally be less than about 100nm, and from the principle of a capacitor, charge is accumulated on both sides of the gate electrode material, and the modulation capability is about 1% of that of a solid ion conductor.
As shown in FIGS. 4 and 5, when the target material 11 is a semiconductor material, its own carrier concentration generally does not exceed about 1e13 cm-2The control capability is about 100 times higher than that of the traditional oxide grid, namely the thickness of the target material can be generally 1 nm-1 um. When the target material 11 is a metal type material, its own carrier concentration is about 1e13 cm-2～1e15 cm-2The electrical control is realized within an appreciable range, and the thickness of the target material 11 can be generally 1nm to 100 nm.
The working principle of applying a positive gate voltage, which can achieve an enhancement of the areal density of electrons in the material, is given in fig. 4 and 5. When a negative gate voltage is applied, a corresponding reduction in the areal density of electrons in the material can be achieved.
The field effect device provided by the embodiment of the application mainly uses the solid-state ion conductor as the grid electrode, uses the target material and the solid-state ion conductor to form the heterojunction, utilizes the grid voltage to regulate and control the ions to gather on the interface of the heterojunction in principle, forms a great electric field at the interface to regulate and control the electrical properties of other materials, not only can realize stronger modulation on the semiconductor material commonly used at present, but also can realize electrical modulation on the metal type material, and compared with the traditional field effect device using an oxide dielectric layer, the upper limit of the regulation and control capacity is greatly improved.
The foregoing describes the general principles of the present application in conjunction with specific embodiments, however, it is noted that the advantages, effects, etc. mentioned in the present application are merely examples and are not limiting, and they should not be considered essential to the various embodiments of the present application. Furthermore, the foregoing disclosure of specific details is for the purpose of illustration and description and is not intended to be limiting, since the foregoing disclosure is not intended to be exhaustive or to limit the disclosure to the precise details disclosed.
The block diagrams of devices, apparatuses, systems referred to in this application are only given as illustrative examples and are not intended to require or imply that the connections, arrangements, configurations, etc. must be made in the manner shown in the block diagrams. These devices, apparatuses, devices, systems may be connected, arranged, configured in any manner, as will be appreciated by those skilled in the art. Words such as "including," "comprising," "having," and the like are open-ended words that mean "including, but not limited to," and are used interchangeably therewith. The words "or" and "as used herein mean, and are used interchangeably with, the word" and/or, "unless the context clearly dictates otherwise. The word "such as" is used herein to mean, and is used interchangeably with, the phrase "such as but not limited to".
It should also be noted that in the devices, apparatuses, and methods of the present application, the components or steps may be decomposed and/or recombined. These decompositions and/or recombinations are to be considered as equivalents of the present application.
The previous description of the disclosed aspects is provided to enable any person skilled in the art to make or use the present application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other aspects without departing from the scope of the application. Thus, the present application is not intended to be limited to the aspects shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
The foregoing description has been presented for purposes of illustration and description. Furthermore, the description is not intended to limit embodiments of the application to the form disclosed herein. While a number of example aspects and embodiments have been discussed above, those of skill in the art will recognize certain variations, modifications, alterations, additions and sub-combinations thereof.
Claims (8)
1. A solid-state ionic conductor based field effect device comprising:
a target material;
source/drain electrodes;
a solid-state ion conductor;
a gate voltage electrode;
an ion buffer layer film between the target material and the solid-state ion conductor;
wherein the target material is formed on the solid ion conductor, the source/drain electrodes are positioned at two sides of the target material, the grid voltage electrode is positioned on the surface of the solid ion conductor,
the grid voltage electrode and the target material are on the same surface of the solid-state ion conductor.
2. The field effect device of claim 1, wherein the target material is a thin film of a semiconductor material, a thin film of a metal type material, or a thin film of a compound metal.
3. The field effect device of claim 1, wherein the target material has a film thickness of 1nm to 100 nm.
4. The field effect device of claim 1, 2 or 3,
the target material is formed on the solid ion conductor by in-situ growth and/or deposition; or,
the target material is placed directly on the solid ion conductor by transfer.
5. The field effect device of claim 1, wherein the solid state ion conductor has a thickness of 30nm to 1 mm.
6. The field effect device of claim 1 or 5, wherein the solid state ion conductor is formed by doping Li in an oxide dielectric layer.
7. The field effect device of claim 1, wherein the gate voltage of the gate voltage electrode ranges from-6V to + 6V.
8. The field effect device of claim 1, wherein the ion buffer layer film is SiO2MgO or BN.
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