CN111209675B - Simulation method and device of power electronic device, terminal equipment and storage medium - Google Patents
Simulation method and device of power electronic device, terminal equipment and storage medium Download PDFInfo
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Abstract
The invention discloses a simulation method, a simulation device, terminal equipment and a storage medium of a power electronic device, comprising the following steps: constructing a parameterized three-dimensional model of the power electronic device to be simulated; carrying out simulation calculation on preset sample points by adopting a parameterized three-dimensional model to obtain a full-freedom solution under each sample point; taking the full-freedom solution under the sample point as a sample space of the full-freedom solution of the parameter to be simulated; the parameters to be simulated are one or two of the structural position parameters and the material parameters of the parameterized three-dimensional model, and the parameters to be simulated and the parameter types of the sample points are in one-to-one correspondence; constructing a low-dimensional stiffness matrix for simulation calculation in the parameterized three-dimensional model based on the sample space; the parameters to be simulated are input into the low-dimensional rigidity matrix to obtain the simulation result of the power electronic device to be simulated, so that the analysis efficiency of the power electronic device simulation can be effectively improved, and the calculation complexity is greatly reduced.
Description
Technical Field
The present invention relates to the field of power electronic device simulation technologies, and in particular, to a power electronic device simulation method, a device, a terminal device, and a storage medium.
Background
With the increase of the voltage class of the power system, the performance requirements on the electrical equipment in the system are also increased. In high-voltage converter stations a converter valve is a very important device, whereas a power electronic switching device is a component of the valve. The switching device can generate through-flow loss and switching loss in the process of passing high current and switching off, and the energy loss can be forwarded to be heat which needs to be timely dissipated, otherwise, the operation temperature of the valve is too high to age, or the device is damaged due to the fact that the local temperature is too high. Therefore, the heat and radiating characteristics of the power electronic device are further studied, and the reasonable design of the material structural parameters of the power electronic device or the module is beneficial to ensuring the safe, reliable and stable operation of the heat exchange station. However, when the finite element method is adopted for thermal analysis, the calculation amount is large after grid division is performed on a calculation model formed by a module consisting of a plurality of power electronic devices due to small size of the power electronic devices, more interfaces of each layer, and low efficiency.
Disclosure of Invention
The embodiment of the invention provides a simulation method, a simulation device, terminal equipment and a storage medium for a power electronic device, which can effectively improve the analysis efficiency of the simulation of the power electronic device and greatly reduce the calculation complexity.
An embodiment of the present invention provides a simulation method for a power electronic device, including:
constructing a parameterized three-dimensional model of the power electronic device to be simulated;
performing simulation calculation on preset sample points by adopting the parameterized three-dimensional model to obtain a full-freedom solution under each sample point;
taking the full-freedom solution under the sample point as a sample space of the full-freedom solution of the parameter to be simulated; the parameters to be simulated are one or two of structural position parameters and material parameters of the parameterized three-dimensional model, and the parameters to be simulated and the parameter types of the sample points are in one-to-one correspondence;
constructing a low-dimensional stiffness matrix for simulation calculation in the parameterized three-dimensional model based on the sample space;
and inputting the parameters to be simulated into the low-dimensional rigidity matrix to obtain a simulation result of the power electronic device to be simulated.
As an improvement of the above scheme, the construction of the parameterized three-dimensional model of the power electronic device to be simulated specifically includes:
constructing a geometric model of the power electronic device to be simulated;
extracting structural position parameters and corresponding material parameters of the geometric model;
and constructing a parameterized three-dimensional model corresponding to the geometric model according to the structural position parameters and the material parameters.
As an improvement of the above solution, the constructing a parameterized three-dimensional model of the power electronic device to be simulated further includes:
setting material parameters corresponding to structural position parameters of geometric parts in the geometric model;
determining a thermal load by adopting a preset energy consumption model, and compiling working condition information;
determining solving setting parameters;
and carrying out parameterized modeling on the geometric model according to the structural position parameters, the material parameters, the working condition information and the solving setting parameters to obtain the parameterized three-dimensional model.
As an improvement of the above solution, the constructing a low-dimensional stiffness matrix for simulation calculation in the parameterized three-dimensional model based on the sample space specifically includes:
the low-dimensional stiffness matrix is determined by the following formula, which is as follows:
U T k(x)Uα＝U T q
wherein ,
alpha is an interpolation coefficient, U is a full-degree-of-freedom solution under the sample points, k (x) is an overall stiffness matrix, q is a load matrix, and U is a solution space formed by the full-degree-of-freedom solution solved by the sample points.
Another embodiment of the present invention correspondingly provides a simulation apparatus for a power electronic device, including:
the parameterized three-dimensional model construction module is used for constructing a parameterized three-dimensional model of the power electronic device to be simulated;
the sample point simulation module is used for performing simulation calculation on preset sample points by adopting the parameterized three-dimensional model to obtain a full-freedom solution under each sample point;
the sample space selection module is used for taking the full-freedom solution under the sample points as a sample space of the full-freedom solution of the parameters to be simulated; the parameters to be simulated are one or two of structural position parameters and material parameters of the parameterized three-dimensional model, and the parameters to be simulated and the parameter types of the sample points are in one-to-one correspondence;
the low-dimensional rigidity matrix construction module is used for constructing a low-dimensional rigidity matrix for simulation calculation in the parameterized three-dimensional model based on the sample space;
and the power electronic device simulation module is used for inputting the parameters to be simulated into the low-dimensional rigidity matrix to obtain a simulation result of the power electronic device to be simulated.
As an improvement of the above scheme, the parameterized three-dimensional model building module includes a geometric model unit, a parameter extraction unit and a first modeling unit;
the geometric model unit is used for constructing a geometric model of the power electronic device to be simulated;
the parameter extraction unit is used for extracting structural position parameters of the geometric model and corresponding material parameters thereof;
the first parameterized three-dimensional model unit is used for constructing a parameterized three-dimensional model corresponding to the geometric model according to the structural position parameters and the material parameters.
As an improvement of the scheme, the parameterized three-dimensional model construction module further comprises a material parameter setting unit, a working condition information compiling unit, a solving setting parameter determining unit and a second modeling unit;
the material parameter setting unit is used for setting material parameters corresponding to the structural position parameters of the geometric parts in the geometric model;
the working condition information compiling unit is used for determining the thermal load by adopting a preset energy loss model and compiling working condition information;
the solution setting parameter determining unit is used for determining solution setting parameters;
the second modeling unit is configured to perform parametric modeling on the geometric model according to the structural position parameter, the material parameter, the operating condition information and the solution setting parameter, so as to obtain the parametric three-dimensional model.
As an improvement of the above-described aspect, the low-dimensional stiffness matrix construction module includes a low-dimensional stiffness matrix determination unit;
the low-dimensional rigidity matrix determining unit is used for determining the low-dimensional rigidity matrix by the following formula, wherein the specific formula is as follows:
U T k(x)Uα＝U T q
wherein ,
alpha is an interpolation coefficient, U is a full-degree-of-freedom solution under the sample points, k (x) is an overall stiffness matrix, q is a load matrix, and U is a solution space formed by the full-degree-of-freedom solution solved by the sample points.
Compared with the prior art, the simulation method and the simulation device for the power electronic device disclosed by the embodiment of the invention have the advantages that the parameterized three-dimensional model of the power electronic device to be simulated is built, the parameterized three-dimensional model is adopted to perform simulation calculation on the preset sample points, the full-freedom degree solution under each sample point is obtained, the full-freedom degree solution under each sample point is further used as the sample space of the full-freedom degree solution of the parameter to be simulated, the sample points and the parameter to be simulated are one or two of the structural position parameter and the material parameter of the parameterized three-dimensional model, the low-dimensional rigidity matrix for simulation calculation in the parameterized three-dimensional model is built based on the sample space, and therefore the simulation result of the power electronic device to be simulated is obtained, the calculation amount and the complexity of the parameterized three-dimensional model are effectively reduced, the modeling efficiency is effectively improved, the simulation solution is then performed by adopting the low-dimensional rigidity matrix, the calculation amount and the simulation equation of the power electronic device to be simulated is greatly reduced, the calculation efficiency of the simulation equation is further reduced, and the hardware is effectively required to be calculated by the simulation equation is further reduced.
Another embodiment of the present invention provides a simulation terminal device of a power electronic device, including a processor, a memory, and a computer program stored in the memory and configured to be executed by the processor, where the processor executes the computer program to implement the simulation method of the power electronic device according to the embodiment of the present invention.
Another embodiment of the present invention provides a storage medium, where the computer readable storage medium includes a stored computer program, where when the computer program runs, the device where the computer readable storage medium is located is controlled to execute the simulation method of the power electronic device according to the foregoing embodiment of the present invention.
Drawings
Fig. 1 is a flow chart of a simulation method of a power electronic device according to a first embodiment of the present invention;
fig. 2 is a schematic structural diagram of a power electronic device according to a first embodiment of the present invention;
FIG. 3 is a schematic diagram of a module structure composed of power electronic devices according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a parameterized three-dimensional model of a power electronic device according to one embodiment of the present invention;
fig. 5 is a schematic structural diagram of a simulation apparatus for a power electronic device according to a second embodiment of the present invention;
fig. 6 is a schematic structural diagram of a simulation terminal device of a power electronic device according to a third embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
Referring to fig. 1, a flowchart of a simulation method of a power electronic device according to an embodiment of the present invention is shown, where the method includes steps S101 to S105.
S101, constructing a parameterized three-dimensional model of the power electronic device to be simulated.
For example, referring to fig. 2, a schematic structural diagram of a power electronic device according to a first embodiment of the present invention is shown, where, taking a high-capacity power electronic device as an example, the power electronic device structure includes, from top to bottom, a semiconductor device (such as a diode and an IGBT), a DCB board, a substrate, and a heat spreader, and each two layers have a solder layer therebetween, where materials of the solder layers are different. In addition, the DCB plate consists of an upper copper layer, a lower copper layer and a middle ceramic layer. Further, referring to fig. 3, a schematic diagram of a module structure formed by power electronic devices according to an embodiment of the present invention is provided, and since a power electronic device module is typically packaged by a plurality of devices, heat transfer between the devices can affect each other, and in order to consider the heat dissipation situation of the whole to be evaluated in conformity with the structure of the actual device, a model of the whole formed by the plurality of devices is typically built.
Preferably, step S101 specifically includes:
constructing a geometric model of the power electronic device to be simulated;
extracting structural position parameters and corresponding material parameters of the geometric model;
and constructing a parameterized three-dimensional model corresponding to the geometric model according to the structural position parameters and the material parameters.
Preferably, step S101 further includes:
setting material parameters corresponding to structural position parameters of geometric parts in the geometric model;
determining a thermal load by adopting a preset energy consumption model, and compiling working condition information;
determining solving setting parameters;
and carrying out parameterized modeling on the geometric model according to the structural position parameters, the material parameters, the working condition information and the solving setting parameters to obtain the parameterized three-dimensional model.
It should be noted that, before the temperature field simulation calculation, first, key structural parameters required for modeling the power electronic device are determined, where the key structural parameters may include, but are not limited to, structural position parameters, material parameters, operating condition information, and solution setting parameters. In particular, a geometric model of a multilayer structure of a power electronics device is built. Meanwhile, corresponding material parameters are set for different geometric parts, thermal load is determined through energy loss calculation, working condition information is compiled, solution setting is set according to preset temperature field analysis software, and convection heat transfer coefficients or forced boundary temperature is set.
In this embodiment, referring to fig. 4, a schematic diagram of a parameterized three-dimensional model of a power electronic device according to an embodiment of the present invention is provided, where the parameterized three-dimensional model for simulation calculation is composed of a structure and a material, and the model includes structural position parameters and material parameters of each component of the power electronic device, where the structural position parameters are specifically an x-direction structural parameter, a y-direction structural parameter, and a z-direction structural parameter, or a length parameter, a width parameter, and a height parameter. For example, the structure data can be managed by inputting a table, and when a proper model is established, only the corresponding structure position parameters are required to be input to form the three-dimensional model. In addition, each layer structure corresponds to a respective material parameter, namely a material property, wherein for temperature field calculation, the material property is preferably a thermal conductivity coefficient of the material, a power parameter of the heat sink and the like. Thus, the material parameters of the corresponding structure are given in the model. Further, after the structural position parameters and the material parameter tables are input, a parameterized three-dimensional model of the power electronic device is obtained in response to the model generation instruction. Meanwhile, a module composed of power electronic devices as shown in fig. 3 can be formed in a splicing mode, so that the whole simulation calculation is convenient to develop.
S102, performing simulation calculation on preset sample points by adopting the parameterized three-dimensional model to obtain a full-freedom solution under each sample point.
S103, taking the full-freedom solution under the sample point as a sample space of the full-freedom solution of the parameter to be simulated; the parameters to be simulated are one or two of structural position parameters and material parameters of the parameterized three-dimensional model, and the parameters to be simulated and the parameter types of the sample points are in one-to-one correspondence.
S104, constructing a low-dimensional stiffness matrix for simulation calculation in the parameterized three-dimensional model based on the sample space.
Preferably, step S104 specifically includes:
the low-dimensional stiffness matrix is determined by the following formula, which is as follows:
U T k(x)Uα＝U T q
wherein ,
alpha is an interpolation coefficient, U is a full-degree-of-freedom solution under the sample points, k (x) is an overall stiffness matrix, q is a load matrix, and U is a solution space formed by the full-degree-of-freedom solution solved by the sample points.
S105, inputting the parameters to be simulated into the low-dimensional rigidity matrix to obtain a simulation result of the power electronic device to be simulated.
Note that the sample space is w=span { u } 1 ,u 2 ,…,u n Bringing the parameter u into the original simulation model for solvingIn a high-dimensional stiffness matrix k (x) u=q, and multiplying both sides by U T Obtaining U T k(x)Uα＝U T q. In the embodiment, the low-dimensional stiffness matrix is used for replacing the high-dimensional stiffness matrix used for simulation calculation in the parameterized three-dimensional model, so that the dimension and the calculated amount of an equation set to be solved in the solving process can be effectively reduced, and quick simulation calculation is realized. Further, an interpolation system is obtained by calculating a low-dimensional stiffness matrix, so that an equation solution u is solved about alpha and { u } 1 ,u 2 ,…,u n And finally obtaining a high-precision numerical solution under any input parameter to be simulated by the expression mode.
In a preferred embodiment, when the sample points and the parameters to be simulated are material parameters, step-size sampling is performed on the material parameters in advance, and the parameterized three-dimensional model is adopted to perform simulation calculation on the sample points corresponding to the material parameters, so as to obtain a full-freedom solution of the model under each sample point. Further, the obtained full-freedom solution under the sample points is used as a sample space of the full-freedom solution of the material parameters to be simulated, and a low-dimensional rigidity matrix for simulation calculation is constructed through the sample space. And (3) rapidly calculating to obtain an interpolation system by calculating a low-dimension equation set, so as to obtain an equation solution, and finally obtaining a high-precision numerical solution under any material parameter to be simulated.
In a preferred embodiment, when the sample points and the parameters to be simulated are structural position parameters, step-size sampling is performed on length, width and height parameters in the structural position parameters in advance, and the parameterized three-dimensional model is adopted to perform simulation calculation on the sample points corresponding to the structural position parameters, so as to obtain a full-freedom solution of the model under each sample point. Further, the obtained full-freedom solution under the sample points is used as a sample space of the full-freedom solution of the position parameters of the structure to be simulated, and a low-dimensional rigidity matrix for simulation calculation is constructed through the sample space. And (3) rapidly calculating to obtain an interpolation system by calculating a low-dimension equation set, so as to obtain an equation solution, and finally obtaining a high-precision numerical solution under the position parameters of any structure to be simulated.
In another preferred embodiment, when the sample point and the parameter to be simulated are structural position parameters, step-size sampling is performed on the material parameter, the length, the width and the height of the structural position parameters simultaneously in advance, and the parameterized three-dimensional model is adopted to perform simulation calculation on the sample point corresponding to the parameter, so as to obtain a full-freedom solution of the model under each sample point. Further, the obtained full-freedom solution under the sample points is used as a sample space of the full-freedom solution of the parameters to be simulated, and a low-dimensional rigidity matrix for simulation calculation is constructed through the sample space. And (3) rapidly calculating to obtain an interpolation system by calculating a low-dimension equation set, so as to obtain an equation solution, and finally obtaining a high-precision numerical solution under any parameters to be simulated.
According to the simulation method of the power electronic device, the parameterized three-dimensional model of the power electronic device to be simulated is built, and then the parameterized three-dimensional model is adopted to carry out simulation calculation on preset sample points, so that a full-freedom degree solution under each sample point is obtained, and then the full-freedom degree solution under each sample point is used as a sample space of the full-freedom degree solution of the parameter to be simulated, wherein the sample points and the parameter to be simulated are one or two of the structural position parameter and the material parameter of the parameterized three-dimensional model, the parameter types of the parameter to be simulated and the sample points are in one-to-one correspondence, and then a low-dimensional stiffness matrix for simulation calculation in the parameterized three-dimensional model is built based on the sample space, so that the parameter to be simulated is input into the low-dimensional stiffness matrix, a simulation result of the power electronic device to be simulated is obtained, the calculation amount and the complexity of modeling can be effectively reduced, the modeling efficiency can be effectively improved by building the parameterized three-dimensional model, the simulation solution is carried out by adopting the low-dimensional stiffness matrix, the dimension of the parameter to be solved, the calculation amount to be solved, the calculation capacity of the simulation equation can be effectively reduced, the simulation efficiency of a hardware can be effectively required by a computer can be reduced, and the simulation efficiency is effectively required by a computer is reduced, and the simulation efficiency is further, and the simulation efficiency is reduced.
Example two
Referring to fig. 5, a schematic structural diagram of a simulation device for a power electronic device according to a second embodiment of the present invention includes:
the parameterized three-dimensional model construction module 201 is used for constructing a parameterized three-dimensional model of the power electronic device to be simulated;
the sample point simulation module 202 is configured to perform simulation calculation on preset sample points by using the parameterized three-dimensional model, so as to obtain a full-freedom solution under each sample point;
the sample space selection module 203 is configured to use the full-degree-of-freedom solution under the sample point as a sample space of the full-degree-of-freedom solution of the parameter to be simulated; the parameters to be simulated are one or two of structural position parameters and material parameters of the parameterized three-dimensional model, and the parameters to be simulated and the parameter types of the sample points are in one-to-one correspondence;
a low-dimensional stiffness matrix construction module 204, configured to construct a low-dimensional stiffness matrix for simulation calculation in the parameterized three-dimensional model based on the sample space;
and the power electronic device simulation module 205 is configured to input the parameters to be simulated into the low-dimensional stiffness matrix, and obtain a simulation result of the power electronic device to be simulated.
Preferably, the parameterized three-dimensional model building module 201 includes a geometric model unit, a parameter extraction unit, and a first modeling unit;
the geometric model unit is used for constructing a geometric model of the power electronic device to be simulated;
the parameter extraction unit is used for extracting structural position parameters of the geometric model and corresponding material parameters thereof;
the first parameterized three-dimensional model unit is used for constructing a parameterized three-dimensional model corresponding to the geometric model according to the structural position parameters and the material parameters.
Preferably, the parameterized three-dimensional model construction module 201 further includes a material parameter setting unit, a working condition information compiling unit, a solution setting parameter determining unit, and a second modeling unit;
the material parameter setting unit is used for setting material parameters corresponding to the structural position parameters of the geometric parts in the geometric model;
the working condition information compiling unit is used for determining the thermal load by adopting a preset energy loss model and compiling working condition information;
the solution setting parameter determining unit is used for determining solution setting parameters;
the second modeling unit is configured to perform parametric modeling on the geometric model according to the structural position parameter, the material parameter, the operating condition information and the solution setting parameter, so as to obtain the parametric three-dimensional model.
Preferably, the low-dimensional stiffness matrix construction module 204 includes a low-dimensional stiffness matrix determination unit;
the low-dimensional rigidity matrix determining unit is used for determining the low-dimensional rigidity matrix by the following formula, wherein the specific formula is as follows:
U T k(x)Uα＝U T q
wherein ,
alpha is an interpolation coefficient, U is a full-degree-of-freedom solution under the sample points, k (x) is an overall stiffness matrix, q is a load matrix, and U is a solution space formed by the full-degree-of-freedom solution solved by the sample points.
According to the simulation device for the power electronic device, the parameterized three-dimensional model of the power electronic device to be simulated is built, and then the parameterized three-dimensional model is adopted to carry out simulation calculation on preset sample points, so that a full-freedom degree solution under each sample point is obtained, and then the full-freedom degree solution under each sample point is used as a sample space of the full-freedom degree solution of the parameter to be simulated, wherein the sample points and the parameter to be simulated are one or two of the structural position parameter and the material parameter of the parameterized three-dimensional model, the parameter types of the parameter to be simulated and the sample points are in one-to-one correspondence, and then a low-dimensional stiffness matrix for simulation calculation in the parameterized three-dimensional model is built based on the sample space, so that the parameter to be simulated is input into the low-dimensional stiffness matrix, a simulation result of the power electronic device to be simulated is obtained, the calculation amount and the complexity of modeling can be effectively reduced, the modeling efficiency can be effectively improved by building the parameterized three-dimensional model, the simulation solution is carried out by adopting the low-dimensional stiffness matrix, the dimension of the parameter to be solved, the calculation amount of the parameter to be simulated is greatly reduced, the calculation efficiency is effectively required by a computer is reduced, and the simulation efficiency is further, and the simulation efficiency is required by a computer is effectively reduced by a simulation equation.
Example III
Referring to fig. 6, a schematic structural diagram of a simulation terminal device of a power electronic device according to a third embodiment of the present invention is shown. The simulation terminal apparatus of the power electronic device of this embodiment includes: a processor 301, a memory 302 and a computer program stored in said memory 302 and executable on said processor 301, such as a simulation program of a power electronic device. The processor 301, when executing the computer program, implements the steps of the above-described embodiments of the simulation method for each power electronic device. Alternatively, the processor 301 performs the functions of the modules/units in the above-described apparatus embodiments when executing the computer program.
Illustratively, the computer program may be partitioned into one or more modules/units that are stored in the memory and executed by the processor 301 to perform the present invention. The one or more modules/units may be a series of computer program instruction segments capable of performing specific functions for describing the execution of the computer program in a simulated terminal device of the power electronic device.
The simulation terminal equipment of the power electronic device can be computing equipment such as a desktop computer, a notebook computer, a palm computer, a cloud server and the like. The emulation terminal device of the power electronic device may include, but is not limited to, a processor, a memory. It will be appreciated by those skilled in the art that the schematic diagram is merely an example of a simulated terminal device of a power electronic device and does not constitute a limitation of a simulated terminal device of a power electronic device, and may include more or less components than illustrated, or may combine certain components, or different components, e.g. the simulated terminal device of a power electronic device may also include input and output devices, network access devices, buses, etc.
The processor may be a central processing unit (Central Processing Unit, CPU), other general purpose processors, digital signal processors (Digital Signal Processor, DSP), application specific integrated circuits (Application Specific Integrated Circuit, ASIC), off-the-shelf programmable gate arrays (Field-Programmable Gate Array, FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, or the like. The general purpose processor may be a microprocessor or the processor may be any conventional processor or the like, which is a control center of the power electronics simulation terminal apparatus, connecting the various parts of the entire power electronics simulation terminal apparatus with various interfaces and lines.
The memory may be used to store the computer program and/or module, and the processor may implement various functions of the power electronics' simulated terminal device by running or executing the computer program and/or module stored in the memory and invoking data stored in the memory. The memory may mainly include a storage program area and a storage data area, wherein the storage program area may store an operating system, an application program (such as a sound playing function, an image playing function, etc.) required for at least one function, and the like; the storage data area may store data (such as audio data, phonebook, etc.) created according to the use of the handset, etc. In addition, the memory may include high-speed random access memory, and may also include non-volatile memory, such as a hard disk, memory, plug-in hard disk, smart Media Card (SMC), secure Digital (SD) Card, flash Card (Flash Card), at least one disk storage device, flash memory device, or other volatile solid-state storage device.
Wherein the integrated modules/units of the power electronics' emulated terminal device may be stored in a computer readable storage medium if implemented in the form of software functional units and sold or used as a stand alone product. Based on such understanding, the present invention may implement all or part of the flow of the method of the above embodiment, or may be implemented by a computer program to instruct related hardware, where the computer program may be stored in a computer readable storage medium, and when the computer program is executed by a processor, the computer program may implement the steps of each of the method embodiments described above. Wherein the computer program comprises computer program code which may be in source code form, object code form, executable file or some intermediate form etc. The computer readable medium may include: any entity or device capable of carrying the computer program code, a recording medium, a U disk, a removable hard disk, a magnetic disk, an optical disk, a computer Memory, a Read-Only Memory (ROM), a random access Memory (RAM, random Access Memory), an electrical carrier signal, a telecommunications signal, a software distribution medium, and so forth. It should be noted that the computer readable medium contains content that can be appropriately scaled according to the requirements of jurisdictions in which such content is subject to legislation and patent practice, such as in certain jurisdictions in which such content is subject to legislation and patent practice, the computer readable medium does not include electrical carrier signals and telecommunication signals.
It should be noted that the above-described apparatus embodiments are merely illustrative, and the units described as separate units may or may not be physically separate, and units shown as units may or may not be physical units, may be located in one place, or may be distributed over a plurality of network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment. In addition, in the drawings of the embodiment of the device provided by the invention, the connection relation between the modules represents that the modules have communication connection, and can be specifically implemented as one or more communication buses or signal lines. Those of ordinary skill in the art will understand and implement the present invention without undue burden.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the invention, such changes and modifications are also intended to be within the scope of the invention.
Claims (8)
1. A method of simulating a power electronic device, comprising:
constructing a parameterized three-dimensional model of the power electronic device to be simulated;
performing simulation calculation on preset sample points by adopting the parameterized three-dimensional model to obtain a full-freedom solution under each sample point;
taking the full-freedom solution under the sample point as a sample space of the full-freedom solution of the parameter to be simulated; the parameters to be simulated are one or two of structural position parameters and material parameters of the parameterized three-dimensional model, and the parameters to be simulated and the parameter types of the sample points are in one-to-one correspondence;
constructing a low-dimensional stiffness matrix for simulation calculation in the parameterized three-dimensional model based on the sample space;
inputting the parameters to be simulated into the low-dimensional stiffness matrix to obtain a simulation result of the power electronic device to be simulated;
the constructing a low-dimensional stiffness matrix for simulation calculation in the parameterized three-dimensional model based on the sample space specifically comprises the following steps:
the low-dimensional stiffness matrix is determined by the following formula, which is as follows:
U T k(x)Uα＝U T q
wherein ,
u is a solution space formed by the full-degree-of-freedom solution of the sample point solution, k (x) is an overall stiffness matrix, x is an auxiliary of k and is used for emphasizing that k is the stiffness matrix, alpha is an interpolation coefficient, q is a load matrix, U is the full-degree-of-freedom solution of the sample point, n is the number of groups of the finite element degree-of-freedom solution of the sample point, i represents the ith group of the finite element degree-of-freedom solution, and a i Represents u i Corresponding interpolation coefficient, u i The solution of the entire finite element degree of freedom obtained at the i-th sample point is shown.
2. The method for simulating a power electronic device according to claim 1, wherein the constructing a parameterized three-dimensional model of the power electronic device to be simulated specifically comprises:
constructing a geometric model of the power electronic device to be simulated;
extracting structural position parameters and corresponding material parameters of the geometric model;
and constructing a parameterized three-dimensional model corresponding to the geometric model according to the structural position parameters and the material parameters.
3. The method for simulating a power electronic device according to claim 2, wherein the constructing a parameterized three-dimensional model of the power electronic device to be simulated further comprises:
setting material parameters corresponding to structural position parameters of geometric parts in the geometric model;
determining a thermal load by adopting a preset energy consumption model, and compiling working condition information;
determining solving setting parameters;
and carrying out parameterized modeling on the geometric model according to the structural position parameters, the material parameters, the working condition information and the solving setting parameters to obtain the parameterized three-dimensional model.
4. A simulation apparatus of a power electronic device, comprising:
the parameterized three-dimensional model construction module is used for constructing a parameterized three-dimensional model of the power electronic device to be simulated;
the sample point simulation module is used for performing simulation calculation on preset sample points by adopting the parameterized three-dimensional model to obtain a full-freedom solution under each sample point;
the sample space selection module is used for taking the full-freedom solution under the sample points as a sample space of the full-freedom solution of the parameters to be simulated; the parameters to be simulated are one or two of structural position parameters and material parameters of the parameterized three-dimensional model, and the parameters to be simulated and the parameter types of the sample points are in one-to-one correspondence;
the low-dimensional rigidity matrix construction module is used for constructing a low-dimensional rigidity matrix for simulation calculation in the parameterized three-dimensional model based on the sample space;
the power electronic device simulation module is used for inputting the parameters to be simulated into the low-dimensional rigidity matrix to obtain a simulation result of the power electronic device to be simulated;
the low-dimensional rigidity matrix construction module comprises a low-dimensional rigidity matrix determination unit;
the low-dimensional rigidity matrix determining unit is used for determining the low-dimensional rigidity matrix by the following formula, wherein the specific formula is as follows:
U T k(x)Uα＝U T q
wherein ,
u is a solution space formed by the full-degree-of-freedom solution of the sample point solution, k (x) is an overall stiffness matrix, x is an auxiliary of k and is used for emphasizing that k is the stiffness matrix, alpha is an interpolation coefficient, q is a load matrix, U is the full-degree-of-freedom solution of the sample point, n is the number of groups of the finite element degree-of-freedom solution of the sample point, i represents the ith group of the finite element degree-of-freedom solution, and a i Represents u i Corresponding interpolation coefficient, u i The solution of the entire finite element degree of freedom obtained at the i-th sample point is shown.
5. The simulation apparatus of a power electronic device according to claim 4, wherein the parameterized three-dimensional model construction module includes a geometric model unit, a parameter extraction unit, and a first modeling unit;
the geometric model unit is used for constructing a geometric model of the power electronic device to be simulated;
the parameter extraction unit is used for extracting structural position parameters of the geometric model and corresponding material parameters thereof;
the first modeling unit is used for constructing a parameterized three-dimensional model corresponding to the geometric model according to the structural position parameters and the material parameters.
6. The simulation device of the power electronic device according to claim 5, wherein the parameterized three-dimensional model construction module further comprises a material parameter setting unit, a working condition information compiling unit, a solution setting parameter determining unit and a second modeling unit;
the material parameter setting unit is used for setting material parameters corresponding to the structural position parameters of the geometric parts in the geometric model;
the working condition information compiling unit is used for determining the thermal load by adopting a preset energy loss model and compiling working condition information;
the solution setting parameter determining unit is used for determining solution setting parameters;
the second modeling unit is configured to perform parametric modeling on the geometric model according to the structural position parameter, the material parameter, the operating condition information and the solution setting parameter, so as to obtain the parametric three-dimensional model.
7. A simulation terminal device of a power electronic device, comprising a processor, a memory and a computer program stored in the memory and configured to be executed by the processor, the processor implementing the simulation method of a power electronic device according to any of claims 1 to 3 when the computer program is executed.
8. A computer readable storage medium, characterized in that the computer readable storage medium comprises a stored computer program, wherein the computer program, when run, controls a device in which the computer readable storage medium is located to perform a simulation method of a power electronic device according to any one of claims 1 to 3.
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