CN111208687A - Display panel and display device - Google Patents

Display panel and display device Download PDF

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Publication number
CN111208687A
CN111208687A CN202010032828.0A CN202010032828A CN111208687A CN 111208687 A CN111208687 A CN 111208687A CN 202010032828 A CN202010032828 A CN 202010032828A CN 111208687 A CN111208687 A CN 111208687A
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China
Prior art keywords
light
shielding layer
layer
color
light shielding
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CN202010032828.0A
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Chinese (zh)
Inventor
曹武
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to CN202010032828.0A priority Critical patent/CN111208687A/en
Publication of CN111208687A publication Critical patent/CN111208687A/en
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136209Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136222Colour filters incorporated in the active matrix substrate

Abstract

The application provides a display panel and a display device. The display panel comprises a substrate, a thin film transistor layer, a color film layer and a light shielding layer. The thin film transistor layer comprises at least one thin film transistor. The orthographic projection of the thin film transistor on the shading layer is positioned in the shading layer. According to the TFT device, the light shielding layer is formed on the TFT, and the light shielding layer covers the TFT, so that the problems of on-current and off-current changes of the TFT device caused by reflected light or stray light are effectively solved, and the display effect of the product is improved.

Description

Display panel and display device
Technical Field
The present disclosure relates to display devices, and particularly to a display panel and a display device.
Background
In a Liquid Crystal Display (LCD), a Thin Film Transistor (TFT) device, especially a polysilicon or metal oxide TFT, has a strong light sensitivity characteristic, and is affected by stray light to cause a light leakage phenomenon of the TFT, which interferes with the stability of maintaining the brightness of a picture.
In the existing display panel, the TFT device area is mostly metal wiring, and stray light or reflected light generated by the back light reflected by the upper plate may cause photocurrent when the TFT device is irradiated by the reflected light, which causes on-current and off-current changes of the TFT, thereby affecting the display quality.
Therefore, a new display panel is needed to solve the above technical problems.
Disclosure of Invention
The application provides a display panel and a display device, which are used for solving the problem that stray light or reflected light in the existing display panel irradiates a TFT device to cause the on-current and off-current changes of the TFT.
In order to solve the above problems, the technical solution provided by the present application is as follows:
the application provides a display panel, includes:
a substrate;
the thin film transistor layer is positioned on the substrate and comprises at least one thin film transistor;
the color film layer is positioned on the thin film transistor layer and at least comprises a first color resistor and a second color resistor;
a light shielding layer positioned on the thin film transistor layer;
the first color resistor is positioned on the thin film transistor layer, and the second color resistor is arranged adjacent to the first color resistor;
the orthographic projection of the thin film transistor on the shading layer is positioned in the shading layer.
In the display panel provided by the application, the light shielding layer at least comprises a first light shielding layer, and the material of the first light shielding layer is one of a light reflecting material or a black light absorbing material.
In the display panel provided by the present application, the light-shielding layer at least includes a first light-shielding layer and a second light-shielding layer;
the second shading layer is positioned on the first shading layer; alternatively, the first and second electrodes may be,
the first shading layer is positioned on the second shading layer.
In the display panel provided by the application, the first light shielding layer is a color resistance material, and the second light shielding layer is a color resistance material with a color different from that of the first light shielding layer; alternatively, the first and second electrodes may be,
the first light shielding layer is made of a color-resistant material, and the second light shielding layer is made of one of a light-reflecting material or a black light-absorbing material; alternatively, the first and second electrodes may be,
the first light shielding layer is made of one of a light reflecting material or a black light absorbing material, and the second light shielding layer is made of a color resistance material.
In the display panel provided by the application, when the first light shielding layer is made of a color resistance material, the first light shielding layer is continuous with the first color resistance; alternatively, the first and second electrodes may be,
when the second light shielding layer is made of color resistance materials, the second light shielding layer is continuous with the second color resistance; alternatively, the first and second electrodes may be,
when the first light shielding layer and the second light shielding layer are made of color resistance materials, the first light shielding layer is continuous with the first color resistance, and the second light shielding layer is continuous with the second color resistance.
In the display panel provided by the present application, the light-shielding layer further includes a third light-shielding layer located on the first light-shielding layer or the second light-shielding layer;
the third shading layer is a color resistance material with a color different from that of the first shading layer or the second shading layer; alternatively, the first and second electrodes may be,
the third shading layer is made of one of a light reflecting material or a black light absorbing material.
In the display panel provided by the application, the light shielding layer comprises a first part positioned right above the thin film transistor and a second part positioned at two sides of the thin film transistor;
the first portion is parallel to the substrate;
one side of the second part of the light shielding layer, which is far away from the first part, is close to the substrate.
In the display panel provided by the application, the ratio of the thicknesses of the first light shielding layer and the second light shielding layer in the first part is 0.8-1.2;
the ratio of the thicknesses of the first light-shielding layer and the second light-shielding layer in the second portion is 0.8 to 1.2.
In the display panel provided by the application, the first color resistor is one of a red color resistor, a green color resistor or a blue color resistor;
the second color resistor is one of a red color resistor, a green color resistor or a blue color resistor which is different from the first color resistor.
The application also provides a display device, which comprises the display panel, a touch layer and a cover plate layer, wherein the touch layer and the cover plate layer are positioned on the display panel.
Has the advantages that: according to the TFT device, the light shielding layer is formed on the TFT, and the light shielding layer covers the TFT, so that the problems of on-current and off-current changes of the TFT device caused by reflected light or stray light are effectively solved, and the display effect of the product is improved.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a first structural schematic diagram of a display panel according to the present application.
Fig. 2 is a second structural diagram of a display panel according to the present application.
Fig. 3 is a schematic view of a third structure of a display panel according to the present application.
Fig. 4 is a schematic diagram of a fourth structure of the display panel of the present application.
Fig. 5 is a schematic view of a fifth structure of a display panel according to the present application.
Fig. 6 is a schematic view of a sixth structure of a display panel according to the present application.
Fig. 7 is a schematic diagram of a seventh structure of a display panel according to the present application.
Fig. 8 is a schematic view of a first light-shielding layer structure of a display panel according to the present application.
Fig. 9 is a schematic view of a second light-shielding layer structure of the display panel of the present application.
Fig. 10 is a top view of a first light-shielding layer of a display panel according to the present application.
Fig. 11 is a top view of a second light-shielding layer of the display panel of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact of the first and second features, or may comprise contact of the first and second features not directly but through another feature in between. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
In the existing display panel, when stray light or reflected light generated by the back light reflected by the upper plate irradiates a TFT device, photocurrent is caused, and the on-current and off-current of the TFT are changed. Based on this, this application provides a display panel and display device.
Referring to fig. 1 to 7, the display panel 100 includes: the light-shielding layer comprises a substrate 101, a thin film transistor layer 102 located on the substrate 101, a color film layer 104 located on the thin film transistor layer 102, and a light-shielding layer 107 located on the thin film transistor layer 102.
The thin-film transistor layer 102 includes at least one thin-film transistor 103.
The color film 104 at least includes a first color resist 105 and a second color resist 106.
The first color resist 105 is located on the thin film transistor layer 102, and the second color resist 106 is arranged adjacent to the first color resist 105.
The orthographic projection of the thin film transistor 103 on the substrate 101 is within the orthographic projection of the light shielding layer 107 on the substrate 101.
In this embodiment, the substrate 101 may be one of a glass substrate, a quartz substrate, a resin substrate, and the like. The substrate 101 may also be a flexible substrate, and a material of the flexible substrate may include polyimide.
By forming the light-shielding layer 107 on the thin film transistor 103 and covering the light-shielding layer 107 on the thin film transistor 103, the problem of on-current and off-current changes of the TFT device caused by reflected light or stray light is effectively solved.
The technical solution of the present application will now be described with reference to specific embodiments.
Example one
Referring to fig. 1, the light-shielding layer 107 at least includes a first light-shielding layer 108.
In this embodiment, the first light-shielding layer 108 is made of one of a light-reflecting material and a black light-absorbing material.
In this embodiment, the reflective material may be one or a combination of silver, aluminum, chromium, molybdenum, tungsten, titanium, gold, and palladium.
In this embodiment, the black light absorbing material may be an organic polymer material doped with black dye or carbon black.
In this embodiment, the light-shielding layer 107 is formed on the thin film transistor 103, and the light-shielding layer 107 covers the thin film transistor 103, so that the problem of on-current and off-current variation of the TFT device caused by reflected light or stray light is effectively solved.
Example two
Referring to fig. 2 to 3 and fig. 10, the present embodiment is the same as or similar to the first embodiment, except that:
the light-shielding layer 107 includes at least a first light-shielding layer 108 and a second light-shielding layer 109.
Referring to fig. 2, the second light-shielding layer 109 may be disposed on the first light-shielding layer 108. Referring to fig. 3, the first light-shielding layer 108 may be disposed on the second light-shielding layer 109. The position between the first light-shielding layer 108 and the second light-shielding layer 109 is not particularly limited in the present application.
In this embodiment, the first light shielding layer 108 may be a color-resistant material, and the second light shielding layer 109 may be a color-resistant material having a different color from the first light shielding layer 108.
In this embodiment, the first light shielding layer 108 may be a color-resistant material, and the second light shielding layer 109 may be one of a light-reflecting material and a black light-absorbing material.
In this embodiment, the first light shielding layer 108 may be one of a light reflecting material and a black light absorbing material, and the second light shielding layer 109 may be a color-resist material.
In this embodiment, the color-resisting material may be one of a red color-resisting material, a green color-resisting material, or a blue color-resisting material.
In this embodiment, when the first light shielding layer 108 and/or the second light shielding layer 109 are made of a color resist material, the color may be different from the color of the first color resist 105 and/or the second color resist 106.
In this embodiment, when the first light-shielding layer 108 and the second light-shielding layer 109 are both made of color-resist materials, the wavelength range of light included in the superposition of the wavelength range of light absorbed by the red color resist and the wavelength range of light absorbed by the blue color resist is the largest, and the wavelength range of light included in the superposition of the wavelength range of light absorbed by the green color resist and the wavelength range of light absorbed by the blue color resist is the smallest, in consideration of the difference between the color-resist light-transmitting wavelength bands of different colors. Therefore, the light shielding efficiency of the two-layer color resistance stack is as follows from high to low: red and blue color resists, red and green color resists, and green and blue color resists.
In this embodiment, by providing the light-shielding layer 107 with a double-layer structure, the light-shielding layer 107 may be discontinuous from the first color resist 105 and/or the second color resist 106, so that a black light-absorbing material or a light-reflecting material may be selected, thereby increasing the variety of material choices of the light-shielding layer 107; and because the light-shielding layer 107 may be discontinuous with the first color resistance and/or the second color resistance 106, when the first light-shielding layer 108 and the second light-shielding layer 109 are both color resistance materials, an optimal color resistance combination, that is, a combination of a red color resistance and a blue color resistance, may be selected; the light shielding layer 107 with the double-layer structure plays a role in shielding the combination of the color-resisting material, the black light-absorbing material and the light-reflecting material, and effectively solves the problem of on-current and off-current changes of the TFT device caused by reflected light or stray light.
EXAMPLE III
Referring to fig. 4 to 6 and fig. 11, the present embodiment is the same as or similar to the first embodiment and the second embodiment, except that:
referring to fig. 4, when the first light shielding layer 108 is a color resist material, the first light shielding layer 108 is continuous with the first color resist 105.
Referring to fig. 5, when the second light-shielding layer 109 is a color resist material, the second light-shielding layer 109 is continuous with the second color resist 106.
Referring to fig. 6, when the first light-shielding layer 108 and the second light-shielding layer 109 are color resist materials, the first light-shielding layer 108 is continuous with the first color resist 105, and the second light-shielding layer 109 is continuous with the second color resist 106.
In this embodiment, when the first light shielding layer 108 is continuous with the first color resist 105, the first light shielding layer 108 and the first color resist 105 may be formed in the same process.
In this embodiment, when the second light shielding layer 109 is continuous with the second color resist 106, the second light shielding layer 109 and the second color resist 106 may be formed in the same process.
In this embodiment, by providing the light-shielding layer 107 having a double-layer structure, the first light-shielding layer 108 can be formed in the same process and material as the first color resist 105, and the second light-shielding layer 109 can be formed in the same process and material as the second color resist 106, thereby simplifying the process steps; the light shielding layer 107 with the double-layer structure plays a role in shielding the combination of a color-resisting material, a black light-absorbing material and a light-reflecting material, and effectively solves the problems of on-current and off-current change of the TFT device caused by reflected light or stray light.
Example four
Referring to fig. 7, the embodiment is the same as or similar to the embodiment, except that:
the light-shielding layer 107 further includes a third light-shielding layer 110 located on the first light-shielding layer 108 or the second light-shielding layer 109, where the third light-shielding layer 110 is a color-resistant material with a color different from that of the first light-shielding layer 108 or the second light-shielding layer 109, or the third light-shielding layer 110 is made of one of a light-reflecting material and a black light-absorbing material.
In this embodiment, whether the first light shielding layer 108 is continuous with the first color resist 105 and whether the second light shielding layer 109 is continuous with the second color resist 106 are not limited.
In this embodiment, when the first light shielding layer 108 is a color resist material, the first light shielding layer 108 and the first color resist 105 can be formed in the same process.
In this embodiment, when the second light shielding layer 109 is a color resist material, the second light shielding layer 109 and the first color resist 105 can be formed in the same process.
In this embodiment, by providing the light-shielding layer 107 with a three-layer structure, when the first light-shielding layer 108, the second light-shielding layer 109, and the third light-shielding layer 110 are all made of color-resistant materials, the three light-shielding layers adopt color-resistant materials with different colors, and the light-shielding layer 107 can absorb reflected light or stray light more completely; when the first light shielding layer 108 is made of color-resistant material, the first light shielding layer 108 can be formed by the same process and the same material as the first color resist 105, and when the second light shielding layer 109 is made of color-resistant material, the second light shielding layer 109 can be formed by the same process and the same material as the second color resist 106, so that the process steps are simplified; the light shielding layer 107 with the three-layer structure plays a role in shielding the combination of the color-resisting material, the black light-absorbing material and the light-reflecting material, and effectively solves the problems of on-current and off-current change of the TFT device caused by reflected light or stray light.
Referring to fig. 8, in the first to third embodiments, the first embodiment is taken as an example:
the light-shielding layer 107 includes a first portion 111 located right above the thin film transistor 103 and second portions 112 located at both sides of the thin film transistor 103. The first portion 111 is parallel to the substrate 101, and a side of the second portion 112 remote from the first portion 111 is disposed close to the substrate 101.
The light shielding layer 107 is provided with a first portion 111 located right above the thin film transistor 103 and second portions 112 located at two sides of the thin film transistor 103, so that the thin film transistor 103 is completely covered, stray light or reflected light from various directions can be effectively blocked, and the problems of on-current and off-current change of the TFT device caused by the reflected light or the stray light are effectively solved.
Referring to fig. 9, in the second embodiment and the third embodiment, the second embodiment is taken as an example:
when the first light-shielding layer 108 and the second light-shielding layer 109 are made of color-resist materials, in consideration of the difference in wavelength range of light absorbed by color resists of different colors, in order to avoid that the remaining light cannot be completely absorbed by the other light-shielding layer after the light passes through one light-shielding layer, the ratio of the thicknesses of the first light-shielding layer 108 and the second light-shielding layer 109 in the first portion 111 is 0.8 to 1.2.
In this embodiment, the ratio of the thicknesses of the first light-shielding layer 108 and the second light-shielding layer 109 in the first portion 111 is 1.
Similarly, the ratio of the thicknesses of the first light-shielding layer 108 and the second light-shielding layer 109 in the second portion 112 is 0.8 to 1.2.
In this embodiment, the ratio of the thicknesses of the first light-shielding layer 108 and the second light-shielding layer 109 in the second portion 112 is 1.
When the thickness ratio of the first light-shielding layer 108 to the second light-shielding layer 109 is 1, the light remaining after the light passes through one light-shielding layer can be completely absorbed by the other light-shielding layer, and in the case of the other thickness ratio, a small amount of light may pass through the light-shielding layers.
In the above embodiment, the first color resistor 105 is one of a red color resistor, a green color resistor, or a blue color resistor. The second color resistor 106 is one of a red color resistor, a green color resistor, or a blue color resistor different from the first color resistor 105. The present application is not particularly limited with respect to the specific colors of the first color resist and the second color resist.
The present application further provides a display device, which includes the display panel 100 in the above embodiment, and a touch layer and a cover plate layer located on the display panel 100. The display device can be any product or component with a display function, such as a mobile phone, a tablet personal computer, a television, a digital camera and the like. Meanwhile, the display device has the technical effects similar to those of the display panel 100 in the above embodiments, and the details are not repeated herein.
The application provides a display panel and a display device. The display panel comprises a substrate, a thin film transistor layer, a color film layer and a light shielding layer. The thin film transistor layer comprises at least one thin film transistor. The orthographic projection of the thin film transistor on the shading layer is positioned in the shading layer. According to the TFT device, the light shielding layer is formed on the TFT, and the light shielding layer covers the TFT, so that the problems of on-current and off-current changes of the TFT device caused by reflected light or stray light are effectively solved, and the display effect of the product is improved.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The display panel and the display device provided by the embodiments of the present application are described in detail above, and the principle and the implementation of the present application are explained in the present application by applying specific examples, and the description of the embodiments above is only used to help understanding the technical solution and the core idea of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.

Claims (10)

1. A display panel, comprising:
a substrate;
the thin film transistor layer is positioned on the substrate and comprises at least one thin film transistor;
the color film layer is positioned on the thin film transistor layer and at least comprises a first color resistor and a second color resistor;
a light shielding layer positioned on the thin film transistor layer;
the first color resistor is positioned on the thin film transistor layer, and the second color resistor is arranged adjacent to the first color resistor;
the orthographic projection of the thin film transistor on the shading layer is positioned in the shading layer.
2. The display panel according to claim 1,
the light shielding layer at least comprises a first light shielding layer, and the material of the first light shielding layer is one of a light reflecting material or a black light absorbing material.
3. The display panel according to claim 1,
the shading layer at least comprises a first shading layer and a second shading layer;
the second shading layer is positioned on the first shading layer; alternatively, the first and second electrodes may be,
the first shading layer is positioned on the second shading layer.
4. The display panel according to claim 3,
the first light shielding layer is made of color-resistant materials, and the second light shielding layer is made of color-resistant materials with different colors from the first light shielding layer; alternatively, the first and second electrodes may be,
the first light shielding layer is made of a color-resistant material, and the second light shielding layer is made of one of a light-reflecting material or a black light-absorbing material; alternatively, the first and second electrodes may be,
the first light shielding layer is made of one of a light reflecting material or a black light absorbing material, and the second light shielding layer is made of a color resistance material.
5. The display panel according to claim 4,
when the first shading layer is made of color resistance materials, the first shading layer is continuous with the first color resistance; alternatively, the first and second electrodes may be,
when the second light shielding layer is made of color resistance materials, the second light shielding layer is continuous with the second color resistance; alternatively, the first and second electrodes may be,
when the first light shielding layer and the second light shielding layer are made of color resistance materials, the first light shielding layer is continuous with the first color resistance, and the second light shielding layer is continuous with the second color resistance.
6. The display panel according to claim 4,
the light shielding layer further includes a third light shielding layer on the first light shielding layer or the second light shielding layer;
the third shading layer is a color resistance material with a color different from that of the first shading layer or the second shading layer; alternatively, the first and second electrodes may be,
the third shading layer is made of one of a light reflecting material or a black light absorbing material.
7. The display panel according to claim 4,
the shading layer comprises a first part positioned right above the thin film transistor and second parts positioned at two sides of the thin film transistor;
the first portion is parallel to the substrate;
one side of the second part of the light shielding layer, which is far away from the first part, is close to the substrate.
8. The display panel according to claim 7,
the ratio of the thicknesses of the first light-shielding layer and the second light-shielding layer in the first portion is 0.8 to 1.2;
the ratio of the thicknesses of the first light-shielding layer and the second light-shielding layer in the second portion is 0.8 to 1.2.
9. The display panel according to claim 1,
the first color resistor is one of a red color resistor, a green color resistor or a blue color resistor;
the second color resistor is one of a red color resistor, a green color resistor or a blue color resistor which is different from the first color resistor.
10. A display device comprising the display panel according to any one of claims 1 to 9, and a touch layer and a cover layer on the display panel.
CN202010032828.0A 2020-01-13 2020-01-13 Display panel and display device Pending CN111208687A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114326233A (en) * 2021-12-30 2022-04-12 惠科股份有限公司 Array substrate, display panel and display device

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002108248A (en) * 2000-07-26 2002-04-10 Seiko Epson Corp Electro-optical device, substrate therefor, and projection type display device
CN104377247A (en) * 2014-11-24 2015-02-25 深圳市华星光电技术有限公司 Thin film transistor, display device and manufacturing method of thin film transistor
CN105140294A (en) * 2015-08-11 2015-12-09 武汉华星光电技术有限公司 Low temperature poly silicon thin film transistor and fabrication method thereof
CN105676554A (en) * 2016-04-25 2016-06-15 武汉华星光电技术有限公司 Liquid crystal display panel and manufacturing method therefor
CN107086181A (en) * 2017-04-18 2017-08-22 京东方科技集团股份有限公司 Thin film transistor (TFT) and preparation method thereof, array base palte and display
CN107170829A (en) * 2017-05-15 2017-09-15 京东方科技集团股份有限公司 A kind of thin film transistor (TFT) and preparation method thereof, array base palte and display panel
CN107507867A (en) * 2017-08-24 2017-12-22 京东方科技集团股份有限公司 Top-gated self-aligned thin film transistor stepped construction and preparation method thereof
CN207489875U (en) * 2017-12-06 2018-06-12 京东方科技集团股份有限公司 A kind of array substrate, display panel and display device
CN109411484A (en) * 2018-10-23 2019-03-01 深圳市华星光电技术有限公司 A kind of preparation method of array substrate, display device and array substrate
CN109962084A (en) * 2017-12-14 2019-07-02 京东方科技集团股份有限公司 Organic light-emitting diode display substrate, display device and production method
CN110187547A (en) * 2019-05-30 2019-08-30 厦门天马微电子有限公司 A kind of display panel, display device and in-vehicle display system
CN110400811A (en) * 2019-08-30 2019-11-01 合肥鑫晟光电科技有限公司 Array substrate and display device

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002108248A (en) * 2000-07-26 2002-04-10 Seiko Epson Corp Electro-optical device, substrate therefor, and projection type display device
CN104377247A (en) * 2014-11-24 2015-02-25 深圳市华星光电技术有限公司 Thin film transistor, display device and manufacturing method of thin film transistor
CN105140294A (en) * 2015-08-11 2015-12-09 武汉华星光电技术有限公司 Low temperature poly silicon thin film transistor and fabrication method thereof
CN105676554A (en) * 2016-04-25 2016-06-15 武汉华星光电技术有限公司 Liquid crystal display panel and manufacturing method therefor
CN107086181A (en) * 2017-04-18 2017-08-22 京东方科技集团股份有限公司 Thin film transistor (TFT) and preparation method thereof, array base palte and display
CN107170829A (en) * 2017-05-15 2017-09-15 京东方科技集团股份有限公司 A kind of thin film transistor (TFT) and preparation method thereof, array base palte and display panel
CN107507867A (en) * 2017-08-24 2017-12-22 京东方科技集团股份有限公司 Top-gated self-aligned thin film transistor stepped construction and preparation method thereof
CN207489875U (en) * 2017-12-06 2018-06-12 京东方科技集团股份有限公司 A kind of array substrate, display panel and display device
CN109962084A (en) * 2017-12-14 2019-07-02 京东方科技集团股份有限公司 Organic light-emitting diode display substrate, display device and production method
CN109411484A (en) * 2018-10-23 2019-03-01 深圳市华星光电技术有限公司 A kind of preparation method of array substrate, display device and array substrate
CN110187547A (en) * 2019-05-30 2019-08-30 厦门天马微电子有限公司 A kind of display panel, display device and in-vehicle display system
CN110400811A (en) * 2019-08-30 2019-11-01 合肥鑫晟光电科技有限公司 Array substrate and display device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114326233A (en) * 2021-12-30 2022-04-12 惠科股份有限公司 Array substrate, display panel and display device

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