CN111206219A - Deposition chamber, coating equipment and coating method - Google Patents
Deposition chamber, coating equipment and coating method Download PDFInfo
- Publication number
- CN111206219A CN111206219A CN201811303034.2A CN201811303034A CN111206219A CN 111206219 A CN111206219 A CN 111206219A CN 201811303034 A CN201811303034 A CN 201811303034A CN 111206219 A CN111206219 A CN 111206219A
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- Prior art keywords
- evaporation source
- evaporation
- deposition chamber
- sources
- metal
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- 230000008021 deposition Effects 0.000 title claims abstract description 106
- 238000000576 coating method Methods 0.000 title claims abstract description 66
- 239000011248 coating agent Substances 0.000 title claims abstract description 51
- 238000000151 deposition Methods 0.000 claims abstract description 116
- 238000001883 metal evaporation Methods 0.000 claims abstract description 101
- 229910052755 nonmetal Inorganic materials 0.000 claims abstract description 31
- 238000001704 evaporation Methods 0.000 claims description 391
- 230000008020 evaporation Effects 0.000 claims description 390
- 239000010949 copper Substances 0.000 claims description 111
- 239000010409 thin film Substances 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 42
- 239000011521 glass Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 29
- 238000010438 heat treatment Methods 0.000 claims description 21
- 229910052783 alkali metal Inorganic materials 0.000 claims description 11
- 150000001340 alkali metals Chemical class 0.000 claims description 11
- 238000005137 deposition process Methods 0.000 claims description 9
- 238000002203 pretreatment Methods 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 7
- 150000001339 alkali metal compounds Chemical class 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 44
- 239000010408 film Substances 0.000 description 43
- 238000004544 sputter deposition Methods 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 12
- 238000002425 crystallisation Methods 0.000 description 8
- 230000008025 crystallization Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000012805 post-processing Methods 0.000 description 8
- 238000010248 power generation Methods 0.000 description 8
- 238000010549 co-Evaporation Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- -1 fluorine ions Chemical class 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000009834 vaporization Methods 0.000 description 4
- 230000008016 vaporization Effects 0.000 description 4
- 238000007599 discharging Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 229910001415 sodium ion Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000012163 sequencing technique Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811303034.2A CN111206219A (en) | 2018-11-02 | 2018-11-02 | Deposition chamber, coating equipment and coating method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811303034.2A CN111206219A (en) | 2018-11-02 | 2018-11-02 | Deposition chamber, coating equipment and coating method |
Publications (1)
Publication Number | Publication Date |
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CN111206219A true CN111206219A (en) | 2020-05-29 |
Family
ID=70780043
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811303034.2A Pending CN111206219A (en) | 2018-11-02 | 2018-11-02 | Deposition chamber, coating equipment and coating method |
Country Status (1)
Country | Link |
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CN (1) | CN111206219A (en) |
Citations (24)
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JPH05234890A (en) * | 1992-02-25 | 1993-09-10 | Fuji Electric Corp Res & Dev Ltd | Forming method for compound semiconductor thin film layer |
CN1950952A (en) * | 2004-03-05 | 2007-04-18 | 索里布罗股份公司 | Method and apparatus for in-line process control of the cigs process |
JP2007146219A (en) * | 2005-11-28 | 2007-06-14 | Hitachi Zosen Corp | Vacuum vapor deposition apparatus |
US20090215224A1 (en) * | 2008-02-21 | 2009-08-27 | Film Solar Tech Inc. | Coating methods and apparatus for making a cigs solar cell |
US20110030794A1 (en) * | 2009-08-10 | 2011-02-10 | Edward Teng | Apparatus And Method For Depositing A CIGS Layer |
JP2012007194A (en) * | 2010-06-22 | 2012-01-12 | Fujifilm Corp | Film formation apparatus and method for manufacturing photoelectric conversion element |
JP2012012662A (en) * | 2010-06-30 | 2012-01-19 | Fujifilm Corp | Film deposition apparatus and solar cell |
CN102492923A (en) * | 2011-12-23 | 2012-06-13 | 中国电子科技集团公司第十八研究所 | Method for roll-to-roll online controlled deposition of absorption layer on flexible substrate |
CN102496565A (en) * | 2011-12-23 | 2012-06-13 | 中国电子科技集团公司第十八研究所 | Device for roll-to-roll deposited absorption layer on flexible substrate |
JP2012184457A (en) * | 2011-03-03 | 2012-09-27 | Sumitomo Heavy Ind Ltd | Film forming device |
CN102763230A (en) * | 2010-02-22 | 2012-10-31 | 太阳能光电股份公司 | Method and device for producing a semiconductor layer |
US20130224901A1 (en) * | 2012-02-26 | 2013-08-29 | Jiaxiong Wang | Production Line to Fabricate CIGS Thin Film Solar Cells via Roll-to-Roll Processes |
CN103871851A (en) * | 2012-12-18 | 2014-06-18 | 北京汉能创昱科技有限公司 | Copper indium gallium diselenide thin film cell co-evaporation linear source array configuration |
CN103866236A (en) * | 2012-12-18 | 2014-06-18 | 北京汉能创昱科技有限公司 | Arrangement method of copper-indium-gallium-selenium thin-film battery co-evaporation linear sources |
CN103898450A (en) * | 2012-12-25 | 2014-07-02 | 北京汉能创昱科技有限公司 | Copper-indium-gallium-selenium co-evaporation linear source apparatus and use method thereof |
CN104716217A (en) * | 2014-09-30 | 2015-06-17 | 天津理工大学 | Sodium-doped copper indium gallium diselenide solar cell device and manufacturing method thereof |
CN105428457A (en) * | 2015-12-08 | 2016-03-23 | 中国电子科技集团公司第十八研究所 | Method of industrialized production of CIGS solar cell absorption layer by deposition and equipment thereof |
CN105720132A (en) * | 2014-12-03 | 2016-06-29 | 中国电子科技集团公司第十八研究所 | Alkali metal doping method for preparing CIGS absorbing layer on flexible substrate |
CN105734495A (en) * | 2014-12-26 | 2016-07-06 | 佳能特机株式会社 | Vacuum evaporation apparatus |
WO2016199728A1 (en) * | 2015-06-09 | 2016-12-15 | 株式会社アルバック | Winding-type film deposition device, evaporation source unit, and winding-type film deposition method |
CN207418851U (en) * | 2017-09-22 | 2018-05-29 | 云谷(固安)科技有限公司 | Evaporation source |
WO2018114376A1 (en) * | 2016-12-22 | 2018-06-28 | Flisom Ag | Linear evaporation source |
CN108269868A (en) * | 2018-01-29 | 2018-07-10 | 北京铂阳顶荣光伏科技有限公司 | Thin-film solar cells |
CN207596942U (en) * | 2017-11-08 | 2018-07-10 | 深圳市柔宇科技有限公司 | Evaporation coating device |
-
2018
- 2018-11-02 CN CN201811303034.2A patent/CN111206219A/en active Pending
Patent Citations (27)
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---|---|---|---|---|
JPH05234890A (en) * | 1992-02-25 | 1993-09-10 | Fuji Electric Corp Res & Dev Ltd | Forming method for compound semiconductor thin film layer |
CN1950952A (en) * | 2004-03-05 | 2007-04-18 | 索里布罗股份公司 | Method and apparatus for in-line process control of the cigs process |
US20080254202A1 (en) * | 2004-03-05 | 2008-10-16 | Solibro Ab | Method and Apparatus for In-Line Process Control of the Cigs Process |
CN101599515A (en) * | 2004-03-05 | 2009-12-09 | 索里布罗研究公司 | CIGS technology is carried out the method and apparatus of in-line arrangement process control |
JP2007146219A (en) * | 2005-11-28 | 2007-06-14 | Hitachi Zosen Corp | Vacuum vapor deposition apparatus |
US20090215224A1 (en) * | 2008-02-21 | 2009-08-27 | Film Solar Tech Inc. | Coating methods and apparatus for making a cigs solar cell |
US20110030794A1 (en) * | 2009-08-10 | 2011-02-10 | Edward Teng | Apparatus And Method For Depositing A CIGS Layer |
CN102763230A (en) * | 2010-02-22 | 2012-10-31 | 太阳能光电股份公司 | Method and device for producing a semiconductor layer |
US20130045563A1 (en) * | 2010-02-22 | 2013-02-21 | Solarion AG Photovotaik | Method and device for producing a semiconductor layer |
JP2012007194A (en) * | 2010-06-22 | 2012-01-12 | Fujifilm Corp | Film formation apparatus and method for manufacturing photoelectric conversion element |
JP2012012662A (en) * | 2010-06-30 | 2012-01-19 | Fujifilm Corp | Film deposition apparatus and solar cell |
JP2012184457A (en) * | 2011-03-03 | 2012-09-27 | Sumitomo Heavy Ind Ltd | Film forming device |
CN102492923A (en) * | 2011-12-23 | 2012-06-13 | 中国电子科技集团公司第十八研究所 | Method for roll-to-roll online controlled deposition of absorption layer on flexible substrate |
CN102496565A (en) * | 2011-12-23 | 2012-06-13 | 中国电子科技集团公司第十八研究所 | Device for roll-to-roll deposited absorption layer on flexible substrate |
US20130224901A1 (en) * | 2012-02-26 | 2013-08-29 | Jiaxiong Wang | Production Line to Fabricate CIGS Thin Film Solar Cells via Roll-to-Roll Processes |
CN103866236A (en) * | 2012-12-18 | 2014-06-18 | 北京汉能创昱科技有限公司 | Arrangement method of copper-indium-gallium-selenium thin-film battery co-evaporation linear sources |
CN103871851A (en) * | 2012-12-18 | 2014-06-18 | 北京汉能创昱科技有限公司 | Copper indium gallium diselenide thin film cell co-evaporation linear source array configuration |
CN103898450A (en) * | 2012-12-25 | 2014-07-02 | 北京汉能创昱科技有限公司 | Copper-indium-gallium-selenium co-evaporation linear source apparatus and use method thereof |
CN104716217A (en) * | 2014-09-30 | 2015-06-17 | 天津理工大学 | Sodium-doped copper indium gallium diselenide solar cell device and manufacturing method thereof |
CN105720132A (en) * | 2014-12-03 | 2016-06-29 | 中国电子科技集团公司第十八研究所 | Alkali metal doping method for preparing CIGS absorbing layer on flexible substrate |
CN105734495A (en) * | 2014-12-26 | 2016-07-06 | 佳能特机株式会社 | Vacuum evaporation apparatus |
WO2016199728A1 (en) * | 2015-06-09 | 2016-12-15 | 株式会社アルバック | Winding-type film deposition device, evaporation source unit, and winding-type film deposition method |
CN105428457A (en) * | 2015-12-08 | 2016-03-23 | 中国电子科技集团公司第十八研究所 | Method of industrialized production of CIGS solar cell absorption layer by deposition and equipment thereof |
WO2018114376A1 (en) * | 2016-12-22 | 2018-06-28 | Flisom Ag | Linear evaporation source |
CN207418851U (en) * | 2017-09-22 | 2018-05-29 | 云谷(固安)科技有限公司 | Evaporation source |
CN207596942U (en) * | 2017-11-08 | 2018-07-10 | 深圳市柔宇科技有限公司 | Evaporation coating device |
CN108269868A (en) * | 2018-01-29 | 2018-07-10 | 北京铂阳顶荣光伏科技有限公司 | Thin-film solar cells |
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PB01 | Publication | ||
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CB02 | Change of applicant information | ||
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Address after: 100076 6015, 6th floor, building 8, 9 Yingshun Road, Yinghai Town, Daxing District, Beijing Applicant after: Beijing Dingrong Photovoltaic Technology Co.,Ltd. Address before: 100176 room 3001, building 6, yard 7, Rongchang East Street, Beijing Economic and Technological Development Zone, Daxing District, Beijing, China Applicant before: BEIJING APOLLO DING RONG SOLAR TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20210413 Address after: 518054 Room 201, building A, 1 front Bay Road, Shenzhen Qianhai cooperation zone, Shenzhen, Guangdong Applicant after: Shenzhen Zhengyue development and Construction Co.,Ltd. Address before: 100076 6015, 6th floor, building 8, 9 Yingshun Road, Yinghai Town, Daxing District, Beijing Applicant before: Beijing Dingrong Photovoltaic Technology Co.,Ltd. |
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Application publication date: 20200529 |